CN110690122B - Processing method of metal shell for packaging electronic component - Google Patents
Processing method of metal shell for packaging electronic component Download PDFInfo
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- CN110690122B CN110690122B CN201910969236.9A CN201910969236A CN110690122B CN 110690122 B CN110690122 B CN 110690122B CN 201910969236 A CN201910969236 A CN 201910969236A CN 110690122 B CN110690122 B CN 110690122B
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- sink plate
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- 239000002184 metal Substances 0.000 title claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 53
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 10
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 154
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 152
- 229910052802 copper Inorganic materials 0.000 claims abstract description 152
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 117
- 239000010432 diamond Substances 0.000 claims abstract description 117
- 229910000679 solder Inorganic materials 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 238000003801 milling Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 230000017525 heat dissipation Effects 0.000 abstract description 24
- 239000000463 material Substances 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a processing method of a metal shell for packaging an electronic component, which comprises the following steps: processing the shell body to enable the chassis to form a through hole embedded in the diamond copper heat sink plate; placing the surface of the metal shell with the chassis upwards, enabling the lower surface of the diamond copper heat sink plate to be flush with the lower surface of the chassis, and enabling part of the metal layer on the upper part of the diamond copper heat sink plate to protrude upwards out of the through hole to form a part to be processed, which is higher than the upper surface of the chassis; placing solder at the joint of the diamond copper heat sink plate and the chassis, and sintering at high temperature to integrate the diamond copper heat sink plate and the chassis; removing a part to be processed of the diamond copper heat sink plate to form a processing surface which is flush with the upper surface of the chassis; the diamond copper clad copper material is used as a heat dissipation material to meet the heat dissipation requirement of a high-power tube shell, the flatness of the outer bottom surface can be guaranteed by using the processing method, and the heat dissipation performance of the electronic component packaging shell is improved.
Description
Technical Field
The invention relates to the technical field of packaging shells, in particular to a processing method of a metal shell for packaging an electronic component.
Background
Along with the rapid development of electronic technology, the electronic equipment is updated and accelerated, the product integration degree is higher and higher, the power density of electronic components is increased, the heat generated by work is increased, the performance and the service life of the components are greatly influenced, and the reduction of the working temperature of the components is very important for ensuring the stable work of the components.
Because the high-power tube shell usually needs local heat dissipation, a high-heat-conduction material is adopted as a heat sink substrate in an area needing heat dissipation to ensure the heat dissipation capability, and in the prior art, although the thermal expansion of materials such as W/Cu, Mo/Cu, SiC/Al and the like is matched with a semiconductor, the thermal conductivity is lower than 300W/(m.K), and the high-heat-conduction requirement cannot be met.
When the heat dissipation material is applied to a substrate material of an electronic packaging shell, the brazing positioning problem with a chassis exists, due to the existence of accumulated tolerance of a positioning die, the chassis and a heat sink substrate, the heat sink substrate is protruded or recessed into the outer bottom surface of the chassis, the flatness cannot meet the requirement, the installation and positioning of the whole tube shell are affected, and a gap exists between the heat sink substrate and an external heat dissipation module, so that the heat dissipation capability is affected.
Disclosure of Invention
In order to solve the technical problems, the invention provides a processing method of a metal shell for packaging an electronic component, wherein a diamond copper-clad material is used as a heat dissipation material to meet the heat dissipation requirement of a high-power tube shell.
In order to solve the technical problems, the invention adopts the following technical scheme:
a processing method of a metal shell for packaging electronic components is provided, the metal shell comprises a shell body and a diamond copper heat sink plate embedded in a chassis of the shell body, the electronic components are mounted on the diamond copper heat sink plate, and the processing of the metal shell comprises the following steps:
1) processing the shell body to enable the chassis to form a through hole embedded in the diamond copper heat sink plate;
2) placing the surface of the metal shell with the chassis upwards, enabling the lower surface of the diamond copper heat sink plate to be flush with the lower surface of the chassis, and enabling part of the metal layer on the upper part of the diamond copper heat sink plate to protrude upwards out of the through hole to form a part to be processed, which is higher than the upper surface of the chassis;
3) placing solder at the joint of the diamond copper heat sink plate and the chassis, and sintering at high temperature to integrate the diamond copper heat sink plate and the chassis;
4) and removing the part to be processed of the diamond copper heat sink plate to form a processing surface which is flush with the upper surface of the chassis.
