CN110729202B - Three-dimensional heterogeneous module welding method - Google Patents
Three-dimensional heterogeneous module welding method Download PDFInfo
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- CN110729202B CN110729202B CN201910924313.9A CN201910924313A CN110729202B CN 110729202 B CN110729202 B CN 110729202B CN 201910924313 A CN201910924313 A CN 201910924313A CN 110729202 B CN110729202 B CN 110729202B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/808—Bonding techniques
- H01L2224/80801—Soldering or alloying
Abstract
The invention discloses a three-dimensional heterogeneous module welding method, which specifically comprises the following steps: 101) a radio frequency module manufacturing step, 102) a base module manufacturing step, 103) a bonding function module forming step, and 104) a replacement bonding step; the invention provides a three-dimensional heterogeneous module welding method for quickly replacing damaged module chips.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a three-dimensional heterogeneous module welding method.
Background
The microwave millimeter wave radio frequency integrated circuit technology is the basis of modern national defense weaponry and internet industry, and along with the rapid rise of the economy of internet plus such as intelligent communication, intelligent home, intelligent logistics, intelligent transportation and the like, the microwave millimeter wave radio frequency integrated circuit which bears the functions of data access and transmission also has huge practical requirements and potential markets.
In the practical application, the radio frequency integrated circuit modules are placed in groups, so that the multi-channel radio frequency module serves a terminal, and for the module with the ultrahigh-density channel, if an independent unit is abnormal in the using process, the whole module is influenced. For thousands of units of radio frequency modules, such as phased array radar, when the number of abnormal modules reaches a certain ratio, the abnormal modules can only be returned to the factory for maintenance or scrapped again.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides the three-dimensional heterogeneous module welding method for quickly replacing the damaged module chip.
The technical scheme of the invention is as follows:
a three-dimensional heterogeneous module welding method specifically comprises the following steps:
101) the radio frequency module manufacturing step: manufacturing a chip groove for placing a radio frequency chip on the upper surface of a radio frequency carrier plate, depositing silicon oxide or silicon nitride on the upper surface of the radio frequency carrier plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; electroplating metal to cover the chip groove to form a metal layer; densifying the metal layer at 200-500 ℃ to make the metal layer more dense, and only the filled metal layer is left on the upper surface of the radio frequency carrier plate through a CMP (chemical mechanical polishing) process; the radio frequency chip is placed in the chip groove in a eutectic bonding mode;
manufacturing TSV holes in the upper surface of the radio frequency carrier plate through an etching process, and thinning the bottom of the radio frequency carrier plate to expose the bottoms of the TSV holes; depositing silicon oxide or silicon nitride on the lower surface of the radio frequency carrier plate to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process;
electroplating metal on a seed layer on the lower surface of the radio frequency carrier plate to manufacture an RDL and a bonding pad, and manufacturing a protective layer on the surface of the RDL, wherein the protective layer is made of one of silicon oxide, silicon nitride or photoresist;
102) a base module manufacturing step: manufacturing TSV holes in the upper surface of the carrier plate on the base through photoetching and etching processes, and thinning the bottom of the carrier plate on the base to expose the bottoms of the TSV holes; manufacturing an upper groove in the middle area of the lower surface of the carrier plate on the base through photoetching and etching processes; depositing silicon oxide or silicon nitride on the lower surface of the upper carrier plate of the base, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process;
through photoetching and etching processes, corresponding TSV holes are manufactured at the positions, where the TSV holes and the upper grooves are formed, of the upper surface of the lower base loading plate and the upper base loading plate, the lower surface of the lower base loading plate is thinned, and the bottoms of the TSV holes are exposed; depositing silicon oxide or silicon nitride on the upper surface of the base lower carrier plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer by a physical sputtering, magnetron sputtering or evaporation process;
bonding the base upper carrier plate and the base lower carrier plate together by a eutectic bonding process to form a base module with a heat dissipation micro-channel;
103) bonding to form a functional module: bonding the radio frequency module and the base module together to form a functional module through a bonding process; the bonding temperature is controlled within the range of 150 to 500 ℃;
104) and (3) replacing and bonding: the bottom of each unit module of a base of the radio frequency integrated circuit is provided with a heating device, an interconnection pad, a micro-flow channel and an alignment air hole corresponding to the TSV hole in the base module; an exhaust device and an airflow detection device sensor are arranged at the bottom of the aligned air hole;
the functional module is placed on a base of the radio frequency integrated circuit and is fixed by the exhaust device; a temporary moving device is additionally arranged on the extended edge of the functional module, the position of the functional module is finely adjusted by the temporary moving device, and the alignment of the functional module and the base is judged through an airflow detection sensor; and removing the temporary moving device, and heating the bottom of the functional module through the pulse heating device to weld the functional module on the base of the radio frequency integrated circuit, so as to realize the interconnection of the functional module and the radio frequency integrated circuit.
Furthermore, the thickness of the base ranges from 200um to 2000um, and the material is one of glass, quartz, silicon carbide, alumina and the like, epoxy resin and polyurethane; the base provides a support function.
Furthermore, the temporary moving device adopts a fine adjustment device capable of realizing manual 0.1 micron precision, and two axial micro-movements and rotary movements of the functional module are realized.
Further, the temporary moving means sets the number of four or a multiple thereof.
Furthermore, the length range of the chip groove edge is 1um to 5cm, and the depth is 10um to 1000 um; the thickness range of the insulating layer is between 10nm and 100um, and the thickness range of the seed layer is between 1nm and 100 um; the thickness of the metal layer is between 1um and 100 um; the diameter range of the TSV hole is 1um to 1000um, and the depth of the TSV hole is 10um to 1000 um; the thickness of the bonding pad ranges from 1nm to 100 um; the groove side length ranges from 1um to 5cm, and the depth ranges from 10um to 1000 um.
Furthermore, the radio frequency carrier plate, the base upper carrier plate and the base lower carrier plate are all made of one of 4, 6, 8 and 12 inches, the thickness ranges from 200um to 2000um, and one of silicon dioxide, glass, quartz, silicon carbide, aluminum oxide, epoxy resin and polyurethane is adopted.
Compared with the prior art, the invention has the advantages that: according to the invention, the heating device, the interconnection bonding pad, the micro-flow channel and the alignment air hole corresponding to the TSV hole in the base module are arranged at the bottom of each unit module of the base of the radio frequency integrated circuit, so that when the radio frequency integrated circuit is damaged, the damaged functional module can be directly taken down in a radar working area, and then the functional module is directly and rapidly replaced on site through a manual facility, so that the overall service life of the radio frequency integrated circuit is prolonged, and the subsequent maintenance cost is reduced.
Drawings
Fig. 1 is a schematic view of a radio frequency carrier according to the present invention;
FIG. 2 is a schematic view of a base module according to the present invention;
FIG. 3 is a schematic diagram of a functional module according to the present invention;
FIG. 4 is a schematic diagram of an RF integrated circuit according to the present invention;
FIG. 5 is a schematic view of the temporary mobility assembly of FIG. 4 in accordance with the present invention;
FIG. 6 is a schematic diagram of the functional modules mounted on the substrate of FIG. 5 according to the present invention;
FIG. 7 is a diagram of a module with fine tuning and bonding functions for an RF integrated circuit according to the present invention.
The labels in the figure are: an rf carrier 101, an RDL102, a function module 103, an rf ic 104, an airflow detecting device sensor 105, a micro-flow channel 106, and a temporary moving device 107.
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, wherein like or similar reference numerals refer to like or similar elements or elements of similar function throughout. The embodiments described below with reference to the drawings are exemplary only, and are not intended as limitations on the present invention.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Reference numerals in the various embodiments are provided for steps of the description only and are not necessarily associated in a substantially sequential manner. Different steps in each embodiment can be combined in different sequences, so that the purpose of the invention is achieved.
The invention is further described with reference to the following figures and detailed description.
Example 1:
as shown in fig. 1 to 7, a method for welding a three-dimensional heterogeneous module specifically includes the following steps:
101) the radio frequency module manufacturing step: a chip slot for placing a radio frequency chip is manufactured on the upper surface of the radio frequency carrier plate 101, and the chip slot is generally square, and the range of the chip slot is 1um to 5cm, and the depth of the chip slot is 10um to 1000 um. Depositing silicon oxide or silicon nitride on the upper surface of the radio frequency carrier plate 101, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process. The thickness range of the insulating layer is between 10nm and 100um, the thickness range of the seed layer is between 1nm and 100um, and the size is adopted without special description in the following; the seed layer may be a single layer or a multi-layer structure, and the material may be one or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel, and the like. The chip groove is covered by electroplated metal to form a metal layer with the thickness of 1um to 100um, the structure of the metal layer can be one layer or multiple layers, and the metal material can be one or more of copper, titanium, aluminum, silver, palladium, gold, thallium, tin, nickel and the like. Densifying the metal layer at 200-500 ℃ to make the metal layer more dense, and only the filled metal layer is left on the upper surface of the radio frequency carrier plate 101 through a CMP (chemical mechanical polishing) process; the corresponding insulating layer on the upper surface of the radio frequency carrier plate 101 can also be removed by a dry etching or wet etching process, or the insulating layer is reserved, so that subsequent operations are not affected. The radio frequency chip is placed in the chip groove in a eutectic bonding mode.
The etching process is used for manufacturing TSV holes in the upper surface of the radio frequency carrier plate 101, the diameter range of the TSV holes is 1um to 1000um, the depth of the TSV holes is 10um to 1000um, and the TSV holes with the size are adopted without special descriptions in the follow-up process. And thinning the bottom of the radio frequency carrier plate 101 to expose the bottom of the TSV hole. Depositing silicon oxide or silicon nitride on the lower surface of the radio frequency carrier plate 101 to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process.
Electroplating metal on the seed layer on the lower surface of the radio frequency carrier 101 to manufacture the RDL102 and the bonding pad, and manufacturing a protective layer on the surface of the RDL102, wherein the protective layer is made of one of silicon oxide, silicon nitride or photoresist. The RDL102 is manufactured through a photolithography process, a dry etching process, a windowing process, and a photolithography process, an electroplating process, and the RDL102 includes a metal routing layout.
102) A base module manufacturing step: manufacturing TSV holes in the upper surface of the carrier plate on the base through photoetching and etching processes, and thinning the bottom of the carrier plate on the base to expose the bottoms of the TSV holes; manufacturing an upper groove in the middle area of the lower surface of the carrier plate on the base through photoetching and etching processes; depositing silicon oxide or silicon nitride on the lower surface of the upper carrier plate of the base, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process;
through photoetching and etching processes, corresponding TSV holes are manufactured at the positions, where the TSV holes and the upper grooves are formed, of the upper surface of the lower base loading plate and the upper base loading plate, the lower surface of the lower base loading plate is thinned, and the bottoms of the TSV holes are exposed; depositing silicon oxide or silicon nitride on the upper surface of the base lower carrier plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer by a physical sputtering, magnetron sputtering or evaporation process;
the upper base carrier plate and the lower base carrier plate are bonded together through a eutectic bonding process to form the base module with the heat dissipation micro-channel.
The radio frequency carrier plate 101, the base upper carrier plate and the base lower carrier plate are all made of one silicon wafer of 4, 6, 8 and 12 inches, the thickness range is 200um to 2000um, the radio frequency carrier plate can also be made of other materials, including inorganic materials such as glass, quartz, silicon carbide and aluminum oxide, and also can be made of organic materials such as epoxy resin and polyurethane, and the main function of the radio frequency carrier plate is to provide a supporting function.
103) Bonding to form a functional module 103: the radio frequency module and the base module are bonded together through a bonding process to form a functional module 103; the bonding temperature is controlled within the range of 150 to 500 ℃;
104) and (3) replacing and bonding: at the bottom of each unit module of the base of the rf ic 104 are disposed a heating device, interconnect pads, microfluidic channels 106, and aligned air holes corresponding to the TSV holes in the base module. An exhaust device and an airflow detecting device sensor 105 are disposed at the bottom of the air hole.
The functional module 103 is placed on the base of the rf ic 104 and fixed by the exhaust device, i.e. the alignment air hole is accurately butted with the heat dissipation non-flow channel of the functional template, and the functional module 103 is fixed by the pressure difference after being exhausted by the exhaust device.
The temporary moving device 107 is additionally arranged on the extending edge of the functional module 103, the position of the functional module 103 is finely adjusted by the temporary moving device 107, and the alignment between the functional module 103 and the base is judged by the airflow detection sensor, namely, the airflow detection sensor indicates accurate alignment when detecting a corresponding specific value only when the alignment air hole is accurately aligned with a heat dissipation non-flow passage of the functional template. The temporary moving device 107 is removed, the bottom of the functional module 103 is heated by the pulse heating device, so that the functional module 103 is welded on the base of the radio frequency integrated circuit 104, and meanwhile, the functional module 103 is injected with heat dissipation liquid and electrically connected, and the communication between the functional module 103 and the radio frequency integrated circuit 104 is realized.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the spirit of the present invention, and these modifications and decorations should also be regarded as being within the scope of the present invention.
Claims (5)
1. A three-dimensional heterogeneous module welding method is characterized by comprising the following steps: the method specifically comprises the following steps:
101) the radio frequency module manufacturing step: manufacturing a chip groove for placing a radio frequency chip on the upper surface of the radio frequency carrier plate, depositing silicon oxide or silicon nitride on the upper surface of the radio frequency carrier plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a magnetron sputtering or evaporation process; electroplating metal to cover the chip groove to form a metal layer; densifying the metal layer at 200-500 ℃ to make the metal layer more dense, and only the filled metal layer is left on the upper surface of the radio frequency carrier plate through a CMP (chemical mechanical polishing) process; the radio frequency chip is placed in the chip groove in a eutectic bonding mode;
manufacturing TSV holes in the upper surface of the radio frequency carrier plate through an etching process, and thinning the bottom of the radio frequency carrier plate to expose the bottoms of the TSV holes; depositing silicon oxide or silicon nitride on the lower surface of the radio frequency carrier plate to form an insulating layer, and manufacturing a seed layer above the insulating layer through a magnetron sputtering or evaporation process;
electroplating metal on a seed layer on the lower surface of the radio frequency carrier plate to manufacture an RDL and a bonding pad, and manufacturing a protective layer on the surface of the RDL, wherein the protective layer is made of one of silicon oxide, silicon nitride or photoresist;
102) a base module manufacturing step: manufacturing TSV holes in the upper surface of the carrier plate on the base through photoetching and etching processes, and thinning the bottom of the carrier plate on the base to expose the bottoms of the TSV holes; manufacturing an upper groove in the middle area of the lower surface of the carrier plate on the base through photoetching and etching processes; depositing silicon oxide or silicon nitride on the lower surface of the base upper carrier plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a magnetron sputtering or evaporation process;
manufacturing corresponding TSV holes at the corresponding positions of the TSV holes and the upper grooves formed in the upper surface of the lower base loading plate and the upper base loading plate through photoetching and etching processes, and thinning the lower surface of the lower base loading plate to expose the bottoms of the TSV holes; depositing silicon oxide or silicon nitride on the upper surface of the base lower carrier plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer by a magnetron sputtering or evaporation process;
bonding the base upper carrier plate and the base lower carrier plate together by a eutectic bonding process to form a base module with a heat dissipation micro-channel;
103) bonding to form a functional module: bonding the radio frequency module and the base module together to form a functional module through a bonding process; the bonding temperature is controlled within the range of 150 to 500 ℃;
104) and (3) replacing and bonding: the bottom of each unit module of a base of the radio frequency integrated circuit is provided with a heating device, an interconnection pad, a micro-flow channel and an alignment air hole corresponding to the TSV hole in the base module; an exhaust device and an airflow detection device sensor are arranged at the bottom of the aligned air hole;
the functional module is placed on a base of the radio frequency integrated circuit and is fixed by the exhaust device; a temporary moving device is additionally arranged on the extended edge of the functional module, the position of the functional module is finely adjusted by the temporary moving device, and the alignment of the functional module and the base is judged through an airflow detection sensor; and removing the temporary moving device, and heating the bottom of the functional module through the pulse heating device to weld the functional module on the base of the radio frequency integrated circuit, so as to realize the interconnection of the functional module and the radio frequency integrated circuit.
2. The welding method of the three-dimensional heterogeneous module according to claim 1, wherein the welding method comprises the following steps: the thickness range of the base is 200-2000 μm, and the material is one of glass, quartz, silicon carbide, alumina, epoxy resin and polyurethane; the base provides a support function.
3. The welding method of the three-dimensional heterogeneous module according to claim 1, wherein the welding method comprises the following steps: the temporary moving device adopts a fine adjustment device capable of realizing manual 0.1 micron precision, and two axial micro-movements and rotary movements of the functional module are realized.
4. The welding method of the three-dimensional heterogeneous module according to claim 3, wherein the welding method comprises the following steps: the temporary mobile device sets the number of four or a multiple thereof.
5. The welding method of the three-dimensional heterogeneous module according to claim 1, wherein the welding method comprises the following steps: the radio frequency carrier plate, the base upper carrier plate and the base lower carrier plate are all made of one of 4, 6, 8 and 12 inches, the thickness ranges from 200 mu m to 2000 mu m, and one of silicon dioxide, glass, quartz, silicon carbide, aluminum oxide, epoxy resin and polyurethane is adopted.
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| CN109103165B (en) * | 2018-07-03 | 2019-12-10 | 中国电子科技集团公司第二十九研究所 | LTCC substrate three-dimensional stacking structure and airtight packaging method thereof |
| CN110010502B (en) * | 2018-10-10 | 2021-04-06 | 浙江集迈科微电子有限公司 | System-in-package process of radio frequency chip |
| CN110010475B (en) * | 2018-10-10 | 2020-08-28 | 浙江集迈科微电子有限公司 | Manufacturing process of radiating module of radio frequency chip system-in-package |
| CN110010478B (en) * | 2018-10-10 | 2021-01-26 | 浙江集迈科微电子有限公司 | Radio frequency micro-system with electromagnetic shielding function and forming process |
| CN110010484B (en) * | 2018-10-10 | 2020-08-28 | 浙江集迈科微电子有限公司 | Jack type ultra-deep TSV (through silicon Via) interconnected radio frequency chip system-in-package process |
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