CN110634732B - Photoetching process method - Google Patents
Photoetching process method Download PDFInfo
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- CN110634732B CN110634732B CN201910821876.5A CN201910821876A CN110634732B CN 110634732 B CN110634732 B CN 110634732B CN 201910821876 A CN201910821876 A CN 201910821876A CN 110634732 B CN110634732 B CN 110634732B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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Abstract
The invention discloses a photoetching process method, which comprises the following steps: step one, carrying out pretreatment on a substrate to change the surface state of the substrate, comprising the following steps: step 11, performing a first dry pretreatment, wherein the first dry pretreatment adopts oxygen plasma ashing treatment; step 12, carrying out second wet pretreatment, wherein the second wet pretreatment adopts a hot APM solution to clean the surface of the substrate; step two, carrying out hydrophobic treatment on the surface of the substrate; and step three, coating photoresist. The invention can increase the adhesion between the substrate and the photoresist and prevent the photoresist from shifting or stripping after development.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor integrated circuit, and more particularly, to a photolithography process.
Background
Photolithography is an important process step in integrated circuit fabrication to achieve accurate transfer of design patterns to a substrate. The existing photoetching process method comprises the following steps:
step one, providing a substrate needing photoetching definition, such as a substrate consisting of a silicon substrate, and finishing a front layer process on the substrate.
And step two, performing hydrophobic treatment on the surface of the substrate, wherein the hydrophobic treatment is realized by adopting Hexamethyldisilazane (HMDS) surface treatment.
And step three, coating photoresist on the surface of the substrate.
And fourthly, carrying out prebaking, exposure, development and postbaking on the photoresist, wherein the developed photoresist forms a photoresist pattern.
Fifthly, carrying out graph alignment measurement;
and step six, measuring the line width of the graph.
And seventhly, performing ion implantation or etching by taking the photoresist pattern as a mask.
The existing method is easy to shift or strip the photoresist after developing under the condition of some special processes, such as bare silicon (bare silicon), Polysilicon (POLY), and the surface state of a substrate with large local step difference, and under the condition that the photoetching pattern is too thin and long, the photoresist is easy to shift or strip after developing, and the defects that the photoresist is easy to shift or strip after developing can not be improved by adopting the conventional photoetching process adjustment such as the adjustment of HMDS surface treatment, prebaking, developing, postbaking and the like.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a photoetching process method, which can increase the adhesion between a substrate and a photoresist and prevent the photoresist from shifting or stripping after development.
In order to solve the technical problem, the photoetching process method provided by the invention comprises the following steps:
providing a substrate needing photoetching definition, and pretreating the substrate to change the surface state of the substrate so as to enhance the adhesion of the material of the substrate and photoresist; the pretreatment comprises the following steps:
and 11, carrying out first dry pretreatment on the surface of the substrate, wherein the first dry pretreatment adopts oxygen plasma ashing treatment.
And 12, carrying out second-step wet pretreatment on the substrate, wherein the second-step wet pretreatment adopts a hot APM solution to clean the surface of the substrate subjected to the first-step dry pretreatment.
And step two, performing hydrophobic treatment on the surface of the substrate.
And step three, coating photoresist on the surface of the substrate.
In a further improvement, the substrate in the first step is a semiconductor substrate, and a front layer process is completed on the substrate before the pretreatment.
The further improvement is that the substrate is a silicon substrate, and the surface of the substrate comprises a bare silicon surface, a polycrystalline silicon surface, a dielectric layer surface or a metal layer surface; the substrate has a local step structure on the surface.
The further improvement is that after the third step, the method also comprises the following steps:
and fourthly, exposing and developing the photoresist, wherein the developed photoresist forms a photoresist pattern.
The further improvement is that after the step four, the method also comprises the following steps:
and step five, carrying out pattern alignment measurement.
And step six, measuring the line width of the graph.
The further improvement is that after the sixth step, the method also comprises the following steps:
and seventhly, performing ion implantation or etching by taking the photoresist pattern as a mask.
The further improvement is that the temperature of the first dry pretreatment is 150-300 ℃.
The further improvement is that the temperature of the second step wet pretreatment is 50-70 ℃.
In a further improvement, the hydrophobic treatment in the second step is HMDS surface treatment.
In a further improvement, in the fourth step, a step of performing a pre-baking is further included before the exposure, and a step of performing a post-baking is further included after the development.
The invention carries out pretreatment on the surface of the substrate after the front layer process is finished on the substrate and before the hydrophobic treatment before the photoresist coating, the pretreatment comprises a first dry pretreatment adopting oxygen plasma ashing treatment and a second wet pretreatment adopting hot APM solution cleaning, the dry and wet pretreatment can change the surface state of the substrate well, for example, the surface state of the substrate with large difference of bare silicon, polysilicon and local steps can be changed well, thereby enhancing the adhesion of the material of the substrate and the photoresist, finally preventing the photoresist from shifting or stripping after being developed, and enabling the photoresist pattern to be well adhered to the surface of the substrate even if the photoresist pattern is too thin and long.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a flow chart of a photolithography process according to an embodiment of the present invention.
Detailed Description
As shown in fig. 1, it is a flowchart of a photolithography process method according to an embodiment of the present invention, and the photolithography process method according to an embodiment of the present invention includes the following steps:
providing a substrate needing photoetching definition, and pretreating the substrate to change the surface state of the substrate so as to enhance the adhesion of the material of the substrate and photoresist.
The substrate is a semiconductor substrate, and a front layer process is completed on the substrate before the pretreatment.
Preferably, the substrate is a silicon substrate, and the surface of the substrate comprises a bare silicon surface, a polycrystalline silicon surface, a dielectric layer surface or a metal layer surface; the substrate has a local step structure on the surface. In the prior art, the surface state of the substrate is a bare silicon surface, a polycrystalline silicon surface and a local step structure, and the photoetching pattern is too slender, such as the photoresist pattern after development is shifted or stripped. The first step of the embodiment of the invention can change the surface state of the substrate, and thus enhance the adhesion of the material of the substrate and the photoresist, thereby preventing the photoresist pattern after development from shifting or peeling.
The pretreatment comprises the following steps:
and 11, carrying out first dry pretreatment on the surface of the substrate, wherein the first dry pretreatment adopts oxygen plasma ashing treatment.
The temperature of the first step dry pretreatment is 150-300 ℃.
And 12, carrying out second-step wet pretreatment on the substrate, wherein the second-step wet pretreatment adopts a hot APM solution to clean the surface of the substrate subjected to the first-step dry pretreatment.
The temperature of the second step wet pretreatment is 50-70 ℃.
And step two, performing hydrophobic treatment on the surface of the substrate.
The hydrophobic treatment adopts HMDS surface treatment.
And step three, coating photoresist on the surface of the substrate.
And fourthly, exposing and developing the photoresist, wherein the developed photoresist forms a photoresist pattern.
Preferably, a step of performing a pre-bake is further included before the exposure, and a step of performing a post-bake is further included after the development.
And step five, carrying out pattern alignment measurement.
And step six, measuring the line width of the graph.
And seventhly, performing ion implantation or etching by taking the photoresist pattern as a mask.
The embodiment of the invention performs pretreatment on the surface of the substrate after the front layer process is completed on the substrate and before the hydrophobic treatment before the photoresist coating, wherein the pretreatment comprises a first dry pretreatment adopting oxygen plasma ashing treatment and a second wet pretreatment adopting hot APM solution cleaning.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (7)
1. A photoetching process method is characterized by comprising the following steps:
providing a substrate needing photoetching definition, and pretreating the substrate to change the surface state of the substrate so as to enhance the adhesion of the material of the substrate and photoresist;
the substrate is a silicon substrate, and a front layer process is completed on the substrate before the pretreatment;
the surface of the substrate comprises a bare silicon surface, a polycrystalline silicon surface, a dielectric layer surface or a metal layer surface; a local step structure is arranged on the surface of the substrate;
the pretreatment comprises the following steps:
step 11, carrying out first dry pretreatment on the surface of the substrate, wherein the first dry pretreatment adopts oxygen plasma ashing treatment;
step 12, performing a second wet pretreatment on the substrate, wherein the second wet pretreatment adopts a hot APM solution to clean the surface of the substrate subjected to the first dry pretreatment;
step two, carrying out hydrophobic treatment on the surface of the substrate;
thirdly, coating photoresist on the surface of the substrate;
after the third step, the method also comprises the following steps:
and step four, exposing and developing the photoresist, wherein the developed photoresist forms a photoresist pattern, and the adhesion force of the material of the substrate and the photoresist formed by the pretreatment can prevent the photoresist pattern from shifting or peeling.
2. A lithographic process as in claim 1, wherein: after the fourth step, the method also comprises the following steps:
fifthly, carrying out graph alignment measurement;
and step six, measuring the line width of the graph.
3. A lithographic process as in claim 2, wherein: after the sixth step, the method also comprises the following steps:
and seventhly, performing ion implantation or etching by taking the photoresist pattern as a mask.
4. A lithographic process as in claim 1, wherein: the temperature of the first step dry pretreatment is 150-300 ℃.
5. A lithographic process as in claim 1, wherein: the temperature of the second step wet pretreatment is 50-70 ℃.
6. A lithographic process as in claim 1, wherein: and the hydrophobic treatment in the second step adopts HMDS surface treatment.
7. A lithographic process as in claim 1, wherein: in the fourth step, a step of performing a pre-baking is further included before the exposure, and a step of performing a post-baking is further included after the development.
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| CN201910821876.5A CN110634732B (en) | 2019-09-02 | 2019-09-02 | Photoetching process method |
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| CN201910821876.5A CN110634732B (en) | 2019-09-02 | 2019-09-02 | Photoetching process method |
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| CN110634732B true CN110634732B (en) | 2022-03-04 |
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| CN100483261C (en) * | 2006-08-10 | 2009-04-29 | 中芯国际集成电路制造(上海)有限公司 | Method of forming photoresist pattern |
| CN101246309B (en) * | 2007-02-13 | 2011-07-06 | 中芯国际集成电路制造(上海)有限公司 | Photoresist mask forming method |
| EP2300147A1 (en) * | 2008-06-27 | 2011-03-30 | STMicroelectronics (Research & Development) Limited | Method for the fabrication of a biosensor on a semiconductor substrate |
| CN102148130B (en) * | 2010-02-09 | 2012-11-07 | 上海华虹Nec电子有限公司 | Method for improving control capability of surface photoetching process sensitive to external environment |
| JP2012151168A (en) * | 2011-01-17 | 2012-08-09 | Renesas Electronics Corp | Method of manufacturing semiconductor device |
| CN104977820B (en) * | 2014-04-02 | 2020-02-07 | 无锡华润上华科技有限公司 | Photoetching rework photoresist removing method and semiconductor forming method thereof |
| CN105676594A (en) * | 2016-01-21 | 2016-06-15 | 上海华虹宏力半导体制造有限公司 | Method for preventing photoresist layer from falling off |
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