CN110838497B - 微型发光二极管显示面板及其制作方法 - Google Patents

微型发光二极管显示面板及其制作方法 Download PDF

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CN110838497B
CN110838497B CN201910690576.8A CN201910690576A CN110838497B CN 110838497 B CN110838497 B CN 110838497B CN 201910690576 A CN201910690576 A CN 201910690576A CN 110838497 B CN110838497 B CN 110838497B
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emitting diode
metal layer
light
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陈柏辅
吴逸蔚
陆一民
张炜炽
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract

本发明提供了一种微型发光二极管显示面板及其制作方法，微型发光二极管显示面板包括：薄膜晶体管阵列基板；多个微型发光二极管，间隔设置于所述薄膜晶体管阵列基板上且位于所述显示区域；公共电极，位于所述薄膜晶体管阵列基板上，覆盖所有微型发光二极管且与微型发光二极管电性连接；金属层，位于所述公共电极远离所述微型发光二极管的一侧且电性连接所述公共电极；以及黑色光阻层，位于所述金属层远离所述公共电极的一侧，所述黑色光阻层中开设有贯穿所述黑色光阻层和所述金属层的多个孔洞，每个孔洞正对一个微型发光二极管以使微型发光二极管发出的光能够穿过射出，所述公共电极、所述金属层及所述黑色光阻层设置于显示区域并延伸至边界区域。

