CN110919193B - Nanosecond laser processing method for ceramic surface hole based on processing track optimization - Google Patents
Nanosecond laser processing method for ceramic surface hole based on processing track optimization Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 62
- 238000003672 processing method Methods 0.000 title claims abstract description 12
- 238000005457 optimization Methods 0.000 title claims abstract description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 46
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000012153 distilled water Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 17
- 238000003754 machining Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004814 ceramic processing Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- AZFKQCNGMSSWDS-UHFFFAOYSA-N MCPA-thioethyl Chemical compound CCSC(=O)COC1=CC=C(Cl)C=C1C AZFKQCNGMSSWDS-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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Abstract
The invention relates to a nanosecond laser processing method for ceramic surface holes based on processing track optimization, which comprises the following steps: s1: building a nanosecond laser processing system; s2: cutting and cleaning the aluminum nitride ceramic wafer; s3: setting adjustment parameters of a nanosecond laser processing system; s4: setting a processing mode and laser track parameters of primary processing; s5: primary processing is carried out on the aluminum nitride ceramic sheet to form a primary surface hole S6: setting a processing mode and laser track parameters of secondary processing; s7: and (4) carrying out secondary processing on the aluminum nitride ceramic plate, and standing and cooling. Compared with the prior art, the aluminum nitride ceramic wafer is processed twice through primary processing and secondary processing, so that the aperture of an inlet and an outlet of a hole on the surface of the aluminum nitride, the hole taper, the appearance of the inlet and the outlet and the appearance of a side wall of the hole on the surface of the aluminum nitride are improved.
Description
Technical Field
The invention relates to a ceramic surface hole processing method, in particular to a nanosecond laser processing method for ceramic surface holes based on processing track optimization.
Background
Aluminum nitride has various characteristics at room temperature and is widely used in industry. For example, the material can be used for insulating substrates of high-power semiconductor devices and heat dissipation substrates and packaging substrates of large-scale and ultra-large-scale integrated circuits based on higher resistivity, insulating strength, thermal conductivity and lower thermal expansion coefficient and dielectric constant; a surface wave device usable in a high frequency information processor based on its high acoustic wave propagation velocity; based on high fire resistance and high temperature chemical stability, the crucible can be used for manufacturing crucibles working at 1400-2000 degrees. Among them, aluminum nitride is most widely used as a ceramic substrate for electronic chips. And the processing of large-area interconnected structures such as ceramic chip surface holes, microgrooves and the like can not be completed by the traditional processing modes such as mechanical stamping, electric spark processing and the like, and the laser processing is taken as a non-contact processing mode, so that the method has the advantages which are not possessed by the traditional processing modes when the aluminum nitride ceramic substrate is processed, such as high processing precision, good processing quality, high processing efficiency and the like.
In order to ensure the working life of the aluminum nitride ceramic surface hole, in the processing process of the aluminum nitride ceramic surface hole, the difference of the sizes of the inlet and outlet holes should be reduced as much as possible to ensure the smaller taper of the whole hole; meanwhile, the problem of poor quality of the hole appearance must be solved, and the smooth and clean orifice after the processing is finished and the side wall of the hole does not fall off.
According to the relative motion relationship between the laser beam and the workbench, the laser processing of the ceramic surface hole can be divided into single-pulse/multi-pulse direct-impact processing without relative motion between the beam and the workbench and track scanning processing with relative motion. For holes with larger diameter requirements, track scanning type machining is often preferred, but in the machining process, the hole body is conical, so that part of laser beams are refracted through the inclined surface of the side wall to lose part of laser energy, the roundness of the hole outlet is poor, and the diameter of the outlet is obviously smaller than that of the inlet. Secondly, when a track scanning type machining process is adopted, the contact area of laser and a material is large, the generated thermal influence is very serious, and the defects that a large amount of splashed objects are generated at a machined hole opening, the side wall of the hole is seriously peeled off and the like are particularly shown.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a nanosecond laser processing method for ceramic surface holes based on processing track optimization.
