CN110838462A - Mass transfer method and system of device array - Google Patents
Mass transfer method and system of device array Download PDFInfo
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- CN110838462A CN110838462A CN201810931059.0A CN201810931059A CN110838462A CN 110838462 A CN110838462 A CN 110838462A CN 201810931059 A CN201810931059 A CN 201810931059A CN 110838462 A CN110838462 A CN 110838462A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000005520 cutting process Methods 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000926 separation method Methods 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000003698 laser cutting Methods 0.000 claims description 4
- 238000006552 photochemical reaction Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 69
- 238000003491 array Methods 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
Abstract
The invention discloses a bulk transfer method and a bulk transfer system for a device array. The method comprises the following steps: step 1, providing a wafer, wherein the wafer comprises a bearing substrate and a plurality of electronic devices, the electronic devices are arranged on one surface of the bearing substrate in an array mode, and each electronic device and part of the bearing substrate bearing the electronic device form a device unit; step 2, cutting the wafer along the side edges of the device units, wherein each device unit is still connected with at least one adjacent device unit, and all the device units are not separated from the wafer; step 3, transferring the wafer; and 4, cutting the transferred wafer along the side edges of the device units again so as to completely separate the adjacent device units.
Description
Technical Field
The present invention relates to methods of transferring electronic devices, and more particularly, to a bulk transfer method and system for an array of devices.
Background
In recent years, various electronic devices have been miniaturized and scaled up, and in practical use, for example, a photoelectric conversion diode or a light emitting diode, a display panel usually has millions of light emitting diodes as pixels, and a large number of photoelectric conversion diodes are also used as signal receiving parts in a laser radar LiDAR device.
Due to the small size of electronic devices, precise alignment is a difficult problem. If the electronic devices formed on the wafer are respectively stripped from the wafer and picked up one by one, and then aligned to the corresponding circuit board for bearing the electronic devices, the process is complex, the matched equipment is complex, the operation time is long, and the maintenance cost is high. If the large-area electronic devices on the wafer are transferred to the corresponding receiving circuit board in a simultaneous alignment manner, the problem of misalignment is easily caused, and the yield of the product is affected.
Disclosure of Invention
The invention provides a device array bulk transfer method and system, which can make the device array bulk transfer more rapid and accurate.
The invention discloses a bulk transfer method of a device array, which comprises the following steps:
step 1, providing a wafer, wherein the wafer comprises a bearing substrate and a plurality of electronic devices, the electronic devices are arranged on one surface of the bearing substrate in an array mode, and each electronic device and part of the bearing substrate bearing the electronic device form a device unit;
step 2, cutting the wafer along the side edges of the device units, wherein each device unit is still connected with at least one adjacent device unit, and all the device units are not separated from the wafer;
step 3, transferring the wafer;
and 4, cutting the transferred wafer along the side edges of the device units again so as to completely separate the adjacent device units.
The cutting step of step 2 is to cut along a part of the side edges or all of the side edges of the device units in the length and/or width direction of the array.
The cutting step of step 2 is to realize partial separation or complete separation of adjacent device units in the thickness direction of the wafer.
The dicing step of step 4 achieves complete separation of adjacent device units in both the length and width directions of the array and in the thickness direction of the wafer.
The cutting step in step 2 and step 4 can adopt a laser cutting method, a photochemical reaction method or a photophysical reaction method.
The step 2 further comprises:
recording cutting information of the cutting;
the step 4 further comprises:
and cutting again according to the cutting information.
The method also comprises the following steps between the steps 1 and 2: attaching the first side of the wafer to a temporary adapter plate, and executing the step 2 on the second side of the wafer;
the second side of the wafer is bonded to a fixed substrate and step 4 is performed on the first side of the wafer.
Said method bonding the board to the fixed substrate with the electronic device side, performing the step 4 from the substrate side; or
The plate is bonded to the fixed substrate with the substrate side, and the step 4 is performed from the electronic device side.
The invention also discloses a system for realizing the bulk transfer of the device array, wherein the wafer comprises a bearing substrate and a plurality of electronic devices, the electronic devices are arranged on one surface of the bearing substrate in an array mode, each electronic device and part of the bearing substrate bearing the electronic device form a device unit, and the system comprises:
a wafer dicing apparatus for pre-dicing the wafer along the side edges of the device units, but each device unit remains connected to at least one adjacent device unit and all device units do not detach from the wafer;
a cutting information recording means for recording the precut cutting information;
and the wafer cutting device cuts the transferred wafer along the side edges of the device units again according to the cutting information so as to completely separate the adjacent device units.
The system also comprises a grabbing device used for grabbing the wafer or the plate.
The precutting of the wafer cutting device comprises:
cutting along part of or all of the side edges of the device units in the length and/or width direction of the array;
in the thickness direction of the wafer, partial separation or complete separation of adjacent device units is achieved.
The invention has the technical effects that when the plate is integrally transferred, the internal device arrays are not completely separated, and the relative position relation of the internal device arrays is kept absolutely fixed, so that the position precision of the device arrays is high when the plate is transferred, the whole plate is used as a unit for alignment subsequently, the alignment difficulty is reduced, the device arrays are transferred in a large amount more quickly and accurately, the yield of products is improved, the operation is simple and convenient, and the cost is low.
Drawings
Fig. 1A is a schematic cross-sectional view along AA' of a wafer.
FIG. 1B is a schematic view of a wafer structure.
Fig. 2 is a schematic flow chart of the method.
Fig. 3A and 3B are schematic diagrams illustrating the cutting manner of the precut in the length and/or width direction of the wafer.
Fig. 4-6 are cross-sectional views corresponding to the partial cut of fig. 3A.
Fig. 7-9 are schematic views illustrating a cutting process according to another embodiment of the present invention.
FIG. 10 is a schematic diagram of a system for performing bulk transfers of an array of devices according to the present invention.
Detailed Description
The following describes an implementation process of the technical solution of the present invention with reference to specific embodiments, which are not intended to limit the present invention.
FIG. 1A is a cross-sectional view of a wafer along line AA'. FIG. 1B is a schematic view of a wafer structure.
The wafer 100 may utilize 6-inch wafers, not limited to the wafer size. The wafer 100 includes a substrate 10 and a plurality of electronic devices 20, the substrate 10 being a carrier substrate for growing the electronic devices 20. Examples of the substrate 10 include a sapphire substrate, a gallium nitride substrate, an aluminum nitride substrate, a silicon substrate, a gallium arsenide substrate, and a silicon carbide substrate, but the present invention is not limited to the type of the substrate.
Electronic devices are arranged in an array on one surface of the substrate 10. Each electronic device 20 may be a light emitting element, a photoelectric conversion element APD, or other electronic device, and the present invention is not limited to the kind of the electronic device 20 mounted on the wafer. Each electronic device and a part of the substrate carrying the electronic device form a device unit 101, and fig. 1B illustrates an example in which 8 × 4 electronic devices are carried on the wafer 100, but the actual number is not limited thereto. Fig. 1B includes 32 device cells adjacent to each other.
The invention discloses a bulk transfer method of a device array, which is shown as a flow chart in FIG. 2. The method comprises the following steps:
step 1, providing a wafer, wherein the wafer comprises a bearing substrate and a plurality of electronic devices, the electronic devices are arranged on one surface of the bearing substrate in an array mode, and each electronic device and a part of the bearing substrate bearing the electronic device form a device unit.
And 2, cutting the wafer along the side edges of the device units by using a wafer cutting device, wherein each device unit is kept connected with at least one adjacent device unit, and all the device units are not separated from the wafer.
Referring to fig. 3A, an example of 4 electronic devices is illustrated. And step 2, pre-cutting the device units to realize semi-adhesion between the adjacent device units.
Specifically, as shown in fig. 3A, the position where the cutting is performed is indicated by a black solid line, only the side edge of each device unit is cut in the length and/or width direction of the array, taking four side edges of each device unit as an example, for example, a part of the left edge and a part of the top edge of each device unit are cut, and the remaining part is kept unchanged and is not cut. Alternatively, dicing is performed only on a portion of the left edge of each device cell. Alternatively, the dicing is performed only on a part of the upper edge of each electronic device. The location of the partial cut may be selected as desired. In the thickness direction, partial separation or complete separation of adjacent device cells is achieved.
