CN110783323A - High-power integrated device applied to inverter welding machine - Google Patents

High-power integrated device applied to inverter welding machine Download PDF

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Publication number
CN110783323A
CN110783323A CN201910854337.1A CN201910854337A CN110783323A CN 110783323 A CN110783323 A CN 110783323A CN 201910854337 A CN201910854337 A CN 201910854337A CN 110783323 A CN110783323 A CN 110783323A
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CN
China
Prior art keywords
clad plate
ceramic copper
fast recovery
bipolar transistor
insulated gate
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CN201910854337.1A
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Chinese (zh)
Inventor
车湖深
吕冬洋
方庆
郭小波
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Hangzhou Taixin Microelectronics Co Ltd
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Hangzhou Taixin Microelectronics Co Ltd
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Priority to CN201910854337.1A priority Critical patent/CN110783323A/en
Publication of CN110783323A publication Critical patent/CN110783323A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49531—Additional leads the additional leads being a wiring board
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention provides a high-power integrated device applied to an inverter welding machine, which relates to the technical field of inverter welding machines and comprises the following components: a substrate on which are provided: the first ceramic copper-clad plate is welded with a plurality of rectifier diodes; the second ceramic copper-clad plate is welded with a first insulated gate bipolar transistor and a second insulated gate bipolar transistor; the third ceramic copper-clad plate is welded with a third insulated gate bipolar transistor and a fourth bipolar transistor; a fourth ceramic copper-clad plate welded with a plurality of rectifying fast recovery diodes; the power terminals are respectively arranged on the first ceramic copper-clad plate, the second ceramic copper-clad plate, the third ceramic copper-clad plate and the fourth ceramic copper-clad plate; the signal terminals are respectively arranged on the second ceramic copper-clad plate and the third ceramic copper-clad plate; and the shell covers the substrate, and holes for the power terminals and the signal terminals to extend out are formed in the shell. The invention has the advantages of high integration level, small volume, low cost, higher reliability and higher production convenience.

Description

High-power integrated device applied to inverter welding machine
Technical Field
The invention relates to the technical field of inverter welding machines, in particular to a high-power integrated device applied to an inverter welding machine.
Background
The inverter welding machine is basic equipment of modern industry and has wide application industry. The research and development of the inverter welding machine in China starts at the end of the 70 th year in the 20 th century, and starts to develop in the 80 th year in the 20 th century, and through repeated improvement and perfection, a large amount of product research and development and production experiences are accumulated, the main circuit and the overall design of products gradually tend to be reasonable for determining key factors of the reliability of the inverter welding machine, the technology tends to be mature, the optimal matching of product parameters is realized, and the problem of the reliability of the inverter welding machine is basically solved. The production cost and the selling price of the inversion welding and cutting equipment are reduced to some extent, the cost performance advantage is shown, the rapid development trend is shown, the application range is wider and wider, and the specific gravity is higher and higher.
At present, the 15-100 kHz inversion welding and cutting technology is mature, the quality of products is high, and a series of products are formed. The general development trend of the future inversion welding and cutting equipment is towards automation, high efficiency, intellectualization, modularization and lightweight development, and the inversion welding and cutting equipment is mainly improved in performance, reliability and widened in application and is widely applied to various welding, cutting and other processes.
At present, inverter welding machine power devices on the market are dispersedly used and comprise a rectifier bridge module, an ITBT (integrated circuit bit) module and a fast recovery diode module, along with the development of power electronic technology, the requirement of the industry on the reliability of the modules is higher and higher, the integration level of the devices is higher and higher, and a module product with higher and more stable integration level is urgently needed.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a high-power integrated device applied to an inverter welding machine, which specifically comprises the following components:
a substrate, on which:
the first ceramic copper-clad plate is welded on the substrate, and a plurality of rectifier diodes are welded on the first ceramic copper-clad plate;
the second ceramic copper-clad plate is welded on the substrate, is positioned on the right side of the first ceramic copper-clad plate and is welded with a first insulated gate bipolar transistor and a second insulated gate bipolar transistor positioned on the right side of the first insulated gate bipolar transistor;
the first insulated gate bipolar transistor is provided with a first fast recovery diode, and the first fast recovery diode is arranged on one side of the first ceramic copper-clad plate close to the second ceramic copper-clad plate;
the second insulated gate bipolar transistor is provided with a second fast recovery diode, and the second fast recovery diode is arranged on one side of the second ceramic copper-clad plate, which is far away from the first ceramic copper-clad plate;
the third ceramic copper-clad plate is welded on the substrate, is positioned below the second ceramic copper-clad plate and is welded with a third insulated gate bipolar transistor and a fourth bipolar transistor positioned on the right side of the third insulated gate bipolar transistor;
the third insulated gate bipolar transistor is provided with a third fast recovery diode, and the third fast recovery diode is arranged on one side of the first ceramic copper-clad plate close to the third ceramic copper-clad plate;
the fourth insulated gate bipolar transistor is provided with a fourth fast recovery diode, and the fourth fast recovery diode is arranged on one side of the third ceramic copper-clad plate, which is far away from the first ceramic copper-clad plate;
the fourth ceramic copper-clad plate is welded on the substrate, is positioned on the right sides of the second ceramic copper-clad plate and the third ceramic copper-clad plate and is welded with a plurality of rectifier fast recovery diodes;
the power terminals are respectively arranged on the first ceramic copper-clad plate, the second ceramic copper-clad plate, the third ceramic copper-clad plate and the fourth ceramic copper-clad plate;
the signal terminals are respectively arranged on the second ceramic copper-clad plate and the third ceramic copper-clad plate;
and the shell covers the substrate, and holes for the power terminals and the signal terminals to extend out are formed in the shell.
