CN110687068A - Infrared detector and infrared gas sensor - Google Patents
Infrared detector and infrared gas sensor Download PDFInfo
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- CN110687068A CN110687068A CN201910875694.6A CN201910875694A CN110687068A CN 110687068 A CN110687068 A CN 110687068A CN 201910875694 A CN201910875694 A CN 201910875694A CN 110687068 A CN110687068 A CN 110687068A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- G—PHYSICS
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Abstract
The invention relates to the field of infrared detection, in particular to an infrared detector and an infrared gas sensor, which comprise: the filtering structure is used for filtering infrared light, so that the infrared light with at least one preset wavelength passes through the filtering structure; the detection chip is used for converting the infrared light with at least one preset wavelength into an electric signal; wherein, the filtering structure is a metamaterial filtering structure. The infrared detector adopts the metamaterial as a filtering structure, and by designing the structure and the parameters of the metamaterial, infrared light filtered by the metamaterial corresponds to a plurality of infrared characteristic absorption peaks of gas to be detected, and the detector chip converts optical signals of wavelengths corresponding to the infrared characteristic absorption peaks of the gas to be detected into electric signals, so that the intensity of the signals is enhanced, and the accuracy and the gas identification capability of the infrared gas sensor are improved.
Description
Technical Field
The invention relates to the field of infrared detection, in particular to an infrared detector and an infrared gas sensor.
Background
With the development of economy and the improvement of environmental awareness of people, the application of the gas sensor is more and more extensive. The infrared gas sensor has received wide attention from people due to its characteristics of high precision, high stability and the like. An infrared gas sensor is a gas sensing device which selects absorption characteristics based on infrared spectra of different gas molecules, and utilizes the relation (Lambert-Beer law) of gas concentration and absorption intensity to identify gas components and determine the concentration of the gas components. Compared with other gas sensors such as electrochemical type, catalytic combustion type, semiconductor type and the like, the gas sensor has a series of advantages of wide application, long service life, high sensitivity, good stability, more suitable gases, high cost performance, low maintenance cost, capability of on-line analysis and the like. The method is widely applied to the fields of petrochemical industry, metallurgical industry, industrial and mining exploitation, air pollution detection, agriculture, medical treatment and health and the like.
The typical design of current infrared gas sensors is: the broadband infrared light source + the optical air chamber + the infrared detector + the related matching circuit. If the infrared detector is designed in a single channel, the infrared detector consists of a group of detector chips and an optical filter, and the optical filter corresponds to the wavelength of the gas to be detected. If the infrared detector is designed to be a dual-channel infrared detector, the infrared detector consists of two groups of detector chips and optical filters, wherein one group of optical filters corresponds to the wavelength of the measured gas, and the other group of optical filters corresponds to the wavelength without infrared absorption and is used for compensating the sensor signals.
The design is limited by the complicated coating process of the optical filter, and the simultaneous passing of a plurality of wavelengths cannot be realized, so that the output signal of the detector is relatively weak, and the detection of the gas with small infrared absorption coefficient is not facilitated.
Disclosure of Invention
The invention aims to solve the technical problems of weak output signal and poor detection precision of the existing infrared detector.
In order to solve the above technical problem, in a first aspect, an embodiment of the present application discloses an infrared detector, including:
the filtering structure is used for filtering infrared light, so that the infrared light with at least one preset wavelength passes through the filtering structure;
the detection chip is used for converting the infrared light with at least one preset wavelength into an electric signal;
wherein, the filtering structure is a metamaterial filtering structure.
Furthermore, the metamaterial filtering structure is a metal layer-dielectric layer-metal layer structure.
Further, the output signal of the detection chip is the sum of the electric signals converted by the detection chip via at least 1 infrared light with preset wavelength passing through the metamaterial filtering structure.
Further, the detection chip is any one of a thermopile chip, a pyroelectric chip and a photoelectric chip.
In a second aspect, an embodiment of the present application discloses an infrared gas sensor, including: the infrared detector is arranged at the other end of the optical air chamber;
wherein, the infrared detector is the infrared detector as described above.
Further, the infrared light source is a broadband infrared light source.
Furthermore, the infrared gas sensor also comprises a matching circuit, the matching circuit is respectively connected with the infrared light source and the infrared detector, and the matching circuit is used for modulating the infrared light source, amplifying signals, collecting and processing the signals.
Further, the support circuit comprises a light source modulation module, and the light source modulation module is used for electrically modulating the infrared light source.
Further, the support circuit comprises a signal processing module, and the signal processing module is used for processing the electric signal.
Further, the signal processing module is used for calculating the concentration of the gas to be measured according to the electric signal.
Furthermore, the matching circuit further comprises a communication display module, and the communication display module is used for displaying the concentration of the gas to be detected.
By adopting the technical scheme, the infrared detector and the infrared gas sensor have the following beneficial effects:
the infrared detector adopts the metamaterial as a filtering structure, and by designing the structure and the parameters of the metamaterial, infrared light filtered by the metamaterial corresponds to a plurality of infrared characteristic absorption peaks of gas to be detected, and the detection chip converts optical signals with wavelengths corresponding to the infrared characteristic absorption peaks of the gas to be detected into electric signals, so that the intensity of the signals is enhanced, and the detection precision and the gas identification capability are improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an infrared detector according to an embodiment of the present application;
FIG. 2 is a schematic diagram of an infrared gas sensor according to an embodiment of the present application;
the following is a supplementary description of the drawings:
2-an infrared light source; 3-an optical gas cell; 4-a support circuit; 10-detecting the chip; 11-a substrate layer; 12-a support layer; 13-a thermopile layer; 14-an insulating layer; 20-metamaterial filter structures; 21-a reflective layer; 22-a dielectric layer; 23-array structure layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the present application. In the description of the present application, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein.
The existing infrared gas sensor is limited by a complex coating process of an optical filter, and can not realize simultaneous passing of a plurality of wavelengths, so that the output signal of a detector is relatively weak, and the detection of gas with small infrared absorption coefficient is not facilitated.
As shown in fig. 1, an embodiment of the present application provides an infrared detector, including: the filtering structure is used for filtering infrared light, so that the infrared light with at least one preset wavelength passes through the filtering structure; the detection chip 10 is used for converting at least one section of infrared light with preset wavelength into an electric signal; wherein, the filtering structure is a metamaterial filtering structure 20.
In the embodiment of the application, the infrared detector comprises a detection chip 10 and a metamaterial filtering structure 20, and the wavelength of infrared light filtered by the metamaterial structure corresponds to a plurality of infrared characteristic absorption peaks of a substance to be detected by controlling the structure and parameters of the metamaterial. Optionally, according to the infrared characteristic absorption spectrum of the substance to be detected, the metamaterial filtering structure 20 is designed for the infrared characteristic absorption center wavelength of the substance to be detected, so that a plurality of infrared characteristic absorption peaks of the gas to be detected pass through.
The detection chip 10 converts the optical signals with the wavelengths corresponding to the multiple infrared characteristic absorption peaks of the substance to be detected into electrical signals, so that the intensity of the signals can be enhanced, and the detection precision of the infrared detector can be improved. The infrared detector has high detection precision and gas identification capability, can be suitable for various infrared detection devices, and can be widely applied to gas detection in various occasions.
The metamaterial filtering structure 20 is a metal layer-dielectric layer 22-metal layer structure.
In the embodiment of the application, the metamaterial filter structure 20 is a Metal-dielectric layer 22-Metal M-I-M, Metal-Insulator-Metal structure, a bottom Metal is used as the reflective layer 21, and optionally, the reflective layer 21 may be made of metals such as Au, Ag, Al, and the like; the intermediate layer is used as the dielectric layer 22, and optionally, the dielectric layer 22 may be made of Si3N4、SiO2、Si3N4/SiO2Etc.; the top layer metal is used as the array structure layer 23, and optionally, the array structure layer 23 may be made of metals such as Au, Ag, Al, and the like.
The output signal of the detection chip 10 is the sum of the electrical signals converted by the detection chip 10 via the infrared light with at least 1 preset wavelength passing through the metamaterial filtering structure 20.
In the embodiment of the application, infrared light emitted by the infrared light source 2 reaches the surface of the infrared detector after being transmitted through the optical air chamber 3, is filtered by the metamaterial filter structure 20 on the surface of the infrared detector, infrared light with a plurality of specific wavelengths is transmitted to the detection chip 10, and the detection chip 10 converts the infrared light with the plurality of wavelengths into electric signals to be output in a superposition manner.
The detection chip 10 is any one of a thermopile chip, a pyroelectric chip, and a photoelectric chip.
In the embodiment of the present application, the detection chip 10 may be any chip capable of being applied to the infrared detection field, such as a thermopile, a pyroelectric chip, and a photoelectric chip.
