CN110635041A - Thin film solar cell and preparation method thereof - Google Patents
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- CN110635041A CN110635041A CN201910825386.2A CN201910825386A CN110635041A CN 110635041 A CN110635041 A CN 110635041A CN 201910825386 A CN201910825386 A CN 201910825386A CN 110635041 A CN110635041 A CN 110635041A
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- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims description 10
- 238000010521 absorption reaction Methods 0.000 claims abstract description 67
- 230000005525 hole transport Effects 0.000 claims abstract description 43
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims abstract description 16
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims abstract description 16
- JEDHEMYZURJGRQ-UHFFFAOYSA-N 3-hexylthiophene Chemical compound CCCCCCC=1C=CSC=1 JEDHEMYZURJGRQ-UHFFFAOYSA-N 0.000 claims abstract description 15
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229920000642 polymer Polymers 0.000 claims abstract description 15
- 229940006186 sodium polystyrene sulfonate Drugs 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 42
- 239000011521 glass Substances 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 16
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000862 absorption spectrum Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 230000010287 polarization Effects 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 238000005286 illumination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention provides a thin-film solar cell, which utilizes the efficient absorption characteristic of perovskite on short wavelength and the efficient absorption characteristic of black phosphorus on long wavelength to form a laminated cell, can effectively widen the absorption spectrum range of the solar cell, and further improves the absorption efficiency; the battery can obviously reduce the thickness of the battery, and the efficiency of the perovskite/black phosphorus tandem solar battery is improved by more than 10% compared with that of a silicon-based solar battery under the condition of the same thickness; the electron transport layer composed of the fullerene derivative and the 3-hexylthiophene polymer and the hole transport layer composed of the poly (3, 4-ethylenedioxythiophene) and the sodium polystyrene sulfonate are used, so that the carrier transport efficiency can be greatly improved; compared with a single-junction solar cell, the tandem solar cell provided by the invention can break through the Shockley-quinse limit, the absorption efficiency is improved, the four-end parallel structure is adopted, short-circuit current matching of an upper cell and a lower cell is not required, and the selection of the forbidden band width is flexible and easy to realize.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a thin-film solar cell, a preparation method thereof and a cell.
Background
The existing laminated solar cell mainly comprises full perovskite or perovskite/crystalline silicon, the spectral absorption range of the laminated solar cell is 300 nm-1.1 um, crystalline silicon absorbs weakly in the range of 800 nm-1.1 um, a micro-nano structure needs to be designed to enhance the spectral absorption efficiency, and the preparation process of the cell structure is more complex.
In view of this, it is necessary to provide a thin film solar cell having a wide absorption spectrum range.
Disclosure of Invention
In view of the above, the present invention provides a thin film solar cell with a wide absorption spectrum.
On one hand, the invention provides a thin film solar cell, which comprises a top cell and a bottom cell, wherein the top cell and the bottom cell are connected in parallel, the top cell comprises a first substrate, a first hole transmission layer, a perovskite absorption layer, a first electron transmission layer and a first electrode layer which are sequentially attached, the bottom cell comprises a second substrate, a second hole transmission layer, a black phosphorus absorption layer, a second electron transmission layer and a second electrode layer which are sequentially attached, the first substrate and the second electrode layer are arranged in a right-to-side mode and form a gap, the first electron transmission layer is used for transmitting electrons to the perovskite absorption layer and generating holes in the perovskite absorption layer so as to generate loop current; the first hole transport layer is used for transporting holes generated by the perovskite absorption layer to the second electrode layer, and the second electron transport layer is used for transporting electrons to the black phosphorus absorption layer to generate loop current.
On the basis of the technical scheme, preferably, the thickness of the perovskite absorption layer is 220-280 nm, and the optical band gap of the perovskite absorption layer is 1.1-1.7 eV.
On the basis of the technical scheme, preferably, the thickness of the black phosphorus absorption layer is 120-180 nm, and the optical band gap of the black phosphorus absorption layer is 0.2-0.5 eV.
In addition to the above technical solutions, preferably, the first electrode layer and the second electrode layer are both indium tin oxide electrode layers.
In addition to the above technical solution, preferably, the first electron transport layer and the second electron transport layer are electron transport layers composed of fullerene derivatives and 3-hexylthiophene polymers, and the mass ratio of the fullerene derivatives to the 3-hexylthiophene polymers is (3-9): 1.
