CN106200272A - Self-aligned dual-pattern imaging method - Google Patents
Self-aligned dual-pattern imaging method Download PDFInfo
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- CN106200272A CN106200272A CN201510218532.7A CN201510218532A CN106200272A CN 106200272 A CN106200272 A CN 106200272A CN 201510218532 A CN201510218532 A CN 201510218532A CN 106200272 A CN106200272 A CN 106200272A
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Abstract
The invention provides a self-aligned dual pattern imaging method, which comprises the following steps: providing a substrate, and sequentially forming a layer to be etched, a first mask layer, a second mask layer and a first mask layer on the substrate; providing a first mask and a second mask, wherein the first mask provides a key pattern, and the second mask provides a non-key pattern; respectively utilizing a first mask and a second mask to carry out photoetching on the first photomask layer; etching to form a first secondary pattern on the second mask layer, and removing the first mask layer; forming a side wall around the first secondary graph, and removing the first secondary graph; etching by taking the side wall as a mask, forming a first mask layer pattern in the first mask layer, removing the side wall, and correcting the side wall to obtain a second pattern; and etching is carried out to transfer the second pattern to the layer to be etched, and the first mask layer is removed. The method provided by the invention reduces the steps of coating the photoresist and the circulation of the wafer among different devices, and can effectively reduce the cost of the photoetching process.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly to a kind of self-alignment duplex pattern formation method.
Background technology
Self-alignment duplex pattern imaging (self-aligned double patterning) technology has been used for
The Fin layer of fin transistor (FinFET) and the key of non-volatile flash memory (NAND)
In figure layer manufacturing process, to improve pattern density on chip, it is achieved more minor cycle pattern imaging.
The ultimate principle of self-alignment duplex pattern imaging technique, is to be two sets by circuit kit graphics decomposition
Figure, the most highdensity key graphic and the most low-density non-key figure, and then, point
Do not carry out imaging, thus improve the quality of imaging.
At present, in the application of self-alignment duplex pattern imaging process, mainly include step: first,
Form the pattern of highdensity key graphic, for the key graphic that density is high, generally use side wall to turn
Move technique and obtain its pattern, concrete, first use one piece of mask plate to form figure for the first time in the photoresist
Shape, then transfers to first time figure top layer mask layer by etching technics, and uses etching cutting
Technique obtains required size figure；Then, use depositing operation and etching technics, have for the first time
The sidewall of the top layer mask layer of figure forms sidewall figure, and removes top layer mask layer；Then, by side
Wall pattern etching is transferred in the hard mask layer of lower floor, to form second time figure, and this second time figure
Comprise highdensity key graphic.Then, deposit hard mask layer and photoresist layer thereon, adopt again
With another block mask plate, utilize lithographic technique, formation the 3rd figure in this hard mask layer, the 3rd
Figure is the non-key figure that density is relatively low.Common, key graphic and non-key figure it
After, in addition it is also necessary to one piece of mask plate, and carry out deposit again and the etching technics of hard mask, it is achieved to many
Remaining size carries out photoetching and etching.
In this self-alignment duplex pattern imaging process, need to be concatenated to form hard mask layer and photoresist layer,
Substrate is caused repeatedly to circulate between equipment for evenly dividing glue, lithographic equipment and film deposition equipment etc. so that institute
The time expended is long, simultaneously very big to the consumption of top layer mask material and Other substrate materials, makes
Become the relatively costly of existing self-alignment duplex pattern imaging.
Summary of the invention
Present invention seek to address that existing self-alignment duplex pattern imaging time-consumingly long, raw materials consumption amount is led greatly
Cause its relatively costly problem, it is provided that a kind of self-alignment duplex pattern formation method, can effectively reduce existing
Methodical cost.
