CN110793628A - Irradiation intensity distribution measuring method based on photodiode array - Google Patents
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Abstract
A radiation intensity distribution measuring method based on a photodiode array is characterized in that the radiation intensity measurement is converted into the measurement of the photo-generated current of the photodiode by utilizing the direct proportion relation between the photo-generated current of the photodiode and the radiation intensity, and the photodiode array is arranged on a plane needing the radiation intensity measurement, so that the distribution of the radiation intensity is reflected by the photo-generated current distribution of the photodiode array. The invention can measure the distribution of the irradiation intensity, the effective light receiving area of the photodiode is smaller, the step length between adjacent irradiation intensity measuring points is shorter, and the measuring precision is ensured. And moreover, the area occupied by the frame and the positive and negative terminals is made up by adopting a mode of inserting and arranging two rows of photodiodes, so that the irradiation intensity distribution in one direction is completely covered. In addition, the non-uniformity of the irradiation intensity distribution can be quantitatively evaluated, and the influence of the irradiation intensity non-uniformity on the overall performance parameters of the concentrating photovoltaic photo-thermal system is further explored.
Description
Technical Field
The invention belongs to the field of solar concentrating photovoltaic photo-thermal, and relates to a method for measuring radiation intensity distribution based on a photodiode array.
Background
In the field of solar concentrating photovoltaic photo-thermal, the irradiation intensity distribution on the surface of a photovoltaic photo-thermal component is always uneven due to the design principle and the light concentrating characteristic of a light concentrator or objective factors such as an incomplete alignment tracking strategy. Such non-uniform distribution of the irradiation intensity directly leads to non-uniform current distribution and temperature distribution of the photovoltaic cell. The local excessive current increases the ohmic loss of the whole photovoltaic cell, so that the open-circuit voltage and the filling factor of the photovoltaic cell are reduced, and finally the photoelectric conversion efficiency of the photovoltaic cell is reduced. And locally excessive cell temperature can lead to hot spots and thermal stress concentrations on the surface of the photovoltaic cell, thereby causing failure of the photovoltaic cell. Therefore, the irradiation intensity distribution on the surface of the photovoltaic cell is ascertained in advance and is quantitatively characterized, and the method is necessary for ensuring the safe and efficient output of electric energy of the photovoltaic cell.
Most of the existing irradiation intensity measurement methods are directed to single-point measurement, and the measurement of irradiation intensity distribution is less. And a few of the methods involved in the measurement of the intensity distribution of radiation have their own drawbacks. For example, the photovoltaic array irradiance measurement identification method proposed by the relative army and Zhang Xiao Peak of Zhejiang industry university has the advantages of relatively discrete distribution of the light sensors for measuring the irradiation intensity and relatively low measurement accuracy. However, the automatic scanning irradiance measurement system and method proposed by the university of harbourne's industry, such as liuxiang and waning flood, requires a detection mechanism to be moved in space to cover the irradiation intensity distribution in the whole measurement direction, and the method is not only complex in operation, but also has larger measurement errors in the case of larger changes in actual weather conditions. Therefore, it is imperative to develop a measurement method capable of directly obtaining the irradiation intensity distribution.
Disclosure of Invention
To overcome the problems in the prior art, the present invention provides a method for measuring the distribution of irradiation intensity based on a photodiode array.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
an irradiation intensity distribution measuring method based on a photodiode array comprises the following steps:
1) fixing each photodiode in the photodiode array on the circuit board, and connecting each photodiode with a data acquisition and recording system through a signal line;
2) placing a photodiode array on a light-gathering surface of a light-gathering photovoltaic photo-thermal system, and collecting and recording photo-generated current of the photodiode through a data collecting and recording system;
3) calculating the irradiation intensity received by each photodiode on the light-gathering surface by using the photo-generated current measured under the standard simulation light source and the photo-generated current of the photodiode obtained in the step 2); and then calculating the irradiation non-uniformity according to the irradiation intensity of the photodiode array.
The further improvement of the invention is that in the step 1), the photodiode array comprises two rows of photodiodes, the two rows of photodiodes are arranged in a staggered and empty arrangement mode, and the positive and negative terminals of each diode are connected with a data acquisition system.
The invention is further improved by assuming that the number of photodiodes in the first row is m and the number of photodiodes in the second row is n, whenIn the case of an even number, the number of the first,
when in use
In the case of an odd number of the groups,
wherein, w is the width of a plane needing to be subjected to irradiation intensity distribution measurement, and l is the side length of the diode.
A further improvement of the invention is that in step 1), the photodiode has a model of SFH 2400.
A further improvement of the present invention is that, in step 1), each photodiode is fixed on the circuit board by means of soldering.
A further improvement of the invention consists in calibrating each photodiode before carrying out step 2).
The further improvement of the invention is that in the step 3), the specific process of calculating the magnitude of the irradiation intensity received by each photodiode on the light-gathering surface is as follows: suppose that the two rows of photodiodes receive irradiation intensities of G11，G12，……，G1m，G21，G22，……，G2nThen, there are:
in the above formula, GijRepresenting the irradiation intensity received by any one photodiode in the photodiode array, wherein i represents a row of the array and takes a value of 1 or 2, and j represents the first photodiode in a certain row; when i is 1, j is 1,2, … …, m; when i is 2, j is 1,2, … …, n; m is the number of photodiodes in the first row, n is the number of photodiodes in the second row, IijAnd Iij,refRespectively representing the photo-generated current of the photodiode under the condition of light concentration and under the condition of illumination of a standard simulated light source, GrefIs the irradiation intensity of a standard simulated light source.
The further improvement of the invention is that in the step 3), the specific process of calculating the irradiation nonuniformity according to the irradiation intensity of the photodiode array comprises the following steps:
in the above formula, σGFor simulating the irradiation intensity G of the light source with a standardrefThe irradiation non-uniformity after dimensionless,
is the average of the intensity of the radiation received by all the photodiodes in the array.
Compared with the prior art, the invention has the following beneficial effects: the invention adopts the photodiode of the insertion arrangementIn the array measuring method, the irradiation intensity distribution in the width direction of the light-condensing surface of the linear condenser can be completely covered, and the measurement accuracy is ensuredmax-Gmin)/(Gmax+Gmin) Only the difference between the maximum and minimum irradiation intensities is of interest. In contrast, the irradiation nonuniformity calculation method provided by the invention focuses more on the overall standard deviation reflected by the difference between the points, and quantitatively characterizes the irradiation intensity distribution more reasonably.
Compared with the traditional single-point irradiation intensity measurement method, the measurement method provided by the invention can be used for measuring the distribution of the irradiation intensity, the effective light receiving area of the photodiode is smaller, the step length between adjacent irradiation intensity measurement points is shorter, and the measurement precision is ensured. And moreover, the area occupied by the frame and the positive and negative terminals is made up by adopting a mode of inserting and arranging two rows of photodiodes, so that the irradiation intensity distribution in one direction is completely covered. In addition, the non-uniformity of the irradiation intensity distribution can be quantitatively evaluated by combining with the provided calculation method, and the influence of the irradiation intensity non-uniformity on the overall performance parameters of the concentrating photovoltaic photo-thermal system is laid for further exploring.
The invention utilizes the direct proportion relation between the photo-generated current of the photodiode and the irradiation intensity to convert the irradiation intensity measurement into the measurement of the photo-generated current of the photodiode, and arranges the photodiode array on the plane needing the irradiation intensity measurement, thereby reflecting the distribution of the irradiation intensity by the photo-generated current distribution of the photodiode array. The invention can simultaneously measure the irradiation intensity distribution of all parts in one direction by using the thought of 'space compensation time', has high precision, simple and convenient operation and certain advancement.
Furthermore, the photodiode with the model of SFH2400 has a spectral response curve similar to that of a crystalline silicon solar cell, and the effective light receiving area is 1mm x 1mm, so that higher measurement accuracy can be ensured.
Furthermore, the area occupied by the photodiode packaging frame and the positive and negative terminals is compensated by adopting a mode of inserting and arranging the effective light receiving areas of the two rows of photodiodes, so that the purpose of completely covering the photodiodes in the width direction of the photovoltaic array and ensuring the measurement accuracy to the maximum extent is achieved.
Drawings
Fig. 1 is a schematic diagram of the arrangement of the diode array when the number of the photodiodes is odd.
Fig. 2 is a schematic diagram of the arrangement of the diode array when the number of the photodiodes is even.
FIG. 3 is a graph of the irradiance distribution of the Miao gold source CEL-PE300-3A solar simulator.
In the figure, 1 is an effective light receiving area, 2 is a packaging frame, 3 is a negative terminal, 4 is a positive terminal, 5 is a circuit board, 6 is a data acquisition and recording system, 7 is a signal transmission lead, 8 is a computer, and 9 is a data communication network cable.
Detailed Description
The invention is further elucidated with reference to the drawing.
The implementation steps of the invention are as follows:
1) the photodiode model is selected according to the width of the irradiance receiving surface and the number of photodiodes is determined. For a concentrating photovoltaic photothermal system, the width of the irradiance receiving surface generally depends on the width of the photovoltaic array, and in order to ensure the measurement accuracy, the effective light receiving area of the photodiode should be as small as possible. Through investigation and research, a commercially available photodiode with the model of SFH2400 is selected, the spectral response curve of the photodiode is similar to that of a crystalline silicon solar cell, the effective light receiving area is 1mm by 1mm, and high measurement accuracy can be guaranteed. If the width of the plane where the irradiation intensity distribution measurement is required is w (in mm), the total number of photodiodes required is w/1 — w.
2) And determining the arrangement scheme of the photodiode array. Besides an effective light receiving area 1 capable of generating photoelectric effect, a complete photodiode also has a packaging frame 2 with a protection effect, a negative terminal 3 and a positive terminal 4, and the photodiode cannot be arranged in the area occupied by the frame and the positive and negative terminals due to direct and simple parallel arrangement, so that the irradiation intensity data of partial regions are lost. In consideration of the packaging frame and the wiring terminals, gaps are inevitably formed between the effective light receiving areas of adjacent photodiodes, and the photodiodes cannot be arranged in the areas occupied by the photodiode frame and the positive and negative wiring terminals, so that the irradiation intensity data of partial areas are lost, and the areas occupied by the photodiode packaging frame and the positive and negative wiring terminals are compensated by adopting a mode of staggered and empty-inserted arrangement of the effective light receiving areas of two rows of photodiodes, namely the effective light receiving area of the second row of photodiode array just compensates the gaps between the effective light receiving areas of the first row of photodiodes, so that the purpose of completely covering the photodiodes in the width direction of the photovoltaic array and ensuring the measurement accuracy to the maximum extent is achieved. It should be noted that each photodiode in the array is independent and there is no series-parallel relationship, and the positive and negative terminals of each diode are directly connected to the data acquisition system. Assuming that the number of photodiodes in the first row is m and the number of photodiodes in the second row is n, when
In the case of an even number, the number of the first,
since l is 1, m is w/2, as shown in fig. 1, the upper row is a first row of photodiodes, and the lower row is a second row of photodiodes; when in use
In the case of an odd number of the groups,
since l is 1, m is (w +1)/2, and n is (w-1)/2, as shown in fig. 2.
3) And the photodiodes are fixed, and each photodiode is connected with a data acquisition and recording system 6 by adopting a signal transmission lead 7. After the arrangement scheme is determined, the photodiodes are sequentially fixed on a circuit board 5 in a welding mode, meanwhile, a lead is welded to each photodiode, the other end of each lead is connected with a data acquisition and recording system 6 during measurement, specifically, a negative terminal 3 of each photodiode is connected with a negative terminal groove of the data acquisition and recording system 6 through a signal transmission lead 7, and a positive terminal 7 of each photodiode is connected with a positive terminal groove of the data acquisition and recording system 6 through the signal transmission lead 7. The radiation intensity thus measured is converted into a current signal for the photodiode array and is further transmitted, recorded and recorded.
4) And calibrating the photodiode. Before the photodiode array is used for carrying out field measurement on the irradiation intensity distribution of the concentrating photovoltaic photo-thermal system, all the photodiodes need to be calibrated one by one in order to eliminate errors caused by individual differences of the photodiodes. Before calibration, the two rows of diodes are respectively numbered D1,1，D1,2，……，D1,m，D2,1，D2,2，……，D2,nWhere m, n are the number of first and second rows of photodiodes, respectively. Recording at a standard simulated light source (irradiance of 1000W/m)2) Measuring the photo-generated current of each photodiode under irradiation, respectively marked as I1,1_ref，I1,2_ref，……，I1,m_ref，I2,1_ref，I2,2_ref，……，I2,n,_ref。
5) And measuring the photo-generated current of the photodiode in situ. The photodiode array is arranged on the light-gathering surface of the light-gathering photovoltaic photo-thermal system, and after photo-generated current of the photodiode is collected and recorded by the data collecting and recording system, the photodiode array can be moved out of the light-gathering surface, and the measurement is completed. In order to prevent the increase of photo-generated current caused by the temperature rise of the photodiode under the condensed energy flux density, the photodiode array is not placed on the condensed surface for too long time.
6) And quantitatively representing data processing and irradiation nonuniformity. The photo-generated currents of the two rows of photodiodes under the condition of light condensation are respectively represented as I1,1，I1,2，……，I1,m，I2,1，I2,2，……，I2,nAccording to the relationship that the photo-generated current is in direct proportion to the irradiation intensity, the radiation received by each photodiode on the light-gathering surface can be calculated by the photo-generated current measured under a standard simulation light sourceThe intensity is measured. The specific process is as follows: suppose that the two rows of photodiodes receive irradiation intensities of G1,1，G1,2，……，G1,m，G2,1，G2,2，……，G2,nThen, there are:
in the above formula, Gi,jRepresenting the intensity of radiation received by any photodiode in the photodiode array, where i represents the row of the array, values 1 and 2, and j represents the number of photodiodes in a row. When i is 1, j is 1,2, … …, m; when i is 2, j is 1,2, … …, n. I isi,jAnd Ii,j_refRespectively representing the photo-generated current of the photodiode under the condition of light concentration and under the condition of illumination of a standard simulated light source, GrefIs the irradiation intensity (1000W/m) of a standard simulated light source2)。
After the irradiation intensity distribution of the photodiode array is obtained, the data acquisition and recording system 6 is connected with a computer 8 through a data communication network cable 9, and an irradiation intensity distribution curve is drawn on the computer 8 and used for qualitative visual display. Note that, when drawing the irradiation intensity distribution curve, the irradiation intensities received by the respective photodiodes should be arranged in order of actual positions in the width direction. On the other hand, based on the concept of standard deviation in statistics, the irradiation non-uniformity can be quantitatively characterized:
in the above formula, σGTo use GrefThe irradiation non-uniformity after dimensionless,is the average of the intensity of the radiation received by all the photodiodes in the array.
The invention can measure the distribution of the irradiation intensity, the effective light receiving area of the photodiode is smaller, the step length between adjacent irradiation intensity measuring points is shorter, and the measuring precision is ensured. And moreover, the area occupied by the frame and the positive and negative terminals is made up by adopting a mode of inserting and arranging two rows of photodiodes, so that the irradiation intensity distribution in one direction is completely covered. In addition, the non-uniformity of the irradiation intensity distribution can be quantitatively evaluated, and the influence of the irradiation intensity non-uniformity on the overall performance parameters of the concentrating photovoltaic photo-thermal system is further explored.
The method for measuring the irradiation intensity distribution based on the photodiode array according to the present invention is further explained with reference to a specific embodiment.
1) Firstly, determining that an object needing irradiation intensity distribution measurement is a CEL-PE300-3A solar simulator of a Miao gold source. The irradiation intensity distribution in the irradiation range width direction of 20mm × 20mm of this solar simulator was measured. Since the effective light receiving area of the photodiode is 1mm × 1mm, 20 photodiodes are arranged in total to measure the irradiation intensity distribution, wherein the number of the first row and the second row of the photodiodes is the same, and each row is 10, and the arrangement is as shown in fig. 2.
2) After the arrangement scheme shown in fig. 2 is determined, each photodiode is welded on a circuit board to form a photodiode array, and a data acquisition system and a computer are connected. For the convenience of distinguishing, the two rows of diodes are respectively numbered with numbers D1,1，D1,2，……，D1,10，D2,1，D2,2，……，D2,10，
3) The photodiode array is calibrated by adopting an Oriel Solar3A Solar simulator standard light source (irradiation nonuniformity is within 2%) conforming to three standards (IEC 60904-9, JIS C8912 and ASTM E927-05) AAA-level authentication, and the measurement result of the photo-generated current of each photodiode under the irradiation of the standard simulation light source is shown in Table 1.
TABLE 1 photo-generated current distribution (unit: mA) of photodiode array under irradiation of standard analog light source
| I1,1_ref | I1,2_ref | I1,3_ref | I1,4_ref | I1,5_ref | I1,6_ref | I1,7_ref | I1,8_ref | I1,9_ref | I1,10_ref |
| 0.40 | 0.40 | 0.40 | 0.41 | 0.39 | 0.40 | 0.39 | 0.40 | 0.40 | 0.40 |
| I2,1_ref | I2,2_ref | I2,3_ref | I2,4_ref | I2,5_ref | I2,6_ref | I2,7_ref | I2,8_ref | I2,9_ref | I2,10_ref |
| 0.40 | 0.41 | 0.40 | 0.41 | 0.41 | 0.40 | 0.40 | 0.40 | 0.40 | 0.41 |
4) The photodiode array was placed under the irradiation of a middle school gold source CEL-PE300-3A solar simulator to obtain the photo-generated current distribution of the photodiode array, as shown in table 2. According to the relationship that the photo-generated current is in direct proportion to the irradiation intensity, the irradiation intensity distribution of the Miao gold source CEL-PE300-3A solar simulator can be further obtained, as shown in Table 3.
TABLE 2 CEL-PE300-3A solar energy simulation light source irradiation array photo-generated current distribution (unit: mA)
| I1,1 | I1,2 | I1,3 | I1,4 | I1,5 | I1,6 | I1,7 | I1,8 | I1,9 | I1,10 |
| 0.36 | 0.31 | 0.38 | 0.47 | 0.49 | 0.48 | 0.41 | 0.36 | 0.37 | 0.38 |
| I2,1 | I2,2 | I2,3 | I2,4 | I2,5 | I2,6 | I2,7 | I2,8 | I2,9 | I2,10 |
| 0.34 | 0.35 | 0.42 | 0.48 | 0.49 | 0.44 | 0.38 | 0.36 | 0.37 | 0.38 |
TABLE 3 CEL-PE300-3A solar simulation light source irradiation intensity distribution (unit: W/m)2)
| G1,1 | G1,2 | G1,3 | G1,4 | G1,5 | G1,6 | G1,7 | G1,8 | G1,9 | G1,10 |
| 900.0 | 775.0 | 950.0 | 1146.3 | 1256.4 | 1200.0 | 1051.3 | 900.0 | 925.0 | 950.0 |
| G2,1 | G2,2 | G2,3 | G2,4 | G2,5 | G2,6 | G2,7 | G2,8 | G2,9 | G2,10 |
| 850.0 | 853.6 | 1050.0 | 1170.7 | 1195.1 | 1100.0 | 950.0 | 900.0 | 925.0 | 926.8 |
5) Based on the irradiance distribution data in table 3, a CEL-PE300-3A solar simulated light source irradiance distribution curve can be plotted, as shown in fig. 3. It should be noted that, when drawing the irradiation intensity distribution curve, the irradiation intensities received by the respective photodiodes should be arranged in sequence according to the actual positions in the width direction: g1,1，G2,1，G,1,2，G2,2，……，G1,10，G2,10. Meanwhile, according to the formula (2), the irradiation nonuniformity of the solar simulator of the model can be quantitatively calculated to be sigmaG13.4%. It can be seen that there is a gap from the 2% non-uniformity of the standard source. Therefore, the method for measuring the irradiation intensity distribution based on the photodiode array can be used for detecting the irradiation nonuniformity of the solar simulator, and the function is not limited to the method.
