CN110739336A - fire detection device, manufacturing method, detection system and escape prompting system - Google Patents
fire detection device, manufacturing method, detection system and escape prompting system Download PDFInfo
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- CN110739336A CN110739336A CN201911010225.4A CN201911010225A CN110739336A CN 110739336 A CN110739336 A CN 110739336A CN 201911010225 A CN201911010225 A CN 201911010225A CN 110739336 A CN110739336 A CN 110739336A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
Abstract
The invention discloses fire detection devices, a manufacturing method, a fire detection system and a fire escape prompting system, wherein each fire detection device comprises a substrate, a electroluminescent diode, a second electroluminescent diode, a thin film transistor and an infrared detector, wherein the substrate is arranged on the substrate, the electroluminescent diode is used for responding to the driving light of the thin film transistor, the second electroluminescent diode is used for responding to the driving light of a photo-generated current generated after the infrared detector senses the fire and then emits light, the light emitted by the electroluminescent diode and the light emitted by the second electroluminescent diode form mixed light, the embodiment provided by the invention responds to the sensed fire, combines the mixed light emitted by the electroluminescent diode and the second electroluminescent diode and realizes an infrared alarm function according to the brightness or color of the presented light, and the application prospect of the is wide.
Description
Technical Field
The invention relates to the technical field of display, in particular to fire detection devices, a manufacturing method, a fire detection system and a fire escape prompting system.
Background
Since the Organic Light Emitting Diode (OLED) has the advantages of low power consumption, light weight, thin thickness, foldability and the like, is widely applied to various fields in the field of fire monitoring, how to detect fire by adopting the OLED according to the characteristics of the fire becomes a problem to be solved by research and development personnel.
Disclosure of Invention
In order to solve at least of the above problems, the invention provides in a fire detector, comprising a substrate, a th electroluminescent diode, a second electroluminescent diode, a thin film transistor, and an infrared detector, provided on the substrate, wherein,
the th electroluminescent diode emits light in response to the driving of the thin film transistor;
the second electroluminescent diode responds to the driving luminescence of the photo-generated current generated after the infrared detector senses the fire;
the th electroluminescent diode emitting light and the second electroluminescent diode emitting light form mixed light.
, the infrared detector comprises a th electrode, a second electrode and an infrared photodiode between the th electrode and the second electrode, wherein at least of the th electrode and the second electrode are made of temperature-controlled phase-change materials, a metal conductor is formed in response to an external temperature, and a photo-generated current is generated according to infrared light sensed by the infrared photodiode.
, the th electrode and the second electrode are the same or different temperature control phase change materials.
, the th and second electrodes are vanadium dioxide.
, the TFT is turned on in response to the photo-generated current to drive the electroluminescent diode to emit light.
, the orthographic projection of the electroluminescent diode on the substrate covers the orthographic projection of the second electroluminescent diode on the substrate;
or
An orthographic projection of the th electroluminescent diode on the substrate does not overlap with an orthographic projection of the second electroluminescent diode on the substrate.
, in case that the orthographic projection of the th electroluminescent diode on the substrate covers the orthographic projection of the second electroluminescent diode on the substrate, the fire detection device comprises:
a substrate;
a thin film transistor and an infrared detector formed on the substrate, wherein an orthographic projection of the thin film transistor on the substrate and an orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises an th electrode, an infrared photodiode and a second electrode;
a second electroluminescent diode formed on the th electrode of the infrared detector, the second electroluminescent diode including a second anode, a second light emitting layer, and a second cathode, the second anode being electrically connected to the th electrode;
an interlayer insulating layer formed on the second cathode;
an th electroluminescent diode formed on the interlayer insulating layer, the th electroluminescent diode including a th anode, a th light-emitting layer and a th cathode, the th anode being electrically connected to a source or a drain of the thin film transistor;
or
In the case that the orthographic projection of the th electroluminescent diode on the substrate does not overlap with the orthographic projection of the second electroluminescent diode on the substrate, the fire detection device comprises:
a substrate;
a thin film transistor and an infrared detector formed on the substrate, wherein an orthographic projection of the thin film transistor on the substrate and an orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises an th electrode, an infrared photodiode and a second electrode;
an interlayer insulating layer covering the thin film transistor and the infrared detector;
an th electroluminescent diode formed on the interlayer insulating layer, the th electroluminescent diode including a th anode, a th luminescent layer and a th cathode, the th anode being electrically connected to a source or a drain of the thin film transistor through a via;
the second electroluminescent diode is formed on the interlayer insulating layer and comprises a second anode, a second luminescent layer and a second cathode, the second anode is electrically connected with the th electrode of the infrared detector through a through hole, the th anode and the second anode are arranged in the same layer, the th luminescent layer and the second luminescent layer are arranged in the same layer, and the th cathode and the second cathode are arranged in the same layer.
