TWI734157B - 微型發光二極體顯示面板及其製作方法 - Google Patents

微型發光二極體顯示面板及其製作方法 Download PDF

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TWI734157B
TWI734157B TW108126859A TW108126859A TWI734157B TW I734157 B TWI734157 B TW I734157B TW 108126859 A TW108126859 A TW 108126859A TW 108126859 A TW108126859 A TW 108126859A TW I734157 B TWI734157 B TW I734157B
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陳柏輔
吳逸蔚
陸一民
張煒熾
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鴻海精密工業股份有限公司
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Abstract

本發明提供了一種微型發光二極體顯示面板及其製作方法,微型發光二極體顯示面板包括:薄膜電晶體陣列基板;多個微型發光二極體,間隔設置於薄膜電晶體陣列基板上且位於顯示區域;公共電極,位於薄膜電晶體陣列基板上,與微型發光二極體電性連接;金屬層,位於公共電極遠離微型發光二極體的一側且電性連接公共電極;以及黑色光阻層,位於金屬層遠離公共電極的一側,黑色光阻層中開設有貫穿黑色光阻層及金屬層的多個孔洞,每個孔洞正對一個微型發光二極體,公共電極、金屬層及黑色光阻層設置於顯示區域並延伸至邊界區域。

Description

微型發光二極體顯示面板及其製作方法
本發明涉及顯示技術領域,尤其涉及一種微型發光二極體顯示面板及其製作方法。
習知技術中,微型發光二極體(micro light emitting diode)顯示面板吸引了公眾的關注,微型發光二極體顯示面板可兼顧較窄的邊框與良好的顯示質量。如圖1所示,習知的微型發光二極體顯示面板100的包括顯示區域aa及邊界區域na,微型發光二極體顯示面板100包括薄膜電晶體陣列基板101、設置於薄膜電晶體陣列基板101上且位於顯示區域aa的多個微型發光二極體102、設置於薄膜電晶體陣列基板101上且與微型發光二極體102電性連接的公共電極103及覆蓋公共電極103的平坦化層110,在邊界區域na製作有藉由連接端子108與公共電極103電性連接的導電的走線107,在走線107靠近顯示區域aa的一側設置有驅動微型發光二極體102發光的驅動器109,公共電極103設置於顯示區域aa並延伸至邊界區域na以與走線107電性連接,為減少公共電極103延伸至邊界區域na的面積以降低公共電極103的電阻值,走線107設置具有較大的線寬(圖1中所示走線107為沿垂直於其延伸方向的截面圖),邊界區域na的寬度也隨之增加,進而導致微型發光二極體顯示面板100的邊框較寬,屏占比較小。
本發明第一方面提供一種微型發光二極體顯示面板,所述微型發光二極體顯示面板包括顯示區域及圍繞所述顯示區域的邊界區域,包括:薄膜電晶體陣列基板;多個微型發光二極體,間隔設置於所述薄膜電晶體陣列基板上且位於所述顯示區域;公共電極,位於所述薄膜電晶體陣列基板上,覆蓋所有微型發光二極體且與所述微型發光二極體電性連接;金屬層,位於所述公共電極遠離所述微型發光二極體的一側且電性連接所述公共電極;以及黑色光阻層,位於所述金屬層遠離所述公共電極的一側,所述黑色光阻層中開設有貫穿所述黑色光阻層及所述金屬層的多個孔洞,每個孔洞正對一個微型發光二極體以使微型發光二極體發出的光能夠穿過射出,所述公共電極、所述金屬層及所述黑色光阻層設置於所述顯示區域並延伸至所述邊界區域。
本發明第二方面提供一種微型發光二極體顯示面板的製作方法,包括:在薄膜電晶體陣列基板上設置多個微型發光二極體,之後在薄膜電晶體陣列基板上形成公共電極,所述公共電極直接電性連接每個微型發光二極體遠離所述薄膜電晶體陣列基板的一側;在所述公共電極遠離所述薄膜電晶體陣列基板的一側形成金屬層;以及在所述金屬層遠離所述薄膜電晶體陣列的一側形成黑色光阻層;在所述黑色光阻層上開設多個孔洞,每個孔洞貫穿所述黑色光阻層及所述金屬層且正對一個微型發光二極體。
本發明提供的微型發光二極體顯示面板中公共電極藉由金屬層與走線電性連接,故而公共電極無需在邊界區域延伸得過寬來與走線電性連接, 有利於減少公共電極的電阻值,同時走線也可製作得較窄,因而有利於窄邊框的實現;由於電流在金屬層中的遷移率優於在公共電極中的遷移率,有利於提高電流分佈的均勻性,從而提升顯示畫面的均勻度。本發明還提供了微型發光二極體顯示面板的製作方法。
100、200:微型發光二極體顯示面板
AA、aa:顯示區域
NA、na:邊界區域
101、201:薄膜電晶體陣列基板
102、202:微型發光二極體
103、203:公共電極
204:金屬層
205:黑色光阻層
206:孔洞
107、207:走線
108、208:連接端子
109、209:驅動器
110、210:平坦化層
111、211:顯示電極
212:量子點
圖1為習知的微型發光二極體顯示面板的剖面示意圖。
圖2為本發明實施例一的微型發光二極體顯示面板的剖面示意圖。
圖3為本發明實施例二的微型發光二極體顯示面板的剖面示意圖。
圖4為本發明實施例三的微型發光二極體顯示面板的剖面示意圖。
圖5A至圖5F為本發明實施例的微型發光二極體顯示面板的製作方法的剖面示意圖。
實施例一
如圖2所示,本發明實施例一的微型發光二極體顯示面板200設有顯示區域AA及圍繞顯示區域AA的邊界區域NA,邊界區域NA設有驅動顯示區域AA顯示畫面的元器件。微型發光二極體顯示面板200包括多個微型發光二極體202、薄膜電晶體陣列基板201、公共電極203、金屬層204及黑色光阻層205。其中,多個微型發光二極體202間隔設置於薄膜電晶體陣列基板201上且位於顯示區域AA;公共電極203位於薄膜電晶體陣列基板201上且覆蓋所有微型發光二極體202;導電的金屬層204位於公共電極203遠離微型發光二極體202的一側且電性連接公共電極203;以及黑色光阻層205,位於金屬層204遠離公共電極203的一側,黑色光阻層205及金屬層204中開設有貫穿黑色光阻層205及金屬層204的 多個孔洞206,每個孔洞206正對一個微型發光二極體202以使微型發光二極體202發出的光能夠穿過射出,公共電極203、金屬層204及黑色光阻層205設置於顯示區域AA並延伸至邊界區域NA。
公共電極203由透明導電材料製成且連接每個微型發光二極體202的遠離薄膜電晶體陣列基板201的一側(如,圖2中公共電極203連接微型發光二極體202的頂端)。公共電極203可例如由銦錫氧化物(Indium Tin Oxide,ITO)製成。在黑色光阻層205中設有多個孔洞206,每個孔洞206貫穿黑色光阻層205及金屬層204且正對一個微型發光二極體202,由此微型發光二極體202發出的光束能夠藉由對應的孔洞206透過黑色光阻層205及金屬層204。金屬層204可由具有較低電阻值的金屬及合金製成,金屬層204的材質可例如包括鉬(Mo)、鋁(Al)、鈦(Ti)中的一種或多種。金屬層204直接層疊於公共電極203上且與公共電極203電性連接。公共電極203藉由金屬層204與走線207電性連接,故而公共電極203無需在邊界區域NA延伸得過寬來與走線207電性連接,有利於減少公共電極203的電阻值,同時走線207也可製作得較窄,因而有利於窄邊框的實現;由於增加了金屬層204後公共電極203的覆蓋面積可減少,電流在金屬層204中的遷移率優於在公共電極203中的遷移率,故增加金屬層204有利於提高電流分佈的均勻性,從而提升顯示畫面的均勻度。
黑色光阻層205及金屬層204具有相同的圖案,換句話說,黑色光阻層205及金屬層204具有相同或相似的形狀。黑色光阻層205用於減少金屬層204的入射光(外界光源)的反射,進而提高顯示畫面的對比度。黑色光阻層205完全覆蓋邊界區域NA,光束無法穿過邊界區域NA。公共電極203部分覆蓋邊界區域NA。
微型發光二極體顯示面板200的邊界區域NA包括與金屬層204電性連接的至少一條走線207,每條走線207藉由一個連接端子208與金屬層204電性 連接,從而與公共電極203電性連接。連接端子208可例如為ITO。本實施例中,與公共電極203電性連接的金屬層204可降低公共電極203的電阻值,故不需要設置具有較大線寬的走線用以降低電阻。圖2中所示的走線207為沿垂直於其延伸方向的截面圖,如圖2所示,與公共電極203電性連接的走線207具有較小的線寬,圖2中的微型發光二極體顯示面板200相比圖1中的微型發光二極體顯示面板100具有較窄的邊界區域NA且可降低公共電極203的電阻值。
