CN110637376A - 光伏器件封装 - Google Patents

光伏器件封装 Download PDF

Info

Publication number
CN110637376A
CN110637376A CN201880033074.1A CN201880033074A CN110637376A CN 110637376 A CN110637376 A CN 110637376A CN 201880033074 A CN201880033074 A CN 201880033074A CN 110637376 A CN110637376 A CN 110637376A
Authority
CN
China
Prior art keywords
layer
electrode
layers
stoichiometric oxide
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880033074.1A
Other languages
English (en)
Chinese (zh)
Inventor
M·D·埃文
K·米埃尔卡莱克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cubic Perovskite LLC
Original Assignee
Hee Solar LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hee Solar LLC filed Critical Hee Solar LLC
Publication of CN110637376A publication Critical patent/CN110637376A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2018—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte characterised by the ionic charge transport species, e.g. redox shuttles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2077—Sealing arrangements, e.g. to prevent the leakage of the electrolyte
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2081—Serial interconnection of cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN201880033074.1A 2017-04-14 2018-04-11 光伏器件封装 Pending CN110637376A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/488,151 US12046425B2 (en) 2017-04-14 2017-04-14 Photovoltaic device encapsulation
US15/488,151 2017-04-14
PCT/US2018/027073 WO2018191358A1 (en) 2017-04-14 2018-04-11 Photovoltaic device encapsulation

Publications (1)

Publication Number Publication Date
CN110637376A true CN110637376A (zh) 2019-12-31

Family

ID=63790258

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880033074.1A Pending CN110637376A (zh) 2017-04-14 2018-04-11 光伏器件封装

Country Status (6)

Country Link
US (1) US12046425B2 (enExample)
EP (1) EP3610515A4 (enExample)
JP (1) JP7315467B2 (enExample)
KR (1) KR102627245B1 (enExample)
CN (1) CN110637376A (enExample)
WO (1) WO2018191358A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111477751A (zh) * 2020-05-18 2020-07-31 中国华能集团有限公司 一种柔性太阳能电池及其制备方法
CN119144116A (zh) * 2024-09-05 2024-12-17 珠海市板明科技有限公司 高频线路板用塞孔树脂、高频线路板及制备方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2963010B1 (en) * 2014-07-04 2018-02-21 Novaled GmbH Electronic device and compound
KR102570856B1 (ko) * 2017-07-21 2023-08-25 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 페로브스카이트 태양전지 및 이를 포함하는 탬덤 태양전지
GB201820427D0 (en) * 2018-12-14 2019-01-30 Univ Oxford Innovation Ltd Device interlayer
US10727428B1 (en) * 2019-02-01 2020-07-28 Natioinal Technology & Engineering Solutions Of Sa Organic-semiconducting hybrid solar cell
US20210036249A1 (en) * 2019-08-02 2021-02-04 The Florida State University Research Foundation, Incorporated Systems and methods for bulk semiconductor sensitized solid state upconversion
CN110718635A (zh) * 2019-10-22 2020-01-21 吉林大学 一种钙钛矿太阳能电池的薄膜封装方法
CN111003741B (zh) * 2019-11-14 2021-11-02 湖北大学 一种二硫化铁掺杂三硫化二钼多孔系统及其制备方法和应用
KR102496956B1 (ko) 2020-10-28 2023-02-06 포항공과대학교 산학협력단 박막 트랜지스터 및 이의 제조 방법
EP4012794A1 (en) * 2020-12-11 2022-06-15 Julius-Maximilians-Universität Würzburg Emission of electromagnetic radiation and control of properties of the emitted electromagnetic radiation
CN115207219B (zh) * 2021-04-13 2023-10-03 宁德时代新能源科技股份有限公司 钙钛矿太阳能电池及其制备方法、用电设备
IL309370B2 (en) 2021-06-16 2025-07-01 Conti Spe Llc Mechanically stacked solar transmissive cells or modules
JP7660042B2 (ja) * 2021-07-28 2025-04-10 日産自動車株式会社 光電変換素子
KR102838135B1 (ko) * 2024-02-15 2025-07-24 충남대학교산학협력단 실리콘 페로브스카이트 탠덤 소자 제조 방법
US12414402B1 (en) 2025-01-03 2025-09-09 Conti Innovation Center, Llc Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034489A (ja) * 2008-06-30 2010-02-12 Mitsubishi Chemicals Corp 膜状太陽電池及び太陽電池パネル
CN104769736A (zh) * 2012-09-18 2015-07-08 埃西斯创新有限公司 光电器件
CN106233482A (zh) * 2014-04-23 2016-12-14 株式会社Lg化学 有机无机混合太阳能电池

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3947575B2 (ja) * 1994-06-10 2007-07-25 Ｈｏｙａ株式会社 導電性酸化物およびそれを用いた電極
WO2003040441A1 (fr) * 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
KR100662297B1 (ko) 2002-10-18 2007-01-02 엘지전자 주식회사 유기 ｅｌ 소자
CN100481524C (zh) * 2003-09-10 2009-04-22 大日本印刷株式会社 太阳能电池组件用填充材料层、太阳能电池组件
JP4583025B2 (ja) * 2003-12-18 2010-11-17 Ｊｘ日鉱日石エネルギー株式会社 ナノアレイ電極の製造方法およびそれを用いた光電変換素子
US20070012353A1 (en) * 2005-03-16 2007-01-18 Vhf Technologies Sa Electric energy generating modules with a two-dimensional profile and method of fabricating the same
US20070068571A1 (en) 2005-09-29 2007-03-29 Terra Solar Global Shunt Passivation Method for Amorphous Silicon Thin Film Photovoltaic Modules
US20090044864A1 (en) * 2007-08-13 2009-02-19 University Of Southern California Organic photosensitive optoelectronic devices with triplet harvesting
CN101836307A (zh) * 2007-08-17 2010-09-15 西北大学 p型半导体镍氧化物在体相异质结太阳能电池中作为增效阳极界面层
US10103359B2 (en) 2008-04-09 2018-10-16 Agency For Science, Technology And Research Multilayer film for encapsulating oxygen and/or moisture sensitive electronic devices
DE102009000450A1 (de) * 2009-01-28 2010-07-29 Evonik Degussa Gmbh Transparente, witterungsbeständige Barrierefolie, Herstellung durch Lamination, Extrusionslamination oder Extrusionbeschichtung
JP2011155237A (ja) 2009-12-28 2011-08-11 Hitachi Ltd 化合物薄膜太陽電池、化合物薄膜太陽電池の製造方法、および化合物薄膜太陽電池モジュール
JP2012064645A (ja) 2010-09-14 2012-03-29 Mitsubishi Chemicals Corp 有機光電変換素子及びその製造方法
WO2012046326A1 (ja) * 2010-10-07 2012-04-12 グエラテクノロジー株式会社 太陽電池
KR101849268B1 (ko) * 2011-05-13 2018-04-18 한국전자통신연구원 빛과 전압 스트레스에 강한 산화물 박막 트랜지스터 및 그의 제조 방법
FR2983119B1 (fr) * 2011-11-30 2013-11-22 Arkema France Film multicouche a base de polyamides pour panneau arriere de module photovoltaique
WO2014084701A1 (ko) 2012-11-30 2014-06-05 주식회사 엘지화학 유기전자소자용 기판
US20140182650A1 (en) * 2012-12-28 2014-07-03 Nanosolar, Inc. Module integrated circuit
US9416279B2 (en) * 2013-11-26 2016-08-16 Hunt Energy Enterprises, L.L.C. Bi- and tri-layer interfacial layers in perovskite material devices
US9136408B2 (en) 2013-11-26 2015-09-15 Hunt Energy Enterprises, Llc Perovskite and other solar cell materials
US20160155974A1 (en) 2014-12-01 2016-06-02 The Regents Of The University Of California Complex pnictide metal halides for optoelectronic applications

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034489A (ja) * 2008-06-30 2010-02-12 Mitsubishi Chemicals Corp 膜状太陽電池及び太陽電池パネル
CN104769736A (zh) * 2012-09-18 2015-07-08 埃西斯创新有限公司 光电器件
CN106233482A (zh) * 2014-04-23 2016-12-14 株式会社Lg化学 有机无机混合太阳能电池

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111477751A (zh) * 2020-05-18 2020-07-31 中国华能集团有限公司 一种柔性太阳能电池及其制备方法
WO2021232682A1 (zh) * 2020-05-18 2021-11-25 中国华能集团有限公司 一种柔性太阳能电池及其制备方法
CN119144116A (zh) * 2024-09-05 2024-12-17 珠海市板明科技有限公司 高频线路板用塞孔树脂、高频线路板及制备方法

Also Published As

Publication number Publication date
EP3610515A1 (en) 2020-02-19
JP2020517111A (ja) 2020-06-11
US20180301288A1 (en) 2018-10-18
KR102627245B1 (ko) 2024-01-18
EP3610515A4 (en) 2021-02-24
US12046425B2 (en) 2024-07-23
JP7315467B2 (ja) 2023-07-26
WO2018191358A1 (en) 2018-10-18
KR20190131125A (ko) 2019-11-25

Similar Documents

Publication Publication Date Title
US12089485B2 (en) Multi-junction perovskite material devices
KR102627245B1 (ko) 광기전력 디바이스 캡슐화
CN108140731B (zh) 钙钛矿材料层加工
BR122020016555B1 (pt) Método para produção de material de perovskita e material de perovskita
JP7244343B2 (ja) ペルブスカイト材料のチタン酸塩界面層

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: Texas in the United States

Applicant after: Hunter perovskite Technology Co.,Ltd.

Address before: Texas in the United States

Applicant before: Xi Solar Co.,Ltd.

CB02 Change of applicant information
RJ01 Rejection of invention patent application after publication

Application publication date: 20191231

RJ01 Rejection of invention patent application after publication