CN106920567A - The method for refreshing and device of a kind of memory - Google Patents
The method for refreshing and device of a kind of memory Download PDFInfo
- Publication number
- CN106920567A CN106920567A CN201510982999.9A CN201510982999A CN106920567A CN 106920567 A CN106920567 A CN 106920567A CN 201510982999 A CN201510982999 A CN 201510982999A CN 106920567 A CN106920567 A CN 106920567A
- Authority
- CN
- China
- Prior art keywords
- time
- memory cell
- threshold voltage
- refresh
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims abstract description 278
- 238000000034 method Methods 0.000 title claims abstract description 44
- 230000014759 maintenance of location Effects 0.000 abstract description 13
- 238000013500 data storage Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Abstract
The embodiment of the invention discloses the method for refreshing and device of a kind of memory, the method for refreshing includes：According to setting refresh time, the time of the threshold voltage of at least one memory cell in the memory is read in control；If the threshold voltage of the memory cell for reading is in flushes threshold value voltage range, control refreshes to the memory cell.The present invention improves the data retention of memory cell, accordingly after whole memory cell refresh in memory, the data retention of memory can be improved and increased the service life, it is ensured that the reliability of data storage, also solve the problems, such as that the data retention of memory cell is poor.
Description
Technical field
The present embodiments relate to memory technology field, more particularly to a kind of memory method for refreshing and dress
Put.
Background technology
The memory cell of Flash flash memories there may be defect in the fabrication process, and such defective flash throws
After entering use, its memory cell might have the risk of loss of data in data storage, and the flash lacks
It is a very slow process to fall into caused loss of data, it is more difficult to discovered.
Causing the defect of the loss of data in memory cell can be divided into 2 kinds：A kind of is relevant with temperature lacking
Fall into, such defect can accelerate to screen out in present volume production test by high temperature；Another kind is and temperature
Unrelated defect, such defect cannot be screened out in volume production test, then it is deposited after the product comes into operation
The data retention of storage unit is poor.
Flash can be refreshed its memory cell by the method for refreshing in the prior art, to improve the holding of its data
Power, the memory cell to present physical block specially in erase process refreshes.If but flash
When memory cell application is read-only application, then data retention cannot be improved by refreshing.
The content of the invention
The embodiment of the present invention provides a kind of method for refreshing and device of memory, to solve the data of memory cell
The problem of confining force difference.
In a first aspect, a kind of method for refreshing of memory is the embodiment of the invention provides, the method for refreshing bag
Include：
According to setting refresh time, the threshold voltage of at least one memory cell in the memory is read in control
Time；
If the threshold voltage of the memory cell for reading is in flushes threshold value voltage range, control to institute
Memory cell is stated to be refreshed.
Further, according at least one memory cell in the setting refresh time control reading memory
The time of threshold voltage includes：
Judge whether current time reaches the setting refresh time；
If the current time has reached the setting refresh time, at least one storage is read single
The threshold voltage of unit.
Further, the detailed process for reading the threshold voltage of at least one memory cell includes：Obtain
Last time refresh address is simultaneously incremented by the last time refresh address, currently to be refreshed initial address, and
According to the current threshold value electricity for refreshing initial address and address reading at least one memory cell after it
Pressure.
Further, according at least one memory cell in the setting refresh time control reading memory
The time of threshold voltage includes：
Last time refresh time is obtained, and calculates the difference between current time and the last time refresh time；
Judge whether the difference is equal to the time span corresponding to the setting refresh time；
If the difference be equal to it is described setting refresh time corresponding to time span, read described at least
One threshold voltage of memory cell, and record the current time.
Further, control refreshes to the memory cell, including：
The threshold voltage of the memory cell is increased to target threshold voltage by control.
Further, also include：After completing to the refreshing of at least one memory cell, last is recorded
Individual access unit address.
Second aspect, the embodiment of the present invention additionally provides a kind of refreshing apparatus of memory, the refreshing apparatus bag
Include：
Threshold voltage read module, for according to setting refresh time, control is read in the memory at least
One time of the threshold voltage of memory cell；
Memory cell refresh module, if the threshold voltage of the memory cell for reading is in is refreshed threshold
In the range of threshold voltage, control refreshes to the memory cell.
Further, the threshold voltage read module includes：
Refresh time judging unit, for judging whether current time reaches the setting refresh time；
First threshold voltage reading unit, if reached the setting refreshing for the current time
Between, then read the threshold voltage of at least one memory cell.
