CN110828501A - 电子装置 - Google Patents
电子装置 Download PDFInfo
- Publication number
- CN110828501A CN110828501A CN201910708175.0A CN201910708175A CN110828501A CN 110828501 A CN110828501 A CN 110828501A CN 201910708175 A CN201910708175 A CN 201910708175A CN 110828501 A CN110828501 A CN 110828501A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- electronic device
- light
- emitting unit
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000010410 layer Substances 0.000 claims description 116
- 239000011241 protective layer Substances 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 9
- 239000003086 colorant Substances 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 6
- 241001270131 Agaricus moelleri Species 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims 4
- 238000006243 chemical reaction Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 11
- 238000000149 argon plasma sintering Methods 0.000 description 10
- 235000019557 luminance Nutrition 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 3
- -1 but not limited to Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133612—Electrical details
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/13—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body combined with thin-film or thick-film passive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133613—Direct backlight characterized by the sequence of light sources
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0613—The adjustment depending on the type of the information to be displayed
- G09G2320/062—Adjustment of illumination source parameters
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
- G09G2320/064—Adjustment of display parameters for control of overall brightness by time modulation of the brightness of the illumination source
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Planar Illumination Modules (AREA)
Abstract
本发明提供一种电子装置,其包括驱动电路基板以及多个发光单元。驱动电路基板包括多个主动元件,发光单元设置于驱动电路基板上,其中各发光单元分别电连接相应的主动元件,其中主动元件中的一个提供一第一电流到相应的发光单元,使发光单元的发光效率位于70%到100%的范围中。
Description
技术领域
本发明涉及一种电子装置,具体涉及一种具有多个发光单元的电子装置。
背景技术
由于发光二极管具有体积小、效率高、耗电量低、寿命长、反应速度快、演色度高又不含对环境有害的汞等优点,因此已广泛地应用于人们日常的照明系统以及显示设备中。一般发光二极管在不同的操作电流下会有不同的发光效率。在现有的显示设备的应用中,为降低成本,发光二极管会设计为操作在较高的操作电流,以使单颗发光二极管可产生较大的发光亮度,以较少数量的发光二极管的成本下获得最佳的亮度。然而,当由主动元件控制的发光二极管应用为液晶显示设备的背光源时,较多数量的发光二极管操作在较高的操作电流,会造成驱动发光二极管的能源浪费。
发明内容
依据一实施例,本发明提供一种电子装置,其包括驱动电路基板以及多个发光单元。驱动电路基板包括多个主动元件,发光单元设置于驱动电路基板上,其中各所述发光单元分别电连接相应的所述主动元件,其中所述主动元件的一个提供一第一电流到相应的所述发光单元,使所述发光单元的发光效率位于70%到100%的范围中。
依据一实施例,本发明提供一种电子装置,其用于显示0到N的灰阶值,且电子装置包括驱动电路基板以及发光单元。驱动电路基板包括一主动元件。发光单元设置于驱动电路基板上,其中发光单元在提供第一电流时具有最高发光效率。当电子装置显示的灰阶值为N时,主动元件提供第二电流到发光单元,且第二电流大于或等于第一电流。
附图说明
图1所示为本发明第一实施例的电子装置的剖视示意图;
图2所示为本发明一实施例的驱动电路基板的剖视示意图;
图3所示为本发明产生不同颜色的发光单元的发光效率与操作电流的关系以及发光单元的操作电流与发光强度的关系的示意图;
图4所示为本发明第一实施例的一变化实施例的电子装置的剖视示意图;
图5所示为本发明第二实施例的电子装置的剖视示意图;
图6所示为本发明第二实施例的发光单元的操作电流的时序示意图;
图7所示为本发明第二实施例的第一变化实施例的电子装置的剖视示意图;
图8所示为本发明第二实施例的第二变化实施例的电子装置的剖视示意图;
图9所示为本发明第二实施例的第三变化实施例的电子装置的剖视示意图;
图10所示为本发明第二实施例的第四变化实施例的电子装置的剖视示意图;以及
图11所示为本发明第二实施例的第五变化实施例的电子装置的剖视示意图。
附图标记说明:100、200、300、350、400、500、600、700-电子装置;102-驱动电路基板;104、204、304、354、404、404a、404b、404c-发光单元;104a、304a-第一发光单元;104b、304b-第二发光单元;104c、304c-第三发光单元;106-主动元件;106a-第一主动元件;106b-第二主动元件;106c-第三主动元件;108、388-基板;110-电极;G-闸极;GI-闸极绝缘层;SE-半导体层;S-源极;D-汲极;112、212-封装体;114-载板;116、216-封胶层;118-接脚;120-非自发光面板;120a-扩散板;120b-增亮膜;120c-液晶面板;122-背光模块;224-光转换粒子;384-光转换层;384a-第一光转换层;384b-第二光转换层;384c-第三光转换层;386-像素定义层;386a、390a、392a-开口;390-遮光层;392-分隔墙;394-光散射层;396a-第一彩色滤光层;396b-第二彩色滤光层;396c-第三彩色滤光层;398-黏着层;426、526、726-第一保护层;528、628-保护区块;630-第二保护层;732a、732b、732c-第三保护层;PX-像素;SPX-子像素;R1、R2-范围;C1、C2、C3-曲线;PK1、PK2-峰值;I1-第一电流值;I2-第二电流值;I3-第三电流值;I4-第四电流值;A1、A2-箭头;O1、O2-起点;S1-第一信号;S2-第二信号;P-脉冲电流;I0、IP-电流值;W-时间宽度;T1、T4-厚度;T2、T3-间距。