And further, when the part to be processed of the diamond copper hot-dip plate is removed, a milling mode is used for removing.
Further, the diamond copper heat sink plate is formed by coating copper metal on the surface of the diamond copper, the diamond copper heat sink plate comprises an upper copper layer positioned on the upper part of the diamond copper and a lower copper layer positioned on the lower part of the diamond copper, and the upper copper layer and the lower copper layer are oxygen-free layers.
Further, the diamond copper is a mixture of copper metal and diamond, and the mass of the diamond accounts for 60% -70% of that of the diamond copper; the size of the diamond particles is 80-110 μm, and the diamond particles and the copper are uniformly distributed.
Further, the thickness of the upper copper layer and the lower copper layer is 0.25 mm-0.30 mm, the thickness of the diamond copper is at least 1mm, and when the lower surface of the diamond copper heat sink plate is flush with the lower surface of the chassis, the thickness of the surface to be processed, protruding upwards from the through hole, of the upper portion of the diamond copper heat sink plate is 0.1 mm-0.2 mm.
Furthermore, a fit clearance of 0.05mm is reserved between the diamond copper heat sink plate and the wall of the through hole, and solder is placed at the fit clearance.
Compared with the prior art, the invention has the beneficial technical effects that:
1. the diamond copper coated copper metal is used as a heat dissipation material to meet the heat dissipation requirement of a high-power tube shell, the flatness of the outer bottom surface of the metal shell can be guaranteed by the processing method, the heat dissipation material on the metal shell can be well attached to an external heat dissipation module, and the heat dissipation performance and the attractiveness of the electronic component packaging shell are improved.
Drawings
FIG. 1 is a schematic flow diagram of a process of the present invention;
FIG. 2 is a schematic structural view of a metal housing according to the present invention;
FIG. 3 is a schematic structural view of a diamond copper heat sink plate according to the present invention;
FIG. 4 is a schematic structural diagram of the positioning die for positioning the diamond copper hot-dip plate according to the present invention;
FIG. 5 is a schematic structural view of a positioning mold according to the present invention;
FIG. 6 is a schematic view of the structure of the processing surface of the present invention.
Detailed Description
A preferred embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, a method for processing a metal shell for encapsulating electronic components, the metal shell comprising a shell body 10 and a diamond copper heat sink plate embedded in a chassis 11 of the shell body, the electronic components being mounted on the diamond copper heat sink plate, the processing of the metal shell comprising the following steps:
s1: the shell body is processed, and a through hole 12 embedded with a diamond copper heat sink plate is formed on the chassis.
S2: the side of the metal shell with the base plate is placed upwards, the lower surface of the diamond copper heat sink plate is flush with the lower surface of the base plate 11, and part of the metal layer on the upper part of the diamond copper heat sink plate protrudes upwards out of the through hole to form a part to be processed 44 higher than the upper surface of the base plate.
Specifically, the diamond copper heat sink plate is formed by coating copper metal on the surface of diamond copper, and comprises an upper copper layer positioned on the upper part of the diamond copper and a lower copper layer positioned on the lower part of the diamond copper, wherein the upper copper layer and the lower copper layer are oxygen-free layers.
Specifically, the diamond copper is a mixture of copper metal and diamond, and the volume of the diamond accounts for 60-70% of the volume of the diamond copper; the size of the diamond particles is 80-110 μm, and the diamond particles and the copper are uniformly distributed; too large or too small diamond particles and too large or too small volume fractions of diamond have a negative effect on the heat dissipation of diamond copper.
Specifically, the thickness of the upper copper layer and the lower copper layer is 0.25 mm-0.30 mm, the thickness of the diamond copper is at least 1mm, and when the lower surface of the diamond copper heat sink plate is flush with the lower surface of the chassis, the thickness of the surface to be processed, protruding upwards from the through hole, of the upper portion of the diamond copper heat sink plate is 0.1 mm-0.2 mm; when the diamond copper surface is coated with copper, high temperature and high pressure are adopted, so that no gap between the surface copper layer and the diamond copper is ensured, and the thermal conductivity is improved; and polishing the surface of the diamond copper heat-sink plate by using a grinding machine after copper is coated, wherein the surface roughness of the diamond copper heat-sink plate reaches 1.6 mu m, and the surface flatness is less than or equal to 0.03.