On the basis of the technical scheme, preferably, the first hole transport layer and the second hole transport layer are hole transport layers formed by poly (3, 4-ethylenedioxythiophene) and sodium polystyrene sulfonate, and the mass ratio of the poly (3, 4-ethylenedioxythiophene) to the sodium polystyrene sulfonate is 1 (0.5-1.5).
On the basis of the above technical solution, preferably, the second substrate includes a glass substrate and a silver coating deposited on the glass substrate, and the silver coating is attached to the second hole transport layer.
On the basis of the above technical solution, preferably, the first substrate includes a transparent glass substrate and an indium tin oxide layer deposited on the transparent glass substrate.
Preferably, the thickness of the first substrate is 35-45 nm, the thickness of the first electrode layer is 35-45 nm, the thickness of the first electron transport layer is 20-30 nm, the thickness of the first hole transport layer is 20-30 nm, the thickness of the silver coating is 480-520 nm, the thickness of the second hole transport layer is 20-30 nm, the thickness of the second electron transport layer is 20-30 nm, and the thickness of the second electrode layer is 35-45 nm.
On the other hand, the invention also provides a preparation method of the thin film solar cell, which comprises the following steps:
s1, preparing a bottom battery: depositing a silver coating on the glass substrate to prepare a second substrate, and then spraying a mixture of poly (3, 4-ethylenedioxythiophene) and sodium polystyrene sulfonate on the silver coating to prepare a second hole transport layer; then spin coating black phosphorus to the second hole transport layer to form a black phosphorus absorption layer; spraying a mixture of fullerene derivatives and 3-hexylthiophene polymers on the black phosphorus absorption layer to form a second electron transport layer; then evaporating indium tin oxide on the second electron transport layer to form a second electrode layer;
s2, preparing a top battery: evaporating indium tin oxide on transparent glass to prepare a first substrate, spraying a mixture of poly (3, 4-ethylenedioxythiophene) and sodium polystyrene sulfonate on the first substrate to obtain a first hole transport layer, coating perovskite on the first hole transport layer to obtain a perovskite absorption layer, spraying a mixture of a fullerene derivative and a 3-hexylthiophene polymer on the perovskite absorption layer to obtain a first electron transport layer, and evaporating indium tin oxide on the first electron transport layer to form a first electrode layer;
and S3, stacking the top cell on the bottom cell to obtain the thin-film solar cell.
Compared with the prior art, the thin film solar cell has the following beneficial effects:
(1) according to the invention, the perovskite is used for efficiently absorbing short wavelengths and the black phosphorus is used for efficiently absorbing long wavelengths to form the laminated solar cell, so that the absorption spectrum range of the solar cell can be effectively widened, and the absorption efficiency is further improved;
(2) the thin-film solar cell can obviously reduce the thickness of the cell, and the efficiency of the perovskite/black phosphorus tandem solar cell is improved by more than 10% compared with that of a silicon-based solar cell under the condition of the same thickness;
(3) the electron transport layer composed of the fullerene derivative and the 3-hexylthiophene polymer and the hole transport layer composed of the poly (3, 4-ethylenedioxythiophene) and the sodium polystyrene sulfonate are used, so that the carrier transport efficiency can be greatly improved;
(4) compared with a single-junction solar cell, the tandem solar cell provided by the invention can break through the Shockley-quinse limit, improves the absorption efficiency, adopts a parallel structure, does not need to match the short-circuit current of the upper cell and the lower cell, and is flexible in forbidden band width selection and easy to realize.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a thin film solar cell of the present invention;
FIG. 2 is a schematic representation of the refractive index of a perovskite absorber layer of the present invention;
FIG. 3 is a schematic diagram of the refractive index of the black phosphorus absorbing layer of the present invention in different polarization directions;
fig. 4 is an absorption spectrum of the thin film solar cell of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
As shown in fig. 1 to 4, the thin film solar cell of the present invention includes a top cell 1 and a bottom cell 2, wherein the top cell 1 includes: a first substrate 11, a first hole transport layer 15, a perovskite absorption layer 14, a first electron transport layer 13, and a first electrode layer 12; the bottom cell 2 includes: a second substrate 21, a second hole transport layer 22, a black phosphorus absorbing layer 23, a second electron transport layer 24, and a second electrode layer 25.