Further, the detailed process of the first threshold voltage reading unit includes：Obtain last time refreshing ground
Location is simultaneously incremented by the last time refresh address, currently to be refreshed initial address, and according to current brush
The threshold voltage of at least one memory cell is read in new initial address and the address after it.
Further, the threshold voltage read module includes：
Time difference computing unit, for obtaining last time refresh time, and calculated current time with the last time
Difference between refresh time；
Time difference judging unit, for judging whether the difference is equal to corresponding to the setting refresh time
Time span；
Second threshold voltage reading unit, if be equal to corresponding to the setting refresh time for the difference
Time span, then read the threshold voltage of at least one memory cell, and when recording described current
Between.
Further, the memory cell refresh module includes：
Threshold voltage elevation unit, for controlling for the threshold voltage of the memory cell to be increased to targets threshold
Voltage.
Further, also include：
Refresh address logging modle, after completing the refreshing at least one memory cell, record is most
Latter access unit address.
The method for refreshing and device of a kind of memory that the present invention is provided, read according to setting refresh time control
The threshold voltage time of memory cell in memory, and if the threshold voltage of the memory cell for reading is in
When in flushes threshold value voltage range, the memory cell is refreshed, which thereby enhance the number of the memory cell
It is corresponding after whole memory cell refresh in memory according to confining force, the number of memory can be improved
According to confining force and increase the service life, it is ensured that the reliability of data storage, also solve the data of memory cell
The problem of the data retention difference of the problem of confining force difference, especially read-only application memory unit.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, institute in being described to embodiment below
The accompanying drawing for needing to use does one and simply introduces, it should be apparent that, drawings in the following description are of the invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of flow chart of memory updating method of offer in the embodiment of the present invention one；
Fig. 2 is a kind of flow chart of memory updating method of offer in the embodiment of the present invention one；
Fig. 3 is a kind of flow chart of memory updating method of offer in the embodiment of the present invention one；
Fig. 4 A are a kind of schematic diagrames of memory refress device of offer in the embodiment of the present invention two；
Fig. 4 B are the schematic diagrames of another memory refress device of offer in the embodiment of the present invention two.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, hereinafter with reference to the embodiment of the present invention
In accompanying drawing, technical scheme is clearly and completely described by implementation method, it is clear that described
Embodiment be a part of embodiment of the invention, rather than whole embodiments.Based on the implementation in the present invention
Example, the every other implementation that those of ordinary skill in the art are obtained under the premise of creative work is not made
Example, belongs to the scope of protection of the invention.
As shown in figure 1, being a kind of flow chart of memory updating method of offer in the embodiment of the present invention one.
The technical scheme of the present embodiment is applicable to improve the situation of the data retention of memory cell in memory, should
Method can be performed by memory refress device, and configuration is applied in memory, and the memory is preferably
Flash memory.
A kind of method for refreshing of memory that the present embodiment is provided, specifically includes following steps：
S110, according to setting refresh time, control read memory at least one memory cell threshold value electricity
The time of pressure.
As described above, being previously provided with setting refresh time in memory, controlled according to the setting refresh time
Read memory in memory cell threshold voltage time, i.e., current time be not up to setting refresh time or
When person is beyond setting refresh time, it is not necessary to read the threshold voltage of memory cell.Refresh time is set herein
In reading memory during memory cell, a threshold voltage for memory cell can be only read, also can control and read
The threshold voltage of multiple memory cell.
It will be understood by those skilled in the art that the region of the memory cell for reading can voluntarily be selected, such as in setting
The threshold voltage of the memory cell of the readable access to memory Zone Full of refresh time or regional area, and storage
Setting refresh time in device can change according to the difference of user.It should be noted that setting refresh time
It is readily adaptable for use in the setting refresh time and controls to read the threshold value electricity of memory cell in follow-up a period of time
Pressure.
In aforesaid operations, the threshold voltage of at least one memory cell is read in setting refresh time, to carry out
Follow-up refresh flow.
If S120, the threshold voltage of the memory cell for reading are in flushes threshold value voltage range, it is right to control
Memory cell is refreshed.