The invention provides a kind of self-alignment duplex pattern formation method, including:
Substrate is provided, described substrate is sequentially formed with layer to be etched, the first mask layer, the second mask
Layer, the first mask layer；
The first mask plate and the second mask plate, the first mask plate is provided to provide key graphic, the second mask
Version provides non-key figure；
It is utilized respectively the first mask plate and the second mask plate carries out photoetching to the first mask layer；
Performing etching, formation figure for the first time is in the second mask layer, and removes the first mask layer；
Around first time figure, form side wall, and remove figure for the first time；
Perform etching for mask with side wall, the first mask layer is formed the first mask layer figure, and goes
Except side wall, then the first mask layer figure is modified, it is thus achieved that figure for the second time；
Perform etching and second time figure is transferred on layer to be etched, and remove the first mask layer.
Optionally, the described side wall that formed around first time figure includes:
Deposit the first top layer mask layer；
Carry out anisotropic etching, to form side wall on the sidewall of first time figure.
Optionally, described it is modified including to the first mask layer figure:
Form the second top layer mask layer and the second mask layer；
Using the 3rd mask plate that the second mask layer is carried out photoetching, the 3rd mask plate is the first mask layer figure
Shape provides correction pattern；
Second top layer mask layer is performed etching with the second mask layer for mask, with to the first mask layer figure
Shape is modified.
Optionally, it is utilized respectively the first mask plate described in and the second mask plate carries out light to the first mask layer
Carve and also include:
Use wet method shrinking process that litho pattern is carried out cutting.
Optionally, the etching forming figure for the first time and/or the etching being modified the first figure are for cutting out
Cut etching.
Optionally, described first mask layer uses positive photoresist, corresponding development to use negative development technique.
Optionally, described first mask layer uses negative photoresist, corresponding development to use positive development technique.
Optionally, described second time figure is copper interconnection groove figure, is formed by Damascus technics
Metal wire.
Optionally, described first mask layer includes that photoresist layer, bottom antireflection figure layer and/or top layer are anti-
Reflectogram layer and lamination thereof.
The self-alignment duplex pattern formation method that the present invention provides, be formed layer to be etched, the first mask layer,
On the substrate of the second mask layer and the first mask layer, by the first mask plate and use for forming key graphic
In the second mask plate of the non-key figure of formation, the first mask layer is carried out photoetching, then performs etching,
Second mask layer is formed figure for the first time, then, after forming side wall around first time figure, removes first
Secondary figure, performs etching acquisition the first mask layer figure with side wall for mask, and is modified it, formed
Figure for the second time, is finally transferred on layer to be etched.The present invention is by being used for being formed key graphic and non-
Two pieces of photolithography plates of key graphic, make key graphic and non-key figure all be imaged in the first mask layer, subtract
Lack substrate circulation between lithographic equipment and miscellaneous equipment, and decreased coating photoresist step, can have
Effect reduces the cost of self-alignment duplex pattern formation method.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present application or technical scheme of the prior art, below will be to enforcement
In example, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only
Some embodiments described in the present invention, for those of ordinary skill in the art, it is also possible to according to these
Accompanying drawing obtains other accompanying drawing.
The flow chart of the Fig. 1 self-alignment duplex pattern formation method for providing according to the embodiment of the present invention；
The schematic diagram of the Fig. 2 a kind of targeted graphical for providing according to the embodiment of the present invention；
A kind of cross section structure schematic diagram of the Fig. 3 substrate for providing according to the embodiment of the present invention；
A kind of mask of the Fig. 4 to the 7 self-alignment duplex pattern formation method for providing according to the embodiment of the present invention
Version group structural representation；
The preparation of the Fig. 8 to the 24 self-alignment duplex pattern formation method for providing according to the embodiment of the present invention
Structural representation in journey.
Detailed description of the invention
Embodiments of the invention are described below in detail, and the example of described embodiment is shown in the drawings, wherein certainly
Begin to same or similar label eventually represent same or similar element or there is the unit of same or like function
Part.The embodiment described below with reference to accompanying drawing is exemplary, is only used for explaining the present invention, and can not
It is construed to limitation of the present invention.