The purpose of the invention can be realized by the following technical scheme:
a nanosecond laser processing method for ceramic surface holes based on processing track optimization comprises the following steps:
s1: building a nanosecond laser processing system;
s2: cutting and cleaning the aluminum nitride ceramic plate, and placing the aluminum nitride ceramic plate on a nanosecond laser processing system;
s3: setting adjustment parameters of a nanosecond laser processing system;
s4: setting a processing mode of primary processing and laser track parameters, wherein the processing mode of the primary processing is concentric circle full filling type processing;
s5: the nanosecond laser processing system carries out primary processing on the aluminum nitride ceramic wafer to form a primary surface hole, and the aluminum nitride ceramic wafer is stood for cooling;
s6: setting a processing mode of secondary processing and laser track parameters, wherein the processing mode of the secondary processing is concentric semi-filling processing, and the processing central axis of the secondary processing is the same as that of the primary processing;
s7: and (3) carrying out secondary processing on the aluminum nitride ceramic wafer by the nanosecond laser processing system, standing and cooling to finish processing.
The laser track parameters comprise a filling mode, a planned radius, a filling line interval and the number of filling lines, the planned radius of the secondary processing comprises a planned maximum radius and a planned minimum radius, the filling line interval of the primary processing is larger than the filling line interval of the secondary processing, and the planned maximum radius of the secondary processing is smaller than or equal to the planned radius of the primary processing.
The laser trajectory parameters of the primary processing in S4 are: the filling mode is concentric circle full filling, and the planning radius is R1The distance between the filling lines is D, and correspondingly, the number of the filling lines is D
And (3) strips.
In S6The laser track parameters of the secondary processing are as follows: the filling mode is concentric circle partial filling, and the maximum radius is planned to be R2The minimum radius is programmed to be r, the space between the filling lines is d, and the number of the filling lines is set to be
Strips in which the pitch of the filling lines of the primary processing is greater than the pitch of the filling lines of the secondary processing, i.e. D>d, the planned maximum radius of the secondary processing is less than or equal to the planned radius of the primary processing, namely R2≤R1And the planned minimum radius is less than the planned maximum radius, r<R2。
The adjustment parameters described in S3 include laser wavelength, laser power, repetition rate, pulse width, scanning speed, and number of scans.
The laser wavelength is 355nm, the laser power is more than 0W and less than or equal to 12W, the range of the repetition frequency is 50-150 kHz, the range of the pulse width is 11-23 ns, and the scanning speed is more than 0mm/s and less than or equal to 1000 mm/s.
The specific steps of S2 are: cutting the aluminum nitride ceramic wafer into squares, putting the aluminum nitride ceramic wafer into acetone for ultrasonic cleaning after cutting, then washing and drying the aluminum nitride ceramic wafer by using distilled water, and then placing the aluminum nitride ceramic wafer on a nanosecond laser processing system.
The nanosecond laser processing system in S1 includes nanosecond pulse laser, reflector group, scanning mirror that shakes, field lens, processing platform, treater and the mirror controller that shakes, and the laser that nanosecond pulse laser sent is in proper order through reflector group, scanning mirror that shakes, field lens action on the processing platform, nanosecond pulse laser, the mirror controller that shakes be connected with the treater respectively, the mirror controller that shakes be connected with the scanning mirror that shakes.
Compared with the prior art, the invention has the following advantages:
(1) according to the invention, the aluminum nitride ceramic wafer is processed twice through primary processing and secondary processing, the primary processing preliminarily forms ceramic surface holes, and the secondary processing carries out shape modification processing on the ceramic surface holes, so that the processing quality of the aluminum nitride ceramic surface holes is improved;
(2) when the method is used for processing, the distance between the filling lines of the secondary processing laser tracks is smaller than that of the primary processing, so that the aperture of the inlet and the outlet of the aluminum nitride surface hole, the hole taper, the appearance of the inlet and the outlet and the appearance of the side wall are improved;
(3) the method is simple to operate, can finish machining by utilizing a common nanosecond laser machining system, does not need additional equipment and operation, has a good machining effect, and is easy to realize.
