CN110913609A

CN110913609A - Preparation process of high-frequency photoelectric plate with blind buried hole structure

Info

Publication number: CN110913609A
Application number: CN201910956327.9A
Authority: CN
Inventors: 夏许冬; 姚育松
Original assignee: Yixing Silicon Valley Electronic Technology Co Ltd
Current assignee: Yixing Silicon Valley Electronic Technology Co Ltd
Priority date: 2019-10-10
Filing date: 2019-10-10
Publication date: 2020-03-24

Abstract

The invention discloses a preparation process of a high-frequency photoelectric plate with a blind buried hole structure, and relates to the technical field of PCB production. Through copper plating in the through hole, electroplating and filling of the blind hole, wiring on the blind hole and electric conduction among all layers through the hole-metallized blind hole, electric signal connection and conduction among any layers are realized, and the wiring density of the PCB is improved.

Description

Preparation process of high-frequency photoelectric plate with blind buried hole structure

Technical Field

The invention relates to the technical field of PCB (printed circuit board) production, in particular to a preparation process of a high-frequency photoelectric board with a blind buried hole structure.

Background

With the development of electronic products towards lightness and miniaturization, the whole production area of the PCB is required to be smaller and smaller. While achieving the same electrical function, the provided wiring area is getting smaller and smaller, and therefore, increasing the wiring density of the whole PCB becomes the only solution.

When the PCB is designed and wired in a CAD mode, interlayer electric signals need to be conducted through the through holes, and due to the existence of the through holes, the wiring density of the PCB is greatly influenced. The PAD in the traditional via hole BGA area is connected with the via hole, and the specific production flow is as follows: the upper flow → lamination → mechanical drilling → copper deposition → electrocoppering → outer layer pattern → pattern electroplating → etching → green oil plug hole → solder mask → lower flow, thereby realizing the connection of the interlayer signal and the external circuit, and the wiring density is low.

Disclosure of Invention

In order to solve the above technical problems, the present invention provides a process for preparing a high frequency photovoltaic panel having a blind buried via structure, wherein an inner layer is connected to an adjacent surface layer through a blind via, the blind via is a via hole connecting the surface layer and the inner layer and not penetrating through the entire panel,

the preparation process of the inner layer sub-board comprises the following steps: upper flow → laminating → thinning copper → brown oxide → laser drilling → copper deposition → flash plating → outer layer pattern → acid etching → lower flow;

the preparation process of the mother board comprises the following steps: upper flow → lamination → copper thinning → brown oxidation → laser drilling → copper deposition → flash plating → outer layer pattern → pattern plating → acid etching → lower flow.

The technical effects are as follows: the invention provides a preparation process of a high-frequency photoelectric board with a blind buried hole design, which realizes copper plating in a through hole, electroplating and filling of the blind hole, wiring on the blind hole and electric conduction among all layers through the hole-metalized blind hole, thereby realizing electric signal connection and conduction among any layers and improving the wiring density of a PCB.

The technical scheme of the invention is further defined as follows:

according to the preparation process of the high-frequency photoelectric plate with the blind buried hole structure, the blind holes are only formed in the surface of the inner-layer sub-plate.

According to the preparation process of the high-frequency photoelectric board with the blind buried hole structure, the blind holes are formed in the surface of the inner-layer daughter board, the inner-layer daughter board is pressed to form the mother board after the electroplating filling process is used, and the blind holes are also formed in the position, corresponding to the blind holes of the inner-layer daughter board, on the surface of the mother board.

In the preparation process of the high-frequency photoelectric plate with the blind buried hole structure, the aperture of the laser drilling hole is 75-125 mu m.