As shown in fig. 3B, it is also possible to cut all of the side edges, but not cut through in thickness, and still have a portion of the thickness remain attached, or otherwise ensure that all of the device units remain relatively stationary and do not completely detach from the wafer. Or one side edge is completely cut and completely cut through in thickness, the other side edge needs to be relied on to maintain connection with other device units.
As shown in fig. 4-6, which are cross-sectional views corresponding to the partial cut for the skirt of fig. 3A.
Fig. 3A shows the pre-cut in the length and/or width direction of the wafer, and fig. 5 and 6 show the pre-cut in the thickness direction of the wafer.
The pre-cutting is performed for the area between adjacent device cells 101, which is covered with some semiconductor layer. As in the embodiment shown in fig. 5, the pre-cut is performed from the side of the electronic device, only down to the lower edge of the electronic device 20, enabling the segmentation of the semiconductor layer without cutting the substrate 10, so that separation between adjacent electronic devices is achieved and the substrate remains connected.
In another embodiment, shown in fig. 6, the precut undercut is cut to the lower edge of the substrate 10 to allow separation between adjacent electronic devices and the substrate.
The pre-cutting step enables the device units to be partially separated and have certain mobility, and the device units are kept connected with each other to form a whole body, so that the subsequent plate distinguishing step is convenient to realize.
The pre-cutting step may be performed for all device units in the wafer 100 or for some of the device units therein.
That is, the present invention cuts some or all of the side edges of the device units in the length and/or width direction of the array and performs some or all of the separation in the thickness direction, but each device unit remains connected to at least one adjacent device unit and all of the device units do not detach from the wafer.
And 3, transferring the wafer.
The whole wafer can be transferred to a fixed substrate by using the grabbing device to be continuously jointed to be assembled into a required product, so that the mass transfer of electronic devices is realized.
And 4, cutting the wafer along the side edges of the device units again by using the wafer cutting device so as to completely separate the adjacent device units.
The wafer is diced again at the portions (length/width/thickness direction) where the side edges are not diced. Such that adjacent device cells are completely separated.
The bulk transfer method has the advantages that when the wafer is transferred integrally, the internal device arrays are not completely separated, and the relative position relation of the internal device arrays is kept absolutely fixed, so that the position precision of the device arrays is high when the wafer is transferred integrally, alignment is carried out subsequently by taking the whole plate as a unit, the alignment difficulty is reduced, the yield of products is improved, the operation is simple and convenient, and the cost is low.
The precutting allows the partial areas between the adjacent electronic devices to be separated, and thus reduces the workload, the work intensity and the alignment time for re-cutting.
The pre-cutting and re-cutting steps may employ laser cutting, photochemical reaction, or photophysical reaction.
Fig. 7, 8 and 9 are schematic views of a cutting process according to another embodiment of the present invention.
Between steps 1 and 2, the wafer 100 is attached to a temporary interposer, such as the adhesive substrate 30, particularly to the adhesive substrate 30 on the side where the electronic device is disposed.
The pre-cutting in step 2 is performed by a wafer cutting device from the substrate 10 side, and the pre-cutting manner is as described above and will not be described again. Simultaneously, the cutting device records the cutting information of the precut. The wafer cutting device is, for example, a laser cutting machine.
Subsequently, the wafer is transferred to the fixed substrate by the gripping device, and the portion which is not subjected to dicing is diced again based on the dicing information recorded in step 2.
The dicing process may be performed by adhering one side of the electronic device to the adhesive substrate and dicing the wafer from one side of the substrate in the manner shown in fig. 8, or by disposing the wafer on one side of the substrate to a fixed substrate, removing the adhesive substrate 30, and dicing the wafer from one side of the electronic device.
Alternatively, the dicing from both sides of the wafer may be repeated several times to complete the pre-dicing and finally the re-dicing from one side to complete the complete separation between adjacent device units.
Based on the above disclosure, the present invention further discloses a system for implementing bulk transfer of a device array, a schematic structural diagram of the system is shown in fig. 10, and the system 200 includes:
a wafer dicing apparatus 21 for pre-dicing the wafer along the side edges of the device units, but each device unit remains connected to at least one adjacent device unit and all device units do not detach from the wafer;
a cutting information recording means 22 for recording the precut cutting information;
and the wafer cutting device is also used for cutting the transferred wafer again along the side edges of the device units according to the cutting information so as to completely separate the adjacent device units.
In addition, the system may further comprise a gripping device 23 for gripping the wafer or the plate.
By utilizing the bulk transfer method and the bulk transfer system, when the wafer is transferred integrally, the internal device arrays are not completely separated, and the relative position relation is kept absolutely fixed, so that the position precision of the device arrays is high when the wafer is transferred, the whole wafer is used as a unit for alignment subsequently, the alignment difficulty is reduced, the device arrays are transferred more quickly and accurately, the yield of products is improved, the operation is simple and convenient, and the cost is low.
The above-mentioned embodiments are merely exemplary descriptions for implementing the present invention, and do not limit the scope of the present invention, which is defined by the claims appended hereto.
Claims (10)
1. A method for bulk transfer of an array of devices, comprising:
step 1, providing a wafer, wherein the wafer comprises a bearing substrate and a plurality of electronic devices, the electronic devices are arranged on one surface of the bearing substrate in an array mode, and each electronic device and part of the bearing substrate bearing the electronic device form a device unit;
step 2, cutting the wafer along the side edges of the device units, wherein each device unit is still connected with at least one adjacent device unit, and all the device units are not separated from the wafer;
step 3, transferring the wafer;
and 4, cutting the transferred wafer along the side edges of the device units again so as to completely separate the adjacent device units.
2. The method of claim 1, wherein the step 2 cutting step cuts along a portion of the side edges or all of the side edges of the device elements in the length and/or width direction of the array.
3. The method of claim 1 or 2, wherein the dicing step of step 2 effects partial or complete separation of adjacent device units in the thickness direction of the wafer.
4. The method of claim 1, wherein the cutting step in step 2 and step 4 is performed by laser cutting, photochemical reaction, or photophysical reaction.
5. The method of claim 1, wherein the step 2 further comprises:
recording cutting information of the cutting;
the step 4 further comprises:
and cutting again according to the cutting information.
6. The method of claim 1, 2 or 5, wherein between the steps 1 and 2, further comprising: attaching the first side of the wafer to a temporary adapter plate, and executing the step 2 on the second side of the wafer;
the second side of the wafer is bonded to a fixed substrate and step 4 is performed on the first side of the wafer.
7. The method as claimed in claim 6, wherein the board is bonded to the fixing substrate with the electronic device side, and the step 4 is performed from the substrate side; or
The plate is bonded to the fixed substrate with the substrate side, and the step 4 is performed from the electronic device side.
8. A system for implementing mass transfer of an array of devices for implementing the method of any of claims 1-7, wherein the wafer comprises a carrier substrate and a plurality of electronic devices, the plurality of electronic devices being arranged in an array on a surface of the carrier substrate, each electronic device and a portion of the carrier substrate carrying the electronic device forming a device unit, the system comprising:
a wafer dicing apparatus for pre-dicing the wafer along the side edges of the device units, but each device unit remains connected to at least one adjacent device unit and all device units do not detach from the wafer;
a cutting information recording means for recording the precut cutting information;
and the wafer cutting device cuts the transferred wafer along the side edges of the device units again according to the cutting information so as to completely separate the adjacent device units.
9. The system of claim 8, further comprising a gripping device for gripping the wafer or the plate.
10. The system of claim 8, wherein the pre-cutting of the wafer cutting device comprises:
cutting along part of or all of the side edges of the device units in the length and/or width direction of the array;
in the thickness direction of the wafer, partial separation or complete separation of adjacent device units is achieved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810931059.0A CN110838462B (en) | 2018-08-15 | 2018-08-15 | Mass transfer method and system of device array |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810931059.0A CN110838462B (en) | 2018-08-15 | 2018-08-15 | Mass transfer method and system of device array |
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| CN110838462A true CN110838462A (en) | 2020-02-25 |
| CN110838462B CN110838462B (en) | 2022-12-13 |
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| CN110838462B (en) | 2022-12-13 |
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