Preferably, the power terminal specifically includes:
the power supply input terminal is arranged on the first ceramic copper-clad plate and positioned on the left side of each rectifier diode, and the high-power integrated device is externally connected with a three-phase alternating current power supply through the power supply input terminal;
the first output terminal is arranged on the first ceramic copper-clad plate and positioned above the right side of the power input terminal to be used as an output end of the first ceramic copper-clad plate;
the second output terminal is arranged on the first ceramic copper-clad plate and positioned at the lower right part of the power input terminal to be used as an output end of the first ceramic copper-clad plate;
the first input terminal is arranged on the first ceramic copper-clad plate and positioned on the right side of the first output terminal to be used as an input end of the second ceramic copper-clad plate;
the second input terminal is arranged on the first ceramic copper-clad plate and positioned on the right side of the second output terminal to be used as an input end of the second ceramic copper-clad plate;
the third output terminal is arranged on the third ceramic copper-clad plate and is positioned at the lower left of the third insulated gate bipolar transistor to be used as the output ends of the second ceramic copper-clad plate and the third ceramic copper-clad plate;
the fourth output terminal is arranged on the third ceramic copper-clad plate and positioned on the right side of the third output terminal to be used as the output ends of the second ceramic copper-clad plate and the third ceramic copper-clad plate;
the plurality of third input terminals are respectively arranged on the second ceramic copper-clad plate and the fourth ceramic copper-clad plate, and are positioned at the upper right part of the second insulated gate bipolar transistor and above each rectifying fast recovery diode;
the plurality of fourth input terminals are respectively arranged on the third ceramic copper-clad plate and the fourth ceramic copper-clad plate, and are positioned at the right lower part of the fourth insulated gate bipolar transistor and below each rectifying fast recovery diode;
and the fifth output terminals are arranged on the fourth ceramic copper-clad plate and positioned on the right side of each fast recovery rectifier diode to serve as output ends of the high-power integrated device.
Preferably, the number of the rectifier diodes is six, each rectifier diode is connected with the first ceramic copper-clad plate in an aluminum wire bonding manner to form a three-phase rectifier circuit, and the rectifier diodes specifically include:
a first rectifying diode having a cathode connected to the first output terminal and an anode connected to an R terminal of the three-phase ac power supply through the power input terminal;
a second rectifying diode having a cathode connected to the first output terminal and an anode connected to the S-terminal of the three-phase ac power supply through the power input terminal;
a third rectifying diode having a cathode connected to the first output terminal and an anode connected to a T-terminal of the three-phase ac power supply through the power input terminal;
a fourth rectifying diode, a cathode of which is connected to the R terminal of the three-phase ac power supply, and an anode of which is connected to the second output terminal;
a fifth rectifying diode, a cathode of which is connected to the S terminal of the three-phase ac power supply, and an anode of which is connected to the second output terminal;
and a cathode of the sixth rectifying diode is connected to the T-terminal of the three-phase ac power supply, and an anode of the sixth rectifying diode is connected to the second output terminal.
Preferably, the first insulated gate bipolar transistor and the second insulated gate bipolar transistor are connected with the second ceramic copper-clad plate in an aluminum wire bonding manner, and the third insulated gate bipolar transistor and the fourth insulated gate bipolar transistor are connected with the third ceramic copper-clad plate in an aluminum wire bonding manner to form an H-bridge inverter circuit, wherein the H-bridge inverter circuit specifically comprises:
a collector of the first insulated gate bipolar transistor is respectively connected with the first input terminal and a cathode of the first fast recovery diode, and an emitter of the first insulated gate bipolar transistor is respectively connected with the third output terminal and an anode of the first fast recovery diode;
and the collector electrode of the second insulated gate bipolar transistor is respectively connected with the third output terminal and the cathode of the second fast recovery diode, and the emitter electrode of the second insulated gate bipolar transistor is respectively connected with the first input terminal and the anode of the second fast recovery diode.
A collector of the third insulated gate bipolar transistor is respectively connected with the first input terminal and a cathode of the third fast recovery diode, and an emitter of the third insulated gate bipolar transistor is respectively connected with the fourth output terminal and an anode of the third fast recovery diode;
and the collector of the fourth insulated gate bipolar transistor is respectively connected with the fourth output terminal and the cathode of the fourth fast recovery diode, and the emitter of the fourth insulated gate bipolar transistor is respectively connected with the first input terminal and the anode of the fourth fast recovery diode.
Preferably, the number of the rectifying fast recovery diodes is six, each rectifying fast recovery diode is connected with the fourth ceramic copper-clad plate in an aluminum wire bonding manner to form a low-voltage single-phase rectifying circuit, and the rectifying fast recovery diodes specifically include:
a fifth fast recovery diode, an anode of the fifth fast recovery diode being connected to the third input terminal, and the fifth fast recovery diode being connected to the fifth output terminal;
a sixth fast recovery diode, an anode of which is connected to the third input terminal, and the sixth fast recovery diode is connected to the fifth output terminal;
a seventh fast recovery diode, an anode of the seventh fast recovery diode being connected to the third input terminal, and the seventh fast recovery diode being connected to the fifth output terminal;
an eighth fast recovery diode, an anode of which is connected to the fourth input terminal, and the eighth fast recovery diode is connected to the fifth output terminal;
a ninth fast recovery diode, an anode of which is connected to the fourth input terminal and the ninth fast recovery diode is connected to the fifth output terminal;
a tenth fast recovery diode having an anode connected to the fourth input terminal and connected to the fifth output terminal.
