CN110634527B - Nonvolatile memory processing method and device - Google Patents
Nonvolatile memory processing method and device Download PDFInfo
- Publication number
- CN110634527B CN110634527B CN201810661673.XA CN201810661673A CN110634527B CN 110634527 B CN110634527 B CN 110634527B CN 201810661673 A CN201810661673 A CN 201810661673A CN 110634527 B CN110634527 B CN 110634527B
- Authority
- CN
- China
- Prior art keywords
- voltage
- determining
- data
- programming
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
Abstract
The embodiment of the invention provides a nonvolatile memory processing method and a nonvolatile memory processing device, wherein the method comprises the following steps: acquiring a current data programming state in a nonvolatile memory; determining a regulating voltage according to the current data programming state; determining a first voltage corresponding to a current programming pulse; determining a second voltage corresponding to the next programming pulse according to the regulating voltage and the first voltage; in the next program pulse, a program operation is performed according to the second voltage. In the embodiment of the invention, the second voltage is determined according to the current actual programming condition of the nonvolatile memory, and the programming operation is carried out according to the second voltage in the next programming pulse, so that the reliable and efficient programming operation can be carried out in the whole programming process of the nonvolatile memory.
Description
Technical Field
The present invention relates to the field of memory processing technologies, and in particular, to a method and an apparatus for processing a nonvolatile memory.
Background
With the development of various electronic devices, embedded systems, and the like, nonvolatile memory devices are widely used in electronic products. Taking a non-volatile Memory NAND Flash Memory (NAND Flash Memory) as an example, the NAND Memory is composed of a plurality of Memory cells (cells), can realize multiple times of programming, and has large capacity, simple reading and writing, few peripheral devices and low price.
In the prior art, when a program operation (i.e., a write operation) is performed on a NAND memory, a program process usually corresponds to a plurality of program pulses, a voltage corresponding to the program pulse at the beginning is an initial voltage, and as the program operation is performed, a voltage corresponding to each program pulse is gradually increased according to a fixed program pulse voltage difference based on the initial voltage until the program operation is completed.
However, the inventor finds that the above technical solution has the following defects in the process of researching the above technical solution: if the fixed programming pulse voltage difference is small, damage to the cell is small when the NAND memory is subjected to programming operation, so that the reliability of the cell is high, but the programming efficiency is low; if the fixed programming pulse voltage difference is large, the programming efficiency is high when the NAND memory is programmed, but the cell is damaged, which results in the reduction of the reliability of the cell. That is, no matter what the fixed programming pulse voltage difference is set, a reliable and efficient programming operation of the nonvolatile memory cannot be realized.
Disclosure of Invention
In view of the above, embodiments of the present invention are proposed to provide a non-volatile memory processing method and apparatus that overcome or at least partially solve the above problems.
According to a first aspect of the present invention, there is provided a non-volatile memory processing method, the method comprising:
acquiring a current data programming state in a nonvolatile memory;
determining a regulating voltage according to the current data programming state;
determining a first voltage corresponding to a current programming pulse;
determining a second voltage corresponding to the next programming pulse according to the regulating voltage and the first voltage;
in the next program pulse, a program operation is performed according to the second voltage.
According to a second aspect of the present invention, there is provided a non-volatile memory processing apparatus, the apparatus comprising:
the current data programming state acquisition module is used for acquiring the current data programming state in the nonvolatile memory;
the adjusting voltage determining module is used for determining adjusting voltage according to the current data programming state;
the first voltage determining module is used for determining a first voltage corresponding to the current programming pulse;
the second voltage determining module is used for determining a second voltage corresponding to the next programming pulse according to the regulating voltage and the first voltage;
and the programming module is used for performing programming operation according to the second voltage in the next programming pulse.
In the embodiment of the invention, the current data programming state in the nonvolatile memory is firstly obtained, the regulating voltage is determined according to the current programming state, and the first voltage corresponding to the current programming pulse is determined; then determining a second voltage corresponding to the next programming pulse according to the current regulating voltage and the first voltage; that is, in the embodiment of the present invention, the second voltage is determined according to the current actual programming condition of the nonvolatile memory, for example, in one programming operation, the adjustment voltage may be determined to be a larger value according to the current data programming state, so that the second voltage is much larger than the first voltage, and in the next programming pulse, the programming efficiency may be improved by performing the programming operation according to the second voltage; in another programming, the adjusting voltage can be determined to be a negative value according to the current data programming state, so that the second voltage is smaller than the first voltage, and in the next programming pulse, the damage to the memory cell can be reduced by performing the programming operation according to the second voltage, and the reliability of the memory cell is improved; therefore, the reliable and efficient programming operation can be realized in the whole programming process of the nonvolatile memory.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a flow chart of a method for processing a non-volatile memory according to an embodiment of the present invention;
FIG. 2 is a flowchart illustrating a method for processing a non-volatile memory according to an embodiment of the present invention;
FIG. 3 is a block diagram of a non-volatile memory processing device according to an embodiment of the present invention;
FIG. 4 is a detailed block diagram of a nonvolatile memory processing apparatus according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below. It should be understood that the specific embodiments described herein are merely illustrative of the invention, but do not limit the invention to only some, but not all embodiments.
Example one
Referring to fig. 1, a flowchart of a processing method of a nonvolatile memory is shown, which may specifically include the following steps:
step 101: the current data programming state in the non-volatile memory is obtained.
In the embodiment of the invention, the nonvolatile memory can be provided with the detection module, and the current data programming state in the nonvolatile memory can be acquired through the detection module. In specific application, the detection module can acquire the current data programming state once after each programming pulse is finished, so that the current data programming state of the nonvolatile memory can be acquired after each programming pulse is finished, and the programming operation of the nonvolatile memory can be accurately controlled; the detection module may also acquire the current data programming state once after two or more programming pulses are completed, and intermittently acquire the current data programming state of the nonvolatile memory to reduce the occupation of the detection operation on resources.
