CN110911263A

CN110911263A - Magnetic field distribution homogenizing device for magnetron sputtering process chamber

Info

Publication number: CN110911263A
Application number: CN201910883185.8A
Authority: CN
Inventors: 侯悦民
Original assignee: Beijing Information Science and Technology University
Current assignee: Beijing Information Science and Technology University
Priority date: 2019-09-18
Filing date: 2019-09-18
Publication date: 2020-03-24
Anticipated expiration: 2039-09-18
Also published as: CN110911263B

Abstract

The invention discloses a magnetic field distribution homogenizing device for a magnetron sputtering process chamber. A group of magnets on the flexible four-bar mechanism connecting rod do reciprocating motion relative to the flexible four-bar mechanism frame in different motion tracks and do rotary motion along with the connecting rod mechanism, so that non-radiative magnetic field distribution with non-periodic or weak periodic change is formed. According to the magnetic field distribution uniformization device, the magnetic field distribution can be distributed in a non-periodic or weak periodic and non-radial manner, so that the magnetic field distribution uniformity can be improved, and further, the sputtering uniformity of the target material and the utilization rate of the target material can be improved. The invention realizes the homogenization of the magnetic field distribution by utilizing the curve characteristic of the connecting rod of the flexible four-bar mechanism and the cam mechanism, thereby improving the uniformity and the sputtering rate of the flow field in the process chamber and improving the controllability of the flow field.

Description

Magnetic field distribution homogenizing device for magnetron sputtering process chamber

Technical Field

The invention relates to a magnetic field distribution homogenizing device for a magnetron sputtering process chamber.

Background

In the integrated circuit chip manufacturing process, such as integrated circuit CMOS, semiconductor elements, thin film transistors, etc., most of the device structure layers fabricated on the substrate are realized by deposition techniques. Deposition refers to the process of growing a thin film of material by physical or chemical deposition onto a substrate surface. The film thickness is on the order of nanometers, much smaller than other structure dimensions (e.g., 6 inch, 18 inch wafer diameter). Deposition is, in a broad sense, an additive manufacturing process. The preparation techniques using the deposition method mainly include Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD). PVD uses evaporation or sputtering to convert solid materials into vapor, which condenses and deposits on the surface of a substrate (silicon wafer), and is the main method for preparing metal thin films. Magnetron sputtering is one type of PVD. Sputtering is the deposition of a thin film on a substrate by driving off the material of a target and driving it toward the substrate. The target is a material source and a negative bias is applied between the target and the substrate. A process gas, such as Ar, is introduced into the chamber. The electrons collide with Ar atoms under the action of an electric field to generate Ar ions and electrons, the Ar ions accelerate to bombard the target under the action of the electric field, and the atoms and the molecules on the surface of the solid target are subjected to energy exchange and then sputtered out from the surface of the solid. The sputtered neutral molecules and atoms deposit on the substrate to form a film. By introducing a magnetic field on the surface of the target cathode, electrons flying to the substrate are influenced by the magnetic force of the magnetic field Loran, charged particles are confined in a plasma region close to the target surface, the plasma density near the target is improved, and the sputtering rate of the target is increased. The magnetic field traps charged electrons and ions, increasing the plasma density and thus the sputtering rate.

Researches show that the uneven magnetic field can cause the target to generate remarkable uneven sputtering, so that the utilization rate of the target is low, and the reasonable magnetron design can improve the magnetic field distribution so as to improve the sputtering uniformity of the target, thereby improving the uniformity of a deposited film and the characteristics of the film. Research shows that the magnetron has better sputtering deposition uniformity at the outer edge position of the target. However, a part of the sputtered atoms tend to be redeposited in the inner portion of the target and concentrated near the rotation axis. If the re-deposited film becomes thicker, it is easily peeled off to deteriorate the quality of the film on the substrate. Therefore, the use of a varying magnetic field can improve sputtering uniformity and thus deposited film uniformity. The prior art proposes mounting a magnetron on a rotating support and changing the position of the magnet by changing the position of the support to change the position of the magnetic field. In the related art, a group of magnets is mounted on a swing frame, the swing frame is connected with a support through a revolute pair, the support rotates, and the swing frame swings under the action of inertia force (US20100252417a 1). And the connecting rod-planetary gear train combined mechanism is used for improving the uniform distribution of the magnetic field. However, by adopting the methods, the motion track of the magnetron still presents periodic regularity and radial distribution, the sputtering is concentrated in the middle of the target, and the target sputtering is still uneven.

Disclosure of Invention

The present invention is directed to solving one of the above-mentioned problems in the related art. Therefore, the invention provides a magnetic field distribution homogenizing device for a magnetron sputtering process chamber, which can form a non-radiative magnetic field with non-periodic or weak periodic change, so that the magnetic field distribution uniformity can be improved, and the sputtering uniformity of a target material and the utilization rate of the target material are improved.

According to an aspect of the present invention, there is provided a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber, comprising:

a housing defining a vacuum chamber therein,

a lifting mechanism arranged in the vacuum chamber and used for lifting the substrate,

a rotating shaft is arranged on the rotating shaft,

a driving device for driving the rotating shaft to rotate,

flexible four-bar linkage, including frame, connecting rod, side link and flexible hinge, flexible four-bar linkage establishes in the cavity and be located the target top, wherein: the flexible four-bar mechanism is connected with the rotating shaft, when the driving device drives the rotating shaft to rotate, the rotating shaft drives the flexible four-bar mechanism to rotate,

the magnetron driving device is connected with the rack and is used for driving the four-bar linkage mechanism to rotate,

a group of magnets are arranged in the magnetic field,

a substrate support table assembly arranged on the top of the lifting mechanism for arranging the substrate on the substrate support table assembly,

a magnetron positioned at an upper portion of the target,

the speed regulating motor is used for driving the rotor so as to drive the flexible four-bar mechanism to swing within a certain range,

at least one flexible four-bar linkage mounted on the rotor,

a group of magnets are arranged on the connecting rod,

the mounting position of the rotor is one selected from:

the top of the vacuum chamber, and

the side surface of the vacuum chamber,

the rotor is mounted asymmetrically with respect to the target and the chamber,

a set of magnets mounted on the connecting rod,

target runner, target bracket, runner bracket, constant diameter cam annular, target drive arrangement, wherein:

the constant-diameter cam ring groove is formed on the upper surface of the target rotating wheel,

the target material rotating wheel is used for driving the target material to rotate,

the target material bracket is in a ring shape,

the target material bracket is arranged in the equal-diameter cam ring groove,

the target material is arranged on the target material bracket,

the wheel bracket is supported by the housing,

the target material rotating wheel is arranged on the rotating wheel bracket through a crossed bearing to be driven by the target material driving device so as to realize rotation,

the group of magnets are positioned at different positions of the connecting rod and move along with the connecting rod.

