CN110902640B - High-sensitivity MEMS resonant temperature sensor chip - Google Patents
High-sensitivity MEMS resonant temperature sensor chip Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0024—Transducers for transforming thermal into mechanical energy or vice versa, e.g. thermal or bimorph actuators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0037—For increasing stroke, i.e. achieve large displacement of actuated parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/32—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using change of resonant frequency of a crystal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0278—Temperature sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
Abstract
The invention relates to a high-sensitivity MEMS resonant temperature sensor chip, and belongs to the technical field of MEMS temperature sensors. The quartz crystal resonator comprises a quartz glass annular base and a quartz crystal resonance layer; the quartz crystal resonance layer comprises a diamond-shaped force amplification resonator, a first quartz arm, a second quartz arm, a first anchor point and a second anchor point; the rhombic force amplifying resonator comprises a rhombic ring and a quartz tuning fork with two fixedly supported ends; the first anchor point, the first quartz arm, the second quartz arm and the second anchor point are positioned on the short diagonal line of the diamond-shaped ring; the double-ended clamped quartz tuning fork is positioned on the long diagonal line of the diamond-shaped ring. When the temperature of the detected environment changes, the quartz crystal resonance layer generates thermal expansion deformation due to the restriction of the annular base, generates larger axial stress inside the pair of quartz arms, and acts on the double-end fixedly-supported quartz tuning fork through the amplification of the diamond ring; the invention obviously improves the sensitivity of the sensor and the stability of the resonant frequency, and has the advantages of simple structure, strong anti-interference capability and the like.
Description
Technical Field
The invention belongs to the technical field of MEMS (micro-electromechanical systems) temperature sensors, and particularly relates to a high-sensitivity resonant MEMS temperature sensor chip.
Background
With the development of science and technology, industrial production puts higher and higher requirements on temperature measurement, such as ultra-precise thermostatic control environment, which requires higher sensitivity and good anti-interference capability of a temperature sensor. With the rapid development of Micro-Electro-Mechanical-Systems (MEMS), MEMS resonant temperature sensors are emerging, and such sensors are mainly manufactured by using the principle that the temperature changes cause the natural frequency changes of resonant devices, and have the advantages of small volume, quasi-digital output, strong anti-interference capability, and the like. The materials of the resonator mainly comprise monocrystalline silicon and quartz crystal, wherein the monocrystalline silicon material has good compatibility with MEMS process, the structural form of the resonator mainly adopts a cantilever beam structure with two or more materials with different thermal expansion coefficients, when the temperature changes, the cantilever beam generates bending deformation, the temperature measurement is realized by utilizing the resonance frequency change caused by the structural shape change, the excitation and the detection of the sensor are complex, the quality factor is low, and in addition, the sensitivity is not high and is generally about tens of hertz per degree centigrade due to the restriction of the structural form. In contrast, the quartz crystal has high quality factor, inherent piezoelectric effect, and the resonator made by using the quartz crystal is simple and reliable in excitation, and at present, the temperature sensor is mainly made by using the frequency temperature coefficient of the quartz crystal, the sensitivity of the temperature sensor mainly depends on the cut shape of the quartz crystal, generally about a few hertz per degree centigrade, and the sensitivity of the temperature sensor is difficult to further improve by changing the cut shape.
Disclosure of Invention
The invention provides a high-sensitivity resonant MEMS temperature sensor chip, aiming at solving the problem that the conventional resonant temperature sensor is low in sensitivity.
A high-sensitivity MEMS resonant temperature sensor chip comprises a quartz glass annular base 6 and a quartz crystal resonant layer 7;
the quartz crystal resonance layer 7 comprises a rhombic force amplification resonator 1, a first quartz arm 2, a second quartz arm 3, a first anchor point 4 and a second anchor point 5; the first anchor point 4 and the second anchor point 5 are symmetrically arranged on a quartz glass annular base 6, one end of the first quartz arm 2 is connected with the first anchor point 4, the other end of the first quartz arm is connected with one angle of a diamond ring 10 of the diamond force amplification resonator 1, one end of the second quartz arm 3 is connected with the second anchor point 5, and the other end of the second quartz arm is connected with the other angle of the diamond ring 10 of the diamond force amplification resonator 1; the first anchor point 4, the first quartz arm 2, the second quartz arm 3 and the second anchor point 5 are positioned on the short diagonal line of the diamond ring 10;
the rhombic force amplifying resonator 1 comprises a rhombic ring 10 and a double-ended clamped quartz tuning fork 12, wherein the double-ended clamped quartz tuning fork 12 comprises a first quartz beam 13 and a second quartz beam 14; the first quartz beam 13 and the second quartz beam 14 are parallel, two ends of the first quartz beam are respectively connected with the diamond-shaped ring 10 through the isolator 11, and the quartz tuning fork 12 fixedly supported by two ends is positioned on a long diagonal line of the diamond-shaped ring 10;
a first electrode 15 and a second electrode 16 are respectively distributed on the top surface and the bottom surface of the first quartz beam 13, and a first electrode 15 and a second electrode 16 are respectively distributed on the top surface and the bottom surface of the second quartz beam 14; the first electrode 15 on the first quartz beam 13 is connected in series with the first electrode 15 on the second quartz beam 14, and is led out through the diamond ring 10 and the second quartz arm 3 to be connected with the first pressure welding block 8 on the second anchor point 5; the second electrode 16 on the first quartz beam 13 is connected in series with the second electrode 16 on the second quartz beam 14, and is led out through the diamond ring 10 and the second quartz arm 3 to be connected with the second pressure welding block 9 on the second anchor point 5;
thermal expansion deformation caused by temperature change generates larger axial stress in the first quartz arm 2 and the second quartz arm 3, the axial stress is amplified by the diamond ring 10 and acts on two ends of the double-end fixedly-supported quartz tuning fork 12, the stress in the pair of quartz beams is increased, and high-sensitivity measurement on the temperature change is realized by sensing the change of the resonant frequency of the first quartz beam 13 and the second quartz beam 14.
The technical scheme for further limiting is as follows:
the first anchor point 4, the second anchor point 5 and the quartz glass annular base 6 are aligned and bonded together by the alignment mark 17.
The quartz glass annular base 6 is made of quartz glass and has a thermal expansion coefficient of about 5.5 multiplied by 10-7℃-1The thickness is 100-200 μm.
The quartz crystal resonance layer 7 is made of X-cut quartz crystal, and the Z-direction thermal expansion coefficient is 7.1 multiplied by 10-6℃-1The thickness is 80-150 μm; the first quartz arm 2 and the second quartz arm 3 are along the Z-axis direction of the quartz crystal, and the length of the double-ended clamped quartz tuning fork 12 is along the Y-axis direction of the quartz crystal.
And chromium-gold (Cr/Au) layer electrode materials are arranged on the surfaces of the first quartz beam 13, the second quartz beam 14, the first pressure welding block 8 and the second pressure welding block 9.
The beneficial technical effects of the invention are embodied in the following aspects:
1. two ends of the quartz crystal resonance layer are jointed with the quartz glass annular base through anchor points, the thermal expansion coefficients of the quartz crystal resonance layer and the quartz glass annular base are greatly different, when the temperature to be measured changes, the quartz arms on two sides of the rhombic force amplification resonator generate large axial stress which can reach dozens of MPa to hundreds of MPa due to thermal expansion deformation, and the stress acts on the rhombic force amplification resonator structure, so that the axial stress in the quartz tuning fork fixedly supported at two ends is further greatly improved. The double-ended clamped quartz tuning fork is used as a resonance sensitive element of the sensor, the larger the axial stress applied to the inside of the sensor is, the higher the sensitivity of the resonance frequency along with the temperature change is, and the higher the sensitivity of the sensor is. The traditional cantilever beam type silicon resonance MEMS temperature sensor has the advantages that due to single-end fixed support, a resonance sensitive element generates bending deformation after temperature change, and the internal axial stress is difficult to improve. ANSYS finite element simulation analysis results show that: compared with the existing resonant temperature sensor, the sensitivity of the invention is improved by two orders of magnitude, the sensitivity of the resonant frequency of the existing resonant temperature sensor along with the temperature change is generally from several hertz to dozens of hertz per degree centigrade, the invention can improve the sensitivity of the sensor to several kilohertz per degree centigrade, and can be applied to the environment of ultra-precise constant temperature control and the like.
2. The rhombic force amplification resonator can realize stress amplification to improve the sensitivity, and can isolate the resonance sensitive element from the anchor point of the sensor, thereby greatly reducing the energy loss of the anchor point and improving the stability of the resonance frequency. In addition, the rhombic force amplification resonator is made of quartz crystals, so that the excitation is simple and reliable, the quality factor is high, and the anti-interference capability of the sensor is good.
Drawings
FIG. 1 is a schematic view of a temperature sensor according to the present invention;
fig. 2 is a partially enlarged view of the diamond-shaped force amplifying resonator 1;
FIG. 3 is a schematic diagram of an electrode arrangement of a quartz tuning fork 12 with two fixed legs and a schematic diagram of a resonant mode;
FIG. 4 is a schematic view of the direction of an electric field in a quartz beam;
fig. 5 is a schematic diagram of the diamond-shaped force amplifying resonator 1 for realizing force amplification.
Sequence numbers in the upper drawing: the device comprises a rhombic force amplification resonator 1, a first quartz arm 2, a second quartz arm 3, a first anchor point 4, a second anchor point 5, a quartz glass annular base 6, a quartz crystal resonance layer 7, a first press welding block 8, a second press welding block 9, a rhombic ring 10, an isolator 11, a double-end clamped quartz tuning fork 12, a first quartz beam 13, a second quartz beam 14, a first electrode 15, a second electrode 16 and an alignment mark 17.
Detailed Description
The invention will be further explained by the embodiments with reference to the drawings.
Referring to fig. 1 and 2, the high-sensitivity resonant MEMS temperature sensor chip comprises a quartz glass ring-shaped base 6 and a quartz crystal resonant layer 7.
The quartz crystal resonance layer 7 comprises a rhombic force amplification resonator 1, a first quartz arm 2, a second quartz arm 3, a first anchor point 4 and a second anchor point 5. The first anchor point 4, the second anchor point 5 and the quartz glass annular base 6 of the quartz crystal resonance layer 7 are aligned and bonded together through the alignment mark 17. The quartz glass annular base 6 is of a rectangular structure with a hollow center, four rectangular holes are respectively formed in two short sides of the quartz glass annular base to serve as alignment marks 17, the quartz glass annular base 6 is hollow in the center to reduce interference between the quartz glass annular base and the quartz crystal resonance layer 7, and the alignment marks 17 are used for accurately positioning when the quartz crystal resonance layer 7 is bonded.
One end of the first quartz arm 2 is connected with a first anchor point 4, the other end of the first quartz arm is connected with one corner of a diamond ring 10 of the diamond force amplification resonator 1, one end of the second quartz arm 3 is connected with a second anchor point 5, the other end of the second quartz arm is connected with the other corner symmetrical to the diamond ring 10 of the diamond force amplification resonator 1, and the first anchor point 4, the first quartz arm 2, the second quartz arm 3 and the second anchor point 5 are located on a short diagonal line of the diamond ring 10, so that stress generated by thermal expansion of the first quartz arm 2 and the second quartz arm 3 directly acts on two ends of the diamond force amplification resonator 1. The rhombic force amplifying resonator 1 comprises a rhombic ring 10 and a double-ended clamped quartz tuning fork 12, wherein the double-ended clamped quartz tuning fork 12 comprises a first quartz beam 13 and a second quartz beam 14; the first quartz beam 13 and the second quartz beam 14 are parallel, two ends of the first quartz beam are connected with the diamond-shaped ring 10 through the isolator 11 respectively, the double-end clamped quartz tuning fork 12 is located on a long diagonal of the diamond-shaped ring 10, the isolator 11 can reduce energy dissipation of the double-end clamped quartz tuning fork 12 during vibration, and measurement sensitivity can be improved by arranging the double-end clamped quartz tuning fork along the long diagonal.
A first electrode 15 and a second electrode 16 are respectively distributed on the top surface and the bottom surface of the first quartz beam 13, and a first electrode 15 and a second electrode 16 are respectively distributed on the top surface and the bottom surface of the second quartz beam 14; the first electrode 15 on the first quartz beam 13 is connected in series with the first electrode 15 on the second quartz beam 14, and is led out through the diamond-shaped ring 10 and the second quartz arm 3 to be connected to the first pressure welding block 8 on the second anchor point 5, the second electrode 16 on the first quartz beam 13 is connected in series with the second electrode 16 on the second quartz beam 14, and is led out through the diamond-shaped ring 10 and the second quartz arm 3 to be connected to the second pressure welding block 9 on the second anchor point 5.
The quartz glass annular base 6 is made of quartz glass, the thickness of the quartz glass annular base is 100-200 mu m, and the quartz glass annular base has an extremely low thermal expansion coefficient (the thermal expansion coefficient is about 5.5 multiplied by 10)-7℃-1) The quartz crystal resonance layer 7 is made of X-cut quartz crystal with the thickness of 80-150 μm, and has good piezoelectric property, high quality factor and large thermal expansion coefficient; the first quartz arm 2 and the second quartz arm 3 are arranged along the Z-axis direction of the quartz crystal, and the length of the double-end fixedly-supported quartz tuning fork 12 is arranged along the Y-axis direction of the quartz crystal.
Electrode material layers are arranged on the surfaces of the first quartz beam 13, the second quartz beam 14, the first pressure welding block 8 and the second pressure welding block 9, and the electrode material layers are chromium-gold (Cr/Au) layers and have low ohmic impedance.
Referring to fig. 3 and 4, when the beam is bent, one side of the material is elongated, the other side of the material is shortened, and a material layer which is neither elongated nor shortened is called a neutral layer between the elongation and the shortening; the positive and negative electrodes are respectively arranged on two sides of the neutral layers on the upper and lower surfaces of the first quartz beam 13 and the second quartz beam 14, and the direction of the electric field is along the thickness direction of the first quartz beam 13 and the second quartz beam 14, namely the X-axis direction of the quartz crystal; the directions of electric fields on two sides of the neutral layer are opposite, under the action of a piezoelectric effect, one side of the neutral layer of the first quartz beam 13 is extended along the Y-axis direction, the other side of the neutral layer is shortened along the Y-axis direction, the quartz beam is bent towards one side, when the direction of the electric field is changed, the bending direction is also opposite, so that a bending vibration mode is synthesized, the vibration direction is along the width direction of the quartz beam, the bending direction of the second quartz beam 14 is opposite to that of the first quartz beam 13, as shown by dotted lines in figure 3, the cutting type and electrode configuration mode can ensure that the excitation electric field force is matched with the internal stress when the quartz beam is bent, so that the tuning fork has high electromechanical coupling coefficient and excitation force, the double-end fixed support quartz can be driven to work in an in-plane bending reverse-phase vibration mode, and the vibration energy loss of the sensor is ensured to be small, and the quality factor is high.
Referring to fig. 5, a diamond-shaped force amplifying structure comprises 4 rectangular beams of equal length, having long diagonal lines and short diagonal lines; when force F1When acting on two ends of a diagonal line of the diamond ring 10, a force F is set1The acute angle between the rectangular beam and the rectangular beam is alpha, and the acting force on the other diagonal is F2＝F1tan α; when force F1When acting on the short diagonal of the diamond ring 10, alpha is more than 45 DEG, F2＞F1The diamond ring 10 has a force amplification effect, so that the quartz arm is arranged in the short diagonal direction of the diamond ring 10, the double-end fixedly-supported quartz tuning fork 12 is arranged in the long diagonal direction of the diamond ring 10, the purpose of amplifying the axial stress of the quartz arm is achieved, the axial stress borne by the first quartz beam 13 and the second quartz beam 14 is improved, the change of the resonant frequency along with the temperature is further improved, and the sensitivity of the sensor is improved.
When the ambient temperature is from T0When the temperature becomes T, the two ends of the quartz arm are restrained by the fixed supports, so that the thermal stress is generated due to the temperature change, and the axial stress in the quartz arm can be approximated as:
in the formula: sigma1Shaft in Quartz armStress; e1-the elastic modulus of the quartz crystal resonance layer; v is1-poisson's ratio of the quartz crystal resonance layer; alpha is alpha1-the coefficient of thermal expansion of the quartz crystal resonant layer in the z-direction; e2The modulus of elasticity of the quartz glass annular susceptor; v is2-poisson's ratio of the quartz glass annular base; alpha (alpha) ("alpha")2-the thermal expansion coefficient of the quartz glass annular base; d is the thickness of the quartz glass annular base; t-the thickness of the quartz arm.
After the axial stress in the quartz arm passes through the diamond force amplifying structure, the axial stress in the double-end fixed support quartz beam is as follows:
in the formula: sigma2-axial stress in a double clamped quartz beam; w is a1-the effective width of the quartz arm; w is a2-the effective width of the double clamped quartz beam; alpha is the acute angle between the quartz arm and the diamond ring.
The force-frequency sensitivity coefficient S between the resonance frequency and the axial stress of the double-end clamped quartz beam can be approximated as follows:
in the formula: l is the effective length of the double-end clamped quartz beam; w is a2The effective width of the double clamped quartz beam.
The approximate calculation formula of the sensitivity of the double-end clamped quartz beam resonance frequency change caused by the temperature change can be obtained by the combination formulas (1), (2) and (3) as follows:
as can be seen from equation (4): axial stress sigma in a quartz arm caused by temperature changes1The larger the axial stress σ in the quartz beam2The larger the size of the tube is,sensitivity Δ f to resonant frequency changes due to temperature changes0The larger the/Δ T. The invention introduces a diamond-shaped force amplification structure, further amplifies the axial stress on the quartz arm and acts on the first quartz beam 13 and the second quartz beam 14, further amplifies the axial stress of the quartz beams, and further greatly improves the sensitivity of the resonance frequency of the sensor along with the temperature change, thereby realizing the purpose of high-sensitivity temperature measurement.
The working principle of the invention is as follows:
the sensitivity of the resonant frequency of the double-ended quartz tuning fork changing along with the temperature is related to the magnitude of the axial stress applied to the double-ended quartz tuning fork, and the larger the axial stress applied to the double-ended quartz tuning fork, the higher the sensitivity of the resonant frequency changing along with the temperature is. The quartz crystal resonance layer 7 is fixed on the quartz glass annular base 6 through the anchor point, because of the difference of the thermal expansion coefficients of the materials of the quartz crystal resonance layer 7 and the quartz glass annular base 6, the thermal expansion deformation caused by temperature change generates larger axial stress in the quartz arms with fixed two ends, the stress is amplified by the diamond ring 10 and then acts on two ends of the quartz tuning fork 12 with fixed two ends, the axial stress of the first quartz beam 13 and the second quartz beam 14 is increased, the sensitivity of the resonance frequency of a pair of quartz beams along with the temperature change is greatly improved, through ANSYS simulation analysis, the resonance frequency of the quartz tuning fork can reach thousands of hertz per degree centigrade along with the temperature change, the sensitivity is obviously improved, and the high-sensitivity measurement of temperature signals is realized by sensing the change of the resonance frequency of the quartz beams.
Claims (5)
1. A high-sensitivity MEMS resonant temperature sensor chip is characterized in that: comprises a quartz glass annular base (6) and a quartz crystal resonance layer (7);
the quartz crystal resonance layer (7) comprises a rhombic force amplification resonator (1), a first quartz arm (2), a second quartz arm (3), a first anchor point (4) and a second anchor point (5); the first anchor point (4) and the second anchor point (5) are symmetrically arranged on a quartz glass annular base (6), one end of the first quartz arm (2) is connected with the first anchor point (4), the other end of the first quartz arm is connected with one corner of a rhombic ring (10) of the rhombic force amplification resonator (1), one end of the second quartz arm (3) is connected with the second anchor point (5), and the other end of the second quartz arm is connected with the other corner of the rhombic ring (10) of the rhombic force amplification resonator (1) which is symmetrical; the first anchor point (4), the first quartz arm (2), the second quartz arm (3) and the second anchor point (5) are positioned on the short diagonal line of the diamond-shaped ring (10);
the rhombic force amplifying resonator (1) comprises a rhombic ring (10) and a double-ended clamped quartz tuning fork (12), wherein the double-ended clamped quartz tuning fork (12) comprises a first quartz beam (13) and a second quartz beam (14); the first quartz beam (13) and the second quartz beam (14) are parallel, two ends of the first quartz beam are respectively connected with the diamond-shaped ring (10) through the isolator (11), and the quartz tuning fork (12) fixedly supported by two ends is positioned on the long diagonal line of the diamond-shaped ring (10);
a first electrode (15) and a second electrode (16) are respectively distributed on the top surface and the bottom surface of the first quartz beam (13), and a first electrode (15) and a second electrode (16) are respectively distributed on the top surface and the bottom surface of the second quartz beam (14); a first electrode (15) on the first quartz beam (13) is connected with a first electrode (15) on the second quartz beam (14) in series, and is led out through a diamond ring (10) and a second quartz arm (3) to be connected with a first pressure welding block (8) on the second anchor point (5); a second electrode (16) on the first quartz beam (13) is connected with a second electrode (16) on the second quartz beam (14) in series, and is led out through a diamond ring (10) and a second quartz arm (3) to be connected with a second pressure welding block (9) on a second anchor point (5);
thermal expansion deformation caused by temperature change generates larger axial stress in the first quartz arm (2) and the second quartz arm (3), the larger axial stress is amplified by the diamond-shaped ring (10) and acts on two ends of the double-end-clamped quartz tuning fork (12), the stress in the pair of quartz beams is increased, and high-sensitivity measurement on the temperature change is realized by sensing the change of the resonant frequency of the first quartz beam (13) and the second quartz beam (14).
2. The high-sensitivity MEMS resonant temperature sensor chip as claimed in claim 1, wherein: the first anchor point (4), the second anchor point (5) and the quartz glass annular base (6) are aligned and bonded together through an alignment mark (17).
3. The high-sensitivity MEMS resonant temperature sensor chip as claimed in claim 1The method is characterized in that: the quartz glass annular base (6) is made of quartz glass and has a thermal expansion coefficient of about 5.5 multiplied by 10-7℃-1The thickness is 100-200 μm.
4. The high-sensitivity MEMS resonant temperature sensor chip as claimed in claim 1, wherein: the quartz crystal resonance layer (7) is made of X-cut quartz crystal, and the Z-direction thermal expansion coefficient is 7.1 multiplied by 10-6℃-1The thickness is 80-150 μm; the first quartz arm (2) and the second quartz arm (3) are arranged along the Z-axis direction of the quartz crystal, and the length of the double-end fixedly-supported quartz tuning fork (12) is arranged along the Y-axis direction of the quartz crystal.
5. The high-sensitivity MEMS resonant temperature sensor chip as claimed in claim 1, wherein: and chromium-gold layer electrode materials are arranged on the surfaces of the first quartz beam (13), the second quartz beam (14), the first press welding block (8) and the second press welding block (9).
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| CN115655505B (en) * | 2022-12-29 | 2023-04-28 | 常州奇军苑传感技术有限公司 | Quartz tuning fork temperature sensor with torsional mode |
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| US7956517B1 (en) * | 2007-05-10 | 2011-06-07 | Silicon Laboratories | MEMS structure having a stress inverter temperature-compensated resonator member |
| CN102798732A (en) * | 2011-05-24 | 2012-11-28 | 精工爱普生株式会社 | Acceleration sensor and acceleration detection apparatus |
| CN110311649A (en) * | 2019-06-27 | 2019-10-08 | 瑞声科技（南京）有限公司 | A kind of differential resonance device and MEMS sensor |
| CN110501098A (en) * | 2019-09-20 | 2019-11-26 | 合肥工业大学 | A kind of highly sensitive micro-pressure sensor based on double pressure membranes and weak coupling resonator system |
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