In a specific application, the current data programming state in the nonvolatile memory may be: the number of programmed data or the number of unprogrammed data may be set by a person skilled in the art according to an actual application scenario, and the embodiment of the present invention does not limit the specific content of the current data programming state.
Step 102: and determining a regulating voltage according to the current data programming state.
In the embodiment of the invention, the data programming process of the nonvolatile memory is used as a dynamically adjustable process, and the adjusting voltage can be determined according to the current data programming state in the nonvolatile memory.
In a specific application, the adjustment voltage may be determined according to a comparison between a current data programming state and a last acquired data programming state. For example, if the current data program state is the amount of programmed data, the adjustment voltage may be determined according to the comparison between the current amount of programmed data and the amount of programmed data obtained last time. Specifically, if the amount of the currently programmed data is much larger than the amount of the programmed data obtained last time, it indicates that the current programming voltage is too large, the programming speed is too fast, and damage is easily caused to the memory cells of the nonvolatile memory, so that the adjustment voltage may be determined to be a negative value, or the adjustment voltage may be determined to be zero, i.e., the original programming voltage is kept from increasing.
In a specific application, the adjustment voltage can be determined according to the comparison condition of the current data programming state and all data needing to be programmed. For example, if the current data program state is the amount of programmed data, the adjustment voltage may be determined according to the amount of the current programmed data compared with the total amount of data to be programmed. Specifically, if the current amount of programmed data is much smaller than the total amount of data to be programmed, the programming voltage can be increased to increase the programming speed, and therefore the adjustment voltage can be determined to be a positive value.
It is understood that, according to the actual situation, a person skilled in the art may also determine the adjustment voltage by using other methods according to the current data programming state, which is not specifically limited in the embodiment of the present invention.
Step 103: a first voltage corresponding to a current programming pulse is determined.
In the embodiment of the invention, when the nonvolatile memory is programmed, each programming pulse corresponds to a programming voltage, and the voltage value corresponding to the currently acquired programming pulse is called as a first voltage.
Step 104: and determining a second voltage corresponding to the next programming pulse according to the regulating voltage and the first voltage.
In the embodiment of the invention, the adjusting voltage and the first voltage can be summed to obtain the second voltage. If the regulated voltage is a positive value, the second voltage is greater than the first voltage; if the regulated voltage is a negative value, the second voltage is less than the first voltage; if the regulated voltage is zero, the second voltage is equal to the first voltage. It is understood that a person skilled in the art may perform other linear operations on the adjustment voltage and the first voltage to obtain the second voltage, and the embodiment of the present invention is not limited in any way to determine the second voltage corresponding to the next programming pulse.
Step 105: in the next program pulse, a program operation is performed according to the second voltage.
In the embodiment of the invention, after the second voltage is determined, the determined second voltage is adopted to carry out programming operation in the next programming operation, and the second voltage is the programming voltage which accords with the current programming state of the nonvolatile memory, so that the reliable and efficient programming operation of the nonvolatile memory can be realized.
In summary, in the embodiment of the present invention, a current data programming state in the nonvolatile memory is first obtained, an adjustment voltage is determined according to the current programming state, and a first voltage corresponding to a current programming pulse is determined; then determining a second voltage corresponding to the next programming pulse according to the current regulating voltage and the first voltage; that is, in the embodiment of the present invention, the second voltage is determined according to the current actual programming condition of the nonvolatile memory, for example, in one programming operation, the adjustment voltage may be determined to be a larger value according to the current data programming state, so that the second voltage is much larger than the first voltage, and in the next programming pulse, the programming efficiency may be improved by performing the programming operation according to the second voltage; in another programming, the adjusting voltage can be determined to be a negative value according to the current data programming state, so that the second voltage is smaller than the first voltage, and in the next programming pulse, the damage to the memory cell can be reduced by performing the programming operation according to the second voltage, and the reliability of the memory cell is improved; therefore, the reliable and efficient programming operation can be realized in the whole programming process of the nonvolatile memory.
Example two
Referring to fig. 2, a specific flowchart of a processing method of a nonvolatile memory is shown, which may specifically include the following steps:
step 201: acquiring a current data programming state in a nonvolatile memory; the non-volatile memory corresponds to an initial programming pulse voltage difference.
In the embodiment of the present invention, an initial programming pulse voltage difference of the nonvolatile memory may be set, where the initial programming pulse voltage difference is: and when the regulating voltage is 0, the difference value of the programming voltages corresponding to every two adjacent programming pulses. Specifically, when the adjustment voltage is 0, if the program voltage corresponding to the previous program pulse is u0, the program voltage corresponding to the current program pulse is u1, and the program voltage corresponding to the next program pulse is u2, the difference between u1 and u0 is the initial program pulse voltage difference, and the difference between u2 and u1 is also the initial program pulse voltage difference.
Step 202: and determining a regulating voltage according to the current data programming state.
As a preferred solution of the embodiment of the present invention, the current data programming state includes: a first amount of programmed data at a current time, step 202 comprising:
determining a first difference between the first number and the second number; the second number is: a quantity of programmed data in the non-volatile memory at a first time; the first time is earlier than the current time; if the first difference is smaller than a first threshold value, determining that the regulating voltage is a positive value; if the first difference is larger than a first threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the first difference is equal to the first threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
In the embodiment of the present invention, the nonvolatile memory may set a storage location, and store the time and the amount of the programmed data acquired each time in the storage location. After acquiring the first amount of the current programmed data, the time of acquiring the first amount, and the second amount of the programmed data in the nonvolatile memory acquired when the first amount is stored in the storage location and the first time is taken out from the storage location may be acquired, where the first time is earlier than the current time, may be the time of acquiring the programmed data amount immediately before the current time, or may be any time earlier than the current time, and a specific value of the first time is not limited in the embodiments of the present invention.