具体实施方式
下文结合具体实施例和附图对本发明的内容进行详细描述,且为了使本发明的内容更加清楚和易懂,下文各附图为可能为简化的示意图,且其中的元件可能并非按比例绘制。并且,附图中的各元件的数量与尺寸仅为示意,并非用于限制本发明的范围。
本发明通篇说明书与所附的权利要求中会使用某些词汇来指称特定元件。本领域技术人员应理解,电子设备制造商可能会以不同的名称来指称相同的元件,且本文并未意图区分那些功能相同但名称不同的元件。在下文说明书与权利要求书中,「含有」与「包括」等词均为开放式词语,因此应被解释为「含有但不限定为…」之意。还应当理解,当一元件被称作"耦接"到另一元件(或其变型)时,它可以直接连接到另一元件或通过一或多个元件间接地连接(例如,电性连接)到另一元件。
须说明的是,下文中不同实施例所提供的技术方案可相互替换、组合或混合使用,以在未违反本发明精神的情况下构成另一实施例。
请参考图1,其所示为本发明第一实施例的电子装置的剖视示意图。电子装置100包括驱动电路基板102以及多个发光单元104,其中发光单元104设置于驱动电路基板102上。驱动电路基板102包括多个主动元件106,分别电连接相应的发光单元104,并用以提供电流到相应的发光单元104,使发光单元104产生对应的光线。
图2所示为本发明一实施例的驱动电路基板的剖视示意图。具体来说,驱动电路基板102还可包括一基板108,且主动元件106形成于基板108上。举例来说,基板108可包括可挠性基板材料或硬质基板材料,例如聚酰亚胺(PI)、聚乙烯对苯二甲酸酯(PET)、聚碳酸酯(PC)、聚醚砜(PES)、聚对苯二甲酸丁二醇酯(PBT)、聚萘二甲酸乙二醇酯(PEN)、聚芳酯(PAR)、压克力、玻璃、石英、蓝宝石、其他适当的材料或其上述组合,但不以此为限。
如图2所示,本实施例的驱动电路基板102可例如为薄膜晶体管基板,且主动元件106可例如包括薄膜晶体管。举例来说,各发光单元104可通过对应的薄膜晶体管提供电流。在一些实施例中,薄膜晶体管可以阵列方式排列在基板108上,并通过线路电连接至驱动元件或控制元件,例如通过多条数据线、多条扫描线与多条电源线电连接,但不以此为限。在一些实施例中,主动元件106可包括至少一薄膜晶体管。举例来说,主动元件106可包括开关薄膜晶体管与驱动薄膜晶体管,其中开关薄膜晶体管用以切换驱动薄膜晶体管的开启与关闭,驱动薄膜晶体管电连接电源线与对应的发光单元,用以提供电流至对应的发光单元,但本发明不以此为限。在一些实施例中,驱动电路基板102可包括两电极110,设置于其表面,用以电连接发光单元104。其中一电极110可电连接薄膜晶体管,而另一电极110可电连接共同电压源或接地。在一些实施例中,薄膜晶体管可包括闸极G、闸极绝缘层GI、半导体层SE、源极S与汲极D。本发明的薄膜晶体管不以图2所示为限,也可为其他类型的薄膜晶体管。
如图1所示,在一些实施例中,发光单元104可例如为发光二极管,但不以此为限。于一些实施例中,发光二极管可例如为小型发光二极管(mini light-emitting diode,mini LED)芯片、微型发光二极管(micro light-emitting diode,micro LED)芯片、有机发光二极管(organic light-emitting diode,OLED)、量子点发光二体(quantum dot light-emitting diode,QLED)、其他类型的发光二极管或上述的组合,但不以此为限。发光二极管可例如为单面(顶面)发光、四面(四侧面)发光或五面(顶面与四侧面)发光类型。
如图1所示,在一些实施例中,电子装置100可包括多个封装体112,且发光单元104中的至少一个设置于对应的封装体112中的一个中。各封装体112包括一载板114以及一封胶层116,其中发光单元104设置于载板114上,且封胶层116用以将发光单元104密封于载板114上。举例来说,各封装体112中可设置有至少三个发光单元104,例如设置有一第一发光单元104a、一第二发光单元104b与一第三发光单元104c,且第一发光单元104a、第二发光单元104b与第三发光单元104c分别用以产生能混和出白光的三种不同颜色光,例如可分别包括红色发光二极管、绿色发光二极管与蓝色发光二极管,但不以此为限。在此情况下,各封装体112可包括多个接脚118,其中多个接脚118电连接到多个主动元件106,使得各主动元件106可个别提供电流至对应的发光单元104,而其中一个接脚118作为第一发光单元104a、一第二发光单元104b与一第三发光单元104c的共阴极/共阳极接脚。举例来说,主动元件106可包括第一主动元件106a、第二主动元件106b与第三主动元件106c,分别提供对应的电流至第一发光单元104a、第二发光单元104b与第三发光单元104c。在一些实施例中,封胶层116可例如包括环氧树脂或硅胶。在一些实施例中,载板114可例如为金属支架。在一些实施例中,载板114也可例如为半导体基底,且载板114可包括静电保护元件或驱动电路,以提高驱动效率或具有额外的功能。于一些实施例中,静电保护元件可例如为齐纳二极管。于一些实施例中,半导体基底可例如包括硅晶圆、砷化镓、砷化铟镓、磷化铟、氮化镓或碳化硅,但不限于此。
请参考图3且一并参考图1。图3所示为本发明产生不同颜色的发光单元的发光效率与操作电流的关系以及发光单元的操作电流与发光强度的关系的示意图,其中曲线C1代表产生一颜色光的发光单元104的发光效率与操作电流的关系,曲线C2代表产生另一颜色光的发光单元104的发光效率与操作电流的关系,曲线C3代表发光单元104的操作电流与发光强度的关系。举例来说,曲线C1可代表蓝色发光二极管(第三发光单元104c)的发光效率与操作电流的关系曲线,曲线C2可代表红色发光二极管(第一发光单元104a)的发光效率与操作电流的关系曲线。在一些实施例中,曲线C1也可代表绿色发光二极管(第二发光单元104b)的发光效率与操作电流的关系曲线。于图3中,发光单元104的发光效率是归一化后的数值。也就是说,发光效率的峰值被其自身相除而归一化为1。于本实施例中,针对曲线C1的发光单元104(第二发光单元104b或第三发光单元104c)而言,主动元件106中的一个提供一电流到相应的发光单元104,使发光单元104的操作电流(即主动元件106所提供的电流)位于一范围R1中,且发光单元104的发光效率可位于70%到100%的范围中,其中曲线C1的峰值PK1代表当主动元件106提供到第二发光单元104b或第三发光单元104c的电流为第三电流值I3时第二发光单元104b或第三发光单元104c的最高发光效率。举例来说,范围R1可从第一电流值I1到第二电流值I2。针对曲线C2的发光单元104(第一发光单元104a)而言,主动元件106中的另一个提供另一电流到相应的发光单元104,使发光单元104的操作电流(即另一主动元件106所提供的另一电流)位于另一范围R2中,且发光单元104的发光效率可位于70%到100%的范围中,其中曲线C2的峰值PK2代表当主动元件106提供到第一发光单元104a的电流为第四电流值I4时第一发光单元104a的最高发光效率。举例来说,范围R2可大于第一电流值I1。在一些实施例中,第一发光单元104a的操作电流(即主动元件106提供到第一发光单元104a的电流)可不同于第二发光单元104b的操作电流(即另一主动元件106提供到第二发光单元104b的电流)或第三发光单元104c的操作电流(即又一主动元件106提供到第三发光单元104c的电流)。
