CN110923622B - 沉积掩膜 - Google Patents

沉积掩膜 Download PDF

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Publication number
CN110923622B
CN110923622B CN201911112620.3A CN201911112620A CN110923622B CN 110923622 B CN110923622 B CN 110923622B CN 201911112620 A CN201911112620 A CN 201911112620A CN 110923622 B CN110923622 B CN 110923622B
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China
Prior art keywords
hole
deposition
holes
deposition mask
metal plate
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CN201911112620.3A
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English (en)
Chinese (zh)
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CN110923622A (zh
Inventor
卢健镐
曹守铉
黄周炫
金南昊
李相范
林正龙
韩太勋
文炳律
朴宰奭
孙晓源
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=57144656&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN110923622(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from KR1020150058346A external-priority patent/KR102528582B1/ko
Priority claimed from KR1020150062137A external-priority patent/KR102590892B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN110923622A publication Critical patent/CN110923622A/zh
Application granted granted Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN201911112620.3A 2015-04-24 2015-08-25 沉积掩膜 Active CN110923622B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2015-0058346 2015-04-24
KR1020150058346A KR102528582B1 (ko) 2015-04-24 2015-04-24 금속기판 및 이를 이용한 증착용마스크
KR1020150062137A KR102590892B1 (ko) 2015-04-30 2015-04-30 증착용마스크
KR10-2015-0062137 2015-04-30
CN201580080724.4A CN107709601B (zh) 2015-04-24 2015-08-25 金属基板和使用该金属基板的沉积掩膜

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580080724.4A Division CN107709601B (zh) 2015-04-24 2015-08-25 金属基板和使用该金属基板的沉积掩膜

Publications (2)

Publication Number Publication Date
CN110923622A CN110923622A (zh) 2020-03-27
CN110923622B true CN110923622B (zh) 2021-12-03

Family

ID=57144656

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201911112620.3A Active CN110923622B (zh) 2015-04-24 2015-08-25 沉积掩膜
CN201580080724.4A Active CN107709601B (zh) 2015-04-24 2015-08-25 金属基板和使用该金属基板的沉积掩膜
CN201911112607.8A Pending CN110760793A (zh) 2015-04-24 2015-08-25 沉积掩膜

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201580080724.4A Active CN107709601B (zh) 2015-04-24 2015-08-25 金属基板和使用该金属基板的沉积掩膜
CN201911112607.8A Pending CN110760793A (zh) 2015-04-24 2015-08-25 沉积掩膜

Country Status (4)

Country Link
EP (2) EP3993075A1 (https=)
JP (3) JP7075214B2 (https=)
CN (3) CN110923622B (https=)
WO (1) WO2016171337A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
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KR102330373B1 (ko) * 2017-03-14 2021-11-23 엘지이노텍 주식회사 금속판, 증착용 마스크 및 이의 제조방법
CN114752891B (zh) * 2017-09-07 2023-11-14 Lg伊诺特有限公司 沉积掩模
KR20190059742A (ko) * 2017-11-23 2019-05-31 엘지이노텍 주식회사 증착용 마스크 및 이의 제조 방법
WO2020013643A1 (ko) * 2018-07-12 2020-01-16 엘지이노텍 주식회사 Oled 화소 증착을 위한 금속판 재질의 증착용 마스크
KR102661470B1 (ko) * 2018-09-03 2024-04-29 삼성디스플레이 주식회사 증착 마스크 및 그 제조방법
KR102642138B1 (ko) * 2018-09-04 2024-03-04 엘지이노텍 주식회사 증착용 마스크 및 이의 제조 방법
KR102776431B1 (ko) * 2018-11-19 2025-03-07 엘지이노텍 주식회사 합금 금속판 및 이를 포함하는 증착용 마스크
US11991916B2 (en) 2018-11-19 2024-05-21 Lg Innotek Co., Ltd. Alloy metal plate and deposition mask including alloy metal plate
WO2020145718A1 (ko) * 2019-01-11 2020-07-16 엘지이노텍 주식회사 디스플레이용 기판
TWI838585B (zh) * 2019-10-04 2024-04-11 日商凸版印刷股份有限公司 蒸鍍遮罩、蒸鍍遮罩的製造方法及顯示裝置的製造方法
KR20220073143A (ko) * 2020-11-26 2022-06-03 엘지이노텍 주식회사 Oled 화소 증착을 위한 증착용 마스크
KR20240030154A (ko) * 2022-08-30 2024-03-07 엘지이노텍 주식회사 Oled 화소 증착을 위한 증착용 마스크
CN117364235B (zh) * 2023-12-07 2024-03-26 度亘核芯光电技术(苏州)有限公司 选区外延生长方法及其中使用的掩膜结构

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EP2159299A2 (en) * 2008-09-01 2010-03-03 Samsung Mobile Display Co., Ltd. Mask for thin film deposition and method of manufacturing OLED using the same
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CN203159696U (zh) * 2013-03-01 2013-08-28 昆山允升吉光电科技有限公司 一种具有辅助开口的掩模板
CN103388121A (zh) * 2012-05-08 2013-11-13 昆山允升吉光电科技有限公司 一种高精度金属掩模板的混合制作工艺
JP2014065256A (ja) * 2012-09-27 2014-04-17 Nec Corp スクリーンマスク及びスクリーンマスクの製造方法
WO2014109394A1 (ja) * 2013-01-10 2014-07-17 大日本印刷株式会社 金属板、金属板の製造方法、および金属板を用いて蒸着マスクを製造する方法
CN104164647A (zh) * 2013-05-17 2014-11-26 昆山允升吉光电科技有限公司 一种掩模板的制作工艺

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4444897A (en) * 1996-10-04 1998-05-05 Unisearch Limited Reactive ion etching of silica structures
JP2004319529A (ja) * 2002-10-29 2004-11-11 Kyocera Corp セラミック多層配線基板の製造方法
EP2159299A2 (en) * 2008-09-01 2010-03-03 Samsung Mobile Display Co., Ltd. Mask for thin film deposition and method of manufacturing OLED using the same
CN202688416U (zh) * 2012-01-16 2013-01-23 昆山允升吉光电科技有限公司 易于去除辅助图形的掩模板
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Also Published As

Publication number Publication date
EP3288097A1 (en) 2018-02-28
EP3993075A1 (en) 2022-05-04
JP2018513918A (ja) 2018-05-31
JP2025013942A (ja) 2025-01-28
EP3288097A4 (en) 2019-05-15
CN107709601B (zh) 2019-12-13
CN107709601A (zh) 2018-02-16
CN110923622A (zh) 2020-03-27
EP3288097B1 (en) 2024-10-23
WO2016171337A1 (ko) 2016-10-27
JP7075214B2 (ja) 2022-05-25
CN110760793A (zh) 2020-02-07
JP2022068330A (ja) 2022-05-09
JP7577701B2 (ja) 2024-11-05

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