In a specific application, determining a first quantity of currently programmed data, wherein a difference between the first quantity of the currently programmed data and a second quantity of the programmed data in the nonvolatile memory at a first moment is a first difference value, if the first difference value is smaller than a first threshold value, the quantity of the currently programmed data is indicated, and if the difference between the quantity of the currently programmed data and the quantity of the programmed data at the first moment is not large, the current programming efficiency can be judged to be low, so that the regulating voltage can be determined to be a positive value; if the first difference is greater than the first threshold, the number of currently programmed data is indicated, and the difference from the number of programmed data at the first time is greater, the current programming speed can be determined to be faster, and therefore, the adjustment voltage can be determined to be a negative value, or the adjustment voltage can be determined to be zero; if the first difference is equal to the first threshold, a person skilled in the art may determine, according to an actual situation, that the adjustment voltage is a positive value, or that the adjustment voltage is a negative value, or that the adjustment voltage is zero, which is not specifically limited in the embodiment of the present invention. The measurement units of the first threshold may be consistent with the measurement units of the first number and the second number, for example, the measurement units are uniformly set to be bits, bytes, double bytes, pieces, and the like, and the specific value of the first threshold may be set according to an actual application scenario, for example, when a requirement on the programming efficiency of the nonvolatile memory is high, the first threshold may be set to be a small value, and when a requirement on the performance reliability of the nonvolatile memory is high, the first threshold may be set to be a large value, and the first threshold is not specifically limited in the embodiment of the present invention.
As another preferred solution of the embodiment of the present invention, the current data programming state includes: a third amount of unprogrammed data at the present time, step 202 comprising:
determining a second difference between the third number and the fourth number; the third number is: the amount of unprogrammed data in the non-volatile memory at a second time; the second time is earlier than the current time; if the second difference is larger than a second threshold value, determining that the regulating voltage is a positive value; if the second difference is smaller than a second threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the second difference is equal to the second threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
In the embodiment of the present invention, the nonvolatile memory may set a storage location, and store the time and the amount of the programmed data acquired each time in the storage location. After acquiring the third amount of the current unprogrammed data, the time of acquiring the third amount, and the fourth amount of the programmed data in the nonvolatile memory acquired when the third amount is stored in the storage location and the second time is taken out from the storage location, where the second time is earlier than the current time, may be the time of acquiring the programmed data amount immediately before the current time, or may be any time earlier than the current time, and a specific value of the second time is not limited in the embodiments of the present invention.
In a specific application, determining that the difference between the current third amount of the unprogrammed data and the fourth amount of the unprogrammed data in the nonvolatile memory at the second moment is a second difference value, because the number of the unprogrammed data is reduced continuously during the programming operation, the second difference value is a negative value under a normal condition; if the second difference is larger than the second threshold, the number of the current unprogrammed data is indicated, and the difference between the number of the current unprogrammed data and the number of the unprogrammed data at the second moment is not large, the current programming efficiency can be judged to be low, so that the regulating voltage can be determined to be a positive value; if the second difference is smaller than the second threshold, the number of the current unprogrammed data is indicated, and the difference between the number of the current unprogrammed data and the number of the unprogrammed data at the second moment is larger, the current programming speed can be determined to be faster, so that the adjustment voltage can be determined to be a negative value, or the adjustment voltage can be determined to be zero; if the second difference is equal to the second threshold, a person skilled in the art may determine, according to an actual scenario, that the adjustment voltage is a positive value, or that the adjustment voltage is a negative value, or that the adjustment voltage is zero, which is not specifically limited in the embodiment of the present invention. The second threshold may be set to be a negative value, the measurement units of the second threshold may be consistent with the measurement units of the third number and the fourth number, for example, the measurement units are uniformly set to be bits, bytes, double bytes, units, and the like, the specific value of the second threshold may be set according to an actual application scenario, for example, when a requirement on the programming efficiency of the nonvolatile memory is high, the second threshold may be set to be a large negative value, and when a requirement on the performance reliability of the nonvolatile memory is high, the second threshold may be set to be a small negative value, which is not specifically limited in the embodiment of the present invention.
It can be understood that, in the embodiment of the present invention, the second threshold may be further set to be a positive value, the adjustment voltage is determined according to a magnitude relationship between the absolute value of the second difference and the second threshold, if the absolute value of the second difference is smaller than the second threshold, the number of the current unprogrammed data is indicated, and if the difference between the absolute value of the second difference and the number of the unprogrammed data at the second time is not large, the current programming efficiency may be determined to be low, so that the adjustment voltage may be determined to be the positive value; if the absolute value of the second difference is greater than the second threshold, the number of the current unprogrammed data is indicated, and the difference between the absolute value of the second difference and the number of the unprogrammed data at the second moment is greater, the current programming speed can be determined to be faster, and therefore, the adjustment voltage can be determined to be a negative value. The embodiment of the present invention is not particularly limited to this.
As another preferred solution of the embodiment of the present invention, the current data programming state includes: a fifth amount of programmed data at the present time, step 202 comprising:
determining a first ratio of the fifth amount to a total amount of data, the total amount of data being a total amount of data of initial data to be programmed in the nonvolatile memory; if the first ratio is smaller than a third threshold value, determining that the regulated voltage is a positive value; if the first ratio is larger than a third threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the first ratio is equal to the third threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
In the embodiment of the present invention, when the nonvolatile memory is initially programmed, the total amount of data that needs to be programmed may be determined, and after the fifth amount of currently programmed data is obtained, the first ratio of the fifth amount to the total amount of data may be determined.
