KR101913791B1 - Target arrangement, processing apparatus therewith and manufacturing method thereof - Google Patents

Target arrangement, processing apparatus therewith and manufacturing method thereof Download PDF

Info

Publication number
KR101913791B1
KR101913791B1 KR1020177005049A KR20177005049A KR101913791B1 KR 101913791 B1 KR101913791 B1 KR 101913791B1 KR 1020177005049 A KR1020177005049 A KR 1020177005049A KR 20177005049 A KR20177005049 A KR 20177005049A KR 101913791 B1 KR101913791 B1 KR 101913791B1
Authority
KR
South Korea
Prior art keywords
target
support
arrangement
processing device
processing
Prior art date
Application number
KR1020177005049A
Other languages
Korean (ko)
Other versions
KR20170039218A (en
Inventor
프랑크 슈나펜베르거
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20170039218A publication Critical patent/KR20170039218A/en
Application granted granted Critical
Publication of KR101913791B1 publication Critical patent/KR101913791B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Abstract

A target arrangement 100 (101; 102; 103; 104; 106) for a processing device 105 (107) is described. The target arrangement includes a target support 110 configured to support a non-planar target material 120 and the target support 110 includes a vacuum side 130 and an atmosphere side 140. Further, a processing apparatus made for target arrangement and a method for manufacturing target arrangement are described.

Description

TECHNICAL FIELD [0001] The present invention relates to a target arrangement, a processing apparatus having the same, and a method of manufacturing the same. [0002] TARGET ARRANGEMENT, PROCESSING APPARATUS THEREWITH AND MANUFACTURING METHOD THEREOF [

[0001] Embodiments of the present invention relate to a processing apparatus having a target arrangement and a target arrangement. Embodiments of the present invention are particularly directed to a vacuum processing apparatus having a target arrangement and a target arrangement for a vacuum processing apparatus, and more particularly to a sputtering apparatus having a target arrangement and a target arrangement for a sputtering apparatus. Embodiments also relate to a method for manufacturing a target apparatus for a processing apparatus, and more particularly, a vacuum processing apparatus.

[0002] In many applications, layers are deposited on a substrate, for example, thin layers are deposited on a glass substrate. The substrates are often coated in different chambers of the coating apparatus. The substrates can be coated in vacuum.

[0003] Several methods for depositing material on a substrate are known. For example, the substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or a plasma enhanced chemical vapor deposition (PECVD) process, The process is performed in a processing chamber or processing apparatus where the substrate to be coated is located. A deposition material is provided in the apparatus. Oxides, nitrides, or carbides of such materials as well as a plurality of materials can be used for deposition on a substrate. Coated substrates can be used in a variety of applications and in various technology fields. For example, substrates for displays are usually coated by a physical vapor deposition (PVD) process. Additional applications include insulating panels, organic light emitting diode (OLED) panels, substrates with thin film transistors (TFT), or color filters, and the like.

[0004] In the case of a PVD process, the deposition material may be present in the target in a solid state. The atoms of the target material, i.e., the material to be deposited, are released from the target by bombarding the target with energetic particles. The atoms of the target material are deposited on the substrate to be coated. In a PVD process, the sputter material, that is, the material to be deposited on the substrate, can be arranged in various ways. For example, the target may be made of the material to be deposited, or the backing element - the material to be deposited may be fixed on the backing element. A target comprising a material to be deposited is fixed or supported in a predefined position in the deposition chamber. When a rotatable target is used, the target is connected to a rotating shaft, or to a connecting element connecting the shaft and the target.

[0005] For example, to reduce deposition system idle time, an easy and quick mounting of targets in the chamber is required. Using rotatable targets is beneficial for layer uniformity; However, mounting rotatable targets is accomplished by accessing the processing chamber, which is time-consuming. In view of the foregoing, it is an object of the present invention to provide a target arrangement, a processing apparatus with target arrangement, and a method for manufacturing target arrangement, which overcomes at least some of the problems in the art.

[0006] In view of the above, a method for manufacturing a target arrangement, a processing chamber, and a target arrangement according to independent claims is provided. Further aspects, advantages, and features of the present invention are apparent from the dependent claims, the detailed description, and the accompanying drawings.

[0007] According to one embodiment, a target arrangement for a processing device is provided. The target arrangement includes a target support configured to support a non-planar target material. The target support includes a vacuum side and an atmospheric side.

[0008] According to another embodiment, a processing apparatus for processing a substrate is provided. The processing apparatus includes a processing chamber having an exterior and an interior, wherein the processing chamber is configured to house a substrate support for the substrate to be processed and the substrate during processing. The processing chamber is adapted to receive a target arrangement according to the embodiments described herein.

[0009] According to a further embodiment, a method is provided for manufacturing a target arrangement to be used in a processing device. The method includes forming a target support configured to support a non-planar target material, wherein the target support includes a vacuum side and an atmospheric side. The method further comprises the step of providing a target material on a target support, wherein the target material is at least one of a bent surface, in particular a circular, elliptical, or parabolic arc Shaped surface.

[0010] Embodiments also relate to devices for performing the disclosed methods and include device parts for performing each of the described method steps. These method steps may be performed by hardware components, by a computer programmed by appropriate software, by any combination of the two, or in any other manner. In addition, embodiments in accordance with the present invention also relate to methods of operating the described apparatus. The method includes method steps for performing all functions of the device.

