CN110904412A - 一种提高太赫兹器件散热及输出功率的方法 - Google Patents
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Abstract
本发明公开了一种提高太赫兹器件散热及输出功率的方法,包括:在太赫兹器件表面沉积导热薄膜;所述太赫兹器件为太赫兹量子级联激光器。所述导热薄膜为氮化铝薄膜;所述沉积采用的方法为脉冲激光沉积法所述脉冲激光沉积法的过程为:将太赫兹量子级联激光器装入脉冲激光沉积设备中,采用AlN陶瓷靶进行沉积;设置沉积参数:抽真空,激光能量200mJ,频率2Hz,靶基距10cm,所述氮化铝薄膜的厚度为0.8~1.2μm。本发明采用在太赫兹器件表面沉积导热薄膜,更优选为氮化铝薄膜,该氮化铝薄膜覆盖太赫兹量子级联激光器的输出功率得到明显提高,表明通过制备氮化铝薄膜覆盖太赫兹量子级联激光器可以提高器件的散热,从而达到提高器件输出功率的目的。
Description
技术领域
本发明涉及半导体光电器件应用技术领域,具体涉及一种提高太赫兹器 件散热及输出功率的方法。
背景技术
太赫兹(THz)波是指频率从300GHz-10THz,频率介于毫米波与红外光之 间的电磁波。由于其自身的特点,太赫兹波在高速通信、成像、频谱分析和 遥感等方面,具有广阔的应用前景。作为THz频段重要辐射源的太赫兹量子 级联激光器(Terahertz QuantumCascade Laser,THz QCL)得到了广泛而深入的 研究,并取得了重要的进展。THzQCL具有能量转换效率高、响应速度快、 体积小、易集成以及使用寿命长等特点。其中,太赫兹光谱学、通信、成像 等系统中需要具有良好的温度特性、能够连续状态工作的THz QCL。通常THzQCL工作在高偏压和电流下,大部分输入电功率最终转换成了焦耳热。不能 从器件中及时散出的焦耳热会积累在器件中,最终导致有源区温度升高。而 有源区温度升高会使上能级到下能级的非辐射光学声子散增加,破坏粒子数 反转,抑制器件激射,降低辐射效率。另外,在较高温度下,载流子分布在 更宽广的能级范围内,也会抑制器件激射。当THz QCL处于连续或高占空比 脉冲的工作状态下,热量产生会更多,散热问题更加严重。
发明内容
本发明的一个目的是解决至少上述问题和/或缺陷,并提供至少后面将说 明的优点。
为了实现根据本发明的这些目的和其它优点,提供了一种提高太赫兹器 件散热及输出功率的方法,包括:在太赫兹器件表面沉积导热薄膜。
优选的是,所述太赫兹器件为太赫兹量子级联激光器。
优选的是,所述导热薄膜为氮化铝薄膜。
优选的是,所述沉积采用的方法为脉冲激光沉积法。
优选的是,所述脉冲激光沉积法的过程为:将太赫兹量子级联激光器的 出光面用胶遮盖,然后装入脉冲激光沉积设备中,采用AlN陶瓷靶进行沉积, 设置固定频率的脉冲激光,用脉冲激光轰击AlN陶瓷靶一定时间;设置沉积 参数:抽真空,真空度5×10-5Pa,激光能量200mJ,频率2Hz,靶基距10cm, 沉积发数144000,分三次沉积,沉积温度为室温,其中,沉积发数为脉冲激 光轰击靶材的次数,且在沉积过程中使器件进行旋转以保证沉积薄膜的均匀 性。
优选的是,所述氮化铝薄膜的厚度为0.8~1.2μm。
本发明至少包括以下有益效果:本发明采用在太赫兹器件表面沉积导热 薄膜,更优选为氮化铝薄膜,该氮化铝薄膜覆盖太赫兹量子级联激光器的输 出功率得到明显提高,表明通过制备氮化铝薄膜覆盖太赫兹量子级联激光器 可以提高器件的散热,从而达到提高器件输出功率的目的。
本发明的其它优点、目标和特征将部分通过下面的说明体现,部分还将 通过对本发明的研究和实践而为本领域的技术人员所理解。
附图说明:
图1为本发明THz QCL激光器镀AlN前后的脉冲输出功率对比曲线;
图2为本发明THz QCL激光器镀AlN后的不同位置的光学显微镜图;
图3为本发明THz QCL激光器镀AlN前的实物照片;
图4为本发明THz QCL激光器镀AlN后的实物照片;
图5为独角仙腿的生物全息成像。
具体实施方式:
下面结合附图对本发明做进一步的详细说明,以令本领域技术人员参照 说明书文字能够据以实施。
应当理解,本文所使用的诸如“具有”、“包含”以及“包括”术语并不配出一 个或多个其它元件或其组合的存在或添加。
实施例1:
一种提高太赫兹器件散热及输出功率的方法,包括:在太赫兹量子级联 激光器表面沉积氮化铝薄膜;
所述脉冲激光沉积法的过程为:将太赫兹量子级联激光器的出光面用胶 遮盖,然后装入脉冲激光沉积设备中,采用AlN陶瓷靶进行沉积,设置固定 频率的脉冲激光,用脉冲激光轰击AlN陶瓷靶一定时间;设置沉积参数:抽 真空,真空度5×10-5Pa,激光能量200mJ,频率2Hz,靶基距10cm,沉积发 数144000,分三次沉积,沉积温度为室温,其中,沉积发数为脉冲激光轰击 靶材的次数,且在沉积过程中使器件进行旋转以保证沉积薄膜的均匀性;沉积氮化铝薄膜的厚度为1μm;沉积薄膜后将出光面的胶去除;沉积时间与沉 积发数的关系为:沉积发数/2Hz=时间(s)。