In specific application, if the first ratio is smaller than the third threshold, the number of the currently programmed data is indicated, and the total data to be programmed is smaller, the current programming efficiency can be determined to be lower, so that the regulating voltage can be determined to be a positive value; if the first ratio is greater than the third threshold, the number of currently programmed data is indicated, and the ratio of the currently programmed data to the total data to be programmed is greater, the current programming speed can be determined to be faster, so that the adjustment voltage can be determined to be a negative value, or the adjustment voltage can be determined to be zero; if the first ratio is equal to the third threshold, a person skilled in the art may determine, according to an actual scenario, that the adjustment voltage is a positive value, or that the adjustment voltage is a negative value, or that the adjustment voltage is zero, which is not specifically limited in the embodiment of the present invention. The specific value of the third threshold may be set according to an actual application scenario, for example, when the requirement on the programming efficiency of the nonvolatile memory is high, the third threshold may be set to a smaller value, and when the requirement on the performance reliability of the nonvolatile memory is high, the third threshold may be set to a larger value.
As another preferred solution of the embodiment of the present invention, the current data programming state includes: a sixth amount of unprogrammed data at the present time, step 202, comprising:
determining a second ratio of the sixth quantity to a total amount of data, the total amount of data being a total amount of data of initial data to be programmed in the nonvolatile memory; if the second ratio is larger than a fourth threshold, determining that the regulated voltage is a positive value; if the second ratio is smaller than a fourth threshold, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the second ratio is equal to the fourth threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
In the embodiment of the present invention, when the nonvolatile memory is initially programmed, the total amount of data that needs to be programmed may be determined, and after the sixth amount of the current unprogrammed data is obtained, the second ratio of the sixth amount to the total amount of data may be determined.
In a specific application, if the second ratio is greater than the fourth threshold, the number of the current unprogrammed data is indicated, and the ratio of the current unprogrammed data to the total data to be programmed is greater, the current programming efficiency can be determined to be lower, so that the adjustment voltage can be determined to be a positive value; if the second ratio is smaller than the fourth threshold, the number of the current unprogrammed data is indicated, and the percentage of the total data to be programmed is smaller, the current programming speed can be determined to be faster, so that the adjustment voltage can be determined to be a negative value, or the adjustment voltage can be determined to be zero; if the second ratio is equal to the fourth threshold, a person skilled in the art may determine, according to an actual situation, that the adjustment voltage is a positive value, or that the adjustment voltage is a negative value, or that the adjustment voltage is zero, which is not specifically limited in the embodiment of the present invention. The specific value of the fourth threshold may be set according to an actual application scenario, for example, when a requirement on the programming efficiency of the nonvolatile memory is high, the fourth threshold may be set to a smaller value, and when a requirement on the performance reliability of the nonvolatile memory is high, the fourth threshold may be set to a larger value.
It is understood that, in practical applications, a person skilled in the art may also set a threshold of the programmed data amount in advance according to practical application scenarios, and after acquiring the current programmed data amount of the nonvolatile memory, if the current programmed data amount is smaller than the threshold of the preset programmed data amount, it may be determined that the current programming efficiency is low, and therefore, the adjustment voltage may be determined to be a positive value; if the current programmed data amount is greater than the threshold value for the preset programmed data amount, it may be determined that the current programming speed is fast, and thus, the adjustment voltage may be determined to be a negative value, or may be determined to be zero; if the current programmed data amount is equal to the threshold value of the preset programmed data amount, a person skilled in the art may determine that the adjustment voltage is a positive value, or determine that the adjustment voltage is a negative value, or determine that the adjustment voltage is zero according to an actual scenario, which is not specifically limited in this embodiment of the present invention.
In practical applications, a person skilled in the art may also preset a threshold of the quantity of unprogrammed data according to an actual application scenario, and after acquiring the current quantity of unprogrammed data of the nonvolatile memory, if the current quantity of unprogrammed data is greater than the threshold of the preset quantity of programmed data, it may be determined that the current programming efficiency is low, and therefore, the adjustment voltage may be determined to be a positive value; if the current amount of unprogrammed data is less than the threshold value for the preset amount of programmed data, it may be determined that the current programming speed is fast, and thus, the adjustment voltage may be determined to be a negative value, or may be determined to be zero; if the current amount of unprogrammed data is equal to the threshold value for the preset amount of programmed data, a person skilled in the art may determine the adjustment voltage to be a positive value, or determine the adjustment voltage to be a negative value, or determine the adjustment voltage to be zero according to an actual scenario, which is not specifically limited in this embodiment of the present invention.
Step 203: a first voltage corresponding to a current programming pulse is determined.
Step 204: and adjusting the initial programming pulse voltage difference value according to the adjusting voltage to obtain an actual adjusting voltage difference value.
Step 205: and determining a second voltage corresponding to the next programming pulse according to the difference value between the first voltage and the actual adjusting voltage.
In the embodiment of the invention, a voltage adjusting module can be arranged in the nonvolatile memory, and the voltage adjusting module can adjust the initial programming pulse voltage difference value. In a specific application, the sum of the adjustment voltage and the voltage difference of the initial programming pulse may be determined as the actual adjustment voltage difference. For example, if the adjustment voltage is a positive value, the actual adjustment voltage difference is determined to be a value greater than the initial program pulse voltage difference; if the adjustment voltage is a negative value, determining that the actual adjustment voltage difference is a value less than the initial programming pulse voltage difference; if the adjustment voltage is zero, the actual adjustment voltage difference is determined to be a value equal to the initial program pulse voltage difference. That is, in the embodiment of the present invention, the actual adjustment voltage difference is not a fixed value, but a dynamically changing value determined according to the current data programming state.
After the actual adjustment voltage difference is determined, the sum of the actual adjustment voltage difference and the first voltage may be used as the second voltage, and it can be understood that a person skilled in the art may perform other linear operations on the actual adjustment voltage difference and the first voltage to obtain the second voltage.
In the embodiment of the invention, the second voltage corresponding to the next programming pulse is determined by adjusting the initial programming pulse voltage difference value of the nonvolatile memory, the logic module can be simply arranged in the nonvolatile memory, the logic module adjusts the initial programming pulse voltage difference value according to the adjusting voltage, the adjusting mode is simple, and the method is easy to realize.
As another preferred solution of the embodiment of the present invention, the nonvolatile memory corresponds to an initial programming voltage, and an initial programming pulse voltage difference; steps 204 and 205 may be replaced with:
step A1: and determining an initial programming voltage adjustment value according to the regulating voltage.
Step A2: and determining a second voltage corresponding to the next programming pulse according to the first voltage, the initial programming voltage adjustment value and the initial programming pulse voltage difference value.
In an embodiment of the present invention, the initial programming voltage and the initial programming pulse voltage difference of the nonvolatile memory may be set such that when the adjustment voltage is 0, the programming voltage corresponding to each programming pulse is obtained by summing the initial programming voltage and one or more initial programming pulse voltage differences, and the difference between the programming voltages corresponding to each two adjacent programming pulses is the initial programming pulse voltage difference.
In a specific application, a voltage adjustment module may be disposed in the non-volatile memory, and the voltage adjustment module may adjust the initial programming voltage. Specifically, the adjustment voltage may be determined as an initial program voltage adjustment value. According to the initial programming voltage adjustment value, the initial programming voltage can be adjusted, that is, in the embodiment of the present invention, the actual initial programming voltage is not a fixed value, but a dynamically changing value determined according to the current data programming state.
After the initial programming voltage adjustment value is determined, the initial programming voltage adjustment value, the first voltage, and the initial programming pulse voltage difference value may be summed to obtain the second voltage, and it can be understood that a person skilled in the art may perform other linear operations on the initial programming voltage adjustment value, the first voltage, and the initial programming pulse voltage difference value to obtain the second voltage.
In the embodiment of the invention, the second voltage corresponding to the next programming pulse is determined by adjusting the initial programming voltage of the nonvolatile memory, and the method can be realized by simply setting a logic module in the nonvolatile memory and adjusting the initial programming voltage by the logic module according to the adjusted voltage; the initial programming voltage gradient option may also be set in the nonvolatile memory, where different gradient options correspond to different initial programming voltage values, and the adjustment of the initial programming voltage is realized by controlling the gradient option, which is not specifically limited in this embodiment of the present invention.
It is to be understood that, as another preferred implementation manner of the embodiment of the present invention, a voltage adjustment module may be further disposed in the nonvolatile memory, where the voltage adjustment module may implement adjustment of the initial programming voltage and adjustment of the initial programming pulse voltage difference, and determine the second voltage by adjusting the initial programming pulse voltage difference of the initial programming voltage at the same time, which is not specifically limited in the embodiment of the present invention.
Step 206: in the next program pulse, a program operation is performed according to the second voltage.
In summary, in the embodiment of the present invention, a current data programming state in the nonvolatile memory is first obtained, an adjustment voltage is determined according to the current programming state, and a first voltage corresponding to a current programming pulse is determined; then determining a second voltage corresponding to the next programming pulse according to the current regulating voltage and the first voltage; that is, in the embodiment of the present invention, the second voltage is determined according to the current actual programming condition of the nonvolatile memory, for example, in one programming operation, the adjustment voltage may be determined to be a larger value according to the current data programming state, so that the second voltage is much larger than the first voltage, and in the next programming pulse, the programming efficiency may be improved by performing the programming operation according to the second voltage; in another programming, the adjusting voltage can be determined to be a negative value according to the current data programming state, so that the second voltage is smaller than the first voltage, and in the next programming pulse, the damage to the memory cell can be reduced by performing the programming operation according to the second voltage, and the reliability of the memory cell is improved; therefore, the reliable and efficient programming operation can be realized in the whole programming process of the nonvolatile memory.
It should be noted that the foregoing method embodiments are described as a series of acts or combinations for simplicity in explanation, but it should be understood by those skilled in the art that the present invention is not limited by the order of acts or acts described, as some steps may occur in other orders or concurrently in accordance with the invention. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no particular act is required to implement the invention.
EXAMPLE III
Referring to fig. 3, there is shown a block diagram of a non-volatile memory processing apparatus, which may specifically include:
a current data programming state obtaining module 310, configured to obtain a current data programming state in the nonvolatile memory;
a regulation voltage determining module 320, configured to determine a regulation voltage according to the current data programming state;
a first voltage determining module 330, configured to determine a first voltage corresponding to the current programming pulse;
a second voltage determining module 340, configured to determine a second voltage corresponding to a next programming pulse according to the adjustment voltage and the first voltage;
a programming module 350, configured to perform a programming operation according to the second voltage in the next programming pulse.
Preferably, referring to fig. 4, on the basis of fig. 3, the apparatus may further include:
preferably, the non-volatile memory corresponds to an initial programming pulse voltage difference; the second voltage determining module 340 includes:
a second voltage determination first sub-module 3401, configured to adjust the initial programming pulse voltage difference according to the adjustment voltage to obtain an actual adjustment voltage difference; and determining a second voltage corresponding to the next programming pulse according to the difference value between the first voltage and the actual adjusting voltage.
Preferably, the non-volatile memory corresponds to an initial programming voltage, and an initial programming pulse voltage difference; the second voltage determining module 340 includes:
the second voltage determination second submodule is used for determining an initial programming voltage adjustment value according to the regulating voltage; and determining a second voltage corresponding to the next programming pulse according to the first voltage, the initial programming voltage adjustment value and the initial programming pulse voltage difference value.
Preferably, the current data program state includes: the adjustment voltage determining module 320 includes:
a first regulation voltage determination submodule 3201 for determining a first difference of the first number and the second number; the second number is: a quantity of programmed data in the non-volatile memory at a first time; the first time is earlier than the current time; if the first difference is smaller than a first threshold value, determining that the regulating voltage is a positive value; if the first difference is larger than a first threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the first difference is equal to the first threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
Preferably, the current data program state includes: a third amount of unprogrammed data at the present time, the adjustment voltage determining module 320 includes:
a second regulation voltage determination submodule 3202 for determining a second difference between the third number and the fourth number; the third number is: the amount of unprogrammed data in the non-volatile memory at a second time; the second time is earlier than the current time; if the second difference is larger than a second threshold value, determining that the regulating voltage is a positive value; if the second difference is smaller than a second threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the second difference is equal to the second threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
Preferably, the current data program state includes: a fifth amount of programmed data at the present time, the adjustment voltage determining module 320 includes:
a third adjustment voltage determining submodule 3203, configured to determine a first ratio of the fifth amount to a total amount of data, where the total amount of data is a total amount of data of initial data to be programmed in the nonvolatile memory; if the first ratio is smaller than a third threshold value, determining that the regulated voltage is a positive value; if the first ratio is larger than a third threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the first ratio is equal to the third threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
Preferably, the current data program state includes: a sixth amount of unprogrammed data at the present time, the adjustment voltage determining module 320 includes:
a fourth adjustment voltage determining submodule 3204, configured to determine a second ratio of the sixth amount to a total amount of data, where the total amount of data is a total amount of data of initial data to be programmed in the nonvolatile memory; if the second ratio is larger than a fourth threshold, determining that the regulated voltage is a positive value; if the second ratio is smaller than a fourth threshold, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the second ratio is equal to the fourth threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
In summary, in the embodiment of the present invention, a current data programming state in the nonvolatile memory is first obtained, an adjustment voltage is determined according to the current programming state, and a first voltage corresponding to a current programming pulse is determined; then determining a second voltage corresponding to the next programming pulse according to the current regulating voltage and the first voltage; that is, in the embodiment of the present invention, the second voltage is determined according to the current actual programming condition of the nonvolatile memory, for example, in one programming operation, the adjustment voltage may be determined to be a larger value according to the current data programming state, so that the second voltage is much larger than the first voltage, and in the next programming pulse, the programming efficiency may be improved by performing the programming operation according to the second voltage; in another programming, the adjusting voltage can be determined to be a negative value according to the current data programming state, so that the second voltage is smaller than the first voltage, and in the next programming pulse, the damage to the memory cell can be reduced by performing the programming operation according to the second voltage, and the reliability of the memory cell is improved; therefore, the reliable and efficient programming operation can be realized in the whole programming process of the nonvolatile memory.
For the device embodiment, since it is basically similar to the method embodiment, the description is simple, and for the relevant points, refer to the partial description of the method embodiment.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, apparatus, or computer program product. Accordingly, embodiments of the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
In a typical configuration, the computer device includes one or more processors (CPUs), input/output interfaces, network interfaces, and memory. The memory may include forms of volatile memory in a computer readable medium, Random Access Memory (RAM) and/or non-volatile memory, such as Read Only Memory (ROM) or flash memory (flash RAM). Memory is an example of a computer-readable medium. Computer-readable media, including both non-transitory and non-transitory, removable and non-removable media, may implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), Read Only Memory (ROM), Electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), Digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include non-transitory computer readable media (fransitory media), such as modulated data signals and carrier waves.
Embodiments of the present invention are described with reference to flowchart illustrations and/or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable non-volatile memory processing terminal to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable non-volatile memory processing terminal, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable non-volatile processing terminal to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable non-volatile memory processing terminal to cause a series of operational steps to be performed on the computer or other programmable terminal to produce a computer implemented process such that the instructions which execute on the computer or other programmable terminal provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the embodiments of the invention.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.
The present invention provides a nonvolatile memory processing method and a nonvolatile memory processing apparatus, which have been described in detail above, and the principles and embodiments of the present invention are explained herein by applying specific examples, and the descriptions of the above examples are only used to help understanding the method and the core ideas of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (12)
1. A non-volatile memory processing method, the method comprising:
acquiring a current data programming state in a nonvolatile memory;
determining a regulating voltage according to the current data programming state;
determining a first voltage corresponding to a current programming pulse;
determining a second voltage corresponding to the next programming pulse according to the regulating voltage and the first voltage;
in the next programming pulse, performing a programming operation according to the second voltage;
wherein the current data program state includes: determining a first amount of programmed data at a current time, said determining a regulation voltage based on said current data programming state, comprising:
determining a first difference between the first number and the second number; the second number is: a quantity of programmed data in the non-volatile memory at a first time; the first time is earlier than the current time;
if the first difference is smaller than a first threshold value, determining that the regulating voltage is a positive value;
if the first difference is larger than a first threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero;
if the first difference is equal to the first threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
2. The method of claim 1, wherein the non-volatile memory corresponds to an initial program pulse voltage difference;
the step of determining a second voltage corresponding to a next program pulse according to the adjustment voltage and the first voltage includes:
adjusting the initial programming pulse voltage difference value according to the adjusting voltage to obtain an actual adjusting voltage difference value;
and determining a second voltage corresponding to the next programming pulse according to the difference value between the first voltage and the actual adjusting voltage.
3. The method of claim 1, wherein the non-volatile memory corresponds to an initial programming voltage, and an initial programming pulse voltage difference;
the step of determining a second voltage corresponding to a next program pulse according to the adjustment voltage and the first voltage includes:
determining an initial programming voltage adjustment value according to the regulating voltage;
and determining a second voltage corresponding to the next programming pulse according to the first voltage, the initial programming voltage adjustment value and the initial programming pulse voltage difference value.
4. The method of claim 1, wherein the current data programming state comprises: a third amount of unprogrammed data at the current time, after the step of obtaining the current programming state of the data in the nonvolatile memory, the method further comprising:
determining a second difference between the third number and the fourth number; the fourth number is: the amount of unprogrammed data in the non-volatile memory at a second time; the second time is earlier than the current time;
if the second difference is larger than a second threshold value, determining that the regulating voltage is a positive value;
if the second difference is smaller than a second threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero;
if the second difference is equal to the second threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
5. The method of claim 1, wherein the current data programming state comprises: a fifth amount of programmed data at the current time, after the step of obtaining the current programming state of data in the non-volatile memory, the method further comprising:
determining a first ratio of the fifth amount to a total amount of data, the total amount of data being a total amount of data of initial data to be programmed in the nonvolatile memory;
if the first ratio is smaller than a third threshold value, determining that the regulated voltage is a positive value;
if the first ratio is larger than a third threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero;
if the first ratio is equal to the third threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
6. The method of claim 1, wherein the current data programming state comprises: a sixth amount of unprogrammed data at the present time, after the step of obtaining the programming state of the present data in the nonvolatile memory, the method further comprising:
determining a second ratio of the sixth quantity to a total amount of data, the total amount of data being a total amount of data of initial data to be programmed in the nonvolatile memory;
if the second ratio is larger than a fourth threshold, determining that the regulated voltage is a positive value;
if the second ratio is smaller than a fourth threshold, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero;
if the second ratio is equal to the fourth threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
7. A non-volatile memory processing apparatus, the apparatus comprising:
the current data programming state acquisition module is used for acquiring the current data programming state in the nonvolatile memory;
the adjusting voltage determining module is used for determining adjusting voltage according to the current data programming state;
the first voltage determining module is used for determining a first voltage corresponding to the current programming pulse;
the second voltage determining module is used for determining a second voltage corresponding to the next programming pulse according to the regulating voltage and the first voltage;
a programming module for performing a programming operation according to the second voltage in the next programming pulse;
wherein the current data program state includes: a first amount of programmed data at a current time, the adjustment voltage determination module comprising:
a first regulation voltage determination submodule for determining a first difference between the first number and the second number; the second number is: a quantity of programmed data in the non-volatile memory at a first time; the first time is earlier than the current time; if the first difference is smaller than a first threshold value, determining that the regulating voltage is a positive value; if the first difference is larger than a first threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the first difference is equal to the first threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
8. The apparatus of claim 7, wherein the non-volatile memory corresponds to an initial program pulse voltage difference;
the second voltage determination module includes:
the second voltage determination first submodule is used for adjusting the initial programming pulse voltage difference value according to the adjusting voltage to obtain an actual adjusting voltage difference value; and determining a second voltage corresponding to the next programming pulse according to the difference value between the first voltage and the actual adjusting voltage.
9. The apparatus of claim 7, wherein the non-volatile memory corresponds to an initial programming voltage, and an initial programming pulse voltage difference;
the second voltage determination module includes:
the second voltage determination second submodule is used for determining an initial programming voltage adjustment value according to the regulating voltage; and determining a second voltage corresponding to the next programming pulse according to the first voltage, the initial programming voltage adjustment value and the initial programming pulse voltage difference value.
10. The apparatus of claim 7, wherein the current data programming state comprises: a third amount of unprogrammed data at the present time, the adjustment voltage determination module further comprising:
a second regulation voltage determination submodule for determining a second difference between the third number and the fourth number; the fourth number is: the amount of unprogrammed data in the non-volatile memory at a second time; the second time is earlier than the current time; if the second difference is larger than a second threshold value, determining that the regulating voltage is a positive value; if the second difference is smaller than a second threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the second difference is equal to the second threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
11. The apparatus of claim 7, wherein the current data programming state comprises: a fifth amount of programmed data at the present time, the adjustment voltage determination module further comprising:
a third adjustment voltage determining submodule, configured to determine a first ratio of the fifth amount to a total amount of data, where the total amount of data is a total amount of data of initial data to be programmed in the nonvolatile memory; if the first ratio is smaller than a third threshold value, determining that the regulated voltage is a positive value; if the first ratio is larger than a third threshold value, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the first ratio is equal to the third threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
12. The apparatus of claim 7, wherein the current data programming state comprises: a sixth amount of unprogrammed data at the present time, the adjustment voltage determination module further comprising:
a fourth adjustment voltage determination submodule, configured to determine a second ratio of the sixth amount to a total data amount, where the total data amount is a total data amount of initial data to be programmed in the nonvolatile memory; if the second ratio is larger than a fourth threshold, determining that the regulated voltage is a positive value; if the second ratio is smaller than a fourth threshold, determining that the adjusting voltage is a negative value, or determining that the adjusting voltage is zero; if the second ratio is equal to the fourth threshold, determining that the regulated voltage is a positive value, or determining that the regulated voltage is a negative value, or determining that the regulated voltage is zero.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810661673.XA CN110634527B (en) | 2018-06-25 | 2018-06-25 | Nonvolatile memory processing method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810661673.XA CN110634527B (en) | 2018-06-25 | 2018-06-25 | Nonvolatile memory processing method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110634527A CN110634527A (en) | 2019-12-31 |
| CN110634527B true CN110634527B (en) | 2021-06-22 |
Family
ID=68967485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810661673.XA Active CN110634527B (en) | 2018-06-25 | 2018-06-25 | Nonvolatile memory processing method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110634527B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101421796A (en) * | 2006-03-28 | 2009-04-29 | 桑迪士克股份有限公司 | Program time adjustment as function of program voltage for improved programming speed |
| CN101584003A (en) * | 2006-10-10 | 2009-11-18 | 桑迪士克股份有限公司 | Variable program voltage increment values in non-volatile memory program operations |
| CN102089827A (en) * | 2008-06-12 | 2011-06-08 | 桑迪士克公司 | Nonvolatile memory and method for correlated multiple pass programming |
| CN102203874A (en) * | 2008-10-24 | 2011-09-28 | 桑迪士克股份有限公司 | Programming non-volatile memory with high resolution variable initial programming pulse |
| CN103390424A (en) * | 2012-05-08 | 2013-11-13 | 北京兆易创新科技股份有限公司 | Erasing/programming method and device of memory |
| CN104272393A (en) * | 2012-04-13 | 2015-01-07 | 桑迪士克科技股份有限公司 | System and method of adjusting a programming step size for a block of a memory |
| CN105051824A (en) * | 2012-10-25 | 2015-11-11 | 桑迪士克技术有限公司 | Dynamic bit line bias for programming non-volatile memory |
| CN107025943A (en) * | 2015-10-30 | 2017-08-08 | 爱思开海力士有限公司 | The adaptation scheme that incremental step pulse for flash memory is programmed |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7688638B2 (en) * | 2007-12-07 | 2010-03-30 | Sandisk Corporation | Faster programming of multi-level non-volatile storage through reduced verify operations |
| US8971128B2 (en) * | 2013-01-31 | 2015-03-03 | Sandisk Technologies Inc. | Adaptive initial program voltage for non-volatile memory |
-
2018
- 2018-06-25 CN CN201810661673.XA patent/CN110634527B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101421796A (en) * | 2006-03-28 | 2009-04-29 | 桑迪士克股份有限公司 | Program time adjustment as function of program voltage for improved programming speed |
| CN101584003A (en) * | 2006-10-10 | 2009-11-18 | 桑迪士克股份有限公司 | Variable program voltage increment values in non-volatile memory program operations |
| CN102089827A (en) * | 2008-06-12 | 2011-06-08 | 桑迪士克公司 | Nonvolatile memory and method for correlated multiple pass programming |
| CN102203874A (en) * | 2008-10-24 | 2011-09-28 | 桑迪士克股份有限公司 | Programming non-volatile memory with high resolution variable initial programming pulse |
| CN104272393A (en) * | 2012-04-13 | 2015-01-07 | 桑迪士克科技股份有限公司 | System and method of adjusting a programming step size for a block of a memory |
| CN103390424A (en) * | 2012-05-08 | 2013-11-13 | 北京兆易创新科技股份有限公司 | Erasing/programming method and device of memory |
| CN105051824A (en) * | 2012-10-25 | 2015-11-11 | 桑迪士克技术有限公司 | Dynamic bit line bias for programming non-volatile memory |
| CN107025943A (en) * | 2015-10-30 | 2017-08-08 | 爱思开海力士有限公司 | The adaptation scheme that incremental step pulse for flash memory is programmed |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110634527A (en) | 2019-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8213236B1 (en) | Flash memory | |
| CN108039190B (en) | Test method and device | |
| CN109145981B (en) | Deep learning automatic model training method and equipment | |
| US10217515B2 (en) | Programming memory devices | |
| CN110634527B (en) | Nonvolatile memory processing method and device | |
| CN110634521B (en) | Nonvolatile memory processing method and device | |
| CN110634525B (en) | Nonvolatile memory processing method and device | |
| CN111951860B (en) | Nonvolatile memory write processing method and device | |
| CN111651950A (en) | Cross-clock-domain timing constraint file generation method, device and medium | |
| CN110634526A (en) | Nonvolatile memory processing method and device | |
| CN111951869B (en) | Nonvolatile memory read processing method and device | |
| CN111367464B (en) | Storage space management method and device | |
| CN108958658B (en) | Target data acquisition method and device | |
| CN111951865B (en) | Nonvolatile memory read processing method and device | |
| CN111951862A (en) | Nonvolatile memory erasing processing method and device | |
| CN111367463B (en) | Storage space management method and device | |
| CN110908632A (en) | Information processing method and device | |
| CN111951852A (en) | Nonvolatile memory processing method and device | |
| CN110718255B (en) | Nonvolatile memory processing method and device | |
| CN110634524A (en) | Nonvolatile memory erasing method and device | |
| CN117476083A (en) | Method for determining data reading time length, testing method, device and storage medium | |
| CN111367462B (en) | Data processing method and device | |
| CN110634522A (en) | Nonvolatile memory erasing method and device | |
| CN110634519B (en) | Nonvolatile memory processing method and device | |
| CN111951854A (en) | Nonvolatile memory write processing method and device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Room 604, block B, Tengfei innovation center, No.38, Gaoxin 6th Road, high tech Zone, Xi'an City, Shaanxi Province, 710075 Patentee after: XI'AN GEYI ANCHUANG INTEGRATED CIRCUIT Co.,Ltd. Patentee after: SHANGHAI GEYI ELECTRONIC Co.,Ltd. Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: Room 604, block B, Tengfei innovation center, No.38, Gaoxin 6th Road, high tech Zone, Xi'an City, Shaanxi Province, 710075 Patentee before: XI'AN GEYI ANCHUANG INTEGRATED CIRCUIT Co.,Ltd. Patentee before: SHANGHAI GEYI ELECTRONIC Co.,Ltd. Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |