JP4204434B2 - Method and apparatus for recovering object to be measured around wafer - Google Patents

Method and apparatus for recovering object to be measured around wafer Download PDF

Info

Publication number
JP4204434B2
JP4204434B2 JP2003342830A JP2003342830A JP4204434B2 JP 4204434 B2 JP4204434 B2 JP 4204434B2 JP 2003342830 A JP2003342830 A JP 2003342830A JP 2003342830 A JP2003342830 A JP 2003342830A JP 4204434 B2 JP4204434 B2 JP 4204434B2
Authority
JP
Japan
Prior art keywords
wafer
recovery
liquid
measured
peripheral portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003342830A
Other languages
Japanese (ja)
Other versions
JP2005109292A (en
Inventor
基行 山上
Original Assignee
理学電機工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 理学電機工業株式会社 filed Critical 理学電機工業株式会社
Priority to JP2003342830A priority Critical patent/JP4204434B2/en
Publication of JP2005109292A publication Critical patent/JP2005109292A/en
Application granted granted Critical
Publication of JP4204434B2 publication Critical patent/JP4204434B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

本発明は、ウェーハ(基板)周辺部、特にウェーハの端面(ベベル)に存在する微量の金属不純物である被測定物を回収する方法および装置に関するものである。   The present invention relates to a method and an apparatus for recovering an object to be measured which is a trace amount of metal impurities present on a peripheral portion of a wafer (substrate), particularly on an end face (bevel) of the wafer.

従来から、シリコンウェーハ表面などに付着した微量の金属不純物、例えばアルミニウム、鉄、ニッケル、亜鉛など(被測定物)を分析する場合に、その前処理装置として例えば気相分解(VPD;Vapor Phase Decomposition)装置を用いた回収装置が知られている。まず、気相分解装置により、ウェーハ表面にフッ化水素のような反応性ガスが導入されて、ウェーハ表面の酸化膜が溶解されるとともに被測定物が溶解され、その後乾燥されてウェーハ表面に保持される。そして、ウェーハ表面に滴下したフッ化水素酸溶液のような回収液の液滴を保持具で保持しながらウェーハ表面上で水平移動させて、ウェーハ表面に保持された被測定物が回収される。このウェーハ表面を回収する回収装置は、ウェーハを横置きにした横置き型である。   Conventionally, when analyzing a small amount of metal impurities adhering to the surface of a silicon wafer, such as aluminum, iron, nickel, zinc (object to be measured), as a pretreatment device, for example, vapor phase decomposition (VPD: Vapor Phase Decomposition) A recovery apparatus using the apparatus is known. First, a reactive gas such as hydrogen fluoride is introduced to the wafer surface by the vapor phase decomposition apparatus, the oxide film on the wafer surface is dissolved and the object to be measured is dissolved, and then dried and held on the wafer surface. Is done. Then, the liquid to be measured is held on the wafer surface by horizontally moving it on the wafer surface while holding a liquid drop such as a hydrofluoric acid solution dropped on the wafer surface with a holder. The collecting device for collecting the wafer surface is a horizontal type in which the wafer is horizontally set.

一方、ウェーハ周辺部、つまり、ウェーハの端面(ベベル)と端面近傍の表面および裏面を含むエッジ部分は、ウェーハのハンドリングに際して、搬送装置などにより汚染されやすく、ウェーハ表面とは別個に分析する必要性が高くなっている。   On the other hand, the peripheral part of the wafer, that is, the edge part including the end face (bevel) of the wafer and the front and back surfaces near the end face, is easily contaminated by the transfer device when handling the wafer, and needs to be analyzed separately from the wafer surface. Is high.

このウェーハ周辺部の被測定物を回収する装置として、ウェーハを回転体に垂直に保持し、垂直に回転させながら、ウェーハ周辺部の全周にわたって浸漬容器内の薬液に浸漬させて被測定物を回収する回収装置(方法)が知られている(例えば、特許文献1)。浸漬容器内の薬液にウェーハ周辺部の全周を浸漬させるために、ウェーハを縦置きにして回転させる縦置き型の回収装置(方法)としたものである。
特開平11−204604号公報
As a device for collecting the object to be measured at the periphery of the wafer, hold the wafer perpendicular to the rotating body, and while rotating vertically, immerse the object to be measured in the chemical solution in the immersion container over the entire periphery of the wafer periphery. A recovery device (method) for recovery is known (for example, Patent Document 1). In order to immerse the entire circumference of the periphery of the wafer in the chemical solution in the immersion container, the wafer is placed in a vertical orientation and is a vertical collection device (method) that rotates.
JP-A-11-204604

