CN110927638B - 集成磁聚集器和连接 - Google Patents
集成磁聚集器和连接 Download PDFInfo
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- CN110927638B CN110927638B CN201910886785.XA CN201910886785A CN110927638B CN 110927638 B CN110927638 B CN 110927638B CN 201910886785 A CN201910886785 A CN 201910886785A CN 110927638 B CN110927638 B CN 110927638B
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Abstract
本发明涉及集成磁聚集器和连接。半导体器件(200)包括电子电路、互连接触件(205)(诸如焊球)、以及被配置成用于将磁通量聚集到预定区域的板。板(204)是导电的,并且它电连接到电子电路。
Description
发明领域
本发明涉及集成电路的领域。更具体地,它涉及具有磁感测能力的集成电路。
发明背景
电子电路趋向于越来越高水平的集成度和紧凑性。不仅诸如晶体管、电容器等之类有源元件的数量增加,而且这些电路的功能也在数量和多样化方面增加。因此,集成电路可以执行的功能的数量有增加的趋势。例如,感测能力可以应用于集成电路,在许多情况下,感测能力与其他功能(诸如校准和补偿、数据处理、信号路由等)组合。
在一些集成电路(IC)应用中,期望包括磁感测功能,而不是将IC连接到外部磁传感器。这些IC通常包括嵌入其中的磁聚集器(MC)和感测元件。MC是诸如盘、板或一般的平面结构之类的结构,由于MC的材料和形状,MC可以重定向周围的磁通量。取决于MC的形状并根据磁场的方向和强度,能以此种方式将通量重定向成朝向可以在其中放置一个或多个敏感元件并且给出与穿过一个或多个敏感元件的磁场通量的量相关的可测量响应的预定区域。
然而,MC需要IC中的实质区域,以便提供可以被测量的有意义的通量聚集。这是有问题的,因为IC需要紧凑,并且使用IC的特定区域来进行磁聚集导致IC的面积或厚度增加。
MC通常位于器件上,与有源元件中的一些重叠但与它们隔离,以减少对这些元件的EM干扰。然而,这降低了设计的灵活性,因为MC限于器件表面上的可用区域,该可用区域通常包括其他功能和有源元件。
发明内容
本发明的实施例的目的是提供一种包括磁聚集系统的紧凑半导体器件。进一步的目的是提供一种具有集成磁场测量的紧凑器件。
本发明的实施例的优点在于,磁聚集器在电路中不需要与由器件的电信号端口所占用的区域不同的单独区域。
在第一方面中,本发明提供了一种半导体器件,该半导体器件包括电子电路、互连接触件和板,该板被配置成用于将磁通量聚集到预定区域,该板是导电的,其中该板电连接到电子电路。
本发明的实施例的优点在于改善了器件的集成度,从而获得了高度紧凑的器件,其中板可以同时充当磁聚集器和用于电信号的端口。
在本发明的一些实施例中,本发明不限于此,该板可包含镍和铁。例如,铁的量可以在15%和30%之间,其余的是镍,但是它可以包括其他材料(诸如例如杂质)。
本发明的各实施例的一个优点在于,可以获得磁聚集器的良好磁特性。
而且,磁特性可以与UBM的良好机械特性组合,以改善互连接触件(例如焊球)的粘附性。
在本发明的一些实施例中,该器件进一步包括再分布层,该再分布层用于使电子电路的端口在若干位置可用。板电连接到该再分布层。
本发明实施例的优点在于,用于提供磁聚集器的籽晶层可以重新用作再分布层。
在本发明的一些实施例中,该器件包括保护层,该保护层用于保护电子电路并用于机械地支撑再分布层的至少部分。
在本发明的一些实施例中,板适于用作电子电路和互连接触件之间的扩散阻障件。
本发明的实施例的优点在于,可以保护器件(例如,器件中的电子电路)免于从外部和/或互连接触件扩散和氧化。本发明的一些实施例的优点在于,该板可以充当磁聚集器并同时呈现有利的机械功能,诸如扩散阻障、氧化阻障,例如充当用于焊球下落(solderball drop)的凸块下金属化(UBM)层。实施例的优点在于可以改善器件的弹性和耐化学性。