微型發光二極體顯示面板200還包括位於邊界區域NA中的驅動器209,驅動器209位於薄膜電晶體陣列基板201遠離微型發光二極體202的一側。AA本實施例中,在邊界區域NA,走線207位於驅動器209及金屬層204之間且與驅動器209在垂直於薄膜電晶體陣列基板201的方向上至少部分重疊。驅動器209用於為微型發光二極體202提供驅動電流,金屬層204藉由走線207與驅動器209電性連接。
薄膜電晶體陣列基板201包括多個薄膜電晶體(薄膜電晶體陣列)(圖未示)。在每個微型發光二極體202及薄膜電晶體陣列基板201之間形成有顯示電極211,當顯示電極211及公共電極203之間存在所需的電勢差時,微型發光二極體202發光。
本實施例中,微型發光二極體202至少包括發紅光、藍光及綠光的三種。
微型發光二極體顯示面板200還包括位於黑色光阻層205遠離金屬層204一側的平坦化層210。平坦化層210完全覆蓋顯示區域AA及邊界區域NA且填充孔洞206,平坦化層210的材質為透明的絕緣材料,例如聚醯亞胺。
實施例二
如圖3所示,本發明實施例二提供的微型發光二極體顯示面板200及實施例一的微型發光二極體顯示面板200大體上相同,不同在於:本實施例中 走線207位於驅動器209的上方,具體地位於驅動器209及金屬層204之間。故相較於實施例一中的微型發光二極體顯示面板200,本實施例中的微型發光二極體顯示面板200的邊界區域NA可製作得更窄,有利於實現微型發光二極體顯示面板200的窄邊框,改善用戶的使用體驗。
實施例三
如圖4所示,本發明實施例三提供的微型發光二極體顯示面板200與實施例一中的微型發光二極體顯示面板200大體上相同,不同在於:實施例三中貫穿黑色光阻層205及金屬層204的部分孔洞206填充有量子點212,量子點212用於將對應的微型發光二極體202發出的光轉換成另一種顏色的光。本實施例中,所有的微型發光二極體202發藍光,部分孔洞206的量子點212為藍色量子點以將藍光轉換為紅光;另外部分孔洞206的量子點212為綠色量子點以將藍光轉換為綠光;其餘孔洞206未設置量子點212,使微型發光二極體202發出的藍光藉由孔洞206直接出射。如此,穿過孔洞206及量子點212的紅光、綠光、藍光藉由合光可實現背光為白光的畫面顯示。
實施例四
本發明實施例四提供了實施例一的微型發光二極體顯示面板200的製作方法,圖5A至圖5F展示了圖2中的微型發光二極體顯示面板200的製作流程圖,包括如下步驟:
S1:如圖5A所示,在薄膜電晶體陣列基板201上設置多個微型發光二極體202,然後在薄膜電晶體陣列基板201上形成公共電極203,公共電極203直接電性連接每個微型發光二極體202遠離薄膜電晶體陣列基板201的一側。
S2:如圖5B所示,在公共電極203遠離薄膜電晶體陣列基板201的一側形成金屬層204。
S3:如圖5C所示,在金屬層204遠離薄膜電晶體陣列基板201的一側形成黑色光阻層205。
S4:請一併參閱圖5D及圖5E,在黑色光阻層205上開設多個孔洞206,每個孔洞206貫穿黑色光阻層205及金屬層204且正對一個微型發光二極體202。
具體地,孔洞206可藉由對黑色光阻層205及金屬層進行蝕刻得到。
S5:如圖5F所示,在黑色光阻層205遠離薄膜電晶體陣列基板201的一側形成平坦化層210。
本發明實施例提供的微型發光二極體顯示面板200中公共電極203藉由金屬層204與走線207電性連接,故而公共電極203無需在邊界區域NA延伸得過寬來與走線207電性連接,有利於減少公共電極203的電阻值,同時走線207也可製作得較窄,因而有利於窄邊框的實現;由於電流在金屬層204中的遷移率優於在公共電極203中的遷移率,有利於提高電流分佈的均勻性,從而提升顯示畫面的均勻度。本發明實施例提供的微型發光二極體顯示面板200還增加了黑色光阻層205以減少光線入射金屬層的反射,增加顯示畫面的顯示對比度。本發明實施例還提供了微型發光二極體顯示面板200的製作方法。
200:微型發光二極體顯示面板
AA:顯示區域
NA:邊界區域
201:薄膜電晶體陣列基板
202:微型發光二極體
203:公共電極
204:金屬層
205:黑色光阻層
206:孔洞
207:走線
208:連接端子
209:驅動器
210:平坦化層
211:顯示電極