Drawings
FIG. 1 is a schematic structural diagram of a nanosecond laser ceramic processing system according to the invention;
FIG. 2 is a flow chart of a nanosecond laser processing method for ceramic surface holes based on processing trajectory optimization according to the invention;
FIG. 3 is a schematic diagram of the nanosecond laser ceramic processing system of the invention for primary processing of an aluminum nitride ceramic wafer;
FIG. 4 is a schematic diagram of the nanosecond laser ceramic processing system of the invention after primary processing of an aluminum nitride ceramic wafer;
FIG. 5 is a schematic diagram of the nanosecond laser ceramic processing system of the invention for secondary processing of aluminum nitride ceramic wafers;
FIG. 6 is a detailed track diagram of the primary processing of the aluminum nitride ceramic wafer according to the present invention;
FIG. 7 is a detailed trace diagram of the secondary processing of the aluminum nitride ceramic wafer according to the present invention;
FIG. 8 is a graph comparing the inlet profile after the secondary processing in the present invention with the inlet profile after the single processing in the example;
FIG. 9 is a graph comparing the exit profile after the secondary processing of the present invention with the exit profile of a single processing operation in the example embodiment;
FIG. 10 is a graph comparing the profile of the sidewall after the secondary processing of the present invention with the profile of the sidewall after the single processing of the example.
The device comprises a nanosecond pulse laser 1, a nanosecond pulse laser 2, a reflector group 3, a scanning galvanometer 4, a field lens 5, a galvanometer controller 6, a processor 7, a processing platform 8 and an aluminum nitride ceramic chip.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments. Note that the following description of the embodiments is merely a substantial example, and the present invention is not intended to be limited to the application or the use thereof, and is not limited to the following embodiments.
Examples
A nanosecond laser processing method based on processing track optimization is based on a nanosecond laser processing system, as shown in figure 1, the nanosecond laser processing system comprises a nanosecond pulse laser 1, a reflector group 2, a scanning galvanometer 3, a field lens 4, a processing platform 7, a processor 6 and a galvanometer controller 5, laser emitted by the nanosecond pulse laser 1 sequentially acts on the processing platform 7 through the reflector group, the scanning galvanometer 3 and the field lens 4, the nanosecond pulse laser 1 and the galvanometer controller 5 are respectively connected with the processor 6, and the galvanometer controller 5 is connected with the scanning galvanometer 3.
A nanosecond laser processing method for ceramic surface holes based on processing track optimization is shown in figure 2 and specifically comprises the following steps:
s1: and (5) setting up a nanosecond laser processing system.
S2: cutting the aluminum nitride ceramic wafer 8 into squares, putting the aluminum nitride ceramic wafer 8 into acetone for ultrasonic cleaning after cutting, then washing and drying the aluminum nitride ceramic wafer 8 by distilled water, and then placing the aluminum nitride ceramic wafer on a nanosecond laser processing system.
The thickness of the aluminum nitride ceramic sheet 8 used in this embodiment is 0.38mm, and in this embodiment, the side length of the cut aluminum nitride ceramic sheet 8 is 20 mm.
S3: setting adjustment parameters of a nanosecond laser processing system, wherein the adjustment parameters comprise laser wavelength, laser power, repetition frequency, pulse width, scanning speed, planning radius and scanning times, the laser wavelength is 355nm, the laser power is larger than 0W and smaller than or equal to 12W, the range of the repetition frequency is 50-150 kHz, the range of the pulse width is 11-23 ns, and the scanning speed is larger than 0mm/s and smaller than or equal to 1000 mm/s.
In this example, the laser wavelength was set to 355nm, the laser power was set to 7W, the repetition frequency was set to 50kHz, the pulse width was set to 12ns, the scanning speed was set to 20mm/s, and the number of scans was set to 15.
S4: and setting a processing mode and laser track parameters of primary processing.
The processing mode of the primary processing in the S4 is concentric circle full filling type processing, the laser track parameters comprise a filling mode, a planning radius, a filling line interval and a filling line number, the filling mode of the primary processing is concentric circle full filling, and the planning radius is R1The distance between the filling lines is D, and correspondingly, the number of the filling lines is D
Bars, as shown in FIG. 6, the laser tracks of the primary processing are such that the radii decrease sequentially from R to D to zero
One concentric circle, i.e. laser track, of radius R1、R1-D、R12D, …, D
The concentric circles of (a).
