CN110739336B - Fire detection device, manufacturing method, detection system and escape prompting system - Google Patents
Fire detection device, manufacturing method, detection system and escape prompting system Download PDFInfo
- Publication number
- CN110739336B CN110739336B CN201911010225.4A CN201911010225A CN110739336B CN 110739336 B CN110739336 B CN 110739336B CN 201911010225 A CN201911010225 A CN 201911010225A CN 110739336 B CN110739336 B CN 110739336B
- Authority
- CN
- China
- Prior art keywords
- electroluminescent diode
- infrared detector
- electrode
- substrate
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a fire detection device and a manufacturing method thereof, a fire detection system and a fire escape prompting system, wherein the fire detection device comprises: the infrared detector comprises a substrate, a first electroluminescent diode, a second electroluminescent diode, a thin film transistor and an infrared detector, wherein the first electroluminescent diode emits light in response to the driving of the thin film transistor; the second electroluminescent diode responds to the driving luminescence of the photo-generated current generated after the infrared detector senses the fire; the light emitted by the first electroluminescent diode and the light emitted by the second electroluminescent diode form mixed light. The embodiment provided by the invention responds to the sensed fire, combines the mixed light emitted by the first electroluminescent diode and the second electroluminescent diode, and realizes the infrared alarm function according to the brightness or color of the presented light, thereby having wide application prospect.
Description
Technical Field
The invention relates to the technical field of display, in particular to a fire detection device, a manufacturing method, a fire detection system and a fire escape prompting system.
Background
Organic electroluminescent diodes (OLEDs) are widely used in various fields due to their low power consumption, light weight, thin thickness, foldability, etc. In the field of fire monitoring, how to detect fire by adopting an organic light-emitting diode according to the characteristics of the fire becomes a problem to be solved by research and development personnel.
Disclosure of Invention
In order to solve at least one of the above problems, a first aspect of the present invention provides a fire detection apparatus including a substrate, a first electroluminescent diode, a second electroluminescent diode, a thin film transistor, and an infrared detector disposed on the substrate, wherein,
the first electroluminescent diode emits light in response to the driving of the thin film transistor;
the second electroluminescent diode responds to the driving luminescence of the photo-generated current generated after the infrared detector senses the fire;
the light emitted by the first electroluminescent diode and the light emitted by the second electroluminescent diode form mixed light.
Further, the infrared detector comprises a first electrode, a second electrode and an infrared photodiode between the first electrode and the second electrode, at least one of the first electrode and the second electrode is made of a temperature-controlled phase-change material, a metal conductor is formed in response to an external temperature, and a photo-generated current is generated according to infrared light sensed by the infrared photodiode.
Further, the first electrode and the second electrode are made of the same or different temperature control phase change materials.
Further, the first electrode and the second electrode are vanadium dioxide.
Further, the thin film transistor is conducted in response to the photo-generated current, so that the first electroluminescent diode is driven to emit light.
Further, the orthographic projection of the first electroluminescent diode on the substrate covers the orthographic projection of the second electroluminescent diode on the substrate;
or
The orthographic projection of the first electroluminescent diode on the substrate does not overlap with the orthographic projection of the second electroluminescent diode on the substrate.
Further, in a case where the orthographic projection of the first electroluminescent diode on the substrate covers the orthographic projection of the second electroluminescent diode on the substrate, the fire detection apparatus includes:
a substrate;
the infrared detector comprises a thin film transistor and an infrared detector, wherein the thin film transistor and the infrared detector are formed on the substrate, the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises a first electrode, an infrared photodiode and a second electrode;
a second electroluminescent diode formed on the first electrode of the infrared detector, the second electroluminescent diode including a second anode, a second light emitting layer, and a second cathode, the second anode being electrically connected to the first electrode;
an interlayer insulating layer formed on the second cathode;
a first electroluminescent diode formed on the interlayer insulating layer, the first electroluminescent diode including a first anode, a first light emitting layer, and a first cathode, the first anode being electrically connected to a source or a drain of the thin film transistor;
or
In a case where an orthographic projection of the first electroluminescent diode on the substrate does not overlap with an orthographic projection of the second electroluminescent diode on the substrate, the fire detection device includes:
a substrate;
the infrared detector comprises a thin film transistor and an infrared detector, wherein the thin film transistor and the infrared detector are formed on the substrate, the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises a first electrode, an infrared photodiode and a second electrode;
an interlayer insulating layer covering the thin film transistor and the infrared detector;
a first electroluminescent diode formed on the interlayer insulating layer, the first electroluminescent diode including a first anode, a first light emitting layer, and a first cathode, the first anode being electrically connected to a source or a drain of the thin film transistor through a via hole;
the second electroluminescent diode is formed on the interlayer insulating layer and comprises a second anode, a second light emitting layer and a second cathode, the second anode is electrically connected with the first electrode of the infrared detector through a through hole, the first anode and the second anode are arranged on the same layer, the first light emitting layer and the second light emitting layer are arranged on the same layer, and the first cathode and the second cathode are arranged on the same layer.
