CN105737811A - Resonant type MEMS full-scale inclination angle sensor - Google Patents
Resonant type MEMS full-scale inclination angle sensor Download PDFInfo
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- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
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Abstract
The invention provides an MEMS resonant type full-scale inclination angle sensor which comprises a single crystal silicon substrate, a silicon dioxide insulating layer is grown on the single crystal silicon substrate, a single crystal silicon structural layer is arranged on the silicon dioxide insulating layer, the center of the single crystal silicon structural layer is provided with a suspended polygon mass block, the mass block is connected with the tail ends of double-end fixed resonant tuning forks through three or more pairs of micro amplification girders, the micro amplification girders and the double-end fixed resonant tuning forks are evenly distributed in a radial mode, the two sides of each double-end fixed resonant tuning fork are provided with a drive end and a detection end respectively, the double-end fixed resonant tuning forks are in electrostatic coupling to the drive ends and the detection ends, and the top ends of the double-end fixed resonant tuning forks are connected with electrodes.According to the MEMS resonant type full-scale inclination angle sensor, the micro amplification girders are utilized, sensitivity of the sensor is effectively improved, and measuring precision is improved; the double-end fixed resonant tuning forks which are distributed uniformly are adopted, and full-scale high-precision measurement can be achieved through an algorithm.
Description
Technical field
The present invention relates to obliquity sensor technical field, particularly to a kind of resonant mode MEMS gamut obliquity sensor.
Background technology
MEMS (MicroElectronMechanicalSystem is called for short MEMS) technology grows up in microelectric technique (semiconductor fabrication).As a part for MEMS technology, based on the agitator of silicon micro mechanic resonator, there is frequency stable, noise is low, the performance that is easily integrated, thus be commonly used for various kinds of sensors.
In recent years, along with sustainable growth for miniature high-precision obliquity sensor demand in the industries such as Aero-Space, automobile, domestic electronic, the kind of obliquity sensor and inclination measuring system is also increasing.Although these obliquity sensors have different structures and characteristic, but its operation principle is substantially the same, and namely the sensitive-mass element " pendulum " in sensor always attempts to be stably held in vertical in gravitational field, calculates inclination angle by measuring the skew of " pendulum ".Difference according to sensitive-mass element, it is possible to obliquity sensor is divided into " solid pendulum " formula, " liquid pendulum " formula and " Liquid Pendulum " formula, referring to example: US20130160547；US20140082953；US20100001360；US6516527；US005237753A.These sensors are the sensitiveest when being in gravity vertical direction, and least sensitive when being parallel to gravity direction, thus existing obliquity sensor major part can not realize the high-acruracy survey of gamut；Small part can realize the obliquity sensor of gamut measurement again it cannot be guaranteed that higher precision, therefore limits its range of application and practicality.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, it is an object of the invention to provide a kind of resonant mode MEMS gamut obliquity sensor, it is achieved the gamut of plane leaning angle, high-acruracy survey.
For reaching above-mentioned purpose, the technical solution adopted in the present invention is:
A kind of MEMS resonant formula gamut obliquity sensor, including monocrystal silicon substrate 1, monocrystal silicon substrate 1 grows layer of silicon dioxide insulating barrier 2, and silicon dioxide insulating layer 2 is provided with monocrystal silicon structure layer 3；
The center of monocrystal silicon structure layer 3 is provided with the polygonal mass 10 of suspension, mass 10 is connected with the end of the fixing resonant tuning fork 12 of both-end respectively by least three pairs of micro-amplification beams 11, micro-amplification beam 11, the fixing resonant tuning fork 12 of both-end is radially uniformly distributed, the both sides of the fixing resonant tuning fork 12 of both-end are provided with drive end 13 and test side 14, the fixing resonant tuning fork 12 of both-end and drive end 13, test side 14 electrostatic coupling, the top of the fixing resonant tuning fork 12 of both-end connects with electrode 15, fixing resonant tuning fork 12 limit corresponding with mass 10 of both-end is vertical, micro-amplification beam 11 limit corresponding with mass 10 is parallel, three is in approximately the same plane, when application, this plane normal direction is vertical with gravity direction.
