CN110854087A - 一种具有调节结构的可散热式双基岛dsop芯片用封装结构 - Google Patents
一种具有调节结构的可散热式双基岛dsop芯片用封装结构 Download PDFInfo
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- CN110854087A CN110854087A CN201911182245.XA CN201911182245A CN110854087A CN 110854087 A CN110854087 A CN 110854087A CN 201911182245 A CN201911182245 A CN 201911182245A CN 110854087 A CN110854087 A CN 110854087A
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 11
- 238000004806 packaging method and process Methods 0.000 title abstract description 18
- 229910000838 Al alloy Inorganic materials 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000013459 approach Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
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CN201911182245.XA CN110854087B (zh) | 2019-11-27 | 2019-11-27 | 一种具有调节结构的可散热式双基岛dsop芯片用封装机构 |
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CN201911182245.XA CN110854087B (zh) | 2019-11-27 | 2019-11-27 | 一种具有调节结构的可散热式双基岛dsop芯片用封装机构 |
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CN110854087A true CN110854087A (zh) | 2020-02-28 |
CN110854087B CN110854087B (zh) | 2021-10-01 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113838826A (zh) * | 2020-06-23 | 2021-12-24 | 华邦电子股份有限公司 | 封装结构及其制造方法 |
CN117712057A (zh) * | 2024-02-06 | 2024-03-15 | 成都汉芯国科集成技术有限公司 | 一种多级金刚石抗辐射过载的芯片封装结构及封装方法 |
Citations (7)
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US20010024553A1 (en) * | 2000-03-22 | 2001-09-27 | Hiromi Nakanishi | Optical module |
CN1725518A (zh) * | 2005-06-24 | 2006-01-25 | 南京汉德森半导体照明有限公司 | 新型大功率半导体发光二极管封装基座 |
CN103435001A (zh) * | 2013-08-05 | 2013-12-11 | 天水华天微电子股份有限公司 | 混合集成电路装置及封装方法 |
CN104979221A (zh) * | 2014-04-01 | 2015-10-14 | 富士电机株式会社 | 半导体装置的制造方法及半导体装置 |
CN106997871A (zh) * | 2016-12-23 | 2017-08-01 | 杨杰 | 一种功率模块的封装结构 |
CN208063157U (zh) * | 2018-06-29 | 2018-11-06 | 深圳市合讯电子有限公司 | 一种分层塑料式晶振封装壳 |
CN110289245A (zh) * | 2019-05-09 | 2019-09-27 | 北京新雷能科技股份有限公司 | 一种混合集成电路的三维封装结构及其制作方法 |
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2019
- 2019-11-27 CN CN201911182245.XA patent/CN110854087B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010024553A1 (en) * | 2000-03-22 | 2001-09-27 | Hiromi Nakanishi | Optical module |
CN1725518A (zh) * | 2005-06-24 | 2006-01-25 | 南京汉德森半导体照明有限公司 | 新型大功率半导体发光二极管封装基座 |
CN103435001A (zh) * | 2013-08-05 | 2013-12-11 | 天水华天微电子股份有限公司 | 混合集成电路装置及封装方法 |
CN104979221A (zh) * | 2014-04-01 | 2015-10-14 | 富士电机株式会社 | 半导体装置的制造方法及半导体装置 |
CN106997871A (zh) * | 2016-12-23 | 2017-08-01 | 杨杰 | 一种功率模块的封装结构 |
CN208063157U (zh) * | 2018-06-29 | 2018-11-06 | 深圳市合讯电子有限公司 | 一种分层塑料式晶振封装壳 |
CN110289245A (zh) * | 2019-05-09 | 2019-09-27 | 北京新雷能科技股份有限公司 | 一种混合集成电路的三维封装结构及其制作方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113838826A (zh) * | 2020-06-23 | 2021-12-24 | 华邦电子股份有限公司 | 封装结构及其制造方法 |
CN117712057A (zh) * | 2024-02-06 | 2024-03-15 | 成都汉芯国科集成技术有限公司 | 一种多级金刚石抗辐射过载的芯片封装结构及封装方法 |
CN117712057B (zh) * | 2024-02-06 | 2024-05-10 | 成都汉芯国科集成技术有限公司 | 一种多级金刚石抗辐射过载的芯片封装结构及封装方法 |
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Denomination of invention: A packaging mechanism with adjustable structure for heat dissipation dual base island DSOP chips Effective date of registration: 20230629 Granted publication date: 20211001 Pledgee: Bank of China Limited by Share Ltd. Qidong branch Pledgor: NANTONG YOURUI SEMICONDUCTOR CO.,LTD. Registration number: Y2023980046315 |
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Date of cancellation: 20231222 Granted publication date: 20211001 Pledgee: Bank of China Limited by Share Ltd. Qidong branch Pledgor: NANTONG YOURUI SEMICONDUCTOR CO.,LTD. Registration number: Y2023980046315 |
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