Preferably, the power terminal includes:
the fixing part is fixed on the substrate, and a bump is arranged on the fixing part;
the bending part is hinged to the fixing part and extends out of the hole, and a through hole is formed in the bending part.
Preferably, each power terminal is connected with an external device through a fixing nut, one side, away from the substrate, of the shell is provided with a plurality of first grooves for placing the fixing nuts, the shape of each second groove is fitted with that of the corresponding fixing nut, and the bending portion of each power terminal is bent above the corresponding first groove at the hinged position of the corresponding fixing portion.
Preferably, the high-power integrated device is connected with a driving PCB board through each signal terminal, and the driving PCB board is placed in a second groove on one side of the housing, which is far away from the substrate.
Preferably, the depth of the second groove is 15 mm.
Preferably, the signal terminal includes:
the first signal terminal is arranged on the second copper-clad ceramic plate and is positioned above the first insulated gate bipolar transistor, and the first signal terminal is connected with the grid electrode of the first insulated gate bipolar transistor;
the second signal terminal is arranged on the second copper-clad ceramic plate and is positioned on the right side of the first signal terminal, and the second signal terminal is connected with the emitter of the first insulated gate bipolar transistor;
the third signal terminal is arranged on the second copper-clad ceramic plate and positioned on the right side of the second signal terminal, and the third signal terminal is connected with the grid electrode of the second insulated gate bipolar transistor;
the fourth signal terminal is arranged on the second copper-clad ceramic plate and is positioned on the right side of the third signal terminal, and the fourth signal terminal is connected with an emitter of the second insulated gate bipolar transistor;
the fifth signal terminal is arranged on the third copper-clad ceramic plate and is positioned on the right side of the third output terminal, and the fifth signal terminal is connected with the grid electrode of the third insulated gate bipolar transistor;
the sixth signal terminal is arranged on the third copper-clad ceramic plate and is positioned on the right side of the fifth signal terminal, and the sixth signal terminal is respectively connected with the emitter of the third insulated gate bipolar transistor and the emitter of the fourth insulated gate bipolar transistor;
and the seventh signal terminal is arranged on the third copper-clad ceramic plate and is positioned on the right side of the sixth signal terminal, and the seventh signal terminal is connected with the grid electrode of the fourth insulated gate bipolar transistor.
The technical scheme has the following advantages or beneficial effects: the high-power integrated device has the advantages of high integration level, small volume, low cost, higher reliability and higher production convenience. .
Drawings
FIG. 1 is an exploded view of a high power integrated device used in an inverter welder, in accordance with a preferred embodiment of the present invention;
FIG. 2 is a schematic diagram of an external structure of a high power integrated device applied to an inverter welding machine according to a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of an internal structure of a high power integrated device applied to an inverter welding machine according to a preferred embodiment of the present invention;
FIG. 4 is a schematic diagram of a three-phase rectifier circuit according to a preferred embodiment of the present invention;
FIG. 5 is a diagram of an H-bridge inverter circuit according to a preferred embodiment of the present invention;
fig. 6 is a schematic structural diagram of a low-voltage single-phase rectification circuit according to a preferred embodiment of the invention.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments. The present invention is not limited to the embodiment, and other embodiments may be included in the scope of the present invention as long as the gist of the present invention is satisfied.
In a preferred embodiment of the present invention, based on the above problems in the prior art, there is provided a high power integrated device applied to an inverter welding machine, as shown in fig. 1, which specifically includes:
a substrate 1, on the substrate 1:
the first ceramic copper-clad plate 11 is welded on the substrate 1, and a plurality of rectifier diodes are welded on the first ceramic copper-clad plate 11;
the second copper-clad ceramic plate 12 is welded on the substrate 1, the second copper-clad ceramic plate 12 is positioned on the right side of the first copper-clad ceramic plate 11 and is welded with a first insulated gate bipolar transistor T1 and a second insulated gate bipolar transistor T2 positioned on the right side of the first insulated gate bipolar transistor T1;
the first insulated gate bipolar transistor T1 is provided with a first fast recovery diode D1, and the first fast recovery diode D1 is arranged on one side of the first copper clad ceramic plate 11 close to the second copper clad ceramic plate 12;
the second insulated gate bipolar transistor T2 is provided with a second fast recovery diode D2, and the second fast recovery diode D2 is arranged on one side of the second copper clad ceramic plate 12, which is far away from the first copper clad ceramic plate 11;
the third copper-clad ceramic plate 13 is welded on the substrate 1, the third copper-clad ceramic plate 13 is positioned below the second copper-clad ceramic plate 12 and is welded with a third insulated gate bipolar transistor T3 and a fourth bipolar transistor T4 positioned on the right side of the third insulated gate bipolar transistor T3;
the third insulated gate bipolar transistor T3 is provided with a third fast recovery diode D3, and the third fast recovery diode D3 is arranged on one side of the first copper clad ceramic plate 11 close to the third copper clad ceramic plate 13;
the fourth insulated gate bipolar transistor T4 is provided with a fourth fast recovery diode D4, and the fourth fast recovery diode D4 is arranged on one side of the third copper clad ceramic plate 13, which is far away from the first copper clad ceramic plate 11;
the fourth ceramic copper-clad plate 14 is welded on the substrate 1, the fourth ceramic copper-clad plate 14 is positioned on the right sides of the second ceramic copper-clad plate 12 and the third ceramic copper-clad plate 13, and a plurality of rectifying fast recovery diodes are welded on the fourth ceramic copper-clad plate 14;
the power terminals 5 are respectively arranged on the first ceramic copper-clad plate 11, the second ceramic copper-clad plate 12, the third ceramic copper-clad plate 13 and the fourth ceramic copper-clad plate 14;
the signal terminals 6 are respectively arranged on the second ceramic copper-clad plate 12 and the third ceramic copper-clad plate 13;
the housing 2 covers the substrate 1, and the housing 2 is provided with holes 21 through which the power terminals 5 and the signal terminals 6 extend.
Specifically, in this embodiment, the substrate 1 of the high-power integrated device of the present invention preferably adopts a copper base plate, the copper base plate adopts T2 red copper material, and the surface is plated with solderable nickel and is subjected to arc pre-bending treatment. Further, the manufacturing process of the high-power device of the invention is as follows:
firstly, welding four ceramic copper clad plates with front etched circuits on a substrate 1, wherein the four ceramic copper clad plates are respectively a first ceramic copper clad plate 11, a second ceramic copper clad plate 12, a third ceramic copper clad plate 13 and a fourth ceramic copper clad plate 14. Six rectifier diodes, four insulated gate bipolar transistors, four fast recovery diodes and six rectifier fast recovery diodes are placed on the ceramic copper-clad plate in a vacuum welding mode. The vacuum welding process effectively reduces the thermal resistance of the high-power integrated device and effectively improves the heat dissipation capacity of the high-power integrated device.
The six rectifier diodes are placed on the first ceramic copper-clad plate 11, and each rectifier diode is connected with the first ceramic copper-clad plate 11 in an aluminum wire bonding mode to form a three-phase rectifier circuit; the surface of the rectifier diode is plated with an aluminum layer so as to be beneficial to bonding with an aluminum wire. The aluminum wire connection mode is preferably an ultrasonic bonding mode, so that the production efficiency and the product consistency of the power integrated device are effectively improved. The front surface of the rectifier diode is made of aluminum, the back surface of the rectifier diode is made of silver, and the back surface of the rectifier diode is connected with the first ceramic copper-clad plate 11 through a vacuum welding technology.
Two of the four insulated gate bipolar transistors are placed on the second copper clad ceramic plate 12, and the other two are placed on the third copper clad ceramic plate 13. The four fast recovery diodes are used as freewheeling diodes of the four insulated gate bipolar transistors, two fast recovery diodes of the two insulated gate bipolar transistors close to the first ceramic copper clad laminate 11 are placed on the first ceramic copper clad laminate 11, and two fast recovery diodes of the other two insulated gate bipolar transistors are respectively placed on the same ceramic copper clad laminate with the corresponding insulated gate bipolar transistors. The four insulated gate bipolar transistors and the four corresponding fast recovery diodes thereof are respectively connected with the ceramic copper clad plates arranged on the insulated gate bipolar transistors in an aluminum wire bonding mode to form an H-bridge inverter circuit; the surfaces of the four insulated gate bipolar transistors and the four corresponding fast recovery diodes are plated with aluminum layers so as to be beneficial to bonding with aluminum wires. The aluminum wire connection mode is preferably an ultrasonic bonding mode, and the production efficiency of the module and the product consistency are effectively improved. The four insulated gate bipolar transistors and the four corresponding fast recovery diodes are made of aluminum as the front material and silver as the back material, and the back surfaces of the four insulated gate bipolar transistors and the corresponding ceramic copper clad plates are connected by adopting a vacuum welding technology.
The six rectifying fast recovery diodes are placed on the fourth ceramic copper-clad plate 14, and each rectifying fast recovery diode is connected with the fourth ceramic copper-clad plate 14 in an aluminum wire bonding mode to form a low-voltage single-phase rectifying circuit; the surface of the rectifying fast recovery diode is plated with an aluminum layer so as to be beneficial to bonding with an aluminum wire. The aluminum wire connection mode is preferably an ultrasonic bonding mode, and the production efficiency of the module and the product consistency are effectively improved. The front surface of the rectifying fast recovery diode is made of aluminum, the back surface of the rectifying fast recovery diode is made of silver, and the back surface of the rectifying fast recovery diode is connected with the fourth ceramic copper-clad plate 14 through a vacuum welding technology.
Preferably, the ceramic copper-clad plate is preferably of a three-layer structure, wherein the upper layer and the lower layer are made of pure copper materials, the middle layer is made of aluminum oxide ceramics, and non-welding and bonding areas on the same layer of the upper layer are coated with solder resist ink.
The ceramic copper-clad plate is also provided with a plurality of power terminals, and the power terminals are metal power terminals and are led out as power input and power output. The power terminal is preferably made of pure copper materials, weldable nickel is plated on the surface of the power terminal, and a bend is designed above a welding point to buffer the installation stress.
The ceramic copper-clad plate is also provided with a plurality of signal terminals, the signal terminals are preferably metal pins, and are made of pure copper materials, and the surface of the signal terminals is plated with weldable nickel.
Next, after the welding is completed, the housing 2 is continuously mounted, the housing 2 is provided with holes 21 through which the power terminals and the signal terminals extend, and after the mounting of the housing 2 is completed, the power terminals and the signal terminals extend from the holes 21. And the shell 2 is preferably encapsulated with a copper bottom plate by a sealant and filled with an insulating silicone gel.
