CN110760934A - Lithium tantalate wafer blackening device and using method thereof - Google Patents
Lithium tantalate wafer blackening device and using method thereof Download PDFInfo
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- CN110760934A CN110760934A CN201911180646.1A CN201911180646A CN110760934A CN 110760934 A CN110760934 A CN 110760934A CN 201911180646 A CN201911180646 A CN 201911180646A CN 110760934 A CN110760934 A CN 110760934A
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 24
- 235000012431 wafers Nutrition 0.000 claims description 129
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 56
- 239000003638 chemical reducing agent Substances 0.000 claims description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 239000000843 powder Substances 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 9
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 230000003014 reinforcing effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 125000004122 cyclic group Chemical group 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000012360 testing method Methods 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 239000007777 multifunctional material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a lithium tantalate wafer blackening device and a using method thereof. Including the splendid attire pipe to and place at the inside wafer placer of splendid attire pipe, wafer placer includes bottom plate, apron and sets up a plurality of tools between the two, wafer placer places at the splendid attire intraduct through the bottom plate level, the tool is the annular structure and all has seted up logical groove at two terminal surfaces of its annular structure, and a plurality of tools overlap the level and place on the bottom plate, and the logical groove staggered arrangement between adjacent tool, the apron still is provided with the pouring weight near one side of tool, the pouring weight can imbed the tool inner ring with the matching of tool inner ring. The invention improves the blackening uniformity of the lithium tantalate wafer.
Description
Technical Field
The invention relates to the field of wafer processing, in particular to a lithium tantalate wafer blackening device and a using method thereof.
Background
The lithium tantalate wafer is a typical multifunctional material, has good physical properties of piezoelectricity, ferroelectricity, pyroelectricity, acoustooptic, electrooptical, photorefractive, nonlinearity and the like, and is widely applied to the fields of surface acoustic wave devices, optical communication, lasers and photoelectrons. The lithium tantalate wafer has a large piezoelectric coefficient and is therefore suitable for manufacturing a substrate for a low insertion loss surface acoustic wave filter.
Lithium tantalate wafers have a high pyroelectric coefficient, so temperature changes can cause the surfaces of the wafers to generate a large amount of static charges, the static charges can be automatically released among the wafers, particularly among the interdigital electrodes, and the problems of cracking of the lithium tantalate wafers, burning of the interdigital electrodes and the like can occur to a certain extent. Because the lithium tantalate wafer is colorless and transparent, when the photoetching process is carried out, diffuse reflection is generated, so that the line precision of the electrode is reduced. The lithium tantalate wafer is reduced, so that the accumulation of static charges on the surface of the wafer can be effectively avoided, and the pyroelectric effect is obviously reduced. The lithium tantalate wafer after reduction treatment is brown or even black, so that blackening is realized, and the precision of the photoetching process is improved.
At present, the blackening treatment is mainly carried out by embedding a lithium tantalate wafer in powder consisting of a reducing agent, carrying out low-temperature heat treatment and introducing nitrogen to take away reaction products after the blackening reaction, wherein the reducing agent is C, Si, Mg, Al, Fe, lithium carbonate, magnesium carbonate, calcium carbonate and the like, the reducing agent amount around the wafer is different, and the distribution of the nitrogen in a heat treatment furnace can cause the blackening effect and the depolarization condition to have obvious difference, so that the uniformity of the blackening reduction reaction is influenced. The patent CN205662628U adopts a device to place the wafer, which ensures that the periphery of the wafer is in the same reducing agent powder, but the wafer placing rack contacting the wafer will produce non-uniform reaction during the blackening process, resulting in non-uniform blackening of the wafer, and the blackening uniformity is very important in practical application and needs to be improved urgently.
Disclosure of Invention
The invention aims to: the invention provides a lithium tantalate wafer blackening device and a using method thereof, which are used for controlling the blackening uniformity of a lithium tantalate wafer and solving the problem of non-uniformity in the blackening process of the lithium tantalate wafer.
The technical scheme adopted by the invention is as follows:
the invention discloses a lithium tantalate wafer blackening device which comprises a containing pipe and a wafer placing device arranged in the containing pipe, wherein the wafer placing device comprises a bottom plate, a cover plate and a plurality of jigs arranged between the bottom plate and the cover plate, the wafer placing device is horizontally arranged in the containing pipe through the bottom plate, the jigs are of annular structures, through grooves are formed in two end faces of the annular structures of the jigs, the plurality of jigs are horizontally arranged on the bottom plate in an overlapped mode, the through grooves between adjacent jigs are arranged in a staggered mode, a weight block is further arranged on one side, close to the jigs, of the cover plate, and the weight block is matched with the inner rings of the jigs and can be embedded into.
In the prior art, a device for containing a wafer is needed for blackening the wafer, but the part of the device for containing the wafer, which is contacted with the wafer, can generate uneven blackening reaction in the blackening process. The jig is provided with the through grooves, so that gaps are formed between the adjacent jigs, nitrogen can enter the reducing agent in the jig from the through grooves to take away reaction products in the blackening reaction process, and the through grooves between the adjacent jigs are staggered and do not coincide with each other, so that the nitrogen enters the jig through more gaps and is dispersed, and nitrogen can uniformly pass through the lithium tantalate wafers. According to the invention, the weight block is embedded in the inner ring of the uppermost jig, and the cover plate is covered on the weight block to reinforce the powdery reducing agent, so that the thickness and the form of the reducing powder are consistent, the reducing agent powder is prevented from being fluffy and deformed in the blackening reaction process of the lithium tantalate wafer, and the blackening reduction reaction of the lithium tantalate wafer is uniform.
Further, two upper and lower terminal surfaces of tool all are provided with 2 at least logical grooves, and the logical groove one-to-one of tool up end and the logical groove of terminal surface down. By adopting the structure, the through grooves on the upper end surface and the lower end surface of the jig enable the jig and the adjacent jig stacked on the two end surfaces of the jig to have gaps, the jig can be randomly selected to be stacked, and the front side and the back side of the jig when being stacked do not need to be considered.
Furthermore, two end faces of the jig are both of a planar structure. By adopting the structure, the jig and the adjacent jig can be stacked stably.
Further, the bottom plate is a rectangular plane plate. By adopting the structure, the wafer placing devices can be horizontally placed in the containing pipe through the rectangular plane plate, and the adjacent wafer placing devices can be conveniently and compactly arranged and placed in the containing pipe.
Furthermore, the jig is made of stainless steel materials. The stainless steel jig is heat-resistant, corrosion-resistant and long in service life, and is suitable for wafer blackening reaction environments.
Furthermore, the end faces of the two ends of the containing pipe are also provided with heat insulation pads matched with the pipe openings. In the blackening reaction process of the wafer, the lithium tantalate wafer in the containing tube needs to be heated.
Furthermore, the inner wall of the containing pipe is also provided with fins.
Furthermore, the fins are spiral and extend to two ends of the containing tube. By adopting the spiral fins, the heat insulation pad is not contacted with the inner wall of the containing pipe, the inner wall of the containing pipe forms a spiral airflow channel, nitrogen enters the spiral channel inside the containing pipe from the spiral channel through the periphery of the heat insulation pad, the spiral channel surrounds the inner wall of the containing pipe, and the nitrogen entering the containing pipe diffuses from the inner wall of the containing pipe to the center, so that the jig is in a sufficient and uniform nitrogen atmosphere.