In the embodiment of the present application, the infrared detector includes a detection chip 10 and a metamaterial filter structure 20, and since the manufacturing process of the metamaterial is identical to the manufacturing process of the integrated circuit chip, the infrared detector can be manufactured by the following steps:
s10: manufacturing a detection chip 10; depositing a composite support film on the substrate layer 11 as a support layer 12, optionally, the support layer 12 is made of Si3N4、SiO2、Si3N4/SiO2And the like. After the deposition of the support layer 12 is completed, the thermopile layer 13 is deposited on the support layer 12, and optionally, thermocouple strips are fabricated on the above-described support film.
S20: manufacturing an insulating layer 14; depositing an insulating layer 14 on the thermopile layer 13, wherein the insulating layer 14 covers the thermopile layer 13, and optionally, the insulating layer 14 may be made of Al2O3、Si3N4、SiO2、Si3N4/SiO2Etc., the thickness of the insulating layer 14 is 50nm to 300 nm.
S30: manufacturing a metamaterial structure; a reflecting layer 21 is sputtered on the insulating layer 14, and optionally, the reflecting layer 21 is made of Au, Ag, Al, etc. and is deposited to a thickness of 50nm-300 nm. The deposition method comprises electron beam evaporation, magnetron sputtering, atomic layer deposition and the like. Depositing a layer of SiO on the reflecting layer 212The dielectric layer 22 is, optionally, Si as the material of the dielectric layer 223N4、SiO2、Si3N4/SiO2And the deposition thickness is 50nm-300 nm. Sputtering an array structure layer 23 on the dielectric layer 22, wherein the thickness, shape, size and array period of the deposited metal layer are designed according to the actual wavelength transmission requirement, such as detecting SO2Infrared detector of (2) because of SO2The infrared absorption peak of the gas is 4.0 μm and 7.3 μm, so that the metamaterial filter structure 20 with the central wavelength of 7.3 μm is designed to be transmitted, optionally, an Au disc is deposited on the dielectric layer 22 to serve as an array structure layer 23, optionally, the deposition thickness is 150nm to 250nm, the diameter of the disc is 1.0 μm to 2.5 μm, and the array period of the disc is 5 μm to 7 μmm。
S40: releasing the structure; dry etching or wet etching is selected for the structure, and optionally reactive ion beam etching is selected; optionally, TMAH solution or KOH solution is used for corrosion.
As shown in fig. 2, an embodiment of the present application discloses an infrared gas sensor, including: the device comprises an infrared light source 2, an optical air chamber 3 and an infrared detector, wherein the infrared light source 2 is arranged at one end of the optical air chamber 3, and the infrared detector is arranged at the other end of the optical air chamber 3; wherein, the infrared detector is the infrared detector as described above.
In the embodiment of the present application, the infrared gas sensor includes an infrared detector, and please refer to all the ways of the infrared detector described above regarding the specific implementation of the infrared detector. The embodiment of the application provides an infrared gas sensor, the filtering structure of which is a metamaterial filtering structure 20, so that the wavelengths of infrared light filtered by the metamaterial structure correspond to a plurality of infrared characteristic absorption peaks of gas to be measured. The absorption detection of a plurality of characteristic wavelengths is realized, and the detection precision and the gas identification capability of the infrared gas sensor are improved.
The infrared light source 2 is a broadband infrared light source 2.
In the embodiment of the application, the infrared light source 2 is a wide-spectrum infrared light source 2, and optionally, the infrared light source 2 is an incandescent lamp, an MEMS light source, or the like. The infrared light emitted by the infrared light source 2 passes through the optical air chamber 3, the gas in the optical air chamber 3 has an absorption effect on the infrared light, the infrared light absorbed by the gas reaches the metamaterial filtering structure 20, and the optical signal corresponding to the transmission wavelength is converted into an electric signal through filtering by the filtering structure and the detection chip 10, so that detection is completed. Optionally, the optical gas chamber 3 may have a direct-projection structure or a multiple-reflection structure.
The infrared gas sensor also comprises a matching circuit 4, the matching circuit 4 is respectively connected with the infrared light source 2 and the infrared detector, and the matching circuit 4 is used for modulating, amplifying, collecting and processing the infrared light source.
The support circuit 4 comprises a light source modulation module for electrical modulation of the infrared light source.
The support circuit 4 includes a signal processing module for processing the electrical signal.
In the embodiment of the application, the light source control module, the signal amplification module, the signal acquisition module, the signal processing module and the communication display module are respectively used for controlling the infrared light source 2 and acquiring and processing the feedback electric signal of the infrared detector.
The infrared light emitted by the infrared light source 2 is transmitted through the optical air chamber 3 and then reaches the surface of the infrared detector, after being filtered by the metamaterial filtering structure 20 on the surface of the infrared detector, the infrared light with a plurality of specific wavelengths is transmitted to the detection chip 10, the detection chip 10 converts the infrared light with a plurality of wavelengths into electric signals which are superposed and output, and the electric signals are amplified by the signal amplification module and then sent to the signal acquisition module and finally reach the signal processing module.
The signal processing module is used for calculating the concentration of the gas to be measured according to the electric signals.
The matching circuit 4 further comprises a communication display module, and the communication display module is used for displaying the concentration of the gas to be detected.
In the embodiment of the application, after wide-spectrum light emitted by the infrared light source 2 is filtered by the metamaterial filtering structure 20, infrared light with multiple wavelengths corresponding to the residual gas to be detected reaches the detection chip 10, the detection chip 10 converts an optical signal into an electrical signal, the electrical signal is amplified by the signal amplification module and then is sent to the signal processing module by the signal acquisition module to calculate the concentration of the gas to be detected, and finally, the concentration value of the gas to be detected is sent to the user display end by the communication display module.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (11)
1. An infrared detector, comprising:
the filtering structure is used for filtering infrared light, so that the infrared light with at least one preset wavelength passes through the filtering structure;
the detection chip (10) is used for converting the infrared light with at least one preset wavelength into an electric signal;
wherein the filter structure is a metamaterial filter structure (20).
2. The infrared detector according to claim 1, characterized in that the metamaterial filter structure (20) is a metal layer (21) -dielectric layer (22) -metal layer structure (23).
3. The infrared detector according to claim 1, characterized in that the output signal of the detection chip (10) is the sum of at least 1 preset wavelength of infrared light passing through the metamaterial filter structure (20) and converted into electrical signals through the detection chip (10).
4. The infrared detector according to claim 2 or 3, characterized in that the detection chip (10) is any one of a thermopile chip, a pyroelectric chip, a photo-electric chip.
5. An infrared gas sensor, comprising: the device comprises an infrared light source (2), an optical air chamber (3) and an infrared detector, wherein the infrared light source (2) is arranged at one end of the optical air chamber (3), and the infrared detector is arranged at the other end of the optical air chamber (3);
wherein the infrared detector is the infrared detector of any one of claims 1 to 4.
6. The infrared gas sensor according to claim 5, characterized in that the infrared light source (2) is a broadband infrared light source (2).
7. The infrared gas sensor according to claim 5, characterized in that it further comprises a support circuit (4), said support circuit (4) being connected to said infrared light source (2) and said infrared detector, respectively, said support circuit (4) being adapted for infrared light source modulation, signal amplification, acquisition and processing.
8. The infrared gas sensor as claimed in claim 7, characterized in that the supporting circuit (4) comprises a light source modulation module for the electrical modulation of an infrared light source.
9. The infrared gas sensor according to claim 8, characterized in that the supporting circuit (4) comprises a signal processing module for processing the electrical signals.
10. The infrared gas sensor as recited in claim 8, wherein the signal processing module is configured to calculate the concentration of the gas to be measured according to the electrical signal.
11. The infrared gas sensor as recited in claim 9, characterized in that the support circuit (4) further comprises a communication display module for displaying the concentration of the gas to be measured.
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| CN114942072A (en) * | 2022-06-02 | 2022-08-26 | 广州睿芯微电子有限公司 | Multispectral imaging chip and object identification system |
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| CN204374076U (en) * | 2014-12-29 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | Multifunction infrared gas sensor |
| CN106006538A (en) * | 2015-03-27 | 2016-10-12 | 马克西姆综合产品公司 | Thermopile temperature sensor field of view narrowing using integrated light blocking layer and lens |
| CN105510266A (en) * | 2015-11-26 | 2016-04-20 | 无锡拓能自动化科技有限公司 | Harmful gas monitoring system based on infrared absorption spectrum |
| WO2017088071A1 (en) * | 2015-11-26 | 2017-06-01 | Sensirion Ag | Infrared device |
| CN107389587A (en) * | 2017-09-04 | 2017-11-24 | 苏州诺联芯电子科技有限公司 | The non-dispersive infrared gas sensor and its detection method of Monitoring lower-cut can be reduced |
| CN108801966A (en) * | 2018-05-28 | 2018-11-13 | 电子科技大学 | A kind of polynary pyroelectricity sensing element of polymorphic type gas sensing |
| CN109682482A (en) * | 2018-12-20 | 2019-04-26 | 广州奥松电子有限公司 | A kind of production method and infrared detector of the infrared detector for MEMS thermopile |
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| CN114942072A (en) * | 2022-06-02 | 2022-08-26 | 广州睿芯微电子有限公司 | Multispectral imaging chip and object identification system |
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