[0011] In the manner in which the above-recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the present invention and are described below:
1A shows a schematic diagram of a target arrangement according to embodiments described herein;
Figure 1B shows a schematic diagram of target arrangement according to embodiments described herein;
1C shows a schematic diagram of target arrangement according to embodiments described herein;
1D shows a schematic view of the rear side of the target arrangement according to the embodiments described herein;
Figure 2 shows a schematic diagram of target arrangement according to embodiments described herein;
Figure 3a shows a schematic view of a target arrangement with a magnet assembly, according to embodiments described herein;
Figure 3B shows an enlarged view of the section of the target arrangement shown in Figure 3A;
Figures 4A-4C show schematic views of portions of target arrangement according to embodiments described herein;
5A shows a schematic diagram of a processing device including target arrangement according to embodiments described herein;
Figure 5b shows a schematic diagram of a side view of the processing apparatus shown in Figure 5a;
Figure 5c shows a schematic cross-sectional view of the processing apparatus of Figure 5a along line AA;
Figure 5d shows a schematic view of a rear view of the processing apparatus shown in Figure 5a;
Figure 6 shows a schematic diagram of a processing device including target arrangement according to embodiments described herein;
Figure 7 shows a flow diagram of a method for manufacturing a target arrangement according to embodiments described herein.

[0012] Reference will now be made in detail to the various embodiments of the invention, examples of which are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. In general, only differences for the individual embodiments are described. Each example is provided as an illustration of the invention and is not intended as a limitation of the invention. Further, the features illustrated or described as part of one embodiment may be used with other embodiments, or may be used for other embodiments, to create further embodiments. The detailed description is intended to cover such modifications and variations.

[0013] Further, in the following description, the target support portion can be understood as a device for supporting a target material in, for example, a sputter deposition process. In some embodiments, the target support may include at least a portion or side that does not undergo a sputtering process, e.g., a non-sputtered portion. For example, a portion of the target support can be made not to wear or to remove during the deposition process. In some embodiments, the target support may be connectable to a wall of a processing chamber, e.g., a sputter chamber. According to some embodiments, the target support may comprise or be made from a target material.

[0014] According to embodiments described herein, the target support may include an atmospheric side and a vacuum side. In particular, the vacuum side of the target support may be formed by, for example, selecting materials each (e.g., by selecting a material having an outgassing rate suitable for a vacuum process, a suitable temperature resistance, Can be made to be used in a vacuum process. In some embodiments, the atmosphere side of the target support may be configured to be used under atmospheric conditions, for example, at a pressure of about 1 bar, a temperature range of 0 to 40 degrees, and so on. According to some embodiments, the atmosphere side of the target support can be made to be provided outside the processing chamber, and the vacuum side of the target support can be made to be provided inside the processing chamber. According to some embodiments, the target support comprises a plurality of coupling means, such as a target support, for providing the atmospheric side of the target support to the outside of the chamber and the vacuum side of the target support to the interior of the chamber, The connection means can be provided.

[0015] According to the embodiments described herein, an arc as referred to herein may be understood as a portion or segment of a geometric shape, for example, an arc is a segment of a circle, an arc is a segment of an ellipse , A parabola arc is a segment of a parabola, and so on. According to some embodiments, the arc may be a segment encircling an angle of less than 360 degrees. For example, the length of the arc is

Figure 112017018435698-pct00001
, Where R is the radius of the circle,
Figure 112017018435698-pct00002
Is the angle enclosed by the circle segment and is less than 360 degrees.

[0016] As used herein, the term "non-planar" should be understood as having a curvature, for example, a non-planar surface has a curvature over at least a portion of the surface. According to some embodiments, a curved surface can be described as being a curved surface.

[0017] In known systems, two types of sputtering targets are used, namely planar sputtering targets and rotary sputtering target assemblies. Both planar and rotary sputtering target assemblies have their advantages. Due to the design and geometry of the cathodes, rotatable targets typically have higher utilization and increased operating time than planar targets. Rotary sputtering target assemblies can be particularly beneficial in large area substrate processing. Bonding the cylindrical target tube to the backing tube is a challenge in the manufacture of rotary target assemblies. Bonding the cylindrical target tube to the backing tube is particularly difficult in the case of large target materials. In the manufacture of such rotatable sputtering cathodes, the target material may be applied, for example, by spraying, casting, or pressing the powder onto the outer surface of the backing tube. Alternatively, a hollow cylinder of target material, which may also be referred to as a target tube, is arranged on the backing tube to form a rotatable target and can be bonded to the backing tube, for example, using indium have. However, due to the geometry of the rotatable targets and in order to enable the above-mentioned higher target utilization, the rotatable targets are provided completely in vacuum conditions during use of the rotatable targets in the processing chamber for processing substrates .

[0018] The embodiments described herein provide a target arrangement for a processing device. The target arrangement includes a target support configured to support a non-planar target material. The target support includes a vacuum side and an atmospheric side.

[0019] Targeting in accordance with the embodiments described herein aids in facilitating the manufacturing process of the target as will be described in detail below. In addition, target arrangements in accordance with the embodiments described herein can be mounted in a processing chamber in an easy and cost-effective manner, since non-planar targets can be mounted in or on a chamber door or wall, For example, from the outside of the processing chamber.

[0020] FIG. 1A illustrates a target arrangement according to embodiments described herein. The target arrangement 100 includes a target support 110 and a target material 120. The target support 110 is configured to support the non-planar target material 120. 1A, a target support 110 includes a plate-like base 111, a side support 112 extending along the length of the target 120, And a front support portion 113 for supporting a front end portion of the front support portion 120. According to some embodiments described herein, the terms "target" and "target material" are used synonymously herein.