Description

微型发光二极管显示面板及其制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种微型发光二极管显示面板及其制作方法。
背景技术
目前，微型发光二极管(micro light emitting diode，简称micro-发光二极管或微型发光二极管)显示面板吸引了公众的关注，微型发光二极管显示面板可兼顾较窄的边框与良好的显示质量。如图1所示，现有的微型发光二极管显示面板100的包括显示区域aa和边界区域na，微型发光二极管显示面板100包括薄膜晶体管阵列基板101、设置于薄膜晶体管阵列基板101上且位于显示区域aa的多个微型发光二极管102、设置于薄膜晶体管阵列基板101上且与微型发光二极管102电性连接的公共电极103及覆盖公共电极103的平坦化层110，在边界区域na制作有通过连接端子108与公共电极103电性连接的导电的走线107，在走线107靠近显示区域aa的一侧设置有驱动微型发光二极管102发光的驱动器109，公共电极103设置于显示区域aa并延伸至边界区域na以与走线107电性连接，为减少公共电极103延伸至边界区域na的面积以降低公共电极103的电阻值，走线107设置具有较大的线宽(图1中所示走线107为沿垂直于其延伸方向的截面图)，边界区域na的宽度也随之增加，进而导致微型发光二极管显示面板100的边框较宽，屏占比较小。
发明内容
本发明第一方面提供一种微型发光二极管显示面板，所述微型发光二极管显示面板包括显示区域和围绕所述显示区域的边界区域，包括：
薄膜晶体管阵列基板；
多个微型发光二极管，间隔设置于所述薄膜晶体管阵列基板上且位于所述显示区域；
公共电极，位于所述薄膜晶体管阵列基板上，覆盖所有微型发光二极管且与所述微型发光二极管电性连接；金属层，位于所述公共电极远离所述微型发光二极管的一侧且电性连接所述公共电极；以及
黑色光阻层，位于所述金属层远离所述公共电极的一侧，所述黑色光阻层中开设有贯穿所述黑色光阻层和所述金属层的多个孔洞，每个孔洞正对一个微型发光二极管以使微型发光二极管发出的光能够穿过射出，所述公共电极、所述金属层及所述黑色光阻层设置于所述显示区域并延伸至所述边界区域。
本发明第二方面提供一种微型发光二极管显示面板的制作方法，包括：
在薄膜晶体管阵列基板上设置多个微型发光二极管，之后在薄膜晶体管阵列基板上形成公共电极，所述公共电极直接电性连接每个微型发光二极管远离所述薄膜晶体管阵列基板的一侧；
在所述公共电极远离所述薄膜晶体管阵列基板的一侧形成金属层；以及
在所述金属层远离所述薄膜晶体管阵列的一侧形成黑色光阻层；
在所述黑色光阻层上开设多个孔洞，每个孔洞贯穿所述黑色光阻层和所述金属层且正对一个微型发光二极管。
本发明提供的微型发光二极管显示面板中公共电极通过金属层与走线电性连接，故而公共电极无需在边界区域延伸得过宽来与走线电性连接，有利于减少公共电极的电阻值，同时走线也可制作得较窄，因而有利于窄边框的实现；由于电流在金属层中的迁移率优于在公共电极中的迁移率，有利于提高电流分布的均匀性，从而提升显示画面的均匀度。本发明还提供了微型发光二极管显示面板的制作方法。
附图说明
为了更清楚地说明本发明实施例/方式技术方案，下面将对实施例/方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例/方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有的微型发光二极管显示面板的剖面示意图。
图2为本发明实施例一的微型发光二极管显示面板的剖面示意图。
图3为本发明实施例二的微型发光二极管显示面板的剖面示意图。
图4为本发明实施例三的微型发光二极管显示面板的剖面示意图。
图5A至图5F为本发明实施例的微型发光二极管显示面板的制作方法的剖面示意图。
主要元件符号说明
Figure BDA0002147746040000031
Figure BDA0002147746040000041
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
为了能够更清楚地理解本发明的上述目的、特征和优点，下面结合附图和具体实施例对本发明进行详细描述。需要说明的是，在不冲突的情况下，本申请的实施例及实施例中的特征可以相互组合。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。
实施例一
如图2所示，本发明实施例一的微型发光二极管显示面板200设有显示区域AA(active area)和围绕显示区域AA的边界区域NA(border area)，边界区域NA设有驱动显示区域AA显示画面的元器件。微型发光二极管显示面板200包括多个微型发光二极管202、薄膜晶体管阵列基板201、公共电极203(common electrode)、金属层204及黑色光阻层205(black photoresist layer)。其中，多个微型发光二极管202间隔设置于薄膜晶体管阵列基板201上且位于显示区域AA；公共电极203位于薄膜晶体管阵列基板201上且覆盖所有微型发光二极管202；导电的金属层204位于公共电极203远离微型发光二极管202的一侧且电性连接公共电极203；以及黑色光阻层205，位于金属层204远离公共电极203的一侧，黑色光阻层205和金属层204中开设有贯穿黑色光阻层205和金属层204的多个孔洞206，每个孔洞206正对一个微型发光二极管202以使微型发光二极管202发出的光能够穿过射出，公共电极203、金属层204及黑色光阻层205设置于显示区域AA并延伸至边界区域NA。
公共电极203由透明导电材料制成(例如，ITO)且连接每个微型发光二极管202的远离薄膜晶体管阵列基板201的一侧(如，图2中公共电极203连接微型发光二极管202的顶端)。在黑色光阻层205中设有多个孔洞206，每个孔洞206贯穿黑色光阻层205及金属层204且正对一个微型发光二极管202，由此微型发光二极管202发出的光束能够通过对应的孔洞206透过黑色光阻层205和金属层204。金属层204可由具有较低电阻值的金属和合金制成，金属层204的材质可例如包括钼(Mo)、铝(Al)、钛(Ti)中的一种或多种。金属层204直接层叠于公共电极203上且与公共电极203电性连接。公共电极203通过金属层204与走线207电性连接，故而公共电极203无需在边界区域NA延伸得过宽来与走线207电性连接，有利于减少公共电极203的电阻值，同时走线207也可制作得较窄，因而有利于窄边框的实现；由于增加了金属层204后公共电极203的覆盖面积可减少，电流在金属层204中的迁移率优于在公共电极203中的迁移率，故增加金属层204有利于提高电流分布的均匀性，从而提升显示画面的均匀度。