As described above, after reading the threshold voltage of at least one memory cell, it is single for any one storage
Unit, if the threshold voltage of the memory cell is in flushes threshold value voltage range, illustrates in the memory cell
Electronics is lost in serious, threshold voltage reduction, and now the data of memory cell have the risk of loss, then need control
System refreshes to the memory cell.After refreshing to memory cell, the threshold voltage liter of memory cell
It is high, it is ensured that the reliability of data.If the threshold voltage of the memory cell exceeds flushes threshold value voltage range,
Then illustrate that the memory cell is that programming state and data keep well, now for erase status or the memory cell
The memory cell need not be refreshed.
Sets itself, such as threshold of memory cell can be carried out according to the application of client in this flushes threshold value voltage range
Threshold voltage is routinely 7V, and it is 5V~6.5V to set flushes threshold value voltage range.Those skilled in the art can manage
Solution, can pre-set multiple different setting refresh times in memory, will be stored by refreshing at least one times
The memory cell of device carries out refresh all, after the completion of the memory cell refresh all of memory, can be next
Secondary setting refresh time refreshes to memory again, thus keeps the data reliability of memory.
In aforesaid operations, threshold voltage is in memory cell its internal electron stream in flushes threshold value voltage range
Lose, threshold voltage reduction, data retention is poor, refreshing is carried out to such memory cell can improve its data guarantor
Holding force.It will be understood by those skilled in the art that can be carried out to whole memory cell of memory by the method
Refresh, can also extend the service life of memory.
A kind of method for refreshing of memory that the present embodiment is provided, storage is read according to setting refresh time control
The threshold voltage time of memory cell in device, and refresh if the threshold voltage of the memory cell for reading is in
When in threshold voltage ranges, the memory cell is refreshed, the data for which thereby enhancing the memory cell are protected
Holding force, corresponding after whole memory cell refresh in memory, the data that can improve memory are protected
Holding force, also can accordingly improve the service life of memory, it is ensured that the reliability of data storage, also solve and deposit
The data retention difference of the problem of the data retention difference of storage unit, the especially memory cell of read-only application
Problem.
On the basis of above-mentioned technical proposal, as shown in Fig. 2 step S110 according to setting refresh time control
System reads the operation of the time of the threshold voltage of at least one memory cell in memory, can be by following preferred
Mode is realized：
S101, judge whether current time reaches setting refresh time.
As described above, it is preferred to be provided with clock in memory inside, by the recordable memory of the clock when
Between, and refresh time is set by the clock setting.So judge whether current time reaches setting and refresh
The process of time is to gather the current time of the clock as the current time of memory, according to pre- in clock
If setting refresh time, judge whether the current time of memory reaches setting refresh time.This area skill
Art personnel be appreciated that, it is also possible to when the current time and setting for obtaining memory by other means refresh
Between.Refresh time as the time point for setting, such as 25 days 14 November in 2015 are set herein:10 or its
He etc., and memory inside storage set refresh time for multiple.
If S102, current time have reached setting refresh time, the threshold of at least one memory cell is read
Threshold voltage.
As described above, if it is determined that the current time of memory has reached setting refresh time, then reading memory
In memory cell threshold voltage.If the capacity of memory is larger, n region can be divided the memory into,
By n setting refresh time each region is read out respectively, refresh flow, to complete to memory
Refreshing.Such as refresh time (14 is set in this time:00) the 2nd storage list in region of memory, is read
The threshold voltage of unit sets refresh time (19 to carry out follow-up process in next time:00) memory, is read
3rd threshold voltage of the memory cell in region is carrying out follow-up process.It should be noted that can sequentially read
Each region of access to memory, also can unordered each region for reading memory.
Or, if the capacity of memory is smaller, may be selected, in setting refresh time, to directly read each and deposit
The threshold voltage of storage unit is carrying out follow-up process.It will be understood by those skilled in the art that storage to be read
The region of unit can voluntarily be selected.
After setting refresh time reads the threshold voltage of at least one memory cell, step S120 is can perform
If reading memory cell threshold voltage be in flushes threshold value voltage range in, control to memory cell
The operation for being refreshed.Will not be described in detail herein.
If it should be noted that dividing the memory into n region, being read out to each region successively, being brushed
During new technological process, then the operation of the threshold voltage for reading at least one memory cell in step S102 is excellent
Choosing can be realized by process in detail below：Obtain last time refresh address and last time refresh address be incremented by,
Currently to be refreshed initial address, and read at least according to current initial address and the address after it refreshed
One threshold voltage of memory cell.
Specifically, last of last time refreshing can be recorded after the completion of last time refreshes at least one memory cell
Individual access unit address, then last storage when carrying out obtaining last time refreshing when currently once refreshing first
The address of unit is as last time refresh address.The last time refresh address is incremented by, then the ground after being incremented by
Location is the initial address of the current memory cell for refreshing, and corresponding storage is read according to the current initial address that refreshes
The threshold voltage of unit, and successively according to the current at least one address reading refreshed after initial address
The threshold voltage of corresponding memory cell, thus completes the brush to the memory cell of regional area in memory
Newly.
If it will be understood by those skilled in the art that can be deposited to the whole of memory in each setting refresh time
Storage unit is refreshed, then need not record last time refresh address, it is only necessary to which memory is addressed with to every successively
One memory cell is refreshed.
On the basis of above-mentioned technical proposal, as shown in figure 3, step S110 according to setting refresh time control
System reads the operation of the time of the threshold voltage of at least one memory cell in memory, can be by following preferred
Mode is realized：
S111, acquisition last time refresh time, and calculate the difference between current time and last time refresh time.
As described above, it is preferred to be provided with clock in memory inside, memory inside is stored with history when refreshing
Between, the last time refresh time of memory is directly therefrom obtained, i.e., the last refresh time.Adopted by clock
Collect the current time of memory, and calculate the difference between current time and last time refresh time, by the difference
As the condition judged whether in current time reading memory threshold voltage.
S112, judge difference whether be equal to setting refresh time corresponding to time span.
As described above, memory inside is provided with setting refresh time, this sets refresh time as the one of setting
Individual time span, such as 18h, 36h etc., therefore set refresh time as time interval.Whether judge difference
It it is time of the current time apart from last time refresh time equal to the time span corresponding to setting refresh time
Whether interval reaches setting refresh time, using the time span of the setting refresh time as reading memory
The foundation of memory cell threshold voltage, is also the trigger condition of method for refreshing.
If S113, difference are equal to the time span corresponding to setting refresh time, read at least one and deposit
The threshold voltage of storage unit, and record current time.
If as described above, difference be equal to setting refresh time corresponding to time span, when illustrating current
Between apart from last time refresh time time interval reach memory setting setting refresh time, now can read
The threshold voltage of memory cell, to trigger the refreshing to memory.Reading the threshold voltage of memory cell
It is also desirable to record current time, the Rule of judgment of memory is refreshed as next time.If difference is not
Equal to setting refresh time corresponding to time span, then illustrate current time apart from last time refresh time when
Between interval be not up to memory set setting refresh time, memory need not now be refreshed.
This it should be noted that set refresh time time span can sets itself be steady state value, also can voluntarily set
The time span of fixed different setting refresh time.
After setting refresh time reads the threshold voltage of at least one memory cell, step S120 is can perform
If reading memory cell threshold voltage be in flushes threshold value voltage range in, control to memory cell
The operation for being refreshed.Will not be described in detail herein.
Exemplary, on the basis of above-mentioned technical proposal, the control of step S120 is carried out to memory cell
The operation of refreshing, preferably may be accomplished by, and specifically include：Control the threshold value electricity of memory cell
Pressure is increased to target threshold voltage.
As described above, extension of the memory cell with use time, electrons part of write-in is lost in it,
The threshold voltage reduction of corresponding memory cell.When certain voltage value is arrived in the threshold voltage reduction of memory cell
Afterwards, data have the risk of loss, now need to reprogram, but the nothing if memory cell is for read-only application
Method is programmed to memory cell, therefore prior art cannot improve the data guarantor of the memory cell of read-only application
The problem of holding force difference.And by setting refresh time in the present embodiment, with the regular hour to memory cell
Refreshed so that memory cell is refreshed in time when electronics has been lost in, it is ensured that the number of memory cell
According to confining force, especially to the memory cell of read-only application, the memory cell for solving read-only application cannot be protected
Demonstrate,prove the problem of data reliability.
Refresh for memory cell, be substantially the electronics loss in memory cell so that threshold voltage reduction
When, improve the threshold voltage of memory cell so that the situation that the electronics of memory cell is full of, it is ensured that data
Reliability.Program voltage can be applied to raise memory cell by the grid of memory cell and drain electrode herein
Threshold voltage, that is, reprogram to reach the effect of refresh of memory cells.Storage is provided with memory single
The target threshold voltage of unit, when the threshold voltage of memory cell reaches target threshold voltage, the electricity of memory cell
Son is full of, and the data retention of memory cell is optimal.
