CN110656309B

CN110656309B - Evaporation source and evaporation device

Info

Publication number: CN110656309B
Application number: CN201811362786.6A
Authority: CN
Inventors: 菅原由季
Original assignee: Canon Tokki Corp
Current assignee: Canon Tokki Corp
Priority date: 2018-06-28
Filing date: 2018-11-16
Publication date: 2024-03-15
Anticipated expiration: 2038-11-16
Also published as: KR20200001956A; JP7092577B2; KR102661888B1; JP2020002436A; JP2022113863A; KR20240035975A; CN110656309A

Abstract

The invention provides a heating device, an evaporation source and a vapor deposition device capable of realizing the homogenization of the temperature distribution of a crucible. The heating device is provided with: a heater (331) having a heating element (331 b) and heating the crucible (321); and a first reflector (341) which is provided on the opposite side of the crucible (321) with the heater (331) interposed therebetween and reflects heat from the heater (331), wherein a high heat emissivity portion (341 a) having a heat emissivity higher than that of the other portion is locally provided in the first reflector (341).

Description

Evaporation source and evaporation device

Technical Field

The present invention relates to a heating device, an evaporation source, and a vapor deposition device used for vacuum vapor deposition.

Background

The vacuum deposition is provided with a heating device for heating a crucible containing a material of a substance deposited on a substrate to evaporate or sublimate the material. When the temperature distribution of the crucible heated by the heating device becomes uneven, a part of the material remains or additional power is required to heat the entire material. Therefore, conventionally, countermeasures have been taken such as varying the density of the heating element provided in the heating device depending on the position in order to suppress the temperature distribution of the crucible.

However, for example, when the shape of the case accommodating the crucible is elongated, the heat exchange of the radiant heat is deviated depending on the position in the case, and thus it is difficult to suppress the non-uniformity of the temperature distribution of the crucible only by the countermeasure described above.

[ Prior Art literature ]

[ patent literature ]

[ patent document 1 ] International publication No. 2006/075755

Disclosure of Invention

[ problem ] to be solved by the invention

The invention aims to provide a heating device, an evaporation source and a vapor deposition device capable of improving uniformity of temperature distribution in a crucible.

[ solution ] to solve the problem

In order to solve the above problems, the present invention adopts the following means.

That is, the heating device of the present invention includes:

a heater having a heating body and heating the crucible; and

A reflector provided on the opposite side of the crucible with the heater interposed therebetween, the reflector reflecting heat from the heater,

the heating device is characterized in that,

the reflector is provided with a high emissivity part locally having a higher emissivity than other parts.

The evaporation source of the present invention is characterized by comprising:

a crucible for storing a material of a substance deposited on a substrate; and

The above heating device for heating the crucible.

The vapor deposition device of the present invention is characterized by comprising:

the evaporation source; and

The evaporation source is disposed in an internal chamber.

[ Effect of the invention ]

According to the present invention, it is possible to improve the uniformity of the temperature distribution of the crucible.

Drawings

Fig. 1 is a schematic configuration diagram of a vapor deposition apparatus according to embodiment 1 of the present invention.

Fig. 2 is a schematic cross-sectional view of the evaporation source of example 1 of the present invention.

Fig. 3 is an explanatory diagram of the relationship between the temperature distribution of the heater and the reflector and the crucible.

Fig. 4 is a diagram showing a modification of the reflector according to embodiment 1 of the present invention.

Fig. 5 is a graph illustrating a relationship between heat radiation rate and thermal resistance.

Fig. 6 is a schematic configuration diagram of a reflector according to embodiment 2 of the present invention.

Fig. 7 is a schematic cross-sectional view of an evaporation source according to example 3 of the present invention.

[ reference numerals description ]

10 … vapor deposition device, 20 … substrate, 100 … chamber, 300 … evaporation source, 321 … crucible, 330 … heater, 331 … first heater, 331b … heater, 340 … reflector, 341 … first reflector, 341a … high heat radiation rate part

Detailed Description

The following is a detailed description of an embodiment for carrying out the present invention with reference to the drawings. However, the dimensions, materials, shapes, relative arrangements, and the like of the structural members described in the embodiments are not intended to limit the scope of the present invention only unless specifically described.

Example 1

A heating device according to embodiment 1 of the present invention, an evaporation source including the heating device, and a vapor deposition device including the evaporation source will be described with reference to fig. 1 to 3.

< vapor deposition apparatus >

Referring to fig. 1, a vapor deposition apparatus 10 according to the present embodiment is described. Fig. 1 is a schematic configuration diagram of a vapor deposition device 10 according to embodiment 1 of the present invention. The vapor deposition device 10 includes: a chamber 100 in which the inside is vacuum (reduced pressure atmosphere) by a vacuum pump 200; and an evaporation source 300 disposed inside the chamber 100. The evaporation source 300 is responsible for evaporating or sublimating a material of a substance deposited on the counter substrate 20 by heating the material. The substance evaporated or sublimated by the evaporation source 300 adheres to the substrate 20 provided inside the chamber 100, thereby forming a thin film on the substrate 20.

< Evaporation Source >

Referring to fig. 2, the overall structure of the evaporation source 300 of the present embodiment is described. Fig. 2 is a schematic cross-sectional view of an evaporation source 300 of an embodiment of the invention. Fig. 2 schematically shows a cross section of the evaporation source 300 taken vertically up and down so as to include the central axes of the nozzles 350 arranged in a row.

The evaporation source 300 includes a first case 311 having a rectangular parallelepiped shape and a second case 312 having a rectangular parallelepiped shape. The first case 311 and the second case 312 serve to prevent the temperature in the chamber from rising due to heat in the evaporation source. The above-described case may be referred to as a "cooling case". The second housing 312 is fixed to the upper surface of the first housing 311. Through holes 311a and 312a for allowing the inside of the first case 311 to communicate with the inside of the second case 312 are provided in the upper part of the case. A crucible 321 for storing a material of a substance deposited on the substrate 20 is provided in the first case 311, and a diffusion chamber 322 for diffusing the evaporated or sublimated material is provided in the second case 312. The crucible 321 and the diffusion chamber 322 are connected to each other through a communication portion 323. A plurality of nozzles 350 for ejecting the diffused material are provided on the upper surface side of the diffusion chamber 322.

A plurality of heaters are provided inside the first housing 311 so as to surround the crucible 321 and heat the crucible 321. That is, a first heater 331 disposed opposite to the bottom surface of the crucible 321, a second heater 332 disposed opposite to the side surface of the crucible 321, a third heater 333 disposed opposite to the upper surface of the crucible 321, and the like are provided.

Reflectors for reflecting heat from the heaters are provided between the heaters and the inner wall surface of the first housing 311. In other words, reflectors (the reflectors are provided with a space from the heaters) are provided on the opposite sides of the crucible 321 with the heaters interposed therebetween. More specifically, a first reflector 341 disposed between the first heater 331 and the inner wall surface of the first housing 311, a second reflector 342 disposed between the second heater 332 and the inner wall surface of the first housing 311, a third reflector 343 disposed between the third heater 333 and the inner wall surface of the first housing 311, and the like are provided. Although not particularly shown, in fig. 2, a heater and a reflector are also provided in the same manner in the front side and the rear side of the paper surface, respectively.

In addition, a plurality of heaters for heating the inside of the diffusion chamber 322 are provided in the second casing 312 so as to prevent the evaporated or sublimated material from being deposited at a reduced temperature in the diffusion chamber 322. That is, a fourth heater 334 disposed opposite to the bottom surface of the diffusion chamber 322, a fifth heater 335 disposed opposite to the side surface of the diffusion chamber 322, and the like are provided.

Reflectors for reflecting heat from the heaters are provided between the heaters and the inner wall surface of the second casing 312. More specifically, a fourth reflector 344 disposed between the fourth heater 334 and the inner wall surface of the second casing 312, a fifth reflector 345 disposed between the fifth heater 335 and the inner wall surface of the second casing 312, and the like are provided. Although not particularly shown, in fig. 2, a heater and a reflector are also provided in the same manner in the front side and the rear side of the paper surface, respectively. A heater and a reflector may be provided above the diffusion chamber 322.

< heating device (Heater and Reflector) >)

In particular, referring to fig. 3, the heater and the reflector provided inside the first housing 311 are described in more detail. The heater and the reflector constitute a heating device provided in the evaporation source 300. Here, the first heater 331 and the first reflector 341 out of the plurality of heaters and reflectors will be described as an example. Fig. 3 (a) is a side view of the first heater 331. Fig. 3 (b) is a graph showing a temperature distribution of a bottom surface portion of the crucible 321 heated by the first heater 331. However, fig. 3 (b) shows a temperature distribution when the heat emissivity of the front and rear surfaces of the first reflector 341 is uniform. Fig. 3 (c) is a side view of the first reflector 341. Fig. 3 (d) is a top view of the first reflector 341. Fig. 3 (e) is an explanatory diagram of a position where the high emissivity portion is provided. Fig. 3 (f) is a graph showing a temperature distribution of a bottom surface portion of the crucible 321 heated by the first heater 331. However, fig. 3 (f) shows a temperature distribution when the heat emissivity of the front and rear surfaces of the first reflector 341 is locally different. In fig. 3 (a) to (d) and (f), an arrow X indicates a direction from one end side to the other end side of the first heater 331 and the first reflector 341.

The first heater 331 has a heating element 331b. As the heating element 331b, a member that generates heat by energization, such as a package heater, can be preferably applied. The first heater 331 may be constituted by, for example, a metal plate 331a and a heating element 331b provided in the metal plate 331a at a position facing the wall surface of the crucible 321. The heating elements 331b are arranged so that the density varies depending on the position. That is, in the case where the first case 311 has an elongated shape, the temperature is likely to be lower in the vicinity of both ends of the first case 311 than in the vicinity of the center of the first case 311, and therefore the heat generating elements 331b are arranged so that the density is higher in the vicinity of both ends than in the vicinity of the center.

Fig. 3 (b) shows a temperature distribution of the bottom surface of the crucible 321 when the crucible 321 is heated, in the case where the first heater 331 having the above-described structure is used and the first reflector has a general structure (in the case where the heat radiation rates of both surfaces are uniform). As shown in the figure, if only the measure for changing the density of the heating element 331b is taken, it is difficult to sufficiently uniform the temperature distribution and to make the maximum temperature difference dT1 uniform to a level of about several ℃.

Therefore, in the present embodiment, the first reflector 341 is provided with a high emissivity portion 341a having a higher emissivity than other portions locally. The high emissivity portion 341a is provided at a position where the temperature of at least a part of the region higher than the average temperature in the temperature distribution of the wall surface (outer wall surface) of the crucible 321 is lowered (see fig. 3 (c) (d)). More specifically, when the region H0 having a temperature distribution higher than the average temperature on the wall surface of the crucible 321 is virtually projected onto the first reflector 341 along the normal direction N of the wall surface of the crucible 321, the high emissivity portion 341a is provided in at least a part of the virtually projected region H1 (see (e) of fig. 3). In the first reflector 341 of the present embodiment, the high emissivity portions 341a provided at two places have a higher emissivity than other places. The "average temperature" mentioned above is an average temperature in the temperature distribution shown in fig. 3 (b).

Fig. 3 (f) shows a temperature distribution of the bottom surface of the crucible 321 when the crucible 321 is heated by the first heater 331 using the first reflector 341. As shown in the figure, by using the first reflector 341 of the present embodiment, it is possible to improve uniformity of the temperature distribution and to reduce the maximum temperature difference dT2 to a level of several ℃.

Here, the first reflector 341 is formed of a metal plate, and the high heat emissivity portion 341a is formed of a surface-treated portion that has been subjected to surface treatment. As examples of the surface treatment portion for improving the heat emissivity, a surface treatment portion by sputtering (sputtering portion), a surface treatment portion by shot peening (shot peening portion), a surface treatment portion by black plating (black plating layer as black plating portion), and the like are preferable. Further, as a preferable example of "sputtering (a technique of blowing a melted material onto a surface of a substrate and applying a coating layer)", sputtering using a ceramic containing alumina as a sputtering material can be cited. Thereby, an alumina sprayed layer as a surface treatment portion was formed.

In the above description, the case of the first heater 331 and the first reflector 341 has been described as an example, but the same configuration may be adopted for the second heater 332 and the second reflector 342, and the third heater 333 and the third reflector 343. That is, by making the density of the heating element in the second heater 332 different depending on the position and providing the high heat radiation rate portion in the second reflector 342, it is possible to achieve uniformity of the temperature distribution of the side surface of the crucible 321. Further, by making the density of the heating elements in the third heater 333 different depending on the position and providing the high heat emissivity portion in the third reflector 343, it is possible to achieve uniform temperature distribution on the upper surface of the crucible 321. Although not particularly shown in the drawings, the heater and the reflector provided on the front side and the rear side of the drawing sheet in fig. 2 may be of course of the same configuration.

In the above example, the high heat emissivity portion 341a is shown as a surface treatment portion formed on the opposite surface side of the first reflector 341 to the first heater 331. However, as shown in fig. 4, the high heat emissivity portion 341Xa may be a surface treatment portion formed on the back side of the surface of the first reflector 341X facing the first heater 331. Fig. 4 is a diagram showing a modification of the reflector of the present embodiment, in which fig. (a) is a side view of the reflector and fig. (b) is a bottom view of the reflector. Even when the first reflector 341X configured as described above is used, the same operational effects as those of the case where the first reflector 341 is used can be obtained. The reason for this will be described below with reference to fig. 5.

Fig. 5 is a diagram illustrating a relationship between heat radiation rate and thermal resistance, and shows a model in which the heater 330, the reflector 340, and the case (cooling plate) 310 are each assumed to be a simple parallel flat plate. In this model, the areas a of the facing surfaces of the respective members are all equal, and the form coefficients between the facing surfaces of the adjacent members are all1. The temperature of the plate was uniform, and there was no difference in temperature between the front and back. Here, the current is made to correspond to the actual heat transfer quantity Q, and the potential is made to correspond to σT ⁴ When (sigma: stefan-Boltzmann constant, T: temperature), the thermal resistance between the facing surfaces becomes R= (1/ε1+1/ε2-1)/A. Here, ε 1 and ε 2 are the heat emissivity of each of the facing surfaces. The combination of the thermal resistances can be calculated in the same manner as in the case of the series connection of the electrical resistances. Here, as in the model shown in fig. 5, the thermal resistance between the heater 330 and the reflector 340 is R1, and the thermal resistance between the reflector 340 and the case 310 is R2. The heat radiation rate of the surface of the heater 330 facing the reflector 340 is set to be εh, the heat radiation rate of the surface of the reflector 340 facing the heater 330 is set to be εr1, the heat radiation rate of the surface of the reflector 340 facing the housing 310 is set to be εr2, and the heat radiation rate of the surface of the housing 310 facing the reflector 340 is set to εc.

Then, the thermal resistance R1 between the heater 330 and the reflector 340 passes

R1＝(1/εh+1/εr1-1)/A

Calculated, the thermal resistance R2 between the reflector 340 and the housing 310 is calculated by

R2＝(1/εc+1/εr2-1)/A

To calculate.

And, the entire thermal resistance R between the heater 330 and the housing 310 passes

R＝R1+R2

＝(1/εh+1/εr1-1)/A+(1/εc+1/εr2-1)/A

To calculate.

From this equation, it is understood that the thermal resistance R varies similarly in all cases regardless of whether or not er 1 or er 2 is changed. Therefore, the effect on the thermal resistance between the heater 330 and the case 310 is the same regardless of whether the heat radiation rate of the reflector 340 on the facing surface side facing the heater 330 or the heat radiation rate of the reflector 340 on the facing surface side facing the case 310 is increased.

Hereinafter, a mechanism of movement of heat will be described more specifically. When the heat emissivity of the facing surface side of the reflector 340 facing the heater 330 is increased, the thermal resistance R1 between the heater 330 and the reflector 340 is decreased. Thereby, the heat Q flowing from the heater 330 to the reflector 340 increases. Accordingly, the temperature of the heater 330 decreases and the temperature of the reflector 340 increases. Then, the temperature difference between the reflector 340 and the case 310 increases, and the amount of heat Q flowing from the reflector 340 to the case 310 increases.

In contrast, when the heat radiation rate of the reflector 340 on the side of the facing surface facing the case 310 is increased, the thermal resistance R2 between the case 310 and the reflector 340 is decreased. Thereby, the heat Q flowing from the reflector 340 to the case 310 increases. Accordingly, the temperature of the reflector 340 decreases. Then, the temperature difference between the reflector 340 and the heater 330 increases, and the amount of heat Q flowing from the heater 330 to the reflector 340 increases. Thereby, the temperature of the heater 330 decreases.

In this way, the temperature of the heater 330 decreases, both by increasing the heat radiation rate on the facing surface side of the reflector 340 facing the heater 330 and by increasing the heat radiation rate on the back side. Therefore, by increasing the heat emissivity of a portion of the reflector 340, the temperature of a portion of the heater 330 can be reduced, and the temperature of a portion of the crucible 321 can be reduced. This can reduce the temperature of the heater 330 and the crucible 321 at a position higher than other positions, and can improve the uniformity of the temperature distribution of the crucible 321.

< advantages of the heating device, evaporation source, and vapor deposition device of this embodiment >

According to the present embodiment, for example, the high emissivity portion 341a having a higher emissivity than other portions is locally provided in the first reflector 341. This can improve the uniformity of the temperature distribution on the bottom surface of the crucible 321. As for the position where the high emissivity portion 341a is provided, as described above. As described above, the second heater 332, the second reflector 342, the third heater 333, the third reflector 343, and the like can also improve uniformity of temperature distribution on the side surface or the upper surface of the crucible 321 by adopting the same configuration.

Therefore, it is possible to suppress the residue of a part of the material stored in the crucible 321, and to suppress the power consumption for heating the entire material.

Example 2

Fig. 6 shows embodiment 2 of the present invention. In the above-described embodiment 1, the case where the high emissivity portion provided in the reflector is the surface treatment portion is shown, but in the present embodiment, the case where the high emissivity portion provided in the reflector is a portion where a plurality of through holes are formed is shown. The structure described in embodiment 1 can be applied to a structure other than the reflector, and therefore, the description thereof is omitted.

Fig. 6 is a schematic configuration diagram of a reflector according to embodiment 2 of the present invention, in which fig. (a) is a plan view of the reflector and fig. (b) is a cross-sectional view of the reflector (AA cross-sectional view in fig. (a)). The reflector 341Y of the present embodiment is also provided with a high heat emissivity portion 341Ya as in the case of embodiment 1. The positions where the high emissivity portions 341Ya are provided are the same as in the case of embodiment 1, and therefore, the description thereof will be omitted. The high emissivity portion 341Ya of the present embodiment is formed of a portion where a plurality of through holes penetrating both surfaces of the reflector 341Y are formed. At the portion where the through hole is provided, heat is likely to escape as compared with other portions, and the heat radiation rate increases.

Even when the reflector 341Y configured as described above is used, the same effects as those in the case of embodiment 1 can be obtained. The reflector 341Y of this embodiment can be applied to any one of the bottom surface side of the crucible, the side surface side of the crucible, and the upper surface side of the crucible, as in the case of embodiment 1.

Example 3

Fig. 7 shows embodiment 3 of the present invention. In the above embodiment 1, the configuration is shown in the case where the evaporation source includes the crucible and the diffusion chamber, but in the present embodiment, the configuration is shown in the case where the evaporation source is not provided with the diffusion chamber. Since the other basic structures are the same as those of embodiment 1, the same reference numerals are given to the same components, and the description thereof is omitted as appropriate.

Fig. 7 is a schematic cross-sectional view of an evaporation source according to example 3 of the present invention. Fig. 7 schematically shows a cross section of the evaporation source 300X taken vertically up and down so as to include the central axes of the nozzles 350 arranged in a row.

In the evaporation source 300X of this embodiment, the first shell 311 having a rectangular parallelepiped shape is provided as in the case of embodiment 1, but unlike in the case of embodiment 1, the second shell 312 is not provided. The point where the first case 311 plays a role of blocking heat is the same as in the case of embodiment 1 described above. In the first case 311, a crucible 321 for storing a material deposited on a substrate is provided as in the case of example 1. In the present embodiment, a diffusion chamber is not provided, and a plurality of nozzles 350 for ejecting the diffused material are provided on the upper surface side of the crucible 321.

The point at which the plurality of heaters (the first heater 331, the second heater 332, the third heater 333, and the like) are provided so as to surround the crucible 321 inside the first case 311 is the same as in the case of embodiment 1 described above. The point where reflectors (first reflector 341, second reflector 342, third reflector 343, and the like) for reflecting heat from the heaters are provided between the respective heaters and the inner wall surface of the first case 311 is the same as that of the above-described embodiment 1. In the present embodiment, the high emissivity portions are locally provided in each reflector. As for the position where the high heat emissivity portion is provided, as described in the above-described embodiment 1.

The evaporation source 300X of the present embodiment configured as described above can also obtain the same effects as those of the case of embodiment 1 described above. That is, the uniformity of the temperature distribution on the wall surface of the crucible 321 can be improved. Further, by improving the uniformity of the temperature distribution on the wall surface of the crucible 321, the amount of the material ejected from the plurality of nozzles 350 can be made uniform. Therefore, there is also an advantage that uniformity of the film thickness formed on the substrate can be achieved without providing a diffusion chamber.

(others)

In the above embodiment, the structure in which the density of the heating element is different depending on the position is shown. However, even when a structure is employed in which the density of the heating element does not differ depending on the position, the effect of improving the uniformity of the temperature distribution of the crucible can be certainly obtained by employing a structure in which the reflector is provided with a high heat radiation rate portion. In addition, in the above-described embodiment 1, the case where the high heat emissivity portion constituted by the surface treatment portion is provided on the opposite surface side of the reflector to the heater and the case where the high heat emissivity portion is provided on the back side of the opposite surface of the reflector to the heater are described. However, a structure may be adopted in which high heat emissivity portions each composed of a surface treatment portion are provided on both surfaces of the reflector. In the above embodiments, the reflector is formed of 1 metal plate. However, a structure in which 2 or more reflectors are stacked may be employed. In this case, the high heat emissivity part may be provided in at least one of the 2 or more reflectors.

Claims

1. An evaporation source, comprising:

a crucible containing a material of a substance deposited on a substrate, the crucible having a nozzle for ejecting the evaporated or sublimated material on an upper surface side;

a heater having a heating element for heating a bottom surface of the crucible opposite to an upper surface of the crucible; and

A reflector provided on the opposite side of the bottom surface of the crucible with the heater interposed therebetween, the reflector reflecting heat from the heater,

the evaporation source is characterized in that,

the reflector is provided with a high heat emissivity part with heat emissivity higher than other parts locally,

when a region of the temperature distribution of the bottom surface of the crucible, which is higher than the average temperature, is virtually projected onto the reflector along the normal direction of the bottom surface of the crucible, the high heat emissivity portion is provided in at least a part of the virtually projected region.

2. The evaporation source according to claim 1, wherein,

the high heat emissivity portion is a surface treatment portion formed on a facing surface side of the reflector, the facing surface side facing the heater.

3. The evaporation source according to claim 1, wherein,

the high heat emissivity portion is a surface treatment portion formed on a back side of a facing surface of the reflector facing the heater.

4. The evaporation source according to claim 2, wherein,

the surface treatment section is a treatment section based on sputtering.

5. The evaporation source according to claim 3, wherein,

the surface treatment section is a treatment section based on sputtering.

6. The evaporation source according to claim 2, wherein,

the surface treatment section is a shot peening-based treatment section.

7. The evaporation source according to claim 3, wherein,

the surface treatment section is a shot peening-based treatment section.

8. The evaporation source according to claim 2, wherein,

the surface treatment is a treatment based on black plating.

9. The evaporation source according to claim 3, wherein,

the surface treatment is a treatment based on black plating.

10. The evaporation source according to claim 1, wherein,

the high emissivity portion is a portion where a plurality of through holes penetrating both surfaces of the reflector are formed.

11. The evaporation source according to any one of claims 1 to 10, wherein,

further comprises:

a diffusion chamber which is connected to the inside of the crucible via a communication portion, is provided on the upper surface side of the crucible, diffuses the evaporated or sublimated material, and ejects the diffused material via the nozzle provided on the upper surface side;

a heater on an upper surface side that heats an upper surface of the crucible; and

and an upper surface side reflector provided on an opposite side of the upper surface of the crucible with the upper surface side heater interposed therebetween, the upper surface side reflector reflecting heat from the upper surface side heater.

12. The evaporation source according to claim 11, wherein,

the reflector on the upper surface side is locally provided with a high heat emissivity part with heat emissivity higher than other parts,

when a region of the temperature distribution on the upper surface of the crucible, which is higher than the average temperature, is virtually projected onto the reflector on the upper surface side along the normal direction of the upper surface of the crucible, the high heat emissivity portion of the reflector on the upper surface side is provided on at least a part of the virtually projected region.

13. An evaporation device, characterized in that it comprises:

the evaporation source according to any one of claims 1 to 12; and

The evaporation source is disposed in an internal chamber.