A second aspect of the invention provides a fire detection system comprising
The fire detection device of the first aspect;
a first photoelectric converter that converts the mixed light into a first electrical signal, and a communication device that transmits an alarm signal in response to the first electrical signal;
and/or
The second photoelectric converter converts the mixed light into a second electrical signal, and the audio alarm responds to the second electrical signal to form a corresponding audio alarm.
The invention provides a fire escape prompting system, which comprises a plurality of fire detection devices of the first aspect or fire detection systems of the second aspect, wherein the fire detection devices or the fire detection systems are arranged at different positions in a building.
The fourth aspect of the present invention provides a method for manufacturing a fire detection device, comprising:
forming a thin film transistor and an infrared detector on the substrate, wherein the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate are not overlapped, and the infrared detector comprises a first electrode, an infrared photodiode and a second electrode;
forming a second electroluminescent diode on the first electrode of the infrared detector, wherein the second electroluminescent diode comprises a second anode, a second luminescent layer and a second cathode, and the second anode is electrically connected with the first electrode;
forming an interlayer insulating layer on the second cathode;
forming a first electroluminescent diode on the interlayer insulating layer, wherein the first electroluminescent diode comprises a first anode, a first light-emitting layer and a first cathode, and the first anode is electrically connected with a source electrode or a drain electrode of the thin film transistor;
or
Forming a thin film transistor and an infrared detector on the substrate, wherein the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate are not overlapped, and the infrared detector comprises a first electrode, an infrared photodiode and a second electrode;
forming an interlayer insulating layer covering the thin film transistor and the infrared detector;
the first anode and the second anode are formed on the interlayer insulating layer and arranged on the same layer, the first anode is electrically connected with the source electrode or the drain electrode of the thin film transistor through a through hole, and the second anode is electrically connected with the first electrode of the infrared detector through a through hole;
forming a pixel defining layer on the interlayer insulating layer where the first anode and the second anode are formed;
a first light-emitting layer and a second light-emitting layer defined by the pixel defining layer and formed on the first anode and the second anode, respectively, the first light-emitting layer and the second light-emitting layer being disposed in the same layer;
and forming a cathode covering the first light-emitting layer, the second light-emitting layer and the pixel defining layer.
The invention has the following beneficial effects:
aiming at the existing problems, the invention provides a fire detection device and a manufacturing method thereof, a fire detection system and a fire escape prompting system, wherein a first electroluminescent diode is driven by a thin film transistor to emit light, an infrared detector senses the fire to drive a second electroluminescent diode to emit light, and the infrared alarm function is realized by combining the light emitted by the first electroluminescent diode and the light emitted by the second electroluminescent diode according to the brightness or color of the presented light; when the first electrode and the second electrode of the infrared detector adopt the temperature control phase change material and the infrared photodiode of the infrared detector senses infrared light so as to drive the second electroluminescent diode to emit light, on one hand, the luminous efficiency of the fire detection device is effectively improved, on the other hand, the heat energy generated by the traditional device is reused by actively sensing the infrared light, and the infrared detector has wide application prospect.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
FIG. 1 is a schematic structural diagram of a fire detection device according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a fire detection device according to another embodiment of the present invention;
FIG. 3 is a flow chart illustrating a method of fabricating a fire detection device according to one embodiment of the present invention;
FIG. 4 is a flow chart illustrating a method of fabricating a fire detection device according to another embodiment of the present invention;
FIG. 5 is a block diagram of a fire detection system according to an embodiment of the present invention;
fig. 6 is a schematic view illustrating a scene of a fire escape prompt according to an embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the invention, the invention is further described below with reference to preferred embodiments and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
As shown in fig. 1, an embodiment of the present invention provides a fire detection apparatus, including a substrate, a first electroluminescent diode, a second electroluminescent diode, a thin film transistor, and an infrared detector disposed on the substrate, wherein the first electroluminescent diode emits light in response to driving of the thin film transistor; the second electroluminescent diode responds to the driving luminescence of the photo-generated current generated after the infrared detector senses the fire; the light emitted by the first electroluminescent diode and the light emitted by the second electroluminescent diode form mixed light.
In the present embodiment, as shown in fig. 1, the first electroluminescent diode 17 is driven by the thin film transistor 11 to emit light, and the thin film transistor 11 turns on the source and the drain in response to the gate signal to drive the first electroluminescent diode to emit light, that is, the first electroluminescent diode emits light in response to the driving of the thin film transistor; the second electroluminescent diode 15 is driven by the infrared detector 12 to emit light, and when the infrared detector 12 senses infrared light, a photo-generated current is generated, so that the second electroluminescent diode is driven to emit light, that is, the second electroluminescent diode is driven to emit light in response to the photo-generated current generated after the infrared detector senses fire. In practical application, when a fire occurs, flame generates infrared light, the infrared detector 12 in the fire detection device senses the infrared light of the fire and generates a photo-generated current to drive the second electroluminescent diode 15 to emit light, and meanwhile, the first electroluminescent diode is driven by the thin film transistor to emit light, so that the fire detection device presents the brightness and the penetrating power of the mixed light superposed by the first electroluminescent diode and the second electroluminescent diode, and the problem that the second electroluminescent diode 15 emits light is covered by a large amount of smoke generated when the fire occurs can be solved, so that the fire detection device can sense the fire and perform fire prompting alarm according to the presented mixed light. It should be noted that, since the first electroluminescent diode is driven by the thin film transistor, for example, under normal conditions, the fire detection device of the present embodiment is utilized to perform ordinary illumination, and those skilled in the art should set the first electroluminescent diode to emit light or not emit light under normal conditions according to practical application requirements, and details thereof are not repeated herein.
In view of the power consumption of the fire detection device, in an alternative embodiment, the thin film transistor is turned on in response to the photo-generated current to drive the first electroluminescent diode to emit light.
In this embodiment, the gate of the thin film transistor is electrically connected to the infrared detector through a via hole, and when the infrared detector senses a fire and generates a photo-generated current, the thin film transistor is turned on to drive the first electroluminescent diode to emit light, so that the infrared detector controls the first electroluminescent diode and the second electroluminescent diode to emit light in a linkage manner when the fire occurs.
It should be noted that this embodiment is only used for illustrating a specific embodiment, and the embodiment is not limited, and a person skilled in the art should set the control manner of the infrared detector and the thin film transistor according to the actual application requirement, which is not described herein again.
Considering that a fire is sensed only by infrared light, which is a large amount of infrared light in real life, easily causes a false alarm, and thus, according to other characteristics exhibited by the fire, in an alternative embodiment, the infrared detector includes a first electrode, a second electrode, and an infrared photodiode disposed between the first electrode and the second electrode, at least one of the first electrode and the second electrode being a temperature-controlled phase-change material, a metal conductor being formed in response to an external temperature and generating a photo-generated current according to the infrared light sensed by the infrared photodiode.
In a specific example, as shown in fig. 1, the fire detection device includes a substrate 10, a thin film transistor 11 and an infrared detector 12 formed on the substrate 10, an orthographic projection of the thin film transistor on the substrate and an orthographic projection of the infrared detector on the substrate do not overlap, the thin film transistor 11 includes a gate electrode, an active layer, a source electrode 111 and a drain electrode 112, the source electrode 111 and the drain electrode 112 are electrically connected to the active layer through a via hole penetrating through a gate insulating layer 13, and the infrared detector 12 is located on one side of the thin film transistor 11 and includes a first electrode 121, an infrared photodiode 122 and a second electrode 123; a second electroluminescent diode 15 formed on the first electrode 121 of the infrared detector 12, wherein the second electroluminescent diode 15 is located in an area surrounded by the pixel defining layer 14, and includes a second anode 153, a second light emitting layer 152 and a second cathode 151, and the second anode 153 is electrically connected to the first electrode 121; an interlayer insulating layer 16 formed on the second cathode 151; a first electroluminescent diode 17 formed on the interlayer insulating layer 16, wherein the first electroluminescent diode 17 includes a first anode 173, a first light emitting layer 172, and a first cathode 171, the first anode 173 and the first light emitting layer 172 are located in a region surrounded by the pixel defining layer 14, the first anode 173 is electrically connected to the drain 112 of the thin film transistor 11, and the first cathode 171 covers the first light emitting layer 172 and the pixel defining layer 14.
In this embodiment, the infrared photodiode of the infrared detector is used for sensing infrared light in a fire, the first electrode and the second electrode of the infrared detector are made of a temperature-controlled phase-change material, the temperature-controlled phase-change material can realize phase change according to the temperature rising in the fire, and is changed from one phase to another phase, and the chemical composition before and after the phase change is unchanged. The temperature-controlled phase-change material in this embodiment changes from an insulator to a conductor during a temperature rise, i.e., the infrared detector senses temperature and infrared light simultaneously. Specifically, when the temperature does not reach the phase transition temperature, the first electrode and the second electrode are insulators, and the infrared photodiode and the second electroluminescent diode are not connected; when a fire occurs, the temperature rises, when the temperature reaches the phase change temperature, the first electrode and the second electrode are converted into conductors and are connected into the loaded power supply voltage, meanwhile, the infrared photodiode senses that infrared light is conducted and generates current carriers (holes), the first electrode and the second electrode are connected into the power supply voltage to form an internal electric field, the current carriers (holes) are transferred to the second electroluminescent diode, electrons in the second electroluminescent diode are injected from the negative voltage, and the holes and the electrons are compounded in the light emitting layer to generate photons for emitting light. In other words, the first electrode and the second electrode of the infrared detector are converted into conductors in response to the temperature rise of the fire and form an electric field according to the loaded power voltage, and the infrared photodiode senses the infrared light of the fire and generates a photo-generated current under the action of the electric field, so that the second electroluminescent diode is driven to emit light through the first electrode electrically connected with the second anode of the second electroluminescent diode. On the basis that the second electroluminescent diode emits light, the light emitted by the first electroluminescent diode is superposed, and the fire detection device presents the brightness and the penetrating power of the mixed light, so that fire sensing and alarm prompting are realized.
It should be noted that the above embodiment is only used to illustrate one specific implementation of the present application, where at least one of the first electrode and the second electrode of the infrared detector is made of a temperature-controlled phase-change material, that is, the first electrode or the second electrode is made of a temperature-controlled phase-change material, or the first electrode and the second electrode are made of a temperature-controlled phase-change material. For example: the first electrode or the second electrode is made of a temperature control phase change material, when the temperature rises to reach the phase change temperature of the first electrode or the second electrode, the first electrode or the second electrode is converted into a conductor and is connected with a loaded power supply voltage, so that an internal electric field is formed by the first electrode or the second electrode and the corresponding second electrode or the first electrode, the transfer of carriers generated by the infrared photodiode is controlled, and photon luminescence is generated. The person skilled in the art should be reasonably designed according to the practical application requirements to meet the sensing requirements of the infrared detector for the fire temperature and the infrared light, and the detailed description is omitted here.
In an alternative embodiment, the first electrode and the second electrode are the same or different temperature controlled phase change materials. That is, when the first electrode and the second electrode are both made of temperature-controlled phase-change materials, the first electrode and the second electrode may be made of different temperature-controlled phase-change materials, for example, two temperature-controlled phase-change materials with different phase-change temperatures; the same temperature control phase change material can also be adopted, in the embodiment, the first electrode and the second electrode are both vanadium dioxide, when the temperature reaches the phase change temperature of 68 degrees, the vanadium dioxide is converted into a conductor from an insulator, and the infrared detector senses infrared light, so that the fire can be accurately identified, and the infrared detector drives the second electroluminescent diode to emit light.
In the above embodiment, the orthographic projection of the first electroluminescent diode on the substrate covers the orthographic projection of the second electroluminescent diode on the substrate, that is, the first electroluminescent diode is superposed on the second electroluminescent diode, when a fire occurs, the infrared detector drives the second electroluminescent diode to emit light, and the light is superposed on the first electroluminescent diode, so that the brightness and the penetrating power of mixed light are presented to realize fire sensing and alarm prompting.
In view of the manufacturing process steps of the fire detection device, in an alternative embodiment, as shown in fig. 2, the fire detection device includes: the fire detection device includes a substrate 10; a thin film transistor 11 and an infrared detector 12 formed on the substrate 10, an orthographic projection of the thin film transistor 11 on the substrate 10 and an orthographic projection of the infrared detector 12 on the substrate 10 do not overlap, the infrared detector 12 is located on one side of the thin film transistor 11, and the infrared detector 12 comprises a first electrode 121, an infrared photodiode 122 and a second electrode 123; an interlayer insulating layer 16 covering the thin film transistor 11 and the infrared detector 12; a first electroluminescent diode 17 formed on the interlayer insulating layer 16, the first electroluminescent diode 17 including a first anode 173, a first light emitting layer 172, and a first cathode 171, the first anode 173 being electrically connected to a source or a drain of the thin film transistor 11 through a via hole penetrating the interlayer insulating layer 16; a second electroluminescent diode 15 formed on the interlayer insulating layer 16, wherein the second electroluminescent diode 15 includes a second anode 153, a second light emitting layer 152, and a second cathode 151, the second anode 153 is electrically connected to the first electrode 121 of the infrared detector 12 through a via hole penetrating through the interlayer insulating layer 16, the first anode 173 and the second anode 153 are disposed in the same layer, the first light emitting layer 172 and the second light emitting layer 152 are disposed in the same layer, and the first cathode 171 and the second cathode 151 are disposed in the same layer; the orthographic projection of the first electroluminescent diode on the substrate does not overlap with the orthographic projection of the second electroluminescent diode on the substrate.
In this embodiment, the steps of the manufacturing process of the fire detection device are effectively reduced by the first anode of the first electroluminescent diode and the second anode of the second electroluminescent diode, the first light emitting layer and the second light emitting layer, and the first cathode and the second cathode which are arranged in the same layer.
Corresponding to the fire detection device provided in the foregoing embodiments, an embodiment of the present application further provides a manufacturing method of the fire detection device, and since the manufacturing method provided in the embodiment of the present application corresponds to the fire detection devices provided in the foregoing embodiments, the foregoing embodiment is also applicable to the manufacturing method provided in the embodiment, and detailed description is not given in this embodiment.
As shown in fig. 3, an embodiment of the present application further provides a method for manufacturing a fire detection device, including: forming a thin film transistor and an infrared detector on the substrate, wherein the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate are not overlapped, and the infrared detector comprises a first electrode, an infrared photodiode and a second electrode; forming a second electroluminescent diode on the first electrode of the infrared detector, wherein the second electroluminescent diode comprises a second anode, a second luminescent layer and a second cathode, and the second anode is electrically connected with the first electrode; forming an interlayer insulating layer on the second cathode; and forming a first electroluminescent diode on the interlayer insulating layer, wherein the first electroluminescent diode comprises a first anode, a first light-emitting layer and a first cathode, and the first anode is electrically connected with a source electrode or a drain electrode of the thin film transistor.
In view of reducing the manufacturing process steps of the fire detection device, as shown in fig. 4, an embodiment of the present application further provides a method for manufacturing a fire detection device, including: forming a thin film transistor and an infrared detector on the substrate, wherein the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate are not overlapped, and the infrared detector is positioned on one side of the thin film transistor and comprises a first electrode, an infrared photodiode and a second electrode; forming an interlayer insulating layer covering the thin film transistor and the infrared detector; forming an interlayer insulating layer covering the thin film transistor and the infrared detector; the first anode and the second anode are formed on the interlayer insulating layer and arranged on the same layer, the first anode is electrically connected with the source electrode or the drain electrode of the thin film transistor through a through hole, and the second anode is electrically connected with the first electrode of the infrared detector through a through hole; forming a pixel defining layer on the interlayer insulating layer where the first anode and the second anode are formed; a first light-emitting layer and a second light-emitting layer defined by the pixel defining layer and formed on the first anode and the second anode, respectively, the first light-emitting layer and the second light-emitting layer being disposed in the same layer; and forming a cathode covering the first light-emitting layer, the second light-emitting layer and the pixel defining layer.
Based on above-mentioned fire detection device, as shown in fig. 5, an embodiment of this application still provides a fire detection system, including above-mentioned fire detection device, first photoelectric converter and communication device, first photoelectric converter will mix light conversion and become first electric signal, communication device responds to first electric signal sends alarm signal.
In this embodiment, when a fire occurs, flame generates infrared light, an infrared detector of the fire detection device senses the infrared light of the fire and generates a photo-generated current to drive a second electroluminescent diode to emit light, and then the infrared alarm presents the brightness and the penetrating power of the light superposed by the first electroluminescent diode and the second electroluminescent diode, and then the mixed light is converted into a first electric signal by a first photoelectric converter and transmitted out by a communication device, for example, to a remote monitoring room, so that the fire is alarmed and monitored.
In another embodiment, a second opto-electric converter that converts the mixed light into a second electrical signal and an audible alarm that forms a corresponding audible alarm in response to the second electrical signal are also included.
In this embodiment, the fire detection system will through the second photoelectric converter mixed light conversion for the second signal of telecommunication, rethread audio alarm ware basis the audio alarm is realized to the second signal of telecommunication to further be convenient for the alarm and remind.
Based on above-mentioned fire detection device and fire detecting system, an embodiment of this application still provides an utilize above-mentioned fire detection device or fire detecting system's fire suggestion system of fleing, as shown in fig. 6, including a plurality of fire detection device or a plurality of fire detecting system, wherein fire detection device or fire detecting system set up the different positions in the building.
When a fire occurs, a worker cannot recognize the fire due to instantaneous generation of a large amount of smoke, and may select an incorrect escape route. As shown in fig. 6, a fire evacuation plan view of a warehouse is shown, in this embodiment, a plurality of fire detection devices or a plurality of fire detection systems 100 are provided in the warehouse, and when a fire occurs, the fire detection devices sense the fire according to the location to light the first and second electroluminescent diodes at a fire place, so that when a worker escapes from smoke, the worker can immediately know the fire place according to the lighted fire detection devices, and can quickly select the route of the unlit fire detection device to escape, thereby realizing the fire escape prompt.
Aiming at the existing problems, the invention provides a fire detection device and a manufacturing method thereof, a fire detection system and a fire escape prompting system, wherein a first electroluminescent diode is driven by a thin film transistor to emit light, an infrared detector senses the fire to drive a second electroluminescent diode to emit light, and the infrared alarm function is realized by combining the light emitted by the first electroluminescent diode and the light emitted by the second electroluminescent diode according to the brightness or color of the presented light; when the first electrode and the second electrode of the infrared detector adopt the temperature control phase change material and the infrared photodiode of the infrared detector senses infrared light so as to drive the second electroluminescent diode to emit light, on one hand, the luminous efficiency of the fire detection device is effectively improved, on the other hand, the heat energy generated by the traditional device is reused by actively sensing the infrared light, and the infrared detector has wide application prospect.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it will be obvious to those skilled in the art that other variations or modifications may be made on the basis of the above description, and all embodiments may not be exhaustive, and all obvious variations or modifications may be included within the scope of the present invention.
Claims (10)
1. A fire detection device comprises a substrate, a first electroluminescent diode, a second electroluminescent diode, a thin film transistor and an infrared detector arranged on the substrate,
the first electroluminescent diode emits light in response to the driving of the thin film transistor;
the second electroluminescent diode responds to the driving luminescence of the photo-generated current generated after the infrared detector senses the fire;
the light emitted by the first electroluminescent diode and the light emitted by the second electroluminescent diode form mixed light.
2. The fire detection device of claim 1, wherein the infrared detector comprises a first electrode, a second electrode, and an infrared photodiode disposed between the first and second electrodes, at least one of the first and second electrodes being a temperature controlled phase change material, forming a metal conductor in response to an external temperature and generating a photo-generated current from infrared light sensed by the infrared photodiode.
3. The fire detection device of claim 2, wherein the first and second electrodes are the same or different temperature controlled phase change materials.
4. The fire detection device of claim 2, wherein the first and second electrodes are vanadium dioxide.
5. The fire detection device of claim 1,
the thin film transistor is turned on in response to the photo-generated current, thereby driving the first electroluminescent diode to emit light.
6. The fire detection apparatus according to any one of claims 1 to 5,
the orthographic projection of the first electroluminescent diode on the substrate covers the orthographic projection of the second electroluminescent diode on the substrate;
or
The orthographic projection of the first electroluminescent diode on the substrate does not overlap with the orthographic projection of the second electroluminescent diode on the substrate.
7. The fire detection device of claim 6,
in a case where the orthographic projection of the first electroluminescent diode on the substrate covers the orthographic projection of the second electroluminescent diode on the substrate, the fire detection apparatus includes:
a substrate;
the infrared detector comprises a thin film transistor and an infrared detector, wherein the thin film transistor and the infrared detector are formed on the substrate, the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises a first electrode, an infrared photodiode and a second electrode;
a second electroluminescent diode formed on the first electrode of the infrared detector, the second electroluminescent diode including a second anode, a second light emitting layer, and a second cathode, the second anode being electrically connected to the first electrode;
an interlayer insulating layer formed on the second cathode;
a first electroluminescent diode formed on the interlayer insulating layer, the first electroluminescent diode including a first anode, a first light emitting layer, and a first cathode, the first anode being electrically connected to a source or a drain of the thin film transistor;
or
In a case where an orthographic projection of the first electroluminescent diode on the substrate does not overlap with an orthographic projection of the second electroluminescent diode on the substrate, the fire detection device includes:
a substrate;
the infrared detector comprises a thin film transistor and an infrared detector, wherein the thin film transistor and the infrared detector are formed on the substrate, the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate do not overlap, and the infrared detector comprises a first electrode, an infrared photodiode and a second electrode;
an interlayer insulating layer covering the thin film transistor and the infrared detector;
a first electroluminescent diode formed on the interlayer insulating layer, the first electroluminescent diode including a first anode, a first light emitting layer, and a first cathode, the first anode being electrically connected to a source or a drain of the thin film transistor through a via hole;
the second electroluminescent diode is formed on the interlayer insulating layer and comprises a second anode, a second light emitting layer and a second cathode, the second anode is electrically connected with the first electrode of the infrared detector through a through hole, the first anode and the second anode are arranged on the same layer, the first light emitting layer and the second light emitting layer are arranged on the same layer, and the first cathode and the second cathode are arranged on the same layer.
8. A fire detection system is characterized by comprising
The fire detection device of any one of claims 1-7;
a first photoelectric converter that converts the mixed light into a first electrical signal, and a communication device that transmits an alarm signal in response to the first electrical signal;
and/or
The second photoelectric converter converts the mixed light into a second electrical signal, and the audio alarm responds to the second electrical signal to form a corresponding audio alarm.
9. A fire escape prompting system, comprising a plurality of fire detection devices according to any of claims 1-7 or fire detection systems according to claim 8, wherein the fire detection devices or fire detection systems are disposed at different locations in a building.
10. A manufacturing method of a fire detection device is characterized by comprising the following steps:
forming a thin film transistor and an infrared detector on a substrate, wherein the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate are not overlapped, and the infrared detector comprises a first electrode, an infrared photodiode and a second electrode;
forming a second electroluminescent diode on the first electrode of the infrared detector, wherein the second electroluminescent diode comprises a second anode, a second luminescent layer and a second cathode, and the second anode is electrically connected with the first electrode;
forming an interlayer insulating layer on the second cathode;
forming a first electroluminescent diode on the interlayer insulating layer, wherein the first electroluminescent diode comprises a first anode, a first light-emitting layer and a first cathode, and the first anode is electrically connected with a source electrode or a drain electrode of the thin film transistor;
or
Forming a thin film transistor and an infrared detector on a substrate, wherein the orthographic projection of the thin film transistor on the substrate and the orthographic projection of the infrared detector on the substrate are not overlapped, and the infrared detector comprises a first electrode, an infrared photodiode and a second electrode;
forming an interlayer insulating layer covering the thin film transistor and the infrared detector;
the first anode and the second anode are formed on the interlayer insulating layer and arranged on the same layer, the first anode is electrically connected with the source electrode or the drain electrode of the thin film transistor through a through hole, and the second anode is electrically connected with the first electrode of the infrared detector through a through hole;
forming a pixel defining layer on the interlayer insulating layer where the first anode and the second anode are formed;
a first light-emitting layer and a second light-emitting layer defined by the pixel defining layer and formed on the first anode and the second anode, respectively, the first light-emitting layer and the second light-emitting layer being disposed in the same layer;
and forming a cathode covering the first light-emitting layer, the second light-emitting layer and the pixel defining layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911010225.4A CN110739336B (en) | 2019-10-23 | 2019-10-23 | Fire detection device, manufacturing method, detection system and escape prompting system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911010225.4A CN110739336B (en) | 2019-10-23 | 2019-10-23 | Fire detection device, manufacturing method, detection system and escape prompting system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110739336A CN110739336A (en) | 2020-01-31 |
| CN110739336B true CN110739336B (en) | 2021-10-29 |
Family
ID=69270996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911010225.4A Active CN110739336B (en) | 2019-10-23 | 2019-10-23 | Fire detection device, manufacturing method, detection system and escape prompting system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110739336B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08305975A (en) * | 1995-04-28 | 1996-11-22 | Aiphone Co Ltd | Fire sensing device |
| CN103394171A (en) * | 2013-08-02 | 2013-11-20 | 重庆大学 | Large high-rise building indoor fire urgent evacuation indication escape method and system |
| CN104056372A (en) * | 2014-02-11 | 2014-09-24 | 苏州天趣信息科技有限公司 | Emergency warning lighting device |
| CN104110636A (en) * | 2013-04-22 | 2014-10-22 | 广东纳明新材料科技有限公司 | Multifunctional luminous lamp |
| CN106210479A (en) * | 2016-08-29 | 2016-12-07 | 成都元始信息科技有限公司 | A kind of monitoring system with detection function |
| CN208538288U (en) * | 2018-05-23 | 2019-02-22 | 深圳市泰和安科技有限公司 | A kind of smoke fire detector circuit and smoke fire detector |
| CN109615815A (en) * | 2019-01-16 | 2019-04-12 | 广州市普利达消防工程有限公司 | A kind of fire alarm and environmental monitoring integrated system of escaping |
| CN109801935A (en) * | 2019-01-31 | 2019-05-24 | 京东方科技集团股份有限公司 | Optical detection panel and preparation method thereof, display device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9689542B2 (en) * | 2008-12-12 | 2017-06-27 | Sonja K. Zozula | Emergency exit route illumination system and methods |
| GB2557303B (en) * | 2016-12-05 | 2020-08-12 | X Fab Semiconductor Foundries Gmbh | Photodiode device and method of manufacture |
-
2019
- 2019-10-23 CN CN201911010225.4A patent/CN110739336B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08305975A (en) * | 1995-04-28 | 1996-11-22 | Aiphone Co Ltd | Fire sensing device |
| CN104110636A (en) * | 2013-04-22 | 2014-10-22 | 广东纳明新材料科技有限公司 | Multifunctional luminous lamp |
| CN103394171A (en) * | 2013-08-02 | 2013-11-20 | 重庆大学 | Large high-rise building indoor fire urgent evacuation indication escape method and system |
| CN104056372A (en) * | 2014-02-11 | 2014-09-24 | 苏州天趣信息科技有限公司 | Emergency warning lighting device |
| CN106210479A (en) * | 2016-08-29 | 2016-12-07 | 成都元始信息科技有限公司 | A kind of monitoring system with detection function |
| CN208538288U (en) * | 2018-05-23 | 2019-02-22 | 深圳市泰和安科技有限公司 | A kind of smoke fire detector circuit and smoke fire detector |
| CN109615815A (en) * | 2019-01-16 | 2019-04-12 | 广州市普利达消防工程有限公司 | A kind of fire alarm and environmental monitoring integrated system of escaping |
| CN109801935A (en) * | 2019-01-31 | 2019-05-24 | 京东方科技集团股份有限公司 | Optical detection panel and preparation method thereof, display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110739336A (en) | 2020-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9793333B2 (en) | Organic light-emitting device and method of manufacturing same | |
| US9954195B2 (en) | Organic light emitting device and method for manufacturing the same | |
| US9666830B2 (en) | Organic light emitting device and method for manufacturing the same | |
| CN100440528C (en) | Circuit arrangement for AC driving of organic diodes | |
| JP4992771B2 (en) | Lighting device | |
| US9825249B2 (en) | Organic light emitting device and method for manufacturing the same | |
| KR20120042038A (en) | Organic light emitting diode device | |
| JP2011119455A (en) | Organic el device including solar cell | |
| KR101252795B1 (en) | The apparatus of control monitorning with programmable switch | |
| JPH11109918A (en) | Organic el display device | |
| CN110739336B (en) | Fire detection device, manufacturing method, detection system and escape prompting system | |
| CN110207844A (en) | A kind of temperature sensor, temperature monitoring method and device | |
| CN113053965A (en) | Display device, preparation method and temperature detection method | |
| TW201242126A (en) | Organic light emitting diode device | |
| JP2013089302A (en) | Light emitting device and method for driving organic el element | |
| KR20100030980A (en) | Organic light emitting display | |
| JP6073143B2 (en) | Organic EL device | |
| JP2013089301A (en) | Light emitting device and method for driving organic el element | |
| CN107644892B (en) | OLED light source, display device and preparation method | |
| JP2012015078A (en) | Illumination fixture | |
| CN219876757U (en) | Light emitting device, light emitting module and display panel | |
| JP2012174559A (en) | Planar light source and lighting system | |
| JP5147110B2 (en) | Planar light-emitting illumination device | |
| JP2015219969A (en) | Illuminating device | |
| CN117794298A (en) | Luminous screen body and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |