CN110695849A - Wafer thickness measuring device and grinding machine - Google Patents
Wafer thickness measuring device and grinding machine Download PDFInfo
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- CN110695849A CN110695849A CN201911009313.2A CN201911009313A CN110695849A CN 110695849 A CN110695849 A CN 110695849A CN 201911009313 A CN201911009313 A CN 201911009313A CN 110695849 A CN110695849 A CN 110695849A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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Abstract
The invention discloses a wafer thickness measuring device and a grinding machine platform, wherein the measuring device comprises: the major structure, liftable suspended structure and optical sensor subassembly, the suspended structure carries in the major structure lower part, major structure lower part slidable ground sets up in suspended structure's inslot, be equipped with the first fluid pipeline that accesss to major structure and suspended structure's handing-over department in the major structure and be used for filling into first fluid in order to promote this suspended structure to this inslot, the major structure is equipped with and runs through it, the first through-hole that is used for holding optical sensor subassembly of lower surface, suspended structure's tank bottom is equipped with the second through-hole in first through-hole below in order to pass through the light path by optical sensor subassembly output, be equipped with second fluid pipeline in the suspended structure in order to realize by the major structure bottom surface, optical sensor subassembly bottom surface, be filled with the second fluid in the cavity that groove inner face and second through. The accuracy and precision of wafer thickness measurement can be effectively improved.
Description
Technical Field
The invention relates to the technical field of ultra-precise grinding of wafers, in particular to a wafer thickness measuring device and a grinding machine table.
Background
The semiconductor industry currently manufactures semiconductor chips by forming electronic circuits on the surface of a semiconductor wafer. Before the wafer is divided into semiconductor chips, the back surface of the wafer opposite to the device surface on which the electronic circuits are formed is ground by a grinding apparatus, thereby thinning the wafer to a predetermined thickness. The grinding of the back of the wafer can reduce the packaging volume of the chip, reduce the packaging and mounting height, and improve the thermal diffusion efficiency, the electrical performance and the mechanical performance of the chip, so that the processing amount of the chip is reduced, and the thickness of the chip after the back is thinned can even reach less than 5% of the initial thickness.
In order to grind the wafer to the target thickness, the thickness of the wafer needs to be measured during grinding, and non-contact optical measurement means can be adopted. The optical measurement of the wafer thickness is performed by irradiating a laser beam of a predetermined frequency onto the surface of the wafer and measuring the thickness based on the waveform of an interference wave formed by the reflected light from the surface of the wafer and the reflected light from the back surface after the laser beam irradiation. In the grinding process, water films, water drops, particle pollutants and the like exist on the surface of the wafer, the optical path of optical measurement is changed, interference is brought to non-contact measurement, and the measurement precision is influenced. In conclusion, the problems of inaccurate wafer thickness measurement and low precision exist in the prior art.
Disclosure of Invention
The embodiment of the invention provides a wafer thickness measuring device and a grinding machine table, and aims to at least solve one of the technical problems in the prior art.
A first aspect of an embodiment of the present invention provides a wafer thickness measuring apparatus, including: the major structure, liftable suspended structure and optical sensor subassembly, the suspended structure carries in the major structure lower part, major structure lower part slidable ground sets up in suspended structure's inslot, be equipped with the first fluid pipeline that accesss to major structure and suspended structure's handing-over department in the major structure and be used for filling into first fluid in order to promote this suspended structure to this inslot, the major structure is equipped with and runs through it, the first through-hole that is used for holding optical sensor subassembly of lower surface, suspended structure's tank bottom is equipped with the second through-hole in first through-hole below in order to pass through the light path by optical sensor subassembly output, be equipped with second fluid pipeline in the suspended structure in order to realize by the major structure bottom surface, optical sensor subassembly bottom surface, be filled with the second fluid in the cavity that groove inner face and second through.
In one embodiment, the body structure includes a middle portion, an annular upper flange extending outwardly from an upper end of the middle portion, and an annular lower flange extending outwardly from a lower end of the middle portion, the lower flange being positioned within the slot of the hanging structure to overhang the hanging structure.
In one embodiment, the middle portion is provided with a first through hole and a first fluid line, the first fluid line is not communicated with the first through hole, and an outlet of the first fluid line is arranged at the connecting position of the upper surface of the lower flange and the side surface of the middle portion.
In one embodiment, the suspension structure includes an upwardly open barrel portion and an annular inner flange extending inwardly from an upper end of the barrel portion, the barrel portion and inner flange defining the slot to retain the lower flange of the body structure within the slot.
In one embodiment, the cartridge portion is provided with a second through hole and a second fluid line, the second fluid line communicating with the second through hole.
In one embodiment, the optical sensor assembly includes an optical sensor and a transparent baffle positioned below the optical sensor.
In one embodiment, the suspension structure is further provided with a first sealing ring around the inner side of the inner flange to achieve a gas tight seal when the inner side of the inner flange is in sliding engagement with the outer side of the intermediate portion.
In one embodiment, the body structure is further provided with a third sealing ring surrounding the outer side surface of the lower flange to achieve an airtight seal when the outer side surface of the lower flange is slidably fitted with the inner side surface of the barrel portion.
In one embodiment, the wafer thickness measurement device further comprises a movable support coupled to the body structure.
A second aspect of an embodiment of the present invention provides a grinding machine, including:
the grinding mechanism is used for enabling the grinding wheel to abut against the wafer so as to grind and thin the wafer;
the sucking disc is used for holding the wafer and driving the wafer to rotate;
the rotary table is used for bearing a preset number of the suckers and driving all the suckers to integrally rotate;
the turntable is provided with the wafer thickness measuring device.
The embodiment of the invention has the beneficial effects that: the accuracy and precision of wafer thickness measurement can be effectively improved.
Drawings
The advantages of the invention will become clearer and more readily appreciated from the detailed description given with reference to the following drawings, which are given by way of illustration only and do not limit the scope of protection of the invention, wherein:
fig. 1 is a schematic structural diagram of a grinding machine according to an embodiment of the present invention;
fig. 2 is a schematic partial structural view of a grinding machine according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a measurement principle provided by an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a wafer thickness measuring apparatus according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a wafer thickness measuring apparatus according to an embodiment of the present invention;
fig. 6 is a flowchart illustrating an operation method according to an embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention for the purpose of illustrating the concepts of the invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein. It should be understood that, unless otherwise specified, the following description of the embodiments of the present invention is made for the convenience of understanding, and the description is made in a natural state where relevant devices, apparatuses, components, etc. are originally at rest and no external control signals and driving forces are given.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
In the chip preparation process, an electronic circuit is formed on the surface of the wafer to realize a preset chip function, and the back surface of the surface is ground to realize the back surface thinning of the wafer. The back grinding of the wafer is suitably performed by a grinding machine provided in one embodiment as shown in fig. 1.
As shown in fig. 1, a grinding machine provided in an embodiment of the present invention includes:
a grinding mechanism 3 for making the grinding wheel abut against the wafer to grind and thin the wafer;
the sucking disc 1 is used for holding the wafer and driving the wafer to rotate;
the rotary table 2 is used for bearing a preset number of suckers and driving all the suckers to integrally rotate;
wherein, a wafer thickness measuring device 4 is arranged on the turntable 2.
As an implementable mode, a plurality of sucking discs 1 are arranged on the rotary table 2 at equal intervals in the circumferential direction, each sucking disc 1 can rotate independently, and the rotary table 2 can rotate around a vertical central axis of the rotary table to drive the plurality of sucking discs 1 to rotate integrally so as to realize the switching of the sucking discs 1 between different stations.
As shown in fig. 1, 3 independently rotatable suction cups 1 are uniformly distributed on a turntable 2, which are respectively a first suction cup, a second suction cup and a third suction cup for sucking a wafer, and all the suction cups 1 are porous ceramic suction cups having the same structure to realize vacuum suction of the wafer. The wafer is sucked onto the horizontal suction surface of the vacuum chuck 1 to hold the wafer, and the back surface of the wafer is subjected to rough grinding and finish grinding in this order by the grinding mechanism 3.
The centers of the 3 suckers 1 and the central connecting line of the turntable 2 form an included angle of 120 degrees. The 3 suction cups 1 correspond to 3 stations, namely a rough grinding station 11, a fine grinding station 12 and a loading and unloading station 13, wherein 2 stations corresponding to the grinding wheel are respectively used for rough grinding and fine grinding, and 1 station is left for loading, unloading and cleaning wafers. The rotation of the turntable 2 can drive the 3 suckers 1 to switch among the 3 stations, so that the suckers 1 can carry the wafer to circularly move according to the sequence of the loading and unloading station 13, the rough grinding station 11, the fine grinding station 12 and the loading and unloading station 13. In the embodiment, the rotary turntable 2 is adopted for grinding the wafer, full-automatic loading and unloading and continuous grinding and cleaning of the wafer are realized through repeated circulation, and the automatic grinding machine has the advantages of high material removal rate, small damage to the surface of the wafer and easiness in realization of automation.
As shown in fig. 1, the grinding mechanism 3 is composed of a rough grinding portion 31 and a finish grinding portion 32, the rough grinding portion 31 being provided with a rough grinding wheel for rough grinding the wafer, and the finish grinding portion 32 being provided with a finish grinding wheel for finish grinding the wafer. The grinding process is to press the grinding wheel on the surface of the wafer and rotate the grinding wheel to grind off a certain thickness.
The rough grinding section 31 includes a rough grinding wheel of a cup-shaped structure, a rough grinding spindle base, and a rough grinding feed mechanism. The rough grinding wheel is connected to the bottom of the rough grinding spindle so that the rough grinding spindle drives the rough grinding wheel to rotate, the rough grinding wheel rotates and grinds the surface of the wafer, the rough grinding spindle is connected with the rough grinding feeding mechanism through the rough grinding spindle seat to move up and down, and the rough grinding wheel is controlled to approach or move away from the wafer through the rough grinding feeding mechanism so as to carry out axial plunge feeding grinding. In this embodiment, the rough grinding wheel may be a diamond grinding wheel, and the surface thereof is rough to realize rapid wafer grinding, thereby reducing the wafer thinning time. In the rough grinding, the feeding speed of the rough grinding wheel relative to the wafer is 4 to 10 mu m/s so as to realize high-speed feeding, and the rotating speed of the rough grinding wheel is 2000 to 4000 rpm. The radius of the rough grinding wheel is matched with the radius of the wafer, and can be 1 to 1.2 times of the radius of the wafer.
The finish grinding section 32 includes a cup-shaped structure of a finish grinding wheel, a finish grinding spindle block, and a finish grinding feed mechanism. The fine grinding wheel is connected to the bottom of the fine grinding spindle so that the fine grinding spindle drives the fine grinding wheel to rotate, the fine grinding wheel rotates and grinds the surface of the wafer, the fine grinding spindle is connected with the fine grinding feeding mechanism through the fine grinding spindle seat to move up and down, and the fine grinding wheel is controlled to be close to or far away from the wafer through the fine grinding feeding mechanism so as to carry out axial plunge type feeding grinding. In this embodiment, the finish grinding wheel may be a diamond grinding wheel, the surface roughness of which is lower than that of the rough grinding wheel, and serious surface defects and losses may be generated due to the rough grinding to rapidly remove the surface material of the wafer, and the fine surface of the finish grinding wheel is used for low-speed grinding to reduce the thickness of the damaged layer on the surface of the wafer and improve the surface quality of the wafer. In the finish grinding, the feed speed of the finish grinding wheel relative to the wafer is 0.1 to 1 μm/s so as to realize low-speed feed to improve grinding precision, and the rotating speed of the finish grinding wheel is 2000 to 4000 rpm. The radius of the finish grinding wheel matches the radius of the wafer and may be 1 to 1.2 times the radius of the wafer.
The wafer held by the chuck 1 is carried to the rough grinding station 11 below the rough grinding section 31 by rotating the turntable 2 by a predetermined angle, and the back surface of the wafer is roughly ground by the rough grinding wheel in the rough grinding station 11. Then, the wafer is carried to the lapping station 12 below the lapping section 32 by rotating the turntable 2 again by a predetermined angle to perform secondary processing, and the back surface of the wafer is finely lapped by the lapping wheel at the lapping station 12. The back grinding process of the wafer specifically comprises the following steps: the grinding wheel descends through the feeding mechanism and grinding feeding is realized, the sucker 1 rotates to drive the wafer to rotate, and meanwhile, the rotating grinding wheel is pressed against the back of the wafer to grind. During back grinding, the grinding fluid supply device sprays the grinding fluid to the surface of the wafer to assist grinding, and the grinding fluid can be deionized water.
In order to achieve the reduction of the wafer to the target thickness, the wafer thickness is measured during the grinding process by the wafer thickness measuring device 4. As shown in fig. 1, the wafer thickness measuring device 4 is used to perform non-contact measurement of the wafer thickness at the lapping station 12.
As shown in fig. 2 and 3, a wafer thickness measuring apparatus 4 according to an embodiment of the present invention includes a movable support 5 and a measuring body 6 located at a front end of the support 5.
The support 5 comprises a rotary base 51 and a swing arm 52 which is arranged on the rotary base 51 and can horizontally rotate around the central axis of the base 51, and the measuring main body 6 is arranged at the moving end of the swing arm 52 and is downwards arranged to scan the surface of the wafer w and measure the thickness of the wafer w below at a plurality of measuring points.
The measurement body 6 includes: the optical sensor module comprises a load-bearing main structure 7, a liftable suspension structure 8 and an optical sensor module 9, wherein the suspension structure 8 is mounted at the lower part of the main structure 7, the lower part of the main structure 7 is slidably arranged in a groove 81 of the suspension structure 8, a first fluid pipeline 71 leading to the joint of the main structure 7 and the suspension structure 8 is arranged in the main structure 7 and used for filling a first fluid into the groove 81 to lift the suspension structure 8, the main structure 7 is provided with a first through hole 72 penetrating through the upper surface and the lower surface of the main structure and used for accommodating the optical sensor module 9, a second through hole 82 is arranged below the first through hole 72 at the bottom of the groove 81 of the suspension structure 8 so as to pass through a light path 91 output from the bottom end of the, a second fluid conduit 83 is provided in the suspension structure 8 to achieve that the chamber 84 formed by the bottom surface of the body structure 7, the bottom surface of the optical sensor assembly 9, the inner surface of the groove 81 and the second through hole 82 is filled with a second fluid.
Wherein, the movable support 5 is connected with the main structure 7 to support the main structure 7 and drive the measuring main body 6 to move through the main structure 7.
In this embodiment, the wafer thickness measuring device 4 has two states, which are respectively:
1) the lifting state shown in fig. 4: the main body structure 7 is fixed, high-pressure gas or liquid is introduced into the first fluid pipeline 71, the suspension structure 8 is jacked up under the action of air pressure or hydraulic pressure to increase the distance between the bottom surface of the measuring main body 6 and the wafer w, so that barrier-free movement can be realized, and at the moment, the second fluid pipeline 83 is disconnected from fluid supply.
2) Measurement conditions as shown in fig. 5: the main body structure 7 is fixed, the first fluid pipeline 71 is disconnected from fluid supply, at the moment, the suspension structure 8 falls down and is hung on the main body structure 7, high-pressure gas or liquid is introduced into the second fluid pipeline 83, and the gas or liquid flows to the surface of the wafer w through the second through hole 82 to wash away pollutants blocking the optical path 91 from the surface of the wafer w, so that the space where the transmission path of the optical path 91 above the wafer w is located is filled with the same gas or liquid, the optical path 91 is transmitted in the same medium, interference waves formed by reflected light on the upper surface and the lower surface of the wafer w are only related to the thickness of the wafer w, and the thickness measurement accuracy and precision are improved.
The present embodiment controls the suspension structure 8 to switch between the two extreme positions by means of the first fluid line 71 and the second fluid line 83.
The measurement principle of the device is as follows: the measurement optical path 91 of the optical sensor unit 9 irradiates the wafer w with infrared light through the second through hole 82, and calculates the substrate thickness from the different reflected light on the upper and lower surfaces of the wafer w.
According to the embodiment of the invention, the fluid channel is arranged in the measuring light path 91 of the non-contact wafer thickness measuring device 4, so that the measuring light transmission process is not influenced by interference factors such as a liquid film, liquid beads or particles on the surface of the wafer, the effect of the interference factors is eliminated, and the accuracy and precision of the wafer thickness measurement can be effectively improved.
As shown in fig. 4 and 5, the main body structure 7 includes a middle portion 73, an annular upper flange 74 extending outwardly from an upper end of the middle portion 73, and an annular lower flange 75 extending outwardly from a lower end of the middle portion 73, the lower flange 75 being positioned within a slot 81 of the hanging structure 8 to hang the hanging structure 8.
The middle part 73 is provided with a first through hole 72 and a first fluid pipeline 71, the first fluid pipeline 71 is not communicated with the first through hole 72, and an outlet 711 of the first fluid pipeline 71 is arranged at the connecting position of the upper surface of the lower flange 75 and the side surface of the middle part 73.
In one embodiment, as shown, the first fluid pipeline 71 and the first through hole 72 are both arranged in parallel in the vertical direction, the first fluid pipeline 71 is used for injecting a first fluid with high pressure to the suspension structure 8 to lift the suspension structure 8 under the action of fluid pressure, and the first joint 712 of the first fluid pipeline 71 is connected to the upper surface of the main body structure 7.
As shown in fig. 4 and 5, the body structure 7 is further provided with a third seal ring 76 surrounding the outer side surface of the lower flange 75 to achieve an airtight seal when the outer side surface of the lower flange 75 is slidably fitted with the inner side surface of the cylindrical portion 85.
As shown in fig. 4 and 5, the suspension structure 8 includes a cylindrical portion 85 that is open upward and an annular inner flange 86 that extends inward from an upper end of the cylindrical portion 85, and the cylindrical portion 85 and the inner flange 86 constitute the groove 81 to trap the lower flange 75 of the main structure 7 in the groove 81.
In one embodiment, as shown, the bottom edge of the inner flange 86 is provided with an annular recess 87 to facilitate the first fluid ejected from the first fluid conduit 71 to quickly contact and apply upward pressure to the bottom surface of the inner flange 86 to lift the suspension structure 8.
The cylindrical portion 85 is provided with a second through hole 82 and a second fluid line 83, and the second fluid line 83 communicates with the second through hole 82. The second through hole 82 penetrates through the upper and lower surfaces of the bottom wall of the cylindrical portion 85, and the second through hole 82 may be composed of a cylindrical hole and a circular truncated cone-shaped hole located below the cylindrical hole, wherein the diameter of the upper surface of the circular truncated cone-shaped hole is larger than that of the lower surface.
In one embodiment, a second fluid pipeline 83 extending in the horizontal direction is arranged in the bottom wall of the barrel portion 85, an outlet 831 of the second fluid pipeline 83 is arranged on the side wall of the second through hole 82, the second fluid pipeline 83 is used for filling a cavity 84 formed by the bottom surface of the main body structure 7, the bottom surface of the optical sensor assembly 9, the inner surface of the groove 81 and the second through hole 82 with a second fluid, and a second connector 832 of the second fluid pipeline 83 is connected to the outer side surface of the suspension structure 8.
As shown in fig. 4 and 5, the suspension structure 8 is further provided with a first sealing ring 88 around the inner side of the inner flange 86 to achieve an airtight seal when the inner side of the inner flange 86 is in sliding engagement with the outer side of the intermediate portion 73.
As shown in fig. 4 and 5, the suspension structure 8 is further provided with a second seal ring 89 at a position where the cylindrical portion 85 is joined to the inner flange 86.
As shown in fig. 4 and 5, the optical sensor assembly 9 includes an optical sensor 92 that can emit incident light to the surface of the wafer w and receive emitted light reflected from the wafer w, and a transparent barrier 93 located below the optical sensor 92.
A transparent baffle 93 is provided at the bottom end of the first through hole 72 and is hermetically connected to the intermediate portion 73 to prevent the second fluid from entering the first through hole 72 to contaminate the optical sensor 92 accommodated in the first through hole 72. The transparent baffle 93 can be made of transparent materials such as glass, plastic and crystal, so that gas or liquid in the chamber 84 is isolated from the optical sensor 92 while the measurement light path 91 is ensured to be transparent, and the sensor is prevented from being damaged.
The optical sensor 92 is connected to an external laser light source and a measurement and control instrument through optical fibers to realize optical measurement.
As shown in fig. 6, the working process of the grinding machine includes: placing a wafer on a loading and unloading station 13, rotating a turntable 2 by 120 degrees to move the wafer to a rough grinding station 11 for rough grinding until the wafer reaches a first preset thickness to finish rough grinding, introducing high-pressure gas or liquid into a first fluid pipeline 71 to lift a suspension structure 8, rotating the turntable 2 by 120 degrees, moving the wafer to a fine grinding station 12 for first stage fine grinding, performing fine grinding until the wafer reaches a second preset thickness, lifting a fine grinding wheel to stop fine grinding, driving a measuring body 6 to move from an initial position to a position above the wafer along an arc direction by a support 5 of a wafer thickness measuring device 4, introducing high-pressure gas or liquid into a second fluid pipeline 83, closing the first fluid pipeline 71 to enable the suspension structure 8 to fall down, driving the measuring body 6 to move from the edge of the wafer to a position close to the center along the arc direction by the support 5 to collect thickness data at a plurality of measuring points, closing the second fluid pipeline 83 after thickness measurement is finished, and introducing high-pressure gas or liquid into the first fluid pipeline 71 to lift the suspension And the hanging structure 8 moves the measuring body 6 back to the initial position, fine grinding parameters are adjusted, second-stage fine grinding is carried out, finish grinding is carried out until the wafer reaches a third preset thickness, then the fine grinding wheel is lifted up to finish the grinding process, the rotary table rotates by 120 degrees or rotates by 240 degrees in a reverse mode to enable the wafer to be moved to a loading and unloading station 13, the wafer and the sucker 1 are cleaned, and the wafer is taken away after the cleaning is finished.
The lifting state of the wafer thickness measuring device 4 is suitable for the coarse and fine grinding conversion process of the turntable 2, the bottom surface of the device is lifted properly, the distance between the bottom surface and the wafer is increased, and the risk of touch interference between the bottom surface and the wafer in the rotation process is reduced.
The measurement state is used to perform an in-situ measurement of the wafer thickness while the finish grinding process is suspended, at which time the bottom surface of the apparatus is lowered to shorten the distance to the wafer and the chamber 84 is filled with a second fluid to form a stable flow field environment to improve the measurement accuracy.
In summary, in the embodiment of the present invention, the gas or liquid channel disposed in the chamber 84 where the measurement optical path 91 is located eliminates the interference of the contaminants such as the liquid film, liquid beads, and particles on the surface of the wafer on the measurement precision and stability, so as to improve the measurement precision. In addition, the suspension structure 8 has two limit states, the lifting state can effectively avoid the risk of collision between the measuring device and the components such as the sucker 1, the turntable 2 or the wafer, the measuring state can ensure that the measuring optical path 91 is in a stable gas or liquid environment, the distance between the optical sensor 92 and the wafer is kept unchanged, the position of the optical sensor 92 is fixed, and therefore measuring interference caused by vibration can be avoided.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of respective portions and their mutual relationships. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly show the structure of the elements of the embodiments of the invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A wafer thickness measuring device, comprising: the major structure, liftable suspended structure and optical sensor subassembly, the suspended structure carries in the major structure lower part, major structure lower part slidable ground sets up in suspended structure's inslot, be equipped with the first fluid pipeline that accesss to major structure and suspended structure's handing-over department in the major structure and be used for filling into first fluid in order to promote this suspended structure to this inslot, the major structure is equipped with and runs through it, the first through-hole that is used for holding optical sensor subassembly of lower surface, suspended structure's tank bottom is equipped with the second through-hole in first through-hole below in order to pass through the light path by optical sensor subassembly output, be equipped with second fluid pipeline in the suspended structure in order to realize by the major structure bottom surface, optical sensor subassembly bottom surface, be filled with the second fluid in the cavity that groove inner face and second through.
2. The wafer thickness measuring device of claim 1, wherein the body structure includes a middle portion, an annular upper flange extending outwardly from an upper end of the middle portion, and an annular lower flange extending outwardly from a lower end of the middle portion, the lower flange being positioned within the slot of the suspension structure to overhang the suspension structure.
3. The wafer thickness measuring apparatus according to claim 2, wherein the middle portion is provided with a first through hole and a first fluid line, the first fluid line is not communicated with the first through hole, and an outlet of the first fluid line is provided at a junction of the upper surface of the lower flange and the side surface of the middle portion.
4. The wafer thickness measuring apparatus of claim 1, wherein the suspension structure includes an upwardly open barrel and an annular inner flange extending inwardly from an upper end of the barrel, the barrel and inner flange defining the slot to retain the lower flange of the body structure within the slot.
5. The wafer thickness measuring apparatus according to claim 4, wherein the barrel portion is provided with a second through hole and a second fluid line, the second fluid line communicating with the second through hole.
6. The wafer thickness measuring device of claim 1, wherein the optical sensor assembly includes an optical sensor and a transparent baffle below the optical sensor.
7. The wafer thickness measuring device of claim 4, wherein the suspension structure is further provided with a first sealing ring surrounding an inner side surface of the inner flange to achieve a hermetic seal when the inner side surface of the inner flange is in sliding engagement with an outer side surface of the intermediate portion.
8. The wafer thickness measuring device of claim 2, wherein the body structure is further provided with a third seal ring surrounding the outer side surface of the lower flange to effect a hermetic seal when the outer side surface of the lower flange is in sliding engagement with the inner side surface of the barrel.
9. The wafer thickness measurement device of claim 1, further comprising a movable support coupled to the body structure.
10. A grinding machine table, comprising:
the grinding mechanism is used for enabling the grinding wheel to abut against the wafer so as to grind and thin the wafer;
the sucking disc is used for holding the wafer and driving the wafer to rotate;
the rotary table is used for bearing a preset number of the suckers and driving all the suckers to integrally rotate;
wherein the turntable is provided with a wafer thickness measuring device as claimed in claims 1 to 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023197157A1 (en) * | 2022-04-12 | 2023-10-19 | 华为技术有限公司 | Sensor, detection device and detection system |
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| CN110695849B (en) | 2020-09-15 |
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