CN110649177A - Preparation method of display panel, display panel and display device - Google Patents
Preparation method of display panel, display panel and display device Download PDFInfo
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- CN110649177A CN110649177A CN201910903505.1A CN201910903505A CN110649177A CN 110649177 A CN110649177 A CN 110649177A CN 201910903505 A CN201910903505 A CN 201910903505A CN 110649177 A CN110649177 A CN 110649177A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The application provides a preparation method of a display panel, the display panel and a display device. The display panel comprises a display area and a non-display area, wherein the non-display area comprises an opening area and an isolation area. The preparation method comprises the following steps: providing a substrate; forming at least one conductive layer positioned in a display area and a first isolation structure positioned in a non-display area on a substrate, wherein the first isolation structure is at least positioned in the isolation area; the orthographic projection of a first metal film layer of the first isolation structure and a second metal film layer on the substrate are superposed, and the first isolation structure and the at least one conducting layer are formed simultaneously; forming an electrode layer on at least one conducting layer, simultaneously etching the electrode layer and the first metal film layer to pattern the electrode layer, etching the side part of the first metal film layer to obtain a second isolation structure, covering the orthographic projection of the first metal film layer on the substrate by the orthographic projection of the second metal film layer on the substrate, and enabling the maximum width of the first metal film layer to be smaller than that of the second metal film layer; and opening holes in the hole opening area.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to a display panel, a manufacturing method thereof, and a display device.
Background
With the rapid development of electronic devices, the requirements of users on screen occupation ratio are higher and higher, so that the comprehensive screen display of the electronic devices is concerned more and more in the industry. Since conventional electronic devices such as mobile phones and tablet computers need to integrate front-facing cameras, earphones, infrared sensing elements, and the like, generally, holes are formed in a display screen, and the cameras, the earphones, the infrared sensing elements, and the like are disposed in the hole area.
But the setting of trompil can make the encapsulation effect of display screen worsen, inside water oxygen in the air enters into the display screen through the trompil easily, probably causes the display screen inefficacy, influences electronic equipment's life.
Disclosure of Invention
According to a first aspect of embodiments of the present application, there is provided a method of manufacturing a display panel, the display panel including a display area and a non-display area, the non-display area including an opening area and an isolation area adjoining the display area and the opening area, the method including:
providing a substrate;
forming at least one conductive layer located in the display area and a first isolation structure located in the non-display area on the substrate, wherein the first isolation structure is at least located in the isolation area, the first isolation structure is an annular structure, and the display area surrounds the first isolation structure; the first isolation structure comprises a first metal film layer and a second metal film layer positioned on the first metal film layer, orthographic projections of the first metal film layer and the second metal film layer on the substrate are superposed, and the first isolation structure and the at least one conducting layer are formed simultaneously;
forming an electrode layer on the at least one conductive layer, and simultaneously etching the electrode layer and the first metal film layer to pattern the electrode layer, and etching the side portion of the first metal film layer to obtain a second isolation structure, wherein an orthographic projection of the second metal film layer on the substrate in the second isolation structure covers an orthographic projection of the first metal film layer on the substrate, and the maximum width of the first metal film layer is smaller than the width of the second metal film layer;
and opening holes in the hole opening area.
In one embodiment, the display region includes a pixel circuit and a data line, the pixel circuit includes a transistor, the at least one conductive layer includes a source and a drain of the transistor, or the at least one conductive layer includes the data line, the at least one conductive layer includes a first conductive film layer, a second conductive film layer on the first conductive film layer, and a third conductive film layer on the second conductive film layer; the first metal film layer and the second conductive film layer are positioned on the same layer, and the second metal film layer and the third conductive film layer are positioned on the same layer;
preferably, the forming at least one conductive layer on the substrate in the display region and the first isolation structure on the substrate in the non-display region includes:
forming the first metal layer covering the display area and the non-display area, the second metal layer on the first metal layer, and a third metal layer on the second metal layer on the substrate;
patterning the first metal layer, the second metal layer and the third metal layer, wherein the first metal layer which is not etched in the display area is a first conductive film layer of the at least one conductive layer, the second metal layer which is not etched in the display area is a second conductive film layer of the at least one conductive layer, the third metal layer which is not etched in the display area is a third conductive film layer of the at least one conductive layer, and the second metal layer and the third metal layer which are not etched in the non-display area are respectively a first metal film layer and a second metal film layer of the first isolation structure;
preferably, the first metal layer and the third metal layer are made of titanium, and the second metal layer is made of aluminum.
In one embodiment, the display region includes a plurality of sub-pixels including an anode block, an organic light emitting material on the anode block, and a cathode on the organic light emitting material;
preferably, the etching the electrode layer and the first metal film layer to pattern the electrode layer, and simultaneously etching the side portion of the first metal film layer to obtain the second isolation structure includes:
etching the electrode layer and the first metal film layer simultaneously by adopting a wet etching process so as to pattern the electrode layer to obtain a plurality of anode blocks, and etching the side part of the first metal film layer to obtain a second isolation structure;
preferably, the number of the second isolation structures is two or more, and the two or more second isolation structures are arranged at intervals in the non-display area. When the number of the second isolation structures is more than two, the organic light-emitting materials in the perforated area can be more favorably prevented from entering the display area, and the service life of the display panel is prolonged.
Preferably, the cross section of the first metal film layer of the second isolation structure in the longitudinal direction is rectangular or inverted trapezoidal. When the section of the first metal film layer, which is upward in the stacking direction of the display panel, is inverted trapezoid, the formation of the organic light-emitting material on the side of the first metal film layer is more favorably avoided.
In one embodiment, the preparation method further comprises:
and forming an inorganic film layer or an organic film layer on the second metal film layer of the second isolation structure. By forming the organic film layer or the inorganic film layer on the second metal film layer of the second isolation structure, the encapsulation performance of the non-display area can be improved due to the high adhesion between the encapsulation layer and the inorganic film layer or the organic film layer.
Preferably, the material of the inorganic film layer comprises silicon nitride or silicon oxide;
preferably, the display region further includes a planarization layer, and the organic film layer and the planarization layer are formed in the same process step. By the arrangement, the formation of the organic film layer does not increase the preparation process.
In one embodiment, the preparation method further comprises:
and forming a concave structure at the side part of the display area adjacent to the non-display area. By forming the recessed structure on the side of the display region adjacent to the non-display region, the organic light emitting material is broken at the recessed structure, that is, the organic light emitting material is not formed on the wall of the recessed structure, so that water and oxygen in the air cannot enter the display region through the recessed structure, and the service life of the display panel can be further improved.
Preferably, the forming of the recess structure at the side of the display region includes:
forming a laminated structure in an edge area of the display area adjacent to the non-display area, wherein the laminated structure comprises a third metal film layer and a fourth metal film layer located on the third metal film layer, and the third metal film layer is flush with the edge of the fourth metal film layer; the third metal film layer, the fourth metal film layer and the at least one conductive layer are formed simultaneously;
and etching one side of the third metal film layer facing the non-display area while etching the electrode layer and the first metal film layer so as to enable the third metal film layer to be sunken relative to the fourth metal film layer in a direction away from the non-display area. Thus, the concave structure is formed at the same time of forming the at least one conductive layer and the electrode block, and the forming of the concave structure does not increase the preparation process.
According to a second aspect of the embodiments of the present application, there is provided a display panel, the display panel including a display area and a non-display area, the non-display area including an opening area and an isolation area adjacent to the display area and the opening area, the isolation area being provided with a second isolation structure, the second isolation structure surrounding the display area;
the display panel comprises a substrate positioned in the display area and the isolation area, the display area is provided with at least one conducting layer positioned on the substrate and an electrode block positioned on the at least one conducting layer, the second isolation structure comprises a first metal film layer and a second metal film layer positioned on the first metal film layer, the orthographic projection of the second metal film layer on the substrate covers the orthographic projection of the first metal film layer on the substrate, and the maximum width of the first metal film layer is smaller than the width of the second metal film layer; the second isolation structure is formed in the step of forming the at least one conductive layer and the electrode block;
the display panel further comprises an organic light-emitting material and an encapsulation layer, wherein the organic light-emitting material is located on the electrode block and the second isolation structure, the encapsulation layer is located on the organic light-emitting material, the organic light-emitting material is disconnected at the second isolation structure, and the encapsulation layer at least covers the side portion of the first metal film layer.
In one embodiment, the display region includes a pixel circuit and a data line, the pixel circuit includes a transistor, the at least one conductive layer includes a source and a drain of the transistor, or the at least one conductive layer includes the data line;
the at least one conductive layer comprises a first conductive film layer, a second conductive film layer positioned on the first conductive film layer and a third conductive film layer positioned on the second conductive film layer; the first metal film layer and the second conductive film layer are positioned on the same layer, and the second metal film layer and the third conductive film layer are positioned on the same layer;
preferably, the first conductive film layer, the third conductive film layer and the second metal film layer are made of titanium, and the second conductive film layer and the first metal film layer are made of aluminum;
preferably, the display region includes a plurality of sub-pixels, and the sub-pixels include an anode block, an organic light emitting material on the anode block, and a cathode on the organic light emitting material;
preferably, the number of the second isolation structures is more than two, and the more than two second isolation structures are arranged at intervals in the isolation region. When the number of the second isolation structures is more than two, the organic light-emitting materials in the perforated area can be more favorably prevented from entering the display area, and the service life of the display panel is prolonged.
Preferably, the cross section of the first metal film layer of the second isolation structure in the longitudinal direction is rectangular or inverted trapezoidal. When the cross section of the first metal film layer in the stacking direction of the display panel is in an inverted trapezoid shape, the organic light-emitting material is more favorably prevented from being formed on the side portion of the first metal film layer.
In one embodiment, the display panel further includes an inorganic film layer or an organic film layer formed over the second metal film layer of the second isolation structure. By forming the inorganic film layer or the organic film layer on the second metal film layer of the second isolation structure, the encapsulation performance of the non-display area can be improved due to the high adhesion between the encapsulation layer and the inorganic film layer or the organic film layer.
Preferably, the material of the inorganic film layer comprises silicon nitride or silicon oxide;
preferably, the display region further includes a planarization layer, and the organic film layer and the planarization layer are formed in the same process step. Thus, the preparation process is not increased when the organic film layer is formed.
In one embodiment, the display region is provided with a recess structure at a side portion adjacent to the non-display region, the organic light emitting material is disconnected at the recess structure, and the encapsulation layer covers at least a sidewall of the recess structure. By forming the recessed structure on the side of the display region adjacent to the non-display region, the organic light emitting material is broken at the recessed structure, that is, the organic light emitting material is not formed on the wall of the recessed structure, so that water and oxygen in the air cannot enter the display region through the recessed structure, and the service life of the display panel can be further improved.
According to a third aspect of embodiments of the present application, there is provided a display device including:
an apparatus body;
the display panel covers the equipment body; and
and the photosensitive device is used for emitting or collecting light and is arranged in the opening area.
According to the preparation method of the display panel, the display panel and the display device, the second isolation structure is formed in the isolation area of the display panel, the orthographic projection of the second metal film layer of the second isolation structure on the substrate covers the orthographic projection of the first metal film layer on the substrate, and the maximum width of the first metal film layer is smaller than the width of the second metal film layer, so that the organic light-emitting material cannot be formed on the side portion of the first metal film layer when the organic light-emitting material is evaporated, namely the organic light-emitting material layer is disconnected at the second isolation structure, and water and oxygen in the air cannot enter the display area through the organic light-emitting material in the perforated area, and the service life of the display panel is prolonged. The preparation process of the second isolation structure comprises the steps of preparing the first isolation structure and etching the side part of the first metal film layer, the first isolation structure and at least one conducting layer of the display area are formed simultaneously, the etching of the side part of the first metal film layer and the etching of the electrode layer in the display area are carried out simultaneously, so that the preparation process of the display panel cannot be increased due to the preparation of the second isolation structure, and the preparation process of the display panel can be prevented from being complicated due to the formation of the second isolation structure.
Drawings
Fig. 1 is a top view of a display panel provided in an embodiment of the present application;
fig. 2 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present disclosure;
FIG. 3 is a partial cross-sectional view of a first intermediate structure of the display substrate shown in FIG. 1;
FIG. 4 is a partial cross-sectional view of a second intermediate structure of the display substrate shown in FIG. 1;
FIG. 5 is a partial cross-sectional view of a third intermediate structure of the display substrate shown in FIG. 1;
FIG. 6 is a partial cross-sectional view of a fourth intermediate structure of the display substrate shown in FIG. 1;
FIG. 7 is a partial cross-sectional view of a fifth intermediate structure of the display substrate shown in FIG. 1;
FIG. 8 is a schematic view of the display substrate of FIG. 1 taken along line AA;
fig. 9 is another schematic view of the display substrate shown in fig. 1 taken along line AA.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus consistent with certain aspects of the present application, as detailed in the appended claims.
As in the background art, the opening on the display screen may deteriorate the packaging effect of the display screen, and water and oxygen in the air may enter the display screen through the opening, which may cause the failure of the display screen and affect the service life of the electronic device. Generally, an isolation structure is arranged around the opening, and the organic light-emitting material of the display screen is disconnected at the isolation structure, so that water and oxygen in the air can be isolated from entering a display area of the display screen through the organic light-emitting material, the phenomenon that the water and oxygen in the air enter the display area of the display screen to cause the display screen to lose efficacy is avoided, and the service life of the display screen is prolonged. However, the inventors found that the provision of the isolation structure increases the manufacturing process of the display panel, which complicates the manufacturing process of the display panel, and increases the manufacturing cost of the display panel.
In order to solve the above problems, embodiments of the present application provide a method for manufacturing a display panel, and a display device, which can well solve the above problems.
The following describes a method for manufacturing a display panel, the display panel, and a display device in the embodiments of the present application in detail with reference to the accompanying drawings. The features of the following examples and embodiments can be supplemented or combined with each other without conflict.
The embodiment of the application provides a preparation method of a display panel. Referring to fig. 1, the display panel 100 includes a display area 10 and a non-display area 20, and the non-display area 20 includes an opening area 201 and an isolation area 202 adjacent to the display area 10 and the opening area 201. Referring to fig. 2, the method for manufacturing the display panel includes the following steps 110 to 140.
In step 110, a substrate is provided.
In one embodiment, the substrate may be a flexible substrate, the material PI (Polyimide) of the flexible substrate. In other embodiments, the substrate may be a rigid substrate, which may be made of, for example, glass, metal, plastic, etc.
In step 120, at least one conductive layer located in a display region and a first isolation structure located in a non-display region are formed on a substrate, the first isolation structure is at least located in the isolation region, the first isolation structure is an annular structure, and the display region surrounds the first isolation structure; the first isolation structure comprises a first metal film layer and a second metal film layer located on the first metal film layer, orthographic projections of the first metal film layer and the second metal film layer on the substrate are overlapped, and the first isolation structure and the at least one conducting layer are formed simultaneously.
Since the first isolation structure in the non-display area 20 is formed simultaneously with the formation of the at least one conductive layer of the display area 10 in this step, the preparation of the first isolation structure does not increase the number of manufacturing processes of the display panel.
In one embodiment, the display region 10 is provided with a plurality of sub-pixels, each of which includes an anode block, an organic light emitting material on the anode block, and a cathode on the organic light emitting material. The cathodes of the sub-pixels can be surface electrodes connected into a piece.
The display region 10 may further include a plurality of pixel circuits for driving the sub-pixels, and the plurality of pixel circuits may correspond to the plurality of sub-pixels one to one, that is, each pixel circuit drives one sub-pixel. The pixel circuit includes a transistor including a gate, a source, and a drain. The display region 10 may further include data lines electrically connected to the pixel circuits for providing data signals to the sub-pixels. The data line may be located over a source and a drain of the transistor. The at least one conductive layer may include a source electrode and a drain electrode of a transistor, or the at least one conductive layer may include a data line.
The at least one conductive layer includes a first conductive film layer, a second conductive film layer on the first conductive film layer, and a third conductive film layer on the second conductive film layer. The first metal film layer and the second conductive film layer of the first isolation structure are located on the same layer, and the second metal film layer and the third conductive film layer are located on the same layer.
In one embodiment, the step of forming at least one conductive layer on the substrate in the display region and the first isolation structure on the substrate in the non-display region may be performed as follows in steps 121 and 122.
In step 121, the first metal layer covering the display region and the non-display region, the second metal layer on the first metal layer, and a third metal layer on the second metal layer are formed on the substrate.
A first intermediate structure as shown in fig. 3 is obtained by step 121. Referring to fig. 3, the first metal layer 101 is in direct contact with the lower surface of the second metal layer 102, and the upper surface of the second metal layer 102 is in direct contact with the lower surface of the third metal layer 103. The first metal layer 101, the second metal layer 102 and the third metal layer 103 are located on the substrate 31, and all cover the display area 10 and the non-display area 20.
In one embodiment, at least one of the conductive layers includes a source and a drain of a transistor, and the method for manufacturing a display panel further includes, before step 121:
a semiconductor layer 114 is formed on a substrate 31, a gate insulating layer 32 is formed on the semiconductor layer 114, a capacitor lower plate 121 and a gate electrode 111 are formed on the gate insulating layer 32, a capacitor insulating layer 33 is formed on the capacitor lower plate 121 and the gate electrode 111, a capacitor upper plate 122 is formed on the capacitor insulating layer 33, and an interlayer dielectric layer 34 is formed on the capacitor upper plate 122. After that, a via hole (not shown) penetrating the gate insulating layer 32, the capacitor insulating layer 33, and the interlayer dielectric layer 34 is formed. The first metal layer 101, the second metal layer 102 and the third metal layer 103 are formed on the interlayer dielectric layer 34, and the first metal layer 101, the second metal layer 102 and the third metal layer 103 partially enter through holes formed in the gate insulating layer 32, the capacitor insulating layer 33 and the interlayer dielectric layer 34.
In step 122, the first metal layer, the second metal layer, and the third metal layer are patterned, the first metal layer, the second metal layer, and the third metal layer that are not etched in the display area are respectively a first conductive film layer, a second conductive film layer, and a third conductive film layer of the at least one conductive layer, and the second metal layer and the third metal layer that are not etched in the non-display area are respectively a first metal film layer and a second metal film layer of the first isolation structure.
In one embodiment, first metal layer 101, second metal layer 102, and third metal layer 103 may be etched using a dry etching process.
A second intermediate structure as shown in fig. 4 may be obtained, via step 122. In the second intermediate structure shown in fig. 4, the transistor 11 includes a gate 111, a source 112, a drain 113, and a semiconductor layer 114, and at least one conductive layer includes the source 112 and the drain 113 of the transistor 11. In the display region 10, the first metal layer 101 that is not etched away is the first conductive film layer 104 of the source 112 and the drain 113, the second metal layer 102 that is not etched away is the second conductive film layer 105 of the source 112 and the drain 113, and the third metal layer 103 that is not etched away is the third conductive film layer 106 of the source 112 and the drain 113. In the non-display area 20, the second metal layer 102 that is not etched away is a first metal film layer 211 of the first isolation structure 21, the third metal layer 103 that is not etched away is a second metal film layer 212 of the first isolation structure 21, and orthographic projections of the first metal film layer 211 and the second metal film layer 212 on the substrate 31 are overlapped. The first metal layer 101 in the non-display area 20 that is not etched away is located below the first isolation structure 21, and an orthographic projection of the second metal film layer 212 on the substrate 31 may coincide with a portion of the non-display area 20 that is not etched away from the first metal layer 101.
In one embodiment, the number of the first isolation structures 21 is two or more, and the two or more first isolation structures 21 are spaced apart in the non-display area 20. In the second intermediate structure shown in fig. 4, the number of the first isolation structures 21 is five, two first isolation structures 21 are provided in the opening region 201, and three first isolation structures 21 are provided in the isolation region 202. Wherein two or more includes two and more than two. In other embodiments, the number of the first isolation structures 21 disposed in the non-display area 20 may be different from five. In some embodiments, the first isolation structure 21 may be provided only at the isolation region 202.
In other embodiments, at least one conductive layer may also include a data line, or may also include other conductive film layers, or at least one conductive layer includes two conductive layers, wherein one conductive layer is located at the same layer as the first metal film layer 211 of the first isolation structure 21, and the other conductive layer is located at the same layer as the second metal film layer 212 of the first isolation structure 21.
In one embodiment, the material of the first metal layer 101 and the third metal layer 103 is the same, and the material of the first metal layer 101 and the third metal layer 103 may be titanium, and the material of the second metal layer 102 may be aluminum. Of course, in other embodiments, the first metal layer 101, the second metal layer 102 and the third metal layer 103 may be made of other materials.
In step 130, an electrode layer is formed on the at least one conductive layer, and the electrode layer and the first metal film layer are etched at the same time, so that the electrode layer is patterned, and the side portion of the first metal film layer is etched, thereby obtaining a second isolation structure, wherein an orthographic projection of the second metal film layer on the substrate in the second isolation structure covers an orthographic projection of the first metal film layer on the substrate, and the maximum width of the first metal film layer is smaller than the width of the second metal film layer.
In the lamination direction perpendicular to the display panel, the first metal film layer includes two opposite sides, and the two opposite sides are the side portions of the first metal film layer.
After forming the electrode layer on the at least one conductive layer, a third intermediate structure as shown in fig. 5 is obtained. As shown in fig. 5, the electrode layer 14 covers only the display region 10 and does not cover the non-display region 20. Thereafter, the electrode layer 14 and the first metal film layer 211 are etched, so as to obtain a fourth intermediate structure shown in fig. 6. In the fourth intermediate structure shown in fig. 6, a plurality of anode blocks 141 are obtained after etching the electrode layer 14. Before forming the electrode layer 14, the method for manufacturing a display panel further includes: a planarization layer 13 is formed on the source electrode 112 and the drain electrode 113, the planarization layer 13 covers only the display region 10, and the electrode layer 14 is formed on the planarization layer 13.
In one embodiment, the electrode layer and the first metal film layer are etched to pattern the electrode layer, and a side portion of the first metal film layer is etched to obtain the second isolation structure, which may be implemented by:
and etching the electrode layer 14 and the first metal film layer 211 by using a wet etching process, so that the electrode layer 14 is patterned to obtain a plurality of anode blocks 141, and the side of the first metal film layer 211 is etched to obtain the second isolation structure 22.
Since the etching of the first metal film layer 211 of the non-display area 20 and the etching of the electrode layer 14 of the display area 10 are formed in the same process step, the preparation process of the display panel is not increased.
When the wet etching process is used to etch the conductive layer 21 and the first metal film layer 211, a suitable etching solution can be selected, so that the etching solution only corrodes the electrode layer 14 and the first metal film layer 211, but does not corrode the second metal film layer 212.
In one embodiment, the number of the second isolation structures 22 is two or more, and the two or more second isolation structures 22 are spaced apart in the non-display region 20. In the fourth intermediate structure shown in fig. 6, the number of the second isolation structures 22 is five, and the second isolation structures are distributed in the isolation region 202 and the opening region 201. Wherein two or more includes two and more than two. When the number of the second isolation structures 22 is more than two, it is more favorable to block water and oxygen in the air from entering the display region through the organic light emitting material in the open pore region, and the service life of the display panel is prolonged. Of course, the number of second isolation structures 22 may also be different from five. Since the second isolation structure 22 in the opening region 201 is etched away last, in some embodiments, the second isolation structure 22 may be provided only in the isolation region 202.
In one embodiment, the cross section of the first metal film layer 211 of the second isolation structure 22 in the longitudinal direction is rectangular or inverted trapezoid. In the fourth intermediate structure shown in fig. 6, the first metal film layer 211 of the second isolation structure 22 has a rectangular cross section in the longitudinal direction. In other embodiments, the cross section of the first metal film layer 211 of the second isolation structure 22 in the longitudinal direction may also be an inverted trapezoid, where an inverted trapezoid refers to that the size of the first metal film layer 211 in the transverse direction gradually decreases along the direction from top to bottom. Here, the longitudinal direction refers to a lamination direction of the display panels.
After step 130, referring to fig. 7, the method for manufacturing a display panel further includes: a pixel defining layer 15 provided with pixel openings is formed in the display area 10, organic light emitting materials 16 are formed in the pixel openings of the display area 10 and the non-display area 20, a cathode layer 17 is formed on the organic light emitting materials 16, and an encapsulation layer 35 covering the display area 10 and the non-display area 20 is formed over the cathode layer 17. The encapsulation layer 35 may be a thin film encapsulation layer, and includes organic materials and inorganic materials alternately stacked.
Since the orthographic projection of the second metal film layer 212 of the second isolation structure 22 on the substrate 31 covers the orthographic projection of the first metal film layer 211 on the substrate 31, and the maximum width of the first metal film layer 211 is smaller than the width of the second metal film layer 212, when the organic light emitting material 16 is evaporated, the organic light emitting material 16 is not formed on the sidewall of the first metal film layer 211 of the second isolation structure 22, that is, the organic light emitting material 16 is broken at the second isolation structure 22, and the encapsulation layer 35 covers the sidewall of the first metal film layer 211. Since the organic light emitting material 16 is disconnected at the second isolation structure 22 and the encapsulation layer 35 covers the sidewall of the first metal film layer 211 of the second isolation structure 22, water and oxygen in the air cannot enter the display region 10 through the organic light emitting material 16 in the opening region 201, which is helpful to improve the service life of the display panel.
In step 140, a hole is opened in the opening region.
The display panel as shown in fig. 8 can be obtained through step 140.
In one embodiment, the opening may be performed by laser, and the film layer in the opening area is removed.
In the display panel 100 shown in fig. 1, the shape of the opening area 201 is circular. In other embodiments, the perforated area 201 may also be drop-shaped, rectangular, oval, etc. Furthermore, the isolation region 202 shown in fig. 1 is a closed ring, and in other embodiments, the isolation region 202 may also be immediately adjacent to the frame region, and in this case, in other embodiments, it is a non-closed ring.
In one embodiment, the method of manufacturing a display panel may further include: a recess structure is formed at a side of the display area 10 adjacent to the non-display area 20. Referring to fig. 9, the side of the display region 10 adjacent to the non-display region 20 is formed with a recess structure 19, and the recess structure 19 may have a ring shape. By forming the recessed structures 19 on the side portions of the display region 10 adjacent to the non-display region 20, the organic light emitting materials 16 are disconnected at the recessed structures 19, that is, the organic light emitting materials 16 are not formed on the walls of the recessed structures 19, so that water and oxygen in the air cannot enter the display region 10 through the recessed structures 19, and the service life of the display panel can be further improved.
