CN110838314A - Method and device for reinforcing stored data - Google Patents
Method and device for reinforcing stored data Download PDFInfo
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- CN110838314A CN110838314A CN201810940100.0A CN201810940100A CN110838314A CN 110838314 A CN110838314 A CN 110838314A CN 201810940100 A CN201810940100 A CN 201810940100A CN 110838314 A CN110838314 A CN 110838314A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
Abstract
The embodiment of the invention discloses a method and a device for reinforcing stored data. The method and the device for reinforcing the stored data provided by the embodiment of the invention can refresh the stored data before the stored data in the memory runs, detect the retention of the stored data and execute the reinforcing operation when the retention of the stored data is weakened, thereby improving the reliability of the stored data and avoiding the system breakdown phenomenon caused by data errors.
Description
Technical Field
The embodiment of the invention relates to the technical field of stored data processing, in particular to a method and a device for reinforcing stored data.
Background
The Memory (Memory) as the Memory device for storing information in modern information technology can complete the access of program or data automatically and fast in the running process of computer to ensure the normal work of computer. The memory is classified into a non-permanent memory and a permanent memory according to the storability of information. Wherein, after the power failure of the non-permanent memory, the stored information will disappear; and the permanent memory can still store information after power failure.
The nonvolatile memory is a nonvolatile memory, and the storage unit of such a memory is easily affected by temperature, cosmic rays, defects of an insulating layer material for manufacturing the memory, and the like, so that the voltage threshold or the current characteristic of the storage unit is shifted, and the retention of data stored in the storage unit is further affected. Once the data stored in the storage unit is lost, the whole system of the computer may be crashed. In the prior art, to improve the reliability of the data stored in the memory cell, an error detection and correction technique is usually used to perform error detection and correction on the data stored in the memory cell, and a hamming code is inserted into the original data stored in the memory cell to detect and correct the error of the data stored in the memory cell.
Although the error detection and correction technology can detect and correct errors of data stored in the memory cells, the error detection and correction technology requires that hamming codes are inserted into original data stored in the memory cells, so that the hamming codes occupy a certain storage space, the memory cells need to increase extra storage area, and the error detection and correction process needs to occupy extra time, thereby being not beneficial to data storage and reading.
Disclosure of Invention
In view of this, embodiments of the present invention provide a method and an apparatus for reinforcing stored data, which can improve retention of the stored data in a storage unit by reinforcing the stored data in the storage unit.
In a first aspect, an embodiment of the present invention provides a method for reinforcing stored data, including:
when the memory is powered on and standby, performing at least one refreshing operation on the storage data of the memory;
determining the retention of the data stored in the memory according to the detection result of the refreshing operation;
and when the retention force of the data stored in the memory is detected to be smaller than a preset value, carrying out reinforcement operation on the stored data of the memory.
Optionally, the method further includes:
and when the chip selection signal is acquired, interrupting the refreshing operation and executing an external instruction.
Optionally, when the memory is powered on and in standby, performing at least one refresh operation on the storage data of the memory, including:
when a memory is powered on and standby, acquiring a refresh frequency for refreshing stored data of the memory;
and performing a plurality of times of refreshing operation on the stored data of the memory according to the refreshing frequency.
Optionally, when it is detected that the retention of the data stored in the memory is smaller than a preset value, performing a reinforcing operation on the stored data in the memory includes:
when the retention force of the stored data in the memory is detected to be smaller than a preset value, acquiring the address of the stored data;
and when the memory is programmed or erased, performing reinforcement operation on the stored data according to the address of the stored data.
Optionally, the reinforcing operation is to increase a voltage threshold or a current margin of a memory cell in which the stored data is located.
In a second aspect, an embodiment of the present invention further provides a device for reinforcing stored data, including:
the data refreshing module is used for refreshing the stored data of the memory at least once when the memory is powered on and standby;
the data retention determining module is used for determining the retention of the data stored in the memory according to the detection result of the refreshing operation;
and the data reinforcing module is used for reinforcing the stored data of the memory when the retention force of the stored data in the memory is detected to be smaller than a preset value.
Optionally, the apparatus further comprises:
and the data refreshing interruption module is used for interrupting the refreshing operation and executing an external instruction when the chip selection signal is acquired.