In this embodiment, the laser trajectory parameters of the primary processing are: the filling mode is concentric circle full filling, the planning radius is 0.09mm, the filling line interval is 0.015mm, and the number of the filling lines is 6.
S5: as shown in fig. 3, the nanosecond laser processing system performs primary processing on the aluminum nitride ceramic sheet 8 to form primary surface holes, and stands to cool.
As shown in fig. 6, in the primary processing, the laser traces were six concentric circles having a radius of 0.015mm, 0.03mm, 0.045mm, 0.06mm, 0.075mm, 0.09mm, and as shown in fig. 4, a primary surface hole having a radius of 0.09mm was formed.
S6: and setting a processing mode and laser track parameters of secondary processing. As shown in fig. 7, the laser trajectory parameters of the secondary processing are: the filling mode is concentric circle partial filling, and the maximum radius is planned to be R2The minimum radius is programmed to be r, the space between the filling lines is d, and the number of the filling lines is set to be
Strips, the spacing of the filling lines of the primary processing being greater than the spacing of the filling lines of the secondary processing, i.e. D>d, the maximum radius of the secondary processing plan is less than or equal to the radius of the primary processing plan, namely R2≤R1And the planned minimum radius is less than the planned maximum radius, r<R2. So that the laser track of the secondary processing is from R in radius2Decreasing d to r in sequence
One concentric circle, i.e. laser track, having a radius of R2、R2-d、R22d, …, r
Concentric circles.
The processing center axis of the secondary processing in S6 is the same as the processing center axis of the primary processing, and in this embodiment, the laser trajectory parameters of the secondary processing are: the filling mode is that concentric circles are partially filled, the maximum planned radius is 0.09mm, the minimum planned radius is 0.081mm, the space between filling lines is 0.001mm, and the number of the filling lines is 10.
S7: as shown in fig. 5, the nanosecond laser processing system performs secondary processing on the aluminum nitride ceramic sheet 8, and stands still for cooling to complete the processing.
As shown in fig. 7, in the secondary processing, ten concentric circles having a radius of 0.081mm, 0.082mm, 0.083mm, 0.084mm, 0.085mm, 0.086mm, 0.087mm, 0.088mm, 0.089mm, and 0.09mm were formed as laser traces, and a ceramic surface hole having a radius of 0.09mm was formed, thereby completing the processing.
For comparison, the steps S1 to S5 are repeated for another aluminum nitride ceramic sheet 8 to perform a single machining operation, so as to obtain a single machined surface hole, which is compared with the ceramic surface hole machined by the present invention.
Fig. 8 a is an electron microscope image of the inlet topography of the ceramic surface hole obtained by the present invention, and fig. 8 b is an electron microscope image of the inlet topography of the single-time processed surface hole.
Fig. 9 a is an electron microscope image of the outlet morphology of the ceramic surface hole obtained by the present invention, and fig. 9 b is an electron microscope image of the outlet morphology of the single processed surface hole.
Fig. 10 a is an electron microscope image of the sidewall morphology of the ceramic surface hole obtained by the present invention, and fig. 10 b is an electron microscope image of the sidewall morphology of the single-process surface hole, the wall of the ceramic surface hole obtained by the present invention is smooth, almost no crack exists, and the overall taper of the hole is obviously reduced.
The above embodiments are merely examples and do not limit the scope of the present invention. These embodiments may be implemented in other various manners, and various omissions, substitutions, and changes may be made without departing from the technical spirit of the present invention.