S3: and (3) placing the solder at the joint of the diamond copper heat sink plate and the chassis, and sintering at high temperature to form the diamond copper heat sink plate and the chassis into a whole.
Specifically, a fit clearance of 0.05mm is reserved between the diamond copper heat sink plate and the wall of the through hole, and solder is placed at the fit clearance; the solder is melted at high temperature, the flowing of the solder in the fit clearance is realized by the capillary action, the smaller the fit clearance is, the stronger the capillary action is, and the best welding effect is realized by taking the fit clearance to be 0.05mm in consideration of the influence of processing errors on the fit.
S4: removing a part to be processed of the diamond copper heat sink plate to form a processing surface 45 which is flush with the upper surface of the chassis; and ensuring that the integral flatness of the processing surface and the upper surface of the chassis is less than or equal to 0.02.
Specifically, when the part to be processed of the diamond copper heat sink plate is removed, a milling processing mode is used for removing.
Because the high-power tube shell usually needs local heat dissipation, a high-heat-conduction material is adopted as a heat sink substrate in an area needing heat dissipation to ensure the heat dissipation capability, and in the prior art, although the thermal expansion of materials such as W/Cu, Mo/Cu, SiC/Al and the like is matched with a semiconductor, the thermal conductivity is lower than 300W/(m.K), and the high-heat-conduction requirement cannot be met.
When the heat dissipation material is applied to a substrate material of an electronic packaging shell, the heat sink substrate is protruded or recessed from the outer bottom surface of the chassis due to the existence of accumulated tolerance of the positioning die, the chassis and the heat sink substrate, the flatness of the bottom surface cannot meet the requirement, and if the bottom surface is protruded, the installation and positioning of the whole tube shell are influenced, so that a gap exists between the heat sink substrate and an external heat dissipation module, and the heat dissipation capability is influenced.
As shown in fig. 2, in this embodiment, the metal shell is a shell, the interior of the shell is hollow, the shape of the exterior of the shell is approximately rectangular, one side of the metal shell is a base plate 11, a through hole 12 is formed in the base plate, the through hole is used for placing a diamond copper heat sink plate, and the diamond copper heat sink plate and the base plate are sintered into a whole through solder; the electronic component is arranged in the shell and is arranged on the diamond copper heat sink plate.
As shown in fig. 3-5, the side of the metal shell far from the chassis is an open structure, when the diamond copper heat sink plate and the chassis are sintered into a whole, one side of the chassis is placed upwards, the side opposite to the chassis extends into the positioning mould, the positioning surface 32 of the positioning mould is a plane, the positioning surface simultaneously props against the lower surface of the diamond copper heat sink plate and the lower surface of the chassis 11, the lower surface of the diamond copper heat sink plate and the lower surface of the chassis are coplanar, and part of the metal layer on the upper part of the diamond copper heat sink plate protrudes out of the through hole to form a part to be processed 44 higher than the upper surface of the chassis.
As shown in fig. 3, the diamond copper heat sink plate is made by coating a copper metal on the surface of diamond copper, and includes an upper copper layer 41 on the upper portion of diamond copper 42, a lower copper layer 43 on the lower portion of diamond copper, and the upper and lower copper layers are oxygen-free layers; in order to ensure that the part to be processed is removed by milling without damaging the internal diamond copper structure, the part to be processed is made of copper, and in order to ensure the smoothness of the internal diamond copper surface, after the part to be processed is removed, part of copper metal is required to be left on the upper part of the diamond copper, namely, the thickness of the upper copper layer is required to be greater than that of the part to be processed.
In order to realize the functional structure, the sizes of the metal shell, the positioning die and the diamond copper heat sink are specially designed.