[0021] According to some embodiments, at least a portion of the target support can provide a non-planar shape, e.g., a non-planar shape corresponding to a non-planar shape of the target material to be supported by the target support. For example, the embodiment of FIG. 1A illustrates a front support portion 113 having a shape of a arc corresponding to the shape of the target 120. FIG. In some embodiments, the target support may have a semi-cylindrical tube that is divided along its length, for example, a portion having the shape of a backing half tube. For example, a semi-cylindrical tube may have a cross-section of the shape of a circular arc that encloses an angle of about 180 degrees.

As can be seen in FIG. 1A, a target support 110 provides a vacuum side 130 and an atmosphere side 140. Typically, the vacuum side may be the side of the target, which is present in the processing chamber when the target arrangement is mounted in the processing chamber. The atmospheric side of the target support may be provided outside the processing chamber when the target arrangement is mounted to the processing chamber (or at least may be accessible from outside the processing chamber). According to some embodiments, the atmospheric side of the target support may be directed to the exterior of the processing chamber, for example, when the target arrangement according to the embodiments described herein is mounted to the processing chamber wall. According to some embodiments, the target arrangement may also be described as having a vacuum side and an atmosphere side comprising a target material.

[0023] FIG. 1B shows an embodiment of a target arrangement 101. The target arrangement 101 includes a target support 110 that includes a support plate 114. The non-planar target 120 may be provided on the support plate 114 of the target support 110. According to some embodiments, the target support may include a semi-cylindrical tube, e.g., a backing half tube, over which a target material 120 is provided. According to alternative embodiments, a target support base, such as a support plate, supports a target material having the shape of a semi-cylindrical tube, without a backing half tube. 1B shows the semicylindrical tube closed at the ends of the semicylindrical tube, but in some embodiments the front end of the semicylindrical tube can be opened. The target support 110 shown in FIG. 1B provides a vacuum side 130 and an atmospheric side 140. As will be described in detail with reference to FIG. 1d, the target support may include a hollow portion at the atmosphere side of the target support. According to some embodiments, the hollow portion may be provided by a hole in the plate-shaped base of the target support (e.g., the support plate of Figure 1B), or may be provided by a frame as a target support.

[0024] The target material of the embodiments described herein can be bonded to the target support in an easy and reliable manner. The non-planar shape of the target material, illustratively shown as an arc in the figures, allows the use of forces in the bonding process that are greater than the forces that can be used when the rotatable target is produced.

[0025] FIG. 1C illustrates an embodiment of a target arrangement 102. The target arrangement 102 includes a target 120 and a target support 110 formed in a one-piece target arrangement. For example, the target support can be made of a target material. According to some embodiments, the target support 110 (particularly the portion that is not sputtered in the process) comprises a plate-like structure and the non-planar target 120 extends therefrom.

[0026] According to some embodiments, the atmospheric side of the target support may be provided by one or more sections of the target support, as exemplarily shown in the embodiments shown in the figures. For example, the atmospheric side of the target support may include a plate-like portion as exemplarily shown in Fig. 1A, a frame-like portion as illustrated exemplarily in Fig. 1B, parts of a side support as described above, The back side of the plate-like portion, or the back side of the frame, the back side of the target support made of a target material, as exemplarily shown in Fig. 1C, and the like. In some embodiments, the atmosphere side may be a portion or surface of a target support having a defined thickness, particularly a thickness that does not change during the process. In some embodiments, the atmosphere side of the target support may be described as the surface of the target support, which is not directed into the interior of the processing chamber. In one example, the atmosphere side may be external to the processing chamber wall or may be extended. According to some embodiments, the atmospheric side may include a space, which may in particular reach the back side of the target (e.g., the side of the target, not facing the processing chamber). According to some embodiments, the vacuum side of the target support extends into the interior of the processing chamber, for example, by extending from the processing chamber wall or even with the processing chamber wall on the side facing the interior of the processing chamber .

[0027] FIG. 1d shows a rear view of a target support 110 in accordance with the embodiments described herein. The target support 110 may be a target support of any of the embodiments described, such as the target support shown in Figs. 1A-1C. According to some embodiments, the back view of the target support can be represented in the drawing on the atmosphere side of the target support. In some embodiments, the target support 110 configured for a non-planar target may include, for example, a hollow section 115 for allowing access to a non-planar target material, Sections, or a frame on which the target material can be bonded, and the like. According to some embodiments, the hollow section may allow access to the target material and / or the non-planar (or curved) surface of the target support. In some embodiments, the hollow section may allow access by an opening in the target support, e.g., a substantially rectangular opening in the support plate of the target support. According to some embodiments, the openings may have any suitable shape.

[0028] According to some embodiments, a target support configured for a non-planar target may be configured to be bonded to a target support, for example, to process conditions (including pressure, temperature, gas or plasma presence, etc.) To allow the target material to be bonded to the target support in a reliable manner. For example, the target support may be provided at least partially, such as one side, in a processing chamber having a pressure of about 5 * 10 -4 to about 5 * 10 -2 mbar, for example, a pressure of about 5 * 10 -3 can do. According to some embodiments, the process temperature or processing chamber temperature at which target arrangement can be used can be up to 600 ° C. The target support may be adapted to withstand process temperatures. In some embodiments, the surface of the target support can be made to provide sufficient bonding between the target material and the target support. For example, the target support surface may provide suitable roughness, suitable thermal conductivity, sufficient bonding area, and the like.