The invention has the beneficial effects that:

(1) the blind holes can be independently arranged on the surface of the inner-layer sub-board, and the blind holes are plated and filled by using a blind hole electroplating filling process, so that wiring on the blind holes can be realized, and the wiring interval is reduced;

(2) blind holes can be designed on the mother board in the invention, laser blind holes are manufactured above the original blind holes of the daughter board, so that electrical conduction between any layers is realized, and the area of the PCB is more miniaturized;

(3) the blind holes are manufactured in a laser mode, the laser drilling hole diameter is equal to 1/3-1/4 of the mechanical drilling hole diameter, and more wiring space is provided;

(4) the invention makes the thickness of the PCB thinner, the laser blind hole is connected with the adjacent outer layer, thus greatly saving the wiring space of the inner layer;

(5) the invention ensures that the PCB has higher reliability, and the blind hole electroplating filling process is adopted, so that copper plating has better ductility and conductivity, and the integrity of electric signals can be effectively ensured.

Drawings

FIG. 1 is a schematic view of example 1 of the present invention;

wherein: 1. an inner layer sub-board; 2. a motherboard; 3. and (4) blind holes.

Detailed Description

Example 1

In the preparation process of the high-frequency photovoltaic panel with the blind and buried hole structure provided by this embodiment, as shown in fig. 1, in the second-order blind hole 3 and buried hole design, the inner layer is communicated with the adjacent surface layer through the blind hole 3, and the blind hole 3 is a via hole connecting the surface layer and the inner layer and does not penetrate through the whole panel. The surface of the inner daughter board 1 is provided with a blind hole 3, after the electroplating filling process is used, the inner daughter board 1 is pressed to form a mother board 2, the blind hole 3 is also arranged at the position, corresponding to the blind hole 3 of the inner daughter board 1, on the surface of the mother board 2, and the aperture of laser drilling is 75-125 μm.

The preparation process of the inner sub-board 1 comprises the following steps: upper flow → laminating → thinning copper → brown oxide → laser drilling → copper deposition → flash plating → outer layer pattern → acid etching → lower flow;

the preparation process of the mother board 2 comprises the following steps: upper flow → lamination → copper thinning → brown oxidation → laser drilling → copper deposition → flash plating → outer layer pattern → pattern plating → acid etching → lower flow.

Example 2

The manufacturing process of the high-frequency photoelectric board with the blind buried hole structure provided in this embodiment is different from that of embodiment 1 in that the blind holes 3 are only arranged on the surface of the inner sub-board 1.

Compared with the traditional design, the invention adopts a new process design scheme, and the blind hole electroplating filling mode can effectively increase the wiring space, improve the wiring density, and simultaneously ensure that the PCB is more exquisite, thinner and lighter and has higher quality reliability.

In addition to the above embodiments, the present invention may have other embodiments. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope of the claims of the present invention.

Claims

1. A preparation process of a high-frequency photoelectric plate with a blind buried hole structure is characterized by comprising the following steps: the inner layer is communicated with the adjacent surface layer through a blind hole (3), the blind hole (3) is a through hole which connects the surface layer and the inner layer and does not penetrate through the whole plate,

the preparation process of the inner layer sub-board (1) comprises the following steps: upper flow → laminating → thinning copper → brown oxide → laser drilling → copper deposition → flash plating → outer layer pattern → acid etching → lower flow;

the preparation process of the mother board (2) comprises the following steps: upper flow → lamination → copper thinning → brown oxidation → laser drilling → copper deposition → flash plating → outer layer pattern → pattern plating → acid etching → lower flow.

2. The process for preparing a high-frequency photoelectric plate containing a blind buried via structure according to claim 1, wherein: the blind holes (3) are only arranged on the surface of the inner-layer daughter board (1).

3. The process for preparing a high-frequency photoelectric plate containing a blind buried via structure according to claim 1, wherein: the surface of the inner-layer daughter board (1) is provided with the blind hole (3), after the electroplating filling process is used, the inner-layer daughter board (1) is pressed to form the mother board (2), and the blind hole (3) is also arranged at the position, corresponding to the blind hole (3) of the inner-layer daughter board (1), of the surface of the mother board (2).

4. The process for preparing a high-frequency photoelectric plate containing a blind buried via structure according to claim 3, wherein: the aperture of the laser drilling is 75-125 μm.