Claims (8)
1. A method for measuring the irradiation intensity distribution based on a photodiode array is characterized by comprising the following steps:
1) fixing each photodiode in the photodiode array on the circuit board, and connecting each photodiode with a data acquisition and recording system through a signal line;
2) placing a photodiode array on a light-gathering surface of a light-gathering photovoltaic photo-thermal system, and collecting and recording photo-generated current of the photodiode through a data collecting and recording system;
3) calculating the irradiation intensity received by each photodiode on the light-gathering surface by using the photo-generated current measured under the standard simulation light source and the photo-generated current of the photodiode obtained in the step 2); and then calculating the irradiation non-uniformity according to the irradiation intensity of the photodiode array.
2. The method for measuring the irradiation intensity distribution based on the photodiode array according to claim 1, wherein in the step 1), the photodiode array comprises two rows of photodiodes, the two rows of photodiodes are arranged in a staggered and empty-inserted arrangement mode, and a positive terminal and a negative terminal of each diode are connected with a data acquisition system.
3. The method of claim 2, wherein when the number of the first row of photodiodes is m and the number of the second row of photodiodes is n, the method further comprises the step of measuring the irradiance distribution based on the photodiode array
In the case of an even number, the number of the first,
when in use
In the case of an odd number of the groups,
wherein, w is the width of a plane needing to be subjected to irradiation intensity distribution measurement, and l is the side length of the diode.
4. The method for measuring the irradiation intensity distribution based on the photodiode array as claimed in claim 1, wherein in the step 1), the type of the photodiode is SFH 2400.
5. The method for measuring the irradiation intensity distribution based on the photodiode array as claimed in claim 1, wherein in step 1), each photodiode is fixed on the circuit board by soldering.
6. The method for measuring the irradiation intensity distribution based on the photodiode array as claimed in claim 1, wherein each photodiode is calibrated before step 2).
7. The method for measuring the irradiation intensity distribution based on the photodiode array according to claim 1, wherein in the step 3), the specific process of calculating the size of the irradiation intensity received by each photodiode on the light-condensing surface is as follows: suppose that the two rows of photodiodes receive irradiation intensities of G11，G12，……，G1m，G21，G22，……，G2nThen, there are:
in the above formula, GijRepresenting the irradiation intensity received by any one photodiode in the photodiode array, wherein i represents a row of the array and takes a value of 1 or 2, and j represents the first photodiode in a certain row; when i is 1, j is 1,2, … …, m; when i is 2, j is 1,2, … …, n; m is the number of photodiodes in the first row, n is the number of photodiodes in the second row, IijAnd Iij,refRespectively representing the photo-generated current of the photodiode under the condition of light concentration and under the condition of illumination of a standard simulated light source, GrefIs the irradiation intensity of a standard simulated light source.
8. The method for measuring the irradiation intensity distribution based on the photodiode array as claimed in claim 7, wherein in the step 3), the specific process of calculating the irradiation non-uniformity according to the irradiation intensity of the photodiode array is as follows:
in the above formula, σGFor simulating the irradiation intensity G of the light source with a standardrefThe irradiation non-uniformity after dimensionless,
is the average of the intensity of the radiation received by all the photodiodes in the array.
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| JP2000321202A (en) * | 1999-05-10 | 2000-11-24 | Hitachi Ltd | Multi-wavelength spectrophotometer and photodiode arrayed photodetector |
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| CN108225552A (en) * | 2017-12-25 | 2018-06-29 | 中国科学院电工研究所 | Tower power station heliostat field optically focused energy-flux density distribution measurement method |
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| JP2000321202A (en) * | 1999-05-10 | 2000-11-24 | Hitachi Ltd | Multi-wavelength spectrophotometer and photodiode arrayed photodetector |
| CN1858906A (en) * | 2006-05-26 | 2006-11-08 | 中国科学院上海技术物理研究所 | Super long alignment infrared focus plane detector |
| CN102820308A (en) * | 2012-08-03 | 2012-12-12 | 中国科学院上海技术物理研究所 | Dual-waveband linear infrared focal plane detector integrated structure |
| CN106989817A (en) * | 2017-05-15 | 2017-07-28 | 华北电力大学 | A kind of light-gathering heat collection pipe scanning means based on fiber array |
| CN108225552A (en) * | 2017-12-25 | 2018-06-29 | 中国科学院电工研究所 | Tower power station heliostat field optically focused energy-flux density distribution measurement method |
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