Optionally, the data refreshing module includes:
the device comprises a refresh frequency acquisition unit, a refresh frequency generation unit and a refresh frequency generation unit, wherein the refresh frequency acquisition unit is used for acquiring the refresh frequency of the refresh operation of the storage data of the memory when the memory is powered on and standby;
and the data refreshing unit is used for carrying out multiple refreshing operations on the stored data of the memory according to the refreshing frequency.
Optionally, the data consolidation module includes:
the address acquisition unit is used for acquiring the address of the stored data when the retention force of the stored data in the memory is detected to be smaller than a preset value;
and the reinforcing operation unit is used for performing reinforcing operation on the storage data according to the address of the storage data when the memory is subjected to programming or erasing operation.
Optionally, the reinforcing operation is to increase a voltage threshold or a current margin of a memory cell in which the stored data is located.
The embodiment of the invention provides a method and a device for reinforcing stored data, which carry out refreshing operation on the stored data in a memory when a storage area is powered on and standby, detect the retention of the stored data in the memory, and reinforce the stored data when the retention of the stored data in the memory is weakened, thereby solving the technical problem that the stored data is lost or has errors and influences the system operation because the retention of the stored data in the memory is weakened in the prior art, compared with the prior error correction and detection technology, the method and the device for reinforcing the stored data provided by the embodiment of the invention can carry out refreshing operation on the stored data before the stored data in the memory is operated, detect the retention of the stored data, and execute reinforcing operation when the retention of the stored data is weakened, thereby improving the reliability of the stored data, the system breakdown phenomenon caused by data errors is avoided.
Drawings
Fig. 1 is a flowchart of a method for reinforcing stored data according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for reinforcing stored data according to a second embodiment of the present invention;
fig. 3 is a flowchart of a method for reinforcing stored data according to a third embodiment of the present invention;
fig. 4 is a schematic structural diagram of a reinforcing apparatus for storing data according to a fourth embodiment of the present invention;
fig. 5 is a schematic structural diagram of a reinforcing apparatus for storing data according to a fifth embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures. The embodiments of the invention and the features of the embodiments can be combined with each other without conflict.
Example one
The method for reinforcing the storage data provided by the embodiment of the invention can be applied to an application scenario in which the storage data in the memory is detected and corrected when the memory is powered on and standby, and the method can be executed by the device for reinforcing the storage data provided by the embodiment of the invention, and the device can be realized in a hardware and/or software manner. Fig. 1 is a flowchart of a method for reinforcing stored data according to an embodiment of the present invention. Referring to fig. 1, the method for reinforcing stored data provided in this embodiment includes:
s110, when the memory is powered on and in standby, refreshing the storage data of the memory at least once.
Specifically, the stored data is stored in the memory in the form of an electrical signal, similar to the form of a charge stored in a capacitor. Since the existing capacitor cannot keep the charge unchanged for a long time, it is necessary to perform re-reading operation on the stored data of each memory cell in the memory at regular time, that is, to input a corresponding reference electrical signal to determine whether the electrical signal corresponding to the stored data in the memory remains stable, and this process is called a refresh operation of the stored data in the memory. The refresh operation may be performed when the memory is powered on into a standby state. The specific execution mode of the refresh operation may be to start executing the refresh operation when the memory is powered on and enters a standby state, and may also execute the refresh operation according to a refresh interval time, and after the memory is powered on and enters the standby state, execute the refresh operation at least once to ensure that the stored data in the memory can support the operation of the computer system.
And S120, determining the retention of the data stored in the memory according to the detection result of the refreshing operation.
Specifically, when the refresh operation is performed on the stored data in the memory, the stored data in the memory is read again, and in the reading process, whether the electrical signal corresponding to the stored data in the memory is stable, that is, whether the charge in the capacitor is stable, can be detected and used as the detection result of the refresh operation. And according to the detection result of the refreshing operation, whether the electric signal corresponding to the stored data in the memory is stable or not can be determined, namely the retention force of the stored data in the memory is large or small. The retention force of the stored data in the memory can be determined according to the difference range between the electric signal corresponding to the written stored data in the memory and the electric signal corresponding to the stored data in the current memory. For example, when the difference between the electrical signal corresponding to the stored data written in the memory and the electrical signal corresponding to the stored data currently stored in the memory is 0, the retention of the stored data in the memory can be considered to be 10. As the difference increases, the retention of the stored data in the memory gradually decreases.
S130, when the retention force of the data stored in the memory is detected to be smaller than a preset value, reinforcing the stored data of the memory.
