CN110635008B - 基于场控可调硅基发光的单片集成光电微显示器件 - Google Patents
基于场控可调硅基发光的单片集成光电微显示器件 Download PDFInfo
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- CN110635008B CN110635008B CN201910932154.7A CN201910932154A CN110635008B CN 110635008 B CN110635008 B CN 110635008B CN 201910932154 A CN201910932154 A CN 201910932154A CN 110635008 B CN110635008 B CN 110635008B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 50
- 239000010703 silicon Substances 0.000 title claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000004020 luminiscence type Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 122
- 239000002184 metal Substances 0.000 claims abstract description 122
- 238000002955 isolation Methods 0.000 claims abstract description 80
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 44
- 229920005591 polysilicon Polymers 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000005192 partition Methods 0.000 claims description 81
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 238000000605 extraction Methods 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims 6
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 238000005401 electroluminescence Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0041—Devices characterised by their operation characterised by field-effect operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
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CN201910932154.7A CN110635008B (zh) | 2019-09-29 | 2019-09-29 | 基于场控可调硅基发光的单片集成光电微显示器件 |
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CN201910932154.7A CN110635008B (zh) | 2019-09-29 | 2019-09-29 | 基于场控可调硅基发光的单片集成光电微显示器件 |
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CN110635008A CN110635008A (zh) | 2019-12-31 |
CN110635008B true CN110635008B (zh) | 2024-01-30 |
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CN201910932154.7A Active CN110635008B (zh) | 2019-09-29 | 2019-09-29 | 基于场控可调硅基发光的单片集成光电微显示器件 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101777568A (zh) * | 2010-01-14 | 2010-07-14 | 天津工业大学 | CMOS工艺兼容栅控p-n结正向注入型硅发光器件及其制作方法 |
CN103606537A (zh) * | 2013-12-06 | 2014-02-26 | 中国电子科技集团公司第四十七研究所 | Bicmos集成电路中双极器件的制造方法 |
CN210325840U (zh) * | 2019-09-29 | 2020-04-14 | 广安职业技术学院 | 全集成硅显示器中的反向发光器件 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US9653561B2 (en) * | 2013-03-12 | 2017-05-16 | Macronix International Co., Ltd. | Low on resistance semiconductor device |
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2019
- 2019-09-29 CN CN201910932154.7A patent/CN110635008B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101777568A (zh) * | 2010-01-14 | 2010-07-14 | 天津工业大学 | CMOS工艺兼容栅控p-n结正向注入型硅发光器件及其制作方法 |
CN103606537A (zh) * | 2013-12-06 | 2014-02-26 | 中国电子科技集团公司第四十七研究所 | Bicmos集成电路中双极器件的制造方法 |
CN210325840U (zh) * | 2019-09-29 | 2020-04-14 | 广安职业技术学院 | 全集成硅显示器中的反向发光器件 |
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Effective date of registration: 20200708 Address after: 611731 No. 4, Second Section of Jianbei Road, Chengdu City, Sichuan Province Applicant after: University of Electronic Science and Technology of China Applicant after: SICHUAN JINGHUI SEMICONDUCTOR Co.,Ltd. Applicant after: GUANG'AN VOCATIONAL AND TECHNICAL College Applicant after: CHENGDU ZHIXIN MICRO-TECH Co.,Ltd. Applicant after: Sichuan Xinhe Li Cheng Technology Co.,Ltd. Applicant after: CHONGQING ZHONGKE YUXIN ELECTRONIC Co.,Ltd. Applicant after: SICHUAN BLUE COLOUR ELECTRONICS TECHNOLOGY Co.,Ltd. Applicant after: Sichuan Suining Lipuxin Microelectronic Co.,Ltd. Address before: 611731 No. 4, Second Section of Jianbei Road, Chengdu City, Sichuan Province Applicant before: University of Electronic Science and Technology of China Applicant before: SICHUAN JINGHUI SEMICONDUCTOR Co.,Ltd. Applicant before: GUANG'AN VOCATIONAL AND TECHNICAL College Applicant before: CHENGDU ZHIXIN MICRO-TECH Co.,Ltd. Applicant before: Sichuan Xinhe Li Cheng Technology Co.,Ltd. Applicant before: CHONGQING ZHONGKE YUXIN ELECTRONIC Co.,Ltd. Applicant before: SICHUAN BLUE COLOUR ELECTRONICS TECHNOLOGY Co.,Ltd. Applicant before: GUANGDONG CHIPPACKING TECHNOLOGY Co.,Ltd. Applicant before: Sichuan Suining Lipuxin Microelectronic Co.,Ltd. |
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