CN110634762A - ICPMS test method and ICPMS scanning platform - Google Patents

ICPMS test method and ICPMS scanning platform Download PDF

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Publication number
CN110634762A
CN110634762A CN201910908564.8A CN201910908564A CN110634762A CN 110634762 A CN110634762 A CN 110634762A CN 201910908564 A CN201910908564 A CN 201910908564A CN 110634762 A CN110634762 A CN 110634762A
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silicon wafer
vpd
icpms
base
liquid drops
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吕亚冰
岳思宇
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Shanghai Huali Integrated Circuit Manufacturing Co Ltd
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Shanghai Huali Integrated Circuit Manufacturing Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
    • G01N27/626—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode using heat to ionise a gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Abstract

The application discloses an ICPMS testing method and an ICPMS scanning platform, wherein the method comprises the following steps: etching the silicon wafer; fixing the etched silicon wafer on an ICPMS scanning platform; enabling the VPD liquid drops to roll on the surface of the silicon wafer, collecting metal components on the surface of the silicon wafer, and reducing the residue of the VPD liquid drops on the surface of the silicon wafer by inclining the silicon wafer and utilizing the gravity of the VPD liquid drops; and carrying out spectral analysis after the VPD liquid drops are atomized, and calculating to obtain the content of the metal components in the VPD liquid drops. According to the ICPMS testing method, the VPD liquid drops roll on the surface of the silicon wafer to collect metal components on the surface of the silicon wafer in the ICPMS testing process, the VPD liquid drops are inclined to the silicon wafer, the residue of the VPD liquid drops on the surface of the silicon wafer is reduced by means of the gravity of the VPD liquid drops, and the accuracy and the stability of a testing result of the ICPMS testing are improved.