Additionally, the present invention can in different examples repeat reference numerals and/or letter.This repetition is
For purposes of simplicity and clarity, between itself not indicating discussed various embodiment and/or arranging
Relation.Additionally, the various specific technique that the invention provides and the example of material, but this area
Those of ordinary skill is it can be appreciated that the property of can be applicable to of other techniques and/or the use of other materials.
In order to be more fully understood that the present invention, formation method dual to autoregistration in prior art is carried out first below
Simple declaration.The principle of double-pattern imaging is that a set of highdensity circuitous pattern is resolved into two sets is discrete
, the figure of relative low density, and carry out twice imaging and twice etching, then they be printed on target
On wafer, basic step is first to print half figure, and develops, rotation figure one layer photoetching glue the most again, then
Printing other half figure, full graphics is transferred to process on wafer the most again, it can be broken through single and expose
The theoretical limit of the critical size of light.
Self-alignment type double exposure (SADP) technology is the one in double-pattern scheme, is also called sidewall
Wall transfer graphic technology, i.e. forms sidewall around first time figure, and is carved as mask by sidewall
Erosion wafer, to obtain less critical size.Its advantage is easy to control alignment precision and feature sizes,
But, side wall spacers would generally form closed shape, so that the covering for correction that at least one step is extra
Film version completes the making of circuit.In actual applications, for manufacturer, especially memory manufacturer is come
Say, cost control it is critical that, photoetching cost is the step that in semiconductor manufacturing, cost is the highest, therefore
The cost reducing autoregistration pattern imaging method is particularly important。
The self-alignment duplex pattern formation method that the present invention provides, by by key graphic and non-key figure all
Be formed in same mask layer, decrease coating photoresist step, and decrease substrate lithographic equipment and its
Circulation between its equipment, can effectively reduce the cost of self-alignment duplex pattern formation method.
In order to be better understood from technical scheme and technique effect, below with reference to flow chart with concrete
Embodiment be described in detail, flow chart is as shown in Figure 1.
In the embodiment of this example, as in figure 2 it is shown, be the figure that ultimately to be formed, this figure is metal
Interconnection layer, this metal interconnecting layer includes cycle two kind figures different with size, such as 501 figures and 502
Figure.
It is exemplified below the pattern for preparing design drawing 1 as shown in Figure 2, can be complete by following example
Become.
Embodiment one
Step S01, it is provided that substrate (not shown), described substrate is sequentially formed with layer to be etched
50, first mask layer the 40, second mask layer the 30, first mask layer 20, as shown in Figure 3.
In the present embodiment, it is provided that substrate to be processed, described substrate can be Si substrate, Ge substrate,
SiGe substrate, SOI (Silicon On Insulator, silicon-on-insulator) substrate etc..In other embodiments,
Can also be the substrate including other elemental semiconductors or compound semiconductor, such as GaAs, InP or
SiC etc., it is also possible to for laminated construction, such as Si/SiGe etc., it is also possible to for other epitaxial structures, example
Such as SGOI (silicon germanium on insulator) etc..In the present embodiment, described substrate is body silicon substrate, and
50, first mask layer the 40, second mask layer the 30, first mask layer layer to be etched it is formed with on substrate
20, with reference to shown in Fig. 2.
Described layer to be etched 50 can be dielectric layer, such as LI (local interlinkage) silicon oxide, each layer
ILD (inter-level dielectric) oxide, nitride, nitrogen oxides, it is also possible to for high/low K dielectric layer,
Diffusion impervious layer etc.；Can also be that other are layer to be etched, such as polycrystalline silicon grid layer, metal layer etc..
CVD (chemical gaseous phase deposition), PVD (physical vapour deposition (PVD)), ALD (atomic layer deposition can be passed through
Long-pending) etc. method prepare above-mentioned layer to be etched on substrate.
First mask layer 40 can be silicon nitride film, silicon oxide film, polysilicon membrane, unformed
Silicon thin film or other suitable hard mask materials etc. and lamination thereof.First mask material can select with
Selective etching between material layer to be etched compares material that should be bigger.
Described second mask layer 30 can be amorphous carbon layer, hard anti-reflection layer or other are the hardest
Mask material etc. and lamination thereof.Second mask material can select and the first mask material, to be etched
Lose the material that the selective etching ratio between layer material should be bigger.