Specifically, the detection result of the refresh operation can determine the retention of the stored data in the memory, that is, whether the electrical signal corresponding to the stored data in the memory currently is the same as the electrical signal corresponding to the stored data written in the memory. And if the corresponding electrical signal of the stored data in the memory is different from the corresponding electrical signal of the stored data written in the memory, and the difference value of the two electrical signals exceeds a certain electrical signal preset value, the retention force of the stored data in the memory is weakened and is smaller than the preset value. For example, when the electrical signal corresponding to the stored data is a voltage signal, the preset value of the electrical signal may be 10V, and the preset value of the retention corresponding to the stored data in the memory may be 6. If the preset value of the electric signal is 10V, the corresponding retention force of the data stored in the corresponding memory is 5, and the retention force of the data stored in the memory is smaller than the preset value at the moment. When the retention of the stored data in the memory is smaller than the preset value, the stored data is lost or goes wrong, which is not beneficial to the operation of the system. At this time, the stored data in the memory with weakened holding force can be restored by performing a reinforcing operation on the stored data in the memory, that is, by increasing the amount of charge in the capacitor. Wherein the hardening operation is performed on the stored data in the memory. For example, the voltage threshold and current margin of the memory cell in which the data stored with weakened retention is stored may be increased, thereby increasing the amount of charge corresponding to the stored data in the memory.
According to the method for reinforcing the stored data, before the stored data in the memory runs, the stored data is refreshed, the retention of the stored data is detected, and when the retention of the stored data is weakened, the reinforcing operation is executed, so that the reliability of the stored data is improved, and the system breakdown phenomenon caused by data errors is avoided.
Optionally, the present embodiment is optimized on the basis of the foregoing embodiment, and provides a preferable method, where a refresh interrupt method is added on the basis of the foregoing embodiment, specifically: and when the chip selection signal is acquired, interrupting the refreshing operation and executing an external instruction.
Specifically, after the memory is powered on and enters a standby state, a Central Processing Unit (CPU) of the computer can call the stored data in the memory at any time. When a computer has a plurality of memories on the same bus, a signal is needed to distinguish which memory the data and address are processed by, and a chip select signal is needed. Generally, when the address space is divided, the address space is generated by a logic circuit; in digital circuit designs, the open input pin is normally high, and the chip select signal is low. When the memory receives a chip selection signal sent by the CPU, the stored data in the memory is called by the CPU. At this time, the memory data in the memory executing the refresh operation cannot be called by the CPU, and the call instruction sent by the CPU can be executed by stopping the refresh operation on the memory data in the memory, so that the refresh operation and the reinforcement operation on the memory data in the memory do not affect the operation of the system, and the operation efficiency of the system is improved.
Example two
The embodiment is optimized on the basis of the above embodiment, and provides a preferable embodiment of an execution method of a refresh operation on the basis of the above embodiment, specifically: when a memory is powered on and standby, acquiring a refresh frequency for refreshing stored data of the memory; and performing a plurality of times of refreshing operation on the stored data of the memory according to the refreshing frequency. Fig. 2 is a flowchart of a method for reinforcing stored data according to a second embodiment of the present invention. As shown in fig. 2, the method for reinforcing stored data provided in this embodiment includes:
s210, when the memory is powered on and standby, obtaining the refresh frequency for refreshing the stored data of the memory;
and S220, performing multiple times of refreshing operation on the stored data of the memory according to the refreshing frequency.
Specifically, the stored data is stored in the memory in the form of an electrical signal, and the electrical signal corresponding to the stored data cannot be stably maintained due to the operating environment and the structure of the memory itself, which may cause an error or even crash in the operation of the computer system that calls for the stored data in the memory. When the memory data is called up, it is necessary to detect an electric signal corresponding to the memory data. The method for detecting the electrical signal corresponding to the stored data in the memory may be to re-read the stored data in the memory when the memory is powered on and enters a standby state, that is, to perform a refresh operation on the stored data in the memory. Since the power-on standby time of the memory is determined by the operating state of the computer system and the executed instructions, the standby time of the memory is uncertain, and if the refresh operation is continuously executed in the standby process of the memory, the standby power consumption of the memory is increased. When refreshing the data stored in the memory, the corresponding refresh interval time can be set, and the refresh operation is executed at a certain refresh frequency. The interval time of the refresh operation can be timed by an oscillator with extremely low power consumption, and the refresh frequency can be set at intervals of the order of seconds/minutes/hours/days/months/years. The specific interval time setting may be determined by the circumstances and is not limited herein.
S230, determining the retention of the data stored in the memory according to the detection result of the refreshing operation;
s240, when the retention force of the data stored in the memory is detected to be smaller than a preset value, reinforcing the stored data of the memory.
According to the method for reinforcing the stored data provided by the embodiment, the stored data in the memory is refreshed for a plurality of times according to the refreshing frequency of the refreshing operation of the stored data in the memory, so that the retention of the stored data in the memory can be detected at any time, and the reliability of the stored data in the memory is further improved.
EXAMPLE III
The embodiment is optimized on the basis of the above embodiment, and provides a preferable embodiment of an execution method of the reinforcement operation on the basis of the above embodiment, specifically: when the retention force of the stored data in the memory is detected to be smaller than a preset value, acquiring the address of the stored data; and when the memory is programmed or erased, performing reinforcement operation on the stored data according to the address of the stored data. Fig. 3 is a flowchart of a method for reinforcing stored data according to a third embodiment of the present invention. As shown in fig. 3, the method for reinforcing stored data provided in this embodiment includes:
s310, when the memory is electrified and standby, refreshing the stored data of the memory at least once;
s320, determining the retention of the data stored in the memory according to the detection result of the refreshing operation;
s330, when the retention force of the stored data in the memory is detected to be smaller than a preset value, acquiring the address of the stored data;
s340, when the memory is programmed or erased, reinforcing operation is carried out on the stored data according to the address of the stored data.
Specifically, when the memory is powered on and in standby, the memory data in the memory is refreshed, and the state of the memory data in the memory is detected according to the refresh operation, so that the retention of the memory data in the memory is determined. When the retention of the stored data in the memory is weakened, a certain difference exists between the electric signal corresponding to the currently stored data in the memory and the electric signal corresponding to the same stored data written in the memory. If the difference between the electric signal corresponding to the stored data in the memory and the electric signal corresponding to the same stored data written in the memory exceeds a certain value, the retention of the stored data in the memory is less than a certain value. When the retention of the data stored in the memory is smaller than a preset value, the storage address of the stored data can be recorded, and when the data stored in the memory is erased or programmed, the storage address corresponding to the stored data with weakened retention is called, and the stored data in the storage address is reinforced. The reinforcing operation may be, for example, increasing the voltage threshold or current margin of the memory cell in which the retention force is weakened to store data.
According to the method for reinforcing the stored data, when the storage data retention force in the memory is detected to be weakened, the address of the stored data is recorded, and the reinforcing operation is performed on the stored data in the recorded address when the memory is subjected to subsequent programming or erasing operation, so that the reinforcing operation of the stored data does not occupy additional time of other operations of the memory.
Example four
The embodiment provides an application scenario that a reinforcing device for storing data can be applied to detecting and correcting the stored data in a memory when the memory is powered on and standby, and the device can be implemented in a hardware and/or software manner. Fig. 4 is a schematic structural diagram of a reinforcing apparatus for storing data according to a fourth embodiment of the present invention. As shown in fig. 4, the present embodiment provides a data storage reinforcing apparatus including: data refresh module 10, data retention determination module 20, and data consolidation module 30.
The data refreshing module 10 is configured to perform at least one refreshing operation on the storage data of the memory when the memory is powered on and in standby;
the data retention determination module 20 is configured to determine retention of data stored in the memory according to the detection result of the refresh operation;
the data reinforcing module 30 is configured to perform a reinforcing operation on the stored data in the memory when it is detected that the retention of the stored data in the memory is smaller than a preset value.
The reinforcing operation on the storage data of the memory can be selected to increase the voltage threshold or the current tolerance of the storage unit where the storage data is located.
According to the strengthening device for the stored data, before the stored data in the memory runs, the stored data is refreshed, the retention of the stored data is detected, and the strengthening operation is executed when the retention of the stored data is weakened, so that the reliability of the stored data is improved, and the system breakdown phenomenon caused by data errors is avoided.