In one embodiment, forming the recess structure at the side of the display region adjacent to the non-display region can be achieved by the following steps 160 and 170.
In step 160, forming a stacked structure in an edge region of the display region adjacent to the non-display region, where the stacked structure includes a third metal film layer and a fourth metal film layer on the third metal film layer, and the third metal film layer is flush with an edge of the fourth metal film layer; the third metal film layer, the fourth metal film layer and the at least one conductive layer are formed simultaneously.
Step 160 is performed concurrently with step 122. That is, during the etching of the first metal layer 101, the second metal layer 102, and the third metal layer 103, at least one conductive layer, the first isolation structure 21, and the stacked structure are simultaneously formed. Referring to fig. 9, at least one conductive layer is formed in the middle region of the display region 10, and a stacked structure 18 is formed in the edge region of the display region 10, where the stacked structure 18 includes a third metal film layer 181 and a fourth metal film layer 182 on the third metal film layer 181.
In step 170, while the electrode layer and the first metal film layer are etched, one side of the third metal film layer facing the non-display area is etched, so that the third metal film layer is recessed in a direction away from the non-display area relative to the fourth metal film layer.
Step 170 is performed concurrently with step 130. That is, the electrode layer and the first metal film layer are etched, and simultaneously, the side of the third metal film layer facing the non-display area is etched.
In one embodiment, the method for manufacturing the display panel may further include the following step 150: and forming an inorganic film layer or an organic film layer on the second metal film layer of the second isolation structure.
Step 150 may be completed after step 120 and before step 130.
Referring to fig. 8 or 9, a film 23 is formed on the second metal film 212 of the second isolation structure 22, and the film 23 may be an organic film or an inorganic film. By forming an inorganic film layer or an organic film layer on the second metal film layer 212 of the second isolation structure 22, the encapsulation performance of the non-display area 20 may be improved due to the greater adhesion between the encapsulation layer 35 and the inorganic film layer or the organic film layer. Moreover, the adhesion between the organic film layer or the inorganic film layer and the second metal film layer 212 can prevent the second metal film layer 212 from collapsing, thereby improving the stability of the second isolation structure 22.
In one embodiment, the film 23 formed on the second metal film of the second isolation structure 22 is an inorganic film, and the material of the inorganic film includes silicon nitride or silicon oxide.
In another embodiment, the film 23 formed on the second metal film of the second isolation structure 22 is an organic film. The organic film layer may be formed in the same process step as the planarization layer 13. By the arrangement, the formation of the organic film layer does not increase the preparation process.
According to the preparation method of the display panel, the second isolation structure is formed in the isolation area, the orthographic projection of the second metal film layer of the second isolation structure on the substrate covers the orthographic projection of the first metal film layer on the substrate, and the maximum width of the first metal film layer is smaller than the width of the second metal film layer, so that organic light-emitting materials cannot be formed on the side portion of the first metal film layer when the organic light-emitting materials are evaporated, namely the organic light-emitting material layer is disconnected at the second isolation structure, and water and oxygen in the air cannot enter the display area through the organic light-emitting materials in the opening area, and the service life of the display panel is prolonged. The preparation process of the second isolation structure comprises the steps of preparing the first isolation structure and etching the side part of the first metal film layer, the first isolation structure and at least one conducting layer of the display area are formed simultaneously, the etching of the side part of the first metal film layer and the etching of the electrode layer in the display area are carried out simultaneously, so that the preparation process of the display panel cannot be increased due to the preparation of the second isolation structure, and the preparation process of the display panel can be prevented from being complicated due to the formation of the second isolation structure.
The embodiment of the application also provides a display panel. Referring to fig. 1, the display panel includes a display area 10 and a non-display area 20, and the non-display area 20 includes an opening area 201 and an isolation area 202 adjacent to the display area 10 and the opening area 201. Referring to fig. 8 and 9, the isolation region 202 is provided with a second isolation structure 22, and the second isolation structure 22 surrounds the opening region 201.
The display panel 100 includes a substrate 31 located in the display area 10 and the isolation area 202, the display area 10 is provided with at least one conductive layer located on the substrate 31 and an electrode block located on the at least one conductive layer, the second isolation structure 22 includes a first metal film layer 211 and a second metal film layer 212 located on the first metal film layer 211, an orthographic projection of the second metal film layer 212 on the substrate 31 covers an orthographic projection of the first metal film layer 211 on the substrate 31, and a maximum width of the first metal film layer 211 is smaller than a width of the second metal film layer 212; the second isolation structure 22 is formed in the step of forming the at least one conductive layer and the electrode block.
The display panel 100 further includes an organic light emitting material 16 located on the electrode block and the second isolation structure, and an encapsulation layer 35 located on the organic light emitting material 16, wherein the organic light emitting material 16 is disconnected at the second isolation structure 22, and the encapsulation layer 35 at least covers a side portion of the first metal film layer 211.
In one embodiment, the encapsulation layer 35 may cover the display area 10 and the isolation area 202.
In one embodiment, the display region 10 includes a pixel circuit including a transistor 11 and a data line, and the at least one conductive layer includes a source 112 and a drain 113 of the transistor 11, or the at least one conductive layer includes the data line.
The at least one conductive layer comprises a first conductive film layer 104, a second conductive film layer 105 on the first conductive film layer 104, and a third conductive film layer 106 on the second conductive film layer 105; the first metal film layer 211 and the second conductive film layer 105 are located on the same layer, and the second metal film layer 212 and the third conductive film layer 106 are located on the same layer.
In one embodiment, the first conductive film layer 104, the third conductive film layer 106 and the second metal film layer 212 are made of titanium, and the second conductive film layer 105 and the first metal film layer 211 are made of aluminum.
In one embodiment, the display region 10 includes a plurality of sub-pixels including an anode block 141, the organic light emitting material 16 on the anode block 141, and a cathode 17 on the organic light emitting material 16, the electrode block being the anode block 141. The anode block 141 may be a stacked structure including two ito films and a silver film between the two ito films.
In one embodiment, the number of the second isolation structures 22 is two or more, and the two or more second isolation structures 22 are spaced apart in the isolation region 202. Wherein two or more includes two and more than two.
In one embodiment, the cross section of the first metal film layer 211 of the second isolation structure 22 in the longitudinal direction is rectangular or inverted trapezoid. When the cross section of the first metal film layer 211 in the stacking direction of the display panel is inverted trapezoid, it is more beneficial to avoid forming an organic light emitting material on the side of the first metal film layer 211.
In one embodiment, the display panel 100 further includes a film 23 formed over the second metal film 212 of the second isolation structure 22, and the film 23 is an inorganic film or an organic film.
In one embodiment, the film 23 is an inorganic film, and the material of the inorganic film includes silicon nitride or silicon oxide;
in one embodiment, the film 23 is an organic film, and the display region 10 further includes a planarization layer 13, and the organic film is formed in the same process step as the planarization layer 13.
In one embodiment, the side of the display region 10 adjacent to the non-display region 20 is provided with a recess structure 19, the organic light emitting material 16 is disconnected at the recess structure 19, and the encapsulation layer 35 covers at least the sidewall of the recess structure 35.
In one embodiment, the recessed structure 19 is formed at the same time as the at least one conductive layer and the electrode block are formed.
For the product embodiment, since it basically corresponds to the embodiment of the preparation method, the description of the relevant details and beneficial effects may be made by referring to the partial description of the embodiment of the preparation method, and no further description is given.
The embodiment of the application also provides a display device which comprises an equipment body, the display panel and the photosensitive device. The device area is located in an opening area of the display panel, and the photosensitive device can emit or collect light through the opening area.
Wherein, the photosensitive device can comprise a camera and/or a light sensor.
It is noted that in the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may also be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intermediate layer or element may also be present. Like reference numerals refer to like elements throughout.
In the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "plurality" means two or more unless expressly limited otherwise.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (10)
1. A method for manufacturing a display panel, the display panel including a display area and a non-display area, the non-display area including an opening area and a separation area adjacent to the display area and the opening area, the method comprising:
providing a substrate;
forming at least one conductive layer located in the display area and a first isolation structure located in the non-display area on the substrate, wherein the first isolation structure is at least located in the isolation area, the first isolation structure is an annular structure, and the display area surrounds the first isolation structure; the first isolation structure comprises a first metal film layer and a second metal film layer positioned on the first metal film layer, orthographic projections of the first metal film layer and the second metal film layer on the substrate are superposed, and the first isolation structure and the at least one conducting layer are formed simultaneously;
forming an electrode layer on the at least one conductive layer, and simultaneously etching the electrode layer and the first metal film layer to pattern the electrode layer, and etching the side portion of the first metal film layer to obtain a second isolation structure, wherein an orthographic projection of the second metal film layer on the substrate in the second isolation structure covers an orthographic projection of the first metal film layer on the substrate, and the maximum width of the first metal film layer is smaller than the width of the second metal film layer;
and opening holes in the hole opening area.
2. The method according to claim 1, wherein the display region includes a pixel circuit and a data line, the pixel circuit includes a transistor, the at least one conductive layer includes a source and a drain of the transistor, or the at least one conductive layer includes the data line, the at least one conductive layer includes a first conductive film layer, a second conductive film layer on the first conductive film layer, and a third conductive film layer on the second conductive film layer; the first metal film layer and the second conductive film layer are positioned on the same layer, and the second metal film layer and the third conductive film layer are positioned on the same layer;
preferably, the forming at least one conductive layer on the substrate in the display region and the first isolation structure on the substrate in the non-display region includes:
forming the first metal layer covering the display area and the non-display area, the second metal layer on the first metal layer, and a third metal layer on the second metal layer on the substrate;
patterning the first metal layer, the second metal layer and the third metal layer, wherein the first metal layer which is not etched in the display area is a first conductive film layer of the at least one conductive layer, the second metal layer which is not etched in the display area is a second conductive film layer of the at least one conductive layer, the third metal layer which is not etched in the display area is a third conductive film layer of the at least one conductive layer, and the second metal layer and the third metal layer which are not etched in the non-display area are respectively a first metal film layer and a second metal film layer of the first isolation structure;
preferably, the first metal layer and the third metal layer are made of titanium, and the second metal layer is made of aluminum.
3. A manufacturing method according to claim 1, wherein the display area includes a plurality of sub-pixels including an anode block, an organic light emitting material on the anode block, and a cathode on the organic light emitting material;
preferably, the etching the electrode layer and the first metal film layer to pattern the electrode layer, and simultaneously etching the side portion of the first metal film layer to obtain the second isolation structure includes:
etching the electrode layer and the first metal film layer simultaneously by adopting a wet etching process so as to pattern the electrode layer to obtain a plurality of anode blocks, and etching the side part of the first metal film layer to obtain a second isolation structure;
preferably, the number of the second isolation structures is more than two, and the more than two second isolation structures are arranged at intervals in the non-display area;
preferably, a cross section of the first metal film layer of the second isolation structure in a stacking direction of the display panels is rectangular or inverted trapezoidal.
4. The method of manufacturing according to claim 1, further comprising:
forming an inorganic film layer or an organic film layer on the second metal film layer of the second isolation structure;
preferably, the material of the inorganic film layer comprises silicon nitride or silicon oxide;
preferably, the display region further includes a planarization layer, and the organic film layer and the planarization layer are formed in the same process step.
5. The method of manufacturing according to claim 1, further comprising:
forming a recess structure at a side of the display region adjacent to the non-display region;
preferably, the forming of the recess structure at a side portion of the display region adjacent to the non-display region includes:
forming a laminated structure in an edge area of the display area adjacent to the non-display area, wherein the laminated structure comprises a third metal film layer and a fourth metal film layer located on the third metal film layer, and the third metal film layer is flush with the edge of the fourth metal film layer; the third metal film layer, the fourth metal film layer and the at least one conductive layer are formed simultaneously;
and etching one side of the third metal film layer facing the non-display area while etching the electrode layer and the first metal film layer so as to enable the third metal film layer to be sunken relative to the fourth metal film layer in a direction away from the non-display area.
6. A display panel is characterized in that the display panel comprises a display area and a non-display area, the non-display area comprises an opening area and an isolation area adjacent to the display area and the opening area, the isolation area is provided with a second isolation structure, and the second isolation structure surrounds the opening area;
the display panel comprises a substrate positioned in the display area and the isolation area, the display area is provided with at least one conducting layer positioned on the substrate and an electrode block positioned on the at least one conducting layer, the second isolation structure comprises a first metal film layer and a second metal film layer positioned on the first metal film layer, the orthographic projection of the second metal film layer on the substrate covers the orthographic projection of the first metal film layer on the substrate, and the maximum width of the first metal film layer is smaller than the width of the second metal film layer; the second isolation structure is formed in the step of forming the at least one conductive layer and the electrode block;
the display panel further comprises an organic light-emitting material and an encapsulation layer, wherein the organic light-emitting material is located on the electrode block and the second isolation structure, the encapsulation layer is located on the organic light-emitting material, the organic light-emitting material is disconnected at the second isolation structure, and the encapsulation layer at least covers the side portion of the first metal film layer.
7. The display panel according to claim 6, wherein the display region includes a pixel circuit and a data line, wherein the pixel circuit includes a transistor, wherein the at least one conductive layer includes a source and a drain of the transistor, or wherein the at least one conductive layer includes the data line;
the at least one conductive layer comprises a first conductive film layer, a second conductive film layer positioned on the first conductive film layer and a third conductive film layer positioned on the second conductive film layer; the first metal film layer and the second conductive film layer are positioned on the same layer, and the second metal film layer and the third conductive film layer are positioned on the same layer;
preferably, the first conductive film layer, the third conductive film layer and the second metal film layer are made of titanium, and the second conductive film layer and the first metal film layer are made of aluminum;
preferably, the display region includes a plurality of sub-pixels, and the sub-pixels include an anode block, an organic light emitting material on the anode block, and a cathode on the organic light emitting material;
preferably, the number of the second isolation structures is more than two, and the more than two second isolation structures are arranged at intervals in the isolation region;
preferably, a cross section of the first metal film layer of the second isolation structure in a stacking direction of the display panels is rectangular or inverted trapezoidal.
8. The display panel according to claim 6, further comprising an inorganic film layer or an organic film layer formed over the second metal film layer of the second isolation structure;
preferably, the material of the inorganic film layer comprises silicon nitride or silicon oxide;
preferably, the display region further includes a planarization layer, and the organic film layer and the planarization layer are formed in the same process step.
9. The display panel according to claim 6, wherein the display region is provided with a recess structure at a side thereof adjacent to the non-display region, the organic light emitting material is broken at the recess structure, and the encapsulation layer covers at least a sidewall of the recess structure.
10. A display device, comprising:
an apparatus body;
the display panel of any one of claims 6 to 9, overlaid on the device body; and
and the photosensitive device is used for emitting or collecting light and is arranged in the opening area.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910903505.1A CN110649177A (en) | 2019-09-24 | 2019-09-24 | Preparation method of display panel, display panel and display device |
| PCT/CN2020/095659 WO2021036411A1 (en) | 2019-08-28 | 2020-06-11 | Display panel, display device, and manufacturing method of display panel |
| US17/469,127 US20210408511A1 (en) | 2019-08-28 | 2021-09-08 | Display panels, display apparatuses and preparation methods of display panel |
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| CN201910903505.1A CN110649177A (en) | 2019-09-24 | 2019-09-24 | Preparation method of display panel, display panel and display device |
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| WO2022193706A1 (en) * | 2021-03-19 | 2022-09-22 | 京东方科技集团股份有限公司 | Light-emitting panel and preparation method therefor, and light-emitting apparatus |
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Application publication date: 20200103 |