CN110634964A - Efficient crystalline silicon solar cell and preparation method thereof - Google Patents

Efficient crystalline silicon solar cell and preparation method thereof Download PDF

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CN110634964A
CN110634964A CN201910920631.8A CN201910920631A CN110634964A CN 110634964 A CN110634964 A CN 110634964A CN 201910920631 A CN201910920631 A CN 201910920631A CN 110634964 A CN110634964 A CN 110634964A
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silicon substrate
silicon
type silicon
solar cell
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CN110634964B (en
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张树德
魏青竹
况亚伟
钱洪强
丁可
揭建胜
张晓宏
李跃
连维飞
倪志春
刘玉申
杨希峰
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Suzhou University
Changshu Institute of Technology
Suzhou Talesun Solar Technologies Co Ltd
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Suzhou University
Changshu Institute of Technology
Suzhou Talesun Solar Technologies Co Ltd
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Abstract

The invention discloses a high-efficiency crystalline silicon solar cell, which comprises: the tunneling oxide layer, the N-type polycrystalline silicon, the back passivation layer, the P-type silicon, the first metal electrode and the second metal electrode are all provided with a groove, the first metal electrode penetrates through the groove to be in ohmic contact with the P-type silicon, the back passivation layer is arranged between the first metal electrode and the N-type polycrystalline silicon at intervals, and the second metal electrode penetrates through the back passivation layer and is in ohmic contact with the N-type polycrystalline silicon; therefore, the battery preparation process is simplified, multiple masks and cleaning are not needed, the yield and the capacity of the battery are improved, and the production cost is reduced.

Description

Efficient crystalline silicon solar cell and preparation method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a high-efficiency crystalline silicon solar cell and a preparation method thereof.
Background
Compared with the conventional crystalline silicon solar cell, the front surface of the IBC (intermediate Back contact) cell has no electrode, and light rays cannot be shielded, so that the optical loss is less, the photoelectric conversion efficiency can be higher, and the method is a research hotspot in the photovoltaic industry. At present, most of IBC (ion-beam copper-based carbon) batteries are researched on the basis of N-type silicon wafers, but the N-type silicon wafers are high in cost and not beneficial to commercial application, and with the continuous improvement of minority carrier lifetime of a P-type silicon substrate, the P-type IBC batteries become an important development direction of future crystalline silicon solar batteries.
The tunneling oxide layer and the doped polycrystalline silicon are combined by the passivation contact technology, so that the excellent surface passivation property is obtained, the separation and collection of carriers can be realized, and the carrier transmission resistance is low, so that the photoelectric conversion efficiency of the P-type IBC cell can be further improved by applying the passivation contact technology to the P-type IBC cell. However, the current P-type IBC battery based on the passivation contact structure has a complex preparation process, requires multiple masks and cleaning, and affects the yield and productivity of the battery.
Therefore, the emergence of a high-efficiency crystalline silicon solar cell and a preparation method thereof is urgently needed, the cell preparation process is simplified, multiple masks and cleaning are not needed, the cell yield and capacity are improved, and the production cost is reduced.
Disclosure of Invention
In order to solve the technical problems, the invention provides the high-efficiency crystalline silicon solar cell and the preparation method thereof, which simplify the cell preparation process, do not need multiple masks and cleaning, and improve the yield and the capacity of the cell.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a high efficiency crystalline silicon solar cell, comprising: the tunneling oxide layer, the N-type polycrystalline silicon, the back passivation layer, the P-type silicon, the first metal electrode and the second metal electrode are all provided with grooves, the first metal electrode penetrates through the grooves to be in ohmic contact with the P-type silicon, the back passivation layer is arranged between the first metal electrode and the N-type polycrystalline silicon at intervals, and the second metal electrode penetrates through the back passivation layer to be in ohmic contact with the N-type polycrystalline silicon.
According to the efficient crystalline silicon solar cell and the preparation method thereof, the preparation flow of the cell is simplified, multiple masks and cleaning are not needed, and the yield and the capacity of the cell are improved.
On the basis of the technical scheme, the following improvements can be made:
preferably, N-type polysilicon is disposed on the back surface of the tunneling oxide layer, and the tunneling oxide layer and the N-type polysilicon are connected to form a passivation contact structure.
Preferably, a back passivation layer is arranged on the back surface of the N-type polycrystalline silicon, and the back passivation layer may be silicon nitride or a stack of silicon oxide and silicon nitride.
Preferably, the front surface of the tunneling oxide layer is provided with a P-type silicon substrate.
Preferably, the front surface of the P-type silicon substrate is provided with a front passivation layer, and the front passivation layer is a laminated layer of aluminum oxide and silicon nitride.
Preferably, the first metal electrode is aluminum, the second metal electrode 8 is silver, the P-type silicon is a local back surface field, and the P-type silicon is aluminum-doped silicon.
As a preferable scheme, the preparation method of the high-efficiency crystalline silicon solar cell is characterized by comprising the following steps of:
1) cleaning the P-type silicon substrate, and polishing the back of the P-type silicon substrate;
2) preparing a tunneling oxide layer and N-type polycrystalline silicon on the back surface of the P-type silicon substrate to form a passivation contact structure, and forming phosphorosilicate glass on the N-type polycrystalline silicon;
3) removing the winding plating on the front surface of the P-type silicon substrate, and texturing on the front surface of the P-type silicon substrate;
4) removing phosphorosilicate glass on the back surface of the P-type silicon substrate, performing laser grooving on the back surface of the P-type silicon substrate, and removing N-type polycrystalline silicon and a tunneling oxide layer in a laser grooving area;
5) depositing a front passivation layer and a back passivation layer on the front surface and the back surface of the P-type silicon substrate respectively;
6) laser grooving is carried out on the back of the P-type silicon substrate, the grooving graph and the grooving graph in the step 4) are grid lines, the grooving width is smaller than that in the step 4), and a back passivation layer is removed in a laser grooving area;
7) and printing aluminum paste and silver paste on the back of the P-type silicon substrate, aligning the aluminum paste printing to the laser grooving area, and sintering to complete metallization.
As a preferable scheme, in the step 2), a tunneling oxide layer is grown on the back surface of the P-type silicon substrate by thermal oxidation, intrinsic polycrystalline silicon is deposited on the tunneling oxide layer by a low-pressure chemical vapor deposition method, phosphorus is doped into the intrinsic polycrystalline silicon by a diffusion process, a passivation contact structure is formed on the back surface of the P-type silicon substrate, the passivation contact structure is a lamination of the tunneling oxide layer and the N-type polycrystalline silicon, and phosphorosilicate glass formed by diffusion is further arranged on the N-type polycrystalline silicon.
As a preferable scheme, in the step 3), the phosphorosilicate glass, the N-type polycrystalline silicon and the tunneling oxide layer which are plated in a winding mode are removed from the front surface of the P-type silicon substrate through hydrofluoric acid and nitric acid, the phosphorosilicate glass on the back surface of the P-type silicon substrate is reserved, the front surface of the P-type silicon substrate is subjected to texturing through an alkali solution, a textured surface structure is formed on the front surface of the P-type silicon substrate, and the N-type polycrystalline silicon on the back surface of the P-type silicon substrate is reserved through the phosphorosilicate glass on the back.
As a preferable scheme, aluminum paste and silver paste are printed on the back of the P-type silicon substrate in the step 7), the patterns printed with the aluminum paste and the silver paste are grid lines, the aluminum grid lines are aligned with the laser grooving area in the step 6), after sintering, aluminum-doped P-type silicon is formed at the interface of the aluminum paste and the P-type silicon substrate, the silver paste is burnt through a back passivation layer, and a second metal electrode of the silver paste is in contact with the back N-type polycrystalline silicon.
Drawings
Fig. 1 is a structural diagram of a high-efficiency crystalline silicon solar cell according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing a high-efficiency crystalline silicon solar cell according to an embodiment of the present invention.
1. The structure of the silicon-based solar cell comprises a front passivation layer, 2. a P-type silicon substrate, 3. a tunneling oxide layer, 4. N-type polycrystalline silicon, 5. a back passivation layer, 6. P-type silicon, 7. a first metal electrode and 8. a second metal electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
In order to achieve the object of the present invention, as shown in fig. 1-2, a high efficiency crystalline silicon solar cell in this embodiment includes: the tunnel oxide layer 3, the N-type polysilicon 4, the back passivation layer 5, the P-type silicon 6, the first metal electrode 7 and the second metal electrode 8, wherein the tunnel oxide layer 3, the N-type polysilicon 4 and the back passivation layer 5 are all provided with a groove, the first metal electrode 7 penetrates through the groove to be in ohmic contact with the P-type silicon 6, the back passivation layer 5 is arranged between the first metal electrode 7 and the N-type polysilicon 4 at intervals, and the second metal electrode 8 penetrates through the back passivation layer 5 and is in ohmic contact with the N-type polysilicon 4.
According to the efficient crystalline silicon solar cell and the preparation method thereof, provided by the invention, the cell preparation process is simplified, multiple masks and cleaning are not needed, the cell yield and capacity are improved, and the production cost is reduced.
In some embodiments, N-type polysilicon 4 is disposed on the back of the tunnel oxide layer 3, and the tunnel oxide layer and the N-type polysilicon are connected to form a passivation contact structure.
By adopting the embodiment, the N-type polycrystalline silicon 4 is the phosphorus-doped N-type polycrystalline silicon, the structure is simple, the operation is convenient, the battery preparation process is simplified, multiple masks and cleaning are not needed, and the yield and the capacity of the battery are improved.
In some embodiments, the back surface of the N-type polysilicon 4 is provided with a back passivation layer 5, and the back passivation layer 5 may be silicon nitride or a stack of silicon oxide and silicon nitride.
By adopting the embodiment, the structure is simple, the operation is convenient, the battery preparation process is simplified, multiple masks and cleaning are not needed, and the yield and the productivity of the battery are improved.
In some embodiments, the front surface of the tunneling oxide layer 3 is provided with a P-type silicon substrate 2.
By adopting the embodiment, the structure is simple, the operation is convenient, the battery preparation process is simplified, multiple masks and cleaning are not needed, and the yield and the productivity of the battery are improved.
In some embodiments, the front surface of the P-type silicon substrate 2 is provided with a front passivation layer 1, and the front passivation layer 1 is a stack of aluminum oxide and silicon nitride.
With the above embodiment, the front passivation layer 1 is provided on the front surface of the P-type silicon substrate 2, and the front passivation layer 1 simultaneously functions as an antireflection.
In some embodiments, the first metal electrode 7 is aluminum, the second metal electrode 8 is silver, the P-type silicon 6 is a local back surface field, and the P-type silicon 6 is aluminum-doped silicon.
By adopting the embodiment, the structure is simple, the operation is convenient, the battery preparation process is simplified, multiple masks and cleaning are not needed, and the yield and the productivity of the battery are improved.
In some embodiments, a method for manufacturing a high-efficiency crystalline silicon solar cell includes the following steps:
1) cleaning the P-type silicon substrate 2, and polishing the back of the P-type silicon substrate 2;
2) preparing a tunneling oxide layer 3 and N-type polycrystalline silicon 4 on the back surface of a P-type silicon substrate 2 to form a passivation contact structure, and forming phosphorosilicate glass on the N-type polycrystalline silicon 4;
3) removing the winding plating on the front surface of the P-type silicon substrate 2, and texturing on the front surface of the P-type silicon substrate 2;
4) removing phosphorosilicate glass on the back surface of the P-type silicon substrate 2, performing laser grooving on the back surface of the P-type silicon substrate 2, and removing N-type polycrystalline silicon 4 and the tunneling oxide layer 3 in a laser grooving area;
5) depositing a front passivation layer 1 and a back passivation layer 5 on the front surface and the back surface of the P-type silicon substrate 2 respectively;
6) laser grooving is carried out on the back of the P-type silicon substrate 2, the grooving graph and the grooving graph in the step 4) are grid lines, the grooving width is smaller than that in the step 4), and a back passivation layer is removed in a laser grooving area;
7) and respectively printing aluminum paste and silver paste on the back surface of the P-type silicon substrate 2, aligning the aluminum paste printing to a laser grooving area, and sintering to complete metallization.
By adopting the embodiment, the battery preparation process is simplified, multiple masks and cleaning are not needed, and the yield and the productivity of the battery are improved.
In some embodiments, in the step 2), a tunneling oxide layer 3 is grown on the back surface of the P-type silicon substrate 2 by thermal oxidation, intrinsic polysilicon is deposited on the tunneling oxide layer 3 by a low-pressure chemical vapor deposition method, phosphorus is doped into the intrinsic polysilicon by a diffusion process, a passivation contact structure is formed on the back surface of the P-type silicon substrate 2, the passivation contact structure is a stack of the tunneling oxide layer 3 and N-type polysilicon 4, and phosphorosilicate glass formed by diffusion is further arranged on the N-type polysilicon 4.
By adopting the embodiment, the battery preparation process is simplified, multiple masks and cleaning are not needed, and the yield and the productivity of the battery are improved.
In some embodiments, in the step 3), the phosphorosilicate glass, the N-type polycrystalline silicon 4 and the tunneling oxide layer 3 which are plated around are removed from the front surface of the P-type silicon substrate 2 by hydrofluoric acid and nitric acid, the phosphorosilicate glass on the back surface of the P-type silicon substrate 2 is reserved, the front surface of the P-type silicon substrate 2 is subjected to texturing by an alkali solution, a textured structure is formed on the front surface of the P-type silicon substrate 2, and the N-type polycrystalline silicon 4 on the back surface of the P-type silicon substrate 2 is reserved through the phosphorosilicate glass on the back surface of the P.
By adopting the embodiment, the battery preparation process is simplified, multiple masks and cleaning are not needed, and the yield and the productivity of the battery are improved.
In some embodiments, the back side of the P-type silicon substrate 2 in step 7) is printed with aluminum paste and silver paste, both patterns of the printed aluminum paste and silver paste are grid lines, the aluminum grid lines are aligned with the laser grooving area in step 6), after sintering, the aluminum-doped P-type silicon 6 is formed at the interface of the aluminum paste and the P-type silicon substrate 2, the silver paste is burnt through the back passivation layer 5, and the silver paste second metal electrode 8 is in contact with the back side N-type polysilicon 4.
By adopting the embodiment, the battery preparation process is simplified, multiple masks and cleaning are not needed, and the yield and the productivity of the battery are improved.
The crystalline silicon solar cell structure provided by the invention is characterized in that the P-type silicon substrate 2 is a boron or gallium doped P-type silicon substrate, the front surface of the P-type silicon substrate 2 is provided with the front passivation layer 1, the front passivation layer 1 plays a role of antireflection at the same time, and the front passivation layer 1 can be a laminated layer of aluminum oxide and silicon nitride. The back of the P-type silicon substrate 2 is a tunneling oxide layer 3, and the tunneling oxide layer 3 may be silicon oxide. The back of the tunneling oxide layer 3 is provided with phosphorus-doped N-type polycrystalline silicon 4, and the tunneling oxide layer 3 and the N-type polycrystalline silicon 4 form a passivation contact structure. A back passivation layer 5 is disposed on the back surface of the N-type polysilicon 4, and the back passivation layer 5 may be silicon nitride or a stack of silicon oxide and silicon nitride. The tunneling oxide layer 3, the N-type polysilicon 4 and the passivation layer 5 are all provided with a groove, the first metal electrode 7 penetrates through the groove to form ohmic contact with the P-type silicon 6, the first metal electrode 7 can be aluminum, the P-type silicon 6 is also called a P-type local back surface field, and the P-type silicon 6 can be aluminum-doped silicon. The first metal electrode 7 is separated from the N-type polycrystalline silicon 4 through the passivation layer 5, and the first metal electrode 7 is prevented from being contacted with the N-type polycrystalline silicon 4 to cause electric leakage. In addition, the second metal electrode 8 penetrates through the back passivation layer 5 and forms ohmic contact with the N-type polysilicon 4, and the second metal electrode 8 may be silver.
The invention provides a preparation method of a crystalline silicon solar cell, which comprises the following steps:
1) cleaning the P-type silicon substrate 2 and polishing the back;
2) growing a tunneling oxide layer 3 on the back surface of a P-type silicon substrate 2 by using thermal oxidation, depositing intrinsic polycrystalline silicon on the tunneling oxide layer 3 by using LPCVD (low pressure chemical vapor deposition), doping phosphorus into the intrinsic polycrystalline silicon by using a diffusion process, forming a passivation contact structure on the back surface of the P-type silicon substrate 2, wherein the passivation contact structure is a lamination of the tunneling oxide layer 3 and N-type polycrystalline silicon 4, and forming phosphorosilicate glass by diffusion on the N-type polycrystalline silicon 4;
3) removing the phosphorus-silicon glass, the N-type polycrystalline silicon 4 and the tunneling oxide layer 3 which are plated in a winding mode from the front surface of the P-type silicon substrate 2 by using hydrofluoric acid and nitric acid, retaining the phosphorus-silicon glass on the back surface of the P-type silicon substrate 2, texturing the front surface of the P-type silicon substrate 2 by using an alkali solution, forming a textured surface structure on the front surface of the P-type silicon substrate 2, and protecting and retaining the N-type polycrystalline silicon 4 on the back surface of the P-type silicon substrate 2 by the phosphorus-silicon glass on the back surface of the P;
4) and removing the phosphorosilicate glass on the back surface of the P-type silicon substrate 2 by using hydrofluoric acid, carrying out laser grooving on the back surface, and removing the N-type polycrystalline silicon 4 and the tunneling oxide layer 3 in a grooving area, wherein the grooving graph is a grid line.
5) The back of the P-type silicon substrate 2 is thermally oxidized to form a silicon oxide thin layer, and the back is deposited with silicon nitride by PECVD (plasma enhanced chemical vapor deposition) to form a back passivation layer 5 composed of a silicon oxide and silicon nitride laminate. The front surface of the P-type silicon substrate 2 is deposited with aluminum oxide by ALD (atomic layer deposition) or PECVD, and the front surface of the P-type silicon substrate 2 is deposited with silicon nitride by PECVD, forming a front passivation layer 1 consisting of a stack of aluminum oxide and silicon nitride.
6) And (3) carrying out laser grooving on the back of the P-type silicon substrate 2, wherein the grooving pattern is the same as that of the step 4), but the width of the grid line is thinner, and removing the back passivation layer 5 in the grooving area to expose the P-type silicon substrate 2.
7) And (3) respectively printing aluminum paste and silver paste on the back surface of the P-type silicon substrate 2, wherein the printing patterns are grid lines, the aluminum grid lines are aligned to the laser grooving area in the step 6), after sintering, the aluminum-doped P-type silicon 6 is formed at the interface of the aluminum paste and the P-type silicon substrate 2, and the silver paste is burnt through the back passivation layer 5 and is contacted with the back N-type polycrystalline silicon 4.
The invention provides a high-efficiency crystalline silicon solar cell and a preparation method thereof, and the high-efficiency crystalline silicon solar cell has the following beneficial effects:
1) the N-type passivation contact structure is combined with the P-type local back surface field, and the battery preparation process is simple.
2) The phosphorosilicate glass formed by diffusion is used as a protective layer of the N-type polycrystalline silicon on the back surface, so that the texturing on the front surface of the P-type silicon substrate is realized, the problem of plating around the front surface of the P-type silicon substrate is solved, the process is simple, and the production cost is reduced.
An application of a preparation method of a high-efficiency crystalline silicon solar cell in a solar cell product.
The above is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, many variations and modifications can be made without departing from the inventive concept of the present invention, which falls into the protection scope of the present invention.

Claims (10)

1. A high-efficiency crystalline silicon solar cell, comprising: the tunneling oxide layer, the N-type polycrystalline silicon, the back passivation layer, the P-type silicon, the first metal electrode and the second metal electrode are all provided with grooves, the first metal electrode penetrates through the grooves to be in ohmic contact with the P-type silicon, the back passivation layer is arranged between the first metal electrode and the N-type polycrystalline silicon at intervals, and the second metal electrode penetrates through the back passivation layer to be in ohmic contact with the N-type polycrystalline silicon.
2. The monocrystalline silicon solar cell as claimed in claim 1, wherein N-type polysilicon is disposed on the back of the tunnel oxide layer, and the tunnel oxide layer and the N-type polysilicon are connected to form a passivation contact structure.
3. The high efficiency crystalline silicon solar cell of claim 2, wherein the back side of the N-type polycrystalline silicon is provided with a back passivation layer, and the back passivation layer can be silicon nitride or a stack of silicon oxide and silicon nitride.
4. The high efficiency crystalline silicon solar cell as claimed in claim 1, wherein the front surface of the tunneling oxide layer is provided with a P-type silicon substrate.
5. The high efficiency crystalline silicon solar cell of claim 1, wherein the front side of the P-type silicon substrate is provided with a front passivation layer, and the front passivation layer is a laminated layer of aluminum oxide and silicon nitride.
6. The high efficiency crystalline silicon solar cell of any of claims 1-5, wherein the first metal electrode is aluminum, the second metal electrode 8 is silver, the P-type silicon is a local back surface field, and the P-type silicon is aluminum doped silicon.
7. A preparation method of a high-efficiency crystalline silicon solar cell is characterized by comprising the following steps:
1) cleaning the P-type silicon substrate, and polishing the back of the P-type silicon substrate;
2) preparing a tunneling oxide layer and N-type polycrystalline silicon on the back surface of the P-type silicon substrate to form a passivation contact structure, and forming phosphorosilicate glass on the N-type polycrystalline silicon;
3) removing the winding plating on the front surface of the P-type silicon substrate, and texturing on the front surface of the P-type silicon substrate;
4) removing phosphorosilicate glass on the back surface of the P-type silicon substrate, performing laser grooving on the back surface of the P-type silicon substrate, and removing N-type polycrystalline silicon and a tunneling oxide layer in a laser grooving area;
5) depositing a front passivation layer and a back passivation layer on the front surface and the back surface of the P-type silicon substrate respectively;
6) laser grooving is carried out on the back of the P-type silicon substrate, the grooving graph and the grooving graph in the step 4) are grid lines, the grooving width is smaller than that in the step 4), and a back passivation layer is removed in a laser grooving area;
7) and printing aluminum paste and silver paste on the back of the P-type silicon substrate, aligning the aluminum paste printing to the laser grooving area, and sintering to complete metallization.
8. The method for preparing an efficient crystalline silicon solar cell according to claim 7, wherein in the step 2), a tunneling oxide layer is grown on the back surface of the P-type silicon substrate through thermal oxidation, intrinsic polycrystalline silicon is deposited on the tunneling oxide layer through a low-pressure chemical vapor deposition method, phosphorus is doped into the intrinsic polycrystalline silicon through a diffusion process, a passivation contact structure is formed on the back surface of the P-type silicon substrate, the passivation contact structure is a stack of the tunneling oxide layer and the N-type polycrystalline silicon, and phosphorosilicate glass formed through diffusion is arranged on the N-type polycrystalline silicon.
9. The method for preparing the high-efficiency crystalline silicon solar cell according to claim 7, characterized in that in the step 3), the phosphorosilicate glass, the N-type polycrystalline silicon and the tunneling oxide layer which are plated in a winding mode are removed from the front surface of the P-type silicon substrate through hydrofluoric acid and nitric acid, the phosphorosilicate glass on the back surface of the P-type silicon substrate is reserved, the front surface of the P-type silicon substrate is subjected to texturing through an alkali solution, a textured structure is formed on the front surface of the P-type silicon substrate, and the N-type polycrystalline silicon on the back surface of the P-type silicon substrate is reserved through the phosphorosilicate glass.
10. The method for preparing the high-efficiency crystalline silicon solar cell according to claim 7, wherein aluminum paste and silver paste are printed on the back of the P-type silicon substrate in the step 7), patterns of the printed aluminum paste and the printed silver paste are grid lines, the aluminum grid lines are aligned with the laser grooving area in the step 6), after sintering, aluminum-doped P-type silicon is formed at the interface of the aluminum paste and the P-type silicon substrate, the silver paste is burnt through a back passivation layer, and a second metal electrode of the silver paste is in contact with back N-type polycrystalline silicon.
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