しかし、上記縦置き型の回収装置では、以下の問題がある。すなわち、(a)薬液上部にウェーハチャック機構、回転機構などの機械部が存在しており、それが薬液を汚染させる原因となる。(b)構造およびハンドリングが複雑となり、必要とされる薬液も多くなる。(c)ウェーハ表面と周辺部の両方を回収する場合に、横置き型のウェーハ表面の回収装置と、縦置き型のウェーハ周辺部の回収装置を併置すると、装置が大型化する。(d)縦置き型ではウェーハを垂直に回転させるので、ウェーハ落下の危険性がある。   However, there are the following problems in the above-mentioned vertical collection device. That is, (a) mechanical parts such as a wafer chuck mechanism and a rotation mechanism are present on the upper part of the chemical solution, which causes contamination of the chemical solution. (B) The structure and handling are complicated, and more chemicals are required. (C) When collecting both the wafer surface and the peripheral portion, if the horizontal-type wafer surface recovery device and the vertical-type wafer peripheral portion recovery device are placed side by side, the size of the device increases. (D) In the vertical type, there is a risk of dropping the wafer because the wafer is rotated vertically.

本発明は、前記の問題点を解決して、構造が簡単で、容易かつ安定した回収が可能なウェーハ周辺部の被測定物の回収方法および装置を提供することを目的としている。   SUMMARY OF THE INVENTION An object of the present invention is to provide a method and apparatus for recovering an object to be measured around a wafer, which solves the above problems and has a simple structure and can be recovered easily and stably.

前記目的を達成するために、本発明に係るウェーハ周辺部の被測定物の回収方法および装置は、ウェーハがウェーハ台により水平に回転可能に保持され、滴下した回収液の液滴が回収液保持台上で保持されて、ウェーハを水平に回転させながら、前記回収液保持台上の液滴にウェーハ周辺部を接触させて、ウェーハ周辺部に存在する被測定物を回収するものである。     In order to achieve the above-described object, the method and apparatus for recovering an object to be measured at the periphery of a wafer according to the present invention holds a wafer so that the wafer can be rotated horizontally by a wafer stage, and a droplet of the recovered recovery liquid holds the recovery liquid. While being held on the table and rotating the wafer horizontally, the peripheral part of the wafer is brought into contact with the droplets on the recovery liquid holding table, and the object to be measured existing on the peripheral part of the wafer is recovered.

この構成によれば、ウェーハを水平に回転させながら、回収液保持台上の液滴にウェーハ周辺部を接触させて、ウェーハ周辺部に存在する被測定物を回収するので、従来のように、ウェーハを縦置きにして浸漬容器内の薬液にウェーハ周辺部を浸漬させるのではなく、ウェーハを横置きにして回収液保持台上の液滴にウェーハ周辺部を接触させることから、従来のように、薬液の汚染や、構造およびハンドリングの複雑化の問題がなく、構造が簡単で、容易かつ安定したウェーハ周辺部の回収が可能となる。   According to this configuration, while rotating the wafer horizontally, the wafer peripheral part is brought into contact with the droplets on the recovery liquid holding table, and the measurement object existing in the wafer peripheral part is recovered. Instead of placing the wafer vertically and immersing the periphery of the wafer in the chemical solution in the immersion vessel, the wafer is placed horizontally and the periphery of the wafer is brought into contact with the liquid droplets on the recovery liquid holding table. There is no problem of chemical contamination or complicated structure and handling, the structure is simple, and the wafer periphery can be recovered easily and stably.

好ましくは、前記回収液の液滴と接触するウェーハ周辺部の接触面積を変化させるように、回収液保持台をウェーハ台の方向へ移動させる。したがって、ウェーハの端面のみに存在する被測定物を分析する場合と、ウェーハの端面と端面近傍の表面および裏面に存在する被測定物を分析する場合の両方に対応することができる。また、好ましくは、この被測定物が金属不純物である。   Preferably, the recovery liquid holding base is moved in the direction of the wafer base so as to change the contact area of the peripheral portion of the wafer that contacts the droplets of the recovery liquid. Therefore, it is possible to cope with both the case where the object to be measured existing only on the end face of the wafer is analyzed and the case where the object to be measured existing on the front and back surfaces near the end face and the end face is analyzed. Preferably, the object to be measured is a metal impurity.

