CN110767132B - Tft电性侦测校正方法、装置、系统及显示装置 - Google Patents

Tft电性侦测校正方法、装置、系统及显示装置 Download PDF

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CN110767132B
CN110767132B CN201911024260.1A CN201911024260A CN110767132B CN 110767132 B CN110767132 B CN 110767132B CN 201911024260 A CN201911024260 A CN 201911024260A CN 110767132 B CN110767132 B CN 110767132B
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compensation
source voltage
tft
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CN110767132A (zh
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付舰航
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/621,677 priority patent/US11011115B1/en
Priority to PCT/CN2019/118410 priority patent/WO2021077495A1/zh
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Abstract

本申请公开了一种TFT电性侦测校正方法、装置、系统及显示装置，该方法包括以下步骤：获取显示设备的各个子像素的栅源电压比；在预设采样时间内侦测各驱动型TFT的输出电压，得到各侦测电压，并根据各驱动型TFT的输入电压和各预设采样时间内的侦测电压，得到各常量K值；根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；根据各补偿因子，依次对相应的补偿子像素的像素电压进行校正，得到校正后的像素电压。本申请能够实现消除因子像素的栅源电压比的差异造成的相应常量K值的误差，从而提升了常量K值侦测的准确性，提高了TFT电学侦测的补偿精度。

Description

TFT电性侦测校正方法、装置、系统及显示装置
技术领域
本申请涉及显示器技术领域，更具体地说，涉及一种TFT电性侦测校正方法、装置、系统及显示装置。
背景技术
随着显示设备的发展，对于显示设备的驱动电路成为了重要的研究热点。对于电流型驱动的显示设备，其发光亮度取决于流过Driving TFT(驱动型薄膜晶体管)的栅源电流。而显示设备的每个子像素的常量K值都存在一定差异，导致输入相同的电压，显示器的亮度不同。其中，K值与TFT(Thin Film Transistor，薄膜晶体管)的参数特性相关。目前，业内通过外部侦测补偿技术补偿常量K值的差异，常量K值侦测的准确性低，补偿误差大。
在实现过程中，发明人发现传统技术中至少存在如下问题：传统的通过外部侦测补偿技术补偿常量K值，常量K值侦测的准确性低，补偿误差大。
发明内容
基于此，有必要针对传统的通过外部侦测补偿技术补偿常量K值，常量K值侦测的准确性低，补偿误差大的问题，提供一种TFT电性侦测校正方法、装置、系统及显示装置。
为了实现上述目的，本发明实施例提供了一种TFT电性侦测校正方法，包括以下步骤：
获取显示设备的各个子像素的栅源电压比；栅源电压比为采样阶段驱动型TFT的栅源电压与感应阶段驱动型TFT的栅源电压的比值；
在预设采样时间内侦测各驱动型TFT的输出电压，得到各侦测电压，并根据各驱动型TFT的输入电压和各预设采样时间内的侦测电压，得到各常量K值；
根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；标准子像素为从各子像素中的任意选取一个得到；补偿子像素为各子像素中除去标准子像素剩余的子像素；
根据各补偿因子，依次对相应的补偿子像素的像素电压进行校正，得到校正后的像素电压。
在其中一个实施例中，在预设采样时间内侦测各驱动型TFT的输出电压，得到各侦测电压的步骤包括：
在所述采样阶段，基于预设采样时间依次对各所述驱动型TFT的输出电压进行采样，得到各所述侦测电压。