Finally, a plurality of first grooves 22 for placing the fixing nuts 3 are further arranged on the shell 2, after the shell is installed, the fixing nuts 3 are placed in the first grooves 22, and the shape of the first grooves 22 is fitted with that of the fixing nuts 3 so as to prevent the fixing nuts 3 from rotating in the first grooves 22. One side of each first groove 22 is provided with a hole 21 for the power terminal to extend out, after the fixing nut 3 is placed into the first groove 22, the corresponding power terminal is bent above the first groove 22, at the moment, the through hole of the bent part of the power terminal corresponds to the fixing nut 3 in the first groove 22, and when the power terminal is connected with an external device, a bolt penetrates through the pin of the external device and the through hole of the power terminal and is screwed to the fixing nut 3.
Further, the housing 2 is further provided with a second groove 23 for placing the driving PCB, the signal terminal extends from the hole at the bottom of the second groove 23 and is connected with the driving PCB, and the depth of the second groove 23 is preferably 15 mm.
The shell 2 is preferably made of PBT material, and after the shell 2 is installed, silica gel is used for internal filling so as to achieve sufficient pressure resistance.
In a preferred embodiment of the present invention, the power terminal specifically includes:
the power input terminal 40 is arranged on the first ceramic copper-clad plate 11 and positioned on the left side of each rectifier diode, and the high-power integrated device is externally connected with a three-phase alternating current power supply through the power input terminal 40;
the first output terminal 41 is arranged on the first ceramic copper-clad plate 11 and positioned at the upper right part of the power input terminal 40 to be used as an output end of the first ceramic copper-clad plate 11;
the second output terminal 42 is arranged on the first ceramic copper-clad plate 11 and positioned at the lower right part of the power input terminal 40 to be used as an output end of the first ceramic copper-clad plate 11;
the first input terminal 43 is arranged on the first ceramic copper-clad plate 11 and positioned on the right side of the first output terminal 41 to be used as an input end of the second ceramic copper-clad plate 12;
the second input terminal 44 is arranged on the first ceramic copper-clad plate 11 and positioned on the right side of the second output terminal 41 to serve as an input end of the second ceramic copper-clad plate 12;
the third output terminal 45 is arranged on the third ceramic copper-clad plate 13 and is positioned at the lower left of the third insulated gate bipolar transistor T3 to be used as the output end of the second ceramic copper-clad plate 12 and the third ceramic copper-clad plate 13;
the fourth output terminal 46 is arranged on the third ceramic copper-clad plate 13 and positioned on the right side of the third output terminal 45 to serve as the output end of the second ceramic copper-clad plate 12 and the third ceramic copper-clad plate 13;
the third input terminals 47 are respectively arranged on the second ceramic copper-clad plate 12 and the fourth ceramic copper-clad plate 14, and are positioned at the upper right of the second insulated gate bipolar transistor T2 and above each rectifying fast recovery diode;
a plurality of fourth input terminals 48 which are respectively arranged on the third ceramic copper-clad plate 13 and the fourth ceramic copper-clad plate 14, and are positioned at the right lower part of the fourth insulated gate bipolar transistor T4 and below each rectifying fast recovery diode;
and the fifth output terminals 49 are arranged on the fourth ceramic copper-clad plate 14 and positioned on the right side of each rectifying fast recovery diode to serve as output ends of the high-power integrated device.
In a preferred embodiment of the present invention, the number of the rectifier diodes is six, each rectifier diode is connected with the first ceramic copper-clad plate 11 by an aluminum wire bonding manner to form a three-phase rectifier circuit, and the rectifier diodes specifically include:
a first rectifying diode 51, a cathode of the first rectifying diode 51 being connected to the first output terminal 41, and an anode of the first rectifying diode 51 being connected to an R terminal of the three-phase ac power supply through the power supply input terminal 40;
a second rectifying diode 52, a cathode of the second rectifying diode 52 being connected to the first output terminal 41, and an anode of the second rectifying diode 52 being connected to the S terminal of the three-phase ac power supply through the power input terminal 40;
a third rectifying diode 53, a cathode of the third rectifying diode 53 being connected to the first output terminal 41, and an anode of the third rectifying diode 53 being connected to a T terminal of the three-phase ac power supply through the power supply input terminal 40;
a fourth rectifying diode 54, a cathode of the fourth rectifying diode 54 being connected to the R terminal of the three-phase ac power supply, and an anode of the fourth rectifying diode 54 being connected to the second output terminal 42;
a fifth rectifying diode 55, wherein the cathode of the fifth rectifying diode 55 is connected to the S terminal of the three-phase ac power supply, and the anode of the fifth rectifying diode 55 is connected to the second output terminal 42;
sixth rectifying diode 56, the cathode of sixth rectifying diode 56 is connected to the T terminal of the three-phase ac power supply, and the anode of sixth rectifying diode 56 is connected to second output terminal 42.
In a preferred embodiment of the present invention, the first insulated gate bipolar transistor T1 and the second insulated gate bipolar transistor T2 are connected to the second ceramic copper-clad plate 12 by way of aluminum wire bonding, and the third insulated gate bipolar transistor T3 and the fourth insulated gate bipolar transistor T4 are connected to the third ceramic copper-clad plate 13 by way of aluminum wire bonding to form an H-bridge inverter circuit, which specifically includes:
the collector of the first igbt T1 is connected to the first input terminal 43 and the cathode of the first fast recovery diode D1, respectively, and the emitter of the first igbt T1 is connected to the third output terminal 45 and the anode of the first fast recovery diode D1, respectively;
the collector of the second igbt T2 is connected to the third output terminal 45 and the cathode of the second fast recovery diode D2, respectively, and the emitter of the second igbt T2 is connected to the first input terminal 43 and the anode of the second fast recovery diode D2, respectively.
The collector of the third igbt T3 is connected to the first input terminal 43 and the cathode of the third fast recovery diode D3, respectively, and the emitter of the third igbt T3 is connected to the fourth output terminal 46 and the anode of the third fast recovery diode D3, respectively;
the collector of the fourth igbt T4 is connected to the fourth output terminal 46 and the cathode of the fourth fast recovery diode D4, respectively, and the emitter of the fourth igbt T4 is connected to the first input terminal 43 and the anode of the fourth fast recovery diode D4, respectively.
In a preferred embodiment of the present invention, the number of the rectifying fast recovery diodes is six, each rectifying fast recovery diode is connected with the fourth ceramic copper-clad plate 14 by aluminum wire bonding to form a low-voltage single-phase rectifying circuit, and the rectifying fast recovery diodes specifically include:
a fifth fast recovery diode D5, the anode of the fifth fast recovery diode D5 being connected to the third input terminal 47, and the fifth fast recovery diode D5 being connected to the fifth output terminal 49;
a sixth fast recovery diode D6, the anode of the sixth fast recovery diode D6 being connected to the third input terminal 47, and the sixth fast recovery diode D6 being connected to the fifth output terminal 49;
a seventh fast recovery diode D7, an anode of the seventh fast recovery diode D7 being connected to the third input terminal 47, and the seventh fast recovery diode D7 being connected to the fifth output terminal 49;
an eighth fast recovery diode D8, an anode of the eighth fast recovery diode D8 being connected to the fourth input terminal 48, and an eighth fast recovery diode D8 being connected to the fifth output terminal 49;
a ninth fast recovery diode D9, the anode of the ninth fast recovery diode D9 being connected to the fourth input terminal 48, and the ninth fast recovery diode D9 being connected to the fifth output terminal 49;
the tenth fast recovery diode D10, the anode of the tenth fast recovery diode D10 is connected to the fourth input terminal 48, and the tenth fast recovery diode D10 is connected to the fifth output terminal 49.
Specifically, in the present embodiment, the number of the third input terminals 47 is preferably three, and the three third input terminals are connected to the anode of the fifth fast recovery diode D5, the anode of the sixth fast recovery diode D6, and the anode of the seventh fast recovery diode D7, respectively.
In the present embodiment, the number of the fourth input terminals 48 is preferably three, and is connected to the anode of the eighth fast recovery diode D8, the anode of the ninth fast recovery diode D9, and the anode of the tenth fast recovery diode D10, respectively.
The number of the fifth output terminals 49 is preferably three to satisfy a large current output.
In a preferred embodiment of the present invention, the power terminal includes:
a fixing portion 400 fixed on the substrate 1, wherein a bump 401 is disposed on the fixing portion 400;
the bending portion 402 is hinged to the fixing portion 400 and extends out of the hole 21, and a through hole 403 is formed in the bending portion 402.
Specifically, in this embodiment, after the housing 2 is mounted, the power terminal is effectively prevented from falling off by the mutual engagement between the protrusion 401 and the inner wall of the hole.
In the preferred embodiment of the present invention, each power terminal is connected to an external device through a fixing nut 3, a plurality of first grooves 22 for placing the fixing nuts 3 are disposed on a side of the housing 2 away from the substrate 1, the shape of the first grooves 22 is matched with the shape of the fixing nuts 3, and the bending portion 402 of the power terminal is bent above the first grooves 22 at the hinge point with the fixing portion 400.
In the preferred embodiment of the present invention, the high power integrated device is connected to a driving PCB board through each signal terminal, and the driving PCB board is disposed in a second groove 23 on a side of the housing 2 away from the substrate 1.
In the preferred embodiment of the present invention, the depth of the second groove 23 is 15 mm.
In a preferred embodiment of the present invention, the signal terminal includes:
the first signal terminal 61 is arranged on the second copper-clad ceramic plate 12 and is positioned above the first insulated gate bipolar transistor T1, and the first signal terminal 61 is connected with the gate of the first insulated gate bipolar transistor T1;
the second signal terminal 62 is arranged on the second copper-clad ceramic plate 12 and positioned on the right side of the first signal terminal 61, and the second signal terminal 62 is connected with the emitter of the first insulated gate bipolar transistor T1;
the third signal terminal 63 is arranged on the second copper-clad ceramic plate 12 and positioned on the right side of the second signal terminal 62, and the third signal terminal 63 is connected with the gate of the second insulated gate bipolar transistor T2;
the fourth signal terminal 64 is arranged on the second copper-clad ceramic plate 12 and positioned on the right side of the third signal terminal 63, and the fourth signal terminal 64 is connected with the emitter of the second insulated gate bipolar transistor T2;
the fifth signal terminal 65 is arranged on the third copper-clad ceramic plate 13 and positioned on the right side of the third output terminal 45, and the fifth signal terminal 65 is connected with the gate of the third insulated gate bipolar transistor T3;
a sixth signal terminal 66 disposed on the third copper-clad ceramic plate 13 and located on the right side of the fifth signal terminal 65, wherein the sixth signal terminal 66 is connected to the emitter of the third igbt T3 and the emitter of the fourth igbt T4, respectively;
and the seventh signal terminal 67 is arranged on the third copper-clad ceramic plate 13 and located on the right side of the sixth signal terminal 66, and the seventh signal terminal 67 is connected with the gate of the fourth insulated gate bipolar transistor T4.
Specifically, in this embodiment, the third ceramic copper-clad plate 13 is further provided with two reserved signal terminals, which are disposed on the right side of the fourth fast recovery diode D4, and a temperature detection resistor can be disposed between the two reserved signal terminals according to requirements.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.

Claims (10)

1. The utility model provides a be applied to high-power integrated device of contravariant welding machine which characterized in that specifically includes:
a substrate, on which:
the first ceramic copper-clad plate is welded on the substrate, and a plurality of rectifier diodes are welded on the first ceramic copper-clad plate;
the second ceramic copper-clad plate is welded on the substrate, is positioned on the right side of the first ceramic copper-clad plate and is welded with a first insulated gate bipolar transistor and a second insulated gate bipolar transistor positioned on the right side of the first insulated gate bipolar transistor;
the first insulated gate bipolar transistor is provided with a first fast recovery diode, and the first fast recovery diode is arranged on one side of the first ceramic copper-clad plate close to the second ceramic copper-clad plate;
the second insulated gate bipolar transistor is provided with a second fast recovery diode, and the second fast recovery diode is arranged on one side of the second ceramic copper-clad plate, which is far away from the first ceramic copper-clad plate;
the third ceramic copper-clad plate is welded on the substrate, is positioned below the second ceramic copper-clad plate and is welded with a third insulated gate bipolar transistor and a fourth bipolar transistor positioned on the right side of the third insulated gate bipolar transistor;
the third insulated gate bipolar transistor is provided with a third fast recovery diode, and the third fast recovery diode is arranged on one side of the first ceramic copper-clad plate close to the third ceramic copper-clad plate;
the fourth insulated gate bipolar transistor is provided with a fourth fast recovery diode, and the fourth fast recovery diode is arranged on one side of the third ceramic copper-clad plate, which is far away from the first ceramic copper-clad plate;
the fourth ceramic copper-clad plate is welded on the substrate, is positioned on the right sides of the second ceramic copper-clad plate and the third ceramic copper-clad plate and is welded with a plurality of rectifier fast recovery diodes;
the power terminals are respectively arranged on the first ceramic copper-clad plate, the second ceramic copper-clad plate, the third ceramic copper-clad plate and the fourth ceramic copper-clad plate;
the signal terminals are respectively arranged on the second ceramic copper-clad plate and the third ceramic copper-clad plate; and the shell covers the substrate, and holes for the power terminals and the signal terminals to extend out are formed in the shell.
2. The high power integrated device applied to the inverter welding machine as claimed in claim 1, wherein the power terminal comprises:
the power supply input terminal is arranged on the first ceramic copper-clad plate and positioned on the left side of each rectifier diode, and the high-power integrated device is externally connected with a three-phase alternating current power supply through the power supply input terminal;
the first output terminal is arranged on the first ceramic copper-clad plate and positioned above the right side of the power input terminal to be used as an output end of the first ceramic copper-clad plate;
the second output terminal is arranged on the first ceramic copper-clad plate and positioned at the lower right part of the power input terminal to be used as an output end of the first ceramic copper-clad plate;
the first input terminal is arranged on the first ceramic copper-clad plate and positioned on the right side of the first output terminal to be used as an input end of the second ceramic copper-clad plate;
the second input terminal is arranged on the first ceramic copper-clad plate and positioned on the right side of the second output terminal to be used as an input end of the second ceramic copper-clad plate;
the third output terminal is arranged on the third ceramic copper-clad plate and is positioned at the lower left of the third insulated gate bipolar transistor to be used as the output ends of the second ceramic copper-clad plate and the third ceramic copper-clad plate;
the fourth output terminal is arranged on the third ceramic copper-clad plate and positioned on the right side of the third output terminal to be used as the output ends of the second ceramic copper-clad plate and the third ceramic copper-clad plate;
the plurality of third input terminals are respectively arranged on the second ceramic copper-clad plate and the fourth ceramic copper-clad plate, and are positioned at the upper right part of the second insulated gate bipolar transistor and above each rectifying fast recovery diode;
the plurality of fourth input terminals are respectively arranged on the third ceramic copper-clad plate and the fourth ceramic copper-clad plate, and are positioned at the right lower part of the fourth insulated gate bipolar transistor and below each rectifying fast recovery diode;
and the fifth output terminals are arranged on the fourth ceramic copper-clad plate and positioned on the right side of each fast recovery rectifier diode to serve as output ends of the high-power integrated device.
3. The high-power integrated device applied to the inverter welding machine as claimed in claim 2, wherein the number of the rectifier diodes is six, each rectifier diode is connected with the first ceramic copper-clad plate by means of aluminum wire bonding to form a three-phase rectifier circuit, and the rectifier diodes specifically comprise:
a first rectifying diode having a cathode connected to the first output terminal and an anode connected to an R terminal of the three-phase ac power supply through the power input terminal;
a second rectifying diode having a cathode connected to the first output terminal and an anode connected to the S-terminal of the three-phase ac power supply through the power input terminal;
a third rectifying diode having a cathode connected to the first output terminal and an anode connected to a T-terminal of the three-phase ac power supply through the power input terminal;
a fourth rectifying diode, a cathode of which is connected to the R terminal of the three-phase ac power supply, and an anode of which is connected to the second output terminal;
a fifth rectifying diode, a cathode of which is connected to the S terminal of the three-phase ac power supply, and an anode of which is connected to the second output terminal;
and a cathode of the sixth rectifying diode is connected to the T-terminal of the three-phase ac power supply, and an anode of the sixth rectifying diode is connected to the second output terminal.
4. The high-power integrated device applied to the inverter welding machine according to claim 2, wherein the first insulated gate bipolar transistor and the second insulated gate bipolar transistor are connected with a second ceramic copper-clad plate by means of aluminum wire bonding, and the third insulated gate bipolar transistor and the fourth insulated gate bipolar transistor are connected with a third ceramic copper-clad plate by means of aluminum wire bonding to form an H-bridge inverter circuit, wherein the H-bridge inverter circuit specifically comprises:
a collector of the first insulated gate bipolar transistor is respectively connected with the first input terminal and a cathode of the first fast recovery diode, and an emitter of the first insulated gate bipolar transistor is respectively connected with the third output terminal and an anode of the first fast recovery diode;
and the collector electrode of the second insulated gate bipolar transistor is respectively connected with the third output terminal and the cathode of the second fast recovery diode, and the emitter electrode of the second insulated gate bipolar transistor is respectively connected with the first input terminal and the anode of the second fast recovery diode.
A collector of the third insulated gate bipolar transistor is respectively connected with the first input terminal and a cathode of the third fast recovery diode, and an emitter of the third insulated gate bipolar transistor is respectively connected with the fourth output terminal and an anode of the third fast recovery diode;
and the collector of the fourth insulated gate bipolar transistor is respectively connected with the fourth output terminal and the cathode of the fourth fast recovery diode, and the emitter of the fourth insulated gate bipolar transistor is respectively connected with the first input terminal and the anode of the fourth fast recovery diode.
5. The high-power integrated device applied to the inverter welding machine as claimed in claim 2, wherein the number of the rectifying fast recovery diodes is six, each rectifying fast recovery diode is connected with the fourth ceramic copper-clad plate by means of aluminum wire bonding to form a low-voltage single-phase rectifying circuit, and the rectifying fast recovery diodes specifically comprise:
a fifth fast recovery diode, an anode of the fifth fast recovery diode being connected to the third input terminal, and the fifth fast recovery diode being connected to the fifth output terminal;
a sixth fast recovery diode, an anode of which is connected to the third input terminal, and the sixth fast recovery diode is connected to the fifth output terminal;
a seventh fast recovery diode, an anode of the seventh fast recovery diode being connected to the third input terminal, and the seventh fast recovery diode being connected to the fifth output terminal;
an eighth fast recovery diode, an anode of which is connected to the fourth input terminal, and the eighth fast recovery diode is connected to the fifth output terminal;
a ninth fast recovery diode, an anode of which is connected to the fourth input terminal and the ninth fast recovery diode is connected to the fifth output terminal;
a tenth fast recovery diode having an anode connected to the fourth input terminal and connected to the fifth output terminal.
6. The high power integrated device applied to the inverter welding machine as claimed in claim 1, wherein the power terminal comprises:
the fixing part is fixed on the substrate, and a bump is arranged on the fixing part;
the bending part is hinged to the fixing part and extends out of the hole, and a through hole is formed in the bending part.
7. The high power integrated device applied to the inverter welding machine as claimed in claim 6, wherein each power terminal is connected to an external device through a fixing nut, a plurality of first grooves for placing the fixing nuts are formed in a side of the housing away from the substrate, the shape of the first grooves is matched with the shape of the fixing nuts, and the bent portions of the power terminals are bent above the first grooves at the hinged positions with the fixing portions.
8. The high power integrated device applied to the inverter welding machine as claimed in claim 1, wherein the high power integrated device is connected with a driving PCB board through each signal terminal, and the driving PCB board is placed in a second groove on a side of the housing away from the substrate.
9. The high power integrated device applied to an inverter welding machine as claimed in claim 8, wherein the depth of the second groove is 15 mm.
10. The high power integrated device applied to the inverter welding machine as claimed in claim 1, wherein the signal terminal comprises:
the first signal terminal is arranged on the second copper-clad ceramic plate and is positioned above the first insulated gate bipolar transistor, and the first signal terminal is connected with the grid electrode of the first insulated gate bipolar transistor;
the second signal terminal is arranged on the second copper-clad ceramic plate and is positioned on the right side of the first signal terminal, and the second signal terminal is connected with the emitter of the first insulated gate bipolar transistor;
the third signal terminal is arranged on the second copper-clad ceramic plate and positioned on the right side of the second signal terminal, and the third signal terminal is connected with the grid electrode of the second insulated gate bipolar transistor;
the fourth signal terminal is arranged on the second copper-clad ceramic plate and is positioned on the right side of the third signal terminal, and the fourth signal terminal is connected with an emitter of the second insulated gate bipolar transistor;
the fifth signal terminal is arranged on the third copper-clad ceramic plate and is positioned on the right side of the third output terminal, and the fifth signal terminal is connected with the grid electrode of the third insulated gate bipolar transistor;
the sixth signal terminal is arranged on the third copper-clad ceramic plate and is positioned on the right side of the fifth signal terminal, and the sixth signal terminal is respectively connected with the emitter of the third insulated gate bipolar transistor and the emitter of the fourth insulated gate bipolar transistor;
and the seventh signal terminal is arranged on the third copper-clad ceramic plate and is positioned on the right side of the sixth signal terminal, and the seventh signal terminal is connected with the grid electrode of the fourth insulated gate bipolar transistor.
CN201910854337.1A 2019-09-10 2019-09-10 High-power integrated device applied to inverter welding machine Pending CN110783323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910854337.1A CN110783323A (en) 2019-09-10 2019-09-10 High-power integrated device applied to inverter welding machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910854337.1A CN110783323A (en) 2019-09-10 2019-09-10 High-power integrated device applied to inverter welding machine

Publications (1)

Publication Number Publication Date
CN110783323A true CN110783323A (en) 2020-02-11

Family

ID=69384114

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910854337.1A Pending CN110783323A (en) 2019-09-10 2019-09-10 High-power integrated device applied to inverter welding machine

Country Status (1)

Country Link
CN (1) CN110783323A (en)

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