The invention discloses a magnetic field distribution homogenizing method for a magnetron sputtering process chamber, which is characterized in that a motor is input with rotary motion, a rotor rotates to drive a flexible four-bar mechanism to integrally rotate, a group of magnets arranged on a connecting rod make reciprocating compound motion relative to a rod-shaped rotor under the action of inertia force and flexible hinge elastic force, the eccentric position of a target relative to the chamber is adjusted by adjusting the rotation angle of a cam, and the magnetic field distribution is controlled by controlling the installation position and the magnet quality of the group of magnets, the rotation speed of the rotor, the installation position of the flexible four-bar mechanism and the elasticity of the flexible hinge, so that the magnetic field distribution uniformity is improved, the sputtering uniformity of the target is improved under the condition of not increasing complex control and mechanical devices, and the film uniformity and. The method for homogenizing the magnetic field distribution of the magnetron sputtering process chamber achieves the purposes of traversing the magnetic field area on the surface of the target and improving the magnetic field uniformity distribution through the compound motion of the flexible four-bar mechanism; through the runner in the middle of the side face of the cavity, the magnetron is driven to move from the outside of the side face of the cavity, under the condition that the height of equipment is not increased, the phenomenon that the magnetic field in the middle of the target is concentrated and distributed, the sputtering of the target is uneven, the phenomenon that the temperature of the middle of the target is too high due to the concentrated sputtering is reduced, and the problems that the height of the cavity and the height of the external equipment are increased and the eccentric position of a rotor is difficult to adjust due to the fact that. In addition, because the back (upper) of the target is not blocked by the rod-shaped bracket, a cooling system is convenient to arrange on the back of the target, and the problem that the cooling system is not beneficial to arrangement due to the composite motion of the magnetron is solved.

The method for homogenizing the magnetic field distribution of the magnetron sputtering process chamber can set the length parameter, the section parameter, the mass distribution of the flexible four-bar mechanism, the elasticity of the flexible hinge, the mounting position of the flexible four-bar mechanism, the eccentric position of a target material, the arrangement position of a group of magnets on a connecting rod and the mounting position of the axis of a rod-shaped rotor according to the magnetic field distribution requirement, achieves the requirement of regulating the magnetic field distribution, and has the advantages of simple structure, convenient processing and easy realization. In addition, the flexible four-bar mechanism is an integrated mechanism, the 3D printing technology is easy to realize, and due to the fact that connection modes such as a bearing and a bolt are removed and the flexible four-bar mechanism hinge does not need to be lubricated, the requirements of reducing pollution of parts and cavities, improving the quality of films and reducing maintenance cost are met. The swing range of the flexible four-bar mechanism is controlled by adjusting the elasticity of the hinge of the flexible four-bar mechanism, so that the requirement of controlling the variation range of the magnetic field area is met. The flexible four-bar mechanism flexible hinge can meet the requirement of relative swing by adopting composite materials, multifunctional materials, gradient materials and variable size parameters. Furthermore, the requirement of controlling the small-amplitude deformation of the hinge can be met by adopting a piezoelectric material through controlling voltage.

According to the method for homogenizing the magnetic field distribution of the magnetron sputtering process chamber, the eccentric adjusting device is arranged on the inner ring of the middle rotating wheel, and the purpose of improving the uniform traversing of the magnetic field on the surface area of the target is achieved by adjusting the installation positions of the middle rotating wheel and the flexible four-bar mechanism and the relative positions of the middle rotating wheel and the flexible four-bar mechanism with the target and the chamber; an eccentric circular groove is arranged on the inner side of the middle rotating wheel, and the eccentric position of the target material is adjusted by adjusting the rotating angle of the rotating wheel.

The magnetic field distribution homogenizing device for the magnetron sputtering process chamber comprises: a housing defining a chamber therein for magnetron sputtering; a substrate disposed within the chamber; a target disposed within the chamber, the target being positioned above and spaced apart from the substrate; the flexible four-bar mechanism is arranged in the cavity and is positioned above the target material; the magnets are arranged on the flexible four-bar mechanism connecting rod; the magnetron driving device is connected with the flexible four-bar mechanism rack and drives the four-bar mechanism to rotate so as to drive the magnets to do rotary motion, meanwhile, under the action of inertia force, a group of magnets do reciprocating swing relative to the four-bar mechanism rack, and different motion tracks are formed when the relative positions of the magnets and the rack are different, so that a non-periodic or weak-periodic changing and non-radiative magnetic field is formed.

According to the magnetic field distribution uniformization device for the magnetron sputtering process chamber, the group of magnets are arranged on the flexible four-bar mechanism connecting rod, the flexible four-bar mechanism is driven to rotate by the driving device, the group of magnets are driven to move, the magnetic field distribution can be in non-periodic and non-radial distribution, the magnetic field distribution uniformity can be improved, and the target sputtering uniformity and the target utilization rate can be improved.

According to some embodiments of the present invention, the flexible four-bar mechanism includes link bars and link rods connected in sequence, the frame is connected to the magnetron rotor, the magnets are provided on the link rods, and the link bars are respectively formed as cranks or rockers.

According to some embodiments of the present invention, the driving device is disposed above the housing, a mounting hole is disposed on a top surface of the housing, and the driving device is connected to a middle portion of the rack through a rotating shaft penetrating through the mounting hole.

Optionally, the shaft extends in an axial direction of the chamber and is disposed non-coaxially with the chamber.

Optionally, the magnetic field distribution uniformization apparatus for a magnetron sputtering process chamber further includes: the target is arranged on the rotating wheel and is eccentrically arranged with the rotating wheel; the rotating wheel driving device is connected with the rotating wheel and drives the rotating wheel to rotate so as to drive the target to move in a reciprocating manner.

Furthermore, a pinion is arranged between the rotating wheel driving device and the rotating wheel, gear teeth matched with the pinion are arranged on the outer peripheral surface of the rotating wheel, an eccentric ring is arranged on the upper surface of the rotating wheel to form an equal-diameter cam profile ring groove, and the target material bracket is installed in the equal-diameter cam ring groove. When the rotor rotates, the target bracket and the target move together in the radial direction relative to the rotor, so that the eccentric position of the target is changed.