黑色光阻层205和金属层204具有相同的图案，换句话说，黑色光阻层205和金属层204具有相同或相似的形状。黑色光阻层205用于减少金属层204的入射光(外界光源)的反射，进而提高显示画面的对比度。黑色光阻层205完全覆盖边界区域NA，光束无法穿过边界区域NA。公共电极203部分覆盖边界区域NA。
微型发光二极管显示面板200的边界区域NA包括与金属层204电性连接的至少一条走线207(bus line)，每条走线207通过一个连接端子208与金属层204电性连接，从而与公共电极203电性连接。连接端子208可例如为铟锡氧化物(Indium Tin Oxide，ITO)。本实施例中，与公共电极203电性连接的金属层204可降低公共电极203的电阻值，因此不需要设置具有较大线宽的走线用以降低电阻。图2中所示的走线207为沿垂直于其延伸方向的截面图，如图2所示，与公共电极203电性连接的走线207具有较小的线宽，图2中的微型发光二极管显示面板200相比图1中的微型发光二极管显示面板100具有较窄的边界区域NA且可降低公共电极203的电阻值。
微型发光二极管显示面板200还包括位于边界区域NA中的驱动器209。本实施例中，在边界区域NA，走线207位于驱动器209和金属层204之间且与驱动器209在垂直于薄膜晶体管阵列基板201的方向上至少部分重叠。驱动器209用于为微型发光二极管202提供驱动电流，金属层204通过走线207与驱动器209电性连接。
薄膜晶体管阵列基板201包括多个薄膜晶体管(薄膜晶体管阵列)(图未示)。在每个微型发光二极管202和薄膜晶体管阵列基板201之间形成有显示电极211，当显示电极211和公共电极203之间存在所需的电势差时，微型发光二极管202发光。
本实施例中，微型发光二极管202至少包括发红光、蓝光和绿光的三种。
微型发光二极管显示面板200还包括位于黑色光阻层205远离金属层204一侧的平坦化层210。平坦化层210完全覆盖显示区域AA和边界区域NA且填充孔洞206，平坦化层210的材质为透明的绝缘材料，例如聚酰亚胺。
实施例二
如图3所示，本发明实施例二提供的微型发光二极管显示面板200和实施例一的微型发光二极管显示面板200大体上相同，不同在于：本实施例中走线207位于驱动器209的上方，具体地位于驱动器209和金属层204之间。因此，相较于实施例一中的微型发光二极管显示面板200，本实施例中的微型发光二极管显示面板200的边界区域NA可制作得更窄，有利于实现微型发光二极管显示面板200的窄边框，改善用户的使用体验。
实施例三
如图4所示，本发明实施例三提供的微型发光二极管显示面板200与实施例一中的微型发光二极管显示面板200大体上相同，不同在于：实施例三中贯穿黑色光阻层205和金属层204的部分孔洞206填充有量子点212(Quantum Dots，QD)，量子点212用于将对应的微型发光二极管202发出的光转换成另一种颜色的光。本实施例中，所有的微型发光二极管202发蓝光，部分孔洞206的量子点212为蓝色量子点以将蓝光转换为红光；另外部分孔洞206的量子点212为绿色量子点以将蓝光转换为绿光；其余孔洞206未设置量子点212，使微型发光二极管202发出的蓝光通过孔洞206直接出射。如此，穿过孔洞206和量子点212的红光、绿光、蓝光通过合光可实现背光为白光的画面显示。
实施例四
本发明实施例四提供了实施例一的微型发光二极管显示面板200的制作方法，图5A至图5F展示了图2中的微型发光二极管显示面板200的制作流程图，包括如下步骤：
S1：如图5A所示，在薄膜晶体管阵列基板201上设置多个微型发光二极管202，然后在薄膜晶体管阵列基板201上形成公共电极203，公共电极203直接电性连接每个微型发光二极管202远离薄膜晶体管阵列基板201的一侧。
S2：如图5B所示，在公共电极203远离薄膜晶体管阵列基板201的一侧形成金属层204。
S3：如图5C所示，在金属层204远离薄膜晶体管阵列基板201的一侧形成黑色光阻层205。
S4：请一并参阅图5D和图5E，在黑色光阻层205上开设多个孔洞206，每个孔洞206贯穿黑色光阻层205和金属层204且正对一个微型发光二极管202。
具体地，孔洞206可通过对黑色光阻层205和金属层进行蚀刻得到。
S5：如图5F所示，在黑色光阻层205远离薄膜晶体管阵列基板201的一侧形成平坦化层210。
本发明实施例提供的微型发光二极管显示面板200中公共电极203通过金属层204与走线207电性连接，故而公共电极203无需在边界区域NA延伸得过宽来与走线207电性连接，有利于减少公共电极203的电阻值，同时走线207也可制作得较窄，因而有利于窄边框的实现；由于电流在金属层204中的迁移率优于在公共电极203中的迁移率，有利于提高电流分布的均匀性，从而提升显示画面的均匀度。本发明实施例提供的微型发光二极管显示面板200还增加了黑色光阻层205以减少光线入射金属层的反射，增加显示画面的显示对比度。本发明实施例还提供了微型发光二极管显示面板200的制作方法。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化涵括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。此外，显然“包括”一词不排除其他单元或步骤，单数不排除复数。装置权利要求中陈述的多个装置也可以由同一个装置或系统通过软件或者硬件来实现。第一，第二等词语用来表示名称，而并不表示任何特定的顺序。
最后应说明的是，以上实施例仅用以说明本发明的技术方案而非限制，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或等同替换，而不脱离本发明技术方案的精神和范围。

Claims (9)

1.一种微型发光二极管显示面板，所述微型发光二极管显示面板包括显示区域和围绕所述显示区域的边界区域，其特征在于，包括：
薄膜晶体管阵列基板；
多个微型发光二极管，间隔设置于所述薄膜晶体管阵列基板上且位于所述显示区域；
公共电极，位于所述薄膜晶体管阵列基板上，覆盖所有微型发光二极管且与所述微型发光二极管电性连接；
金属层，位于所述公共电极远离所述微型发光二极管的一侧且电性连接所述公共电极；
黑色光阻层，位于所述金属层远离所述公共电极的一侧，所述黑色光阻层中开设有贯穿所述黑色光阻层和所述金属层的多个孔洞，每个孔洞正对一个微型发光二极管以使微型发光二极管发出的光能够穿过射出，所述黑色光阻层和所述金属层具有相同的图案，所述公共电极、所述金属层及所述黑色光阻层设置于所述显示区域并延伸至所述边界区域；以及
与所述金属层电性连接的走线，所述走线位于所述边界区域。
2.如权利要求1所述的微型发光二极管显示面板，其特征在于，所述金属层直接层叠于所述公共电极上且与所述公共电极电性连接。
3.如权利要求1所述的微型发光二极管显示面板，其特征在于，所述金属层的材质为钼、铝及钛中的一种或多种。
4.如权利要求1所述的微型发光二极管显示面板，其特征在于，所述薄膜晶体管阵列基板远离所述微型发光二极管的一侧设置有驱动器，所述驱动器位于所述边界区域内。
5.如权利要求4所述的微型发光二极管显示面板，其特征在于，所述金属层通过所述走线与所述驱动器电性连接。
6.如权利要求4所述的微型发光二极管显示面板，其特征在于，在所述边界区域，所述走线位于所述驱动器和所述金属层之间且与所述驱动器在垂直于所述薄膜晶体管阵列基板的方向上至少部分重叠。
7.如权利要求1所述的微型发光二极管显示面板，其特征在于，部分所述孔洞填充有量子点，所述量子点用于将对应的微型发光二极管发出的光转换成另一种颜色的光。
8.如权利要求1所述的微型发光二极管显示面板，其特征在于，所述微型发光二极管显示面板还包括位于所述黑色光阻层远离所述金属层一侧的平坦化层。
9.一种如权利要求1所述的微型发光二极管显示面板的制作方法，其特征在于，包括如下步骤：
在薄膜晶体管阵列基板上设置多个微型发光二极管，之后在薄膜晶体管阵列基板上形成公共电极，所述公共电极直接电性连接每个微型发光二极管远离所述薄膜晶体管阵列基板的一侧；
在所述公共电极远离所述薄膜晶体管阵列基板的一侧形成金属层；以及
在所述金属层远离所述薄膜晶体管阵列的一侧形成黑色光阻层；
在所述黑色光阻层上开设多个孔洞，每个孔洞贯穿所述黑色光阻层和所述金属层且正对一个微型发光二极管，所述黑色光阻层和所述金属层具有相同的图案。
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