在本发明的一些实施例中,该器件进一步包括互连接触件,其中该板在互连接触件和电子电路之间提供电路径。
本发明的实施例的优点在于,可将磁聚集功能与电功能和粘合功能组合在同一板中,通常在提供与外部板、芯片或器件的连接和粘附的同时提供磁聚集。例如,互连接触件可以是焊球。本发明的实施例的优点在于,可以使用诸如倒装芯片技术之类的公知制造技术。
在本发明的一些实施例中,板包括从互连接触件达到不超过板的厚度的三分之一的材料。
本发明的实施例的优点在于,例如尽管磁聚集器中存在来自焊球回流的金属间材料,但可以获得针对磁通量聚集的良好磁特性以及聚集器和互连接触件之间的良好电路径。
在本发明的一些实施例中,该器件进一步包括至少一个磁场感测元件,该至少一个磁场感测元件被配置成用于感测由板聚集的磁通量。本发明的实施例的优点在于,可以在非常紧凑的集成电路或封装电路中提供磁传感器。
在第二方面中,本发明提供一种在半导体器件上提供磁系统的方法,该方法包括:
-在衬底上提供具有电子电路的半导体器件,
-在衬底上提供板,其中,提供板包括将该板配置成用于聚集磁通量,
其中,提供板进一步包括将板与电子电路电连接。
本发明的实施例的优点在于改善了器件的集成度,从而获得了高度紧凑的器件,其中板可以同时充当磁聚集器和用于电信号的端口。
在本发明的一些实施例中,该方法进一步包括在板的一部分上提供至少一个互连接触件。本发明的实施例的优点在于,可以提供用于允许传导路径的所需区域,同时减少由于板和互连接触件之间的附接而引起的板的磁特性的干扰。例如,可以通过提供掩蔽层来提供互连接触件。
在本发明的实施例中,该方法进一步包括提供互连接触件,并且例如通过使互连接触件紧靠板而将互连接触件电连接到板。
本发明的实施例的优点在于,可以在电子电路和外部器件、板、芯片、管芯等之间建立电路径。进一步的优点在于,通过紧靠接触件可以提供高度紧凑的封装。
在本发明的实施例中,该方法进一步包括在衬底上提供籽晶层,随后在籽晶层上提供板,其中籽晶层是导电的,以用于将板电连接到电子电路。本发明的实施例的优点在于,用于提供板的籽晶层的至少部分可用作再分布层。
在本发明的实施例中,该方法进一步包括在提供籽晶层之前和/或在提供板之前,至少部分地在衬底上提供掩蔽层。
本发明的实施例的优点在于,通过使用掩蔽可以容易地形成籽晶层和/或板层。一些实施例的优点在于,可以保护电子电路。
本发明的实施例的进一步的优点在于,当保护层设置在籽晶层的至少部分和衬底的至少部分之间时,保护层可用作籽晶层的支撑并保持作为再分布层的支撑。一些实施例的优点在于,用于为板提供形状的掩蔽层可以具有保护器件的功能。
在所附独立和从属权利要求中阐述了本发明的特定和优选方面。来自从属权利要求的特征可以与独立权利要求的特征以及其他从属权利要求的特征适当地组合,而不仅仅是如在权利要求中明确阐述的。
本发明的这些和其他方面从下文描述的(多个)实施例将变得显而易见,并且将参考下文描述的(多个)实施例来进行阐明。
附图说明
图1图示出根据本发明的实施例的器件的截面图。
图2图示出根据本发明的替代实施例的包括再分布层的器件的截面图。
图3示出了根据本发明实施例的方法的处理流程,包括可选步骤。
图4图示出根据本发明的替代实施例的包括再分布的器件的分解图。
图5示出图4的器件的俯视图。
这些附图仅是示意性而非限制性的。在附图中,出于说明性目的,可将要素中的一些要素的尺寸放大且不按比例绘制。
权利要求中的任何附图标记不应被解释为限制范围。
在不同的附图中,相同的附图标记指示相同或相似的要素。
具体实施方式
将就特定实施例并且参考某些附图来描述本发明,但是本发明不限于此,而仅由权利要求书来限定。尺寸和相对尺寸不对应于对本发明的实施的实际减少量。
说明书和权利要求书中的术语第一、第二等被用于区分相似要素,而不一定用于描述时间上、空间上、等级上或其他方式上的顺序。应当理解,如此使用的术语在适当的情况下是可互换的,并且本文中所描述的本发明实施例能够以除了本文中所描述或图示的顺序之外的其他顺序操作。
另外,说明书和权利要求书中的术语顶部、下方等等被用于描述性目的而不一定用于描述相对位置。应当理解,如此使用的术语在合适情况下是互换的,并且本文中所描述的本发明的实施例能够以除了本文描述或图示的取向的之外的其他取向来操作。
应当注意,权利要求中使用的术语“包括”不应被解释为限定于其后列出的装置;它并不排除其他要素或步骤。因此,该术语应被解释为指定如所提到的所陈述的特征、整数、步骤或组件的存在,但不排除一个或多个其他特征、整数、步骤或组件、或其群组的存在或添加。因此,表述“一种包括装置A和B的设备”的范围不应当被限定于仅由组件A和B构成的设备。这意味着对于本发明,该设备的仅有的相关组件是A和B。
贯穿本说明书对“一个实施例”或“实施例”的引用意指结合该实施例描述的特定的特征、结构或特性被包括在本发明的至少一个实施例中。因此,短语“在一个实施例中”或“在实施例中”贯穿本说明书在各个地方的出现并不一定全部指代同一实施例,而是可以指代同一实施例。此外,在一个或多个实施例中,如从本公开中对本领域普通技术人员将是显而易见的,特定的特征、结构或特性可以用任何合适的方式进行组合。
类似地,应当领会,在本发明的示例性实施例的描述中,出于精简本公开和辅助对各个发明性方面中的一个或多个方面的理解的目的,本发明的各个特征有时被一起编组在单个实施例、附图或其描述中。然而,这种公开的方法不应被解释为反映所要求保护的本发明需要比每项权利要求中所明确记载的更多特征的意图。相反,如所附权利要求反映的,各发明方面可以存在比单个前述公开的实施例的全部特征更少的特征。因此,具体实施方式之后所附的权利要求由此被明确纳入本具体实施方式中,其中每一项权利要求本身代表本发明的单独实施例。
此外,尽管本文中所描述的一些实施例包括其他实施例中所包括的一些特征但不包括其他实施例中所包括的其他特征,但是不同实施例的特征的组合旨在落在本发明的范围内,并且形成如将由本领域技术人员所理解的不同实施例。例如,在所附的权利要求书中,所要求保护的实施例中的任何实施例均能以任何组合来使用。
在本文中所提供的描述中,阐述了众多具体细节。然而应当理解,在没有这些具体细节的情况下也可实施本发明的实施例。在其他实例中,公知的方法、结构和技术未被详细示出,以免混淆对本描述的理解。
在本发明的实施例中提及“互连接触件”或简单地提及“接触件”的情况下,提及的是集成电路技术中用来通过输入/输出(I/O)端口(包括焊盘,等等)在芯片与衬底或另一芯片之间交换电信号的连接类型。术语“互连接触件”包括焊料凸块接合中使用的焊球、引线接合中的接合物、螺柱、柱等。例如,倒装芯片技术中使用的电连接被包括作为互连接触件。
本发明涉及具有磁感测能力的集成电路,包括半导体器件,该器件的衬底的顶部上具有一个或多个磁聚集器(MC)。在它们通常具有平面尺寸(例如,平行于衬底表面,比其厚度大得多)的意义上,MC可以被认为是板。
为了节省电路区域中的空间,本发明包括使MC的至少部分区域可用于提供到电路的I/O端口的电路径的想法。
更详细地,在本发明的实施例中,器件的I/O端口(例如,半导体衬底中的电路的焊盘)可以与导电板电接触,该导电板用于提供到芯片的连接。传导路径或电路径由互连接触件和器件的导电轨之间的板经由器件的电路的端口(诸如焊盘或再分布层和焊盘)提供。该板可以充当电路互连接触件的粘附层,和/或充当用于保护器件的导电轨免受诸如扩散和电迁移之类的现象的扩散阻障层和/或氧化阻障件,和/或充当用于改善与互连接触件的粘附性的润湿层。特别地,该板可以充当凸块下金属(UBM)层,该凸块下金属(UBM)层呈现所有这些有利特性。例如,UBM层可用作焊球下落。本发明包括使用与磁聚集器MC相同的板。因此,MC充当互连接触件的阻障层,例如,充当用于球体下落(ball drop)的UBM层。改善了IC的集成度和紧凑性。
在第一方面中,本发明涉及一种器件,更具体地涉及一种半导体器件,诸如芯片、管芯、衬底等中的集成电路。
该器件包括板,该板被配置成用于对磁通量进行重定向并朝向预定区域聚集磁通量。该板可以包括软磁材料,并且它可以被成形为将磁通量重定向到该器件的预定区域。本发明的板电连接到该器件。该板可以是导电的,并且它可以提供用于与该器件交换的电信号的路径。