Description

ICPMS test method and ICPMS scanning platform
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to an ICPMS testing method and an ICPMS scanning platform in semiconductor manufacturing.
Background
At present, the semiconductor manufacturing industry is gradually moving to higher operation speed and smaller device size, and as the size of semiconductor devices is continuously reduced, the density of elements in a chip is also continuously increased. However, the problem of element contamination in the semiconductor manufacturing process can cause defects of semiconductor devices, and as a raw material in the semiconductor manufacturing process, the surface metal component of the silicon wafer directly affects the yield of device processing. In view of this, in the current semiconductor manufacturing process, the metal component on the surface of the silicon wafer is usually detected by using Inductively Coupled Plasma Mass Spectrometry (ICPMS) test.
In the related art, the ICPMS test is mainly divided into three steps: s1, etching the surface film of the silicon wafer to enable the metal components in the film to be dissociated on the surface of the silicon wafer; s2, collecting metal components on the surface of the silicon wafer by rolling the droplets of the absorbed chemical Vapor decomposition (VPD) liquid on the surface of the silicon wafer on a scanning (Pad scan) platform of the ICPMS equipment through a scanning tube; s3, the VPD droplets containing the metal components were atomized and subjected to spectral analysis, and the content of each metal component in the VPD droplets was calculated.
However, in step S2 of the ICPMS test method proposed in the related art, because the surface of the silicon wafer has a certain degree of hydrophilicity, the VPD droplets form a tail and a residue on the surface of the silicon wafer when rolling, and the VPD droplets are incompletely collected, thereby resulting in a poor accuracy and stability of the result of the ICPMS test to a certain extent.
Disclosure of Invention
The application provides an ICPMS testing method and an ICPMS scanning platform, and can solve the problem that the ICPMS testing method provided in the related technology is poor in accuracy and stability of testing results.
In one aspect, an embodiment of the present application provides an ICPMS testing method, including:
etching the silicon wafer;
fixing the etched silicon wafer on an ICPMS scanning platform;
rolling VPD liquid drops on the surface of the silicon wafer, collecting metal components on the surface of the silicon wafer, and reducing the residue of the VPD liquid drops on the surface of the silicon wafer by inclining the silicon wafer and utilizing the gravity of the VPD liquid drops;
and carrying out spectral analysis after the VPD liquid drops are atomized, and calculating to obtain the content of the metal components in the VPD liquid drops.
Optionally, the rolling the VPD liquid drop on the surface of the silicon wafer to collect the metal components on the surface of the silicon wafer includes:
dropping the VPD liquid drop at the center of the silicon wafer;
adsorbing the VPD droplets through a scanning tube;
raising a base of the ICPMS scanning platform, and inclining the silicon wafer;
making the silicon chip and the scanning tube move relatively, and collecting metal components on the surface of the silicon chip;
and descending the base of the ICPMS scanning platform to enable the silicon wafer to return to the horizontal state.
Optionally, the making the silicon wafer and the scanning tube move relatively includes:
and relatively moving the silicon wafer and the scanning tube, so that the VPD liquid drops roll on the silicon wafer from the center of the silicon wafer to the edge of the silicon wafer in a spiral motion track.
Optionally, the making the silicon wafer and the scanning tube move relatively includes:
enabling the silicon wafer to do clockwise circular motion around the center of the silicon wafer, and enabling the scanning tube to do anticlockwise circular motion around the rotating shaft of the scanning tube; alternatively, the first and second electrodes may be,
and enabling the silicon wafer to do anticlockwise circular motion around the circle center of the silicon wafer, and enabling the scanning tube to do clockwise circular motion around the rotating shaft of the scanning tube.
Optionally, the raising the base of the ICPMS scanning platform and tilting the silicon wafer include:
and lifting the base through a stepping drive motor arranged below the base, and inclining the silicon wafer.
Optionally, before the etching the silicon wafer, the method further includes:
respectively dripping at least one test VPD liquid drop at the center of a test silicon wafer;
respectively enabling each VPD liquid drop to roll on the surface of the test silicon wafer, wherein the inclination angle of the test silicon wafer where each VPD liquid drop is located is different;
and determining the inclination angle of the silicon wafer according to the residue of each test VPD liquid drop on the test silicon wafer.
Optionally, the etching the silicon wafer includes:
and etching the silicon wafer by hydrogen fluoride vapor.
In another aspect, the present application provides an ICPMS scanning platform comprising:
a base;
a stepper drive motor disposed below the base;
the connecting structure is arranged between the base and the stepping driving motor and used for driving the connecting structure through the stepping driving motor in an ICPMS test, and the connecting structure drives the base to enable the base to incline;
the scanning tube is arranged on one side of the base.
Optionally, the connecting structure includes a first hinge structure, a second hinge structure, a shaft sleeve, a lead screw and a driving device base;
one end of the first hinge structure is fixedly connected with the shaft sleeve, and the other end of the first hinge structure is fixedly connected with the first edge of the base;
the shaft sleeve is in threaded connection with the screw rod, a coupler of the stepping drive motor is in threaded connection with the screw rod, and the stepping drive motor is fixedly connected with the drive device base;
one end of the second hinge structure is fixedly connected with the second edge of the base, and the other end of the second hinge structure is fixedly connected with the driving device base.
The technical scheme at least comprises the following advantages:
in the ICPMS test process, when the VPD liquid drops roll on the surface of the silicon wafer to collect metal components on the surface of the silicon wafer, the VPD liquid drops are inclined to reduce the residue of the VPD liquid drops on the surface of the silicon wafer by utilizing the gravity of the VPD liquid drops, and the accuracy and the stability of a test result of the ICPMS test are improved.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a flow chart of an ICPMS testing method provided by an exemplary embodiment of the present application;
FIG. 2 is a schematic diagram of the force applied to contact the VPD droplet with the wafer in a horizontal state;
FIG. 3 is a force diagram of a VPD droplet in contact with a silicon wafer in an inclined state;
FIGS. 4-9 are schematic illustrations of surface metals of a VPD droplet collection silicon wafer provided by an exemplary embodiment of the present application;
FIG. 10 is a graph of the residual effect of a VPD droplet collection method of surface metal of a silicon wafer according to an exemplary embodiment of the present application;
FIG. 11 is a graph showing the residual effect of a related art VPD droplet collection method of collecting a surface metal of a silicon wafer;
FIG. 12 is a schematic diagram of an ICPMS test platform provided by an exemplary embodiment of the present application.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Among the correlation technique, in the ICPMS test, when rolling the metal component who collects the section of jurisdiction surface on the silicon chip surface through the scanning tube absorption VPD liquid drop, scanning platform is the horizontality, because the influence of the microcosmic roughness on silicon chip surface, simultaneously, the VPD liquid drop is hydrophobic with the surface of silicon chip, but still there is hydrophilic phenomenon, consequently when the VPD liquid drop rolls, can produce the phenomenon of trailing and remaining on the silicon chip surface, lead to VPD liquid drop collection incomplete, thereby lead to the accuracy and the poor stability of the result of ICPMS test to a certain extent.
Example 1:
referring to fig. 1, a flowchart of an ICPMS testing method provided in an exemplary embodiment of the present application is shown, and as shown in fig. 1, the method includes:
step 101, etching a silicon wafer.
And 102, fixing the etched silicon wafer on an ICPMS scanning platform.
And 103, rolling the VPD liquid drops on the surface of the silicon wafer, collecting metal components on the surface of the silicon wafer, and reducing the residue of the VPD liquid drops on the surface of the silicon wafer by inclining the silicon wafer and utilizing the gravity of the VPD liquid drops.
And 104, atomizing the VPD liquid drops, performing spectral analysis, and calculating to obtain the content of the metal components in the VPD liquid drops.
In summary, in the ICPMS test process, when the VPD liquid drops roll on the surface of the silicon wafer to collect metal components on the surface of the silicon wafer, the VPD liquid drops are tilted to reduce the residue of the VPD liquid drops on the surface of the silicon wafer by using the gravity of the VPD liquid drops, so that the accuracy and stability of the test result of the ICPMS test are improved.
Referring to fig. 2 and 3, VPD liquid drops are in a three-phase contact state on the surface of a silicon wafer, the surface hydrophilicity or hydrophobicity is related to the surface tension of each phase, and the resistance of the liquid drops in rolling is closely related to the surface tension, according to the young's equation:
cosθ＝(ΓSV-ΓSL)ΓLV
wherein, gamma isSVIs the surface tension coefficient of the solid-gas interface, gammaSLIs the surface tension coefficient, gamma, of the solid-liquid interfaceLVIs the surface tension coefficient of the gas-liquid interface.
The resistance of the VPD liquid drop when rolling on the surface of the silicon wafer is represented by theta (theta is 180 degrees to a rolling angle) (it needs to be noted that the resistance of the VPD liquid drop when rolling on the surface of the silicon wafer is related to other factors such as roughness, wettability and interface free energy of the surface of the silicon wafer).
Example 2:
referring to example 1, example 2 differs from example 1 in that: in step 103, "rolling the VPD droplet on the surface of the silicon wafer and collecting the metal components on the surface of the silicon wafer" includes: dropping VPD liquid drops on the center of the silicon wafer; adsorbing VPD liquid drops through a scanning tube; lifting a base of the ICPMS scanning platform, and inclining the silicon wafer; making the silicon chip and the scanning tube move relatively, and collecting the metal components on the surface of the silicon chip; and (5) descending a base of the ICPMS scanning platform to enable the silicon wafer to be restored to be horizontal.
Optionally, in this embodiment, the effect of "making the silicon wafer and the scanning tube move relatively" is: and enabling the VPD liquid drop to roll on the silicon wafer from the center of the silicon wafer to the edge of the silicon wafer in a spiral motion track. Optionally, the method may be implemented by one of the following ways: (1) the silicon chip makes clockwise circular motion around the center of the silicon chip, and the scanning tube makes anticlockwise circular motion around the rotating shaft of the scanning tube; (2) the silicon chip makes anticlockwise circular motion around the center of the silicon chip, and the scanning tube makes clockwise circular motion around the rotating shaft of the scanning tube.
Illustratively, referring to FIG. 4, a silicon wafer 301 is mounted on a pedestal 310 of an ICPMS scanning platform, and a VPD droplet 302 is dripped on the center of the silicon wafer 301; referring to fig. 5, VPD droplet 302 is adsorbed by scanning tube 320; referring to fig. 6, the susceptor 310 is raised to make the susceptor 310 in a tilted state to tilt the silicon wafer 301; referring to fig. 7, the base 310 drives the silicon wafer 301 to move clockwise around the center of the circle, and the scanning tube 320 drives the VPD droplet 302 to move counterclockwise around the rotation axis of the scanning tube 320, so that the VPD droplet 302 rolls on the silicon wafer 301 from the center of the silicon wafer 301 to the edge of the silicon wafer 301 in a spiral motion track; referring to fig. 8 and 9, when the VPD droplet 302 rolls down to the edge of the silicon wafer 301, the susceptor 310 is dropped down, so that the silicon wafer 301 is restored to a horizontal state.
In this embodiment, when the VPD liquid drops roll, the silicon wafer makes a counterclockwise circular motion, the scanning tube adsorbs the VPD liquid drops and makes a clockwise rotation around the rotation axis, the VPD liquid drops move spirally from inside to outside relative to the silicon wafer, and the inclination angle makes the gravity direction of the VPD liquid drops opposite to the direction in which the silicon wafer drags the liquid drops, so that the liquid drops gravity can be used to offset part of the resistance, which can be referred to fig. 2 and 3 specifically.
Example 3:
referring to example 2, example 3 differs from example 2 in that: and lifting the base through a stepping drive motor arranged below the base to incline the silicon wafer.
The residual result of VPD droplets after collecting metal components on the surface of the silicon wafer in the ICPMS test method provided in the embodiment of the present application can refer to fig. 10, and the silicon wafer 301 has no obvious residual VPD droplets, and the residual result of VPD droplets after collecting metal components on the surface of the silicon wafer in the ICPMS test method provided in the related art can refer to fig. 11, and the silicon wafer has obvious tailing and residue.
Example 4:
referring to example 2 and example 3, example 4 differs from the above examples in that: before step 101, further comprising: respectively dripping at least one test VPD liquid drop at the center of a test silicon wafer; respectively enabling each VPD liquid drop to roll on the surface of the test silicon wafer, wherein the inclination angle of the test silicon wafer where each VPD liquid drop is located is different; and determining the inclination angle of the silicon wafer according to the residue of each test VPD liquid drop on the test silicon wafer.
As described above, the preferred tilt angle can be determined through testing. Illustratively, a first VPD test liquid drop is dropped at the center of a test silicon wafer, the inclination angle of a base is alpha 1, and the first VPD test liquid drop rolls on the surface of the test silicon wafer to obtain a residual result; dripping a second VPD test liquid drop at the center of the test silicon wafer, enabling the inclination angle of the base to be alpha 2, and enabling the second VPD test liquid drop to roll on the surface of the test silicon wafer to obtain a residual result; … … dropping the nth VPD test liquid drop in the center of the test silicon wafer, making the inclination angle of the base alpha n, and rolling the nth test VPD liquid drop on the surface of the test silicon wafer to obtain a residual result, wherein n is a positive integer and is not less than 2. And selecting the best result from the residual results, and taking the inclination angle corresponding to the result as the inclination angle of the silicon wafer. Alternatively, the test liquid drop is rolled on the surface of the test silicon wafer in the manner described in example 2.
In the above embodiments, the silicon wafer may be etched by Hydrogen Fluoride (HF) vapor.
Example 5:
referring to fig. 12, the present application further provides an ICPMS scanning platform, which can be used to perform the step of collecting the surface metal component of the silicon wafer in the ICPMS testing method provided in the above embodiment. The scanning platform comprises:
a base 310; a step driving motor 330, the step driving motor 330 being disposed below the base 310; a connection structure disposed between the base 310 and the stepping motor 330, for driving the connection structure by the stepping motor 330 in an ICPMS test, the connection structure driving the base 310 to tilt the base 310; a scanning tube 320, the scanning tube 320 being disposed at one side of the base 310.
Optionally, in this embodiment, the connecting structure includes a first hinge structure 341, a second hinge structure 342, a bushing 343, a lead screw 344, and a driving device base 345. Wherein:
one end of the first hinge structure 341 is fixedly connected to the shaft sleeve 343, and the other end of the first hinge structure 341 is fixedly connected to the first edge of the base 310; the shaft sleeve 343 is in threaded connection with the lead screw 344, the coupler 331 of the stepping drive motor 330 is in threaded connection with the lead screw 344, and the stepping drive motor 330 is fixedly connected with the drive device base 345; one end of the second hinge structure 342 is fixedly connected to the second edge of the base 310, and the other end of the second hinge structure 342 is fixedly connected to the driving device base 345.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.

Claims (9)

1. An ICPMS testing method, comprising:
etching the silicon wafer;
fixing the etched silicon wafer on an ICPMS scanning platform;
rolling VPD liquid drops on the surface of the silicon wafer, collecting metal components on the surface of the silicon wafer, and reducing the residue of the VPD liquid drops on the surface of the silicon wafer by inclining the silicon wafer and utilizing the gravity of the VPD liquid drops;
and carrying out spectral analysis after the VPD liquid drops are atomized, and calculating to obtain the content of the metal components in the VPD liquid drops.
2. The method of claim 1, wherein the rolling of the VPD droplet on the silicon wafer surface to collect the metal components on the silicon wafer surface comprises:
dropping the VPD liquid drop at the center of the silicon wafer;
adsorbing the VPD droplets through a scanning tube;
raising a base of the ICPMS scanning platform, and inclining the silicon wafer;
making the silicon chip and the scanning tube move relatively, and collecting metal components on the surface of the silicon chip;
and descending the base of the ICPMS scanning platform to enable the silicon wafer to return to the horizontal state.
3. The method of claim 2, wherein said moving said silicon wafer and said scan tube relative to each other comprises:
and relatively moving the silicon wafer and the scanning tube, so that the VPD liquid drops roll on the silicon wafer from the center of the silicon wafer to the edge of the silicon wafer in a spiral motion track.
4. The method of claim 3, wherein the moving the silicon wafer and the scan tube relative to each other comprises:
enabling the silicon wafer to do clockwise circular motion around the center of the silicon wafer, and enabling the scanning tube to do anticlockwise circular motion around the rotating shaft of the scanning tube; alternatively, the first and second electrodes may be,
and enabling the silicon wafer to do anticlockwise circular motion around the circle center of the silicon wafer, and enabling the scanning tube to do clockwise circular motion around the rotating shaft of the scanning tube.
5. The method of claim 4, wherein said raising the pedestal of the ICPMS scanning platform and tilting the silicon wafer comprises:
and lifting the base through a stepping drive motor arranged below the base, and inclining the silicon wafer.
6. The method of claim 5, wherein prior to etching the silicon wafer, further comprising:
respectively dripping at least one test VPD liquid drop at the center of a test silicon wafer;
respectively enabling each VPD liquid drop to roll on the surface of the test silicon wafer, wherein the inclination angle of the test silicon wafer where each VPD liquid drop is located is different;
and determining the inclination angle of the silicon wafer according to the residue of each test VPD liquid drop on the test silicon wafer.
7. The method of any one of claims 1 to 6, wherein the etching the silicon wafer comprises:
and etching the silicon wafer by hydrogen fluoride vapor.
8. An ICPMS scanning platform, comprising:
a base;
a stepper drive motor disposed below the base;
the connecting structure is arranged between the base and the stepping driving motor and used for driving the connecting structure through the stepping driving motor in an ICPMS test, and the connecting structure drives the base to enable the base to incline;
the scanning tube is arranged on one side of the base.
9. An ICPMS scanning platform according to claim 7, wherein said attachment structure comprises a first hinge structure, a second hinge structure, a bushing, a lead screw, and a drive mechanism base;
one end of the first hinge structure is fixedly connected with the shaft sleeve, and the other end of the first hinge structure is fixedly connected with the first edge of the base;
the shaft sleeve is in threaded connection with the screw rod, a coupler of the stepping drive motor is in threaded connection with the screw rod, and the stepping drive motor is fixedly connected with the drive device base;
one end of the second hinge structure is fixedly connected with the second edge of the base, and the other end of the second hinge structure is fixedly connected with the driving device base.
CN201910908564.8A 2019-09-25 2019-09-25 ICPMS test method and ICPMS scanning platform Pending CN110634762A (en)

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EP4166922A1 (en) * 2021-10-14 2023-04-19 PVA TePla AG High precision vpd-dc scan

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CN104332425A (en) * 2014-11-18 2015-02-04 天津中环领先材料技术有限公司 Silicon chip surface metal ion testing device
CN108871900A (en) * 2018-07-13 2018-11-23 上海华力微电子有限公司 The collection device of hydrophily silicon chip surface drop in VPD board

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Publication number Priority date Publication date Assignee Title
US6182675B1 (en) * 1997-02-28 2001-02-06 Mitsubishi Denki Kabushiki Kaisha Apparatus for recovering impurities from a silicon wafer
DE19825226A1 (en) * 1998-01-13 1999-07-15 Fraunhofer Ges Forschung Silicon wafer surface testing chamber e.g. for detecting heavy metal contaminants by the vapor phase decomposition
CN102565182A (en) * 2011-12-16 2012-07-11 天津中环领先材料技术有限公司 Method for testing content of metal ions on surface of 8-inch silicon polished wafer for insulated gate bipolar transistor (IGBT)
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Publication number Priority date Publication date Assignee Title
EP4166922A1 (en) * 2021-10-14 2023-04-19 PVA TePla AG High precision vpd-dc scan
TWI832365B (en) * 2021-10-14 2024-02-11 德商ＰＶＡ ＴｅＰｌａ有限責任公司 High precision vpd-dc scan

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