CN108181015B - Hot spot temperature testing method for half photovoltaic module - Google Patents
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- CN108181015B CN108181015B CN201711449474.4A CN201711449474A CN108181015B CN 108181015 B CN108181015 B CN 108181015B CN 201711449474 A CN201711449474 A CN 201711449474A CN 108181015 B CN108181015 B CN 108181015B
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- 238000012360 testing method Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000004088 simulation Methods 0.000 claims abstract description 8
- 238000010998 test method Methods 0.000 claims description 7
- 210000003127 knee Anatomy 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0066—Radiation pyrometry, e.g. infrared or optical thermometry for hot spots detection
Abstract
The invention provides a hot spot temperature testing method for a half photovoltaic module, which comprises the following steps: s1, selecting a cell, and determining the maximum cell with electric leakage in the half photovoltaic module; s2, selecting an area, and determining the worst covering area of the half photovoltaic module; s3, selecting hot spots, selecting the hot spots on each selected largest leaky battery plate, and covering non-hot spot areas by using the worst covering area; and S4, exposing, namely, short-circuiting and connecting the positive terminal and the negative terminal of the half photovoltaic module, putting the half photovoltaic module into a steady-state simulation box for exposure, and determining the hotspot temperature of the half photovoltaic module. The method for testing the hot spot temperature of the half photovoltaic assembly can determine the worst covering area of the half photovoltaic assembly, can quickly and simply analyze the hot spot temperature of the half photovoltaic assembly, provides a basis for analyzing the hot spot of the half photovoltaic assembly, and conveniently evaluates hot spot risks so as to improve the reliability of the half photovoltaic assembly.
Description
Technical Field
The invention relates to a hot spot testing method for a half photovoltaic module, and belongs to the technical field of photovoltaic power generation.
Background
Due to the rapid increase of the market demand of photovoltaic modules, the requirements of power station investors on the module efficiency and module power of the photovoltaic modules are higher and higher, the conventional photovoltaic modules gradually quit the competitive market, and a half photovoltaic module is widely applied and researched as a photovoltaic module with high power; the existing half-piece photovoltaic module is generally formed by cutting a common photovoltaic cell into two half pieces through laser scribing, connecting the half pieces of the cut photovoltaic cell in series, and manufacturing the half piece of the photovoltaic module in a parallel mode, so that the half piece of the photovoltaic module can effectively reduce the current mismatch of the cell pieces in the module, and the self loss of the current in the module is reduced, therefore, the output power of the half piece of the photovoltaic module is about 10W higher than that of the whole piece of the cell module in the same type, and the half piece of the photovoltaic module has the advantages of low temperature coefficient, good weak light and the like.
However, since the half-sheet photovoltaic module changes the original module circuit connection mode, the original hot spot test method is no longer applicable.
In view of the above, it is necessary to provide a hot spot testing method suitable for a half-wafer photovoltaic module to accurately evaluate the hot spot risk of the half-wafer photovoltaic module.
Disclosure of Invention
The invention aims to provide a hot spot temperature testing method for a half photovoltaic module, which can quickly and simply test the hot spot temperature of the half photovoltaic module so as to evaluate the risk of hot spots of the half photovoltaic module.
In order to achieve the purpose, the invention provides a hot spot temperature testing method for a half photovoltaic module, which mainly comprises the following steps:
s1, selecting a cell, and determining the maximum cell with electric leakage in the half photovoltaic module;
s2, selecting area, grouping the battery strings in the half photovoltaic module, and simultaneously covering the largest leakage battery piece in each battery string group according to proportion so as to determine the worst covering area of the half photovoltaic module;
s3, selecting hot spots, namely selecting the hot spots on each selected maximum electric leakage battery piece, covering non-hot spot areas by using the worst covering area, and pasting thermocouples at the hot spots and the non-hot spot areas of each maximum electric leakage battery piece;
and S4, exposing, namely, short-circuiting and connecting the positive terminal and the negative terminal of the half photovoltaic module, putting the half photovoltaic module into a steady-state simulation box for exposure, and determining the hotspot temperature of the half photovoltaic module.
As a further improvement of the present invention, the step S1 specifically includes:
s11, covering each battery piece in the half photovoltaic assembly in sequence, and testing a corresponding I-V curve;
and S12, merging the I-V curves corresponding to the battery pieces on the same battery string on a graph, and taking the battery piece with the largest leakage current in each battery string as the battery piece with the largest leakage current.
As a further improvement of the present invention, the step S2 specifically includes:
s21, measuring the maximum output power P of the half photovoltaic module under the standard test environmentmaxAnd working current I of half photovoltaic modulem；
S22, dividing the battery strings in the half photovoltaic module into battery string groups according to the adjacent and parallel principle;
s23, covering the step diameter according to 5% of the area, simultaneously covering all the largest leakage battery pieces in the same battery string group, and testing the I-V curve of the battery string group under the corresponding covering area to determine the inflection point current I of each group of battery string groupsk；
S24, comparing the working current I in the step S21mAnd the inflection point current I in step S23kThe knee current IkAnd the operating current ImThe coverage area corresponding to the closest approach is the worst coverage area.
As a further improvement of the invention, in the step S21, the solar irradiation intensity of the standard test environment is 1000W/m2The temperature of the battery piece is 25 ℃, and the mass of the atmosphere is AM 1.5; the working current ImIs the maximum output power P of a half photovoltaic modulemaxThe corresponding operating current.
As a further improvement of the present invention, in step S23, the battery pieces with the largest leakage in the same battery string set are covered in the areas of 5%, 10%, 15%, 20%, 25% and 30% in sequence.
As a further improvement of the present invention, the step S3 specifically includes:
s31, primary selection, namely, sequentially carrying out full shading on the selected largest leakage battery piece, detecting the approximate position of a hot spot by using an infrared thermal imager, and finding out a non-hot spot area;
s32, selecting, covering the non-hot-spot area by using the worst covering area, and detecting the accurate position of the hot spot by using an infrared thermal imager;
and S33, capturing hot spots, wherein 5 thermocouples are respectively adhered to the hot spot of each battery plate with the largest leakage current, and one thermocouple is respectively adhered to a selected reference point in a non-hot spot area.
As a further improvement of the present invention, the step S4 specifically includes:
s41, connecting the positive and negative terminals of the half photovoltaic module in a short circuit mode, placing the half photovoltaic module in a steady-state simulation box, sequentially taking one group of each battery string group to cover a non-hot-spot area according to the worst covering area, and exposing the hot-spot position and other battery string groups to enable the temperature of the measured hot spot to be highest;
and S42, sequentially irradiating each group of battery string groups for more than 1 hour, collecting temperature data of each time period, and counting the highest temperature value after the temperature is stable, wherein the highest temperature value is the hot spot temperature of the half photovoltaic module.
As a further improvement of the invention, the irradiation intensity of the steady-state simulation box in the step S41 is 800-1000W/m2The temperature is 25 +/-5 ℃.
The invention has the beneficial effects that: the method for testing the hot spot temperature of the half photovoltaic assembly can determine the worst covering area of the half photovoltaic assembly, and can quickly, simply and conveniently analyze the hot spot temperature of the half photovoltaic assembly, so that the hot spot risk of the half photovoltaic assembly is conveniently evaluated, and the reliability of the half photovoltaic assembly is improved.
Drawings
FIG. 1 is a flow chart of a hot spot temperature testing method of a half-wafer photovoltaic module according to the present invention.
Fig. 2 is an I-V curve chart of the selected maximum leakage cell.
Fig. 3 is a schematic diagram of maximum cell sheet covering in leakage current in a battery string.
Fig. 4 is a schematic diagram of the I-V curve of the maximum leaky cell shown in fig. 3 when covered.
Fig. 5 is a schematic diagram of the infrared thermal imager test in the initial selection process of S31 according to the present invention.
FIG. 6 is a schematic diagram of the IR thermal imager testing during the beneficiation process of S32 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1, the present invention provides a method for testing hot spot temperature of a half-wafer photovoltaic device, which mainly comprises the following steps:
s1, determining the maximum leakage cell in the half photovoltaic module;
s2, grouping the battery strings in the half photovoltaic module, and simultaneously covering the largest electric leakage battery piece in each battery string group according to the proportion so as to determine the worst covering area of the half photovoltaic module;
s3, selecting a hot spot on each selected maximum electric leakage battery piece, covering a non-hot spot area by using the worst covering area, and pasting thermocouples at the hot spot and the non-hot spot area of each maximum electric leakage battery piece;
and S4, short-circuiting and connecting the positive terminal and the negative terminal of the half photovoltaic module, and placing the half photovoltaic module into a steady-state simulation box for solarization to determine the hotspot temperature of the half photovoltaic module.
The following description will specifically describe steps S1-S4.
The step S1 specifically includes:
s11, covering each battery piece in the half photovoltaic assembly in sequence, and testing a corresponding piece selection I-V curve;
and S12, merging the chip selection I-V curves corresponding to the battery chips on the same battery string on a graph, and taking the battery chip with the largest leakage current in each battery string as the battery chip with the largest leakage current.
Referring to fig. 2, an I-V curve in the step S1 of the method for testing hot spot temperature of a half-wafer photovoltaic module according to the present invention is illustrated by taking only a wafer selection I-V curve of a string of battery strings as an example in this specification, specifically, in step S1, when the wafer selection I-V curves corresponding to the battery wafers located on the same battery string are merged onto one graph, the uppermost wafer selection I-V curve has the largest leakage current, and the battery wafer corresponding to the wafer selection I-V curve has the largest leakage current.
The step S2 specifically includes:
s21, measuring the maximum output power P of the half photovoltaic module under the standard test environmentmaxAnd working current I of half photovoltaic modulem；
S22, dividing the battery strings in the half photovoltaic module into battery string groups according to the adjacent and parallel principle;
s23, covering the step diameter according to 5% of the area, simultaneously covering all the largest leakage battery pieces in the same battery string group, and testing the I-V curve of the battery string group under the corresponding covering area to determine the inflection point current I of each group of battery string groupsk；
S24, comparing the working current I in the step S21mAnd the inflection point current I in step S23kThe knee current IkAnd the operating current ImThe coverage area corresponding to the closest approach is the worst coverage area.
In the embodiment of the present invention, the battery string set in step S22 includes two adjacent and parallel battery strings, that is, in step S23, there are two all leaky maximum battery cells in the same battery string set, and in the embodiment of the present invention, the solar radiation intensity of the standard test environment in step S21 is 1000W/m2The temperature of the battery piece is 25 ℃, the mass of the atmosphere is AM1.5, and the working current ImIs the maximum output power P of a half photovoltaic modulemaxThe corresponding operating current.
Please refer to fig. 3, which is a schematic diagram of the half photovoltaic module in step S2 when the maximum leaky battery cell in the same battery string is covered, wherein the covering ratio of the maximum leaky battery cell in each battery string set gradually increases according to a 5% step, and further, in the present invention, the same cell in the same battery string is coveredCovering the largest electric leakage cell in the cell string group according to areas of 5%, 10%, 15%, 20%, 25% and 30% in sequence; referring to FIG. 4, as the coverage area (a, b, c, d, and a < b < c < d) is gradually increased, the knee current IkThe value is gradually reduced when the current I is at the knee pointkAnd operating current ImValue (half photovoltaic module maximum output power P)maxCorresponding operating current) is the worst coverage area; specifically, because the situation and the performance of the largest leaky battery cell in each group of battery string groups are different, the worst cover area of the largest leaky battery cell in different battery string groups may be different, that is, the worst cover area needs to be determined according to the actual test situation.
The step S3 specifically includes:
s31, primary selection, namely, sequentially carrying out full shading on the selected largest leakage battery piece, detecting the approximate position of a hot spot by using an infrared thermal imager, and finding out a non-hot spot area;
s32, selecting, covering the non-hot-spot area by using the worst covering area, and detecting the accurate position of the hot spot by using an infrared thermal imager;
and S33, capturing hot spots, sticking 5 thermocouples to the hot spot of each battery plate with the largest leakage (selecting the highest temperature), and sticking one thermocouple to a reference point selected by a non-hot spot area (namely a covering area).
Please refer to fig. 5 and 6, which show the test image of the infrared thermal imager in the step S31 of the initial selection process and the test image of the infrared thermal imager in the step S32 of the selection process, in the process, the black masking sheet is firstly used to completely shield the largest leaky battery cell in sequence to select the non-hot spot region; after the non-hot spot area is selected, a black masking sheet is used for masking the non-hot spot area according to the worst masking area so as to select the position of the hot spot; finally, 5 thermocouples are respectively adhered to the hot spot of each battery plate with the maximum leakage, and one thermocouple is adhered to any selected reference point in a non-hot spot area; and 5 thermocouples are respectively bonded at the hot point of each maximum creepage cell so as to select the highest temperature of each maximum creepage cell and effectively monitor the temperature at the hot point.
The step S4 specifically includes:
s41, short-circuiting the positive and negative terminals of the half photovoltaic module, and placing the half photovoltaic module into a steady-state simulation box (the irradiation intensity is 800-1000W/m)2In the temperature of 25 +/-5 ℃), covering a non-hot spot region by one group of each battery string group according to the worst covering area, and exposing the hot spot position and other battery string groups to ensure that the temperature of the measured hot spot is highest;
and S42, sequentially irradiating each group of battery string groups for more than 1 hour, collecting temperature data of each time period, and counting the highest temperature value after the temperature is stable, wherein the highest temperature value is the hot spot temperature of the half photovoltaic module.
In the step S42, since the temperature data of each battery string will float along with the extension of the irradiation time at the initial irradiation stage, the highest temperature value needs to be counted after the temperature is stabilized when the hot spot temperature of the half photovoltaic module is measured, so as to ensure that the measured hot spot temperature of the half photovoltaic module is accurate.
In summary, the method for testing the hot spot temperature of the half photovoltaic module can determine the worst coverage area of the half photovoltaic module, so that the hot spot temperature of the half photovoltaic module can be analyzed quickly and simply, a basis is provided for hot spot analysis of the half photovoltaic module, hot spot risks can be evaluated conveniently, and the reliability of the half photovoltaic module can be further improved.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the spirit and scope of the present invention.
Claims (7)
1. A hot spot temperature testing method for a half photovoltaic module is characterized by comprising the following steps:
s1, selecting a cell, and determining the maximum cell with electric leakage in the half photovoltaic module;
s2, selecting area, grouping the battery strings in the half photovoltaic module, and simultaneously covering the largest leakage battery piece in each battery string group according to proportion so as to determine the worst covering area of the half photovoltaic module;
s3, selecting hot spots, namely selecting the hot spots on each selected maximum electric leakage battery piece, covering non-hot spot areas by using the worst covering area, and pasting thermocouples at the hot spots and the non-hot spot areas of each maximum electric leakage battery piece;
s4, determining the hot spot temperature of the half photovoltaic module; the method comprises the following steps:
s41, connecting the positive and negative terminals of the half photovoltaic module in a short circuit mode, placing the half photovoltaic module in a steady-state simulation box, sequentially taking one group of each battery string group to cover a non-hot-spot area according to the worst covering area, and exposing the hot-spot position and other battery string groups to enable the temperature of the measured hot spot to be highest;
and S42, sequentially irradiating each group of battery string groups for more than 1 hour, collecting temperature data of each time period, and counting the highest temperature value after the temperature is stable, wherein the highest temperature value is the hot spot temperature of the half photovoltaic module.
2. The half-sheet photovoltaic module hot spot temperature test method according to claim 1, characterized in that: the step S1 specifically includes:
s11, covering each battery piece in the half photovoltaic assembly in sequence, and testing a corresponding I-V curve;
and S12, merging the I-V curves corresponding to the battery pieces on the same battery string on a graph, and taking the battery piece with the largest leakage current in each battery string as the battery piece with the largest leakage current.
3. The half-sheet photovoltaic module hot spot temperature test method according to claim 1, characterized in that: the step S2 specifically includes:
s21, measuring the maximum output power P of the half photovoltaic module under the standard test environmentmaxAnd working current I of half photovoltaic modulem；
S22, dividing the battery strings in the half photovoltaic module into battery string groups according to the adjacent and parallel principle;
s23, according to 5%Covering the step diameter by area, simultaneously covering all the largest leakage cells in the same battery string group, and testing the I-V curve of the battery string group under the corresponding covering area to determine the inflection point current I of each group of battery string groupsk；
S24, comparing the working current I in the step S21mAnd the inflection point current I in step S23kThe knee current IkAnd the operating current ImThe coverage area corresponding to the closest approach is the worst coverage area.
4. The half-sheet photovoltaic module hot spot temperature test method according to claim 3, characterized in that: in the step S21, the solar irradiation intensity of the standard test environment is 1000W/m2The temperature of the battery piece is 25 ℃, and the mass of the atmosphere is AM 1.5; the working current ImIs the maximum output power P of a half photovoltaic modulemaxThe corresponding operating current.
5. The half-sheet photovoltaic module hot spot temperature test method according to claim 3, characterized in that: in step S23, the battery pieces with the largest leakage in the same battery string group are covered according to areas of 5%, 10%, 15%, 20%, 25% and 30% in sequence.
6. The half-sheet photovoltaic module hot spot temperature test method according to claim 1, characterized in that: the step S3 specifically includes:
s31, primary selection, namely, sequentially carrying out full shading on the selected largest leakage battery piece, detecting the approximate position of a hot spot by using an infrared thermal imager, and finding out a non-hot spot area;
s32, selecting, covering the non-hot-spot area by using the worst covering area, and detecting the accurate position of the hot spot by using an infrared thermal imager;
and S33, capturing hot spots, wherein 5 thermocouples are respectively adhered to the hot spot of each battery plate with the largest leakage current, and one thermocouple is respectively adhered to a selected reference point in a non-hot spot area.
7. Half-piece according to claim 1The hot spot temperature test method of the photovoltaic module is characterized by comprising the following steps: the irradiation intensity of the steady-state simulation box in the step S41 is 800-1000W/m2The temperature is 25 +/-5 ℃.
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| CN113765480B (en) * | 2021-10-28 | 2022-04-22 | 晶科能源(海宁)有限公司 | Photovoltaic module hot spot testing method and photovoltaic module hot spot testing device |
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| CN109284879B (en) * | 2017-07-19 | 2022-03-01 | 阿特斯阳光电力集团股份有限公司 | Photovoltaic module hot spot evaluation method |
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