在本实施例中,各主动元件106提供到相应的发光单元104的电流是位于范围R1或R2中,以使发光单元104的发光效率可位于70%到100%的范围中,藉此可降低发光单元104的功率消耗。举例来说,主动元件106提供到第一发光单元104a的电流可位于范围R2中,主动元件106提供到第二发光单元104b的电流与第三发光单元104c的电流可位于范围R1中。在图1的实施例中,电子装置100可例如为显示设备,并包括非自发光面板120以及背光模块122。并且,本实施例的驱动电路基板102与发光单元104可包括在背光模块122中,以作为产生背光的元件,但本发明不以此为限。非自发光面板120设置于发光单元104上。于一些实施例中,非自发光面板120可例如为液晶显示面板,但不以此为限。举例来说,液晶显示面板可包括扩散板120a、增亮膜120b、下偏光片、液晶面板120c(其包括阵列基板、液晶层与彩色滤光片层)以及上偏光片,但不以此为限。于一些实施例中,背光模块122可例如为直下式的背光模块,且发光单元104设置于非自发光面板120的正下方。在一些实施例中,电子装置100可例如为感测装置(sensing device)或天线。
值得说明的是,当发光单元104应用于背光模块122中时,发光单元104在显示设备显示的过程中是持续恒亮,也就是持续产生光线。在现有背光模块的发光二极管中,为了达到所需的背光亮度(即图3中的发光强度),一般通过提高发光二极管的操作电流到对应小于70%的发光效率的大小(例如对应图3所示的箭头A1的起点O1的电流值)。然而,在本实施例中,通过调降操作电流(如图3所示的箭头A1的方向)使发光单元104的操作电流位在对应发光效率为70%到100%的范围中,可降低发光单元104的功率损耗。举例来说,本实施例各发光单元104的操作电流可位于曲线C1的峰值PK1的右侧(或曲线C2的峰值PK2的右侧)且对应发光效率为70%到100%的范围中。虽然单一发光单元104的发光强度下降(如图3所示的曲线C3),但本实施例的电子装置100中的发光单元104的数量可被增加至大于现有发光二极管的数量,以使所有发光单元104所产生的亮度可达到所需的背光亮度。在另一实施例中,也可在与现有发光二极管的数量相当的情况下,将发光单元104的尺寸(或发光面积)设计成大于现有发光二极管的尺寸(或发光面积),如此一来,即使调降操作电流,仍可使所有发光单元104所产生的亮度达到所需的背光亮度。举例来说,发光单元104在对角线为1英寸的区域中的数量大于或等于10。也就是说,在5寸显示器中,发光单元104的数量可大于或等于50颗。或者,在65寸的显示器中,发光单元104的数量可大于或等于650颗。并且,本实施例的电子装置100中的发光单元104可个别地由相应的主动元件106控制发光与不发光。由此可知,本实施例的电子装置100可降低驱动发光单元104的功率损耗,或提升显示时的对比度。但在另外一个实施例中,背光模块122可搭配电子装置100的HDR(High dynamic range)功能,使发光单元104能够产生不同的亮度。进一步来说,电子装置100可用于显示0到N的灰阶,其中N例如为255。当电子装置100显示的灰阶为高灰阶时,例如N/2(128)灰阶以上或是在N(255)灰阶,发光单元104的操作电流可位于曲线C1的峰值PK1的右侧或曲线C2的峰值PK2的右侧。例如,在N/2(128)灰阶以上或是在N(255)灰阶,第二发光单元104b或第三发光单元104c的操作电流可大于或等于第三电流值I3,第一发光单元104a的操作电流可大于或等于第四电流值I4。举例来说,背光模块122可以依据发光单元104所需产生的亮度而将操作电流设定为位于曲线C1、C2的峰值PK1、PK2的左侧(小于或等于第三电流值I3或第四电流值I4)或是峰值PK1、PK2的右侧(大于或等于第三电流值I3或第四电流值I4)。须说明的是,本发明的灰阶是指电子装置100中所针对不同亮度所定义的灰阶值,而发光单元的操作电流则是用于使发光单元呈现出不同的亮度。
图4所示为本发明第一实施例的一变化实施例的电子装置的剖视示意图。在本变化实施例的显示设备200中,设置于各封装体212中的发光单元204可产生一第一颜色光。举例来说,发光单元204可包括至少一个发光二极管,换言之,各封装体212中可设置有单一发光二极管,或者各封装体212中设置有产生相同第一颜色光的多个发光二极管。并且,封胶层216可包括多个光转换粒子224,用以将第一颜色光转换为一第二颜色光。举例来说,发光单元204可例如包括蓝色发光二极管,且光转换粒子224可例如包括能将蓝光转换为白光或其他颜色光的材料,如荧光材料、磷光材料、量子点材料,但不限于此。在此情况下,各封装体212可包括两个接脚118,其中一个接脚118电连接至一主动元件106,另一个接脚118作为共阴极/共阳极接脚。在一些实施例中,载板114可例如为金属支架。在一些实施例中,载板114也可例如为半导体基底,且基底可包括静电保护元件或驱动电路,以提高驱动效率或具有额外的功能。于一些实施例中,静电保护元件可例如为齐纳二极管。于一些实施例中,半导体基底可例如包括硅晶圆、砷化镓、砷化铟镓、磷化铟、氮化镓或碳化硅,但不限于此。
本发明的电子装置并不以上述实施例为限,且可具有不同的变化实施例或其他实施例。为简化说明,下文中其他实施例将使用与第一实施例相同标号标注相同元件。为容易比较第一实施例与其他实施例之间的差异,下文将突显第一实施例与其他实施例的差异处,且不再对重复部分作赘述。
请参考图5,其所示为本发明第二实施例的电子装置的剖视示意图。于本实施例的电子装置300中,电子装置300可例如为显示设备,且发光单元304可作为显示单元,例如像素或子像素,但不限于此。于本实施例中,发光单元304可形成多个像素PX,各像素PX包括至少三个发光单元304。在一些实施例中,电子装置300可例如为感测装置(sensing device)、或天线。相较于图1与图3所示的实施例,本实施例的电子装置300可包括自发光面板。在本实施例中,发光单元304可包括多个第一发光单元304a、多个第二发光单元304b与多个第三发光单元304c,其中各第一发光单元304a、各第二发光单元304b与各第三发光单元304c分别用以产生能混和出白光的三种不同颜色光,以分别作为不同颜色的子像素。举例来说,第一主动元件106a提供到第一发光单元304a的电流可位于范围R2中,第二主动元件106b提供到第二发光单元304b的电流与第三主动元件106c提供到第三发光单元304c的电流可位于范围R1中,使各发光单元304的发光效率可位于70%到100%的范围中,藉此可降低发光单元304的功率损耗。
请参考图6,且一并参考图3与图5。图6所示为本发明第二实施例的发光单元的操作电流的时序示意图,其中第一信号S1代表提供到现有显示设备中作为子像素的发光单元的操作电流,第二信号S2代表提供到第二实施例的电子装置300中作为子像素的发光单元304的操作电流。值得说明的是,当发光单元304应用为子像素时,发光单元304在显示设备显示的过程中并非持续恒亮,而是需呈现出子像素的灰阶亮度。在现有作为子像素的发光单元中,为了呈现出灰阶的不同,提供到发光单元的操作电流会小于对应70%的发光效率的电流值IO(例如对应图3所示的箭头A2的起点O2的电流值),且如图6所示的第一信号S1,在单一画面时间FT中,发光单元会持续被提供此操作电流值IO,如此造成发光单元的发光效率不佳。然而,在本实施例中,提供到发光单元304的操作电流会提高到大于或等于对应70%的发光效率的电流值IP(如图3所示的箭头A2的方向),藉此可提升发光单元304的发光效率。举例来说,本实施例各发光单元304的操作电流可位于曲线C1的峰值PK1的左侧(或曲线C2的峰值PK2的左侧)且对应发光效率为70%到100%的范围中。但在另外一个实施例中,为了呈现出较高的灰阶,例如在N/2(128)灰阶以上或是在N(255)灰阶,第一发光单元304a的操作电流可位于曲线C2的峰值PK2右侧(大于或等于第四电流值I4),而第二发光单元304b或第三发光单元304c的操作电流可位于曲线C1的峰值PK1右侧(大于或等于第三电流值I3)。另外,考虑到第一发光单元304a、第二发光单元304b、与第三发光单元304c的各别发光效率以及白平衡,第一发光单元304a、第二发光单元304b、与第三发光单元304c中的何者在呈现N/2(128)灰阶以上或是在N(255)灰阶时的操作电流位于曲线C1、C2的峰值PK1、PK2右侧并不予以限定。又另外一个实施例中,为了呈现出较低的灰阶,例如小于N/2,如50灰阶以下或是在10灰阶、或1灰阶,第一发光单元304a的操作电流可位于曲线C2的峰值PK2左侧(小于或等于第四电流值I4),而第二发光单元304b或第三发光单元304c的操作电流可位于曲线C1的峰值PK1左侧(小于或等于第三电流值I3)。又另外一个实施例中,为了呈现出较高的灰阶,例如N/2(128)灰阶以上或是在N(255)灰阶,发光单元304的操作电流位于曲线C1、C2的峰值PK1、PK2右侧,且为了呈现出较低的灰阶,例如50灰阶以下或是在10灰阶,发光单元304的操作电流位于曲线C1、C2的峰值PK1、PK2左侧。也就是说,此实施例可以依据发光单元304所需呈现的灰阶而将操作电流设定为位于曲线C1、C2的峰值PK1、PK2左侧或是峰值PK1、PK2右侧。又另外一个实施例中,部分的发光单元304在显示设备呈现不同灰阶时的操作电流皆位于曲线C1、C2的峰值PK1、PK2左侧,而另一部分的发光单元304在显示设备呈现不同灰阶时的操作电流因应不同的灰阶而可位于曲线C1、C2的峰值PK1、PK2左侧或右侧。为了避免提高电流值所造成的亮度过高的情况,本实施例的主动元件106提供到发光单元304的电流在单一画面时间FT中并非固定值,而是包括彼此分隔开的多个脉冲电流P,如图6的第二信号S2所示,且各脉冲电流P的电流值IP位于发光单元304对应70%到100%的发光效率的操作电流范围中(如图3所示曲线C1的范围R1或曲线C2的范围R2中)。通过调整各脉冲电流P的时间宽度W,可使发光单元304在单一画面时间FT中所呈现的亮度符合所需的亮度。举例来说,若欲显示亮度较高的灰阶值时,可增加各脉冲电流P的时间宽度W,若欲显示亮度较低的灰阶值时,可缩短各脉冲电流P的时间宽度W。于一些实施例中,不同脉冲电流P的时间宽度W可不相同。须知悉的是,前述有关操作电流的叙述,同样可以应用至发光单元304仅包括一种发光二极管的实施例,例如蓝色发光二极管,蓝色发光二极管所产生的蓝色光可搭配不同的光转换粒子以转换出绿色光或红色光,或是包括二种发光二极管的实施例,例如蓝色发光二极管与绿色发光二极管,蓝色发光二极管所产生的蓝色光再搭配光转换粒子以转换出红色光。
以发光单元包括一种发光二极管的实施例为例进一步说明。图7所示为本发明第二实施例的第一变化实施例的电子装置的剖视示意图。如图7所示,本变化实施例所提供的电子装置350与图5所示的电子装置300的差异在于电子装置350的发光单元354包括产生同一种第一颜色光的发光二极管,且电子装置350还可包括光转换层384,设置于对应的发光单元354上,用以将发光单元354所产生的光线转换为所需颜色的光线。本实施例以发光单元354所产生的颜色可作为一子像素SPX的颜色且像素PX可包括三个发光单元354为例,但本发明不限于此。在本实施例中,光转换层384可包括第一光转换层384a与第二光转换层384b,且第一光转换层384a设置在一发光单元354上,用以将第一颜色光转换为第二颜色光,第二光转换层384b设置在另一发光单元354上,用以将第一颜色光转换为第三颜色光,且另一发光单元354上没有设置光转换层384,因此第一颜色光、第二颜色光与第三颜色光可混合出白光。
具体来说,电子装置350可包括像素定义层386,设置于基板102上,且像素定义层386具有多个开口386a,而每个开口386a中可设置至少一个发光单元354。另外,本实施例的电子装置350还可包括另一基板388、遮光层390、分隔墙392以及光散射层394。基板388与基板102彼此相对设置,遮光层390形成于基板388上,且具有多个开口390a。本实施例的遮光层390的开口390a可分别对应像素定义层386的开口386a,使得从每个开口390a朝基板388射出的光线可作为子像素SPX的光线。遮光层390可包括遮光材料,例如黑色光阻材料。分隔墙392可设置于遮光层390上,且也可具有多个开口392a,每个开口392a分别对应遮光层390的一个开口390a。分隔墙392可包括光阻挡材料,例如白色光阻材料,用以反射光线。第一光转换层384a、第二光转换层384b以及光散射层394可分别形成设置于对应的一个开口394a中。在本实施例中,电子装置350还可选择性包括用以吸收不同颜色光线的第一彩色滤光层396a、第二彩色滤光层396b以及第三彩色滤光层396c,且第一彩色滤光层396a、第二彩色滤光层396b以及第三彩色滤光层396c分别设置于对应的一个开口390a中,并分别位于第一光转换层384a、第二光转换层384b以及光散射层394上。举例来说,第一彩色滤光层396a、第二彩色滤光层396b以及第三彩色滤光层396c可分别为红色、绿色与蓝色彩色滤光层,但不限于此。在其他实施例中,第一彩色滤光层396a以及第二彩色滤光层396b可分别为黄色彩色滤光层。在其他实施例中,第一彩色滤光层396a以及第二彩色滤光层396b可置换为布拉格反射层。在其他实施例中,电子装置350还可选择性包括低折射率层位于第一彩色滤光层396a以及第一光转换层384a之间或是位于第二彩色滤光层396b以及第二光转换层384b之间,其中,低折射率层的折射率小于彩色滤光层396a、396b或小于光转换层384a、384b。在基板102与基板388上各自形成对应的元件之后,可通过黏着层398将基板102与基板388黏合,其中发光单元354、像素定义层386、遮光层390、分隔墙392、光散射层394与彩色滤光层设置于基板102与基板388之间。黏着层398可例如包括光学透明胶(OCA)或光学透明树脂(OCR),但不限于此。本实施例的电子装置350为所谓的两基板类型的自发光显示设备,但不限于此。
在一些实施例中,电子装置350也可为单基板类型的自发光显示设备,换言之,遮光层390与分隔墙392可形成在像素定义层386上,光转换层384与光散射层394可分别形成在对应的发光单元354上,且彩色滤光层形成在光转换层384与光散射层394上。并且,可在遮光层390与彩色滤光层上进一步覆盖封胶层。在一些实施例中,发光单元354所产生的颜色也可不同于子像素SPX的颜色,例如可为紫外光或蓝光,因此光散射层394可置换为能够产生与子像素SPX颜色相同的颜色光的光转换层。
图8所示为本发明第二实施例的第二变化实施例的电子装置的剖视示意图。如图8所示,本变化实施例所提供的电子装置400与图5所示的电子装置300的差异在于发光单元404直接设置于驱动电路基板102上。于一些实施例中,电子装置400还可包括一第一保护层426,覆盖发光单元404以及驱动电路基板102,用以保护发光单元404。由于第一保护层426直接覆盖于发光单元404的出光面上,因此为降低第一保护层426对发光单元404的出光亮度的影响,第一保护层426在1微米的厚度下具有大于或等于63%的穿透率,或者第一保护层426在1微米的厚度下具有小于或等于0.2的光学密度(optical density,OD)。举例来说,第一保护层426位于发光单元404中的一个的正上方的厚度T1可为1微米到5微米。
于一些实施例中,第一保护层426除了具有保护发光单元404的功能之外还可具有降低发光单元404的可视度的功能。举例来说,第一保护层426在1微米的厚度下还可具有小于或等于98%的穿透率。于一些实施例中,第一保护层426可例如包括光阻材料、硅胶或环氧树脂胶。于一些实施例中,第一保护层426还可包括光吸收材料、光散射粒子或上述的组合。光吸收材料可例如包括二氧化钛(TiO2)、二氧化锆(ZrO2)、氧化铝(Al2O3)、氧化铟(In2O3)、氧化锌(ZnO)、二氧化锡(SnO2)、三氧化二锑(Sb2O3)、二氧化硅(SiO2)或上述的组合,但不限于此。光散射粒子可例如包括金、银、铜、铂、铁、钴、镍、锰或上述的组合,但不限于此。
于一些实施例中,为了提升同一像素PX中的两相邻发光单元404的混光或降低相邻像素PX的混光,相邻两个像素PX之间的间距T3可大于同一像素PX中的相邻两个发光单元404之间的间距T2。于一些实施例中,第一保护层426位于发光单元404中的一个的正上方的厚度T1可小于或等于同一像素PX中的相邻两个发光单元404之间的间距T2。在一些实施例中,相邻两个像素PX之间的间距T3可大于第一保护层426位于发光单元404中的一个的正上方的厚度T1。举例来说,间距T2可为约3微米到20微米,间距T3可大于约20微米。
于本实施例中,第一保护层426还可覆盖部分驱动电路基板102。为遮蔽驱动电路基板102中的线路(例如金属线路),位于未设置有发光单元404的驱动电路基板102的部分的正上方的第一保护层426可具有一厚度T4。举例来说,当发光单元404为微型发光二极管时,厚度T4可为约4微米到15微米。当发光单元404为小型发光二极管时,厚度T4可为约50微米到150微米。在一些实施例中,厚度T4可大于厚度T1。于一些实施例中,电子装置400还可包括一第二保护层(如图10所示的第二保护层),覆盖未设置有发光单元404的驱动电路基板102上,且第二保护层的穿透率可不同于第一保护层426的穿透率。
图9所示为本发明第二实施例的第三变化实施例的电子装置的剖视示意图。如图9所示,本变化实施例的电子装置500与图8所示的电子装置400的差异在于第一保护层526包括彼此分隔开的多个保护区块528,且各保护区块528分别覆盖对应一个像素PX中的所有发光单元404。由于覆盖不同像素PX的保护区块528彼此分隔开,当电子装置500被弯折时,彼此分隔开的保护区块528较不易产生裂痕。于一些实施例中,电子装置500还可包括一第二保护层(如图10所示的第二保护层),覆盖未设置有发光单元404的驱动电路基板102上,且第二保护层的穿透率可不同于第一保护层526的穿透率。
图10所示为本发明第二实施例的第四变化实施例的电子装置的剖视示意图。如图10所示,本变化实施例的电子装置600与图8所示的电子装置400的差异第一保护层626包括彼此分隔开的多个保护区块628,且各保护区块628分别覆盖发光单元404中的一个。由于覆盖不同发光单元404的保护区块628彼此分隔开,当电子装置600被弯折时,彼此分隔开的保护区块628较不易产生裂痕。于一些实施例中,电子装置600还可包括一第二保护层630,设置于未设置有发光单元404的驱动电路基板102上,且第二保护层630的穿透率不同于第一保护层626的穿透率,使得第二保护层630的设置可针对驱动电路基板102中的线路(例如金属线路)的可视度作调整,进而降低驱动电路基板102的可视度。
图11所示为本发明第二实施例的第五变化实施例的电子装置的剖视示意图。如图11所示,本变化实施例所提供的电子装置700与图8所示的电子装置400的差异在于还可包括多个第三保护层732a、732b、732c,分别覆盖对应的发光单元404a、404b、404c。第三保护层732a、732b、732c的穿透率可对应于所覆盖的发光单元404a、404b、404c,以允许对应的发光单元404a、404b、404c所产生的光线通过。举例来说,发光单元404a、404b、404c可分别用以产生不同颜色的光线,其中第三保护层732a覆盖发光单元404a,并允许发光单元404a的光线穿透,第三保护层732b覆盖发光单元404b,并允许发光单元404b的光线穿透,且第三保护层732c覆盖发光单元404c,并允许发光单元404c的光线穿透。在一些实施例中,第三保护层732a、732b、732c可为彩色滤光片,并通过显影(lithography)制程或注入(inject)制程所形成。在此情况下,第三保护层732a、732b、732c可具有平坦的上表面。在一些实施例中,第一保护层726可不覆盖第三保护层732a、732b、732c以及发光单元404,也就是第一保护层726的上表面可与第三保护层732a、732b、732c的上表面位于同一平面或低于第三保护层732a、732b、732c的上表面。第一保护层726的材料可例如相同于图8所示的第一保护层,因此在此不多赘述,但也不以此为限。在一些实施例中,第一保护层726也可覆盖所有发光单元404,如图8所示,或包括如图9所示的保护区块或如图10所示的保护区块。在一些实施例中,第三保护层732a、732b、732c也可包括颜料与黏胶,并通过将颜料与黏胶混合以及点胶(dispense)制程所形成。在此情况下,第三保护层732a、732b、732c可具有凸面的上表面。
综上所述,在本发明的电子装置中,通过使发光单元的操作电流位在对应发光效率为70%到100%的范围中,可降低发光单元的功率损耗,并藉由主动元件控制发光单元的发光与否,以提升电子装置显示时的对比度。
以上所述仅为本发明的实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (20)
1.一种电子装置,其特征在于,包括:
一驱动电路基板,包括多个主动元件;以及
多个发光单元,设置于所述驱动电路基板上,其中各所述发光单元分别电连接相应的所述主动元件;
其中所述主动元件中的一个提供一第一电流到相应的所述发光单元,使所述发光单元的发光效率位于70%到100%的范围中。
2.如权利要求1所述的电子装置,其特征在于,所述主动元件中的一个包括薄膜晶体管。
3.如权利要求1所述的电子装置,其特征在于,所述发光单元在对角线为1英寸的区域中的数量大于或等于10。
4.如权利要求1所述的电子装置,其特征在于,所述第一电流包括彼此分隔开的多个脉冲电流,其中各所述主动元件提供各所述脉冲电流的峰值到相应的所述发光单元,使所述发光单元的发光效率位于70%到100%的范围中。
5.如权利要求1所述的电子装置,其特征在于,还包括一第一保护层,覆盖所述发光单元。
6.如权利要求5所述的电子装置,其特征在于,所述第一保护层在1微米的厚度下具有大于或等于63%的穿透率。
7.如权利要求5所述的电子装置,其特征在于,所述第一保护层包括彼此分隔开的多个保护区块,且各所述保护区块分别覆盖所述发光单元中的一个。
8.如权利要求5所述的电子装置,其特征在于,还包括一第二保护层,设置于未设置有所述发光单元的所述驱动电路基板上,且所述第二保护层的穿透率不同于所述第一保护层的穿透率。
9.如权利要求1所述的电子装置,其特征在于,所述发光单元形成多个像素,各所述像素包括至少三个所述发光单元。
10.如权利要求9所述的电子装置,其特征在于,还包括一第一保护层,覆盖所述发光单元,所述第一保护层位于所述发光单元中的一个的正上方的厚度小于或等于同一所述像素中的相邻两个所述发光单元之间的间距。
11.如权利要求9所述的电子装置,其特征在于,还包括一第一保护层,覆盖所述发光单元,相邻两个所述像素之间的间距大于所述第一保护层位于所述发光单元中的一个的正上方的厚度以及大于同一所述像素中的相邻两个所述发光单元之间的间距。
12.如权利要求9所述的电子装置,其特征在于,还包括一第一保护层,所述第一保护层包括彼此分隔开的多个保护区块,且各所述保护区块分别覆盖所述像素中的一个的所述发光单元。
13.如权利要求1所述的电子装置,其特征在于,所述主动元件的另一个提供一第二电流到相应的所述发光单元,使所述发光单元中的发光效率位于70%到100%的范围中,且所述第一电流不同于所述第二电流。
14.如权利要求1所述的电子装置,其特征在于,所述电子装置包括多个封装体,且所述发光单元中的至少一个设置于对应的所述封装体中的一个中。
15.如权利要求14所述的电子装置,其特征在于,所述发光单元中的三个设置于对应的一个所述封装体中,且所述三个发光单元分别用以产生能混和出白光的三种不同颜色光,且各所述发光单元分别电连接对应的一个所述主动元件。
16.如权利要求1所述的电子装置,其特征在于,还包括一非自发光面板,设置于所述发光单元上。
17.一种电子装置,其特征在于,所述电子装置用于显示0到N的灰阶,且所述电子装置包括:
一驱动电路基板,包括一主动元件;以及
一发光单元,设置于所述驱动电路基板上,其中所述发光单元在提供一第一电流时具有一最高发光效率;
其中当所述电子装置显示的灰阶为N时,所述主动元件提供一第二电流到所述发光单元,且所述第二电流大于或等于所述第一电流。
18.如权利要求17所述的电子装置,其特征在于,当所述电子装置显示的灰阶为N/2时,所述主动元件提供一第三电流到所述发光单元,且所述第三电流大于或等于所述第一电流。
19.如权利要求17所述的电子装置,其特征在于,当所述电子装置显示的灰阶为1时,所述主动元件提供一第四电流到所述发光单元,且所述第四电流小于或等于所述第一电流。
20.如权利要求17所述的电子装置,其特征在于,所述发光单元在提供所述第二电流时具有一发光效率,位于70%到100%的范围中。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202410180943.0A CN118039664A (zh) | 2018-08-10 | 2019-08-01 | 电子装置 |
US16/533,718 US20200050058A1 (en) | 2018-08-10 | 2019-08-06 | Electronic device |
EP23184028.1A EP4243008A3 (en) | 2018-08-10 | 2019-08-07 | Electronic device |
EP19190517.3A EP3608898A3 (en) | 2018-08-10 | 2019-08-07 | Electronic device |
KR1020190097219A KR20200018335A (ko) | 2018-08-10 | 2019-08-09 | 전자 장치 |
US17/477,500 US11631657B2 (en) | 2018-08-10 | 2021-09-16 | Electronic device with five surfaces light emitting units and passivation layer covering light emitting units and substrate |
US18/122,714 US20230223385A1 (en) | 2018-08-10 | 2023-03-17 | Electronic device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862717000P | 2018-08-10 | 2018-08-10 | |
US62/717,000 | 2018-08-10 | ||
CN201910044000 | 2019-01-17 | ||
CN2019100440004 | 2019-01-17 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202410180943.0A Division CN118039664A (zh) | 2018-08-10 | 2019-08-01 | 电子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110828501A true CN110828501A (zh) | 2020-02-21 |
CN110828501B CN110828501B (zh) | 2024-03-12 |
Family
ID=69406229
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202410180943.0A Pending CN118039664A (zh) | 2018-08-10 | 2019-08-01 | 电子装置 |
CN201910708175.0A Active CN110828501B (zh) | 2018-08-10 | 2019-08-01 | 电子装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202410180943.0A Pending CN118039664A (zh) | 2018-08-10 | 2019-08-01 | 电子装置 |
Country Status (4)
Country | Link |
---|---|
US (4) | US11244930B2 (zh) |
EP (1) | EP4243008A3 (zh) |
KR (1) | KR20200018335A (zh) |
CN (2) | CN118039664A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI751862B (zh) * | 2020-12-22 | 2022-01-01 | 大陸商業成科技(成都)有限公司 | 微發光二極體顯示面板及其製作方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220140217A1 (en) * | 2020-10-30 | 2022-05-05 | Raysolve Optoelectronics (Suzhou) Company Limited | Light emitting diode structure and method for manufacturing the same |
US11687187B2 (en) | 2021-04-09 | 2023-06-27 | Pixart Imaging Inc. | Lighting touchpad |
US20220413654A1 (en) * | 2021-04-09 | 2022-12-29 | Pixart Imaging Inc. | Capacitive touchpad |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1391202A (zh) * | 2001-06-07 | 2003-01-15 | 精工爱普生株式会社 | El显示器、el照明装置及其驱动方法、以及液晶装置 |
CN1437768A (zh) * | 2000-06-23 | 2003-08-20 | 剑桥显示技术有限公司 | 发光器件 |
US20050104529A1 (en) * | 2003-11-14 | 2005-05-19 | Sung-Chon Park | Power supply and light emitting display device using the same |
JP2006244892A (ja) * | 2005-03-04 | 2006-09-14 | Chunghwa Picture Tubes Ltd | アクティブマトリックス有機el素子アレイ |
CN102696282A (zh) * | 2009-11-06 | 2012-09-26 | 尼欧弗科系统有限公司 | 照明供电系统和方法以及控制系统 |
CN104952372A (zh) * | 2014-03-28 | 2015-09-30 | 聚积科技股份有限公司 | 显示器结构 |
JP2015215940A (ja) * | 2012-08-17 | 2015-12-03 | 出光興産株式会社 | 発光装置、電子機器および発光装置の製造方法 |
CN105702207A (zh) * | 2016-04-15 | 2016-06-22 | 京东方科技集团股份有限公司 | 防止关机时显示面板的画面残影的驱动方法及显示装置 |
US20170053602A1 (en) * | 2015-08-20 | 2017-02-23 | Apple Inc. | Self-Emissive Display with Switchable Retarder for High Contrast |
CN108028264A (zh) * | 2015-10-30 | 2018-05-11 | 乐金显示有限公司 | 电致发光显示设备 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9903251D0 (en) | 1999-02-12 | 1999-04-07 | Cambridge Display Tech Ltd | Opto-electric devices |
TW483287B (en) | 1999-06-21 | 2002-04-11 | Semiconductor Energy Lab | EL display device, driving method thereof, and electronic equipment provided with the EL display device |
US6809710B2 (en) | 2000-01-21 | 2004-10-26 | Emagin Corporation | Gray scale pixel driver for electronic display and method of operation therefor |
TWI260944B (en) * | 2003-01-29 | 2006-08-21 | Au Optronics Corp | Display device with passivation structure |
US7202504B2 (en) * | 2004-05-20 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
US8803417B2 (en) * | 2009-12-01 | 2014-08-12 | Ignis Innovation Inc. | High resolution pixel architecture |
EP2365734A3 (de) * | 2010-03-11 | 2012-06-27 | Christina Obenaus | Verfahren zum Betrieb einer LED-Anordnung |
EP2556723B1 (en) | 2010-04-09 | 2018-06-06 | eldoLAB Holding B.V. | Driver system for driving a plurality of leds |
US9259904B2 (en) * | 2011-10-20 | 2016-02-16 | Apple Inc. | Opaque thin film passivation |
US9356070B2 (en) | 2012-08-15 | 2016-05-31 | Epistar Corporation | Light-emitting device |
US9178123B2 (en) * | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
CN103293776A (zh) * | 2013-05-07 | 2013-09-11 | 北京京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
KR102059371B1 (ko) * | 2013-05-24 | 2019-12-27 | 엘지디스플레이 주식회사 | 액정 디스플레이 장치와 이의 제조방법 |
US10278243B2 (en) | 2014-03-06 | 2019-04-30 | Seoul Semiconductor Co., Ltd. | Backlight module with MJT LED and backlight unit including the same |
KR20160049382A (ko) | 2014-10-27 | 2016-05-09 | 삼성디스플레이 주식회사 | 레이저 박리 장치 및 표시 장치의 제조 방법 |
JP6501581B2 (ja) | 2015-03-26 | 2019-04-17 | キヤノン株式会社 | 光源装置、画像表示装置、及び、光源装置の制御方法 |
EP3316244B1 (en) * | 2015-06-26 | 2020-09-23 | Seoul Semiconductor Co., Ltd. | Backlight unit using multi-cell light emitting diode |
KR20170022047A (ko) * | 2015-08-19 | 2017-03-02 | 삼성전자주식회사 | 자체발광 디스플레이 패널 및 이를 가지는 디스플레이 장치 |
CN105303985B (zh) | 2015-11-24 | 2019-02-26 | 深圳市华星光电技术有限公司 | 石墨烯显示器及其显示驱动方法 |
KR102506957B1 (ko) * | 2016-02-02 | 2023-03-08 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
KR102455084B1 (ko) | 2016-02-23 | 2022-10-14 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 및 이를 갖는 표시장치 |
KR102686185B1 (ko) * | 2016-11-23 | 2024-07-19 | 삼성전자주식회사 | 디스플레이 장치, 캘리브레이션 장치 및 그 제어 방법 |
US20200013932A1 (en) * | 2017-01-24 | 2020-01-09 | Lg Innotek Co., Ltd. | Semiconductor device package |
KR102060471B1 (ko) * | 2017-02-01 | 2019-12-30 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조 방법 |
CN106953031B (zh) * | 2017-05-16 | 2018-11-09 | 武汉华星光电技术有限公司 | 一种柔性有机发光二极管显示器及其制作方法 |
KR102473424B1 (ko) * | 2018-01-03 | 2022-12-02 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 |
DE102018101090A1 (de) * | 2018-01-18 | 2019-07-18 | Osram Opto Semiconductors Gmbh | Anzeigeelement, Anzeigevorrichtung und Verfahren zur Herstellung einer Kontaktstruktur bei einer Vielzahl von Anzeigeelementen |
US11699687B2 (en) | 2018-04-25 | 2023-07-11 | Intel Corporation | Micro light-emitting diode display driver architecture and pixel structure |
-
2019
- 2019-07-11 US US16/508,311 patent/US11244930B2/en active Active
- 2019-08-01 CN CN202410180943.0A patent/CN118039664A/zh active Pending
- 2019-08-01 CN CN201910708175.0A patent/CN110828501B/zh active Active
- 2019-08-07 EP EP23184028.1A patent/EP4243008A3/en active Pending
- 2019-08-09 KR KR1020190097219A patent/KR20200018335A/ko not_active Application Discontinuation
-
2021
- 2021-09-16 US US17/477,500 patent/US11631657B2/en active Active
-
2022
- 2022-01-05 US US17/568,723 patent/US11798922B2/en active Active
-
2023
- 2023-03-17 US US18/122,714 patent/US20230223385A1/en active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1437768A (zh) * | 2000-06-23 | 2003-08-20 | 剑桥显示技术有限公司 | 发光器件 |
CN1391202A (zh) * | 2001-06-07 | 2003-01-15 | 精工爱普生株式会社 | El显示器、el照明装置及其驱动方法、以及液晶装置 |
US20050104529A1 (en) * | 2003-11-14 | 2005-05-19 | Sung-Chon Park | Power supply and light emitting display device using the same |
JP2006244892A (ja) * | 2005-03-04 | 2006-09-14 | Chunghwa Picture Tubes Ltd | アクティブマトリックス有機el素子アレイ |
CN102696282A (zh) * | 2009-11-06 | 2012-09-26 | 尼欧弗科系统有限公司 | 照明供电系统和方法以及控制系统 |
JP2015215940A (ja) * | 2012-08-17 | 2015-12-03 | 出光興産株式会社 | 発光装置、電子機器および発光装置の製造方法 |
CN104952372A (zh) * | 2014-03-28 | 2015-09-30 | 聚积科技股份有限公司 | 显示器结构 |
US20170053602A1 (en) * | 2015-08-20 | 2017-02-23 | Apple Inc. | Self-Emissive Display with Switchable Retarder for High Contrast |
CN108028264A (zh) * | 2015-10-30 | 2018-05-11 | 乐金显示有限公司 | 电致发光显示设备 |
CN105702207A (zh) * | 2016-04-15 | 2016-06-22 | 京东方科技集团股份有限公司 | 防止关机时显示面板的画面残影的驱动方法及显示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI751862B (zh) * | 2020-12-22 | 2022-01-01 | 大陸商業成科技(成都)有限公司 | 微發光二極體顯示面板及其製作方法 |
Also Published As
Publication number | Publication date |
---|---|
EP4243008A2 (en) | 2023-09-13 |
KR20200018335A (ko) | 2020-02-19 |
CN118039664A (zh) | 2024-05-14 |
US11244930B2 (en) | 2022-02-08 |
US20200051958A1 (en) | 2020-02-13 |
CN110828501B (zh) | 2024-03-12 |
EP4243008A3 (en) | 2023-09-27 |
US11631657B2 (en) | 2023-04-18 |
US20220130806A1 (en) | 2022-04-28 |
US20220005406A1 (en) | 2022-01-06 |
US11798922B2 (en) | 2023-10-24 |
US20230223385A1 (en) | 2023-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110828501B (zh) | 电子装置 | |
KR102651097B1 (ko) | 발광 다이오드 디스플레이 장치 | |
CN108345142B (zh) | 显示设备 | |
US20240040889A1 (en) | Electronic device | |
KR20180079081A (ko) | 액정 표시 장치 | |
EP3579273B1 (en) | Light-emitting device and surface-emitting light source | |
CN108664165B (zh) | 显示面板及应用该显示面板的电子装置 | |
EP3608898A2 (en) | Electronic device | |
KR20190085195A (ko) | 백라이트 유닛 및 이를 포함하는 표시 장치 | |
CN112180635B (zh) | 颜色转换片、背光单元和显示装置 | |
US11493681B2 (en) | Backlight unit and display device comprising the same | |
CN113728431A (zh) | 发光二极管模块 | |
KR20110127387A (ko) | 백라이트 유닛 및 이를 포함하는 디스플레이 장치 | |
US11003025B2 (en) | Backlight unit and display device including the same | |
TW202119383A (zh) | 顯示系統 | |
KR102217631B1 (ko) | 발광 다이오드 칩, 발광 다이오드 패키지 및 표시장치 | |
KR20240118387A (ko) | 발광 다이오드 표시 장치 | |
KR20230126190A (ko) | 디스플레이 장치 및 그 제조 방법 | |
CN114628429A (zh) | 显示装置 | |
KR20210071386A (ko) | 발광 다이오드를 이용한 표시 장치 | |
KR20170086299A (ko) | 발광소자 패키지, 백라이트 유닛 및 조명장치 | |
KR20150140028A (ko) | 발광소자 모듈 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |