CN112018265A - Display panel, manufacturing method and display device - Google Patents
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- CN112018265A CN112018265A CN202010937199.6A CN202010937199A CN112018265A CN 112018265 A CN112018265 A CN 112018265A CN 202010937199 A CN202010937199 A CN 202010937199A CN 112018265 A CN112018265 A CN 112018265A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/00—Organic light-emitting devices
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- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The embodiment of the application provides a display panel, a manufacturing method and display equipment. The display panel includes: a display area including a pixel area and a pinning area; the pixel region includes an organic light emitting layer; the pinning region is provided with a pinning structure, one side of the pinning structure is connected with the thin film transistor layer, at least part of the pinning structure except one side is connected with the packaging layer, and the mode that the organic light-emitting layer is directly connected with the thin film transistor layer and the packaging layer in the region is replaced. In the display panel provided by the embodiment of the application, the pinning structure is arranged to be respectively connected with the thin film transistor layer and the packaging layer, the organic light emitting layer is replaced by the pinning structure to bear shearing force, the shearing force is transmitted and diffused between the packaging layer and the thin film transistor layer, the performance of resisting transverse shearing force of the display panel is improved, the probability of peeling the organic light emitting layer from the upper layer to the lower layer is reduced, and the structural stability of the flexible display panel is improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel, a manufacturing method and display equipment.
Background
With the development of display technology, more and more flexible display devices are currently on the market. Compared with the traditional display device, the flexible display device has remarkable advantages such as reduced volume, portability, wide application range and the like.
However, in the manufacturing process of the conventional flexible display device, since the organic light emitting layer in the flexible display panel is manufactured by an evaporation process, the adhesion between the organic light emitting layer and the lower thin film transistor layer and the adhesion between the organic light emitting layer and the upper encapsulation layer are weaker, and the organic light emitting layer and the upper and lower layers are easily peeled off in the process of repeatedly bending the flexible display panel, so that the flexible display device cannot normally operate.
Disclosure of Invention
The application provides a display panel, a manufacturing method and display equipment aiming at the defects of the existing mode, and aims to solve the technical problem that in the process of repeatedly bending a flexible display panel, an organic light emitting layer is easily stripped from an upper layer and a lower layer in the prior art.
In a first aspect, an embodiment of the present application provides a display panel, including: a display area including a pixel area and a pinning area; the pixel region includes an organic light emitting layer;
the pinning region is provided with a pinning structure, one side of the pinning structure is connected with the thin film transistor layer, and at least one part except one side of the pinning structure is connected with the packaging layer.
In a second aspect, an embodiment of the present application provides a method for manufacturing a display panel, including:
preparing a thin film transistor layer on a substrate;
preparing a source-drain electrode conductive structure on one side of the thin film transistor layer far away from the substrate, wherein the source-drain electrode conductive structure comprises a pinning structure located in a pinning region of the substrate;
preparing an organic light-emitting layer on the source-drain electrode conductive structure and the side of the thin film transistor layer far away from the substrate, and exposing at least part of the pinning structure;
and preparing an encapsulation layer on the organic light-emitting layer and one side of the pinning structure far away from the substrate, and enabling the encapsulation layer to be connected with at least part of the pinning structure.
In a third aspect, an embodiment of the present application provides a display device, including the display panel provided in the first aspect.
The beneficial technical effects brought by the technical scheme provided by the embodiment of the application comprise:
an embodiment of the present application provides a display panel, including: a display area including a pixel area and a pinning area; the pixel region includes an organic light emitting layer; the pinning region is provided with a pinning structure, one side of the pinning structure is connected with the thin film transistor layer, at least part of the pinning structure except one side is connected with the packaging layer, and the mode that the organic light-emitting layer is directly connected with the thin film transistor layer and the packaging layer in the region is replaced. In the display panel provided by the embodiment of the application, the pinning structure is arranged to be respectively connected with the thin film transistor layer and the packaging layer, the organic light emitting layer is replaced by the pinning structure to bear shearing force, the shearing force is transmitted and diffused between the packaging layer and the thin film transistor layer, the performance of resisting transverse shearing force of the display panel is improved, the probability of peeling the organic light emitting layer from the upper layer to the lower layer is reduced, and the structural stability of the flexible display panel is improved.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure;
fig. 2 is an AA-direction cross-sectional view of the display panel in fig. 1 according to an embodiment of the present disclosure;
FIG. 3 is a top view of a pinning structure in the display panel of FIG. 1 according to an embodiment of the present application;
FIG. 4 is a cross-sectional view of the pinning structure of FIG. 3 taken along direction BB as provided in the examples of the application;
FIG. 5 is a top view of another pinning structure in the display panel of FIG. 1 according to an embodiment of the present application;
FIG. 6 is a cross-sectional view taken along the direction CC of the pinning structure of FIG. 5 provided in an embodiment of the application;
fig. 7 is a schematic flowchart of a method for manufacturing a display panel according to an embodiment of the present disclosure.
Description of reference numerals:
100-pixel region;
110-an organic light-emitting layer; 111-a layer of pixel material; 112-common organic layer; 113-cathode and optical tuning layer;
101-an active layer; 102-a first gate dielectric layer; 103-a first gate; 104-a second gate dielectric layer; 105-a second gate; 106-interlayer dielectric layer; 107-a planarization layer; 108-an anode; 109-pixel definition layer;
120-an encapsulation layer; 121-a first encapsulation layer; 122-a second encapsulation layer; 123-a third encapsulation layer;
130-source drain layer; 131-a first metal layer; 132-a second metal layer; 133-a third metal layer;
140-support column;
200-a pinning region;
210-a pinning structure; 211 — a first pinning layer; 212-second pinning layer; 213-third pinning layer;
300-substrate base plate; 301-barrier layer.
Detailed Description
Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
The embodiment of the application provides a display panel, and a schematic structural diagram of a display panel product is shown in fig. 1, and is shown in fig. 2, which is an AA-direction cross-sectional view of the display panel in fig. 1. The display panel includes: a display region including a pixel region 100 and a pinning region 200; the pixel region 100 includes an organic light emitting layer 110; the pinning region 200 is provided with a pinning structure 210, one side of the pinning structure 210 is connected to the thin film transistor layer, and at least a portion of the pinning structure 210 other than the one side is connected to the encapsulation layer 120.
In the display panel provided by the embodiment of the application, the pinning structure 210 is arranged to be respectively connected with the thin film transistor layer and the packaging layer 120, the mode that the organic light emitting layer 110 is directly connected with the thin film transistor layer and the packaging layer 120 in the region is replaced, the pinning structure 210 replaces the organic light emitting layer 110 to bear shearing force, the shearing force is transmitted and diffused between the packaging layer 120 and the thin film transistor layer, the performance of resisting transverse shearing force of the display panel is improved, the stripping probability of the organic light emitting layer 110 and the upper and lower layers is reduced, and the structural stability of the flexible display panel is improved.
Specifically, in the embodiment of the present application, the display region of the display panel includes a pixel region 100 and a pinning region 200; the pixel region 100 includes an organic light emitting layer 110; through setting up pinning structure 210 in pinning region 200, one side and thin film transistor layer lug connection of pinning structure 210, at least part and packaging layer 120 lug connection except one side in pinning structure 210 to make the organic luminescent layer 110 of pixel area 100 strengthen with the adhesive strength of the thin film transistor layer of lower floor and the packaging layer 120 of upper strata, thereby improve display panel's anti transverse shear force's performance, reduce organic luminescent layer 110 and thin film transistor layer and packaging layer's peeling probability, thereby improve flexible display panel's stability.
It should be noted that, in order to simplify the structure of the display panel and reduce the production cost of the display panel, in the embodiment of the present application, the pinning region 200 including the pinning structure 210 is disposed in the display region near the folding region of the display panel.
In an embodiment of the present application, the thin film transistor layer includes an active layer 101, a first gate dielectric layer 102, a first gate 103, a second gate dielectric layer 104, a second gate 105, an interlayer dielectric layer 106, a source drain layer 130, a planarization layer 107, an anode 108, and a pixel definition layer 109, which are sequentially stacked on one side of the substrate 300.
In the embodiment of the present application, the substrate 300 is made of a flexible material, such as PI (Polyimide), PET (Polyethylene Terephthalate), PDMS (Polydimethylsiloxane), PMMA (Polymethyl Methacrylate), and the like. The pixel circuit of the pixel region 100 includes an active layer 101, a first gate dielectric layer 102, a first gate 103, a second gate dielectric layer 104, a second gate 105, an interlayer dielectric layer 106 and a source drain layer 130, which are arranged on one side of a substrate 300; the specific structure of the pixel circuit is only one specific implementation manner provided in the embodiments of the present application, and the pixel circuit in the pixel area 100 may have different structures in an actual design and production process. As shown in fig. 2, in the embodiment of the present application, the source/drain layer 130 includes a first metal layer 131, a second metal layer 132, and a third metal layer 133, which are sequentially stacked, the first metal layer 131 and the third metal layer 133 are made of metal materials with stable chemical properties, such as Ti (titanium), Au (gold), and Pt (platinum), and the second metal layer 132 is made of metal materials with excellent conductivity, such as Al (aluminum), Cu (copper), and Ag (silver).
The planarization layer 107 covers the pixel circuits, the anode 108 is disposed on one side of the planarization layer 107 and electrically connected to the pixel circuits through the openings on the planarization layer 107, one side of the pixel definition layer 109 is used for preparing the organic light emitting layer 110, and the openings of the pixel definition layer 109 correspond to the anode 108.
It should be noted that in the embodiment of the present application, the substrate base plate 300 is further provided with the barrier layer 301, and the barrier layer 301 is located between the substrate base plate 300 and the active layer 101 and includes multiple layers of inorganic materials.
In one embodiment of the present application, the pinning structure 210 includes: the first pinning layer 211 is arranged on one side of the interlayer dielectric layer 106 far away from the substrate base plate 300; a second pinning layer 212 disposed on a side of the first pinning layer 211 away from the substrate base plate 300; a third pinning layer 213 disposed on a side of the second pinning layer 212 remote from the substrate base plate 300; the third pinning layer 213 covers a projected area of the second pinning layer 211 on the substrate 300 at a projected area of the substrate 300, and the second pinning layer 212 is provided with a concave portion in a direction parallel to the substrate 300. Optionally, the sides of the second pinned layer 212 are provided with recesses. The opening of the recess is directed toward the outside of the second pinned layer 212 in a direction parallel to the substrate base plate 300.
In the embodiment of the present application, the pinning structure 210 includes a first pinning layer 211, a second pinning layer 212, and a third pinning layer 213 stacked in sequence, and a lateral concave portion is provided on the second pinning layer 212, and in a direction parallel to the substrate 300, the cross section of the pinning structure 210 is i-shaped, so that when the encapsulation layer 120 is prepared on one side of the pinning structure 210, the encapsulation layer 120 fills the concave portion of the pinning structure 210, so that the encapsulation layer 120 and the pinning structure 210 are anchored and fastened together, thereby improving the performance of the display panel against transverse shear force, and reducing the probability of peeling the organic light emitting layer 110 from the thin film transistor layer and the encapsulation layer.
It should be noted that, in the embodiment of the present application, the organic light emitting layer 110 includes a pixel material layer 111, a common organic layer 112, and a cathode and optical adjustment layer 113, which are sequentially stacked; the layers of the organic light emitting layer 110 are deposited on one side of the pinning structure 210, the anode electrode 108, and the pixel defining layer 109 through an evaporation process. Of course, it is understood by those skilled in the art that the organic light emitting layer 110 deposited on one side of the pinning structure 210 may be removed through a mask process, so that the pinning structure 210, particularly one side of the third pinning layer 213, is directly connected to the encapsulation layer 120, thereby further improving the lateral shear resistance of the display panel, reducing the probability of peeling the organic light emitting layer 110 from the thin film transistor layer and the encapsulation layer, and improving the stability of the flexible display panel.
In one embodiment of the present application, the encapsulation layer 120 includes a first encapsulation layer 121 and a second encapsulation layer 122 disposed in a stack; the first encapsulation layer 121 is disposed on a side of the organic light emitting layer 110 away from the substrate 300 and a side of the third pinning layer 213 away from the second pinning layer 212, covers the third pinning layer 213, and partially fills a concave portion of the second pinning layer 212, and at least a portion of each of the first pinning layer 211, the second pinning layer 212, and the third pinning layer 213 is directly connected to the first encapsulation layer 121.
In the embodiment of the present application, the encapsulation layer 120 includes a first encapsulation layer 121 and a second encapsulation layer 122 stacked, the first encapsulation layer 121 is an organic material layer, and partially fills a concave portion of the second pinning layer 212, so that at least a portion of each of the first pinning layer 211, the second pinning layer 212, and the third pinning layer 213 is directly connected to the first encapsulation layer 121; the second encapsulation layer 122 is an inorganic material layer, and the boundary of the first encapsulation layer 121 is wrapped in the boundary of the second encapsulation layer 122, so that the second encapsulation layer 122 effectively isolates external moisture.
As understood by those skilled in the art, in order to improve the encapsulation effect of the encapsulation layer 120, in the embodiment of the present application, the encapsulation layer 120 further includes a third encapsulation layer 123, the first encapsulation layer 121, the second encapsulation layer 122 and the third encapsulation layer 123 are sequentially stacked, the first encapsulation layer 121 and the third encapsulation layer 123 are inorganic material layers, the second encapsulation layer 122 is an organic material layer, and the boundary of the second encapsulation layer 122 is wrapped in the boundary of the first encapsulation layer 121 and the third encapsulation layer 123, so that the first encapsulation layer 121 and the third encapsulation layer 123 effectively isolate external moisture, thereby improving the waterproof performance of the display panel. Meanwhile, the first packaging layer 121 made of inorganic material has higher adhesive force with the first pinning layer 211, the second pinning layer 212 and the third pinning layer 213 made of metal material, so that the transverse shearing force resistance of the display panel is further improved, and the stability of the flexible display panel is improved.
In one embodiment of the present application, the second pinning layer 212 is made of a material having an etch resistance less than the etch resistance of the material of the third pinning layer 213 and the first pinning layer 212.
In the embodiment of the present application, the first pinned layer 211, the second pinned layer 212 and the third pinned layer 213 stacked in sequence constitute the pinned structure 210, and the etching resistance of the material made of the second pinned layer 212 is set to be smaller than that of the material made of the third pinned layer 213 and the first pinned layer 212, so that in the wet etching process, the erosion rate of the middle second pinned layer 212 is made to be greater than that of the third pinned layer 213 and the first pinned layer 212, and the pinned structure 210 with the i-shaped cross section as shown in fig. 2 is formed. In the subsequent preparation process of the encapsulation layer, the first encapsulation layer 121 is enabled to partially fill the recess of the second pinning layer 212, so that the first pinning layer 211, the second pinning layer 212 and the third pinning layer 213 are all at least partially directly connected with the first encapsulation layer 121.
In one embodiment of the present application, the projection of the pinning structure 210 on the substrate base plate 300 is circular, elliptical, rounded rectangular, or rounded diamond. As shown in fig. 3, which is a top view of a pinning structure in a display panel, a projection of the pinning structure 210 on a substrate 300 is a circle; as shown in FIG. 4, the pinning structure of FIG. 3 is shown in cross-sectional view along the BB. As shown in fig. 5, which is a top view of another pinning structure in the display panel, the projection of the pinning structure 210 on the substrate base plate 300 is a circular ring; as shown in fig. 6, a cross-sectional view taken along the direction CC of the pinning structure shown in fig. 5. Compared with the pinning structure 210 with a circular projection, the area of the direct contact between the circular pinning structure 210 and the first packaging layer 121 is larger, and therefore, the bonding strength between the circular pinning structure 210 and the packaging layer 120 is higher, so that the performance of the display panel for resisting transverse shearing force is further improved, the stripping probability of the organic light emitting layer 110, the thin film transistor layer and the packaging layer 120 is reduced, and the stability of the flexible display panel is improved.
In one embodiment of the present application, the support posts 140 are disposed on a side of the pixel defining layer 109 remote from the substrate base plate. In the embodiment of the present application, the supporting pillars 140 are disposed in the pixel region 100 of the display panel and are used for supporting the mask in the subsequent manufacturing process.
In a second aspect, an embodiment of the present application provides a method for manufacturing a display panel, where a flow of the method for manufacturing a display panel is shown in fig. 7, and the method includes:
s401, preparing a thin film transistor layer on the substrate.
Optionally, in the embodiment of the present application, the thin-film transistor layer is prepared on one side of the flexible substrate 300. The method specifically comprises the following steps:
preparing an active layer 101 on one side of a substrate base plate 300;
preparing a first gate dielectric layer 102 on one side of the active layer 101 and the substrate 300;
preparing a first grid 103 on one side of the first grid dielectric layer 102;
preparing a second gate dielectric layer 104 on one side of the first gate dielectric layer 102 and one side of the first gate 103;
preparing a second gate 105 on one side of the second gate dielectric layer 104;
preparing an interlayer dielectric layer 106 on one side of the second gate 105 and the second gate dielectric layer 104; thereby preparing the pixel circuit film layer structure of the display panel pixel area 100.
S402, preparing a source and drain electrode conductive structure on one side of the thin film transistor layer far away from the substrate, wherein the source and drain electrode conductive structure comprises a pinning structure located in a pinning region of the substrate.
Alternatively, in the embodiment of the present application, the flexible substrate 300 includes the pixel region 100 and the pinning region 200. And obtaining an intermediate structure of a source/drain electrode conductive structure on one side of the thin film transistor layer far away from the substrate base plate 300 through a deposition process, and then patterning the intermediate structure of the source/drain electrode conductive structure to obtain the source/drain electrode conductive structure, wherein the source/drain electrode conductive structure comprises a pinning structure 210 located in a pinning area 200 of the substrate base plate 300 and a source/drain electrode layer 130 located in a pixel area 100 of the substrate base plate 300.
S403, preparing an organic light-emitting layer on the source-drain electrode conductive structure and the side, far away from the substrate, of the thin film transistor layer, and exposing at least part of the pinning structure.
Optionally, in this embodiment of the application, the organic light emitting layer 110 is formed on the side of the source-drain conductive structure and the thin-film transistor layer away from the substrate 300 by an evaporation process, and at least a portion of the pinning structure 210 is exposed, that is, in a direction parallel to the substrate 300, the organic light emitting layer 110 is not located on the circumferential side of the pinning structure 210.
S404, preparing an encapsulation layer on the side of the organic light-emitting layer and the pinning structure far away from the substrate, and enabling the encapsulation layer to be directly connected with at least part of the pinning structure.
Alternatively, in the embodiment of the present application, the encapsulation layer 120 is prepared by a deposition process on the side of the organic light emitting layer 110 and the pinning structure 210 away from the substrate 300, and the encapsulation layer 120 is directly connected with at least part of the pinning structure 210. It should be noted that, in the embodiments of the present application, the deposition process includes a chemical vapor deposition process and an atomic layer deposition process.
It should be noted that, before step S404 of the method for manufacturing a display panel, the method further includes: the organic light emitting layer 110 deposited on one side of the pinning structure 210 is removed through a mask process. Therefore, when the packaging layer 120 is prepared by subsequent deposition, the area of the direct connection between the pinning structure 210 and the packaging layer 120 is increased, so that the bonding strength between the pinning structure 210 and the packaging layer 120 is enhanced, the transverse shear force resistance of the display panel is further improved, the stripping probability of the organic light-emitting layer 110, the thin film transistor layer and the packaging layer is reduced, and the stability of the flexible display panel is improved.
In an embodiment of the present application, the step S402 of the method for manufacturing a display panel specifically includes:
preparing a source-drain electrode conductive structure on one side of the interlayer dielectric layer 106 of the thin film transistor layer by a deposition process, wherein the source-drain electrode conductive structure comprises a pinning middle structure;
preparing a flat layer 107 on one side of the source-drain electrode conductive structure, the pinning intermediate structure and the interlayer dielectric layer 106 through deposition and photoetching processes, and forming a hole in the flat layer 107 positioned in the pinning region 200 to expose at least part of the pinning intermediate structure;
an anode layer is prepared on one side of the flat layer 107 and the pinned intermediate structure through a deposition process, and the pinned intermediate structure is etched while the anode layer is patterned through a wet etching process to obtain an anode 108 and a pinned structure 210, respectively, and a second pinning layer 212 of the pinned structure 210 has a recess.
In an embodiment of the present application, in step S403 of the method for manufacturing a display panel, the method specifically includes:
preparing a pixel defining layer 109 at one side of the anode electrode 108 and the pinning structure 210 through a deposition process, and opening a hole in the pixel defining layer 109 at the pinning region 200 such that at least a portion of the pinning structure 210 is exposed;
preparing a supporting pillar 140 on one side of the pixel defining layer 109 through a deposition process;
the organic light emitting layer 110 is prepared on one side of the support posts 140, the pixel defining layer 109, and the pinning structure 210.
In a third aspect, embodiments of the present application provide a display panel device, including the display panel provided in the above embodiments.
By applying the embodiment of the application, at least the following beneficial effects can be realized:
1. in the display panel provided by the embodiment of the application, the pinning structure 210 is arranged to be respectively connected with the thin film transistor layer and the packaging layer 120, the mode that the organic light emitting layer 110 is directly connected with the thin film transistor layer and the packaging layer 120 in the region is replaced, the pinning structure 210 replaces the organic light emitting layer 110 to bear shearing force, the shearing force is transmitted and diffused between the packaging layer 120 and the thin film transistor layer, the performance of resisting transverse shearing force of the display panel is improved, the stripping probability of the organic light emitting layer 110 and the upper and lower layers is reduced, and the structural stability of the flexible display panel is improved.
2. In the display panel provided in the embodiment of the application, the pinning structure 210 includes the first pinning layer 211, the second pinning layer 212, and the third pinning layer 213 stacked in sequence, and the second pinning layer 212 is provided with a lateral recess, and in a direction parallel to the substrate 300, the cross section of the pinning structure 210 is i-shaped, so that when the encapsulation layer 120 is prepared on one side of the pinning structure 210, the encapsulation layer 120 fills the recess of the pinning structure 210, so that the encapsulation layer 120 and the pinning structure 210 are anchored and fastened together, thereby improving the performance of the display panel against transverse shear force, and reducing the probability of peeling the organic light emitting layer 110 from the thin film transistor layer and the encapsulation layer.
Those of skill in the art will appreciate that the various operations, methods, steps in the processes, acts, or solutions discussed in this application can be interchanged, modified, combined, or eliminated. Further, other steps, measures, or schemes in various operations, methods, or flows that have been discussed in this application can be alternated, altered, rearranged, broken down, combined, or deleted. Further, steps, measures, schemes in the prior art having various operations, methods, procedures disclosed in the present application may also be alternated, modified, rearranged, decomposed, combined, or deleted.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and may be performed in other orders unless explicitly stated herein. Moreover, at least a portion of the steps in the flow chart of the figure may include multiple sub-steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, which are not necessarily performed in sequence, but may be performed alternately or alternately with other steps or at least a portion of the sub-steps or stages of other steps.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.
Claims (10)
1. A display panel, comprising: a display area including a pixel region and a pinning region; the pixel region includes an organic light emitting layer;
the pinning region is provided with a pinning structure, one side of the pinning structure is connected with the thin film transistor layer, and at least part of the pinning structure except the one side is connected with the packaging layer.
2. The display panel of claim 1, wherein the thin film transistor layer comprises an active layer, a first gate dielectric layer, a first gate electrode, a second gate dielectric layer, a second gate electrode, an interlayer dielectric layer, a source drain layer, a planarization layer, an anode and a pixel definition layer, which are sequentially stacked on one side of the substrate.
3. The display panel of claim 2, wherein the pinning structure comprises:
the first pinning layer is arranged on one side of the interlayer dielectric layer far away from the substrate;
the second pinning layer is arranged on one side of the first pinning layer far away from the substrate base plate;
the third pinning layer is arranged on one side of the second pinning layer far away from the substrate base plate;
the third pinning layer covers a projected area of the second pinning layer on the substrate base plate in a projected area of the substrate base plate, and the second pinning layer is provided with a concave portion in a direction parallel to the substrate base plate.
4. The display panel according to claim 3, wherein the encapsulation layer comprises a first encapsulation layer and a second encapsulation layer arranged in a stack;
the first packaging layer is arranged on one side of the organic light emitting layer far away from the substrate base plate and one side of the third pinning layer far away from the second pinning layer, covers the third pinning layer and partially fills the concave part, and at least part of the first pinning layer, the second pinning layer and the third pinning layer are directly connected with the first packaging layer.
5. The display panel according to claim 3, wherein the etching resistance of the second pinning layer formation material is smaller than the etching resistance of the third pinning layer formation material and the first pinning layer formation material.
6. The display panel of claim 3, wherein the projection of the pinning structure on the substrate base plate is circular, elliptical, rounded rectangular or rounded rhombus.
7. The display panel according to claim 2, wherein a side of the pixel defining layer away from the substrate base plate is provided with a support post.
8. A method for manufacturing a display panel, comprising:
preparing a thin film transistor layer on a substrate;
preparing a source-drain electrode conductive structure on one side of the thin film transistor layer far away from the substrate, wherein the source-drain electrode conductive structure comprises a pinning structure located in a pinning region of the substrate;
preparing an organic light-emitting layer on the source-drain electrode conductive structure and one side of the thin film transistor layer far away from the substrate, and exposing at least part of the pinning structure;
and preparing an encapsulation layer on the organic light-emitting layer and one side of the pinning structure far away from the substrate, and enabling the encapsulation layer to be connected with at least part of the pinning structure.
9. The method according to claim 8, wherein a source-drain conductive structure is formed on a side of the thin-film transistor layer away from the substrate, the source-drain conductive structure includes a pinning structure located in a pinning region of the substrate, and the method specifically includes:
preparing the source and drain electrode conductive structure on one side of the interlayer dielectric layer of the thin film transistor layer, wherein the source and drain electrode conductive structure comprises a pinning middle structure;
preparing a flat layer on one side of the source-drain electrode conductive structure, the pinning intermediate structure and the interlayer dielectric layer, and forming a hole in the flat layer positioned in the pinning region to expose at least part of the pinning intermediate structure;
and preparing anode layers on one sides of the flat layer and the pinning intermediate structure, patterning the anode layers and etching the pinning intermediate structure at the same time to respectively obtain an anode and a second pinning layer of the pinning structure.
10. A display device characterized by comprising the display panel according to any one of claims 1 to 7.
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| CN106449702A (en) * | 2016-09-20 | 2017-02-22 | 上海天马微电子有限公司 | Organic light emitting display panel and manufacturing method |
| CN109802052A (en) * | 2019-01-25 | 2019-05-24 | 上海天马微电子有限公司 | A kind of organic light emitting display panel and preparation method thereof |
| CN110265583A (en) * | 2019-07-26 | 2019-09-20 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, display device |
| CN110649177A (en) * | 2019-09-24 | 2020-01-03 | 云谷（固安）科技有限公司 | Preparation method of display panel, display panel and display device |
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| CN106449702A (en) * | 2016-09-20 | 2017-02-22 | 上海天马微电子有限公司 | Organic light emitting display panel and manufacturing method |
| CN109802052A (en) * | 2019-01-25 | 2019-05-24 | 上海天马微电子有限公司 | A kind of organic light emitting display panel and preparation method thereof |
| CN110265583A (en) * | 2019-07-26 | 2019-09-20 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, display device |
| CN110649177A (en) * | 2019-09-24 | 2020-01-03 | 云谷（固安）科技有限公司 | Preparation method of display panel, display panel and display device |
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