CN110931610B - 一种正装集成单元二极管芯片 - Google Patents
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- CN110931610B CN110931610B CN201911252644.9A CN201911252644A CN110931610B CN 110931610 B CN110931610 B CN 110931610B CN 201911252644 A CN201911252644 A CN 201911252644A CN 110931610 B CN110931610 B CN 110931610B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
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CN201911252644.9A CN110931610B (zh) | 2019-05-08 | 2019-05-08 | 一种正装集成单元二极管芯片 |
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CN201910379235.9A CN111916539B (zh) | 2019-05-08 | 2019-05-08 | 一种正装集成单元二极管芯片 |
CN201911252644.9A CN110931610B (zh) | 2019-05-08 | 2019-05-08 | 一种正装集成单元二极管芯片 |
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CN110931610B true CN110931610B (zh) | 2022-09-20 |
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WO (1) | WO2020224643A1 (zh) |
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CN112885936B (zh) * | 2020-12-01 | 2022-04-22 | 北京工业大学 | 一种透明电极结构的Micro-LED阵列及制备方法 |
Citations (5)
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---|---|---|---|---|
JP2001060740A (ja) * | 1996-03-25 | 2001-03-06 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
CN101237013A (zh) * | 2007-02-01 | 2008-08-06 | 日亚化学工业株式会社 | 半导体发光元件 |
CN102097424A (zh) * | 2009-12-10 | 2011-06-15 | Lg伊诺特有限公司 | 发光器件 |
CN204516759U (zh) * | 2015-01-30 | 2015-07-29 | 大连德豪光电科技有限公司 | 倒装led芯片 |
CN208400869U (zh) * | 2015-05-13 | 2019-01-18 | 首尔伟傲世有限公司 | 发光元件 |
Family Cites Families (19)
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KR100631898B1 (ko) * | 2005-01-19 | 2006-10-11 | 삼성전기주식회사 | Esd보호 능력을 갖는 질화갈륨계 발광 소자 및 그 제조방법 |
CN101488547B (zh) * | 2008-12-30 | 2011-11-09 | 上海蓝光科技有限公司 | 一种发光二极管芯片结构及其制造方法 |
CN101661988A (zh) * | 2009-09-17 | 2010-03-03 | 上海蓝光科技有限公司 | 发光二极管芯片及其制造方法 |
KR101665932B1 (ko) * | 2010-02-27 | 2016-10-13 | 삼성전자주식회사 | 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 |
CN102544294A (zh) * | 2012-02-28 | 2012-07-04 | 江苏新广联科技股份有限公司 | 改善电流传输的led芯片 |
JP5694215B2 (ja) * | 2012-03-07 | 2015-04-01 | 株式会社東芝 | 半導体発光素子 |
US10957816B2 (en) * | 2013-02-05 | 2021-03-23 | International Business Machines Corporation | Thin film wafer transfer and structure for electronic devices |
DE102014011893B4 (de) * | 2013-08-16 | 2020-10-01 | Seoul Viosys Co., Ltd. | Leuchtdiode |
CN103413875B (zh) * | 2013-09-09 | 2016-05-11 | 聚灿光电科技股份有限公司 | 一种led芯片的pn台阶、led芯片以及led芯片的pn台阶的制作方法 |
CN103855149A (zh) * | 2014-02-20 | 2014-06-11 | 中国科学院半导体研究所 | 倒装高压发光二极管及其制作方法 |
US9433050B2 (en) * | 2014-10-08 | 2016-08-30 | Mikro Mesa Technology Co., Ltd. | Micro-light-emitting diode |
CN107924968B (zh) * | 2015-08-18 | 2022-08-23 | 苏州立琻半导体有限公司 | 发光元件、包括发光元件的发光元件封装和包括发光元件封装的发光装置 |
CN106711301B (zh) * | 2015-11-12 | 2020-10-27 | 美科米尚技术有限公司 | 发光二极管与其制作方法 |
CN205194731U (zh) * | 2015-11-18 | 2016-04-27 | 上海博恩世通光电股份有限公司 | 一种倒装发光二极管芯片 |
KR102624111B1 (ko) * | 2016-01-13 | 2024-01-12 | 서울바이오시스 주식회사 | 자외선 발광소자 |
CN205488192U (zh) * | 2016-04-07 | 2016-08-17 | 深圳市天瑞和科技发展有限公司 | 氮化镓基倒装led芯片 |
CN107516701B (zh) * | 2017-07-14 | 2019-06-11 | 华灿光电(苏州)有限公司 | 一种高压发光二极管芯片及其制作方法 |
CN107689407B (zh) * | 2017-08-21 | 2019-09-06 | 厦门乾照光电股份有限公司 | 一种led芯片及其制作方法 |
CN108305924A (zh) * | 2017-12-28 | 2018-07-20 | 映瑞光电科技(上海)有限公司 | 一种垂直结构的发光二极管及其制备方法 |
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2019
- 2019-05-08 CN CN201910379235.9A patent/CN111916539B/zh active Active
- 2019-05-08 CN CN201911252644.9A patent/CN110931610B/zh active Active
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2020
- 2020-05-08 WO PCT/CN2020/089212 patent/WO2020224643A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001060740A (ja) * | 1996-03-25 | 2001-03-06 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
CN101237013A (zh) * | 2007-02-01 | 2008-08-06 | 日亚化学工业株式会社 | 半导体发光元件 |
CN102097424A (zh) * | 2009-12-10 | 2011-06-15 | Lg伊诺特有限公司 | 发光器件 |
CN204516759U (zh) * | 2015-01-30 | 2015-07-29 | 大连德豪光电科技有限公司 | 倒装led芯片 |
CN208400869U (zh) * | 2015-05-13 | 2019-01-18 | 首尔伟傲世有限公司 | 发光元件 |
Also Published As
Publication number | Publication date |
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CN111916539B (zh) | 2022-04-19 |
WO2020224643A1 (zh) | 2020-11-12 |
CN111916539A (zh) | 2020-11-10 |
CN110931610A (zh) | 2020-03-27 |
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