CN110931382B - Photoelectric performance detection method of LED crystal grains - Google Patents
Photoelectric performance detection method of LED crystal grains Download PDFInfo
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- CN110931382B CN110931382B CN201911265651.2A CN201911265651A CN110931382B CN 110931382 B CN110931382 B CN 110931382B CN 201911265651 A CN201911265651 A CN 201911265651A CN 110931382 B CN110931382 B CN 110931382B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The invention provides a method for detecting photoelectric performance of an LED crystal grain, which comprises the following steps: 1) correcting all the machines by using a unified standard sheet, designating at least one machine as a standard machine and setting an expansion ratio parameter, and remaining machines without setting the expansion ratio parameter; 2) under a non-expansion state, placing the wafer cut into the crystal grains on a working machine to obtain detection data, and calculating the position of an electrode on the crystal grains by using the position and the side length of the crystal grains during detection; 3) expanding the wafer, transferring the wafer to a standard machine, and performing sampling test again to obtain standard data; 4) and comparing the detection data with the standard data, correcting the data processed by the system according to the sampled value when the error is less than 3%, judging that the working machine for detecting the wafer is abnormal when the error is more than 3%, and simultaneously giving out a warning to an engineer. The invention cancels the steps of expanding and scanning the wafer during detection and realizes the consistency control of the product.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a method capable of improving the photoelectric property detection speed of an LED crystal grain.
Background
The LED crystal grains are subjected to photoelectric property detection and sorting processes before being manufactured into the light emitting diode. The photoelectric performance detection is mainly to detect the Voltage (VF), the Wavelength (WD), the brightness (LOP), the antistatic capability (ESD) and other related electric performances of all the LED crystal grains one by one through a photoelectric tester, further determine the actual parameter condition of each batch of products, and provide accurate information of the products for customers who purchase the crystal grains subsequently.
The current LED crystal grain detection mainly adopts the traditional method: firstly, cutting an LED wafer into grains, then expanding the distance between adjacent grains to 1.2 times of the original distance, wherein the condition is the most standard electrical parameter condition of the LED grains, the numerical value of each electrical parameter measured under the condition is closest to the actual condition, finally transferring the expanded wafer to a machine table for detection, and setting expansion ratio parameters on each machine table by matching with the expanded wafer before detection.
The expansion ratio refers to that when a same batch of products are detected, firstly, crystal grains in a first wafer are sampled and detected in a non-expansion state to obtain a first brightness average value, then, the wafer is expanded by 1.2 times, and an original sampling point is detected again to obtain a second brightness average value, wherein the ratio of the two brightness average values is the expansion ratio.
Because the expansion ratios corresponding to the wafers with different dimensions are different during detection, the expansion ratio parameters of all the machines need to be reset during processing different batches of products, and the machines are numerous, which not only causes time waste, but also is easy to cause the condition of expansion ratio input error.
In addition to the above human errors, because there are certain errors among different machines, although all machines are corrected by using a unified standard sheet before detection, the abnormality of the machines during operation cannot be completely avoided, and considering that there is no effective feedback means for the normal operation of the machines at present, even if some machines are abnormal, they are difficult to be found in time, which results in the mixing of inferior-quality products in the products purchased by customers and the subsequent goods return and even economic compensation problems.
The working principle of the photoelectric tester is that a probe is used for lighting and testing two positive electrodes and negative electrodes on crystal grains, so that the actual position of an electrode on each crystal grain must be determined in the detection process, and the positions of the crystal grains (except for an original point crystal grain) in a wafer are changed after expansion, so that the positions of the electrodes on the crystal grains are changed, the whole crystal grain array needs to be scanned one by one, a large amount of time is consumed, and the total moving distance of a detection mechanism is greatly increased due to the expansion of the wafer, for example, the total efficiency of photoelectric detection is seriously influenced by at least 10 minutes when each wafer product with the specification of 4 inches is scanned.
In summary, the existing LED die detection method has the problem of low efficiency, and it is difficult to ensure consistent control and timely feedback of the detection results of a plurality of machine products.
Disclosure of Invention
The invention aims to provide a method for detecting photoelectric properties of an LED crystal grain, which has high detection efficiency and good consistency of product detection results, and aims to solve the problems in the background art.
In order to achieve the above object, the present invention provides a method for detecting the photoelectric properties of an LED die, comprising the following steps:
1) correcting all the machines by using a unified standard sheet, and designating at least one of the machines as a standard machine and the rest as working machines, wherein all the standard machines set corresponding expansion ratio parameters according to the size specification of the product, and all the working machines do not set the expansion ratio parameters;
2) under the non-expansion state, the wafer cut into crystal grains is placed on a working machine for detection, and detection data are obtained;
3) expanding the wafer, transferring the wafer to a standard machine, and performing sampling test again to obtain standard data;
4) and comparing the detection data with the standard data, wherein the error is not more than 3% compared with the standard data, correcting the data according to the sampled value when the system processes the data, and judging that the working machine for detecting the wafer is abnormal if the error is more than 3%, and simultaneously giving a warning to an engineer. What is this correction process specific?
Preferably, when the grain is sampled in step 3), the number and position of the selected sampling points are the same as those of the sampling points used for determining the standard machine expansion ratio in step 1).
Preferably, when the grains are detected in step 2), the specific process is as follows: the wafer cut into crystal grains is placed on a machine table, side length parameters and parameter fluctuation ranges of single crystal grains are set in the machine table, the positions of electrodes on the crystal grains of the same batch of products are fixed, so that the position coordinates of the electrodes on all the crystal grains can be obtained through calculating the position coordinates of each crystal grain in the wafer in a non-expansion state and size data of the crystal grains, and a probe carries out lighting tests one by one according to the position coordinates of the electrodes to obtain detection data.
Preferably, when selecting the sampling point, the position of the original point die is determined first, then the die in the wafer is divided into n × n arrays, and finally, the original point die is used as the starting point, and one die is selected as the sampling point at the fixed position of each array.
Preferably, each wafer is provided with a special mark crystal grain with a fixed position, the special mark crystal grain has an appearance different from that of a target product crystal grain through a pre-process, and the origin crystal grain is arranged adjacent to the special mark crystal grain.
The technical scheme provided by the invention at least has the following beneficial effects:
1. the invention changes the 'expansion before detection' in the original step sequence into 'detection before expansion', directly places the wafer in a non-expansion state on a working machine for photoelectric performance test, because the position of the original point crystal grain on the wafer is known and the design size of the corresponding batch of crystal grain products is known, the machine control center can calculate the position of the electrode on each crystal grain according to the input parameters, the probe can directly move to the upper part of the electrode for detection, the wafer does not need to be scanned one by one, the moving distance of the probe is greatly shortened compared with that after expansion, and the production efficiency is improved.
2. According to the invention, the product is expanded after the detection is finished, so that the requirement of subsequent sorting operation is met, and the expanded product is transferred to a standard machine for sampling detection, so that an engineer can correct the detection data based on standard data, and the electrical parameter data obtained during direct detection is basically the same as the expanded electrical parameter data.
3. According to the invention, a plurality of machines are selected as standard machines, so that the abnormal working conditions of the machines can be fed back in time, the problem that the consistency of products is poor due to the continuous production of abnormal machines and the customer complaints and economic losses are caused is avoided, the number of the standard machines is small, and the workload of monitoring and calibrating every day by engineers is small.
4. In the process of determining the standard machine expansion ratio and sampling, the number and the positions of the selected sampling points are the same, so that the confidence coefficient is high when the detection data is corrected in the follow-up process.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, it is obvious that the drawings described below are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts, wherein:
FIG. 1 is a schematic diagram of a die of the present invention in a non-expanded state;
FIG. 2 is a schematic view of the die of the present invention in a 1.2-fold expanded state;
in the figure: 1 crystal grain, 2 positive electrode, 3 negative electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
referring to fig. 1-2, a wafer is cut into 4-inch crystal grains, each crystal grain 1 is provided with a positive electrode 2 and a negative electrode 3, and all the crystal grains are subjected to photoelectric property detection, which comprises the following specific steps:
1) correcting all the machines by using a unified standard sheet, and designating at least one of the machines as a standard machine and the rest as working machines, wherein all the standard machines set corresponding expansion ratio parameters according to the size specification of the product, and all the working machines do not set the expansion ratio parameters;
2) under the non-expansion state, the wafer cut into crystal grains is placed on a working machine for detection, and detection data are obtained;
3) expanding the wafer, transferring the wafer to a standard machine, and performing sampling test again to obtain standard data;
4) and comparing the detection data with the standard data, wherein the error is not more than 3% compared with the standard data, correcting the data according to the sampled value when the system processes the data, and judging that the working machine for detecting the wafer is abnormal if the error is more than 3%, and simultaneously giving a warning to an engineer.
In this embodiment, the correction process in step 4) is as follows: setting the error of the standard data to be a normal value which is not more than 1%, and when the error is more than 2% and less than 3%, automatically modifying the detection data to be within 2% by the system so as to reach the standard of normal circulation.
In this embodiment, when the die is sampled in step 3), the number and the position of the selected sampling points are the same as those of the sampling points determined in step 1).
In the embodiment, each wafer is provided with a special mark crystal grain with a fixed position, and the special mark crystal grain has an appearance different from that of a target product crystal grain through a pre-process. Selecting a crystal grain arranged adjacent to the special mark crystal grain as an original point, dividing the crystal grains in the wafer into 5 x 5 arrays, and selecting a crystal grain as a sampling point at the fixed position of each array by taking the crystal grain of the original point as a starting point when the crystal grains are sampled.
In the step 2), the wafer cut into the crystal grains is placed on a machine, the side length parameter and the parameter fluctuation range of a single crystal grain are set in the machine, the position coordinates of the special marked crystal grains are set, the machine control center can automatically calculate the position coordinates of each crystal grain in the wafer in a non-expansion state, and the position coordinates of the electrode on each crystal grain can be calculated according to the side length data of the crystal grains due to the fixed position of the electrode on the crystal grains of the same batch of products.
The method is simple to operate, and during operation, the electrode position of each grain is calculated according to the side length, and then the position of the specially marked grain is confirmed, so that the test can be directly started. Therefore, the scanning time of each wafer is reduced by about 10 minutes, the moving waste of extra distance between each crystal grain is avoided, and the yield is improved by more than 8 percent on the basis of the current capacity; the consistency of the batch of crystal grain products is well controlled, and the condition that abnormal products are mixed is not generated.
The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and various modifications and changes may be made by those skilled in the art. Any improvement or equivalent replacement directly or indirectly applied to other related technical fields within the spirit and principle of the invention and the contents of the specification and the drawings of the invention shall be included in the protection scope of the invention.
Claims (4)
1. A method for detecting photoelectric properties of an LED crystal grain is characterized by comprising the following steps:
1) correcting all the machines by using a unified standard sheet, and designating at least one of the machines as a standard machine and the rest as working machines, wherein all the standard machines set corresponding expansion ratio parameters according to the size specification of the product, and all the working machines do not set the expansion ratio parameters;
2) under the non-expansion state, the wafer cut into crystal grains is placed on a working machine for detection, and detection data are obtained;
3) expanding the wafer, transferring the wafer to a standard machine, performing sampling test again to obtain standard data, wherein the number and the position of sampling points selected during sampling test are the same as those of the sampling points determined during standard machine expansion ratio in the step 1);
4) and comparing the detection data with the standard data, wherein the error is not more than 3% compared with the standard data, correcting the data according to the extracted value when the system processes the data, and judging that the working machine for detecting the wafer is abnormal if the error is more than 3%, and simultaneously giving an alarm to an engineer.
2. The method for detecting the photoelectric property of the LED crystal grain according to claim 1, wherein the specific process is as follows when the crystal grain is detected in the step 2): the wafer cut into crystal grains is placed on a machine table, side length parameters and parameter fluctuation ranges of single crystal grains are set in the machine table, position coordinates of electrodes on all the crystal grains are obtained through calculation of position coordinates of the crystal grains in the wafer in a known non-expansion state and size data of the crystal grains, and a probe carries out lighting test one by one according to the position coordinates of the electrodes to obtain detection data.
3. The method of claim 2, wherein when selecting the sampling points, the position of the original point die is determined, then the dies in the wafer are divided into n x n arrays, and finally one die is selected as a sampling point at the fixed position of each array with the original point die as the starting point.
4. The method for detecting the photoelectric property of the LED crystal grain according to claim 3, wherein a special mark crystal grain with a fixed position is arranged on each wafer, the special mark crystal grain has an appearance different from that of a target product crystal grain through a pre-process, and the origin crystal grain is arranged adjacent to the special mark crystal grain.
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