, it is necessary to illustrate on the basis of above-mentioned technical proposal, if according to setting refresh time, only controlling
The refresh time of the threshold voltage of partial memory cell in memory is read, then on above-mentioned method for refreshing, also
Including：After completing to the refreshing of at least one memory cell, last access unit address is recorded.I.e.
The refreshing of the memory cell to the subregion of memory is realized on this time setting refresh time, in the region
After the completion of refreshing, last access unit address of the region is recorded, in order to when next time, setting refreshed
Between when, other memory cell after the memory unit address are read out and refreshed.
As shown in Figure 4 A and 4 B shown in FIG., it is two kinds of memory refress devices of offer in the embodiment of the present invention two
Schematic diagram.The technical scheme of the present embodiment is applicable to improve the data retention of memory cell in memory
Situation, any one memory updating method described in the executable above-described embodiment of the device, but be not limited to only
The memory updating method described in above-described embodiment is performed, device configuration is applied, preferably deposited in memory
Reservoir is flash memory.
A kind of refreshing apparatus of memory that the present embodiment is provided, including：The He of threshold voltage read module 210
Memory cell refresh module 220.
Wherein, threshold voltage read module 210 is used for according to setting refresh time, and control is read in memory
The time of the threshold voltage of at least one memory cell；If memory cell refresh module 220 is used for what is read
The threshold voltage of memory cell is in flushes threshold value voltage range, and control refreshes to memory cell.
As shown in Figure 4 A, alternatively threshold voltage read module 210 includes：Refresh time judging unit 201
With first threshold voltage reading unit 202.
Wherein, refresh time judging unit 201 is used to judge whether current time reaches setting refresh time；
If first threshold voltage reading unit 202 has reached setting refresh time for current time, read to
A few threshold voltage for memory cell.
Alternatively, the detailed process of first threshold voltage reading unit 202 includes：Obtain last time refresh address
And the last time refresh address is incremented by, currently to be refreshed initial address, and according to current refreshing
The threshold voltage of at least one memory cell is read in initial address and the address after it.
As shown in Figure 4 B, alternatively threshold voltage read module 210 includes：Time difference computing unit
211st, time difference judging unit 212 and second threshold voltage reading unit 213.
Wherein, time difference computing unit 211 is used to obtain last time refresh time, and calculate current time with
Difference between last time refresh time；Time difference judging unit 212 is used to judge whether difference is equal to setting
Time span corresponding to refresh time；If second threshold voltage reading unit 213 is equal to for difference and sets
Determine the time span corresponding to refresh time, then read the threshold voltage of at least one memory cell, and record
Current time.
Alternatively, memory cell refresh module 220 includes：Threshold voltage elevation unit 221.Wherein, threshold
Threshold voltage elevation unit, for controlling the threshold voltage by memory cell to be increased to target threshold voltage.
Alternatively, also include：Refresh address logging modle 230.Wherein, refresh address logging modle 230
After completing the refreshing at least one memory cell, last access unit address is recorded.
A kind of refreshing apparatus of memory that the present embodiment is provided, its course of work is：It is preferred that in memory
Portion designs a clock, and timing is carried out by the clock.When the setting refresh time that timing to system is set,
Start the refresh flow of triggering memory cell.It is first if memory is divided into herein repeatedly carries out full chip refresh
The address that reading last time refreshes first is needed, the memory cell region for being currently needed for refreshing is determined according to the address.
Threshold voltage reading is carried out to the memory cell in selected memory cell region, and when the memory cell for reading
Threshold voltage be in flushes threshold value voltage range in when control memory cell is refreshed, to select it is every
One memory cell performs refresh flow.After the completion of refreshing, last memory cell of selection area is recorded
Address, or record after to last access unit address of selection area be incremented by.Work as arrival
When setting refresh time next time, the address of record is read in advance, and the brush of successive memory cells is carried out with this
Newly, the refreshing to full chip can be completed by repeatedly refreshing.
Also setting refresh time can be selected in once when reaching, directly to memory in whole memory cell perform
Refresh flow, then this kind of refreshing mode is without record storage unit address.
The refreshing apparatus of the memory that the present embodiment is provided, regardless of whether erasing move is performed to memory,
Memory can be refreshed, to ensure the reliability of data, when optional memory is under holding state
Refreshed.The device can realize that memory refreshes to memory cell automatically in the standby state, to carry
The data retention of memory cell in memory high.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.Those skilled in the art
It will be appreciated that the invention is not restricted to specific embodiment described here, can enter for a person skilled in the art
The various obvious changes of row, readjust and substitute without departing from protection scope of the present invention.Therefore, though
The present invention is described in further detail by above example so, but the present invention be not limited only to
Upper embodiment, without departing from the inventive concept, can also include more other Equivalent embodiments,
And the scope of the present invention is determined by scope of the appended claims.
Claims (12)
1. a kind of method for refreshing of memory, it is characterised in that including：
According to setting refresh time, the threshold voltage of at least one memory cell in the memory is read in control
Time；
If the threshold voltage of the memory cell for reading is in flushes threshold value voltage range, control to institute
Memory cell is stated to be refreshed.
2. method for refreshing according to claim 1, it is characterised in that according to setting refresh time control
The time that system reads the threshold voltage of at least one memory cell in the memory includes：
Judge whether current time reaches the setting refresh time；
If the current time has reached the setting refresh time, at least one storage is read single
The threshold voltage of unit.
3. method for refreshing according to claim 2, it is characterised in that read described at least one and deposit
The detailed process of the threshold voltage of storage unit includes：Obtain last time refresh address and to the last time refresh address
It is incremented by, currently to be refreshed initial address, and is refreshed initial address and the ground after it according to current
Read the threshold voltage of at least one memory cell in location.
4. method for refreshing according to claim 1, it is characterised in that according to setting refresh time control
The time that system reads the threshold voltage of at least one memory cell in the memory includes：
Last time refresh time is obtained, and calculates the difference between current time and the last time refresh time；
Judge whether the difference is equal to the time span corresponding to the setting refresh time；
If the difference be equal to it is described setting refresh time corresponding to time span, read described at least
One threshold voltage of memory cell, and record the current time.
5. method for refreshing according to claim 1, it is characterised in that control is to the memory cell
Refreshed, including：
The threshold voltage of the memory cell is increased to target threshold voltage by control.
6. according to any described method for refreshing of claim 1-5, it is characterised in that also include：
After completing to the refreshing of at least one memory cell, last access unit address is recorded.
7. a kind of refreshing apparatus of memory, it is characterised in that including：
Threshold voltage read module, for according to setting refresh time, control is read in the memory at least
One time of the threshold voltage of memory cell；
Memory cell refresh module, if the threshold voltage of the memory cell for reading is in is refreshed threshold
In the range of threshold voltage, control refreshes to the memory cell.
8. refreshing apparatus according to claim 7, it is characterised in that the threshold voltage reads mould
Block includes：
Refresh time judging unit, for judging whether current time reaches the setting refresh time；
First threshold voltage reading unit, if reached the setting refreshing for the current time
Between, then read the threshold voltage of at least one memory cell.
9. refreshing apparatus according to claim 8, it is characterised in that the first threshold voltage is read
The detailed process for taking unit includes：Obtain last time refresh address and the last time refresh address be incremented by,
Currently to be refreshed initial address, and refresh initial address and described in the address after it reads according to current
The threshold voltage of at least one memory cell.
10. refreshing apparatus according to claim 7, it is characterised in that the threshold voltage reads mould
Block includes：
Time difference computing unit, for obtaining last time refresh time, and calculated current time with the last time
Difference between refresh time；
Time difference judging unit, for judging whether the difference is equal to corresponding to the setting refresh time
Time span；
Second threshold voltage reading unit, if be equal to corresponding to the setting refresh time for the difference
Time span, then read the threshold voltage of at least one memory cell, and when recording described current
Between.
11. refreshing apparatus according to claim 7, it is characterised in that the memory cell refreshes mould
Block includes：
Threshold voltage elevation unit, for controlling for the threshold voltage of the memory cell to be increased to targets threshold
Voltage.
12. according to any described refreshing apparatus of claim 7-11, it is characterised in that also include：
Refresh address logging modle, after completing the refreshing at least one memory cell, record is most
Latter access unit address.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510982999.9A CN106920567A (en) | 2015-12-24 | 2015-12-24 | The method for refreshing and device of a kind of memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510982999.9A CN106920567A (en) | 2015-12-24 | 2015-12-24 | The method for refreshing and device of a kind of memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106920567A true CN106920567A (en) | 2017-07-04 |
Family
ID=59456465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510982999.9A Pending CN106920567A (en) | 2015-12-24 | 2015-12-24 | The method for refreshing and device of a kind of memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106920567A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110838314A (en) * | 2018-08-17 | 2020-02-25 | 北京兆易创新科技股份有限公司 | Method and device for reinforcing stored data |
| CN111785315A (en) * | 2020-06-29 | 2020-10-16 | 深圳市芯天下技术有限公司 | Method, system, storage medium and terminal for reducing erasing interference and erasing time |
| CN116434800A (en) * | 2023-06-06 | 2023-07-14 | 长鑫存储技术有限公司 | Refreshing circuit and memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1492446A (en) * | 2002-09-06 | 2004-04-28 | 夏普株式会社 | Non-volatile semiconductor memory device and rewriting method |
| CN1647212A (en) * | 2002-04-18 | 2005-07-27 | 矽利康创新有限公司 | Data storage device and refreshing method for use with such device |
| EP1858163A1 (en) * | 2006-05-17 | 2007-11-21 | Fujitsu Ltd. | Oscillator circuit generating oscillating signal having stable cycle |
-
2015
- 2015-12-24 CN CN201510982999.9A patent/CN106920567A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1647212A (en) * | 2002-04-18 | 2005-07-27 | 矽利康创新有限公司 | Data storage device and refreshing method for use with such device |
| CN1492446A (en) * | 2002-09-06 | 2004-04-28 | 夏普株式会社 | Non-volatile semiconductor memory device and rewriting method |
| EP1858163A1 (en) * | 2006-05-17 | 2007-11-21 | Fujitsu Ltd. | Oscillator circuit generating oscillating signal having stable cycle |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110838314A (en) * | 2018-08-17 | 2020-02-25 | 北京兆易创新科技股份有限公司 | Method and device for reinforcing stored data |
| CN111785315A (en) * | 2020-06-29 | 2020-10-16 | 深圳市芯天下技术有限公司 | Method, system, storage medium and terminal for reducing erasing interference and erasing time |
| CN111785315B (en) * | 2020-06-29 | 2021-03-23 | 深圳市芯天下技术有限公司 | Method, system, storage medium and terminal for reducing erasing interference and erasing time |
| CN116434800A (en) * | 2023-06-06 | 2023-07-14 | 长鑫存储技术有限公司 | Refreshing circuit and memory |
| CN116434800B (en) * | 2023-06-06 | 2023-08-18 | 长鑫存储技术有限公司 | Refreshing circuit and memory |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111009280A (en) | Storage device and operation method of storage device | |
| CN106920567A (en) | The method for refreshing and device of a kind of memory | |
| CN106776095A (en) | SSD solid state hard disc data reliability intelligent detecting methods and detection means | |
| CN102568569B (en) | Nonvolatile semiconductor memory member and cache program method thereof | |
| CN101206921A (en) | Method for reducing storage unit write-in disorder | |
| CN1965371A (en) | Erase method for multi-level bit flash memory | |
| CN106158016A (en) | The relative method of integrated circuit | |
| CN107636623A (en) | The period is scrubbed in inspection based on power state | |
| CN103811068B (en) | The method for deleting and system of nonvolatile storage | |
| CN107527648A (en) | The method for refreshing and system of memory | |
| CN102903395A (en) | Reliability testing method for memories | |
| CN104766629A (en) | Method for enhancing reliability of NAND type FLASH | |
| CN108154899A (en) | Flush memory device and its method for deleting | |
| CN104699415A (en) | Method and device for controlling writing in of solid hard disk | |
| CN109584933A (en) | Semiconductor devices | |
| CN101833993B (en) | Method for enlarging programming window of charge trapping memory cells and non-volatile memory cells applying the method | |
| CN106098103B (en) | The replacement method of bad point unit in a kind of nonvolatile memory | |
| CN102005243A (en) | Differential flash memory device and method for enhancing durability of same | |
| CN108376551A (en) | Storage device and the method that its data is refreshed | |
| CN102750235A (en) | Method for performing data storage to nonvolatile memory and control device | |
| CN109358814A (en) | A kind of method of EEPROM storage | |
| CN106802811A (en) | program writing method and device | |
| CN104221091B (en) | Adaptively sequencing or flash memory block of erasing | |
| CN108305663A (en) | The interference test method of SONOS flash memories | |
| CN105551524A (en) | Erasure method for memory unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170704 |