EXAMPLE five
The embodiment is optimized on the basis of the above embodiment, and a data refresh interrupt module is preferably added on the basis of the above embodiment, so that the memory interrupts the refresh operation at any time and executes the external instruction when receiving the external instruction in the refresh operation process. Fig. 5 is a schematic structural diagram of a reinforcing apparatus for storing data according to a fifth embodiment of the present invention. As shown in fig. 5, the reinforcing apparatus for storing data provided in this embodiment is further provided with a data refresh interrupt module 40. The data refresh interrupt module 40 is configured to interrupt the refresh operation and execute an external instruction when the chip select signal is acquired.
Optionally, with continuing reference to fig. 5, the data refreshing module 10 in the hardened device for storing data provided in this embodiment includes: a refresh frequency acquisition unit 11 and a data refresh unit 12.
The refresh frequency obtaining unit 11 is configured to obtain, when the memory is powered on and in standby, a refresh frequency for performing a refresh operation on the storage data of the memory;
the data refreshing unit 12 is configured to perform multiple refreshing operations on the stored data of the memory according to the refreshing frequency.
Optionally, with continuing reference to fig. 5, in the reinforcing apparatus for storing data provided in this embodiment, the data reinforcing module 30 includes: an address acquisition unit 31 and a reinforcement operation unit 32.
The address acquiring unit 31 is configured to acquire an address of the stored data when it is detected that the retention of the stored data in the memory is smaller than a preset value;
the reinforcing operation unit 32 is configured to perform a reinforcing operation on the storage data according to the address of the storage data when performing a programming or erasing operation on the memory.
The device for reinforcing the stored data provided by the embodiment can execute the method for reinforcing the stored data provided by any embodiment of the invention, and has corresponding functional modules and beneficial effects for executing the method. Technical details that are not described in detail in the above embodiments may be referred to a method for reinforcing stored data provided in any embodiment of the present invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method for consolidating stored data, comprising:
when the memory is powered on and standby, performing at least one refreshing operation on the storage data of the memory;
determining the retention of the data stored in the memory according to the detection result of the refreshing operation;
and when the retention force of the data stored in the memory is detected to be smaller than a preset value, carrying out reinforcement operation on the stored data of the memory.
2. The method of claim 1, further comprising:
and when the chip selection signal is acquired, interrupting the refreshing operation and executing an external instruction.
3. The method of claim 1, wherein performing at least one refresh operation on the stored data of the memory during power-on standby of the memory comprises:
when a memory is powered on and standby, acquiring a refresh frequency for refreshing stored data of the memory;
and performing a plurality of times of refreshing operation on the stored data of the memory according to the refreshing frequency.
4. The method according to claim 1, wherein the performing a reinforcing operation on the stored data in the memory upon detecting that the retention of the stored data in the memory is less than a preset value comprises:
when the retention force of the stored data in the memory is detected to be smaller than a preset value, acquiring the address of the stored data;
and when the memory is programmed or erased, performing reinforcement operation on the stored data according to the address of the stored data.
5. The method according to any of claims 1 to 4, wherein the reinforcing operation is to increase a voltage threshold or a current margin of a memory cell in which the stored data is located.
6. A reinforcing apparatus for storing data, comprising:
the data refreshing module is used for refreshing the stored data of the memory at least once when the memory is powered on and standby;
the data retention determining module is used for determining the retention of the data stored in the memory according to the detection result of the refreshing operation;
and the data reinforcing module is used for reinforcing the stored data of the memory when the retention force of the stored data in the memory is detected to be smaller than a preset value.
7. The apparatus of claim 6, further comprising:
and the data refreshing interruption module is used for interrupting the refreshing operation and executing an external instruction when the chip selection signal is acquired.
8. The apparatus of claim 6, wherein the data refresh module comprises:
the device comprises a refresh frequency acquisition unit, a refresh frequency generation unit and a refresh frequency generation unit, wherein the refresh frequency acquisition unit is used for acquiring the refresh frequency of the refresh operation of the storage data of the memory when the memory is powered on and standby;
and the data refreshing unit is used for carrying out multiple refreshing operations on the stored data of the memory according to the refreshing frequency.
9. The apparatus of claim 6, wherein the data hardening module comprises:
the address acquisition unit is used for acquiring the address of the stored data when the retention force of the stored data in the memory is detected to be smaller than a preset value;
and the reinforcing operation unit is used for performing reinforcing operation on the storage data according to the address of the storage data when the memory is subjected to programming or erasing operation.