在本发明的实施例中,该器件包括用于电信号的输入和输出的端口,并且该板可以在端口和外部接触件之间提供电路径,该外部接触件例如互连接触件(例如焊球),例如该板可以在器件与引线框架(例如,在封装芯片中)和/或任何其他器件、管芯或芯片之间提供电路径。在本发明的实施例中,该器件还包括此类互连接触件。
该板可以适于充当氧化阻障件,和/或(特别是在其中提供焊球的情况下)充当扩散阻障层,以用于减少或避免材料从焊球扩散到半导体器件的端口和/或导电轨中。例如,可以调整板的尺寸和成分以获得良好的扩散阻障特性。
在本发明的实施例中,该器件可以包括用于感测由MC聚集的磁场的感测元件。该器件可以包括可以利用磁测量(诸如磁传感器)的任何电路,例如包括电子罗盘的电路,其中可用区域是有限的(例如,电子罗盘可以包括在1mm2的数量级的管芯中)。
图1示出了根据本发明的简单实施例的半导体器件100的横向截面。器件100可以是半导体器件、晶片管芯,例如芯片,包括半导体衬底101(例如Si衬底、Si-Ge、SOI等)和电子电路102。衬底101的表面111包括焊盘的充当端口103的开口121,用于与器件100交换电信号(将信号引入在端口中和/或从端口输出信号),特别是与其电子电路102交换电信号。可以根据已知的制造技术获得衬底101、电路102和端口103(诸如焊盘)。
端口103与板104电接触。在图1中,板104用作阻障件,例如对抗端口103的氧化并对抗材料从互连接触件105到端口103的扩散的阻障件。在特定实施例中,板104可以是UBM层。在本发明的一些实施例中,板104附接到端口103,并且它还可以提供对充当互连接触件105的焊球或凸块的良好粘附。板104是导电的,以便允许通过充当端口103的焊盘在互连接触件105(例如,焊球)与电路102之间传送电信号。
此外,对板104进行进一步成形和调整,使得其允许重定向和聚集磁场,该磁场由具有箭头的虚线/点线磁场线ML表示,朝向适用于包括用于测量磁场通量的感测元件107的预定区域。半导体器件可以包括磁感测能力,例如,它适用于获得表示磁场的信号,诸如霍尔传感器。半导体器件可以附加地或替代地包括具有利用磁场聚集的功能(诸如,例如集成电感)的其他器件。板104具有阻障件的功能,并且还具有MC的功能。
在本发明的实施例中,板104包括有助于磁通量的重定向和聚集的材料。例如,可以使用软磁材料。该板可包括例如钴、镍、铁等,例如,钴-铁合金、或镍-铁合金,例如包含15%至30%的铁。例如,板可包括Ni80Fe20合金。特别地,Ni-Fe合金可以有利地用在硅衬底101上,因为它们的热膨胀系数相似,因此器件100在制造和使用期间经受较小的热应力。这些材料还与无铅焊接材料兼容,无铅焊接材料通常用作互连接触件105,但无铅焊接材料快速反应并溶解通常用作接触垫或UBM层的其他材料(诸如,铜)。
在本发明的实施例中,板104可以具有减小或避免磁饱和效应的厚度。虽然传统的UBM层具有2-5微米或高达7-10微米的厚度,但是板104可以具有10μm与150μm之间的厚度,例如20μm与100μm之间的厚度,例如30μm的厚度。
在本发明的实施例中,板104用作针对充当互连接触件105的焊球的球体下落。在一些实施例中,互连接触件105可以被包括在器件100中。接触件105可以例如包括Sn,例如,Sn基合金,并且它可以呈现良好的可焊性和机械特性,这可以通过添加其他金属来定制。例如,包括超过3%的Ag含量的Sn基焊料凸块在热疲劳测试中表现更好,并且更耐剪切塑性变形,而具有较低Ag含量(约1%)的合金表现出优越的延展性,并且因此在严苛的应变条件下具有更好的疲劳耐久性。此外,仅0.5%的Cu可降低衬底Cu的溶解行为,从而提高可焊性。例如,焊球可包括所谓的近共晶Sn-Ag-Cu合金或由所谓的近共晶Sn-Ag-Cu合金组成。
板104和互连接触件105可以显示出良好的粘附性以及良好的导电性。例如,可以提供球回流或类似处理以获得良好的粘附性。然而,虽然板104和接触件105之间的粘附性改善,但是该处理可能在板104和接触件105之间的边界中生成金属间材料层106。在特定示例中,板104可以包括Ni,并且球(充当接触件105)可包括先前呈现的材料,但不限于这些材料,因此球可包括Cu、Cu合金、Sn、Sn合金等。例如,在接触件105中包括Sn合金的情况下,在球回流期间可以形成NiSn金属间化合物层106。该层106通常呈现与板的其余部分不同的磁特性,并且可以(例如,在老化、焊料回流等期间)改变系统的行为。通常,层106的存在会劣化板的软磁特性。在优选的实施例中,由其侧面尺寸Ao表示的板/接触件重叠区域相对于由板区域的侧面尺寸Ap表示的板的总面积足够小,使得通过允许由板104的很大程度上未受干扰的区域执行磁聚集,通量聚集的任何恶化可以忽略不计。例如,板/接触件重叠面积可以小于板的面积的50%。然而,本发明不限于此,并且可以重叠超过50%的区域,例如整个区域。在此类情况下,板的厚度(例如30μm或更大)可以改善磁聚集。
替代地或附加地,不包括金属间化合物层106的板的厚度“Te”可足以提供良好的磁聚集和低饱和度。例如,该厚度Te可以是总板厚度Tp的2/3。例如,金属间化合物层106可占据最大1/3的板的厚度或板的厚度。
在本发明的实施例中,整个板104包括软磁材料。例如,板104可以是均匀的软磁合金板,例如,均匀的Ni-Fe合金板。这具有制造简单且非常小的外形的优点,从而改善了可集成性。
然而,本发明不限于此,并且板可包括具有不同成分的多个层。例如,板104可以具有其厚度的部分Te,该部分Te具有均匀的成分,而其总厚度Tp中的少量包括层106,例如先前讨论过的金属间化合物层106。在其他实施例中,板可包括与端口103(例如焊盘)物理接触(例如紧靠)的底层,包括允许到端口103的良好附接的材料。它还可以包括适于紧靠并附接到互连接触件105(例如焊球)的顶层。顶层和底层之间可以包括中间层。例如,这些层(例如中间层)中的一者可包括软磁材料。例如,在一些实施例中,板104的多个层可以具有使得可以提供良好的通量聚集和低饱和度的厚度。例如,顶层可以足够厚,因此使得间层106不会到达包括软磁材料的中间层。
在本发明的一些实施例中,通过使用磁聚集器作为UBM来解决无铅焊料消耗Cu的已知问题。板的材料,例如板104中的Ni和/或Co而不是Cu用作阻障件。这防止UBM快速溶解到无铅焊料中。它还防止例如存在于端口103中的铜的溶解。
在本发明的实施例中,板104可以充当集成磁聚集器(IMC),以用于将与芯片表面局部平行的外部磁场转换成基本上与该表面垂直的场。
图2示出了根据本发明的另一实施例的器件200的横截面。如之前所述,导电板204经由端口103(例如焊盘)电连接到形成器件200的一部分的电子电路(未图示出)。图1的板104可以类似于图2的板204。例如,它可以是NiFe板。然而,在后一种情况下,互连接触件205和电子电路(未图示出)之间的传导路径包括端口103和板204之间的再分布层RDL。可以经由板204、RDL和端口103在电子电路(未图示出)与充当互连接触件的焊料205之间建立传导路径203或电路径。
RDL的存在增加了设计灵活性,因为互连接触件205可以被提供在与将端口103包括在器件上所在的那些区域不同的区域上。这允许多个MC的更均匀分布,这改善了器件区域的利用率。这也允许增加每个板的总面积,从而潜在地改善对磁场的敏感性(允许更大量的通量被重定向和被聚集)。此外,RDL的存在增加了器件焊盘对氧化或扩散的屏蔽。在这种情况下,板204将紧靠RDL,并且能以与图1中类似的方式利用焊盘103为RDL提供氧化和扩散阻障件。
此外,在本发明的一些实施例中,RDL进一步适于在器件制造期间用作板204的籽晶层。换句话说,MC板204的籽晶层可以重新用作RDL,从而改善器件的紧凑性并减少制造步骤的数量。
在一些实施例中,RDL具有小于1000(例如小于100、例如小于10)的相对磁导率。例如,RDL可以包括铜、铝、铂、金属合金(诸如铁合金)等等。例如,充当籽晶层的RDL可包括TiW、或Cu、或其组合。
在本发明的实施例中,RDL可以充当磁聚集器,例如RDL和MC板可以具有相同的聚集磁场的功能。RDL的几何形状不仅适于分布信号的功能而且适于磁聚集。这些功能易于针对RDL的简单几何形状来进行组合。
在本发明的实施例中,籽晶层可以具有0.4μm的厚度。
在本发明的实施例中,可以包括至少一个至少部分地覆盖衬底101(例如,衬底的表面111的部分)的保护层201(例如多层(muti-layer))。保护层201可以是非金属层,例如介电层,例如包括氮化硅、或氧化硅、或碳化硅、或其组合的层,或多层结构。它可以是聚合物,例如环氧树脂、BCB、PBO。特别地,可以提供聚酰亚胺层作为保护层201。该层可以为器件提供机械和化学保护。
在本发明的一些实施例中,保护层201或其部分可以具有替代或附加用途。例如,它可以在器件制造期间在提供板204和/或RDL和/或互连接触件205的同时被用作掩蔽层。图2示出例如保护层201的一个部分211还可以用作RDL的至少部分的支撑,进一步将RDL的该部分与衬底101的表面111隔离。
在本发明的一些实施例中,器件100、器件200可以通过包括至少一个用于感测磁场的感测元件107而包括集成磁传感器。感测元件107可以例如包括霍尔板,例如水平霍尔板,但是本发明可以应用于其他传感器,例如,水平传感器。
板104、板204的形状确定磁通量聚集的方式,并且可以根据器件的特定应用进行调整,并且还可以根据器件中或器件上的一个或多个感测元件的放置来进行调整。例如,板104、板204可以是盘,如图4中所示的有角状盘、八角形板等。
本发明第一方面的实施例可以应用于专用集成电路(ASIC),诸如霍尔ASIC、CMOS霍尔ASIC等。可以使本发明的器件的这些实施例非常紧凑。
在进一步的方面中,本发明提供一种制造器件的方法,该器件包括在其中提供磁场重定向的电子电路。在图3的方案中概述的方法包括以下步骤:在衬底101上或在衬底101中提供301电子电路;提供302板104、板204并将板配置312成为MC,并进一步将板322电连接322到电子电路。通过在提供电连接的同时配置MC的形状,可以同时执行后两个步骤,从而节省制造路线中的步骤。
在本发明的实施例中,提供301电子电路的步骤可包括提供集成电路。
在一些实施例中,提供301电子电路的步骤可包括在衬底101上或衬底101中提供311磁感测元件107。例如,可提供具有感测元件(诸如霍尔板等)的电子电路。磁感测元件可以(但不必须)形成电子电路的部分,例如集成电路的部分。
在本发明的实施例中,该方法可以进一步包括在衬底101的表面111上提供305掩蔽层,以用于在后续步骤中提供其他的层。掩蔽层可以用于随后提供302板,或者替代地用于提供306籽晶层。在一些实施例中,掩蔽层或其部分可保留在器件的表面111上,作为保护层201(的部分)和/或作为钝化层或密封层来保护器件。
在本发明的实施例中,该方法可以包括提供306籽晶层。这可以例如使用在先前步骤中获得的掩蔽层,可选地接着进行蚀刻步骤来执行。在其他实施例中,在不预先提供掩蔽层的情况下,提供籽晶层可以包括在衬底的表面111上提供籽晶层,并且通过蚀刻316去除不需要的部分来使籽晶层成形。
在提供籽晶层之后,该方法可以包括随后提供302板,如前所述。这可以通过任何合适的技术完成,这些技术诸如例如溅射、蒸发、镀覆或电镀、印刷、气相沉积技术等;它可以包括提供例如金属之类的导电材料,诸如可以包括提供诸如Fe-Ni合金之类的软磁材料。在本发明第一方面的实施例中描述了板的厚度和其他细节。
在本发明的一些实施例中,提供302板可以包括在单个沉积步骤中提供302板。例如,可以在单个步骤中获得厚度为130μm或更低的板,例如厚度为30μm的板。有利地,这是提供板的非常快速且容易的方式。在一些实施例中,提供板可以可选地包括提供多层板,每层包括材料并配置成用于特定目的。例如,它可以包括提供用于改善的粘附性的第一层(例如在衬底表面上)、用于磁场聚集的第二层以及用于紧靠互连接触件的作为阻障件的第三层。
在一些实施例中,籽晶层可在提供302板期间被消耗或在提供302板之后被移除。在替代实施例中,籽晶层不需要完全被消耗或被移除,因此籽晶层的至少部分可以具有再分布层(RDL)的作用。例如,在本发明的实施例中,提供306籽晶层包括提供导电籽晶层,使其成形以提供电信号再分布,从而获得再分布层RDL。例如,Cu籽晶层可以用作RDL。如果传统的Cu层被用于焊料和球体下落,则应使用至少8μm的厚度,因为在回流之后约4μm的层被消耗并被溶解,形成CuSn金属间化合物。为RDL提供薄的籽晶层,这还允许制造用于接纳焊球的相对厚的MC,在器件的同一区域中提供磁聚集的同时允许信号再分布。
在本发明的一些实施例中,该方法进一步包括提供303互连接触件,并将互连接触件电连接到板。例如,在一些实施例中,可以通过使接触件紧靠313板来提供电连接。例如,互连接触件可以是焊球,并且板可以接纳焊球作为球体下落。在一些实施例中,通过应用热处理并确保互连接触件与板之间的粘附,可以包括对球进行回流304的步骤。在本发明的特定实施例中,该方法可以包括在提供303互连接触件之前为所述接触件提供308掩蔽层。例如,它可以使焊料205成形。然而,提供308此类接触件掩蔽层的步骤是可选的,并且接触件(例如球)可以在不进行掩蔽的情况下直接被设置在板上。
可以调整本发明的方法,并且可以添加其他步骤。例如,代替焊球,可以提供诸如引线接合之类的其他连接。
通过提供诸如氧化物(例如氧化硅)、氮化物(例如氮化硅)或聚合物层(例如聚酰亚胺层)之类的绝缘材料,可以提供305、307、308掩蔽层,如第一方面的实施例中所规定。由技术人员已知,取决于所使用的材料,这些可以通过任何合适的方法来提供,这些方法例如,沉积和图案化等
任何或所有掩蔽层可以充当牺牲层,并且可以在用作掩模之后被移除。例如,可以在回流304之前至少部分地移除接触件掩蔽层201。在优选实施例中,掩蔽层的至少一些可以被保留并且作为器件或其部分的保护层211。例如,可以提供接触件掩蔽层201以仅允许板204的一小部分紧靠互连接触件205。这确保了接触件与板之间的足够的电路径,同时板仍然提供抵抗导电材料从与该板接触(紧靠该板)的RDL或器件的I/O端口扩散和氧化的足够的阻障。总之,由掩蔽层提供的减小的接触面积可以改善UBM特性,同时还确保作为MC的板204的功能的低饱和效应和良好的磁特性。附加地或替代地,掩蔽层可以保留为钝化层。例如,该方法可以包括为RDL提供聚酰亚胺掩蔽层,提供RDL,并留下聚酰亚胺层中的至少部分作为器件的保护。该方法可以进一步包括为板并为接触件提供其他的聚酰亚胺层,这些聚酰亚胺层可以持续作为保护。掩蔽层还可以用作器件的部分的结构支撑,例如用于RDL的至少部分。
图4是根据本发明实施例的示例性器件400的不同叠加层级的分解图。它示出了层的每个要素相对于彼此的相对位置。
从底部到顶部,第一层级410示出了根据本发明实施例的器件中的霍尔板411的位置。提供301电子电路(或者更具体地,提供311磁感测元件)可以包括提供该第一层级410。
第二层级420示出了用于在其顶部提供板的籽晶层421。将为每对霍尔板411提供板,因此籽晶层421可包括如图中所示的彼此分开的多个区,针对每对霍尔板有一个区。籽晶层421保留在器件400中充当再分布层(RDL)。每个RDL的形状可以适于提供器件上的焊盘(未进行描画)与板之间的连接。因此,层级420可以包括保护层211,例如聚酰亚胺层,以用于使RDL成形,和/或用于保护器件,并且在一些实施例中,甚至用于支撑RDL并将其从器件的远离端口的表面分离。
完整的RDL可以用作籽晶层,或者在使用掩模时可选地仅用作籽晶层的部分,从而允许RDL设计的灵活性,例如,与用于形成用作MC的板的可选掩模组合。
第三层级430示出了充当IMC的板204,该板204在本发明中具有与用于接纳互连接触件的UBM层相同的功能。IMC/UBM板的形状适于提供所需的磁特性,诸如正交磁场分量的测量,所述场之间的交叉耦合、饱和效应、场朝向预定区域的重定向等。IMC的典型的厚度为30微米,而UBM的典型厚度为2-5微米。在本发明的实施例中,增加的板的厚度允许减小或避免磁饱和效应。
板104、板204的形状由磁性能驱动,以用于提供良好的MC(例如IMC),这可能与理想的UBM布局不同。为了改善UBM布局,因此改善了作为UBM的板的功能,可以将掩模441施加308到IMC,该IMC留下暴露板204的预定部分的开口,以提供良好的阻障特性来保护紧靠板的导电材料(因此改善了作为UBM的行为),如前所述。
第四层级440示出了在本发明的实施例中用来限制紧靠互连接触件的板的面积的此类掩模441。例如,它可以包括多个焊料掩模441和用于引线框架的掩模442。
下方垂直黑色线401在其方形点处示出RDL的区域422和与一个霍尔板412重合并叠加的板的区域431。上方垂直黑线402在其点处示出用于互连接触件的掩模441与板层430中的一个板432重合所在之处。
图5示出了图4的示例性器件400的俯视图,其中层级410、420、430、440在彼此的顶部上叠加。掩模441提供比板204的整个板区域小得多的接触面积,改善了阻障特性并允许良好的磁特性,例如,限制如参考图1所解释的金属间化合物层106的存在。
RDL的臂501示出了在器件400上对电信号的再分布的示例。例如,臂包括近极以及与近极相对的第二远极503,该近极包括板432重叠的区域502。远极503可以包括到器件的端口的连接(图4或图5中未进行描画,但在图2中描画为端口103)。因此,可以获得更高的设计灵活性。大面积的板204可以用于MC,这具有很大的自由度来定位板而不会干扰任何附近的连接。而且,MC的定位可以适于霍尔板的位置。此外,可以在板本身上提供传导路径,该板可以被重定向到设备上提供信号端口所在的任何位置。
总之,本发明通过组合作为MC和作为用于接纳外部接触件的金属化层(例如作为UBM层)的板,有利地节省了半导体器件上的面积。这也节省了器件制造过程中的步骤。
芯片尺寸可以按比例缩小,因为磁聚集器的位置与焊球的位置之间的冲突得以解决。
此外,籽晶层(诸如溅射籽晶层)可以被构造为既用作电镀基底又用作RDL,还节省空间和制造步骤,并且改善电路设计灵活性。
Claims (13)
1.一种半导体器件(100、200、400),包括:电子电路(102)、互连接触件(105、205)和板(104、204、432),所述板(104、204、432)被配置成用于将磁通量聚集到适于包括用于测量磁场通量的感测元件的预定区域,所述板(104、204、432)是导电的,
其中,所述板(104、204、432)电连接到所述电子电路(102),
其特征在于,所述板(104、204)在互连接触件(105、205)和电子电路(102)之间提供电路径。
2.如权利要求1所述的器件,其特征在于,所述板(104、204、432)包括镍和铁。
3.-如前述权利要求中任一项所述的器件,进一步包括再分布层(RDL),所述再分布层(RDL)用于使所述电子电路的端口在其他位置处能用,其中所述板(204、432)电连接到所述再分布层(RDL)。
4.如权利要求3所述的器件,进一步包括保护层(211),所述保护层(211)用于保护电子电路(102),并用于机械地支撑再分布层(RDL)的至少一部分。
5.-如权利要求1所述的器件,其特征在于,所述板(104、204)适于用作所述电子电路(102)与所述互连接触件(105)之间的扩散阻障件。
6.-如权利要求1所述的器件,其特征在于,所述互连接触件(105、205)是焊球。
7.-如权利要求1所述的器件,其特征在于,所述板(104)包括从所述互连接触件(105)达到不超过所述板(104)的厚度的三分之一的材料。
8.如权利要求1所述的器件,进一步包括至少一个磁场感测元件(107、411),所述至少一个磁场感测元件(107、411)被配置成用于感测由所述板(104、204、423)聚集的磁通量。
9.一种在半导体器件上提供磁系统的方法,所述方法包括:
-在衬底(101)上提供(301)具有电子电路(102)的半导体器件,
-在所述衬底上提供(302)板,其中,提供(302)所述板包括将所述板配置(312)成用于将磁通量聚集到适合于包括用于测量磁场通量的感测元件的预定区域,
其中,提供(302)所述板进一步包括将所述板与所述电子电路电连接(322),
进一步包括提供(303)互连接触件,并将所述互连接触件电连接到所述板。
10.如权利要求9所述的方法,进一步包括提供(308)掩蔽层,所述掩蔽层用于在所述板的一部分上提供至少一个互连接触件。
11.如权利要求9或10中任一项所述的方法,进一步包括使所述互连接触件紧靠(313)所述板。
12.如权利要求9所述的方法,进一步包括在所述衬底上提供(306)籽晶层,随后在所述籽晶层上提供(302)所述板,其中所述籽晶层是导电的,以用于将所述板电连接(322)至所述电子电路(102)。
13.如权利要求9所述的方法,进一步包括在提供(302)所述板之前,至少部分地在所述衬底(101)上方提供(305、307)掩蔽层。
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