As shown in fig. 5, the positioning mold includes a supporting plate 31 and a positioning block 33 fixedly arranged on the upper portion of the supporting plate, one end of the positioning block, which is far away from the supporting plate, is provided with a positioning surface 32, in order to ensure stability during positioning, the width of the supporting plate is greater than the width of the positioning block and the width of the metal shell, the height of the positioning block is H3, when the positioning block is inserted into the metal shell for positioning, the supporting plate has a larger width and cannot enter the metal shell, when the positioning surface abuts against the lower surface of the chassis, the distance from the upper surface of the supporting plate to the lower end surface of the metal shell is H6, in consideration of machining errors and positioning stability of the positioning mold, H6 is 0.5mm, the vertical height of the inner space of the metal shell is H2, and H539; in order to ensure the positioning function of the positioning die, the requirements during size design are met: H3-H2 + H6-H2 +0.5 mm.
The diamond copper heat sink plate is made by coating copper metal on the surface of diamond copper 42, and comprises an upper copper layer 41 positioned on the upper part of the diamond copper and a lower copper layer 43 positioned on the lower part of the diamond copper, wherein the upper copper layer and the lower copper layer are oxygen-free layers; the thickness of diamond copper heat sink plate is H5, and the thickness of chassis 11 is H1, considers the machining precision of milling, and the error when diamond copper surface copper metal that covers, needs diamond copper heat sink plate thickness slightly to be greater than chassis thickness to in the follow-up milling of carrying out, in this embodiment: h5 ═ H1+ (0.1-0.2) mm, wherein the chassis thickness H1 is a known amount at design time; in order to ensure the heat dissipation effect, the thickness of the diamond copper is at least 1 mm; the thickness of going up copper layer and copper layer down is H4, in order to guarantee that the portion of waiting to process can not destroy inside diamond copper structure when being milled the processing and get rid of, the portion of waiting to process needs to be copper metal and constitutes, and in order to guarantee the planarization on inside diamond copper surface, the portion copper metal still need be left on diamond copper upper portion after the portion of waiting to process is got rid of, and the thickness of going up the copper layer needs to be greater than the thickness of the portion of waiting to process promptly, and the value of H4 is 0.25mm ~ 0.30mm in this embodiment.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (5)
1. A processing method of a metal shell for packaging electronic components is characterized in that: the diamond copper that imbeds on metal casing includes shell body and shell body's the chassis sinks the board, electronic components installs on diamond copper sinks the board, metal casing's processing includes following steps:
1) processing the shell body to enable the chassis to form a through hole embedded in the diamond copper heat sink plate;
2) placing the surface of the metal shell with the chassis upwards, enabling the lower surface of the diamond copper heat sink plate to be flush with the lower surface of the chassis, and enabling part of the metal layer on the upper part of the diamond copper heat sink plate to protrude upwards out of the through hole to form a part to be processed, which is higher than the upper surface of the chassis;
3) placing solder at the joint of the diamond copper heat sink plate and the chassis, and sintering at high temperature to integrate the diamond copper heat sink plate and the chassis;
4) removing a part to be processed of the diamond copper heat sink plate to form a processing surface which is flush with the upper surface of the chassis;
forming the diamond copper heat sink plate by coating copper metal on the surface of diamond copper, wherein the diamond copper heat sink plate comprises an upper copper layer positioned on the upper part of the diamond copper and a lower copper layer positioned on the lower part of the diamond copper, and the upper copper layer and the lower copper layer are oxygen-free layers;
the diamond copper is a mixture of copper metal and diamond particles.
2. A method for manufacturing a metal case for enclosing an electronic component as claimed in claim 1, wherein: and when the part to be processed of the diamond copper hot-dip plate is removed, removing the part by using a milling processing mode.
3. A method for manufacturing a metal case for enclosing an electronic component as claimed in claim 1, wherein: the diamond copper is a mixture of copper metal and diamond, and the mass of the diamond accounts for 60-70% of that of the diamond copper; the size of the diamond particles is 80-110 μm, and the diamond particles and the copper are uniformly distributed.
4. A method for manufacturing a metal case for enclosing an electronic component as claimed in claim 1, wherein: the thickness of the upper copper layer and the lower copper layer is 0.25 mm-0.30 mm, the thickness of the diamond copper is at least 1mm, and when the lower surface of the diamond copper heat sink plate is flush with the lower surface of the chassis, the thickness of the surface to be processed, protruding upwards from the upper portion of the diamond copper heat sink plate, of the through hole is 0.1 mm-0.2 mm.
5. A method for manufacturing a metal case for enclosing an electronic component as claimed in claim 1, wherein: and a 0.05mm fit clearance is reserved between the diamond copper heat sink plate and the wall of the through hole, and solder is placed in the fit clearance.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910969236.9A CN110690122B (en) | 2019-10-12 | 2019-10-12 | Processing method of metal shell for packaging electronic component |
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| CN201910969236.9A CN110690122B (en) | 2019-10-12 | 2019-10-12 | Processing method of metal shell for packaging electronic component |
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| CN110690122B true CN110690122B (en) | 2021-01-29 |
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| CN114540765A (en) * | 2020-11-25 | 2022-05-27 | 有研工程技术研究院有限公司 | Diamond/copper composite material heat sink coated with metal titanium-copper layer and preparation method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0645816A1 (en) * | 1993-09-29 | 1995-03-29 | Fuji Electric Co. Ltd. | Semiconductor device comprising a plurality of semiconductor elements |
| JP2001313345A (en) * | 2000-04-28 | 2001-11-09 | Kyocera Corp | Package for accommodating semiconductor device |
| CN1753608A (en) * | 2004-09-21 | 2006-03-29 | 朗迅科技公司 | Heat-transfer devices |
| CN101567343A (en) * | 2008-04-23 | 2009-10-28 | 张朝江 | Cooling plate structure for flip-chip packaging and manufacturing method thereof |
| CN102026496A (en) * | 2010-12-24 | 2011-04-20 | 乐健线路板（珠海）有限公司 | Method for preparing printed circuit board with insulated micro radiator |
| CN205303452U (en) * | 2015-12-01 | 2016-06-08 | 中国电子科技集团公司第五十五研究所 | Heat sink material of diamond copper |
| CN106486427A (en) * | 2016-11-21 | 2017-03-08 | 成都嘉纳海威科技有限责任公司 | A kind of package casing based on LCP substrate and preparation method |
| CN109712936A (en) * | 2017-10-26 | 2019-05-03 | Qorvo美国公司 | Substrate with embedded type active thermoelectric (al) cooler |
| CN110071071A (en) * | 2018-01-23 | 2019-07-30 | 三菱电机株式会社 | The manufacturing method of semiconductor device and semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5155890B2 (en) * | 2008-06-12 | 2013-03-06 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
| CN205231041U (en) * | 2015-12-25 | 2016-05-11 | 合肥伊丰电子封装有限公司 | Electronic packaging shell is heat sink to weld bear building -up structure |
-
2019
- 2019-10-12 CN CN201910969236.9A patent/CN110690122B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0645816A1 (en) * | 1993-09-29 | 1995-03-29 | Fuji Electric Co. Ltd. | Semiconductor device comprising a plurality of semiconductor elements |
| JP2001313345A (en) * | 2000-04-28 | 2001-11-09 | Kyocera Corp | Package for accommodating semiconductor device |
| CN1753608A (en) * | 2004-09-21 | 2006-03-29 | 朗迅科技公司 | Heat-transfer devices |
| CN101567343A (en) * | 2008-04-23 | 2009-10-28 | 张朝江 | Cooling plate structure for flip-chip packaging and manufacturing method thereof |
| CN102026496A (en) * | 2010-12-24 | 2011-04-20 | 乐健线路板（珠海）有限公司 | Method for preparing printed circuit board with insulated micro radiator |
| CN205303452U (en) * | 2015-12-01 | 2016-06-08 | 中国电子科技集团公司第五十五研究所 | Heat sink material of diamond copper |
| CN106486427A (en) * | 2016-11-21 | 2017-03-08 | 成都嘉纳海威科技有限责任公司 | A kind of package casing based on LCP substrate and preparation method |
| CN109712936A (en) * | 2017-10-26 | 2019-05-03 | Qorvo美国公司 | Substrate with embedded type active thermoelectric (al) cooler |
| CN110071071A (en) * | 2018-01-23 | 2019-07-30 | 三菱电机株式会社 | The manufacturing method of semiconductor device and semiconductor device |
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