Claims (10)

  1. 一種微型發光二極體顯示面板,所述微型發光二極體顯示面板包括顯示區域及圍繞所述顯示區域的邊界區域,其改良在於,包括:薄膜電晶體陣列基板;多個微型發光二極體,間隔設置於所述薄膜電晶體陣列基板上且位於所述顯示區域;公共電極,位於所述薄膜電晶體陣列基板上,覆蓋所有微型發光二極體且與所述微型發光二極體電性連接;金屬層,位於所述公共電極遠離所述微型發光二極體的一側且電性連接所述公共電極;以及黑色光阻層,位於所述金屬層遠離所述公共電極的一側,所述黑色光阻層中開設有貫穿所述黑色光阻層及所述金屬層的多個孔洞,每個孔洞正對一個微型發光二極體以使微型發光二極體發出的光能夠穿過射出,所述公共電極、所述金屬層及所述黑色光阻層設置於所述顯示區域並延伸至所述邊界區域。
  2. 如請求項1所述的微型發光二極體顯示面板,其中,所述金屬層直接層疊於所述公共電極上且與所述公共電極電性連接。
  3. 如請求項1所述的微型發光二極體顯示面板,其中,所述金屬層的材質為鉬、鋁及鈦中的一種或多種。
  4. 如請求項1所述的微型發光二極體顯示面板,其中,所述微型發光二極體顯示面板還包括與所述金屬層電性連接的走線,所述走線位於所述邊界區域。
  5. 如請求項4所述的微型發光二極體顯示面板,其中,所述薄膜電晶體陣列基板遠離所述微型發光二極體的一側設置有驅動器,所述驅動器位於所述邊界區域內。
  6. 如請求項5所述的微型發光二極體顯示面板,其中,所述金屬層藉由所述走線與所述驅動器電性連接。
  7. 如請求項5所述的微型發光二極體顯示面板,其中,在所述邊界區域,所述走線位於所述驅動器及所述金屬層之間且與所述驅動器在垂直於所述薄膜電晶體陣列基板的方向上至少部分重疊。
  8. 如請求項1所述的微型發光二極體顯示面板,其中,部分所述孔洞填充有量子點,所述量子點用於將對應的微型發光二極體發出的光轉換成另一種顏色的光。
  9. 如請求項1所述的微型發光二極體顯示面板,其中,所述微型發光二極體顯示面板還包括位於所述黑色光阻層遠離所述金屬層一側的平坦化層。
  10. 一種微型發光二極體顯示面板的製作方法,其改良在於,包括如下步驟:在薄膜電晶體陣列基板上設置多個微型發光二極體,之後在薄膜電晶體陣列基板上形成公共電極,所述公共電極直接電性連接每個微型發光二極體遠離所述薄膜電晶體陣列基板的一側;在所述公共電極遠離所述薄膜電晶體陣列基板的一側形成金屬層;以及在所述金屬層遠離所述薄膜電晶體陣列的一側形成黑色光阻層;在所述黑色光阻層上開設多個孔洞,每個孔洞貫穿所述黑色光阻層及所述金屬層且正對一個微型發光二極體。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005106934A1 (en) * 2004-04-28 2005-11-10 Iufc-Hyu Flexible electro-optical apparatus and method for manufacturing the same
TW200708181A (en) * 2005-08-12 2007-02-16 Au Optronics Corp Organic electroluminescent display panel and fabricatiing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
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KR102357269B1 (ko) * 2014-12-12 2022-02-03 삼성디스플레이 주식회사 유기발광 표시장치 및 그 제조방법
CN106898628B (zh) * 2017-04-28 2019-08-02 深圳市华星光电技术有限公司 Led显示面板
CN107331680B (zh) * 2017-07-05 2020-04-24 上海天马微电子有限公司 一种显示面板及其制造方法、显示装置
CN109216522B (zh) * 2017-07-07 2020-02-07 鸿富锦精密工业(深圳)有限公司 微型led显示面板
CN107895728B (zh) * 2017-12-05 2020-07-28 京东方科技集团股份有限公司 阵列基板、其制作方法和包括阵列基板的显示装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005106934A1 (en) * 2004-04-28 2005-11-10 Iufc-Hyu Flexible electro-optical apparatus and method for manufacturing the same
TW200708181A (en) * 2005-08-12 2007-02-16 Au Optronics Corp Organic electroluminescent display panel and fabricatiing method thereof

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