Claims (2)
1. A nanosecond laser processing method for ceramic surface holes based on processing track optimization is characterized by comprising the following steps:
s1: building a nanosecond laser processing system;
s2: cutting and cleaning the aluminum nitride ceramic plate (8), and placing the aluminum nitride ceramic plate (8) on a nanosecond laser processing system;
s3: setting adjustment parameters of a nanosecond laser processing system;
s4: setting a processing mode of primary processing and laser track parameters, wherein the processing mode of the primary processing is concentric circle full filling type processing;
s5: the nanosecond laser processing system carries out primary processing on the aluminum nitride ceramic plate (8) to form a primary surface hole, and the primary surface hole is stood for cooling;
s6: setting a processing mode of secondary processing and laser track parameters, wherein the processing mode of the secondary processing is concentric semi-filling processing, and the processing central axis of the secondary processing is the same as that of the primary processing;
s7: the nanosecond laser processing system carries out secondary processing on the aluminum nitride ceramic plate (8), and stands and cools to complete processing;
the laser track parameters comprise a filling mode, a planned radius, a filling line interval and the number of filling lines, the planned radius of the secondary processing comprises a planned maximum radius and a planned minimum radius, the filling line interval of the primary processing is larger than the filling line interval of the secondary processing, the planned maximum radius of the secondary processing is smaller than or equal to the planned radius of the primary processing,
the laser trajectory parameters of the primary processing in S4 are: the filling mode is concentric circle full filling, and the planning radius is R1The distance between the filling lines is D, and correspondingly, the number of the filling lines is D
The strip(s) are (are),
the laser trajectory parameters of the secondary processing in S6 are: the filling mode is concentric circle partial filling, and the maximum radius is planned to be R2The minimum radius is programmed to be r, the space between the filling lines is d, and the number of the filling lines is set to be
Strips in which the pitch of the filling lines of the primary processing is greater than the pitch of the filling lines of the secondary processing, i.e. D>d, the planned maximum radius of the secondary processing is less than or equal to the planned radius of the primary processing, namely R2≤R1，
The adjustment parameters described in S3 include laser wavelength, laser power, repetition rate, pulse width, scanning speed and number of scans,
the laser wavelength is 355nm, the laser power is more than 0W and less than or equal to 12W, the range of the repetition frequency is 50-150 kHz, the range of the pulse width is 11-23 ns, the scanning speed is more than 0mm/s and less than or equal to 1000mm/s,
the specific steps of S2 are: cutting the aluminum nitride ceramic plate (8) into squares, putting the aluminum nitride ceramic plate (8) into acetone for ultrasonic cleaning after cutting, then washing and drying the aluminum nitride ceramic plate (8) by distilled water, and then placing the aluminum nitride ceramic plate on a nanosecond laser processing system.
2. The nanosecond laser processing method based on processing track optimization according to claim 1, wherein the nanosecond laser processing system in S1 comprises a nanosecond pulse laser (1), a reflector group (2), a scanning galvanometer (3), a field lens (4), a processing platform (7), a processor (6) and a galvanometer controller (5), wherein laser emitted by the nanosecond pulse laser (1) sequentially passes through the reflector group, the scanning galvanometer (3) and the field lens (4) to act on the processing platform (7), the nanosecond pulse laser (1) and the galvanometer controller (5) are respectively connected with the processor (6), and the galvanometer controller (5) is connected with the scanning galvanometer (3).
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| CN111515548B (en) * | 2020-04-09 | 2021-05-18 | 大连理工大学 | Method for optimizing laser processing scanning track of micro-curvature radius antenna |
| CN111590197A (en) * | 2020-05-11 | 2020-08-28 | 苏州优快激光科技有限公司 | Ceramic substrate porous array picosecond laser galvanometer scanning drilling system and method |
| CN112975167A (en) * | 2021-01-28 | 2021-06-18 | 上海工程技术大学 | Laser processing method for improving appearance quality of ceramic surface holes |
| CN112917027A (en) * | 2021-02-05 | 2021-06-08 | 西安交通大学 | Small-taper high-quality and high-efficiency processing device and method for conducting hole in surface of packaging substrate |
| CN112916503A (en) * | 2021-03-22 | 2021-06-08 | 西安交通大学 | Processing method for ceramic surface glazing |
| CN115446480A (en) * | 2022-10-27 | 2022-12-09 | 青岛理工大学 | In-situ hole repairing ultrafast laser micropore machining method |
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