The top cell 1 comprises a first substrate 11, a first hole transport layer 15, a perovskite absorption layer 14, a first electron transport layer 13 and a first electrode layer 12 which are laminated and attached in sequence from bottom to top, and specifically, the first substrate 11 comprises a transparent glass substrate and an indium tin oxide layer which is an ITO and is deposited on the transparent glass substrate; the first hole transport layer 15 is a hole transport layer composed of poly (3, 4-ethylenedioxythiophene) (PEDOT) and sodium polystyrene sulfonate (PSS); the first electron transport layer 13 is an electron transport layer composed of fullerene derivative (PCBM) and 3-hexylthiophene polymer (P3HT), and the first electrode layer 12 is an indium tin oxide electrode layer. In practice, the top battery 1 further includes a glass cover plate 16, the glass cover plate 16 is covered on the first electrode layer 12, and the glass cover plate 16 is arranged as an antireflection layer, so that the reflectivity of sunlight can be reduced, and the absorption of light is improved, thereby improving the photoelectric efficiency.
The bottom battery 2 comprises a second substrate 21, a second hole transport layer 22, a black phosphorus absorption layer 23, a second electron transport layer 24 and a second electrode layer 25 which are sequentially attached from bottom to top, wherein the first substrate 11 and the second electrode layer 25 are arranged oppositely to form a gap, specifically, the second substrate 21 comprises a glass base body and a silver coating deposited on the glass base body, the silver coating is attached to the second hole transport layer 22, the second hole transport layer 22 is a hole transport layer formed by poly (3, 4-ethylenedioxythiophene) and sodium polystyrene sulfonate, and the second electron transport layer 24 is an electron transport layer formed by a fullerene derivative and a 3-hexylthiophene polymer; the second electrode layer 25 is an indium tin oxide electrode layer.
The top cell 1 and the bottom cell 2 are in parallel connection with each other with a gap formed therebetween, and after the solar cell receives illumination light, holes and electrons are generated in the perovskite absorption layer 14, wherein the holes move to the first hole transport layer 15, the electrons move to the first electron transport layer 13, and a loop current is generated in the top cell, in the process, the short wavelength of the solar spectrum is absorbed, and the remaining few short wavelength spectrum and the complete long wavelength spectrum are transmitted through the first electron transport layer 13 and the first substrate 11 and are incident into the bottom cell. In the bottom cell, the incident light is transmitted through the second electrode layer 2 and incident into the black phosphorus absorption layer 23, holes in the black phosphorus absorption layer 23 move to the second hole transport layer 22, electrons move to the second electron transport layer 24, and after contacting the top second electrode layer 25 and the bottom second substrate 21, a loop current is formed, in the process, a large amount of long-wavelength spectrum is absorbed and is complementary with the short-wavelength spectrum absorption of the top cell, and the cell absorption efficiency is improved. In addition, in the whole process, the loop currents of the top battery and the bottom battery are connected to the loop in a parallel mode, and the complete loop current is formed.
Further, the thickness of the perovskite absorption layer 14 is 220-280 nm, the optical band gap of the perovskite absorption layer 14 is 1.1-1.7 eV, the thickness of the perovskite absorption layer 14 is 250nm in practice, and black phosphorus is addedThe thickness of the absorption layer 23 is 120-180 nm, the optical band gap of the black phosphorus absorption layer 23 is 0.2-0.5 eV, in practice, the thickness of the black phosphorus absorption layer 23 is 160nm, the optical band gap is 0.3eV, and the thicknesses of the perovskite absorption layer 14 and the black phosphorus absorption layer 23 are optimized to show the absorption efficiency of the battery to the maximum extent on the basis of reducing the thickness of the battery. Fig. 2 shows a refractive index diagram of the perovskite absorption layer 14, where m is a real part and n is an imaginary part, and it can be seen from fig. 2 that the forbidden bandwidth of perovskite is about 800nm, the imaginary part smaller than 800nm is larger, and the imaginary part larger than 800nm is smaller, so that short wave is mainly absorbed. Fig. 3 shows a schematic diagram of refractive indexes of black phosphor in different polarization directions, where a and c are real and imaginary parts of the polarization direction of incident light parallel to the polarization direction of the armchair type of black phosphor, and b and d are real and imaginary parts of the polarization direction of incident light parallel to the polarization direction of the zigzag type of black phosphor, and the refractive indexes are different due to anisotropy of black phosphor. The long wave of the black phosphorus in the polarization direction of the armchair is larger than that of the perovskite, so that the defect of absorption of the perovskite in the long wave can be overcome, the perovskite is used as a short-wavelength (300-800 nm) absorption layer, the black phosphorus is used as a long-wavelength (800-3000 nm) absorption layer, the wide-spectrum absorption is realized, and the photoelectric conversion efficiency is obviously improved. Fig. 4 shows a spectrum of the thin-film solar cell absorption rate, wherein e is the absorption rate of the top cell, f is the absorption rate of the bottom cell, and g is the absorption rate of the thin-film solar cell, and it can be seen from the graph that the absorption efficiency of the cell in short wave can reach more than 60%, and the absorption efficiency in long wave can reach more than 20%. The short-circuit current of the top battery reaches 20.90mA/cm2The short-circuit current of the bottom battery reaches 12.58mA/cm2. Wherein the absorption efficiency of the solar cell is still greater than 30% at wavelengths greater than 2 microns.
Further, the thickness of the first substrate 11 is 35 to 45nm, and may be 40nm in practice; the thickness of the first electrode layer 12 is 35-45 nm, and actually 40 nm; the thickness of the first electron transport layer 13 is 20-30 nm, and practically 25 nm; the thickness of the first hole transport layer 15 is 20-30 nm, and practically 25 nm; the thickness of the silver coating is 480-520 nm, and actually 500 nm; the thickness of the second hole transport layer 22 is 20-30 nm, and practically 25 nm; the thickness of the second electron transport layer 24 is 20-30 nm, and practically 25 nm; the thickness of the second electrode layer 25 is 35-45 nm, and in practice 40 nm. The thickness of the battery can be reduced by setting the different layers to the above thicknesses.
The invention also provides a preparation method of the thin film solar cell, which comprises the following steps:
s1, preparation of bottom cell 2: depositing a silver coating on the glass substrate to prepare and obtain a second substrate 21, wherein the silver coating can be deposited by evaporation, magnetron sputtering, chemical vapor deposition and other methods; then spraying a mixture of poly (3, 4-ethylenedioxythiophene) and sodium polystyrene sulfonate on the silver coating to prepare a second hole transport layer 22, wherein the mass ratio of the poly (3, 4-ethylenedioxythiophene) to the sodium polystyrene sulfonate is 1 (0.5-1.5); then spin coating black phosphorus onto the second hole transport layer 22 to form a black phosphorus absorbing layer 23; spraying a mixture of fullerene derivatives and 3-hexylthiophene polymers on the black phosphorus absorption layer 23 to form a second electron transport layer 24, wherein the mass ratio of the fullerene derivatives to the 3-hexylthiophene polymers is (3-9): 1; then evaporating indium tin oxide on the second electron transport layer 24 to form a second electrode layer 25, and then annealing in a vacuum chamber by a rapid heating mode;
s2, preparation of top cell 1: evaporating indium tin oxide on transparent glass to prepare a first substrate 11, spraying a mixture of poly (3, 4-ethylenedioxythiophene) and sodium polystyrene sulfonate on the first substrate 11 to obtain a first hole transport layer 15, coating perovskite on the first hole transport layer 15 to obtain a perovskite absorption layer 14, spraying a mixture of a fullerene derivative and 3-hexylthiophene polymer on the perovskite absorption layer 14 to obtain a first electron transport layer 13, evaporating indium tin oxide on the first electron transport layer 13 to form a first electrode layer 12, and then annealing in a vacuum chamber in a rapid heating manner;
and S3, stacking the top cell 1 on the bottom cell 2, and then covering the glass cover plate 16 on the top cell 1 to obtain the thin-film solar cell.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A thin film solar cell comprising a top cell (1) and a bottom cell (2), said top cell (1) and said bottom cell (2) being connected in parallel to each other, characterized in that: the top battery (1) comprises a first substrate (11), a first hole transport layer (15), a perovskite absorption layer (14), a first electron transport layer (13) and a first electrode layer (12) which are sequentially attached, the bottom battery (2) comprises a second substrate (21), a second hole transport layer (22), a black phosphorus absorption layer (23), a second electron transport layer (24) and a second electrode layer (25) which are sequentially attached, and the first electron transport layer (13) is used for transporting electrons to the perovskite absorption layer (14) and generating holes in the perovskite absorption layer (14) so as to generate a loop current; the first hole transport layer (15) is used for transporting holes generated by the perovskite absorption layer (14) to the second electrode layer (25), and the second electron transport layer (24) is used for transporting electrons to the black phosphorus absorption layer 23, so that loop current is generated.
2. The thin film solar cell of claim 1, wherein: the thickness of the perovskite absorption layer (14) is 220-280 nm, and the optical band gap of the perovskite absorption layer (14) is 1.1-1.7 eV.
3. The thin film solar cell of claim 1, wherein: the thickness of the black phosphorus absorption layer (23) is 120-180 nm, and the optical band gap of the black phosphorus absorption layer (23) is 0.2-0.5 eV.
4. The thin film solar cell of claim 1, wherein: the first electrode layer (12) and the second electrode layer (25) are both indium tin oxide electrode layers.
5. The thin film solar cell of claim 1, wherein: the first electron transport layer (13) and the second electron transport layer (24) are electron transport layers composed of fullerene derivatives and 3-hexylthiophene polymers, and the mass ratio of the fullerene derivatives to the 3-hexylthiophene polymers is (3-9): 1.
6. The thin film solar cell of claim 1, wherein: the first hole transport layer (15) and the second hole transport layer (22) are hole transport layers formed by poly (3, 4-ethylenedioxythiophene) and sodium polystyrene sulfonate, and the mass ratio of the poly (3, 4-ethylenedioxythiophene) to the sodium polystyrene sulfonate is 1 (0.5-1.5).
7. The thin film solar cell of claim 1, wherein: the second substrate (21) comprises a glass base body and a silver coating deposited on the glass base body, wherein the silver coating is attached to the second hole transport layer (22).
8. The thin film solar cell of claim 1, wherein: the first substrate (11) comprises a transparent glass substrate and an indium tin oxide layer deposited on the transparent glass substrate.
9. The thin film solar cell of claim 7, wherein: the thickness of the first substrate (11) is 35-45 nm, the thickness of the first electrode layer (12) is 35-45 nm, the thickness of the first electron transport layer (13) is 20-30 nm, the thickness of the first hole transport layer (15) is 20-30 nm, the thickness of the silver coating is 480-520 nm, the thickness of the second hole transport layer (22) is 20-30 nm, the thickness of the second electron transport layer (24) is 20-30 nm, and the thickness of the second electrode layer (25) is 35-45 nm.
10. A method for manufacturing a thin film solar cell according to claim 1, wherein: the method comprises the following steps:
s1, preparation of a bottom battery (2): depositing a silver coating on the glass substrate to prepare a second substrate (21), and then spraying a mixture of poly (3, 4-ethylenedioxythiophene) and sodium polystyrene sulfonate on the silver coating to prepare a second hole transport layer (22); then spin coating black phosphorus onto the second hole transport layer (22) to form a black phosphorus absorption layer (23); spraying a mixture of a fullerene derivative and a 3-hexylthiophene polymer on the black phosphorus absorbing layer (23) to form a second electron transport layer (24); then evaporating indium tin oxide on the second electron transport layer (24) to form a second electrode layer (25);
s2, preparation of a top battery (1): evaporating indium tin oxide on transparent glass to prepare a first substrate (11), spraying a mixture of poly (3, 4-ethylenedioxythiophene) and sodium polystyrene sulfonate on the first substrate (11) to obtain a first hole transport layer (15), coating perovskite on the first hole transport layer (15) to obtain a perovskite absorption layer (14), spraying a mixture of fullerene derivative and 3-hexylthiophene polymer on the perovskite absorption layer (14) to obtain a first electron transport layer (13), and evaporating indium tin oxide on the first electron transport layer (13) to form a first electrode layer (12) on the first substrate (11);
and S3, stacking the top cell (1) on the bottom cell (2) to obtain the thin-film solar cell.
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Application publication date: 20191231 |