A use method of a lithium tantalate wafer blackening device comprises the lithium tantalate wafer blackening device and further comprises the following use steps:
s1, placing a jig on the bottom plate, adding reducing agent powder with a fixed mass ratio into the jig, leveling and compacting;
s2, placing the lithium tantalate wafer on the compacted reducing agent powder in the jig;
s3, adding reducing agent powder with a fixed mass ratio to cover the lithium tantalate wafer, strickling and compacting;
s4, repeating the steps S1-S3, and stacking a plurality of jigs and lithium tantalate wafers on the jigs;
s5, embedding a weight into the inner ring of the uppermost jig, covering a cover plate on the weight, and reinforcing and compacting the reducing agent powder;
s6, placing the whole wafer placing device into a containing tube, filling 2-4L/min nitrogen, carrying out heat treatment at the constant temperature of 480-550 ℃ for 3-10h, and taking out the lithium tantalate wafer after the temperature naturally drops to room temperature.
Further, in step S2, the lithium tantalate wafer is placed at the center of the jig. The distance between the edge of the lithium tantalate wafer and the jig is consistent, so that the same contact gas quantity of each part of the wafer is ensured.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. the invention relates to a blackening device for lithium tantalate wafers, which is characterized in that gaps are formed between adjacent jigs through grooves on the jigs, and the through grooves between the adjacent jigs are arranged in a staggered manner, so that nitrogen enters the jigs to be dispersed, nitrogen is ensured to uniformly pass through among the lithium tantalate wafers, the nitrogen passing rate is ensured, and the lithium tantalate wafers are positioned in the reducing agent powder environment with the same quality, so that the reducing agent powder thickness among the lithium tantalate wafers is ensured to be consistent, the reaction of the lithium tantalate wafers is uniform and sufficient, and the blackening uniformity is ensured.
2. The invention relates to a blackening device for a lithium tantalate wafer.
3. The invention relates to a lithium tantalate wafer blackening device, which is characterized in that spiral fins are arranged on the inner wall of a containing tube, and heat insulation pads matched with tube openings are arranged on the end faces of the two ends of the containing tube, so that a jig is ensured to be in a sufficient and uniform nitrogen atmosphere, nitrogen can be more uniformly distributed in the containing tube, and the blackening uniformity of a lithium tantalate wafer is improved.
4. The invention relates to a using method of a lithium tantalate wafer blackening device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other relevant drawings can be obtained according to the drawings without inventive effort, wherein:
FIG. 1 is a schematic structural diagram of a wafer placement device according to the present invention;
FIG. 2 is a schematic view of the construction of the containment tube of the present invention;
FIG. 3 is a schematic structural view of the end face of the container tube of the present invention;
FIG. 4 is a schematic view of the flow of nitrogen within the containment tube of the present invention;
FIG. 5 is a schematic illustration of a prior art lithium tantalate wafer after blackening;
FIG. 6 is a schematic representation of a lithium tantalate wafer after the invention has been used and blackened.
The reference numbers illustrate: 1-containing tube, 11-fin, 2-wafer placing device, 21-bottom plate, 22-jig, 2201-through groove, 23-cover plate, 24-weight block and 3-heat insulation pad.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations where mutually exclusive features are expressly stated.
The present invention will be described in detail with reference to the accompanying drawings.
Example 1
As shown in fig. 1, 2 and 4, the invention is a lithium tantalate wafer blackening device, comprising a containing tube 1 and a wafer placing device 2 placed inside the containing tube 1, wherein the wafer placing device 2 comprises a bottom plate 21, a cover plate 23 and a plurality of jigs 22 arranged between the bottom plate 21 and the cover plate 23, the wafer placing device 2 is horizontally placed inside the containing tube 1 through the bottom plate 21, the jigs 22 are in an annular structure, through grooves 2201 are respectively formed in two end surfaces of the annular structure, the plurality of jigs 22 are horizontally placed on the bottom plate 21 in an overlapping manner, the through grooves 2201 between the adjacent jigs 22 are arranged in a staggered manner, a weight 24 is further arranged on one side of the cover plate 23 close to the jigs 22, and the weight 24 is matched with the inner rings of the jigs 22 and can be embedded into the inner.