10. The apparatus of any of claims 6 to 9, wherein the reinforcing operation is to increase a voltage threshold or a current margin of a memory cell in which the stored data is located.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261216A (en) * | 2020-03-20 | 2020-06-09 | 长江存储科技有限责任公司 | Control method of three-dimensional memory, control device thereof and storage medium |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637154A (en) * | 2011-02-10 | 2012-08-15 | 三星电子株式会社 | User device performing data retention operation, storage device and data retention method |
| CN102820049A (en) * | 2011-06-09 | 2012-12-12 | 三星电子株式会社 | Method and apparatus for refreshing and data scrubbing memory device |
| US8509430B2 (en) * | 2010-03-15 | 2013-08-13 | Samsung Electronics Co., Ltd. | Storage devices having a security function and methods of securing data stored in the storage device |
| CN104575589A (en) * | 2014-12-27 | 2015-04-29 | 中国电子科技集团公司第三十八研究所 | Radiation-resistant SRAM self-refresh circuit with high utilizable ratio, and self-refresh method of radiation-resistant SRAM self-refresh circuit |
| CN104751893A (en) * | 2013-12-30 | 2015-07-01 | 北京兆易创新科技股份有限公司 | NOR (Not or)-type FLASH reliability enhancement method |
| CN105679360A (en) * | 2016-01-05 | 2016-06-15 | 上海新储集成电路有限公司 | Refreshable nonvolatile memory and refreshing method thereof |
| US9478303B1 (en) * | 2015-04-29 | 2016-10-25 | Sandisk Technologies Llc | System and method for measuring data retention in a non-volatile memory |
| US20170052720A1 (en) * | 2015-08-19 | 2017-02-23 | Phison Electronics Corp. | Data protection method, memory contorl circuit unit and memory storage apparatus |
| CN106920567A (en) * | 2015-12-24 | 2017-07-04 | 北京兆易创新科技股份有限公司 | The method for refreshing and device of a kind of memory |
| US20170337979A1 (en) * | 2016-05-19 | 2017-11-23 | Samsung Electronics Co., Ltd. | Operating method of memory controller controlling non-volatile memory device performing refresh read operation |
| CN108231108A (en) * | 2016-12-14 | 2018-06-29 | 爱思开海力士有限公司 | Memory device and its operating method |
-
2018
- 2018-08-17 CN CN201810940100.0A patent/CN110838314A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8509430B2 (en) * | 2010-03-15 | 2013-08-13 | Samsung Electronics Co., Ltd. | Storage devices having a security function and methods of securing data stored in the storage device |
| CN102637154A (en) * | 2011-02-10 | 2012-08-15 | 三星电子株式会社 | User device performing data retention operation, storage device and data retention method |
| CN102820049A (en) * | 2011-06-09 | 2012-12-12 | 三星电子株式会社 | Method and apparatus for refreshing and data scrubbing memory device |
| CN104751893A (en) * | 2013-12-30 | 2015-07-01 | 北京兆易创新科技股份有限公司 | NOR (Not or)-type FLASH reliability enhancement method |
| CN104575589A (en) * | 2014-12-27 | 2015-04-29 | 中国电子科技集团公司第三十八研究所 | Radiation-resistant SRAM self-refresh circuit with high utilizable ratio, and self-refresh method of radiation-resistant SRAM self-refresh circuit |
| US9478303B1 (en) * | 2015-04-29 | 2016-10-25 | Sandisk Technologies Llc | System and method for measuring data retention in a non-volatile memory |
| US20170052720A1 (en) * | 2015-08-19 | 2017-02-23 | Phison Electronics Corp. | Data protection method, memory contorl circuit unit and memory storage apparatus |
| CN106920567A (en) * | 2015-12-24 | 2017-07-04 | 北京兆易创新科技股份有限公司 | The method for refreshing and device of a kind of memory |
| CN105679360A (en) * | 2016-01-05 | 2016-06-15 | 上海新储集成电路有限公司 | Refreshable nonvolatile memory and refreshing method thereof |
| US20170337979A1 (en) * | 2016-05-19 | 2017-11-23 | Samsung Electronics Co., Ltd. | Operating method of memory controller controlling non-volatile memory device performing refresh read operation |
| CN108231108A (en) * | 2016-12-14 | 2018-06-29 | 爱思开海力士有限公司 | Memory device and its operating method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261216A (en) * | 2020-03-20 | 2020-06-09 | 长江存储科技有限责任公司 | Control method of three-dimensional memory, control device thereof and storage medium |
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