First mask layer 20 can include bottom layer anti-reflection layer and/or top layer anti-reflecting layer, photoresist layer
Deng and lamination.Described photoresist can be positive glue or negative glue.
In a specific embodiment, described substrate is body silicon substrate, already formed with institute on this substrate
The device architecture needed, the interlayer dielectric layer for this substrate layer to be etched, interconnect for isolating metal,
Concrete, first deposition ILD layer is as layer to be etched 50, and it can include advanced low-k materials,
The high parasitic capacitance caused during to reduce metallized traces；Then Si is deposited3N4Thin film is as the first mask
Layer 40, it has bigger selective etching ratio with layer to be etched；Then deposition amorphous carbon layer and hard resist
Reflecting layer is as the second mask layer 30, and it is with the first mask layer and layer to be etched has bigger selection to carve
Erosion ratio；Finally it is sequentially prepared bottom layer anti-reflection layer, positive photoresist, top layer anti-reflecting layer with spin-coating method,
Form the first mask layer 20.
Step S02, it is provided that the first mask plate 10 and the second mask plate 11, the first mask plate 10 is used for
Forming key graphic, the second mask plate 11 is used for being formed non-key figure, as shown in Figures 4 to 7.
In the present embodiment, it is provided that for forming the first mask plate 10 of key graphic, described crucial figure
Shape refers to line thickness and figure cycle less figure；Cross section structure figure such as Fig. 4 of first mask plate 10
Shown in, the top view of the first mask plate 10 is as shown in Figure 5.The such as figure cycle soaks less than 193nm
Do not has the figure of the single photolithography limitation of formula litho machine.The second mask for forming non-key figure is provided
Version 11, described non-key figure refers to the figure beyond key graphic, and its size and cycle are all higher than key
Figure, Fig. 6 is the cross section structure figure of the second mask plate 11, and Fig. 7 is the vertical view of the second mask plate 11
Figure.
In a specific embodiment, it is provided that the first mask plate 10, as shown in Figure 5, Figure 6, this is covered
The line thickness of film version and cycle are 2 times of the line thickness in design drawing 1 and cycle.This be by
The single photolithography limitation of 193nm immersion lithography machine it is less than, it is necessary to adopt in the figure cycle of design drawing 1
Figure could be shifted by photoetching process by the method in the cycle of expansion.Second mask plate 11 is provided, as
Shown in Fig. 6, Fig. 7.This mask plate is used for forming non-key figure.
Particularly, as it is shown in figure 5, the lines of the first mask plate 10 and the distance in gap can identical or
Difference, adjusts concrete size according to actual photoetching demand.
Step S03, is utilized respectively the first mask plate 10 and the second mask plate 11 to the first mask layer 20
Carry out photoetching, as shown in Figure 8, Figure 9.
In the present embodiment, using two pieces of mask plates to be exposed respectively, one piece of mask plate is used for being formed
Key graphic, another block mask plate is used for forming non-key figure, owing to using exposure respectively to form light
Needle drawing case, the structure that structure that size is big is little with size will not influence each other in exposure, it is to avoid photoetching
Rear some close on the figure deformation of small scale structures of coarse scale structures, or size goes beyond the scope, based on
The mask plate group that the present embodiment provides, can transfer to same light shield by key graphic and non-key figure
In Ceng, thus can solve in tradition self-alignment duplex pattern formation method too much to photoresist demand
Problem, and decrease the number of times that substrate circulates between distinct device.
In a specific embodiment, first by right for forming the first mask plate 10 of key graphic
First mask layer 20 is exposed, and the first mask plate 10 times light distribution 100 is as shown in Figure 8；No
Carry out developing process, be then used by the second mask plate 11 for forming non-key figure to the first light shield
Layer 20 is exposed, and the second mask plate 11 times light distribution 110 is as shown in Figure 9；To carry out twice
Substrate after exposure is put in sol evenning machine and is once developed, and forms litho pattern 201, as shown in Figure 10.