In the prior art, for blackening the lithium tantalate wafer, a device for containing the lithium tantalate wafer is needed, but the part of the device for containing the lithium tantalate wafer, which is contacted with the wafer, can generate uneven blackening reaction in the blackening process, the invention comprises a containing tube 1 and a wafer placing device 2, wherein the containing tube 1 is a container for containing the wafer placing device 2 on a heat treatment furnace, in the embodiment, the containing tube 1 is a circular tube, a plurality of wafers for containing the lithium tantalate wafer and a wafer placing device 2 for embedding reducing agent powder are contained in the containing tube 1, the wafer placing device 2 comprises a bottom plate 21, a cover plate 23 and a plurality of annular-structured jigs 22, in the embodiment, the plurality of jigs 22 are in the same specification, reducing agent powder is paved in the jigs 22 and the lithium tantalate wafer is paved in the same position of the jigs 22, in the embodiment, one lithium tantalate wafer is placed in each jig 22, the plurality of jigs 22 are overlapped together and the peripheries of the lithium tantalate wafers are in the reducing agent powder environment with the same mass, the thickness of the reducing agent is equal among the plurality of lithium tantalate wafers, and the lithium tantalate wafer is not placed on the uppermost jig 22. The jig 22 is provided with the through grooves 2201, so that gaps are formed between the adjacent jigs 22, nitrogen can enter the reducing agent in the jig 22 from the through grooves 2201 to take away reaction products in the blackening reaction process, and the through grooves 2201 between the adjacent jigs are staggered and do not coincide with each other, so that the nitrogen enters more gaps in the jig 22 and is dispersed, and the nitrogen can uniformly pass through the lithium tantalate wafers. According to the invention, the weight block 24 is embedded in the inner ring of the uppermost jig 22, and the cover plate 23 is covered on the weight block 24 to reinforce the powdery reducing agent, so that the thickness and the form of the reducing powder are consistent, the reducing agent powder is prevented from being fluffy and deformed in the blackening reaction process of the lithium tantalate wafer, and the blackening reduction reaction of the lithium tantalate wafer is uniform. The gas passing rate is ensured through the thickness consistency of the reducing agent powder between the lithium tantalate wafers and gaps between the jigs, the reaction of the lithium tantalate wafers is uniform and sufficient, and the blackening uniformity is ensured.
Example 2
This example is a further illustration of the present invention.
As shown in fig. 1, in this embodiment, on the basis of embodiment 1, in a preferred embodiment of the present invention, at least 2 through grooves 2201 are respectively disposed on both the upper end surface and the lower end surface of the jig 22, and the through grooves 2201 on the upper end surface of the jig 22 correspond to the through grooves 2201 on the lower end surface one to one. By adopting the above structure, the through grooves 2201 on the upper and lower end surfaces of the jig 22 enable gaps to be formed between the jig 22 and the adjacent jigs 22 stacked on the two end surfaces of the jig 22, so that the jig 22 can be randomly selected to be stacked without considering the front and back surfaces of the jig 22 when stacked.
Example 3
This example is a further illustration of the present invention.
In this embodiment, on the basis of the above description, in a preferred embodiment of the present invention, both end surfaces of the jig 22 are of a planar structure. By adopting the structure, the jig 22 and the adjacent jig 22 can be stacked stably.
Example 4
This example is a further illustration of the present invention.
In this embodiment, on the basis of the above embodiment, in a preferred embodiment of the present invention, the bottom plate 21 is a rectangular plane plate. By adopting the structure, the wafer placing devices 2 can be conveniently horizontally placed in the containing pipe 1 through the rectangular plane plate, and the adjacent wafer placing devices 2 can be conveniently and compactly arranged and placed in the containing pipe 1.
Example 5
This example is a further illustration of the present invention.
In this embodiment, on the basis of the above embodiment, in a preferred embodiment of the present invention, the jig 22 is made of stainless steel. The stainless steel jig 22 is heat-resistant, corrosion-resistant and long in service life, and is suitable for the blackening reaction environment of the lithium tantalate wafer.
Example 6
This example is a further illustration of the present invention.
In this embodiment, as shown in fig. 2-4, on the basis of the above embodiments, in a preferred embodiment of the present invention, the end surfaces of the two ends of the containing pipe 1 are further provided with heat insulation pads 3 matching with the pipe openings. In the blackening reaction process of the lithium tantalate wafer, the lithium tantalate wafer in the containing tube 1 needs to be heated, and in the invention, the lithium tantalate wafer is subjected to heat treatment at a constant temperature of 480-550 ℃.
In a preferred embodiment of the present invention, the inner wall of the containing tube 1 is further provided with fins 11.
In a preferred embodiment of the present invention, the fins 11 are spiral-shaped and extend to both ends of the container tube 1. By adopting the spiral fins 11, the heat insulation pad 3 is not contacted with the inner wall of the containing pipe 1, a spiral airflow channel is formed on the inner wall of the containing pipe 1, nitrogen enters the spiral channel inside the containing pipe 1 from the spiral channel through the periphery of the heat insulation pad 3, the spiral channel surrounds the inner wall of the containing pipe 1, the nitrogen entering the containing pipe 1 diffuses from the inner wall of the containing pipe 1 to the center, and the jig 22 is ensured to be in a sufficient and uniform nitrogen atmosphere.
In the invention, the flow rate of the nitrogen is 2-4L/min, and the preferred flow rate of the nitrogen is 2.5L/min in the embodiment, so that the uniformity of the contact nitrogen of the blackening reaction of the lithium tantalate wafer is ensured, and the nitrogen cost can be saved.
Example 7
This example is a further illustration of the present invention.
In this embodiment, on the basis of the above embodiment, in a preferred embodiment of the present invention, a method for using a lithium tantalate wafer blackening apparatus includes the above lithium tantalate wafer blackening apparatus, and further includes the following steps:
s1, placing a jig 22 on the bottom plate 21, adding reducing agent powder with a fixed mass ratio into the jig 22, leveling and compacting;
s2, placing the lithium tantalate wafer on the compacted reducing agent powder in the jig 22;
s3, adding reducing agent powder with a fixed mass ratio to cover the lithium tantalate wafer, strickling and compacting;
s4, repeating the steps S1-S3, and stacking a plurality of jigs 22 and lithium tantalate wafers on the jigs 22;
s5, embedding a weight 24 in the inner ring of the uppermost jig 22, covering a cover plate 23 on the weight 24, and reinforcing and compacting the reducing agent powder;
s6, placing the whole wafer placing device 2 into the containing tube 1, filling 3L/min nitrogen, carrying out heat treatment at a constant temperature of 500 ℃ for 7h, and taking out the lithium tantalate wafer after the temperature naturally drops to room temperature.
The nitrogen amount in the embodiment not only ensures the uniformity of the contact nitrogen of the blackening reaction of the lithium tantalate wafer, but also can save the nitrogen cost.
In a preferred embodiment of the present invention, in the step S2, the lithium tantalate wafer is placed at the center of the fixture 22. The distance between the edge of the lithium tantalate wafer and the jig 22 is consistent, so that the same contact gas quantity of each part of the lithium tantalate wafer is ensured.
Example 8
This example is a further illustration of the present invention.
The difference between this example and example 7 is that in step S6, the entire wafer placement device 2 was placed in the holding tube 1, 2L/min of nitrogen gas was charged, heat treatment was performed at a constant temperature of 480 ℃ for 3 hours, and after the temperature naturally decreased to room temperature, the lithium tantalate wafer was taken out.
Example 9
This example is a further illustration of the present invention.
The difference between this example and example 7 is that in step S6, the entire wafer placement device 2 was placed in the holding tube 1, 4L/min of nitrogen gas was charged, heat treatment was performed at a constant temperature of 550 ℃ for 10 hours, and after the temperature naturally decreased to room temperature, the lithium tantalate wafer was taken out.
In the prior art, the uniformity of the blackened lithium tantalate wafer is shown in fig. 5, and the volume resistivity of the test area 1 is: 2 x 10E +14 Ω cm, test zone 2 volume resistivity: 5 × 10E +13 Ω cm, test zone 3 volume resistivity: 9 × 10E +14 Ω cm, test zone 4 volume resistivity: 8 × 10E +13 Ω × cm, test zones 5, 6, 7, 8, 9 volume resistivity: 2 x 10E +12 Ω cm, the degree of blackening was not uniform. By using the apparatus of the present invention and using the apparatus of the present invention according to any one of embodiments 7 to 9, the blackening uniformity of the lithium tantalate wafer after the blackening reduction reaction is shown in fig. 6, and the volume resistivity of the test area 1 to 9: 4E +12 omega cm, and the degree of blackening is uniform.
The above description is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be made by those skilled in the art without inventive work within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope defined by the claims.
Claims (10)
1. The utility model provides a lithium tantalite wafer blackening device, includes splendid attire pipe (1) to and place at inside wafer placer (2) of splendid attire pipe (1), its characterized in that: wafer placer (2) include bottom plate (21), apron (23) and set up a plurality of tool (22) between the two, wafer placer (2) are placed inside splendid attire pipe (1) through bottom plate (21) level, tool (22) are cyclic annular structure and all seted up logical groove (2201) at its cyclic annular structure's two terminal surfaces, and a plurality of tool (22) overlap the level and place on bottom plate (21), and logical groove (2201) staggered arrangement between adjacent tool (22), one side that apron (23) are close to tool (22) still is provided with pouring weight (24), pouring weight (24) and tool (22) inner ring match can imbed tool (22) inner ring.
2. The blackening device for the lithium tantalate wafer according to claim 1, wherein: the upper end face and the lower end face of the jig (22) are provided with at least 2 through grooves (2201), and the through grooves (2201) on the upper end face of the jig (22) correspond to the through grooves (2201) on the lower end face one to one.
3. The blackening device for the lithium tantalate wafer according to claim 1, wherein: the two end faces of the jig (22) are both of a plane structure.
4. The blackening device for the lithium tantalate wafer according to claim 1, wherein: the bottom plate (21) is a rectangular plane plate.
5. The blackening device for the lithium tantalate wafer according to claim 1, wherein: the jig (22) is made of stainless steel materials.
6. The blackening device for the lithium tantalate wafer according to claim 1, wherein: the end faces of the two ends of the containing pipe (1) are also provided with heat insulation pads (3) matched with the pipe openings.
7. The blackening device for the lithium tantalate wafer according to claim 6, wherein: the inner wall of the containing pipe (1) is also provided with fins (11).
8. The blackening device for the lithium tantalate wafer according to claim 7, wherein: the fins (11) are spiral and extend to two ends of the containing pipe (1).
9. A method for using a lithium tantalate wafer blackening device, comprising the lithium tantalate wafer blackening device according to any one of claims 1 to 8, characterized by further comprising the following steps of:
s1, placing a jig (22) on the bottom plate (21), adding reducing agent powder with a fixed mass ratio into the jig (22), leveling and compacting;
s2, placing the lithium tantalate wafer on the compacted reducing agent powder in the jig (22);
s3, adding reducing agent powder with a fixed mass ratio to cover the lithium tantalate wafer, strickling and compacting;
s4, repeating the steps S1-S3, and stacking a plurality of jigs (22) and lithium tantalate wafers on the jigs (22);
s5, embedding a weight (24) in the inner ring of the uppermost jig (22), covering a cover plate (23) on the weight (24), and reinforcing and compacting the reducing agent powder;
s6, placing the whole wafer placing device (2) into the containing tube (1), filling 2-4L/min of nitrogen, carrying out heat treatment at the constant temperature of 480-550 ℃ for 3-10h, and taking out the lithium tantalate wafer after the temperature naturally drops to the room temperature.
10. The use method of the lithium tantalate wafer blackening device according to claim 9, wherein: in the step S2, the lithium tantalate wafer is placed at the center of the jig (22).
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