[0029] In some embodiments, the target support configured for a non-planar target may be further configured to provide a magnet assembly for acting as a magnetron for a non-planar target. For example, the target support may provide or allow space for at least partially housing a magnet assembly, such as a magnetron for sputtering of target material. In some embodiments, the target support configured for the non-planar target includes connecting elements for coupling the magnet assembly for sputtering of the non-planar target, such as clamps, holes, bores, bars, bolts, frames, and the like.

[0030] FIG. 2 shows an embodiment of a target arrangement 103 in the field of view showing the atmosphere side of the target support 110. The hollow section 115 of the target support 110 can be seen in FIG. Figure 2 shows the contour 116 of a non-planar target that is bonded to a target support 110. Alternatively, contour 116 may belong to a part of the target support having a semi-cylindrical tube shape and may be configured to provide a target material on the target support. The hollow section 115 of the target support 110 allows access to each part or non-planar target of the target support. According to some embodiments, the target support 110 is configured to at least partially housing the magnet assembly 117. In the embodiment shown in FIG. 2, the hollow section 115 allows housing magnet assembly 117 at least partially at the target support. The target support may include connecting means 121 for connecting the magnet assembly 117 to the target support. In one embodiment, the magnet assembly is rotatable about an axis that is rotatable, and in particular, substantially parallel to the longitudinal axis of the non-planar target.

[0031] According to some embodiments described herein, a magnet assembly includes a magnet element having a yoke yoke having two poles of opposite polarity. For example, one of the stimuli may surround other stimuli and form a racetrack. According to some embodiments, the magnet element includes a base for supporting a magnet yoke with poles. In some embodiments, the magnet assembly may oscillate between two positions about an axis of rotation, for example, by wobbling behind a backing tube. According to some embodiments, the magnet assembly can be driven by a motor and wobbled behind a half backing tube. The magnet assemblies can be configured for rotational movement at angles of at least 30 [deg.], For example, by being mounted, respectively. In particular, the magnet assembly can be configured to perform rotational motion along the arc, particularly along a arc corresponding to the shape of the non-planar target material. Additional embodiments may include a static magnet bar or a magnetic coil.

[0032] According to some embodiments, the target arrangement includes a lifting device for maintaining the distance between the magnet element and the target surface (eg, the target surface facing the substrate to be processed) constant, particularly during deposition can do. For example, the target arrangement may include a mechanical gear or eccentric device that is driven by a drive element, such as a motor, to move the magnet assembly toward or away from the non-planar target surface. have. In one embodiment, the lifting device can be automatically controlled, for example, to automatically adjust the distance between the target surface and the magnet assembly, e.g., over the lifetime of the target or even over the lifetime of the target. For example, the lifting device can help improve uniformity, predictability, and reliability of target material removal. With improved material removal uniformity, layer uniformity on the substrate can be optimized.

[0033] FIG. 3a shows target arrangement 104 in accordance with some embodiments described herein. FIG. 3B shows an enlarged view of a section of the target arrangement 104. FIG. The target support 110 includes a frame with an opening 115 in the example shown in FIG. The target arrangement 104 further includes a non-planar target material 120 provided on the target support 110. The target arrangement 104 shown in FIGS. 3A and 3B includes a magnet assembly including three magnet elements 117, 118, and 119. In the example shown in FIG. 3B, the magnet elements each include a magnet yoke having poles of opposite polarity. The magnet elements may be at least partially arranged within the target support 110. According to some embodiments, the magnet assembly is at least partially positioned within the non-planar target. According to some embodiments, the three magnet elements may be rotatable about an axis that is rotatable, and in particular, substantially parallel to the longitudinal axis of the non-planar target material. In some embodiments, the magnet assembly rotates along an arc that may correspond to a non-planar target arc. According to some embodiments, the magnet assembly can only rotate in one direction. In some embodiments, the magnet assembly is configured to continuously rotate. When continuously rotating, the magnet assembly can provide a magnetic field for the target material, and such a magnetic field particularly ensures uniform deposition of the target material.

[0034] According to some embodiments, the magnet elements of the magnet assembly may be provided on a rotating element, such as a drum, to which the magnet elements are attached. According to some embodiments, the magnet yokes of the three magnet elements are connected to a rotating element, for example, directly connected to a rotary drum (e.g., without additional support elements for the magnet yokes). In some embodiments, each of the magnet elements includes two stimuli, in particular, each magnet element includes one stimulus in the form of a race track, which surrounds the other stimulus. Figure 3b shows a section of the target support 110 and one skilled in the art will appreciate that the outer poles of each of the magnet yokes surrounding the inner pole can form a closed loop in the overall view of the target support I can understand. In one example, the three magnet elements are offset from each other by an angle of about 120 degrees. In some embodiments, the magnet elements may be arranged along a line that allows each of the magnet elements to have substantially the same distance from the vacuum chamber to the target surface when rotated to a position toward the target material. In particular, the magnet elements may be arranged along a circular line. According to embodiments that may be combined with other embodiments described herein, the magnet assembly may include more than three magnet elements, for example, four or five magnet elements as described above.

[0035] In one example, and as can be seen in FIG. 3b, when the magnet assembly is rotated, one or more completed race tracks are present on the non-planar target surface. As one racetrack leaves the surface of the non-planar target due to rotation of the magnet assembly, the next race track captures electrons to remove material from the non-planar target. According to some embodiments, the drive for the magnet assembly may be arranged behind the magnet yokes at the atmosphere side of the target arrangement. The direct drive may be used to drive the rotational motion of the magnet assembly. According to some embodiments, the magnet assembly can be driven in atmospheric conditions on the atmospheric side of the target support. In one example, the magnet assembly is driven at a temperature of less than 60 ° C, for example, from about 30 ° C to about 40 ° C.