在其中一个实施例中，获取显示设备的各个子像素的栅源电压比的步骤包括：
将显示设备的一个子像素为单位，获取各子像素的栅源电压比。
在其中一个实施例中，获取显示设备的各个子像素的栅源电压比的步骤还包括：
将显示设备的预设数量子像素作为像素区域，获取各像素区域的区域栅源电压比；
根据各区域栅源电压比，得到各子像素的栅源电压比；其中，同一像素区域内的各子像素的栅源电压比相同。
在其中一个实施例中，依次对各补偿子像素的常量K值进行校正，得到各补偿因子的步骤中，补偿因子通过以下公式得到：
Figure BDA0002248183800000031
其中，gAi为第i个补偿子像素的补偿因子，i为1,2,3……n(n为整数)；ΔVB为标准子像素的侦测电压；b为标准子像素的栅源电压比；ΔVAi为第i个补偿子像素的侦测电压，i为1,2,3……n(n为整数)；ai为第i个补偿子像素的栅源电压比，i为1,2,3……n(n为整数)。
另一方面，本发明实施例还提供了一种TFT电性侦测校正装置，包括：
栅源电压比获取单元，用于获取显示设备的各个子像素的栅源电压比；栅源电压比为采样阶段驱动型TFT的栅源电压与感应阶段驱动型TFT的栅源电压的比值；
K值获取单元，用于在预设采样时间内侦测各驱动型TFT的输出电压，得到各侦测电压，并根据各驱动型TFT的输入电压和各预设采样时间内的侦测电压，得到各常量K值；
K值补偿单元，用于根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；标准子像素为从各子像素中的任意选取一个得到；补偿子像素为各子像素中除去标准子像素剩余的子像素；
电压补偿单元，用于根据各补偿因子，依次相应的补偿子像素的像素电压进行校正，得到校正后的像素电压。
另一方面，本发明实施例还提供了一种TFT电性侦测校正系统，包括用于连接数据驱动器的处理器；处理器用于执行上述任一项TFT电性侦测校正方法的步骤。
在其中一个实施例中，还包括连接处理器的存储器；
存储器用于存储各子像素的栅源电压比和各常量K值。
另一方面，本发明实施例还提供了一种显示装置，包括数据驱动器、栅极驱动器，显示面板，以及如上述的TFT电性侦测校正系统；
栅极驱动器连接显示面板；显示面板连接数据驱动器；处理器分别连接栅极驱动器和数据驱动器。
在其中一个实施例中，显示面板为电流驱动型显示面板。
上述技术方案中的一个技术方案具有如下优点和有益效果：
上述的TFT电性侦测校正方法的各实施例中，通过获取显示设备的各子像素的栅源电压比，以及侦测得到的各子像素的常量K值；根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；根据各补偿因子，依次相应的补偿子像素的像素电压进行校正，进而得到校正后的像素电压。本申请能够实现消除因子像素的栅源电压比的差异造成的相应常量K值的误差，从而提升了常量K值侦测的准确性，提高了TFT电学侦测的补偿精度，使得显示设备的各个像素亮度相同。
附图说明
下面将结合附图及实施例对本申请作进一步说明，附图中：
图1为一个实施例中TFT电性侦测校正方法的应用环境图；
图2为一个实施例中TFT电性侦测校正方法的第一流程示意图；
图3为一个实施例中3T1C OLED驱动像素电路示意图；
图4为一个实施例中3T1C OLED驱动像素电路的栅源电压信号波形图；
图5为一个实施例中TFT电性侦测校正方法的第二流程示意图；
图6为一个实施例中TFT电性侦测校正装置的方框示意图；
图7为一个实施例中TFT电性侦测校正系统的第一结构示意图；
图8为一个实施例中TFT电性侦测校正系统的第二结构示意图；
图9为一个实施例中显示装置的结构示意图。
具体实施方式
为了对本申请的技术特征、目的和效果有更加清楚的理解，现对照附图详细说明本申请的具体实施方式。
本申请提供的TFT电性侦测校正方法，可以应用于如图1所示的应用环境中。其中，处理器102与显示设备104连接。处理器102可以但不限于是单片机或ARM(Advanced RISCMachine，RISC微处理器)，显示设备104可以用独立的显示设备或者是多个显示设备组成的显示设备组合来实现。其中，显示设备102可以但不限于是OLED(Organic Light-EmittingDiode，有机发光二极管)，Micro-LED(Micro Light-Emitting Diode微发光二极管)或Mini-LED(Mini Light-Emitting Diode小型发光二极管)等显示设备。
在一个实施例中，如图2所示，提供了一种TFT电性侦测校正方法，以该方法应用于图1中的处理器102为例进行说明，包括以下步骤：
步骤S210，获取显示设备的各个子像素的栅源电压比；栅源电压比为采样阶段驱动型TFT的栅源电压与感应阶段驱动型TFT的栅源电压的比值。
其中，显示设备指的是电流驱动型的显示设备；显示设备可以但不限于是OLED显示设备，Micro-LED显示设备或Mini-LED显示设备。显示设备可包括多个子像素，一个子像素对应一个发光点。栅源电压比指的是对应子像素的驱动型TFT(Driving TFT)在采样阶段的栅源电压与感应阶段的栅源电压的比值。驱动型TFT可用于驱动相应的子像素发光。
需要说明的是，采样阶段时，驱动型TFT的栅源电压为保持不变的；感应阶段的栅源电压的比值为曲线上升的。
例如，如图3所示，以3T1C(3T1C指的是3个TFT和1个电容)的OLED驱动像素电路为例。感应阶段(Sense_pre阶段)过程中，扫描型TFT(Scan TFT)导通，感应型TFT(Sense TFT)导通，则驱动型TFT的栅极(G极)输入Vdata，源极(S极)输入Vref，即驱动型TFT的栅源电压为Vgs＝Vdata-Vref。采样阶段(Sample阶段)过程中，扫描型TFT(Scan TFT)关闭，感应型TFT(Sense TFT)导通，Vgs保持不变，在Vgs作用下，电流从VDD经驱动型TFT和感应型TFT对导线寄生电容或者ADC中的电容充电。经过固定时间后通过ADC得到感应线上的电压。
步骤S220，在预设采样时间内侦测各驱动型TFT的输出电压，得到各侦测电压，并根据各驱动型TFT的输入电压和各预设采样时间内的侦测电压，得到各常量K值。
其中，驱动型TFT的输出电压指的是驱动型TFT的源极输出的电压。侦测电压指的是通过ADC(Analog-to-Digital Converter，模数转换器)采样得到的电压。输入电压指的是驱动型TFT的栅极输入的电压。
需要说明的是，常量K值与TFT的特性相关，在一个示例中，驱动型TFT的常量K值为
Figure BDA0002248183800000071
其中，Ci是单位面积绝缘层电容；u是迁移率；W是TFT沟道宽度；L是TFT沟通长度。
例如，如图3所示，在采样阶段，Vgs维持不变，流过驱动型TFT的电流恒定，所以可以通过ADC转换后的电压值得到各个子像素的电流比值，进而得到常量K值的比值。即侦测常量K值时，流过驱动型TFT的电流大小为
Figure BDA0002248183800000072
而此电流对感应线(sense line)的寄生电容以及ADC的电容充电(近似认为所有子像素(sense line)的寄生电容以及ADC电容相等，结合起来以C表示)。那么在采样(sample)阶段，ADC侦测到的电压为
Figure BDA0002248183800000073
其中t是从采样阶段开始到ADC采样的时间，即得到
Figure BDA0002248183800000074
基于上述公式，根据各驱动型TFT的输入电压(Vdata)和各预设采样时间内的侦测电压(ΔV)，进而可得到各常量K值。
步骤S230，根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；标准子像素为从各子像素中的任意选取一个得到；补偿子像素为各子像素中除去标准子像素剩余的子像素。
其中，显示设备中包含多个子像素，可从显示设备中的各个子像素中选取任意一个子像素作为标准子像素，则显示设备中的剩余的子像素作为补偿子像素。标准子像素指的是以该子像素的发光亮度为标准。补偿子像素指的是需根据标准子像素的发光亮度来补偿调整的子像素。
具体地，根据获取到的标准子像素的栅源电压比以及补偿子像素的栅源电压比，在获取到标准子像素的常量K值后，依次对各补偿子像素的常量K值进行校正，进而可得到各补偿因子，实现消除因栅源电压比的差异造成的常量K值的误差。
步骤S240，根据各补偿因子，依次对相应的补偿子像素的像素电压进行校正，得到校正后的像素电压。
其中，像素电压指的是驱动型TFT的栅极输入电压。
具体而言，基于补偿因子，将补偿子像素的像素电压进行校正，进而可补偿常量K值的差异，实现显示设备中各个子像素的发光亮度相同。
上述的TFT电性侦测校正方法，通过获取显示设备的各子像素的栅源电压比，以及侦测得到的各子像素的常量K值；根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；根据各补偿因子，依次相应的补偿子像素的像素电压进行校正，进而得到校正后的像素电压，实现消除因子像素的栅源电压比的差异造成的相应常量K值的误差，从而提升了常量K值侦测的准确性，提高了TFT电学侦测的补偿精度，使得显示设备的各个像素亮度相同。
在一个示例中，如图3所示，以采样3T1C OLED驱动像素电路的显示设备为例进行说明。OLED作为电流驱动器件，其发光亮度取决于流过驱动型TFT(Driving TFT)的电流。而驱动型TFT，在OLED发光阶段工作于饱和区，其电流为：
Figure BDA0002248183800000081
其中，Ci是单位面积绝缘层电容；u是迁移率；W是TFT沟道宽度；L是TFT沟通长度；Vgs是驱动型TFT的栅源电压(G点与S点电位差)；Vth是驱动型TFT的阈值。可表示为下式，其中K为常量K值：
Ids＝K(Vgs-Vth)2
因为每个子像素的Vth和K都存在一定差异，导致输入相同的Vdata，OLED亮度不同。需要说明的是，在本申请中，默认Vth已侦测补偿完成。
下面以两个子像素(A和B)进行说明，传统的侦测K值的方法为：
在Vth补偿之后，侦测常量K值时，流过驱动型TFT的电流大小为
Figure BDA0002248183800000091
那么在采样(sample)阶段，ADC侦测到的电压
Figure BDA0002248183800000092
其中t是从采样阶段开始到ADC采样的时间，即得到
Figure BDA0002248183800000093
进而子像素A和子像素B经过这一侦测过程后，得到ΔVA和ΔVB。
如果以子像素B的KB为标准，根据ΔVA和ΔVB的比值即可得到KA的表达式
Figure BDA0002248183800000094
然而在感应(sense_pre)阶段向子像素中写入Vdata之后，G点和S点之间的电压为Vgs。在采样(sample)阶段，G点和S点之间的电压为V'gs。而Vgs并不等于V'gs(如图4所示)，定义
Figure BDA0002248183800000095
需要说明的是，图4中的Scan指的是扫描线信号。
不同子像素之间的ɑ(即栅源电压比)并不相等，所以写入相同Vgs时，在采样(sample)阶段，不同像素中的V'gs并不相等，导致侦测出的K值存在误差。造成Vgs不等于V'gs的原因有很多，主要有以下三个方面：1、扫描型TFT(Scan TFT)关闭瞬间的电容耦合效应，造成G点电位降低；2、G点存在漏电，造成G点电位降低，不同像素漏电程度不同；3、采样(sample)阶段S点电位有改变，G点电位本应因电容耦合而做出相同的改变。但因为G点除了像素电容C，还有其他电容，而且每个像素不完全相同，导致G点电位变化量不一样。
传统的侦测K值的方法中，因为ɑ的影响，导致侦测到的K值的信息是不准确的。在采样sample阶段，对于子像素A：IA＝KA×(a×Vdata)2；对于子像素B：IB＝KB×(b×Vdata)2。根据电压比值处理，对于子像素B(标准子像素)，实际上是b2KB(而非KB)；对于子像素A(待校正子像素)，实际上是
Figure BDA0002248183800000101
(而非
Figure BDA0002248183800000102
)。导致在补偿K值之后，显示设备亮度仍然存在不均匀，因此传统的通过外部侦测补偿技术补偿常量K值，仍然存在常量K值侦测的准确性低，补偿误差大的问题。
而本申请中，可先获得显示设备中各子像素的栅源电压比(ɑ值)。在侦测得到常量K值之后，根据每一个子像素的ɑ值对K值进行校正，消除因为ɑ值的差异造成的K值的误差，从而提升K值侦测的准确性，改善显示设备亮度均匀性；进而提高了TFT电学侦测的补偿精度，使得显示设备的各个像素亮度相同。
在一个实施例中，如图5所示，提供了一种TFT电性侦测校正方法，以该方法应用于图1中的处理器102为例进行说明，包括以下步骤：
步骤S510，获取显示设备的各个子像素的栅源电压比；栅源电压比为采样阶段驱动型TFT的栅源电压与感应阶段驱动型TFT的栅源电压的比值。
步骤S520，在所述采样阶段，基于预设采样时间依次对各所述驱动型TFT的输出电压进行采样，得到各所述侦测电压。
步骤S530，根据各驱动型TFT的输入电压和各预设采样时间内的侦测电压，得到各常量K值。
步骤S540，根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；标准子像素为从各子像素中的任意选取一个得到；补偿子像素为各子像素中除去标准子像素剩余的子像素；
步骤S550，根据各补偿因子，依次对相应的补偿子像素的像素电压进行校正，得到校正后的像素电压。
其中，上述步骤S510、步骤S530、步骤S540和步骤S550的具体内容过程可参考上文内容，此处不再赘述。
具体而言，通过获取采样阶段各驱动型TFT的栅源电压与感应阶段各驱动型TFT的栅源电压，进而可得到相应子像素的栅源电压比；通过在所述采样阶段，以预设采样时间内依次对各所述驱动型TFT的输出电压进行采样，可得到各所述侦测电压；根据各驱动型TFT的输入电压和各预设采样时间内的侦测电压，进而得到各常量K值；根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；根据各补偿因子，依次相应的补偿子像素的像素电压进行校正，进而得到校正后的像素电压，实现消除因子像素的栅源电压比的差异造成的相应常量K值的误差，从而提升了常量K值侦测的准确性，提高了TFT电学侦测的补偿精度，使得显示设备的各个像素亮度相同。
在一个具体的实施例中，获取显示设备的各个子像素的栅源电压比的步骤包括：
将显示设备的一个子像素为单位，获取各子像素的栅源电压比。
具体而言，将显示设备上的每一个子像素作为一个单位，分别获取每一个子像素的栅源电压比。
在一个具体的实施例中，获取显示设备的各个子像素的栅源电压比的步骤还包括：
将显示设备的预设数量子像素作为像素区域，获取各像素区域的区域栅源电压比；
根据各区域栅源电压比，得到各子像素的栅源电压比；其中，同一像素区域内的各子像素的栅源电压比相同。
具体而言，可根据显示设备的实际情况，以预设数量的子像素作为像素区域，将显示设备划分为特定数目的像素区域，每一个像素区域的子像素相同颜色的栅源电压比相同。进而只需获取每个像素区域中任意一个子像素的栅源电压比，进而能够提高数据处理效率。
需要说明的是，子像素的栅源电压比可以是通过系统像素仿真处理得到；也可以通过实际测量显示设备中相应子像素栅源电压得到，从而能够得到各个区域在当前的栅源电压相等情况下的亮度差异，进而建立补偿子像素与标准子像素之间的对应关系。
在其中一个实施例中，依次对各补偿子像素的常量K值进行校正，得到各补偿因子的步骤中，补偿因子通过以下公式得到：
Figure BDA0002248183800000121
其中，gAi为第i个补偿子像素的补偿因子，i为1,2,3……n(n为整数)；ΔVB为标准子像素的侦测电压；b为标准子像素的栅源电压比；ΔVAi为第i个补偿子像素的侦测电压，i为1,2,3……n(n为整数)；ai为第i个补偿子像素的栅源电压比，i为1,2,3……n(n为整数)。
具体而言，通过先获取显示设备各子像素的栅源电压比(标准子像素为b，补偿子像素为ai)，在侦测得到常量K值之后，根据每一个子像素的栅源电压比对常量K值进行校正，进而得到各补偿因子，消除因为栅源电压比的差异造成的常量K值的误差，改善面板均匀性。在侦测结束后，基于得到补偿因子，对相应的补偿子像素的常量K值进行补偿，进而可提升常量K值侦测的准确性。
进一步的，在显示设备正常显示时，根据各补偿因子，依次对相应的补偿子像素的像素电压进行校正，即V'data＝gA×Vdata(其中，V'data为校正后的像素电压；Vdata为校正前的像素电压)，即可补偿常量K值的差异，提高了TFT电学侦测的补偿精度，使得显示设备的各个像素亮度相同。
应该理解的是，虽然图2和图5的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图2和图5中的至少一部分步骤可以包括多个子步骤或者多个阶段，这些子步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些子步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。
在一个实施例中，如图6所示，还提供了一种TFT电性侦测校正装置，包括：
栅源电压比获取单元610，用于获取显示设备的各个子像素的栅源电压比；栅源电压比为采样阶段驱动型TFT的栅源电压与感应阶段驱动型TFT的栅源电压的比值。
K值获取单元620，用于在预设采样时间内侦测各驱动型TFT的输出电压，得到各侦测电压，并根据各驱动型TFT的输入电压和各预设采样时间内的侦测电压，得到各常量K值。
K值补偿单元630，用于根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；标准子像素为从各子像素中的任意选取一个得到；补偿子像素为各子像素中除去标准子像素剩余的子像素。
电压补偿单元640，用于根据各补偿因子，依次相应的补偿子像素的像素电压进行校正，得到校正后的像素电压。
关于TFT电性侦测校正装置的具体限定可以参见上文中对于TFT电性侦测校正方法的限定，在此不再赘述。上述TFT电性侦测校正装置中的各个模块可全部或部分通过软件、硬件及其组合来实现。上述各模块可以硬件形式内嵌于或独立于TFT电性侦测校正系统中的处理器中，也可以以软件形式存储于TFT电性侦测校正系统中的存储器中，以便于处理器调用执行以上各个模块对应的操作。
在一个实施例中，如图7所示，还提供了一种TFT电性侦测校正系统，包括用于连接数据驱动器的处理器710；处理器710执行计算机程序时实现上述任一项TFT电性侦测校正方法的步骤。
其中，处理器710可以但不限于是单片机或ARM等。数据驱动器可用来转换校正后的像素电压，并根据转换后的像素电压驱动对应的子像素，进而使得相应的子像素产生亮度。
具体地，处理器710可用于执行以下步骤：
获取显示设备的各个子像素的栅源电压比；栅源电压比为采样阶段驱动型TFT的栅源电压与感应阶段驱动型TFT的栅源电压的比值；
在预设采样时间内侦测各驱动型TFT的输出电压，得到各侦测电压，并根据各驱动型TFT的输入电压和各预设采样时间内的侦测电压，得到各常量K值；
根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；标准子像素为从各子像素中的任意选取一个得到；补偿子像素为各子像素中除去标准子像素剩余的子像素；
根据各补偿因子，依次对相应的补偿子像素的像素电压进行校正，得到校正后的像素电压。
在一个具体的实施例中，如图8所示，提供了一种TFT电性侦测校正系统，该系统包括用于连接数据驱动器的处理器810；该系统还包括连接处理器的存储器820；存储器820用于存储各子像素的栅源电压比和各常量K值。
其中，存储器820可以是非易失性和/或易失性存储器。
具体地，存储器820可对每个子像素或者像素区域的栅源电压比进行存储；还可对侦测处理得到的常量K值进行存储。处理器810在进行K值补偿过程时，可通过调用存储器中的栅源电压比和常量K值进行处理。进而在显示设备正常显示时，根据常量K值对相应子像素的像素电压进行补偿，得到补偿之后的像素电压。通过数据驱动器将补偿后的像素电压进行转换处理，并根据转换后的像素电压驱动对应的子像素，实现以相同亮度点亮各个子像素，进而提高了K值侦测的准确度，提升外部补偿的效果。
在一个实施例中，如图9所示，还提供了一种显示装置，包括数据驱动器910、栅极驱动器920，显示面板930，以及如上述的TFT电性侦测校正系统940。
栅极驱动器920连接显示面板930；显示面板930连接数据驱动器910；处理器942分别连接栅极驱动器920和数据驱动器910。
其中，栅极驱动器920可用来驱动TFT的栅极；数据驱动器910可用来转换像素电压，并驱动对应的子像素。显示面板930可包括多个电流驱动型子像素，在一个具体的实施例中，显示面板930为电流驱动型显示面板。例如，显示面板930可以但不限于是OLED显示面板，Micro-LED显示面板和Mini-LED显示面板等。
具体而言，处理器942通过获取显示设备的各子像素的栅源电压比，以及侦测得到的各子像素的常量K值；根据标准子像素的栅源电压比，标准子像素的常量K值和补偿子像素的栅源电压比，依次对各补偿子像素的常量K值进行校正，得到各补偿因子；根据各补偿因子，依次相应的补偿子像素的像素电压进行校正，进而得到校正后的像素电压。处理器942将校正后的像素电压传输给数据驱动器910，进而数据驱动器910转换接收到的像素电压，并驱动对应的子像素；处理器942可还控制栅极驱动器920，通过栅极驱动器920驱动相应TFT的栅极，从而实现以相同亮度点亮各个子像素，消除因子像素的栅源电压比的差异造成的相应常量K值的误差，从而提升了常量K值侦测的准确性，提高了TFT电学侦测的补偿精度。
本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各除法运算方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器(ROM)、可编程ROM(PROM)、电可编程ROM(EPROM)、电可擦除可编程ROM(EEPROM)或闪存。易失性存储器可包括随机存取存储器(RAM)或者外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM(SRAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、双数据率SDRAM(DDRSDRAM)、增强型SDRAM(ESDRAM)、同步链路(Synchlink)DRAM(SLDRAM)、存储器总线(Rambus)直接RAM(RDRAM)、直接存储器总线动态RAM(DRDRAM)、以及存储器总线动态RAM(RDRAM)等。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (10)

1.一种TFT电性侦测校正方法，其特征在于，包括以下步骤：
获取显示设备的各个子像素的栅源电压比；所述栅源电压比为采样阶段驱动型TFT的栅源电压与感应阶段所述驱动型TFT的栅源电压的比值；
在预设采样时间内侦测各所述驱动型TFT的输出电压，得到各侦测电压，并根据各所述驱动型TFT的输入电压和各预设采样时间内的所述侦测电压，得到各常量K值；
根据标准子像素的栅源电压比，所述标准子像素的常量K值和补偿子像素的栅源电压比，依次对各所述补偿子像素的常量K值进行校正，得到各补偿因子；所述标准子像素为从各所述子像素中的任意选取一个得到；所述补偿子像素为各所述子像素中除去所述标准子像素剩余的子像素；
根据各所述补偿因子，依次对相应的所述补偿子像素的像素电压进行校正，得到校正后的像素电压。
2.根据权利要求1所述的TFT电性侦测校正方法，其特征在于，所述在预设采样时间内侦测各所述驱动型TFT的输出电压，得到各侦测电压的步骤包括：
在所述采样阶段，基于预设采样时间依次对各所述驱动型TFT的输出电压进行采样，得到各所述侦测电压。
3.根据权利要求1所述的TFT电性侦测校正方法，其特征在于，所述获取显示设备的各个子像素的栅源电压比的步骤包括：
将所述显示设备的一个子像素为像素单位，获取各所述子像素的栅源电压比。
4.根据权利要求1所述的TFT电性侦测校正方法，其特征在于，所述获取显示设备的各个子像素的栅源电压比的步骤还包括：
将所述显示设备的预设数量子像素作为像素区域，获取各所述像素区域的区域栅源电压比；
根据各所述区域栅源电压比，得到各所述子像素的栅源电压比；其中，同一所述像素区域内的各所述子像素的栅源电压比相同。
5.根据权利要求1所述的TFT电性侦测校正方法，其特征在于，所述依次对各所述补偿子像素的常量K值进行校正，得到各所述补偿因子的步骤中，所述补偿因子通过以下公式得到：
Figure FDA0002809299120000021
其中，gAi为第i个所述补偿子像素的所述补偿因子，i为1,2,3……n(n为整数)；ΔVB为所述标准子像素的侦测电压；b为所述标准子像素的栅源电压比；ΔVAi为第i个所述补偿子像素的侦测电压，i为1,2,3……n(n为整数)；ai为第i个所述补偿子像素的栅源电压比，i为1,2,3……n(n为整数)。
6.一种TFT电性侦测校正装置，其特征在于，包括：
栅源电压比获取单元，用于获取显示设备的各个子像素的栅源电压比；所述栅源电压比为采样阶段驱动型TFT的栅源电压与感应阶段所述驱动型TFT的栅源电压的比值；
K值获取单元，用于在预设采样时间内侦测各所述驱动型TFT的输出电压，得到各侦测电压，并根据各所述驱动型TFT的输入电压和各预设采样时间内的所述侦测电压，得到各常量K值；
K值补偿单元，用于根据标准子像素的栅源电压比，所述标准子像素的常量K值和补偿子像素的栅源电压比，依次对各所述补偿子像素的常量K值进行校正，得到各补偿因子；所述标准子像素为从各所述子像素中的任意选取一个得到；所述补偿子像素为各所述子像素中除去所述标准子像素剩余的子像素；
电压补偿单元，用于根据各所述补偿因子，依次相应的所述补偿子像素的像素电压进行校正，得到校正后的像素电压。
7.一种TFT电性侦测校正系统，其特征在于，包括用于连接数据驱动器的处理器；所述处理器用于权利要求1至5中任一项所述TFT电性侦测校正方法的步骤。
8.根据权利要求7所述的TFT电性侦测校正系统，其特征在于，还包括连接所述处理器的存储器；
所述存储器用于存储各子像素的栅源电压比和各常量K值。
9.一种显示装置，其特征在于，包括数据驱动器、栅极驱动器，显示面板，以及如权利要求7或8所述的TFT电性侦测校正系统；
所述栅极驱动器连接所述显示面板；所述显示面板连接所述数据驱动器；处理器分别连接所述栅极驱动器和所述数据驱动器。
10.根据权利要求9所述的显示装置，其特征在于，所述显示面板为电流驱动型显示面板。
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