According to some embodiments of the invention, the magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber further comprises: the magnetron driving device is characterized in that the flexible four-bar mechanism frame is connected with the driving device rotor, the driving device is arranged on one side of the shell and is positioned outside the cavity, and the driving device is connected with the flexible four-bar mechanism frame so as to drive the flexible four-bar mechanism to rotate under the driving of the driving device.

Optionally, the wheel assembly comprises: the motor drives the big gear to rotate the rotating wheel through the small gear, gear teeth matched with the small gear are arranged on the peripheral surface of the rotating wheel, and the rotating wheel is driven to rotate by the transmission gear; the hollow ring connecting piece is adjustably arranged on the connecting rotating wheel, and two ends of the first connecting rod are abutted against the inner side face of the hollow ring connecting piece.

Furthermore, the flexible four-bar mechanism frame comprises a frame, 2 side link rods and connecting rods which are respectively connected by flexible hinges to form relative swinging in a certain range. The sputtering position and the magnetic field position of the target can be controlled by adjusting the speed, the direction and the eccentric position of the rotor as well as the configuration and the size parameters of the flexible four-bar mechanism.

The constant diameter cam mechanism: according to the magnetic field distribution requirement, the relative positions of the target material, the chamber and the flexible four-bar mechanism are adjusted through the equal-diameter cam mechanism;

further, the hollow ring connecting piece is eccentrically arranged relative to the connecting rotating wheel.

According to some embodiments of the invention, the flexible four-bar mechanism is a one-piece moulding.

According to some embodiments of the invention, the rotational speed of the shaft is adjustable.

Drawings

FIG. 1 is a schematic structural diagram of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of the movement of a four-bar linkage of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of a four-bar linkage mechanism of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the invention;

FIG. 4 is a plan view of a partial structure of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the present invention;

FIG. 5 is a schematic structural diagram of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to other embodiments of the present invention;

FIG. 6 is a schematic structural diagram of a four-bar linkage mechanism of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to other embodiments of the present invention;

FIG. 7 is a schematic diagram of the inertial forces of a four-bar linkage of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the present invention;

FIG. 8 is a schematic diagram of a motion trajectory of a four-bar linkage mechanism of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the present invention;

FIG. 9 is a schematic diagram of a motion trajectory of a four-bar linkage mechanism of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the present invention;

FIG. 10 is a schematic diagram of a motion trajectory of a four-bar linkage mechanism of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the present invention;

FIG. 11 is a schematic diagram of a motion trajectory of a four-bar linkage mechanism of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the present invention;

FIG. 12 is a schematic diagram of a motion trajectory of a four-bar linkage mechanism of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the present invention;

fig. 13 is a schematic motion trajectory diagram of a four-bar linkage mechanism of a magnetic field distribution uniformizing apparatus for a magnetron sputtering process chamber according to an embodiment of the present invention.

Reference numerals:

100: a magnetic field distribution uniformizing device;

1: a drive device; 2: a motor bracket; 3: a rotating shaft; 4: a flexible four-bar linkage; 5: a set of magnets; 6: a target material bracket; 7: a target material rotating wheel; 8: a target material; 9: a substrate support table assembly; 10: a lifting mechanism; 11: an upper housing; 12: an upper chamber; 13: a seal ring; 14: a first gear: 15: a cross bearing; 16: a runner bracket; 17: a target driving device; 55: a lower housing; 19: a lower chamber; 20; a liner; 21; a vacuum pumping assembly; 22: a slider;

23: a third link; 24: a first flexible hinge; 25: a second link; 26: a first fixed hinge; 27: a second flexible hinge; 28: a fourth link; 29: a second fixed hinge; 30: a first link; 301: a first pole segment; 302: a second pole segment;

32: a chute; 33: a sealing groove; 34: an equal-diameter cam ring groove;

43: a transmission connection assembly; 45, a first step of; a hollow ring connector; 46: connecting a rotating wheel; 58: a second gear;

65: a second link centroid; 66: a fourth link centroid; 67: a third link centroid;

o1: the geometric center of the target material rotating wheel; p: a third link instantaneous center of rotation P;

i: and the flexible four-bar linkage mechanism is a motion space.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.

A magnetic field distribution uniformizing apparatus 100 for a magnetron sputtering process chamber according to an embodiment of the present invention is described in detail below with reference to fig. 1 to 13. Wherein, the up-down direction is based on the up-down direction when the magnetron sputtering process chamber is normally placed.

As shown in fig. 1 and 5, the magnetic field distribution uniformizing apparatus 100 for a magnetron sputtering process chamber according to the present invention includes: a housing, a substrate (not shown), a target 8, a four-bar linkage 4, a set of magnets 5 and a drive 1.

Wherein the housing may be formed in a substantially cylindrical shape, a chamber for performing magnetron sputtering may be defined in the housing, as shown in fig. 1 and 5, a substrate may be disposed in the chamber, a target 8 may be disposed in the chamber, the target 8 may be located above the substrate, and the target 8 may be spaced apart from the substrate, so as to deposit target atoms on the target 8 on the substrate to form a film, thereby implementing magnetron sputtering operation.

As shown in fig. 1 and 5, a four-bar linkage mechanism may be disposed in the chamber, and the four-bar linkage mechanism may be located above the target 8, the four-bar linkage mechanism may be a flexible four-bar linkage mechanism 4, and the magnets 5 may be mounted on the flexible four-bar linkage mechanism 4, so that the flexible four-bar linkage mechanism 4 may drive one set of magnets 5 to move to generate a magnetic field.

The driving device 1 can be connected with one connecting rod in the four-bar mechanism 4, and the driving device 1 can drive the four-bar mechanism 4 to rotate so as to drive the group of magnets 5 to move and form a variable non-radiative magnetic field, so that the magnetic field can be distributed in a non-periodic and non-radial manner, the distribution uniformity of the magnetic field can be improved, and the sputtering uniformity of the target material 8 and the utilization rate of the target material 8 can be improved.

It can be understood that the four-bar linkage is the flexible four-bar linkage 4, under the driving of the driving device 1, the flexible four-bar linkage 4 can rotate, and at the same time, the flexible four-bar linkage 4 can move under the action of self inertia force, such as reciprocating swing or rotary motion, so that the flexible four-bar linkage 4 can drive the group of magnets 5 to do reciprocating swing or rotary motion, the movement of the magnets 5 forms a plurality of types, and further a changing magnetic field can be generated.

And along with the change of the inertia force in the moving process, the swinging amplitude and the moving direction of the flexible four-bar linkage mechanism 4 can be changed, the flexible four-bar linkage mechanism 4 can drive the magnet 5 to move, so that the magnetic field is in non-radiative distribution, the middle and the edge positions of the surface of the target material 8 are traversed, and the magnetic field can uniformly traverse the surface of the target material 8 to a certain extent.

Meanwhile, the motion trail of the group of magnets 5 is related to the positions of the magnets 5 occupying the connecting rods, and when the magnets 5 are located at different positions on the flexible four-bar linkage 4, the displacement trail curves of the magnets 5 are different, and the generated magnetic fields are different. Due to the elastic properties of the flexible four-bar linkage 4, the position of the magnet 5 relative to the flexible four-bar linkage 4 changes slightly, resulting in a change in the magnetic field profile.

Therefore, the position and the motion track of the magnet 5 have certain randomness in the motion process, so that the periodic repeatability of the position of the magnetic field can be damaged, the magnetic field is in non-radial distribution, the uniformity of the magnetic field distribution can be improved, and the sputtering uniformity of the target material 8 and the utilization rate of the target material 8 are improved.

According to the magnetic field distribution uniformization device 100 for the magnetron sputtering process chamber, a group of magnets 5 are arranged on the four-bar mechanism, the four-bar mechanism is driven to rotate by the driving device 1, the magnets 5 are driven to move, the magnetic field distribution is in non-periodic and non-radial distribution, the magnetic field distribution uniformity can be improved, and the sputtering uniformity of the target material 8 and the utilization rate of the target material 8 can be improved.

According to some embodiments of the present invention, as shown in fig. 2 and 3, the four-link mechanism may include a first link 30, a second link 25, a third link 23, and a fourth link 28 connected in sequence. The first connecting rod 30 can be connected with the driving device 1, the driving device 1 can drive the first connecting rod 30 to rotate so as to drive the second connecting rod 25 to move, the first connecting rod 30 is rotatably connected with the driving device 1, and the magnet 5 can be arranged on the third connecting rod 23, so that the magnet 5 can move along with the movement of the third connecting rod 23, the second connecting rod 25 and the fourth connecting rod 28 can form a crank or a rocker, so that the third connecting rod 23 can do composite movement, and the magnet 5 can do irregular movement so as to improve the uniformity of a magnetic field.

That is, in the flexible link mechanism, the first link 30 is a frame, the second link 25 and the fourth link 28 are linking rods, the third link 23 can make a compound motion of translation and rotation, and further the magnet 5 can make an irregular motion, so that the magnetic field distribution is in an aperiodic and non-radial distribution.

Alternatively, the flexible four-bar linkages 4 may be provided individually or in pairs. When the flexible four-bar linkage 4 is light and small in size, the flexible four-bar linkage can be independently installed as shown in fig. 3, so that the flexible four-bar linkage is not only convenient to install, but also can reduce the cost; when the flexible four-bar linkage 4 has a large weight and a large size, it can be installed in pairs as shown in fig. 2 to balance the inertia force and ensure the controllability of the magnetic field strength and the magnetic field distribution.

Advantageously, as shown in fig. 1 and 5, the flexible four-bar linkage 4 may be sized much smaller than the cross-sectional diameter of the chamber. Therefore, on one hand, the flexible four-bar linkage mechanism 4 can obtain a large-range motion space, the randomness of the position and the motion track of the magnet 5 is improved, the diversity of the motion track of the magnet 5 is realized, the uniformity of magnetic field distribution is further improved, the sputtering uniformity of the target material 8 and the utilization rate of the target material 8 are improved, and on the other hand, the flexible four-bar linkage mechanism 4 can be simple and compact in structure and convenient to install.

Preferably, the four-bar linkage may be an integrally formed part, that is, the first link 30, the second link 25, the third link 23, and the fourth link 28 may be integrally formed, that is, the four links and the hinge may be combined into one member, so that the number of parts and the number of bearings may be reduced, the manufacturing process may be simplified, the assembly efficiency may be improved, and the contamination of parts and the maintenance cost may be reduced.

In particular, the four-bar linkage mechanism may have a flexible hinge, so that when the four-bar linkage mechanism moves, under the action of the flexible hinge, the position occupied by the magnet 5 may slightly change relative to the third link 23, so that the shape of the motion curve of the third link 23 may be changed, and the motion trajectory of the magnet 5 may be changed, i.e. the non-periodic change of the magnetic field may be implemented.

Here, it should be noted that the flexible hinge refers to a hinge having a certain deformation capability. Taking the first flexible hinge 24 between the second link 25 and the third link 23 as an example, when the second link 25 rotates, the first flexible hinge 24 can generate a rotation motion around its rotation center within a certain angle range under the action of a torsional load. Similarly, the third link 23 and the fourth link 28 are connected by a second flexible hinge 27. The flexible hinge has the advantages of no backlash, no friction, no clearance, no noise, no abrasion, small space size, high motion sensitivity, easy control, stable operation and the like, and two adjacent connecting rods are connected through the flexible hinge, so that the friction can be eliminated, the motion sensitivity is improved, and the uniformity of the magnetic field distribution is better.

Alternatively, as shown in fig. 2, the magnets 5 may be provided in two pairs, and the two pairs of magnets 5 may be spaced apart from each other, so that the third link 23 may be used to move the two magnets 5 to generate a magnetic field, such that the magnetic field is non-periodically and non-radially distributed. Alternatively, the magnets 5 may be three pairs, as shown in fig. 1 and 5, and the three pairs of magnets 5 may be disposed on the third connecting rod 23 at intervals, so that the uniformity of the magnetic field may be further improved, and the sputtering uniformity of the target 8 and the utilization rate of the target 8 may be improved. Of course, the structure of the present invention is not limited thereto, and the number of the magnets 5 is not limited to the above description, but may be other numbers, which will be understood by those skilled in the art and will not be described in detail herein.

In some embodiments of the present invention, as shown in fig. 1, the driving device 1 may be disposed above the housing, a mounting hole may be disposed on a top surface of the housing, the driving device 1 may be connected to a middle portion of the first connecting rod 30 through a rotating shaft 3 penetrating through the mounting hole, so that the driving device 1 may drive the rotating shaft 3 to rotate, and the rotating shaft 3 drives the first connecting rod 30 to rotate, so that the flexible four-bar linkage 4 realizes movement, and thus the magnet 5 may be driven to move, and the magnetic field may move in a range of 360 degrees.

Alternatively, the rotating shaft 3 may be a solid cylinder to improve the strength and reliability of the rotating shaft 3 and prolong the service life.

According to some embodiments of the invention, as shown in fig. 1, the spindle 3 may extend in an axial direction of the chamber, and the spindle 3 may be disposed non-coaxially with the chamber, in other words, the spindle 3 may extend downward through the housing, and the axial direction of the spindle 3 is not coincident with the axial direction of the chamber. Therefore, the rotating shaft 3 can be eccentrically arranged relative to the center of the cavity, the symmetry of the magnetic field is broken, the uniformity of the magnetic field distribution relative to the target 8 is increased, the material sputtering of the middle part of the target 8 is reduced, the material sputtering of the edge part of the target 8 is correspondingly increased, and the sputtering uniformity of the target 8 is improved.

Alternatively, the rotation speed of the rotating shaft 3 is adjustable, and the adjustment of the magnetic field can be realized by adjusting the rotation speed of the rotating shaft 3. For example, by adjusting the rotation speed and direction of the rotating shaft 3, different inertia forces can be obtained to adjust the magnetic field distribution, so that the flow field distribution in the chamber can be adjusted, the deposition (or etching) rate can be increased, and the sputtering efficiency can be increased.

In some embodiments, the drive means 1 may be an electric motor, with which the flexible four-bar linkage 4 is powered. In order to improve the stability of the motor, a motor bracket 2 may be disposed on the housing, as shown in fig. 1 and 5, the motor may be mounted on the motor bracket 2, so that the influence of the motor on the chamber during operation may be reduced, and the stability of the environment in the chamber may be improved.

As an alternative embodiment, the magnetic field distribution uniformizing apparatus 100 for a magnetron sputtering process chamber may further include a target runner 7 and a target driving apparatus 17. Specifically, as shown in fig. 1, the target 8 may be disposed on the target wheel 7 to drive the target 8 to move through the target wheel 7, and the target 8 may be disposed eccentrically to the target wheel 7, so that the target 8 may be eccentrically mounted in the chamber.

As shown in fig. 1, a target driving device 17 may be connected to the target wheel 7, and the target driving device 17 may drive the target wheel 7 to rotate so as to drive the target 8 to rotate eccentrically. That is, the target driving device 17 drives the target wheel 7 to rotate, and since the target 8 is eccentrically mounted on the target wheel 7, the target wheel 7 can drive the target 8 to eccentrically rotate when the target wheel 7 is driven to rotate by the target driving device 17. Thereby, the uniformity of sputtering can be further increased.

Further, as shown in fig. 1, a first gear 14 may be disposed between the target driving device 17 and the target wheel 7, gear teeth engaged with the first gear 14 may be disposed on an outer circumferential surface of the target wheel 7, and gear teeth engaged with the first gear 14 may be disposed on an outer circumferential surface of the target wheel 7, so that the target driving device 17 may drive the first gear 14 to rotate, and the gear teeth on the target wheel 7 are engaged with the first gear 14 to realize transmission, thereby realizing rotation of the target wheel 7 to drive the target 8 to move.

As shown in fig. 3, the upper surface of the target wheel 7 may be formed with an equal-diameter cam ring groove 34, and the target 8 may be mounted in the equal-diameter cam ring groove 34. It can be understood that the target wheel 7 can rotate around the geometric center O1 of the target wheel under the driving of the first gear 14, and at this time, the target 8 can rotate with the target wheel 7 in the equal-diameter cam ring groove 34, so as to achieve eccentric rotation, thereby further improving the sputtering uniformity of the target 8.

Wherein the position of the target 8 relative to the target wheel 7 is adjustable. Specifically, as shown in fig. 1 and 4, the magnetic field distribution uniformizing apparatus 100 may further include a target holder 6 and a wheel holder 16, the target holder 6 may be formed in a circular ring shape, the target holder 6 may be mounted in the equal-diameter cam ring groove 34, and the target 8 may be provided on the target holder 6. A wheel carrier 16 may be supported by the housing and the target wheel 7 may be mounted on the wheel carrier 16 by cross bearings 15 for rotation by a target drive arrangement 17. The upper surface of the target material rotating wheel 7 can be provided with a chute 32, a circular ring sliding block 22 is arranged in the chute 32, the circular ring sliding block 22 is made of antifriction materials, supports the upper end of the rotating wheel and reduces the friction between the rotating wheel and the rotating wheel support

Therefore, in the case of the scheme 1, when the runner 7 rotates, the upper equal-diameter cam rotates to push the target bracket 6 to move linearly along the runner support, so that the relative movement of the target 8 and the chamber position can be realized, and the magnetic field distribution periodicity and the radiancy can be reduced. In case of scheme 2, the relative position of the flexible four-bar linkage 4 with respect to the target 8 can be adjusted by rotating the wheel 7 so that the magnetic field traverses the surface of the target 8 approximately uniformly. It will be appreciated that the adjustment of the position of the target 8 may be continuous, periodic intermittent, or may be static, based on which uniform sputtering of the target 8 can be produced.

In other embodiments of the present invention, as shown in fig. 5, the magnetic field homogenizing device may further include a transmission connection assembly 43, the first link 30 may be connected to the transmission connection assembly 43, the driving device 1 may be disposed at one side of the housing, the driving device 1 may be located outside the chamber, and the driving device 1 may be connected to the transmission connection assembly 43 to rotate the four-bar linkage mechanism under the driving of the driving device 1. At this time, the driving device 1 drives the transmission connection assembly 43 to rotate, and the transmission connection assembly 43 drives the first link 30 to rotate, so that the rotation of the flexible four-bar linkage 4 can be realized.

As shown in fig. 5, the drive connection assembly 43 may include a second gear 58, a connecting runner 46, and a hollow annular connector 45. The driving device 1 can drive the second gear 58 to rotate, gear teeth matched with the second gear 58 can be arranged on the outer peripheral surface of the connecting rotating wheel 46, the second gear 58 can drive the connecting rotating wheel 46 to rotate, the hollow ring connecting piece 45 is adjustably arranged on the connecting rotating wheel 46, and two ends of the first connecting rod 30 can be arranged on the inner side surface of the hollow ring connecting piece 45 to realize rotation of the first connecting rod 30.

When the driving device 1 drives the second gear 58 to rotate, the second gear 58 is meshed with the gear teeth on the connecting rotating wheel 46 to be transmitted, the connecting rotating wheel 46 is driven to rotate, so that the hollow circular ring connecting piece 45 can rotate, in this way, the first connecting rod 30 connected with the hollow circular ring connecting piece 45 can move, under the action of inertia force, the second connecting rod 25 and the fourth connecting rod 28 connected with the first connecting rod 30 can rotate or swing, the third connecting rod 23 provided with the magnet 5 can realize compound movement, so that the magnet 5 can do rotating and translational compound movement along the surface of the target 8, an approximately uniform magnetic field is generated, and the sputtering uniformity of the target 8 and the utilization rate of the target 8 are improved.

Therefore, under the condition that the height of the cavity is not increased, the centralized distribution of the magnetic field in the middle of the target material 8 is reduced, the uneven sputtering of the target material 8 is reduced, and the phenomenon that the temperature of the middle of the target material 8 is too high due to the centralized sputtering can be avoided.

As an alternative embodiment, the first link 30 may include a first segment 301 and a second segment 302 disposed at a distance, as shown in fig. 6, one end (e.g., a right end shown in fig. 6) of the first segment 301 adjacent to the second segment 302 may be connected to the second link 25, and one end (e.g., a left end shown in fig. 6) of the second link 25 adjacent to the first segment 301 may be connected to the fourth link 28. It can be understood that the end of the first link 30 away from the second link 25 (i.e., the left end shown in fig. 6) and the end of the second link 25 away from the first link 30 (i.e., the right end shown in fig. 6) both stop against the inner side of the hollow ring connector 45, so that when the hollow ring connector 45 rotates, the first link 30 can be driven to move, the movement of the flexible four-bar linkage 4 is realized, and the magnet 5 is driven to move, and a magnetic field is generated.

Advantageously, the hollow annular connecting element 45 can be arranged eccentrically with respect to the connecting wheel 46. In other words, the geometric center of the hollow annular connector 45 is not coincident with the geometric center of the connecting runner 46. Thereby, an eccentric arrangement of the flexible four-bar linkage 4 can be achieved. Specifically, when the connecting runner 46 rotates around the geometric center thereof, the hollow circular connecting piece 45 can realize eccentric rotation, so that the uniformity of magnetic field distribution can be broken, the concentrated distribution of the magnetic field in the middle of the target 8 can be reduced, the purpose of improving the uniformity of the magnetic field traversing the surface area of the target 8 can be achieved, and the sputtering uniformity of the target 8 and the utilization rate of the target 8 can be further improved.

In some embodiments, the backside of the target 8 (i.e., above as shown in fig. 5) may be provided with a cooling system to reduce the temperature rise during sputtering. Because the back of the target material 8 is not blocked, the back of the target material 8 is provided with a cooling system, so that the method is convenient, and the reliability and the stability are high, thereby reducing the temperature of the target material 8 and further improving the sputtering uniformity and the deposition rate of the target material 8.

According to some embodiments of the present invention, as shown in fig. 1 and 5, an elevator mechanism 10 for elevating a substrate may be provided in the chamber, and a substrate support table assembly 9 may be mounted on top of the elevator mechanism 10, and the substrate is provided on the substrate support table assembly 9. The movement of the lifting mechanism 10 is controlled to enable the substrate supporting table assembly 9 to move up and down, so that the position of the substrate can be controlled, and the up-and-down adjustment of the substrate can be realized.

According to some embodiments of the present invention, the housing may include a lower housing 55 and an upper housing 11, as shown in fig. 1 and 5, the lower housing 55 may define a lower chamber 19 therein, the substrate may be located in the lower chamber 19, the upper housing 11 may be disposed on the lower housing 55, the upper housing 11 may define an upper chamber 12 therein, the upper chamber 12 and the lower chamber 19 may together define a chamber, and the four-bar linkage may be located in the upper chamber 12. Therefore, the shell is simple and compact in structure, convenient to process and capable of reducing cost to a certain extent.

As shown in fig. 1 and 5, the inner liner 20 may be disposed in the lower chamber 19, the inner liner 20 may be formed as a hollow circular tube, the bottom of the inner liner 20 is supported on the bottom wall of the lower housing 55, and the inner liner 20 may extend upward, and the substrate may be disposed inside the inner liner 20, so that the substrate, the lower housing 55, and the like may be protected by the inner liner 20.

In order to ensure the normal operation of the magnetron sputtering in the chamber, the chamber needs to be sealed, and the chamber needs to be vacuumized during the magnetron sputtering, so as to reduce the influence of the outside on the sputtering process. Specifically, in the embodiment shown in fig. 1, sealing rings 13 may be disposed between the upper housing 11 and the transmission connection assembly 43 and between the transmission connection assembly 43 and the lower housing 55, and in the embodiment shown in fig. 5, sealing rings 13 may be disposed between the upper housing 11 and the connecting runner 46 and between the connecting runner 46 and the lower housing 55. And the bottom of the lower shell 55 can be provided with a vacuum pumping assembly 21 to pump out the air in the chamber, so that the vacuum environment can be maintained in the chamber, and the smooth operation of the magnetron sputtering can be ensured.

Preferably, as shown in fig. 1 and 3, the upper surface of the target wheel 7 may be provided with a sealing groove 33, and a part of the sealing ring 13 may be accommodated in the sealing groove 33, so that the sealing ring 13 may be prevented from being dislocated, and good sealing is ensured.

In some embodiments, the flexible four-bar linkage 4 may be sized to swing within a certain range, and the flexible hinge may be made of a composite material, a multifunctional material, a gradient material, or the like, and the elastic deformation range of the flexible hinge may be set, while the micro-swing of the flexible hinge may be achieved using a piezoelectric material. In addition, the movement locus of the magnet 5 can be regulated by setting the size parameters of the flexible four-bar linkage 4 and the installation position of the group of magnets 5, the inertia force can be controlled by setting the mass distribution of the flexible four-bar linkage 4 and the magnet 5 and the rotating speed of the rotating shaft 3, different swing ranges and speeds can be obtained, the magnetic field distribution is in non-periodic and non-radial distribution, and the sputtering uniformity of the target material 8 and the utilization rate of the target material 8 are improved. The size of the flexible four-bar linkage 4 and the control of the mounting position of the magnet 5 may be adaptively set according to the use requirement, and the present invention is not particularly limited.

The force and movement of the flexible four-bar linkage 4 will be described in detail below with reference to fig. 2 and 7.

In the example shown in fig. 2, the flexible four-bar linkage 4 includes a first bar 30, a second bar 25, a third bar 23 and a fourth bar 28 connected in sequence, wherein the middle of the first bar 30 is connected to the rotating shaft 3, three pairs of spaced magnets 5 are disposed on the third bar 23, the first bar 30 and the second bar 25 are hinged by a first fixed hinge 26, the first bar 30 and the fourth bar 28 are hinged by a second fixed hinge 29, and two ends of the third bar 23 are hinged to the second bar 25 and the fourth bar 28 by a first flexible hinge 24 and a second flexible hinge 27, respectively.

In order to balance the inertia forces, the flexible four-bar linkage 4 comprises two, as shown in fig. 2, the two flexible four-bar linkages 4 are centrosymmetric, and the first links 30 of the two flexible four-bar linkages 4 coincide.

When the driving device 1 drives the rotating shaft 3 to rotate, the rotating shaft 3 drives the flexible four-bar linkage mechanism 4 to rotate, the flexible four-bar linkage mechanism motion space I is shown as a circle shown by a dotted line in fig. 2, and a curve omega with an arrow in fig. 2 shows the rotation direction of the flexible four-bar linkage mechanism 4. Meanwhile, the second link 25, the third link 23 and the fourth link 28 move relative to the first link 30 by the inertial force, specifically, the inertial force of the second link 25 is shown as a straight line F11 with an arrow in fig. 2, and F13 shows the inertial force of the fourth link 28.

It will be appreciated that the inertial force of the other, mounted in pairs with one flexible four-bar linkage 4, is equal and opposite to the inertial force of the aforementioned flexible four-bar linkage 4.

In the example shown in fig. 2, the length of the second link 25 is greater than the length of the fourth link 28. Under the action of inertia force, the fourth link 28 rotates around the first fixed hinge 26, and the second link 25 swings around the second fixed hinge 29 within a certain angle range, so that the third link 23 performs a compound motion of translation and rotation. Therefore, the magnet 5 can do compound movement relative to the target 8, so that the magnetic field near the target 8 is distributed in a low-period and non-radiative manner, the purpose that the magnetic field approximately and uniformly traverses the surface of the target 8 is achieved, and the sputtering uniformity of the target 8 and the utilization rate of the target 8 can be improved.

During the movement, the inertia force of the flexible four-bar linkage 4 is instantaneously changed. In the example shown in fig. 7, the inertial force experienced by the second link centroid 65 is denoted as F11, the inertial force experienced by the fourth link centroid 66 is denoted as F13, the instantaneous velocity of the third link centroid 67 is shown by the line with the solid arrow in fig. 7, and in the position shown, the third link instantaneous center of rotation P is shown in fig. 7.

The elasticity of the flexible hinge is also one of the main factors influencing the swing amplitude of the flexible four-bar linkage 4, and the motion track of the magnet 5 is related to the position of the magnet 5 occupying the link, and different displacement track curves can be generated by the magnets 5 at different positions. Due to the elastic property of the flexible hinge, the position of the magnet 5 relative to the first link 30 may be slightly changed, so that the motion curve of the third link 23 may be changed.

Under the combined action of the above factors, the motion trail of the position point of the magnet 5 has certain randomness in the motion process, so that the periodic repeatability of the position of the magnetic field is destroyed, and the magnetic field can be more uniform.

The effect of the length change of each bar of the flexible four-bar linkage 4 on the motion characteristics of the flexible four-bar linkage 4 will be briefly described with reference to fig. 8 to 13.

The relative lengths of the four links in the flexible four-bar linkage mechanism 4 are changed, the motion characteristics of the flexible four-bar linkage mechanism 4 are different, and the curve shapes of different position points on the same link are different. In order to overcome the radial distribution of the magnetic field generated by the rotation motion, the link (i.e., the third link 23) where the magnet 5 is located can be linearly swept over the surface of the target 8, so that the uneven sputtering of the target 8 caused by the radial distribution of the magnetic field can be reduced.

As shown in fig. 8, 9 and 10, when the flexible four-bar linkage 4 is a double-rocker linkage, the second link 25 and the fourth link 28 swing within a certain angle range, and the movement locus of the magnet 5 is distributed on the outer edge of the target 8. When the target 8 is positioned at a large eccentricity, the magnetic field may traverse the surface of the target 8, thereby allowing the magnetic field to be non-radially distributed.

To enhance the plasma density near the target 8, a flexible double rocker mechanism may be mounted in pairs on the shaft 3. Specifically, the flexible double-rocker mechanisms installed in pairs are formed by two flexible four-link mechanisms 4 arranged in central symmetry, and each flexible four-link mechanism 4 is a double-rocker mechanism. Two flexible four-bar linkages 4, which are installed in pairs, have been described in detail above and will not be described in detail here.

As shown in fig. 11 and 12, when the flexible four-bar linkage 4 is a crank-rocker mechanism, the flexible four-bar linkage 4 can theoretically make a complete revolution, but since the flexible four-bar linkage 4 only relies on inertia force as a driving force, the second link 25 and the fourth link 28 can only swing within a certain range.

When the flexibility of the flexible hinge is larger, the swing angle of the second link 25 and the fourth link 28 is larger, and conversely, the swing angle of the second link 25 and the fourth link 28 is smaller.

The structure can be obtained by reasonably designing the rod length of the flexible four-bar linkage mechanism 4 and the elasticity of the flexible hinge, wherein the third connecting rod 23 sweeps the surface of the target material 8 in an approximately parallel straight line, which is beneficial to the uniform distribution of the magnetic field, thereby obtaining the uniform sputtering of the target material 8. When the flexible four-bar linkage 4 can obtain a position in which the third connecting bar 23 can sweep the outer edge and the central position of the target 8 in sequence, and the target 8 with continuously changed positions is matched, a better uniform sputtering effect of the target 8 can be obtained.

As shown in fig. 13, when the flexible four-bar linkage 4 is a dual-crank mechanism, the third connecting bar 23 sweeps across the surface of the target 8 in parallel straight lines, so that the magnetic field can be uniformly distributed, and a better uniform sputtering of the target 8 can be obtained.

In summary, according to the magnetic field distribution uniformizing apparatus 100 for the magnetron sputtering process chamber in the embodiment of the invention, the group of magnets 5 is mounted on the four-bar linkage, the driving device 1 drives the four-bar linkage to rotate, so as to drive the group of magnets 5 to move, and the position of the group of magnets 5 is changed by the rotation of the rotating shaft 3, so that the magnetic field moves in a range of 360 degrees; the rotating shaft 3 is eccentrically arranged relative to the cavity, so that the symmetry of a magnetic field is broken, the uniformity of the magnetic field distribution relative to the target 8 is increased, the material sputtering in the middle of the target 8 is reduced, and the material sputtering at the edge part of the target 8 is correspondingly increased; by utilizing the curve characteristic of a connecting rod of a four-bar mechanism, a group of magnets 5 are arranged on the connecting rod, the motion trail diversity of the group of magnets 5 is realized, the non-radiative magnetic field distribution is formed, and the sputtering uniformity of the target material 8 is improved; the swing range of the flexible four-bar linkage mechanism 4 is controlled by designing and controlling the elasticity of the flexible hinge of the flexible four-bar linkage mechanism 4, so that the distribution of a magnetic field is controlled; by utilizing the flexible hinge of the flexible four-bar linkage mechanism 4, the four bar pieces and the bearing components of the flexible four-bar linkage mechanism 4 are combined into one component, so that the number of parts and the number of bearings of the mechanism are reduced, and the pollution and maintenance of the parts are reduced; the magnets 5 are arranged on the flexible four-bar linkage mechanism 4, so that the mass of the linkage is increased, the inertia force generated by a group of magnets 5 and the mass of the linkage is used as the driving force of the flexible four-bar linkage mechanism 4, the flexible four-bar linkage mechanism 4 swings in a certain range, the driving devices 1 of the four-bar linkage mechanism are reduced, and the movement without a driving source is realized; different inertia forces are obtained by adjusting the speed and the direction of the rotating shaft 3 to adjust the magnetic field distribution, so that the flow field distribution in the cavity is adjusted, and the deposition (or etching) rate is improved; the magnetron motion driving device 1 is arranged on the side surface of the chamber by arranging the driving device 1 and the second gear 58 on the side surface of the chamber, and the connection rotating wheel 46 is connected with the first connecting rod 30 to realize the centering or eccentric installation of the flexible four-bar linkage mechanism 4 so as to increase the sputtering uniformity; the eccentric position of the target material 8 can be adjusted by adjusting the rotating angle of the hollow circular ring connecting piece 45 through the constant-diameter cam mechanism; and a cooling system is arranged between the target material 8 and the flexible four-bar linkage mechanism 4, so that the temperature of the target material 8 can be reduced.

In short, the magnetic field distribution homogenizing device 100 for the magnetron sputtering process chamber according to the embodiment of the invention can make the magnetic field distribution non-periodically and non-radially distributed, so as to improve the uniformity of the magnetic field distribution, and further improve the sputtering uniformity of the target 8 and the utilization rate of the target 8.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like are used in the orientations and positional relationships indicated in the drawings, which are used for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, or may be connected internally or through an interaction of two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.

Although embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are illustrative and not restrictive, and that those skilled in the art may make changes, modifications, substitutions and alterations to the above embodiments without departing from the scope of the present invention.

Claims

1. A magnetic field distribution uniformization device for a magnetron sputtering process chamber is characterized by comprising:

a housing defining a vacuum chamber therein,

a lifting mechanism (10) arranged in the vacuum chamber and used for lifting the substrate,

a rotating shaft (3),

a driving device (1) for driving the rotating shaft (3) to rotate,

the flexible four-bar mechanism comprises a rack, a connecting rod and a flexible hinge, and is arranged in the cavity and above the target, wherein: the flexible four-bar mechanism is connected with the rotating shaft (3), when the driving device (1) drives the rotating shaft (3) to rotate, the rotating shaft (3) drives the flexible four-bar mechanism (4) to rotate,

a group of magnets are arranged in the magnetic field,

a substrate support table assembly (9) disposed on top of the elevating mechanism for positioning the substrate on the substrate support table assembly (9),

a magnetron positioned at an upper portion of the target,

at least one flexible four-bar linkage mounted on the rotor,

a group of magnets are arranged on the connecting rod,

the mounting position of the rotor is one selected from:

the top of the vacuum chamber, and

the side surface of the vacuum chamber,

the rotor is mounted asymmetrically with respect to the target and the chamber,

a set of magnets mounted on the connecting rod,

target runner (7), target bracket (6), runner bracket (16), constant diameter cam ring groove (34), target drive arrangement (17), wherein:

the constant diameter cam ring groove (34) is formed on the upper surface of the target rotating wheel (7),

the target material rotating wheel (7) is used for driving the target material (8) to rotate,

the target material bracket (6) is in a ring shape,

the target bracket (6) is arranged in the equal-diameter cam ring groove (34),

the target (8) is arranged on the target bracket (6),

a wheel carrier (16) is supported by the housing,

the target wheel (7) is arranged on a wheel bracket (16) through a cross bearing (15) to be driven by a target driving device (17) to realize rotation,

2. The magnetic field distribution uniformizing apparatus for the magnetron sputtering process chamber as claimed in claim 1, wherein:

a first gear (14) is arranged between the target driving device (17) and the target rotating wheel (7), gear teeth matched with the first gear (14) are arranged on the peripheral surface of the target rotating wheel (7), so that the target driving device (17) drives the first gear (14) to rotate,

the gear teeth on the target rotating wheel (7) are meshed with the first gear (14), so that the target rotating wheel (7) rotates.

3. The magnetic field distribution uniformizing apparatus for the magnetron sputtering process chamber as claimed in claim 1, wherein:

the upper surface of the target rotating wheel (7) can be provided with a sliding chute (32), a circular ring sliding block (22) is arranged in the sliding chute (32), and the circular ring sliding block (22) is made of an antifriction material, supports the upper end of the rotating wheel and reduces the friction between the rotating wheel and the rotating wheel support.

4. The magnetic field distribution uniformizing apparatus for the magnetron sputtering process chamber as claimed in claim 1, wherein the flexible four-bar mechanism is an integrally formed piece, and the flexible hinge is implemented by a gradient material and a specific aspect ratio.

5. The magnetic field distribution uniformizing apparatus for use in the magnetron sputtering process chamber as claimed in any one of claims 1 to 4, wherein the magnets are arranged with at least two pairs of S and N poles being spaced apart.

6. The magnetic field distribution uniformizing apparatus for the magnetron sputtering process chamber as claimed in claim 1, wherein the housing comprises:

a lower housing defining a lower chamber therein, the substrate being located within the lower chamber;

the upper shell is arranged on the lower shell, an upper cavity is defined in the upper shell, the upper cavity and the lower cavity define the cavity together, and the four-bar mechanism is located in the upper cavity.