nullThe input beam 11-1 of described micro-amplification beam 11 both sides is attached to mass 10，Fulcrum 11-2 in the middle part of micro-amplification beam 11 is fixed on the first fixing end 13-1 of drive end 13 or the second fixing end 14-1 of test side 14，On first fixing end 13-1 and the second fixing end 14-1, deposition has the first metal electrode layer 13-2 and the second metal electrode layer 14-2 respectively，The output beam 11-3 of micro-amplification beam 11 is attached to the end of the resonance beam 12-1 of the fixing resonant tuning fork 12 of both-end，The head end of resonance beam 12-1 is fixed on the fixing end 15-1 of top，The both sides of resonance beam 12-1 are connected to the second electric capacity flat board 12-2，The outside of two the second electric capacity flat board 12-2 is respectively equipped with the first electric capacity flat board 13-3 and the three electric capacity flat board 14-3，Second electric capacity flat board 12-2 and the first electric capacity flat board 13-3、3rd electric capacity flat board 14-3 electrostatic coupling，First electric capacity flat board 13-3 and the three electric capacity flat board 14-3 is separately fixed on the first fixing end 13-1 and the second fixing end 14-1，On the fixing end 15-1 of top, deposition has the 3rd metal electrode layer 15-2.
The fixing resonant tuning fork 12 of described both-end is placed in the oscillating circuit with automatic growth control, oscillating circuit includes amplifier 16-1, band filter 16-2 and comparator 16-3, 3rd metal electrode layer 15-2 passes into voltage, DC voltage bias is provided for the fixing resonant tuning fork 12 of both-end, the AC signal produced by fixing resonant tuning fork 12 resonance of both-end is through amplifier 16-1, after band filter 16-2 and comparator 16-3 processes, feed back to drive end 13 on the one hand, ensure the continuous-stable vibration of closed loop test circuit, output measures frequency to frequency measuring equipment 16-4 on the other hand.
The side size range of described mass 10 is 1000um-2000um.
The resonance beam 12-1 length range of the fixed tuning fork resonator 12 of described both-end is 200um-500um, and width range is 2um-5um.
Described electric capacity flat board length range is 100um-250um, and width range is 2um-5um.
The distance of the fulcrum 11-2 of described micro-amplification beam 11 to input beam 11-1 ranges for 10-100 times with it to the distance ratio exporting beam 11-3.
Described monocrystal silicon substrate 1 and silicon dioxide insulating layer 2 process etched hole, ensureing the unsettled of the fixing resonant tuning fork 12 of mass 10, micro-amplification beam 11 and both-end, its part not etched ensure that the fixing of end 15-1 is fixed at the first fixing end 13-1, the second fixing end 14-1 and top.
Described monocrystal silicon structure layer 3 is by the complete manufacture of single semiconductor wafer, by surface micro-fabrication technology or etching technics manufacture.
The invention have the benefit that
Based on the sensor of silicon micro-resonator, highly sensitive, wide dynamic range, it is easily integrated；Utilize micro-amplification beam 11, effectively increase the sensitivity of device, improve certainty of measurement；Adopt equally distributed both-end to fix resonant tuning fork 12, the high-acruracy survey of gamut can be realized by algorithm.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the top view of the monocrystal silicon structure layer 3 of the present invention.
Fig. 3 is the measuring circuit schematic diagram of the present invention.
Fig. 4 is the simulation data figure of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Referring to Fig. 1, a kind of MEMS resonant formula gamut obliquity sensor, including monocrystal silicon substrate 1, whole device is played a supporting role by monocrystal silicon substrate 1, monocrystal silicon substrate 1 grows layer of silicon dioxide insulating barrier 2, growth thickness ranges for 2-3um, and silicon dioxide insulating layer 2 is provided with monocrystal silicon structure layer 3, and monocrystal silicon structure layer 3 thickness range is 10-40um；
Referring to Fig. 2, the center of monocrystal silicon structure layer 3 is provided with the polygonal mass 10 of suspension, mass 10 is connected by the fixing resonant tuning fork 12 of three pairs of micro-amplification beams 11 and both-end, the fixing resonant tuning fork 12 of micro-amplification beam 11, both-end is radially uniformly distributed, and micro-amplification beam 11 is for transmitting and amplify the tension force that mass 10 gives.The both sides of the fixing resonant tuning fork 12 of both-end are provided with drive end 13 and test side 14, and both-end fixes resonant tuning fork 12 and drive end 13, test side 14 electrostatic coupling, and drive end 13 is identical with the structure of test side 14, it is possible to mutually replace.The top of the fixing resonant tuning fork 12 of both-end connects with electrode 15, and electrode 15 provides DC voltage bias to the fixing resonant tuning fork 12 of both-end.Fixing resonant tuning fork 12 limit corresponding with mass 10 of both-end is vertical, and micro-amplification beam 11 limit corresponding with mass 10 is parallel, and three is in approximately the same plane, in use, this plane normal direction is vertical with gravity direction；
nullReferring to Fig. 2，The input 11-1 of described micro-amplification beam 11 is attached to mass 10，And as the support of mass 10，Fulcrum 11-2 in the middle part of micro-amplification beam 11 is fixed on the first fixing end 13-1 of drive end 13 or the second fixing end 14-1 of test side 14，On first fixing end 13-1 and the second fixing end 14-1, deposition has the first metal electrode layer 13-2 and the second metal electrode layer 14-2 respectively，The output beam 11-3 of micro-amplification beam 11 is attached to the end of the resonance beam 12-1 of the fixing resonant tuning fork 12 of both-end，The head end of resonance beam 12-1 is fixed on top fixing end 15-1，The both sides of resonance beam 12-1 are connected to the second electric capacity flat board 12-2，The outside of two the second electric capacity flat board 12-2 is respectively equipped with the first electric capacity flat board 13-3 and the three electric capacity flat board 14-3，Second electric capacity flat board 12-2 and the first electric capacity flat board 13-3、3rd electric capacity flat board 14-3 electrostatic coupling，First electric capacity flat board 13-3 and the three electric capacity flat board 14-3 is separately fixed on the first fixing end 13-1 and the second fixing end 14-1，On the fixing end 15-1 of top, deposition has the 3rd metal electrode layer 15-2；
Referring to Fig. 3, the fixing resonant tuning fork 12 of described both-end is placed in the oscillating circuit with automatic growth control, oscillating circuit includes amplifier 16-1, band filter 16-2 and comparator 16-3, the second metal electrode layer 15-2 passes into voltage and provides DC voltage bias for the fixing resonant tuning fork 12 of both-end.The AC signal produced by fixing resonant tuning fork 12 resonance of both-end is after amplifier 16-1, band filter 16-2 and comparator 16-3 process, feed back to drive end 13 on the one hand, ensureing the continuous-stable vibration of closed loop test circuit, output measures frequency to frequency measuring equipment 16-4 on the other hand.
The operation principle of the present invention is:
Mass 10 produces the displacement towards gravity direction due to gravity, the stress three pairs of micro-amplification beams 11 being produced or pressing or draw simultaneously, the micro-amplification beam 11 being stressed produces bending around its fulcrum 11-2 and reverses, transmit and amplify suffered stress on resonance beam 12-1, change the internal stress of the fixing resonant tuning fork 12 of both-end, and then change its natural frequency；The fixing resonant tuning fork 12 of each both-end is applied to the alternating voltage of the first electric capacity flat board 13-3 to drive by drive end 13, when executing alive frequency and being identical with the natural frequency of the fixing resonant tuning fork 12 of both-end, its vibration is the most obvious, now the 3rd electric capacity flat board 14-3 of side, test side 14 receives this vibration signal, and record natural frequency now, owing to natural frequency value is certain relation with the value being subject to axial stress, can by calculating the inclination value of now sensor after recording natural frequency；The external circuits of three fixing resonant tuning forks 12 of both-end is all identical, and works simultaneously, and when the inclination value of total system changes, owing to the rigidity of the fixing resonant tuning fork 12 of both-end changes, its resonant frequency also changes.
When designing structure and being identical with crystal orientation, three fixing resonant tuning forks 12 of both-end have identical characteristic frequency, but according to anisotropic material, three there are both natural frequencies close, another one frequency natural frequency differs farther out, three crystal orientation can be allowed in the design identical with structure, it is achieved the sensitivity in plane is identical.According to theory, when being subject to axial force, the natural frequency of double-ended tuning fork 12 and the relation of axial force can be expressed as:
In formula, l is the length (m) of prong, and I is the cross sectional moment of inertia (m of prong4), E is the elastic modelling quantity (Pa) of silicon, and d is the density (kg/m of silicon3), A is the area of section (m of prong2), P acts on the axial force on prong, P take when being pulling force on the occasion of, P takes negative value when being pressure, i is the exponent number of mode of oscillation, and mode of oscillation during work is second order.
Before measuring, reply system is demarcated, and specific works process is as follows:
When sensor place plane is vertical with gravity direction, tested by closed loop circuit, it is possible to record the natural frequency of the fixing resonant tuning fork 12 of three both-ends respectively；
Referring to Fig. 2, A, B, C tri-place be respectively equipped with the fixing resonant tuning fork 12 of a both-end.When sensor is subject to the gravity in perpendicular, mass 10 by fixing for Stress Transfer to both-end resonant tuning fork 12 and changes its natural frequency by micro-amplification beam 11.Allow sensor planar rotate a circle, record A, B, C tri-change curve of fixing resonant tuning fork 12 natural frequency of both-end at place respectively, and remember maximum, minima respectively famax、famin、fbmax、fbmin、fcmax、fcmin；
Due to foozle, the natural frequency of three fixing resonant tuning forks 12 of both-end is incomplete same, it is necessary to three is standardized, and formula is:
F in formulanormFor the normalized frequency of the fixing resonant tuning fork 12 of this both-end, its value fluctuates between (-1,1), and f is frequency measurement, favgFor the median frequency of the fixing resonant tuning fork 12 of this both-end, fppFrequency peak peak value for the fixing resonant tuning fork 12 of this both-end；
Referring to Fig. 4, making sensor planar rotate a circle, the waveform of three fixing resonant tuning fork 12 normalized frequency of both-end is sine curve, and every sine curve phase contrast is 120 °, and within the scope of 0-360 °, random angle angle value has a distinctive (fa, fb, fc) combination correspondence with it；
When fixing resonant tuning fork 12 direction of both-end is identical with gravity direction, its natural frequency reaches maximum, when its direction is contrary with gravity direction, its natural frequency reaches minima, and when the direction of the fixing resonant tuning fork 12 of a both-end is identical with gravity direction or contrary, the fixing resonant tuning fork 12 of this both-end is least sensitive；When its direction is vertical with gravity direction, its natural frequency and median frequency favgIdentical, now the fixing resonant tuning fork 12 of this both-end is the sensitiveest；
Referring to Fig. 4, can differentiating that the fixing resonant tuning fork 12 of which both-end is in most sensitive area by normalized frequency value, now adopt the output valve of the fixing resonant tuning fork 12 of this both-end, degree of accuracy is the highest, and concrete decision method is:
Work as fcnorm<fanorm<fbnormOr fbnorm<fanorm<fcnormTime, it is determined that the fixing resonant tuning fork 12 of the both-end at A place is in sensitive area, works as fanorm<fbnorm<fcnormOr fcnorm<fbnorm<fanormTime, it is determined that the fixing resonant tuning fork 12 of the both-end at B place is in sensitive area, works as fbnorm<fcnorm<fanormOr fanorm<fcnorm<fbnormTime, it is determined that the fixing resonant tuning fork 12 of the both-end at C place is in sensitive area.Constructed by sensor it can be seen that synchronization has and only has the fixing resonant tuning fork 12 of a both-end is in sensitive area；Utilizing the natural frequency value of the fixing resonant tuning fork 12 of both-end in sensitive range, calculate inclination value this moment, computing formula is as follows:
θ=sin-1(fnorm)
F in formulanormFor the normalized frequency value of the fixing resonant tuning fork 12 of both-end now at sensitive area, angle, θ is the value between (-30 ° ,+30 °).At work, could dictate that when the axial direction of the fixing resonant tuning fork 12 of the both-end at A place is identical with gravity direction as initial zero-bit, so, the fixing resonant tuning fork 12 of the both-end at A place is at (60 °, 120 °) ∪ (240 °, 300 °) region is sensitive, the fixing resonant tuning fork 12 of the both-end at B place is at (0 °, 60 °) ∪ (180 °, 240 °) region is sensitive, and the fixing resonant tuning fork 12 of the both-end at C place is at (120 °, 180 °) ∪ (300 °, 360 °) region is sensitive, can obtain inclination value by converting.
In application, the position symmetrical with the fixing resonant tuning fork 12 of above-mentioned micro-amplification beam 11 and both-end can be further added by a pair micro-amplification beam 11 and a fixing resonant tuning fork 12 of both-end respectively, the fixing resonant tuning fork 12 of symmetrical both-end can realize the difference measurement of angle, eliminates the impact of the extraneous factors such as temperature；Six pairs of micro-amplification beams 11 are higher to the fixation of mass 10, promote whole device resistance to impact.
Claims (9)
1. a MEMS resonant formula gamut obliquity sensor, including monocrystal silicon substrate (1), monocrystal silicon substrate (1) upper growth layer of silicon dioxide insulating barrier (2), silicon dioxide insulating layer (2) is provided with monocrystal silicon structure layer (3), it is characterised in that:
nullThe center of monocrystal silicon structure layer (3) is suspended with polygonal mass (10)，Mass (10) is connected with the end of the fixing resonant tuning fork (12) of both-end respectively by least three pairs of micro-amplification beams (11)，Micro-amplification beam (11)、Both-end is fixed resonant tuning fork (12) and is radially uniformly distributed，Both-end is fixed the both sides of resonant tuning fork (12) and is provided with drive end (13) and test side (14)，Both-end fixes resonant tuning fork (12) and drive end (13)、Test side (14) electrostatic coupling，Both-end is fixed the top of resonant tuning fork (12) and is connected with stationary electrode (15)，It is vertical with mass (10) corresponding limit that both-end fixes resonant tuning fork (12)，Micro-amplification beam (11) is parallel with mass (10) corresponding limit，Three is in approximately the same plane，When application，This plane normal direction is vertical with gravity direction.
null2. a kind of MEMS resonant formula gamut obliquity sensor according to claim 1，It is characterized in that: the input beam (11-1) of described micro-amplification beam (11) is attached to mass (10)，The fulcrum (11-2) at micro-amplification beam (11) middle part is fixed on the second fixing end (14-1) of the first fixing end (13-1) or test side (14) of drive end (13)，On first fixing end (13-1) and the second fixing end (14-1), deposition has the first metal electrode layer (13-2) and the second metal electrode layer (14-2) respectively，The output beam (11-3) of micro-amplification beam (11) is attached to the end of the resonance beam (12-1) of the fixing resonant tuning fork (12) of both-end，The head end of resonance beam (12-1) is fixed on the fixing end (15-1) in top，The both sides of resonance beam (12-1) are connected to the second electric capacity flat board (12-2)，The outside of two the second electric capacity flat boards (12-2) is respectively equipped with the first electric capacity flat board (13-3) and the 3rd electric capacity flat board (14-3)，Second electric capacity flat board (12-2) and the first electric capacity flat board (13-3)、3rd electric capacity flat board (14-3) electrostatic coupling，First electric capacity flat board (13-3) and the 3rd electric capacity flat board (14-3) are separately fixed on the first fixing end (13-1) and the second fixing end (14-1)，The top upper deposition of fixing end (15-1) has the 3rd metal electrode layer (15-2).
null3. a kind of MEMS resonant formula gamut obliquity sensor according to claim 1，It is characterized in that: described both-end is fixed resonant tuning fork (12) and is placed in the oscillating circuit with automatic growth control，Oscillating circuit includes amplifier (16-1)、Band filter (16-2) and comparator (16-3)，Passing into voltage on 3rd metal electrode layer (15-2) is that the fixing resonant tuning fork (12) of both-end provides direct current biasing，The AC signal produced by fixing resonant tuning fork (12) resonance of both-end is through amplifier (16-1)、After band filter (16-2) and comparator (16-3) process，Feed back to drive end (13) on the one hand，Ensure the continuous-stable vibration of closed loop test circuit，Output measures frequency to frequency measuring equipment (16-4) on the other hand.
4. a kind of MEMS resonant formula gamut obliquity sensor according to claim 1, it is characterised in that: the side size range of described mass (10) is 1000um-2000um.
5. a kind of MEMS resonant formula gamut obliquity sensor according to claim 1, it is characterized in that: resonance beam (12-1) length range of the fixed tuning fork resonator of described both-end (12) is 200um-500um, and width range is 2um-5um.
6. a kind of MEMS resonant formula gamut obliquity sensor according to claim 2, it is characterised in that: described electric capacity flat board length range is 100um-250um, and width range is 2um-5um.
7. a kind of MEMS resonant formula gamut obliquity sensor according to claim 1, it is characterised in that: the fulcrum (11-2) of described micro-amplification beam (11) reaches 10-100 times with it to the distance ratio scope exporting beam (11-3) to the distance of input beam (11-1).
8. a kind of MEMS resonant formula gamut obliquity sensor according to claim 1, it is characterized in that: in described monocrystal silicon substrate (1) and silicon dioxide insulating layer (2), process etched hole, ensureing that mass (10), micro-amplification beam (11) and both-end fix the unsettled of resonant tuning fork (12), its part not etched ensure that the fixing of end (15-1) is fixed at the first fixing end (13-1), the second fixing end (14-1) and top.
9. a kind of MEMS resonant formula gamut obliquity sensor according to claim 1, it is characterised in that: described monocrystal silicon structure layer (3) is by the complete manufacture of single semiconductor wafer, by surface micro-fabrication technology or etching technics manufacture.
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| CN106645999A (en) * | 2016-09-20 | 2017-05-10 | 西北工业大学 | Micro-mechanical resonant electrometer with ultra-high sensitivity |
| CN106525304A (en) * | 2016-12-12 | 2017-03-22 | 西安交通大学 | MEMS resonant torque sensor used for linear micro-nano material torsion performance measurement |
| CN106525304B (en) * | 2016-12-12 | 2018-12-18 | 西安交通大学 | A kind of line style micro-nano material twisting property measurement MEMS resonant formula torque sensor |
| CN107179046A (en) * | 2017-04-10 | 2017-09-19 | 西安交通大学 | A kind of frequency detecting method and its obliquity sensor based on resonator synchronized oscillation |
| WO2018188382A1 (en) * | 2017-04-10 | 2018-10-18 | 西安交通大学 | Frequency detection method based on synchronous oscillation of resonator, and tilt sensor |
| CN107179046B (en) * | 2017-04-10 | 2020-03-17 | 西安交通大学 | Frequency detection method based on synchronous oscillation of resonator and tilt angle sensor thereof |
| CN107132918A (en) * | 2017-04-26 | 2017-09-05 | 东南大学 | Head control type body-sensing mouse |
| CN107505281A (en) * | 2017-07-25 | 2017-12-22 | 西安交通大学 | A kind of THz wave detector based on silicon micro-resonator |
| CN107515311A (en) * | 2017-08-18 | 2017-12-26 | 西安交通大学 | A kind of mems accelerometer based on synchronous resonant frequency detecting |
| CN107515311B (en) * | 2017-08-18 | 2019-05-21 | 西安交通大学 | A kind of mems accelerometer based on synchronous resonant frequency detecting |
| CN107655453A (en) * | 2017-09-18 | 2018-02-02 | 东南大学 | A kind of multi-direction silicon micro-resonance type obliquity sensor of gamut |
| CN110986908A (en) * | 2019-12-16 | 2020-04-10 | 武汉大学 | Elliptical resonant mode piezoelectric MEMS (micro-electromechanical systems) ring gyroscope |
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Application publication date: 20160706 |