好ましくは、前記回収液の液滴を前記回収液保持台との間で挟む保持具により保持する。したがって、回収液の液滴がウェーハ周辺部の回転力を受けても、より確実に動かないように保持できる。   Preferably, the droplet of the recovered liquid is held by a holder that is sandwiched between the recovered liquid holding table and the recovered liquid holding table. Therefore, even if the droplet of the recovered liquid receives the rotational force at the periphery of the wafer, it can be held so as not to move more reliably.

好ましくは、ウェーハ表面に滴下した回収液の液滴をウェーハ表面との間で挟む保持具で保持しながらウェーハ表面上で移動させて、ウェーハ表面に存在する被測定物を回収する。したがって、ウェーハ表面と周辺部の両方を回収する場合に、ウェーハ周辺部の回収装置がウェーハ表面の回収装置と同様に横置き型となるので、装置が大型化することなく従来のウェーハ表面の回収装置と共用できる。   Preferably, the measurement object existing on the wafer surface is recovered by moving the droplet of the recovery liquid dropped on the wafer surface on the wafer surface while being held by a holder sandwiched between the wafer surface. Therefore, when collecting both the wafer surface and the peripheral part, the wafer peripheral part recovery device is horizontally placed like the wafer surface recovery apparatus, so that the conventional wafer surface recovery can be performed without increasing the size of the apparatus. Can be shared with the device.

本発明に係る分析方法(分析システム)は、前記回収方法(装置)と、回収された被測定物を分析する、好ましくは蛍光X線分析法(装置)のような分析方法(装置)とを備えている。   The analysis method (analysis system) according to the present invention comprises the recovery method (apparatus) and an analysis method (apparatus) such as a fluorescent X-ray analysis method (apparatus) for analyzing the recovered object to be measured. I have.

以下、本発明の実施形態を図面に基づいて説明する。図1は、本発明の一実施形態に係るウェーハ周辺部1aの被測定物の回収装置を示す構成図である。被測定物は例えばアルミニウム、鉄、ニッケル、亜鉛などの金属不純物である。本回収装置は、ウェーハ1を水平に保持するウェーハ台2、ウェーハ台2を水平に回転させる回転機構12、滴下した回収液の液滴3を保持する回収液保持台4、および移動機構14を備えている。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram showing a device for collecting an object to be measured at a wafer peripheral portion 1a according to an embodiment of the present invention. The object to be measured is a metal impurity such as aluminum, iron, nickel, or zinc. The recovery apparatus includes a wafer table 2 that holds the wafer 1 horizontally, a rotation mechanism 12 that rotates the wafer table 2 horizontally, a recovery liquid holding table 4 that holds droplets 3 of the dropped recovery liquid, and a moving mechanism 14. I have.

回収液は例えばフッ化水素酸溶液であり、例えば100μリットル(0.1cc)の回収液が回収液保持台4上に滴下される。回収液保持台4は、例えばPTFE(ポリ四フッ化エチレン、登録商標テフロン)のような疎水性材料からなり、回収液が滴下されると回収液保持台4上でその疎水性から液滴(液体粒子)3の状態となる。   The recovered liquid is, for example, a hydrofluoric acid solution. For example, 100 μl (0.1 cc) of recovered liquid is dropped on the recovered liquid holding table 4. The recovery liquid holding table 4 is made of a hydrophobic material such as PTFE (polytetrafluoroethylene, registered trademark Teflon). When the recovery liquid is dropped, the recovery liquid holding base 4 drops droplets ( Liquid particles 3).

前記移動機構14は、前記回収液の液滴3に接触するウェーハ周辺部1aの接触面積を変化させるように、例えば、回収液保持台4を、平面視で回収液保持台4の中心とウェーハ台2の中心を結ぶ直線上で、ウェーハ台2の方向へ移動させるものである。この移動機構14により、ウェーハ周辺部1aのうち、ウェーハ1の端面のみに存在する被測定物を分析する場合と、ウェーハ1の端面と端面近傍の表面および裏面に存在する被測定物を分析する場合(破線)の両方に対応することができる。なお、特に移動機構14を設けることなく回収液保持台4を手動で移動させるようにしてもよい。   For example, the moving mechanism 14 is configured so that the recovery liquid holding table 4 and the center of the recovery liquid holding table 4 and the wafer are viewed in a plan view so as to change the contact area of the wafer peripheral portion 1a that contacts the droplet 3 of the recovery liquid. It is moved in the direction of the wafer table 2 on a straight line connecting the centers of the tables 2. This moving mechanism 14 analyzes the object to be measured existing only on the end face of the wafer 1 in the wafer peripheral portion 1a, and the object to be measured present on the front and back surfaces of the wafer 1 in the vicinity of the end face. Both cases (dashed lines) can be handled. In addition, you may make it move the collection | recovery liquid holding stand 4 manually without providing the moving mechanism 14 especially.

本回収装置は、ウェーハ1がウェーハ台2により水平に回転可能に保持され、滴下した回収液の液滴3が回収液保持台4上で保持されて、ウェーハ台2の回転機構12によりウェーハ1を水平に回転させながら、回収液保持台4の移動機構14により回収液の液滴3にウェーハ周辺部1aを接触させて、ウェーハ周辺部1aに存在する被測定物を回収するものである。   In this recovery apparatus, the wafer 1 is held by the wafer stage 2 so as to be horizontally rotatable, the dropped recovery liquid droplet 3 is held on the recovery liquid holding stage 4, and the wafer 1 is rotated by the rotating mechanism 12 of the wafer stage 2. The wafer peripheral portion 1a is brought into contact with the liquid droplet 3 of the recovered liquid by the moving mechanism 14 of the recovered liquid holding base 4 while the apparatus is horizontally rotated, and the object to be measured existing in the wafer peripheral portion 1a is recovered.

本発明にかかる分析システムは、図1の回収装置と、回収された被測定物を分析する例えば図4に示す全反射蛍光X線分析装置のような分析装置とを備えている。全反射蛍光X線分析装置は、X線管21からのX線を分光素子22で単色化した1次X線B1を、微小な入射角α(例えば、0.05°〜0.20°程度)で被測定物に入射させ、被測定物から発生した蛍光X線B2の強度を検出器23で検出させる。この検出値に基づいて被測定物の元素分析がなされる。   The analysis system according to the present invention includes the recovery device of FIG. 1 and an analysis device such as a total reflection X-ray fluorescence analysis device shown in FIG. 4 for analyzing the recovered object to be measured. The total reflection fluorescent X-ray analyzer measures the primary X-ray B1 obtained by monochromatizing the X-ray from the X-ray tube 21 with the spectroscopic element 22 at a small incident angle α (for example, about 0.05 ° to 0.20 °). The light is incident on an object, and the intensity of the fluorescent X-ray B2 generated from the object to be measured is detected by the detector 23. Based on the detected value, elemental analysis of the object to be measured is performed.

つぎに、この分析システムの動作について説明する。まず、図1の回収装置において、(1)ウェーハ1をウェーハ台2に水平にセットする。(2)回収液を回収液保持台4に滴下して液滴3を回収液保持台4上に保持する。 (3)回収液保持台4を移動機構14で移動させて、回収液の液滴3にウェーハ周辺部1aを接触させる。(4)ウェーハ台2を回転機構12で回転させて、ウェーハ1を例えば1〜2回転させる。(5) ウェーハ周辺部1aの被測定物が溶解した液滴3を例えばノズルで吸い上げて回収する。こうして、ウェーハ周辺部1aの被測定物が回収される。   Next, the operation of this analysis system will be described. First, in the collection apparatus of FIG. 1, (1) the wafer 1 is set horizontally on the wafer table 2. (2) The recovered liquid is dropped on the recovered liquid holding table 4 to hold the droplet 3 on the recovered liquid holding table 4. (3) The recovered liquid holding table 4 is moved by the moving mechanism 14 to bring the wafer peripheral portion 1a into contact with the recovered liquid droplet 3. (4) The wafer stage 2 is rotated by the rotation mechanism 12, and the wafer 1 is rotated, for example, 1 to 2 times. (5) The droplet 3 in which the object to be measured in the wafer peripheral portion 1a is dissolved is sucked up by, for example, a nozzle and collected. Thus, the object to be measured on the wafer peripheral portion 1a is recovered.

つぎに、(6)被測定物を回収後乾燥させてウェーハ1上に保持する。(7)この被測定物が保持されたウェーハ1を全反射蛍光X線分析装置に搬送して、被測定物を全反射蛍光X線分析する。なお、(6)において、被測定物を新たなウェーハ1上に保持するようにしてもよい。   Next, (6) the object to be measured is collected and then dried and held on the wafer 1. (7) The wafer 1 holding the object to be measured is transferred to a total reflection X-ray fluorescence analyzer, and the object to be measured is subjected to total reflection X-ray fluorescence analysis. In (6), the object to be measured may be held on a new wafer 1.

これにより、本回収装置は、ウェーハ1を水平に回転させながら、回収液保持台4上の液滴3にウェーハ周辺部1aを接触させて、ウェーハ周辺部1aに存在する被測定物を回収するので、従来のように、ウェーハを縦置き型として浸漬容器内の薬液にウェーハ周辺部を浸漬させるのではなく、ウェーハ1を横置き型として回収液保持台4上の液滴にウェーハ周辺部1aを接触させることから、従来の縦置き型のように、薬液の汚染や、構造およびハンドリングの複雑化の問題がなく、構造が簡単で、容易かつ安定したウェーハ周辺部1aの回収が可能となる。   As a result, the present recovery apparatus makes the wafer peripheral portion 1a contact the droplet 3 on the recovery liquid holding stand 4 while rotating the wafer 1 horizontally, and recovers the measurement object existing in the wafer peripheral portion 1a. Therefore, as in the prior art, the wafer periphery is not vertically immersed and the wafer periphery is immersed in the chemical solution in the immersion container. Therefore, unlike the conventional vertical type, there is no problem of chemical contamination or complicated structure and handling, and the structure is simple, and the wafer peripheral portion 1a can be recovered easily and stably. .

なお、図2のように、ウェーハ回転中、液滴3を回収液保持台4との間で挟むように保持する保持具5を設けてもよい。保持具5は例えばアーム7に取り付けられて、水平および上下方向に移動可能となっている。この保持具5は例えばPTFE製のノズルからなり、回収液を滴下するとともに、その先端と回収液保持台4間で液滴3を保持する。したがって、ウェーハ回転中に、回収液の液滴3がウェーハ周辺部1aの回転力を受けても、より確実にそのまま動かないように保持できる。   As shown in FIG. 2, a holder 5 that holds the droplet 3 so as to be sandwiched between the recovered liquid holding base 4 during the rotation of the wafer may be provided. The holder 5 is attached to the arm 7, for example, and can move in the horizontal and vertical directions. The holder 5 is made of, for example, a PTFE nozzle, and drops the recovery liquid and holds the liquid droplet 3 between the tip and the recovery liquid holding stand 4. Therefore, even when the droplet 3 of the recovery liquid receives the rotational force of the wafer peripheral portion 1a during the rotation of the wafer, it can be held so as not to move as it is.

なお、この実施形態では、ウェーハ周辺部1aを回収するのに、直ちに液滴3に接触させて回収させているが、気相分解が必要な場合には、ウェーハ周辺部1aを気相分解した後に液滴3に接触させて回収する。   In this embodiment, in order to recover the wafer peripheral portion 1a, the wafer peripheral portion 1a is immediately brought into contact with the droplet 3 and recovered. However, when vapor phase decomposition is necessary, the wafer peripheral portion 1a is vapor-phase decomposed. Later, it is brought into contact with the droplet 3 and collected.

なお、この分析システムでは、回収された被測定物を全反射蛍光X線分析装置で分析しているが、これに限定されるものではなく、その他の蛍光X線分析装置でもよく、さらに、原子吸光分析装置などを用いてもよい。原子吸光分析装置を用いた場合、回収液を乾燥させることなくそのままで分析される。   In this analysis system, the collected object to be measured is analyzed by a total reflection X-ray fluorescence analyzer. However, the present invention is not limited to this, and other fluorescent X-ray analyzers may be used. An absorption analyzer or the like may be used. When an atomic absorption analyzer is used, the collected liquid is analyzed as it is without being dried.

図3は、他の実施形態に係るウェーハ1の被測定物の回収装置を示す構成図である。前記実施形態の回収装置はウェーハ周辺部1aのみを回収する単独機能のものであったが、この回収装置は、ウェーハ周辺部1aと表面1bの両方を回収するものであり、周知の横置き型であるウェーハ表面1bの被測定物の回収装置と、前記した横置き型のウェーハ周辺部1aの被測定物の回収装置とを備えたものである。ウェーハ周辺部1aの被測定物の回収装置の構成および動作は上述したと同様のものである。   FIG. 3 is a configuration diagram showing a device for collecting an object to be measured of the wafer 1 according to another embodiment. The recovery device of the above embodiment has a single function of recovering only the wafer peripheral portion 1a. However, this recovery device recovers both the wafer peripheral portion 1a and the surface 1b, and is a well-known horizontal type. The apparatus for recovering the object to be measured on the wafer surface 1b and the apparatus for recovering the object to be measured on the laterally placed wafer peripheral portion 1a are provided. The configuration and operation of the device for collecting the object to be measured at the wafer peripheral portion 1a are the same as described above.

ウェーハ表面1bの被測定物の回収装置は、ウェーハ1表面に滴下した回収液の液滴3を保持具5で保持しながらウェーハ表面1b上で移動させて、ウェーハ表面1bに存在する被測定物を回収するものであり、気相分解装置および試料回収装置を備えている。気相分解装置は、ウェーハ表面1bに存在する被測定物またはウェーハ表面1bに形成された膜の表面もしくは膜中に存在する被測定物を図示しない分解室内でフッ化水素のような反応性ガスにより溶解後乾燥させてウェーハ表面1bに保持する。そして、試料回収装置は、保持具5からウェーハ1の外周近傍にフッ化水素酸溶液を滴下した液滴3を、ウェーハ1を水平に回転させながら、保持具5で保持しつつアーム7によりウェーハ1上で中心まで移動させて、前記ウェーハ表面1bに保持された被測定物を回収する。なお、回収液の滴下位置や保持具5の移動経路はこれに限定されない。   The apparatus for collecting an object to be measured on the wafer surface 1b moves the wafer 3 on the wafer surface 1b while holding the droplet 3 of the collected liquid dropped on the surface of the wafer 1 with the holder 5, and the object to be measured present on the wafer surface 1b. The gas phase decomposition apparatus and the sample recovery apparatus are provided. The vapor phase decomposition apparatus is a reactive gas such as hydrogen fluoride in a decomposition chamber (not shown) in which a measurement object existing on the wafer surface 1b or a surface of a film formed on the wafer surface 1b or a measurement object existing in the film is not shown. After being dissolved, it is dried and held on the wafer surface 1b. Then, the sample recovery apparatus uses the arm 7 to hold the droplet 3 in which the hydrofluoric acid solution is dropped from the holder 5 near the outer periphery of the wafer 1 while holding the wafer 1 horizontally while holding the wafer 5 with the arm 7. The object to be measured held on the wafer surface 1b is collected. In addition, the dropping position of the recovered liquid and the movement path of the holder 5 are not limited to this.

ウェーハ周辺部1aの回収装置とウェーハ表面1bの回収装置は、ともにウェーハ1を横置きにした横置き型であり、ウェーハ台2、回転機構12および/または保持具5(アーム7)を共用するものである。   Both the wafer peripheral portion 1a recovery device and the wafer surface 1b recovery device are of the horizontal type in which the wafer 1 is set horizontally, and share the wafer table 2, the rotation mechanism 12 and / or the holder 5 (arm 7). Is.

これにより、ウェーハ周辺部1aと表面1bの両方を回収する場合に、ウェーハ周辺部1aの回収装置を従来のウェーハ表面1bの回収装置と同様に横置き型としたことにより、装置が大型化することなくウェーハ周辺部1aの回収装置と従来のウェーハ表面1bの回収装置とを共用できる。   As a result, when both the wafer peripheral portion 1a and the surface 1b are recovered, the size of the apparatus is increased by making the recovery device for the wafer peripheral portion 1a a horizontal type like the conventional recovery device for the wafer surface 1b. It is possible to share the recovery device for the wafer peripheral portion 1a and the conventional recovery device for the wafer surface 1b.

本発明の一実施形態に係るウェーハ周辺部の被測定物の回収装置を示す構成図である。It is a block diagram which shows the collection | recovery apparatus of the to-be-measured object of the wafer peripheral part which concerns on one Embodiment of this invention. 図1の回収装置の他例を示す概略構成図である。It is a schematic block diagram which shows the other example of the collection | recovery apparatus of FIG. 他の実施形態に係るウェーハ周辺部の被測定物の回収装置を示す構成図である。It is a block diagram which shows the collection | recovery apparatus of the to-be-measured object of the wafer peripheral part which concerns on other embodiment. 全反射蛍光X線分析装置を示す構成図である。It is a block diagram which shows a total reflection fluorescent-X-ray-analysis apparatus.

符号の説明Explanation of symbols

1:ウェーハ
1a:ウェーハ周辺部
1b:ウェーハ表面
2:ウェーハ台
3:液滴
4:回収液保持台
5:保持具
12:回転機構
14:移動機構
1: Wafer 1a: Wafer peripheral portion 1b: Wafer surface 2: Wafer table 3: Droplet 4: Recovery liquid holding table 5: Holder 12: Rotating mechanism 14: Moving mechanism

Claims (12)

ウェーハをウェーハ台に水平に回転可能に保持する第1の工程と、
滴下した回収液の液滴を回収液保持台との間で挟む保持具により保持する第2の工程と、
前記回収液の液滴をウェーハ周辺部に接触させる第3の工程と、
ウェーハを水平に回転させながら、ウェーハ周辺部に存在する被測定物を前記回収液の液滴に回収する第4の工程と、
を備えた回収方法。
A first step of holding the wafer horizontally and rotatably on the wafer stage;
A second step of holding the dropped recovery liquid droplets by a holder sandwiched between the recovery liquid holding base and
A third step of bringing the droplet of the recovered liquid into contact with the peripheral portion of the wafer;
A fourth step of recovering the object to be measured present in the periphery of the wafer into droplets of the recovery liquid while rotating the wafer horizontally;
A recovery method comprising:
請求項1において、前記第3の工程は、前記回収液の液滴とウェーハ周辺部との接触に際して、前記回収液の液滴と接触するウェーハ周辺部の接触面積を変化させるように、回収液保持台をウェーハ台の方向へ移動させるものである回収方法。   3. The recovery liquid according to claim 1, wherein the third step includes a step of changing the contact area of the peripheral portion of the wafer in contact with the recovery liquid droplet when the recovery liquid droplet contacts the peripheral portion of the wafer. A collection method for moving the holding table in the direction of the wafer table. 請求項1において、被測定物が金属不純物である回収方法。   The recovery method according to claim 1, wherein the object to be measured is a metal impurity. 請求項において、さらに、ウェーハ表面に滴下した回収液の液滴をウェーハ表面との間で挟む保持具で保持しながらウェーハ表面上で移動させて、ウェーハ表面に存在する被測定物を回収する工程を備えた回収方法。 According to claim 1, further droplets of recovered liquid was dropped on the wafer surface is moved over the wafer surface while held by the holder sandwiching between the wafer surface, collecting the measured object present on the wafer surface A recovery method comprising a process. 請求項1からの回収方法のいずれかにより回収された被測定物を分析する分析方法。 Analysis method for analyzing a measured object recovered by any recovery method of claims 1 4. 請求項において、被測定物を蛍光X線分析法で分析する分析方法。 6. The analysis method according to claim 5, wherein the measurement object is analyzed by a fluorescent X-ray analysis method. ウェーハを水平に回転可能に保持するウェーハ台と、
滴下した回収液の液滴を台上で保持する回収液保持台と、
前記回収液の液滴を前記回収液保持台との間で挟むように保持する保持具と、
を備え、
ウェーハを水平に回転させながら、前記回収液保持台上の回収液の液滴にウェーハ周辺部を接触させて、ウェーハ周辺部に存在する被測定物を回収する回収装置。
A wafer stage for holding the wafer horizontally and rotatably;
A recovery liquid holding table that holds the dropped liquid droplets on the table;
A holder for holding the liquid drop of the recovery liquid so as to be sandwiched between the recovery liquid holding table;
With
A recovery device for recovering the object to be measured existing in the peripheral portion of the wafer by bringing the peripheral portion of the wafer into contact with the droplet of the recovery liquid on the recovery liquid holding table while rotating the wafer horizontally.
請求項において、さらに、前記回収液の液滴と接触するウェーハ周辺部の接触面積を変化させるように、回収液保持台をウェーハ台の方向へ移動させる移動機構を備えた回収装置。 8. The recovery apparatus according to claim 7 , further comprising a moving mechanism for moving the recovery liquid holding base in the direction of the wafer base so as to change the contact area of the peripheral portion of the wafer that contacts the liquid droplets of the recovery liquid. 請求項において、被測定物が金属不純物である回収装置。 8. The recovery apparatus according to claim 7, wherein the object to be measured is a metal impurity. 請求項において、ウェーハ表面に滴下した回収液の液滴をウェーハ表面との間で挟む保持具で保持しながらウェーハ表面上で移動させて、ウェーハ表面に存在する被測定物を回収する回収装置。 8. The recovery apparatus according to claim 7, wherein the recovery liquid dropped on the wafer surface is moved on the wafer surface while being held by a holder sandwiched between the wafer surface and the object to be measured existing on the wafer surface is recovered. . 請求項から10のいずれかに記載の回収装置と、回収された被測定物を分析する分析装置とを備えた分析システム。 An analysis system comprising the collection device according to any one of claims 7 to 10 and an analysis device for analyzing the collected measurement object. 請求項11において、分析装置が蛍光X線分析装置である分析システム。 12. The analysis system according to claim 11, wherein the analyzer is a fluorescent X-ray analyzer.
JP2003342830A 2003-10-01 2003-10-01 Method and apparatus for recovering object to be measured around wafer Expired - Fee Related JP4204434B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003342830A JP4204434B2 (en) 2003-10-01 2003-10-01 Method and apparatus for recovering object to be measured around wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003342830A JP4204434B2 (en) 2003-10-01 2003-10-01 Method and apparatus for recovering object to be measured around wafer

Publications (2)

Publication Number Publication Date
JP2005109292A JP2005109292A (en) 2005-04-21
JP4204434B2 true JP4204434B2 (en) 2009-01-07

Family

ID=34536978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003342830A Expired - Fee Related JP4204434B2 (en) 2003-10-01 2003-10-01 Method and apparatus for recovering object to be measured around wafer

Country Status (1)

Country Link
JP (1) JP4204434B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4521861B2 (en) 2004-06-28 2010-08-11 Sumco Techxiv株式会社 Semiconductor wafer chemical recovery method and apparatus
JP2017020992A (en) * 2015-07-15 2017-01-26 Jsr株式会社 Analytical method
JP6675652B1 (en) * 2018-12-26 2020-04-01 株式会社 イアス Substrate analysis method and substrate analysis device
CN115932163A (en) * 2021-08-10 2023-04-07 江苏鲁汶仪器股份有限公司 Edge scanning device and metal contamination detection equipment

Also Published As

Publication number Publication date
JP2005109292A (en) 2005-04-21

Similar Documents

Publication Publication Date Title
KR910006220B1 (en) Impurity measuring method and apparatus
JP3179175B2 (en) Analysis pretreatment method
JP2013190403A (en) Apparatus and method for analysing impurity
US5284802A (en) Container for semiconductor wafer sample and method of preparing sample
CN111656199A (en) Automatic sampler vessel identification and contaminant monitoring
JP4204434B2 (en) Method and apparatus for recovering object to be measured around wafer
JP4755746B2 (en) Method for measuring impurities on semiconductor wafer surface and impurity recovery apparatus therefor
US9989484B2 (en) X-ray fluorescence analyzing system
JP4450117B2 (en) Water quality evaluation method for silicon substrate cleaning ultrapure water
JPH1064966A (en) Container for recovering metal and method for recovering metal
JP2006214877A (en) Vapor phase decomposition device, sample pretreatment device using the same, and x-ray fluorescence analytical system
JP4693268B2 (en) Sample water quality evaluation method
KR102226471B1 (en) Method of Sample solution sampling of substrate inspection machine and device therefor
JP2004347543A (en) Evaluation method of semiconductor wafer and its evaluation device
JPH02229428A (en) Semiconductor treatment apparatus
JP2001242052A (en) Method for analyzing impurity in semiconductor substrate or chemicals
JP3804864B2 (en) Impurity analysis method
JP2004109072A (en) Analysis method for metal impurity in solution
US5055413A (en) Method of measuring impurities in oxide films using a meltable sample collection stick
JPH11204604A (en) Method and apparatus for collecting metallic impurity in wafer periphery
JP3627918B2 (en) Semiconductor substrate surface evaluation analyzer and jig used therefor
JP3754350B2 (en) Semiconductor substrate analysis method and analyzer
JP3890047B2 (en) Method for analyzing metal in quartz and jig for analysis
JP2002289660A (en) Method for evaluating semiconductor wafer and its evaluation apparatus
Shimazaki et al. Chemical analysis of silicon wafer surface contamination

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060725

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080325

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080520

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081007

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081014

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111024

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4204434

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111024

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111024

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121024

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131024

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

SG99 Written request for registration of restore

Free format text: JAPANESE INTERMEDIATE CODE: R316G99

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

SG99 Written request for registration of restore

Free format text: JAPANESE INTERMEDIATE CODE: R316G99

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S803 Written request for registration of cancellation of provisional registration

Free format text: JAPANESE INTERMEDIATE CODE: R316805

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees
S803 Written request for registration of cancellation of provisional registration

Free format text: JAPANESE INTERMEDIATE CODE: R316805

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350