CN107731664A - A kind of method for increasing high-aspect-ratio lithographic process window by double-pattern technology - Google Patents
A kind of method for increasing high-aspect-ratio lithographic process window by double-pattern technology Download PDFInfo
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- CN107731664A CN107731664A CN201710987040.3A CN201710987040A CN107731664A CN 107731664 A CN107731664 A CN 107731664A CN 201710987040 A CN201710987040 A CN 201710987040A CN 107731664 A CN107731664 A CN 107731664A
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- Prior art keywords
- light shield
- process window
- light
- double
- lithographic process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
The present invention proposes a kind of method for increasing high-aspect-ratio lithographic process window by double-pattern technology, comprises the following steps：The technological requirement of photoetching is divided into the combination of Twi-lithography；First time photoetching treatment is carried out to technique figure using the first light shield；Second of photoetching treatment is carried out to technique figure using the second light shield；Wherein, the process window figure that first light shield and the second reticle combination are formed is the Pixel Dimensions of technological requirement, and first light shield and the second light shield are 1D groove figure light shields.The method proposed by the present invention for increasing high-aspect-ratio lithographic process window by double-pattern technology, for the level of high-aspect-ratio, when Pixel Dimensions are gradually reduced, in the case that target line width reduces, 1 layer of 2D dot pattern is splitted into by technology mode of 2 layers of 1D groove figures in combination with PSM light shields using double-pattern technology, increases the process window of high-aspect-ratio level.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing field, and it is more particularly to a kind of high by the increase of double-pattern technology
The method of depth-to-width ratio lithographic process window.
Background technology
There is depth-to-width ratio in process more than 10 at present:1 lithography layer, the purposes of the level is the isolation of pixel region, works as picture
Plain area's ion implantation dosage is bigger, and the function of device will be stronger；Simultaneously the level be also along " Moore's Law " and development generation
Top layer time, three Main ways that industry promotes：Pixel Dimensions reduce, critical dimension reduction, and photoresist thickeies.
At present the level graphic structure of existing product be 2D DOT figures, repeat DOT between space be pixel region
Key graphic, with current photoresistance thickness, depth-to-width ratio is more than 10：1, with the photoresistance thickness of current technique, with 2 exposures
The different of not caused enough the production line of lithographic process window occurs up to the limit and once in a while in Exposure mode, the process window of photoetching
Often.According to process exploitation requirement of the client to the level, when Pixel Dimensions continue to reduce, it is easier with DOT graphic structure
Cause the situation that figure collapses, i.e. lithographic process window deficiency.
The content of the invention
The present invention proposes a kind of method for increasing high-aspect-ratio lithographic process window by double-pattern technology, for profundity
The level of wide ratio, when Pixel Dimensions are gradually reduced, in the case that target line width reduces, using double-pattern technology by 1 layer of 2D point
Figure splits into technology mode of 2 layers of 1D groove figures in combination with PSM light shields, increases the process window of high-aspect-ratio level.
In order to achieve the above object, the present invention proposes a kind of by double-pattern technology increase high-aspect-ratio photoetching process window
The method of mouth, comprises the following steps：
The technological requirement of photoetching is divided into the combination of Twi-lithography；
First time photoetching treatment is carried out to technique figure using the first light shield；
Second of photoetching treatment is carried out to technique figure using the second light shield；
Wherein, the process window figure that first light shield and the second reticle combination are formed is the pixel chi of technological requirement
Very little, first light shield and the second light shield are 1D groove figure light shields.
Further, first light shield includes multiple groove figure light shields be arrangeding in parallel along a first direction, described
Second light shield includes multiple groove figure light shields being be arranged in parallel along second direction.
Further, the spacing of multiple groove figure light shields in a first direction is first size in first light shield,
The spacing of multiple groove figure light shields in a second direction is the second size in second light shield.
Further, the first size and the Pixel Dimensions of the second dimension combination formation process requirement.
Further, first light shield and the second light shield pass through position error method control combination figure.
Further, first light shield and the second light shield use the PSM light shields of 1D groove figures.
The method proposed by the present invention for increasing high-aspect-ratio lithographic process window by double-pattern technology, passes through double picture
The technology mode of shape, 1 layer of 2D figure is changed to 2 layers of 1D figures, and reduced with PSM light shields to reach Pixel Dimensions, line width subtracts
Small purpose.Invention increases the process window of photoetching, reduces the 2D figures risk that figure collapses under small pixel size.
Brief description of the drawings
Fig. 1 show the one-time formed 2D graphic structures schematic diagram of prior art.
Fig. 2 show the structural representation of the first light shield of present pre-ferred embodiments.
Fig. 3 show the structural representation of the second light shield of present pre-ferred embodiments.
Fig. 4 show present pre-ferred embodiments reticle combination structural representation.
Fig. 5 show the comparison diagram that the present invention uses BIM light shields using PSM light shields and prior art.
Embodiment
The embodiment of the present invention is provided below in conjunction with accompanying drawing, but the invention is not restricted to following embodiment.Root
According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simple
The form of change and non-accurately ratio is used, be only used for conveniently, lucidly aiding in illustrating the purpose of the embodiment of the present invention.
The present invention proposes a kind of method for increasing high-aspect-ratio lithographic process window by double-pattern technology, including following
Step：
The technological requirement of photoetching is divided into the combination of Twi-lithography；
First time photoetching treatment is carried out to technique figure using the first light shield；
Second of photoetching treatment is carried out to technique figure using the second light shield；
Wherein, the process window figure that first light shield and the second reticle combination are formed is the pixel chi of technological requirement
Very little, first light shield and the second light shield are 1D groove figure light shields.
Fig. 1 is refer to, Fig. 1 show the one-time formed 2D graphic structures schematic diagram of prior art.2D figures are in small pixel
(0.7*1.4um) can occur figure and collapse under size.
Fig. 2 and Fig. 3 are refer to, Fig. 2 show the structural representation of the first light shield of present pre-ferred embodiments, Fig. 3 institutes
It is shown as the structural representation of the second light shield of present pre-ferred embodiments.First light shield 100 includes multiple along first party
To the groove figure light shield be arrangeding in parallel, second light shield 200 includes multiple groove figures being be arranged in parallel along second direction
Shape light shield.
The spacing of multiple groove figure light shields in a first direction is first size in first light shield, the present invention compared with
First size described in good embodiment is 1.4um, in second light shield multiple groove figure light shields in a second direction between
Away from for the second size, the first size described in present pre-ferred embodiments is 0.7um.The first size and the second set of dimensions
The Pixel Dimensions of formation process requirement are closed, are 0.7*1.4um in present pre-ferred embodiments.
Fig. 4 show present pre-ferred embodiments reticle combination structural representation.The light shield of first light shield 100 and second
200 pass through position error method control combination figure.The composite figure ultimately formed, its process window size and technological requirement
Pixel Dimensions are identical, are 0.7*1.4um in present pre-ferred embodiments.
The present invention on the basis of the 2D figures of original 1 time shaping, splits into 2 blocks of light using the technique of double-pattern technology
The figure of cover, for example, when technological requirement reaches Pixel Dimensions 0.7*1.4um, the light shield of 2 layers of 1D groove figures can be split into
Be combined, 2 layers be respectively 1.4um spacing and 0.7um spacing 1D groove figures.Become big equivalent to by Pixel Dimensions, increase
The process window of photoetching, reduces the 2D figures risk that figure collapses under small pixel size.
Fig. 5 is refer to, Fig. 5 show the comparison diagram that the present invention uses BIM light shields using PSM light shields and prior art.Institute
State the first light shield and the second light shield uses the PSM light shields of 1D groove figures.The structure of BIM light shields has photoresistance Photo- in figure
Resist, AR-Cr film, quartzy Quartz, the structures of PSM light shields have photoresistance Photo-resist, AR-Cr a film, and MoSi is thin
Film and quartzy Quartz, it is respectively that BIM light shields (double luminous intensity light shields) and PSM light are set in glass Glass in photoetching treatment
Cover (phase displacement light-cover), react the intensity of illumination (Intensity at wafer) on wafer as shown in figure 5, finally in wafer
The figure shows of upper formation use the figure after PSM light shields not collapse.
On the premise of double-pattern technology, line width needs to continue to reduce (i.e. depth-to-width ratio become greatly), therefore by original BIM light
Cover is changed to PSM light shields, and PSM light shields have more preferable graphical resolution, finally realizes that Pixel Dimensions reduce, and line width reduces (deep wide
Than increase) and process window reached the requirement (DOF＆EL) of volume production.For example, the 2D figures of existing 1 shaping, depth-to-width ratio are
12：1 (minimum feature 260nm, photoresistance thickness 3200nm), after the technology, depth-to-width ratio can reach 16：More than 1 (minimum line
Width can reach 200nm, photoresistance thickness 3200nm).
Process experiences of the invention according to industry, by the level by 1 2D dot pattern by way of double-pattern technology
Photoetching splits into 2 1D groove figure photoetching, realizes with the groove figure (1D figures) of big 2 times Pixel Dimensions, is finally combined into
The mode of small pixel size.In order to increase the process window under small line width, employ PSM light shields and carry out process exploitation, relative to
BIM light shields, PSM light shields have more preferable resolution and are more suitable for groove figure according to industry experience PSM light shields, pass through experiment
Checking, can accomplish the line width of groove figure with the technology requirement of client, depth-to-width ratio can reach 16：More than 1, at present
The technology is verified on the product wafer of client and has obtained good feedback.
In summary, the method proposed by the present invention for increasing high-aspect-ratio lithographic process window by double-pattern technology,
By the technology mode of double-pattern, 1 layer of 2D figure is changed to 2 layers of 1D figures, and subtract to reach Pixel Dimensions with PSM light shields
Purpose small, that line width reduces.Invention increases the process window of photoetching, reduces 2D figures figure under small pixel size and falls
The risk collapsed.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.Skill belonging to the present invention
Has usually intellectual in art field, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations.Cause
This, the scope of protection of the present invention is defined by those of the claims.
Claims (6)
- A kind of 1. method for increasing high-aspect-ratio lithographic process window by double-pattern technology, it is characterised in that including following Step：The technological requirement of photoetching is divided into the combination of Twi-lithography；First time photoetching treatment is carried out to technique figure using the first light shield；Second of photoetching treatment is carried out to technique figure using the second light shield；Wherein, the process window figure that first light shield and the second reticle combination are formed is the Pixel Dimensions of technological requirement, institute It is 1D groove figure light shields to state the first light shield and the second light shield.
- 2. the method according to claim 1 for increasing high-aspect-ratio lithographic process window by double-pattern technology, it is special Sign is that first light shield includes multiple groove figure light shields be arrangeding in parallel along a first direction, the second light shield bag Include multiple groove figure light shields being be arranged in parallel along second direction.
- 3. the method according to claim 2 for increasing high-aspect-ratio lithographic process window by double-pattern technology, it is special Sign is, the spacing of multiple groove figure light shields in a first direction is first size in first light shield, second light The spacing of multiple groove figure light shields in a second direction is the second size in cover.
- 4. the method according to claim 3 for increasing high-aspect-ratio lithographic process window by double-pattern technology, it is special Sign is, the Pixel Dimensions of the first size and the requirement of the second dimension combination formation process.
- 5. the method according to claim 1 for increasing high-aspect-ratio lithographic process window by double-pattern technology, it is special Sign is that first light shield and the second light shield pass through position error method control combination figure.
- 6. the method according to claim 1 for increasing high-aspect-ratio lithographic process window by double-pattern technology, it is special Sign is that first light shield and the second light shield use the PSM light shields of 1D groove figures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710987040.3A CN107731664A (en) | 2017-10-20 | 2017-10-20 | A kind of method for increasing high-aspect-ratio lithographic process window by double-pattern technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710987040.3A CN107731664A (en) | 2017-10-20 | 2017-10-20 | A kind of method for increasing high-aspect-ratio lithographic process window by double-pattern technology |
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| CN107731664A true CN107731664A (en) | 2018-02-23 |
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| CN201710987040.3A Pending CN107731664A (en) | 2017-10-20 | 2017-10-20 | A kind of method for increasing high-aspect-ratio lithographic process window by double-pattern technology |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110955110A (en) * | 2019-12-23 | 2020-04-03 | 上海华力微电子有限公司 | Photomask assembly and photolithography method |
| CN112731775A (en) * | 2021-01-06 | 2021-04-30 | 华虹半导体(无锡)有限公司 | Photoetching process method for pattern with ultrahigh depth-to-width ratio |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379445A (en) * | 2001-04-03 | 2002-11-13 | 华邦电子股份有限公司 | Miniaturization process for reducing size of contact window |
| KR20120126715A (en) * | 2011-05-12 | 2012-11-21 | 에스케이하이닉스 주식회사 | Method for forming pattern of semiconductor device |
| CN105759560A (en) * | 2016-05-13 | 2016-07-13 | 武汉新芯集成电路制造有限公司 | Layout structure of combined photomask as well as formation method and application method for layout structure |
| US20160299418A1 (en) * | 2015-04-13 | 2016-10-13 | Windbond Electronics Corp. | Mask assembly and photolithography process using the same |
| CN106200272A (en) * | 2015-04-30 | 2016-12-07 | 中国科学院微电子研究所 | A kind of self-alignment duplex pattern formation method |
-
2017
- 2017-10-20 CN CN201710987040.3A patent/CN107731664A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379445A (en) * | 2001-04-03 | 2002-11-13 | 华邦电子股份有限公司 | Miniaturization process for reducing size of contact window |
| KR20120126715A (en) * | 2011-05-12 | 2012-11-21 | 에스케이하이닉스 주식회사 | Method for forming pattern of semiconductor device |
| US20160299418A1 (en) * | 2015-04-13 | 2016-10-13 | Windbond Electronics Corp. | Mask assembly and photolithography process using the same |
| CN106200272A (en) * | 2015-04-30 | 2016-12-07 | 中国科学院微电子研究所 | A kind of self-alignment duplex pattern formation method |
| CN105759560A (en) * | 2016-05-13 | 2016-07-13 | 武汉新芯集成电路制造有限公司 | Layout structure of combined photomask as well as formation method and application method for layout structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110955110A (en) * | 2019-12-23 | 2020-04-03 | 上海华力微电子有限公司 | Photomask assembly and photolithography method |
| CN110955110B (en) * | 2019-12-23 | 2023-08-18 | 上海华力微电子有限公司 | Photomask assembly and lithography method |
| CN112731775A (en) * | 2021-01-06 | 2021-04-30 | 华虹半导体(无锡)有限公司 | Photoetching process method for pattern with ultrahigh depth-to-width ratio |
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Application publication date: 20180223 |