A second aspect of the present invention provides fire detection systems, comprising
, the fire detection device of claim;
a photoelectric converter and a communication device, the th photoelectric converter converting the mixed light into a th electrical signal, the communication device sending an alarm signal in response to the th electrical signal;
and/or
The second photoelectric converter converts the mixed light into a second electrical signal, and the audio alarm responds to the second electrical signal to form a corresponding audio alarm.
In a third aspect of the present invention, there are provided fire escape prompting systems, comprising a plurality of fire detection devices of the aspect or the fire detection system of the second aspect, wherein the fire detection devices or the fire detection systems are disposed at different locations in a building.
The fourth aspect of the present invention provides a method for manufacturing fire detection devices, comprising:
forming a thin film transistor and an infrared detector on the substrate, wherein the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises an th electrode, an infrared photodiode and a second electrode;
forming a second electroluminescent diode on the th electrode of the infrared detector, the second electroluminescent diode including a second anode, a second light-emitting layer, and a second cathode, the second anode being electrically connected to the th electrode;
forming an interlayer insulating layer on the second cathode;
forming electroluminescent diode on the interlayer insulating layer, wherein the electroluminescent diode comprises a th anode, a th luminescent layer and a th cathode, and the th anode is electrically connected with a source or a drain of the thin film transistor;
or
Forming a thin film transistor and an infrared detector on the substrate, wherein the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises an th electrode, an infrared photodiode and a second electrode;
forming an interlayer insulating layer covering the thin film transistor and the infrared detector;
an th anode and a second anode which are arranged on the same layer and formed on the interlayer insulating layer, wherein the th anode is electrically connected with a source electrode or a drain electrode of the thin film transistor through a through hole, and the second anode is electrically connected with a th electrode of the infrared detector through a through hole;
forming a pixel defining layer on the interlayer insulating layer where the th anode and the second anode are formed;
a light-emitting layer and a second light-emitting layer defined by the pixel defining layer and formed on the th anode and the second anode, respectively, the light-emitting layer and the second light-emitting layer being disposed in the same layer;
and forming a cathode covering the th light-emitting layer, the second light-emitting layer and the pixel defining layer.
The invention has the following beneficial effects:
aiming at the existing problems, the invention provides fire detection devices, a manufacturing method, a fire detection system and a fire escape prompting system, wherein a thin film transistor drives a electroluminescent diode to emit light, an infrared detector senses the fire to drive a second electroluminescent diode to emit light, the infrared alarm function is realized by combining the light emitted by a electroluminescent diode and the light emitted by the second electroluminescent diode according to the brightness or color of the presented light, when a electrode and a second electrode of the infrared detector adopt temperature control phase change materials, the infrared photodiode of the infrared detector senses infrared light to drive the second electroluminescent diode to emit light, the luminous efficiency of the fire detection device is effectively improved in the aspect of , in addition, the infrared light is actively sensed to realize the reutilization of heat energy generated by a traditional device in the aspect of , and the invention has an application prospect of .
Drawings
The following detailed description describes embodiments of the present invention in conjunction with the accompanying drawings.
FIG. 1 is a schematic diagram of a fire detection device according to embodiments of the present invention;
FIG. 2 is a schematic structural diagram of another exemplary embodiments of the fire detection device of the present invention;
FIG. 3 is a flow chart illustrating a method of making fire detection devices according to an embodiment of the invention;
FIG. 4 is a flow chart illustrating a method of making a fire detection device according to another embodiments of the present invention;
FIG. 5 is a block diagram of a fire detection system according to embodiments of the invention;
fig. 6 is a schematic view illustrating a scene of fire escape prompt according to embodiments of the present invention.
Detailed Description
For purposes of illustrating the invention more clearly, the invention is described in further with reference to the preferred embodiment and the drawings wherein like reference numerals are used to indicate similar parts.
As shown in FIG. 1, embodiments of the present invention provide fire detection devices, which include a substrate, a th electroluminescent diode, a second electroluminescent diode, a thin film transistor and an infrared detector, wherein the th electroluminescent diode emits light in response to driving of the thin film transistor, the second electroluminescent diode emits light in response to driving of a photo-generated current generated after the infrared detector senses a fire, and light emitted from the th electroluminescent diode and light emitted from the second electroluminescent diode form mixed light.
In this embodiment, as shown in fig. 1, the th electroluminescent diode 17 is driven by the thin film transistor 11 to emit light, the thin film transistor 11 turns on the source and the drain in response to the gate signal to drive the th electroluminescent diode to emit light, that is, the th electroluminescent diode is driven by the thin film transistor to emit light in response to the driving of the thin film transistor, the second electroluminescent diode 15 is driven by the infrared detector 12 to emit light, and when the infrared detector 12 senses infrared light, a photo-generated current is generated to drive the second electroluminescent diode to emit light, that is, the second electroluminescent diode is driven to emit light in response to the photo-generated current generated after the infrared detector senses a fire, in practical applications, when a fire occurs, a flame generates infrared light, the infrared detector 12 in the fire detection apparatus senses infrared light of the fire and generates a photo-generated current to drive the second electroluminescent diode 15 to emit light, and at the same time, the th electroluminescent diode is driven by the thin film transistor to emit light, the fire detection apparatus presents a mixed light brightness and a penetration of the mixed light of the and the second electroluminescent diode, so that a fire is not capable of sensing a fire, and capable of detecting a fire, and capable of being set by a fire, for example, and capable of being capable of detecting a fire, and capable of being set under a fire, and capable of detecting a fire, and capable of being capable of detecting a fire, and capable of detecting a fire according to detect a fire, and.
In view of the power consumption of the fire detection device, in alternative embodiments, the thin film transistor is turned on in response to the photo-generated current to drive the th electroluminescent diode to emit light.
In this embodiment, the gate of the thin film transistor is electrically connected to the infrared detector through a via hole, and when the infrared detector senses a fire and generates a photo-generated current, the thin film transistor is turned on to drive the th electroluminescent diode to emit light, so that the th electroluminescent diode and the second electroluminescent diode are controlled to emit light in a linkage manner through the infrared detector when the fire occurs.
It should be noted that this embodiment is only used for illustrating a specific embodiment, and the embodiment is not limited, and a person skilled in the art should set the control manner of the infrared detector and the thin film transistor according to the actual application requirement, which is not described herein again.
Considering that a large amount of infrared light exists in real life, sensing a fire only based on the infrared light easily causes a false alarm, and thus, according to other characteristics exhibited by the fire, in alternative embodiments, the infrared detector includes a th electrode, a second electrode, and an infrared photodiode between the th electrode and the second electrode, at least of the th electrode and the second electrode are temperature-controlled phase-change materials, a metal conductor is formed in response to an external temperature, and a photo-generated current is generated based on the infrared light sensed by the infrared photodiode.
In specific examples, as shown in fig. 1, the fire detection device includes a substrate 10, a thin film transistor 11 and an infrared detector 12 formed on the substrate 10, an orthographic projection of the thin film transistor on the substrate and an orthographic projection of the infrared detector on the substrate do not overlap, the thin film transistor 11 includes a gate electrode, an active layer, a source electrode 111 and a drain electrode 112, the source electrode 111 and the drain electrode 112 are electrically connected to the active layer through a via hole penetrating a gate insulating layer 13, the infrared detector 12 is located on a side of the thin film transistor 11 and includes a th electrode 121, an infrared photodiode 122 and a second electrode 123, a second electroluminescent diode 15 formed on an electrode 121 of a 631 th electrode of the infrared detector 12, the second electroluminescent diode 15 is located in an area surrounded by the pixel defining layer 14 and includes a second anode 153, a second light emitting layer 152 and a second cathode 63151, the second anode 153 is electrically connected to the 8652 th electrode 121, an interlayer insulating layer 16 formed on the second cathode 151, an interlayer insulating layer 16 formed on the interlayer insulating layer 151 and includes a cathode , an anode 4614, an anode 4623 is electrically connected to the pixel 4614 and an anode is electrically connected to the pixel 35, the pixel 35 is located in an anode 6321 and the pixel defining area including a cathode 4614 and the anode 4614 and the pixel 123.
In this embodiment, the infrared photodiode of the infrared detector is used for sensing infrared light in a fire, the th electrode and the second electrode of the infrared detector are made of temperature-controlled phase change materials, the temperature-controlled phase change materials can realize phase change according to the temperature rising in the fire, the th phase is changed into another th phase, and chemical compositions before and after the phase change are not changed.
It should be noted that the above embodiments are only used to illustrate specific embodiments of the present application, wherein at least of the electrode and the second electrode of the infrared detector are made of a temperature-controlled phase-change material, that is, the electrode or the second electrode is made of a temperature-controlled phase-change material, or the electrode and the second electrode are made of a temperature-controlled phase-change material, for example, the electrode or the second electrode is made of a temperature-controlled phase-change material, and when the temperature rises to reach the phase-change temperature of the electrode or the second electrode, the electrode or the second electrode is converted into a conductor and connected to a loaded power supply voltage, so that the electrode or the second electrode and the corresponding second electrode or the electrode form an internal electric field to control the transfer of carriers generated by the infrared photodiode, thereby generating photons to emit light.
In optional embodiments, the electrode and the second electrode are made of the same or different temperature-controlled phase-change materials, that is, when the electrode and the second electrode are made of the temperature-controlled phase-change materials, the electrode and the second electrode may be made of different temperature-controlled phase-change materials, for example, two temperature-controlled phase-change materials with different phase-change temperatures, or may be made of the same temperature-controlled phase-change material, in this embodiment, the electrode and the second electrode are made of vanadium dioxide, and when the temperature reaches the phase-change temperature of 68 °, the vanadium dioxide is converted from an insulator to a conductor, and the infrared detector senses infrared light, so that a fire can be accurately identified, and the infrared detector drives the second electroluminescent diode to emit light.
In the above embodiment, the orthographic projection of the th electroluminescent diode on the substrate covers the orthographic projection of the second electroluminescent diode on the substrate, that is, the th electroluminescent diode is superposed on the second electroluminescent diode, the infrared detector drives the second electroluminescent diode to emit light when a fire occurs, and the light is superposed on the th electroluminescent diode, so that the brightness and the penetrating power of mixed light are presented to realize fire sensing and alarm prompting.
In view of the manufacturing process steps of the fire detection device, in alternative embodiments, as shown in fig. 2, the fire detection device includes a substrate 10, a thin film transistor 11 and an infrared detector 12 formed on the substrate 10, an orthographic projection of the thin film transistor 11 on the substrate 10 and an orthographic projection of the infrared detector 12 on the substrate 10 do not overlap, the infrared detector 12 is located on a side of the thin film transistor 11, the infrared detector 12 includes a 0 electrode 121, an infrared photodiode 122 and a second electrode 123, an interlayer insulating layer 16 covering the thin film transistor 11 and the infrared detector 12, a 1 electroluminescent diode 17 formed on the interlayer insulating layer 16, the electroluminescent diode 17 includes a rd anode 173, a luminescent layer 172 and a th cathode 171, the th anode 173 is electrically connected to a source or drain of the thin film transistor 11 through a via hole penetrating through the interlayer insulating layer 16, a second electroluminescent diode 15 formed on the interlayer insulating layer 16, the second electroluminescent diode 153 is electrically connected to the anode 102 through the second electroluminescent diode 632, and the second electroluminescent diode 151 is electrically connected to the anode 121, the second electroluminescent diode 153 and the anode 35 and the anode 123, the anode 9 is electrically connected to the anode 9 through the second electroluminescent diode , the second electroluminescent diode 152 and the anode 9, the anode 9 is electrically connected to the anode 9.
In this embodiment, the anode of the th electroluminescent diode and the second anode, the th luminescent layer and the second luminescent layer of the second electroluminescent diode, as well as the cathode and the second cathode, which are arranged in the same layer, effectively reduce the steps of the manufacturing process of the fire detection device.
Corresponding to the fire detection devices provided in the above embodiments, embodiments of the present application further provide methods for manufacturing the fire detection devices, and since the methods provided in the embodiments of the present application correspond to the fire detection devices provided in the above embodiments, the foregoing embodiments are also applicable to the methods provided in the embodiments, and detailed description is omitted in this embodiment.
As shown in FIG. 3, embodiments of the present application further provide a method for manufacturing fire detection devices, including forming a thin film transistor and an infrared detector on the substrate, where an orthographic projection of the thin film transistor on the substrate and an orthographic projection of the infrared detector on the substrate do not overlap, where the infrared detector includes a 0 th electrode, an infrared photodiode, and a second electrode, forming a second electroluminescent diode on a th electrode of the infrared detector, where the second electroluminescent diode includes a second anode, a second luminescent layer, and a second cathode, where the second anode is electrically connected to the th electrode, forming an interlayer insulating layer on the second cathode, forming a th electroluminescent diode on the interlayer insulating layer, where the th electroluminescent diode includes a th anode, a th luminescent layer, and an th cathode, and the th anode is electrically connected to a source or a drain of the thin film transistor.
In view of reducing the manufacturing process steps of the fire detection device, as shown in fig. 4, embodiments of the present application further provide a method of manufacturing fire detection devices, including forming a thin film transistor and an infrared detector on the substrate, the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate do not overlap, the infrared detector being located on the side of the thin film transistor and including a th electrode, an infrared photodiode, and a second electrode, forming an interlayer insulating layer covering the thin film transistor and the infrared detector, forming a th anode and a second anode disposed in the same layer on the interlayer insulating layer, the th anode being electrically connected to a source or drain of the thin film transistor through a via hole, the second anode being electrically connected to a electrode of the infrared detector through a via hole, forming a pixel defining layer on the interlayer insulating layer where the th anode and the second anode are formed, forming a pixel defining layer on the first anode 5 and the second anode, the second light emitting layer defined by the pixel 38735 and the second light emitting layer, and the cathode 466 and the light emitting layer covering the light emitting layer.
Based on the above fire detection device, as shown in fig. 5, embodiments of the present application further provide fire detection systems, which include the above fire detection device, a th photoelectric converter and a communication device, wherein the th photoelectric converter converts the mixed light into a th electrical signal, and the communication device sends an alarm signal in response to the th electrical signal.
In this embodiment, when a fire occurs, the flame generates infrared light, the infrared detector of the fire detection device senses the infrared light of the fire and generates a photo-generated current to drive the second electroluminescent diode to emit light, and then the infrared alarm displays the luminance and the penetrating power of light superimposed by the th electroluminescent diode and the second electroluminescent diode, and then converts the mixed light into the th electrical signal through the photoelectric converter and transmits the electrical signal through a communication device, for example, a remote monitoring room, so as to alarm and monitor the fire.
In another embodiments, the device further comprises a second photoelectric converter that converts the mixed light into a second electrical signal and an audio alarm that generates a corresponding audio alarm in response to the second electrical signal.
In this embodiment, the fire detection system converts the mixed light into a second electrical signal through a second photoelectric converter, and then implements an audio alarm through an audio alarm according to the second electrical signal, so as to facilitate steps of alarm reminding.
Based on above-mentioned fire detection device and fire detection system, the embodiments of this application still provide kinds of fire escape prompt system who utilizes above-mentioned fire detection device or fire detection system, as shown in fig. 6, including a plurality of fire detection device or a plurality of fire detection system, wherein fire detection device or fire detection system set up the position that differs in the building.
Fig. 6 is a fire evacuation plan view of a warehouse, in this embodiment, a plurality of fire detection devices or a plurality of fire detection systems 100 are disposed in the warehouse, and when a fire occurs, the fire detection devices sense the fire according to the positions and light the th and second electroluminescent diodes at the fire location, so that when the worker escapes from the smoke, the worker can immediately know the fire occurrence location according to the lighted fire detection devices, and can quickly select the route of the unlit fire detection device to escape, thereby realizing the fire escape prompt.
Aiming at the existing problems, the invention provides fire detection devices, a manufacturing method, a fire detection system and a fire escape prompting system, wherein a thin film transistor drives a electroluminescent diode to emit light, an infrared detector senses the fire to drive a second electroluminescent diode to emit light, the infrared alarm function is realized by combining the light emitted by a electroluminescent diode and the light emitted by the second electroluminescent diode according to the brightness or color of the presented light, when a electrode and a second electrode of the infrared detector adopt temperature control phase change materials, the infrared photodiode of the infrared detector senses infrared light to drive the second electroluminescent diode to emit light, the luminous efficiency of the fire detection device is effectively improved in the aspect of , in addition, the infrared light is actively sensed to realize the reutilization of heat energy generated by a traditional device in the aspect of , and the invention has an application prospect of .
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it will be obvious to those skilled in the art that other variations or modifications may be made on the basis of the above description, and all embodiments may not be exhaustive, and all obvious variations or modifications may be included within the scope of the present invention.
Claims (10)
- The fire detection device of 1, , comprising a substrate, a electroluminescent diode, a second electroluminescent diode, a thin film transistor and an infrared detector arranged on the substrate, wherein,the th electroluminescent diode emits light in response to the driving of the thin film transistor;the second electroluminescent diode responds to the driving luminescence of the photo-generated current generated after the infrared detector senses the fire;the th electroluminescent diode emitting light and the second electroluminescent diode emitting light form mixed light.
- 2. The fire detection device of claim 1, wherein the infrared detector comprises an th electrode, a second electrode, and an infrared photodiode between the th and second electrodes, at least of the th and second electrodes being a temperature-controlled phase change material, forming a metal conductor in response to an external temperature and generating a photo-generated current from infrared light sensed by the infrared photodiode.
- 3. The fire detection device of claim 2, wherein the th electrode and the second electrode are the same or different temperature controlled phase change materials.
- 4. The fire detection device of claim 2, wherein the th and second electrodes are vanadium dioxide.
- 5. The fire detection device of claim 1,the thin film transistor is turned on in response to the photo-generated current, thereby driving the th electroluminescent diode to emit light.
- 6. The fire detection device of any of claims 1-5,an orthographic projection of the th electroluminescent diode on the substrate covers an orthographic projection of the second electroluminescent diode on the substrate;orAn orthographic projection of the th electroluminescent diode on the substrate does not overlap with an orthographic projection of the second electroluminescent diode on the substrate.
- 7. The fire detection device of claim 6,in the case where the orthographic projection of the th electroluminescent diode on the substrate covers the orthographic projection of the second electroluminescent diode on the substrate, the fire detection device comprises:a substrate;a thin film transistor and an infrared detector formed on the substrate, wherein an orthographic projection of the thin film transistor on the substrate and an orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises an th electrode, an infrared photodiode and a second electrode;a second electroluminescent diode formed on the th electrode of the infrared detector, the second electroluminescent diode including a second anode, a second light emitting layer, and a second cathode, the second anode being electrically connected to the th electrode;an interlayer insulating layer formed on the second cathode;an th electroluminescent diode formed on the interlayer insulating layer, the th electroluminescent diode including a th anode, a th light-emitting layer and a th cathode, the th anode being electrically connected to a source or a drain of the thin film transistor;orIn the case that the orthographic projection of the th electroluminescent diode on the substrate does not overlap with the orthographic projection of the second electroluminescent diode on the substrate, the fire detection device comprises:a substrate;a thin film transistor and an infrared detector formed on the substrate, wherein an orthographic projection of the thin film transistor on the substrate and an orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises an th electrode, an infrared photodiode and a second electrode;an interlayer insulating layer covering the thin film transistor and the infrared detector;an th electroluminescent diode formed on the interlayer insulating layer, the th electroluminescent diode including a th anode, a th luminescent layer and a th cathode, the th anode being electrically connected to a source or a drain of the thin film transistor through a via;the second electroluminescent diode is formed on the interlayer insulating layer and comprises a second anode, a second luminescent layer and a second cathode, the second anode is electrically connected with the th electrode of the infrared detector through a through hole, the th anode and the second anode are arranged in the same layer, the th luminescent layer and the second luminescent layer are arranged in the same layer, and the th cathode and the second cathode are arranged in the same layer.
- 8, fire detection systems, characterized by that, includeThe fire detection device of any of claims 1-7;a photoelectric converter and a communication device, the th photoelectric converter converting the mixed light into a th electrical signal, the communication device sending an alarm signal in response to the th electrical signal;and/orThe second photoelectric converter converts the mixed light into a second electrical signal, and the audio alarm responds to the second electrical signal to form a corresponding audio alarm.
- A fire escape prompting system of , comprising a plurality of fire detection devices of of claims 1-7 or fire detection systems of claim 8, wherein the fire detection devices or fire detection systems are disposed at different locations in a building.
- 10, method for making a fire detection device, comprising:forming a thin film transistor and an infrared detector on the substrate, wherein the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises an th electrode, an infrared photodiode and a second electrode;forming a second electroluminescent diode on the th electrode of the infrared detector, the second electroluminescent diode including a second anode, a second light-emitting layer, and a second cathode, the second anode being electrically connected to the th electrode;forming an interlayer insulating layer on the second cathode;forming electroluminescent diode on the interlayer insulating layer, wherein the electroluminescent diode comprises a th anode, a th luminescent layer and a th cathode, and the th anode is electrically connected with a source or a drain of the thin film transistor;orForming a thin film transistor and an infrared detector on the substrate, wherein the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises an th electrode, an infrared photodiode and a second electrode;forming an interlayer insulating layer covering the thin film transistor and the infrared detector;an th anode and a second anode which are arranged on the same layer and formed on the interlayer insulating layer, wherein the th anode is electrically connected with a source electrode or a drain electrode of the thin film transistor through a through hole, and the second anode is electrically connected with a th electrode of the infrared detector through a through hole;forming a pixel defining layer on the interlayer insulating layer where the th anode and the second anode are formed;a light-emitting layer and a second light-emitting layer defined by the pixel defining layer and formed on the th anode and the second anode, respectively, the light-emitting layer and the second light-emitting layer being disposed in the same layer;and forming a cathode covering the th light-emitting layer, the second light-emitting layer and the pixel defining layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911010225.4A CN110739336B (en) | 2019-10-23 | 2019-10-23 | Fire detection device, manufacturing method, detection system and escape prompting system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911010225.4A CN110739336B (en) | 2019-10-23 | 2019-10-23 | Fire detection device, manufacturing method, detection system and escape prompting system |
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| CN110739336A true CN110739336A (en) | 2020-01-31 |
| CN110739336B CN110739336B (en) | 2021-10-29 |
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| CN201911010225.4A Active CN110739336B (en) | 2019-10-23 | 2019-10-23 | Fire detection device, manufacturing method, detection system and escape prompting system |
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| CN110739336B (en) | 2021-10-29 |
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