图2为太赫兹量子级联激光器上制备的氮化铝AlN薄膜的光学显微镜 图;其中(a)、(b)、(c)和(d)代表不同区域的光学显微镜图;图2(a)和(b)为在 Au电极上沉积的AlN薄膜的光学显微镜图;图2(c)和(d)为在量子级联激光 器上沉积的AlN薄膜图;可以看到,量子级联激光器上沉积的AlN薄膜表面 覆盖性非常好,且致密性也很好;图2中看到裸露出来的部分是由于沉积薄 膜时导线对AlN薄膜有影响;但这并不影响整体AlN薄膜对器件导热性的作 用;并且从裸露出来部分也可以观察到沉积AlN薄膜的厚度也是足够的;图 3为未沉积AlN薄膜的THz QCL激光器的实物图;图4为沉积了AlN薄膜 的THz QCL激光器的实物图;从图3和4中可以看出,沉积了AlN薄膜的 器件颜色发生明显改变;且由于AlN薄膜具有良好的导热特性,对器件在工 作时的散热也具有增强的作用。
将该镀氮化铝的太赫兹量子级联激光器和未镀氮化铝的太赫兹量子级联 激光器的输出功率进行了测量;将镀氮化铝的太赫兹量子级联激光器或未镀 氮化铝的太赫兹量子级联激光器安装在闭循环低温系统中杜瓦的冷指上,经 真空抽取和系统降温小于10K,测试低温电阻R=1.4KΩ;调节激光器电源(DEI PCX-7420)的输出,使激光器所产生的脉冲THz辐射经winston光锥(美国 IR lab公司F2.0型)汇聚后穿过PE窗片,由OPHIR 3A-P-THz功率探测器(频 率范围0.3THz-10THz,功率量程0W-3W,噪声水平5μW,接收面元直径大 于30mm)收集,并通过与功率探测器匹配的OPHIR II功率计数显表头给出 实际测得太赫兹波脉冲输出功率。测试结果如表1所示和图1所示。
表1
表1未镀和镀氮化铝的THz QCL激光器脉冲输出功率
从表1和图1的对比结果可以看出,制备AlN薄膜覆盖THz QCL器件 的输出功率得到明显提高,特别是小于50K的工作温度下输出功率提升13%。 表明通过制备AlN薄膜覆盖THz QCL器件可以提高器件的散热,从而达到 提高器件输出功率的目的。
将本发明的镀AlN膜THz QCL器件应用于移动式QCL-THz全息成像仪 的全息成像实验,为该仪器提供了脉冲输出功率更高的THz光源;图5所示 为基于该器件,采用移动式QCL-THz全息成像仪,获得的独角仙腿全息成像。
对比例1:
太赫兹量子级联激光器的出光面未用胶遮盖,其与工艺参数与实施例1 相同;
将该THz QCL激光器的输出功率进行了测量,测试结果发现,该器件 的输出功率降低,进一步原因分析发现,THz QCL激光器的腔面(出光面) 镀上了AlN薄膜,从而导致输出功率的衰减而降低。
尽管本发明的实施方案已公开如上,但其并不仅仅限于说明书和实施方 式中所列运用,它完全可以被适用于各种适合本发明的领域,对于熟悉本领 域的人员而言,可容易地实现另外的修改,因此在不背离权利要求及等同范 围所限定的一般概念下,本发明并不限于特定的细节和这里示出与描述的图 例。
Claims (6)
1.一种提高太赫兹器件散热及输出功率的方法,其特征在于,包括:在太赫兹器件表面沉积导热薄膜。
2.如权利要求1所述的提高太赫兹器件散热及输出功率的方法,其特征在于,所述太赫兹器件为太赫兹量子级联激光器。
3.如权利要求1所述的提高太赫兹器件散热及输出功率的方法,其特征在于,所述导热薄膜为氮化铝薄膜。
4.如权利要求2所述的提高太赫兹器件散热及输出功率的方法,其特征在于,所述沉积采用的方法为脉冲激光沉积法。
5.如权利要求4所述的提高太赫兹器件散热及输出功率的方法,其特征在于,所述脉冲激光沉积法的过程为:将太赫兹量子级联激光器的出光面用胶遮盖,然后装入脉冲激光沉积设备中,采用AlN陶瓷靶进行沉积,设置固定频率的脉冲激光,用脉冲激光轰击AlN陶瓷靶一定时间;设置沉积参数:抽真空,真空度5×10-5Pa,激光能量200mJ,频率2Hz,靶基距10cm,沉积发数144000,分三次沉积,沉积温度为室温,其中,沉积发数为脉冲激光轰击靶材的次数,且在沉积过程中使器件进行旋转以保证沉积薄膜的均匀性。
6.如权利要求3所述的提高太赫兹器件散热及输出功率的方法,其特征在于,所述氮化铝薄膜的厚度为0.8~1.2μm。
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CN103915758A (zh) * | 2014-03-26 | 2014-07-09 | 中国科学院上海微系统与信息技术研究所 | 一种多模干涉结构太赫兹量子级联激光器及制作方法 |
CN104538844A (zh) * | 2015-01-27 | 2015-04-22 | 中国科学院上海微系统与信息技术研究所 | 太赫兹量子级联激光器器件结构及其制作方法 |
CN105655866A (zh) * | 2016-02-01 | 2016-06-08 | 中国科学院半导体研究所 | 一种太赫兹半导体激光器及其制造方法 |
CN106328774A (zh) * | 2016-08-29 | 2017-01-11 | 华南理工大学 | 一种GaN薄膜的外延生长方法及应用 |
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