[0036] In some embodiments, the distance between the target surface and the magnet assembly may be adjustable. As described in connection with FIG. 2, the target arrangement 104 may be provided with a lifting device to maintain a constant distance between the non-planar target surface and the magnet assembly. For example, using a mechanical gear or a triple eccentric device, the distance between the target surface and the magnets can be varied.

[0037] By continuous motion of the magnet assembly, the voltage, current, and power supplies used for the process can be kept constant. Using an adjustable magnet assembly, it is possible to adjust or control the sputter voltage (or current) at one level. In addition, various beneficial effects can be achieved by the embodiments described herein. In particular, an easy mechanic design for magnet rotation can be used. Easy mechanical design saves production and installation costs. A magnet assembly that is mounted and operated under atmospheric conditions can help to design the magnet assembly in an easy manner. Also, when the magnet assembly is continuously rotated, there is no delay time due to, for example, changing the orientation of the magnet assembly in the wobbling mode. In accordance with the embodiments described herein, the magnet assembly can be rotated at a very high speed. It is also possible to use larger racetracks using the embodiments described herein. Also, using the embodiments described herein, effects on target utilization may be possible, such as by different lengths after the cathode or by various magnet yokes and the like. Process efficiency is increased. The process efficiency (and in particular, the sputter rate) may also be increased, for example, by having more than one race track on the target surface when three or four magnet elements are rotated. Theoretically, it becomes possible to use the entire surface of the sputter target for the plasma.

[0038] Although the figures show substantially circular arc for a non-planar target, the embodiments described herein are not limited to circular arrays.

[0039] As used herein, the term "substantially" may mean that there may be some deviation from the characteristics indicated with "substantially". For example, the term "substantially circular" refers to a shape that can have a deviation of about 1% to 15% in elongation from any correct deviations, e.g., in one direction or more than one direction. Similarly, it should be understood that the term "substantially elliptical" or "substantially parabolic" includes from about 1% to 15% variation in one or more directions from a strict definition.

[0040] Figures 4A-4C illustrate embodiments of a non-planar target 120 for a target support in accordance with embodiments described herein. FIG. 4A shows a non-planar target 120 having substantially the shape of an arc of ellipses. For example, the target includes a cross-section including a segment of an ellipse having a shape of an arc of an ellipse. As can be seen in Figure 4a, the target includes a non-planar outer surface and a non-planar inner surface, and the target has a specific thickness. In some embodiments, the shape of the inner surface of the target corresponds to the shape of the outer surface of the target. 4B shows an embodiment of a non-planar target 120 having a cross-section with a parabola arc shape. 4C shows an embodiment of a non-planar target having a first part 121 having a cross-section of an arc and a second section 122 having a substantially straight shape. Those skilled in the art will appreciate that the features described with respect to FIG. 4A may also be applied to the embodiments of FIGS. 4B and 4C.

[0041] According to some embodiments, the arcs described herein encompass angles typically less than 360 degrees, more typically less than 300 degrees, and more typically less than 280 degrees. In one embodiment, the angle of the arc may be approximately 180 degrees.

[0042] In general, the non-planar target may include a curved surface. The curved surface may have curvature, and in additional embodiments, it may be composed of different curvatures, for example, the curved surface may be composed of different arcs, each having a different curvature and / or radius.

[0043] FIG. 5A illustrates a processing chamber 105 that is part of a processing apparatus for processing a substrate. The processing chamber includes chamber walls 150, 151, 152, and 153. The chamber walls 150, 151, 152, and 153 separate the interior of the processing chamber from the exterior of the processing chamber. Inside the processing chamber, the substrate may be held by the substrate support 154. According to some embodiments, the substrate support may also be used to guide the substrate in a continuous process. Typically, a processing chamber is made for a vacuum process, for example, by providing respective adapted sluices for the substrate, vacuum pumps, and respective sealing devices.

[0044] As can be seen in FIG. 5A, two target arrangements 106 with non-planar targets are provided in the processing chamber 105. According to some embodiments, target arrangements 106 may be target arrangements as described above in the embodiments. The processing chamber 105 may be configured to mount a target arrangement as described in the embodiments herein to the chamber walls, particularly to the target support. In one example, the processing chamber 105 is configured to mount a support plate of a target support to the chamber walls, whereby a target arrangement with an atmosphere side and a vacuum side can be provided in the processing chamber. According to some embodiments, the processing chamber 105 may have respective openings, and a target arrangement as described in the embodiments herein may be placed in such openings. In some embodiments, the target arrangements 106 can be mounted to the processing chamber from outside the chamber, and in particular, the mounting of the target arrangement is performed in the direction of the arrow 160. The chamber according to the embodiments described herein may be configured to mount the target arrangement from the outside. To mount the target arrangements, the opening or entry of the processing chamber is not used (except to open the chamber by removing the worn target arrangement). Mounting the target arrangement from the outside of the chamber is particularly beneficial for process efficiency because it is neither easy nor complicated to mount a new target or replace a worn target and does not use access to the vacuum chamber by a door or the like Because.

[0045] FIG. 5B is a side view of the processing chamber 105 shown in FIG. 5A. FIG. 5B illustrates a target arrangement 160 including a plate-shaped base 112 and a non-planar target 120. FIG. With the target arrangement 106 mounted, the vacuum side 130 of the target arrangement inside the processing chamber 105 and the atmosphere side 140 of the target arrangement outside the processing chamber 105 can be seen.

[0046] FIG. 5C shows a cross-sectional view of the processing chamber 105 along line A-A as shown in FIG. 5A. For a better overview, the target arrangement 106 is shown without the magnet assembly in Figure 5c. Those skilled in the art will appreciate that the features described above with respect to the magnet assembly can be applied to the target arrangement 106 shown in Figures 5A-5D.

[0047] As can be seen in more detail in FIG. 5c, the target arrangement 106 includes a backing element having the shape of a semi-cylindrical tube, and a target support 110 including a plate-shaped base. According to some embodiments, the target support 110 may include, for example, a hollow section 115 provided by a semi-cylindrical tube.

[0048] FIG. 5D shows a rear view of the processing chamber 105 shown in FIG. 5A. From the rear view, the atmospheric side of the target arrangements 106 of the processing chamber 105 can be seen. In the embodiment shown in FIG. 5D, the target arrangements 106 include a target support 110 and a hollow section 115. According to some embodiments, the hollow sections 115 may provide access to a non-planar target or to a backing element (e.g., a semi-cylindrical tube) for a non-planar target. In one example, the magnet assembly may be in the hollow section 115 of the target support 110.

[0049] The target arrangement shown in the above-described figures provides a target arrangement with a substantially vertical extension. However, those skilled in the art will appreciate that the target arrangements described herein can also be used with horizontal extension. 6 shows an example of a processing chamber 107 having a target arrangement 108 of horizontal extension. The target arrangement may be a target arrangement as described above, and may have some or all of the above-described features of the described target arrangements. According to some embodiments, the target arrangement provides a target support 110 and a hollow section 115. In the embodiment of FIG. 6, the target support 110 supports a non-planar target 120. In the embodiment of Figure 6, a substrate may be provided below the target arrangement 108 in the processing chamber and / or under the target arrangement to deposit materials from above.

[0050] Typically, a processing chamber adapted to receive a target arrangement according to embodiments described herein may include connecting means for securing the target arrangement to the processing chamber. For example, the processing chamber may include holes, bores, barbs, bolts, screw connections, clamping devices, etc. to secure the target arrangement to the processing chamber.

[0051] According to different embodiments that may be combined with other embodiments described herein, the target material may be selected from the group consisting of: ceramic, metal, ITO, IZO, IGZO, AZO, SnO, AlSnO, InGaSnO, , Molybdenum, and combinations thereof. The target material is typically provided by a material that is to be deposited on a substrate, by a material to be deposited on the substrate, or by reacting with a reactive gas in a processing region and then reacting with a reactive gas.

[0052] According to some embodiments that may be combined with other embodiments described herein, the embodiments described herein may be utilized for display PVD, ie, sputter deposition on large area substrates for the display market . In some embodiments, large area substrates or each of the carriers-carriers have a plurality of substrates-may have a size of at least 0.67 m < 2 >. Typically, the size may be from about 0.67 m 2 (0.73 x 0.92 m - 4.5 generation) to about 8 m 2, more typically from about 2 m 2 to about 9 m 2, or even up to 12 m 2. Typically, the substrates or carriers are large area substrates as described herein, and structures, devices, e.g., cathode assemblies, and methods according to embodiments described herein are used for such substrates or carriers / RTI > For example, a large area substrate or carrier may be a 4.5 generation, approximately 4.2 square meters corresponding to approximately 0.67 square meters (0.73 x 0.92 m) substrates, approximately 4.29 square meters corresponding to approximately 1.4 square meters substrates (1.1 x 1.3 m) m corresponding to 8.5 m substrates (2.2 m x 2.5 m), or even about 8.7 m substrates (2.85 m x 3.05 m) corresponding to 7.5 m m substrates (2.2 m x 2.2 m). Even larger generations such as the eleventh and twelfth generations and corresponding substrate areas can similarly be implemented.

[0053] In some embodiments, target arrangements in accordance with the embodiments described herein may be used in a processing device for various processes, such as PVD processes, CVD processes, PECVD processes. Named processes can also be combined while the substrate is being moved through the processing device. In particular, different PECVD processes may be utilized, for example, for TFT or soluble TFT fabrication, and more specifically for ultrahigh barriers, microwave plasma processes, and the like.

[0054] FIG. 7 shows a flow diagram of a method 700 for manufacturing a target arrangement to be used in a processing device. According to some embodiments, the method may be used to produce a target arrangement as described in the above embodiments, such as the embodiments shown in Figures 1-6. The method 700 includes forming, in a first box 710, a target support configured to support a non-planar target material. The step of forming the target support includes forming the target support to have a vacuum side and an atmospheric side. According to some embodiments, forming the target support may include processing methods such as casting, annealing, surface treatment, and the like.

[0055] In some embodiments, the target support may be made of a material such as Cu, Ti, or stainless steel. In some embodiments, forming the target support may include forming a target support having a plate-shaped base and a hollow section, as described above with respect to the embodiments shown in Figs. 1-6. have. According to additional or alternative embodiments, the target support may be formed, for example, by providing a plate-shaped base, a side support, and a front support to form a target support, . The method according to the embodiments described herein may include methods for forming any embodiment of the target arrangement referred to herein. For example, forming the target arrangement can include assembling two or more parts to form a target support, e.g., assembling the plate-shaped base and side support.

[0056] At box 720, the method 700 further comprises providing a target material on a target support. According to embodiments described herein, the target material comprises a curved surface. For example, the surface of the target material may have a circular, elliptical, or parabolic arc shape. In some embodiments, the target material may have a shape as described in detail above with respect to the embodiments shown in Figs. 1-6. According to some embodiments, the target material can be provided at the same time when the target support is formed, e.g., when the target support is made of a target material (e.g., aluminum). In some embodiments, the target support and the target material may be provided integrally.

[0057] In some embodiments, the step of providing the target material may comprise the steps of providing a target material such as ceramic, metal, ITO, IZO, IGZO, AZO, SnO, AlSnO, InGaSnO, titanium, aluminum, copper, molybdenum, Lt; RTI ID = 0.0 > materials. ≪ / RTI >

[0058] According to some embodiments, providing the target material comprises binding the target material to the target support. In one example, binding the target material to the target support may include providing an adhesive between the target support and the target material that is suitable for reliable bonding during the process in which the target arrangement is to be used. For example, the bond between the target support and the target material should be strong enough to withstand the intended process temperature, temperature changes, pressure changes, low pressure, vacuum, plasma present in the processing chamber, and the like. According to some embodiments, the bonding may include fixing by gluing or gluing, fixing by welding, fixing by thermal processes, fixing by screwing, and the like. In other embodiments, bonding may include spraying the target material onto the target support, or casting or pressing the powder onto the outer surface of the target support.

[0059] According to some embodiments, target arrangements in accordance with the embodiments described herein may have various desired characteristics. For example, as compared to a rotatable target, no drive for the target arrangement is used. Not using a drive for target arrangement reduces design complexity and design demand, which saves time and costs-consequently. For example, the reduced complexity of the target acquisition design results in few maintenance costs. In addition, the uptime of the processing chamber can be increased by reducing maintenance effort.

[0060] In addition, the target arrangement according to the embodiments described herein has reduced particle generation compared to a rotatable target. The target arrangement and the target support remain static during the sputter process while simultaneously having a high process efficiency. The rotatable target creates unwanted particles due to rotational motion of the target and support. For example, particles from the target support can negatively affect the deposition quality. According to some embodiments, a target arrangement, particularly a non-planar target on the target support with an atmospheric side and a vacuum side, allows to include a lifting device for maintaining a constant distance between the magnet assembly and the target surface . In comparison to the rotatable target, the target arrangement according to the embodiments described herein provides additional functions.

[0061] According to some embodiments, the manufacturing process for the target arrangement in which the target material is provided on the target support is simpler than the manufacturing process for the rotatable target. For example, it is easier to bond the target material to a target support, which in one example may have the shape of a semi-cylindrical tube, and it is easier to bond larger forces on the semi-cylindrical tube than on forces that can be applied to a round target . ≪ / RTI > Low manufacturing costs can result.

[0062] In some embodiments, the processing chamber designs may be used for target acquisition according to embodiments described herein, which were previously used for planar targets. For example, target arrangements in accordance with the embodiments described herein may be deployed in existing processing chambers. According to other embodiments, the processing chambers may be configured to accommodate a target arrangement as described herein.

[0063] As mentioned above, the design of the target arrangement allows the magnet system to be arranged on the target support and the non-planar target. Non-planar targets with curved surfaces allow more than one magnet element to be used for target acquisition. In particular, the number of magnet elements used can be chosen according to the radius of curvature of the non-planar target. Increasing the number of magnet elements, especially the number of race tracks for non-planar targets, can increase the sputter rate, which in turn increases process speed and process efficiency.

While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope of the present invention is defined by the following claims .

Claims (15)

A target arrangement (100; 101; 102; 103; 104; 106) for a processing device (105; 107)
A target support 110 configured to support a non-planar target material 120, wherein the target support 110 includes a vacuum side 130 and an atmospheric side 140, / RTI >
The vacuum side 130 of the target support 110 may be mounted to the chamber wall from the outside of the processing chamber toward the interior of the processing chamber and the replacement of the target arrangement may be achieved without opening or closing the chamber door,
A target arrangement for a processing device. The method according to claim 1,
Further comprising a magnet assembly (117) configured for magnetron sputtering from the target material (120), the magnet assembly (117; 118; 119)
A target arrangement for a processing device. The method according to claim 1,
Further comprising a magnet assembly (117) configured for magnetron sputtering from the target material (120) extending in a first direction along the length of the target support, wherein the magnet assembly (117; 118, 119) Wherein the rotational axis of the rotational motion is parallel to the first direction,
A target arrangement for a processing device. The method according to claim 2 or 3,
The magnetic assembly includes three magnet elements (117; 118, 119), the three magnet elements being arranged to allow each of the magnet elements to have the same distance to the non-planar target material Arranged along the line,
A target arrangement for a processing device. 4. The method according to any one of claims 1 to 3,
The target support 110 is configured to support the target material 120 having a surface extending in length and in the form of a circle, an ellipse, or an arc of parabola felled,
A target arrangement for a processing device. 4. The method according to any one of claims 1 to 3,
Further comprising a target material extending along the length and having a bent surface,
A target arrangement for a processing device. 6. The method of claim 5,
The arc is a circle arc, and the length of the arc is
Figure 112017018756212-pct00003
Lt; RTI ID = 0.0 >
Figure 112017018756212-pct00004
<360 °,
A target arrangement for a processing device. 4. The method according to any one of claims 1 to 3,
The target support 110 includes a plate-like basis 111 and a structure 112, 113 extending from the plate-like base 111. The plate-
A target arrangement for a processing device. The method according to claim 2 or 3,
Further comprising a lifting device for maintaining a constant distance between the surface of the target material (120) at the vacuum side (130) and the magnet system (117; 118; 119)
A target arrangement for a processing device. 4. The method according to any one of claims 1 to 3,
Further comprising a target material provided on the target support, wherein at least one of the target support and the target material has a shape of a half cylindrical tube,
A target arrangement for a processing device. A processing device (105; 107) for processing a substrate,
A processing chamber having an exterior and an interior, the processing chamber being adapted to house a substrate during a process;
A substrate support 154 for the substrate to be processed;
The processing chamber is adapted to receive a target arrangement (100; 101; 102; 103; 104; 106) according to any one of claims 1 to 3,
A processing device for processing a substrate. 12. The method of claim 11,
The processing apparatus further comprises a target arrangement (100; 101; 102; 103; 104; 106) according to any one of claims 1 to 3,
A processing device for processing a substrate. 12. The method of claim 11,
The processing apparatus (105; 107) is configured to couple the target arrangement (100; 101; 102; 103; 104; 106) from the exterior of the processing chamber to the processing chamber.
A processing device for processing a substrate. 10. A method for fabricating a target arrangement to be used in a processing device (105; 107)
A lithographic apparatus comprising: a target support (110) configured to support a non-planar target material (120), the target support (110) comprising a vacuum side (130) and an atmospheric side (140);
Providing a target material (120) on the target support (110), the target material (120) having a curved surface, at least after being provided on the target support (110)
The vacuum side 130 of the target support 110 may be mounted to the chamber wall from the outside of the processing chamber toward the interior of the processing chamber and the replacement of the target arrangement may be achieved without opening or closing the chamber door,
A method for manufacturing a target arrangement to be used in a processing device. 15. The method of claim 14,
Wherein providing the target material comprises binding the target material (120) to the target support (110).
A method for manufacturing a target arrangement to be used in a processing device.
KR1020177005049A 2014-07-22 2014-07-22 Target arrangement, processing apparatus therewith and manufacturing method thereof KR101913791B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/065739 WO2016012038A1 (en) 2014-07-22 2014-07-22 Target arrangement, processing apparatus therewith and manufacturing method thereof

Publications (2)

Publication Number Publication Date
KR20170039218A KR20170039218A (en) 2017-04-10
KR101913791B1 true KR101913791B1 (en) 2018-11-01

Family

ID=51225522

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177005049A KR101913791B1 (en) 2014-07-22 2014-07-22 Target arrangement, processing apparatus therewith and manufacturing method thereof

Country Status (4)

Country Link
KR (1) KR101913791B1 (en)
CN (1) CN206858649U (en)
TW (1) TW201617469A (en)
WO (1) WO2016012038A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102450392B1 (en) * 2015-11-26 2022-10-04 삼성디스플레이 주식회사 Sputtering Apparatus
JP7097172B2 (en) * 2017-11-21 2022-07-07 キヤノントッキ株式会社 Sputtering equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060118412A1 (en) 2003-05-23 2006-06-08 Jorg Krempel-Hesse Magnetron sputter cathode
US20120012458A1 (en) * 2010-07-16 2012-01-19 Applied Materials, Inc. Magnet arrangement for a target backing tube, target backing tube including the same, cylindrical target assembly and sputtering system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH024965A (en) * 1988-06-09 1990-01-09 Hitachi Ltd Sputtering target and magnetron sputtering device using the same
EP0439361B1 (en) * 1990-01-26 2003-06-11 Varian Semiconductor Equipment Associates Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
JP2009084666A (en) * 2007-10-02 2009-04-23 Hitachi Plasma Display Ltd Sputtering apparatus
EP2709138B1 (en) * 2010-05-11 2016-11-30 Applied Materials, Inc. Chamber for physical vapor deposition
GB201200574D0 (en) * 2012-01-13 2012-02-29 Gencoa Ltd In-vacuum rotational device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060118412A1 (en) 2003-05-23 2006-06-08 Jorg Krempel-Hesse Magnetron sputter cathode
US20120012458A1 (en) * 2010-07-16 2012-01-19 Applied Materials, Inc. Magnet arrangement for a target backing tube, target backing tube including the same, cylindrical target assembly and sputtering system

Also Published As

Publication number Publication date
KR20170039218A (en) 2017-04-10
TW201617469A (en) 2016-05-16
CN206858649U (en) 2018-01-09
WO2016012038A1 (en) 2016-01-28

Similar Documents

Publication Publication Date Title
JP6385487B2 (en) Method and coater for coating a substrate
EP2855729B1 (en) Method for coating a substrate and coater
US20130032476A1 (en) Rotary cathodes for magnetron sputtering system
KR20130100325A (en) Systems and methods for forming a layer of sputtered material
KR20060045884A (en) Coater with a large-area assembly of rotatable magnetrons
TWI468539B (en) Device for supporting a rotatable target and sputtering apparatus
KR101913791B1 (en) Target arrangement, processing apparatus therewith and manufacturing method thereof
KR20170000267U (en) Apparatus and method for coating a substrate by rotary target assemblies in two coating regions
US20110079511A1 (en) Magnet arrangement for a target backing tube and target backing tube comprising the same
KR102141978B1 (en) Shielding device for a rotatable cathode, rotatable cathode and method for shielding a dark space in a deposition apparatus
KR102255959B1 (en) Deposition apparatus for depositing a material on a substrate and cathode drive unit

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right