Wherein, the photoresist that double exposure uses is positive photoresist, and developing process is negative development, i.e.
There is solidification crosslinking in photosensitive region photoresist, non-photosensitive region is removed in negative development technique.
Step S04, performs etching, and formation figure 300 for the first time is in the second mask layer 30, and goes
Except the first mask layer 20, as shown in Figure 11 to 14.
In the present embodiment, the second mask layer 30 is performed etching with above-mentioned litho pattern 201 for mask,
Obtain figure 300 for the first time, remove the first mask layer 20 the most again.
Further, in actual applications, it may be necessary to first time figure 300 is carried out cutting, with
Obtain the first time figure of suitable dimension.Certain ripple is there is generally, due to photoetching and/or etching technics
Dynamic property, the line thickness of mask plate there is also certain redundancy range simultaneously so that forms figure after etching
Size and the design configuration size of shape have certain deviation；Or in order to obtain smaller size of figure,
Generally require the figure that etching is formed and carry out cutting technique, obtain and meet the graphic scale that design requires
Very little.Wherein, cutting technique can be depending on concrete processing step, such as, when formed after etching
When etched features size is bigger than normal, by cutting etching, first time figure 300 can be carried out cutting.Institute
Stating cutting object can be first mask layer 40, second mask layer 30 etc. and lamination thereof.Described cutting
Etching for the figure formed after etching, is being removed on it before mask, is again being performed etching, or adopt
With new lateral dimension etching technics, i.e. in longitudinal etching process, control etch technological condition or etching
Reacting gas etc. realize the accurate etching to lateral dimension..
In a specific embodiment, the litho pattern 201 formed after photoetching with the first mask layer 20
For mask, the second mask layer 30 i.e. indefiniteness carbon-coating and hard anti-reflection layer are performed etching, and removes
First mask layer 20, it is thus achieved that figure 300 for the first time.Wherein, first time figure 300 is measured,
If the size of figure is in the certain limit requiring size more than design, then according to the size wanting cutting
And cutting etch rate calculates the time needing to increase etching, and again first time figure 300 is carried out
Etching, until the size forming figure after Ke Shi reaches to design requirement.
Step S05, forms side wall 310 around first time figure 300, and removes figure for the first time
300, as shown in Figure 15 to Figure 17.
In the present embodiment, the described side wall 310 that formed around first time figure 300 includes:
Deposit the first top layer mask layer 31；Carry out anisotropic etching, with at first time figure 300
Side wall 310 is formed on sidewall.
In actual applications, can be thin with the deposition of plane according to side wall 310 thickness of design and sidewall
Film rate ratio, calculates thin film deposition thickness to be set, then uses depositing operation, such as atomic layer
Thin film deposition processes, deposits the first top layer mask layer 31, such as SiO2Thin film.Then anisotropy is used
Etching, if the etching technics such as RIE, ICP are to SiO2Thin film performs etching, until exposing or partly carving
Lose the first mask layer 40, form side wall 310.Etching technics is finally used to remove figure 300 for the first time.
Wherein, the etching technics removing figure 300 for the first time need to keep the shape of side wall 310 and ensure its chi
Very little do not affected by etching technics.
Step S06, performs etching with side wall 310 for mask, forms first in the first mask layer 40
Mask layer figure, and remove side wall 310, then, the first mask layer figure is modified, it is thus achieved that
Figure for the second time.As shown in Figure 18 to Figure 22.
In the present embodiment with side wall 310 as mask, the first mask layer 40 is performed etching, it is thus achieved that the
One mask layer figure 400, then removes side wall, and is modified the first mask layer figure 400,
Using revised first mask layer figure 400 as second time figure 410.
In actual applications, the figure formed due to self-alignment duplex pattern formation method is Guan Bi,
It is thus desirable to use a step etch step to remove unnecessary coupling part, to the first mask layer figure formed
Shape 400 is modified, and using revised first mask layer figure as second time figure 410.Example
As: in the step obtaining second time figure 410, forming the first mask layer figure 400 and removing
After side wall 310, the first mask layer figure 400 is carried out lithographic etch process, removes unnecessary company
Connect part, using revised first mask layer figure as second time figure 410.Wherein, to first
Mask layer figure 400 is modified including:
Form the second top layer mask layer 60 and the second mask layer 70；Use the 3rd mask plate 12 to second
Mask layer 70 carries out photoetching, and the 3rd mask plate 12 is for forming the correction of the first mask layer figure 400
Figure；Second top layer mask layer 60 is performed etching with the second mask layer 70 for mask, to complete
The correction of one mask layer figure 400.Wherein, described correction refers to remove unnecessary side wall 310, makes to cover
Film pattern no longer because of the inherent characteristics of self-alignment duplex pattern formation method, results in image all
Closed figures, as shown in figure 20.
In a specific embodiment, with side wall 310 as mask, to the first mask layer 40, such as Si3N4
Thin film performs etching, until exposing layer to be etched 50, such as ILD layer.Spin coating the second top layer is covered the most again
Film layer 60, such as agraphitic carbon foamed film, or selects other and the first mask layer and selection layer to be etched
Material that etching ratio is big and corresponding preparation technology.Utilize the 3rd mask plate 12 to carry out photoetching process, formed
The correction pattern of the first mask layer figure 400, then removes unnecessary side wall 310 by etching, with
Reach the purpose that the first mask layer figure 400 is modified, and by revised first mask layer figure
Shape is as second time figure 410.
Step S07, performs etching and is transferred on layer to be etched 50 by second time figure 410, and remove
First mask layer 40, as shown in Figure 23, Figure 24.
In the present embodiment, transfer to treat by second time figure 410 by dry etching or wet etching
In etch layer.Owing to self-alignment duplex pattern formation method has easily controllable alignment precision and feature sizes
Advantage, be particularly suited for integrated circuit interconnection technique, described second time figure 410 can be copper-connection
Groove figure 500, after second time figure 410 being transferred to layer to be etched 50 by etching technics, goes
Except the first mask layer 40, then metal wire can be formed by Damascus technics.
Embodiment two
In the present embodiment, it is different from embodiment one, uses negative photoresist and positive development technique to complete
Photoetching process in the present embodiment, uses the method being modified photoresist simultaneously, and it is right to be finally reached
First mask layer figure 400 is modified, it is thus achieved that figure 410 for the second time.In the present embodiment, only retouch
Stating parts different in same embodiment one, identical part the most simply illustrates.
Step S11, it is provided that substrate, described substrate is sequentially formed with the 50, first mask layer to be etched
Layer 40, second mask layer the 30, first mask layer 20, as shown in Figure 3.
In the present embodiment, described substrate is Ge substrate, is mainly used in high speed device field.And
50, first mask layer the 40, second mask layer the 30, first mask layer layer to be etched it is formed with on substrate
20.Described 50, first mask layer the 40, second mask layer 30 layer to be etched is with embodiment one, herein
No longer enumerate.Being different from embodiment one, in the present embodiment, the first mask layer 20 uses negative photo glue-line
Or negative photo glue-line and the lamination of top layer anti-reflecting layer.
Step S12, it is provided that the first mask plate 10 and the second mask plate 11, the first mask plate 10 is used for
Forming key graphic, the second mask plate 11 is used for being formed non-key figure, as shown in Figures 4 to 7.
This step is with step S02 of embodiment one, it is provided that for forming the first mask plate of key graphic
10, described key graphic refers to the figure that live width is less；Offer is covered for forming the second of non-key figure
Film version 11, described non-key figure refers to the figure beyond key graphic, and its size and cycle are all higher than closing
Key figure.
Step S13, is utilized respectively the first mask plate 10 and the second mask plate 11 to the first mask layer 20
Carry out photoetching, as shown in Figure 8, Figure 9.
In the present embodiment, the first mask plate 10 and the second mask plate 11 are with embodiment one.Owing to inciting somebody to action
Key graphic in design drawing 1 is designed in one piece of mask plate, by the non-key figure in design drawing 1
It is designed in another mask plate, does not results in one piece of mask plate for concurrently forming key graphic and non-pass
The problem that lithographic process window that key figure causes is too small so that can be by key graphic and non-key figure
Shape is transferred in same mask layer.
Being different from embodiment one, in the present embodiment, double exposure uses negative photoresist, and developing process is
Positive development technique, i.e. photosensitive region photoresist crosslinks, and retained in positive development technique.?
After having developed, the size of litho pattern 201 is measured, when litho pattern 201 size ratio sets
Evaluation is bigger, or during for obtaining less critical size, can be by wet method shrinking process to photoetching
Figure 201 size carries out cutting；Described wet method shrinking process refers in the acid of litho pattern 201 surface-coated
Property material, and through high temperature bakee and again develop, by surface react photoresist remove, to light needle drawing
Shape 201 size carries out cutting.Described cutting object can be photoresist layer, hard anti-reflection layer and
Lamination.Additionally, in other embodiments, obtain less also by overexposure and/or development excessively
Critical size, described overexposure can reach by strengthening light shield light intensity and/or increase time of exposure；Institute
Stated development to reach by increasing solution level and/or increase developing time, it is also possible to for obtaining
The litho pattern 201 obtained develops again.
In a specific embodiment, first by right for forming the first mask plate 10 of key graphic
First mask layer 20 is exposed, and does not carry out developing process, is then used by for forming non-key figure
The second mask plate 11 first mask layer 20 is exposed, the substrate after double exposing is put
Enter in sol evenning machine and once develop, form litho pattern 201；Then, wet method shrinking process pair can be passed through
Litho pattern 201 carries out cutting.Wherein, described wet method shrinking process passes through acidic chemical liquid and light
Photoresist is reacted, and then removes acidic chemical liquid and the photoresist of surface reaction, to realize light needle drawing
The cutting of shape 201.Further, the baking of the photoresist of acidic chemical liquid can be coated with by control
Roasting temperature, and the response time of acidic chemical liquid and photoresist, obtain cutting size accurately.
Additionally, the exposure carrying out the first mask layer 20 can be overexposure, to obtain ratio the first mask
Litho pattern 201 critical size that version 10 critical sizes are less, the development after double exposure can be
Wet method shrinking process is used, to reduce the pass of the litho pattern 201 formed after development or normal development
Key size.
Step S14, performs etching, and formation figure 300 for the first time is in the second mask layer 30, and goes
Except the first mask layer 20, as shown in Figure 11 to 14.
In the present embodiment, with the first mask plate 10 and the second mask plate 11, second mask layer 30 is entered
Row etching, it is thus achieved that figure 300 for the first time, removes the first mask layer 20 the most again.Due to step S13
Litho pattern 201 having been carried out cutting, this step is without carrying out cutting to first time figure 300 again.
Particularly, require or uncommon when the cutting of litho pattern 201 is still unsatisfactory for design by step S13
Hope the critical size reducing figure 300 for the first time further, first time figure 300 can be cut out
Cut.Such as, by the cutting etching in embodiment one, first time figure 300 is carried out cutting.
Step S15, forms side wall 310 around first time figure 300, and removes figure for the first time
300, as shown in Figure 15 to Figure 17.Herein with step S05 of embodiment one, no longer describe in detail.
Step S16, performs etching with side wall 310 for mask, forms first in the first mask layer 40
Mask layer figure 400, and remove side wall 310, then the first mask layer figure is modified, it is thus achieved that
Figure 410 for the second time, as shown in Figure 18 to Figure 22.
In the present embodiment, with above-mentioned side wall 310 as mask, the first mask layer 40 is performed etching,
Obtain the first mask layer figure 400, then remove side wall 310, and the first mask layer figure 400 is entered
Row is revised, it is thus achieved that figure 410 for the second time.Wherein, the first mask layer figure 400 is modified
Mask pattern, photoetching process to be passed through obtains.
Step S17, performs etching and is transferred on layer to be etched 50 by second time figure 410, and remove
First mask layer 40, as shown in Figure 23, Figure 24.
By dry etching or wet etching, second time figure 410 is transferred on layer to be etched 50.On
State the gate patterns etc. that second time figure 410 can be integrated circuit leading portion.
In embodiments of the present invention, by by key graphic and non-key graphics decomposition to two mask plate
In, when overcoming key graphic and non-key graphic making in one piece of mask plate, photoetching process is made
The too small problem of process window become so that Twi-lithography can be carried out in same mask layer, reduces
To photoresist layer and the overfull demand of mask layer in traditional self-alignment duplex pattern formation method, and,
Twi-lithography is sequentially finished in same litho machine, reduces life cycle of the product, is finally reached fall
The purpose of low photoetching cost.
Each embodiment in this specification all uses the mode gone forward one by one to describe, phase homophase between each embodiment
As part see mutually.For embodiment two, owing to it is the side that the present invention provides
The another kind of example of method, so describing fairly simple, relevant part sees the part explanation of embodiment one i.e.
Can.Embodiments described above is only that schematically those of ordinary skill in the art are not paying creation
Property work in the case of, be i.e. appreciated that and implement.
Although the present invention discloses as above with preferred embodiment, but is not limited to the present invention.Appoint
What those of ordinary skill in the art, without departing under technical solution of the present invention ambit, all can profit
With the method for the disclosure above and technology contents, technical solution of the present invention made many possible variations and repair
Decorations, or it is revised as the Equivalent embodiments of equivalent variations.Therefore, every without departing from technical solution of the present invention
Content, according to the technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent
Change and modification, all still fall within the range of technical solution of the present invention protection.
Claims (9)
1. a self-alignment duplex pattern formation method, it is characterised in that include step:
Substrate is provided, described substrate is sequentially formed with layer to be etched, the first mask layer, the second mask
Layer, the first mask layer；
The first mask plate and the second mask plate, the first mask plate is provided to provide key graphic, the second mask
Version provides non-key figure；
It is utilized respectively the first mask plate and the second mask plate carries out photoetching to the first mask layer；
Performing etching, formation figure for the first time is in the second mask layer, and removes the first mask layer；
Around first time figure, form side wall, and remove figure for the first time；
Perform etching for mask with side wall, the first mask layer is formed the first mask layer figure, and goes
Except side wall, then the first mask layer figure is modified, it is thus achieved that figure for the second time；
Perform etching and second time figure is transferred on layer to be etched, and remove the first mask layer.
Method the most according to claim 1, it is characterised in that described around first time figure
Formation side wall includes:
Deposit the first top layer mask layer；
Carry out anisotropic etching, to form side wall on the sidewall of first time figure.
Method the most according to claim 1, it is characterised in that described to the first mask layer figure
It is modified including:
Form the second top layer mask layer and the second mask layer；
Using the 3rd mask plate that the second mask layer is carried out photoetching, the 3rd mask plate is the first mask layer figure
Shape provides correction pattern；
Second top layer mask layer is performed etching with the second mask layer for mask, with to the first mask layer figure
Shape is modified.
Method the most according to claim 1, it is characterised in that described in be utilized respectively the first mask
Version and the second mask plate carry out photoetching to the first mask layer and also include:
Use wet method shrinking process that litho pattern is carried out cutting.
5. according to the method described in claim 1 or 3, it is characterised in that form first time figure
Etching and/or the etching being modified the first figure are cutting etching.
Method the most according to claim 1, it is characterised in that described first mask layer is just using
Property photoresist, corresponding development uses negative development technique.
Method the most according to claim 1, it is characterised in that described first mask layer uses negative
Property photoresist, corresponding development uses positive development technique.
Method the most according to claim 1, it is characterised in that described second time figure is that copper is mutual
Even groove figure, forms metal wire by Damascus technics.
Method the most according to claim 1, it is characterised in that described first mask layer includes light
Photoresist layer, bottom antireflection figure layer and/or top layer antireflection figure layer and lamination thereof.
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