CN110612602A - 浮动晶片夹盘 - Google Patents

浮动晶片夹盘 Download PDF

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CN110612602A
CN110612602A CN201880029392.0A CN201880029392A CN110612602A CN 110612602 A CN110612602 A CN 110612602A CN 201880029392 A CN201880029392 A CN 201880029392A CN 110612602 A CN110612602 A CN 110612602A
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wafer
chuck
edge
bend
grippers
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CN110612602B (zh
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A·巴朗
V·维尚
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KLA Corp
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KLA Tencor Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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Abstract

边缘夹持器安置在夹盘的外边缘周围。所述边缘夹持器中的每一者包含：指形件，其经配置以围绕一点枢转；接触垫，其经配置以接触所述晶片；以及弯曲部，其安置于所述接触垫与所述指形件之间。所述弯曲部经配置以朝向和远离所述夹盘而弯曲。所述夹盘可使用设计成使晶片保持浮动在所述夹盘上方的真空和压力喷嘴矩阵。所述边缘夹持器可在边缘固持所述晶片，同时最小化所述晶片的变形，或不影响所述晶片的z抖动。

Description

浮动晶片夹盘
相关申请案的交叉参考
本申请案要求2017年5月12日提交且被指派为第62/505,248号美国申请案的临时专利申请案的优先权，所述美国申请案的公开内容特此以引用的方式并入本文中。
技术领域
本公开涉及晶片处置。
背景技术
制造半导体装置，例如逻辑和存储器装置，通常包含使用大量半导体制造工艺来处理如半导体晶片等衬底，以形成半导体装置的各种特征和多个层级。举例来说，光刻是涉及将图案从光罩转印到布置于半导体晶片上的光致抗蚀剂的半导体制造工艺。半导体制造工艺的额外实例包含(但不限于)化学机械抛光(CMP)、蚀刻、沉积和离子植入。可在单个半导体晶片上的布置中制造多个半导体装置，并且接着分成个别半导体装置。
在半导体制造期间，可检查晶片的两侧。为了检查晶片的后侧，通常固持晶片，使得其不损坏或污染将制作装置的晶片的顶部表面。可使用具有边缘夹持器的非接触式夹盘来在后侧检查期间固持晶片。正接受检查的背侧表面需要在光学系统的视野下保持平坦。对晶片表面的允许斜率的限制可较严格，例如大约为100μrad。
各种力促成了晶片表面的不合意倾斜。这些力包含归因于重力的变形、预先存在晶片翘曲，以及边缘夹持器所导致的力。此类力可加重在夹紧之前已经翘曲的晶片的倾斜。因此，边缘夹持器可通过使晶片倾斜恶化来不利地影响晶片的后侧的检查。在晶片自旋期间，边缘夹持器可更加加重这些问题。此外，不同翹曲的晶片无法可靠地平化。无法使用先前技术来使更复杂的翘曲形状平化。因此，需要用于固持晶片的改进的夹盘。
发明内容
在第一实施例中，提供一种设备。所述设备包括夹盘和多个边缘夹持器。所述夹盘具有表面，所述表面具有多个气流开口，其经配置以提供气流。所述夹盘的表面在垂直于垂直方向的平面内。边缘夹持器安置在所述夹盘的外边缘周围。边缘夹持器中的每一者包含：指形件，其经配置以围绕一点枢转；接触垫，其经配置以接触晶片；以及弯曲部，其安置于所述接触垫与所述指形件之间。所述弯曲部经配置以在垂直方向上朝向和远离所述夹盘而弯曲。致动器连接到所述边缘夹持器中的至少一者。在一种情况下，所述边缘夹持器中的三个安置在所述夹盘的外边缘周围。
边缘夹持器可经配置以防止晶片在垂直于垂直方向的方向上旋转。举例来说，夹盘可经配置以使晶片自旋至多达6,000rpm。
所述致动器可为磁性驱动器，其经配置以致使指形件围绕所述点枢转。
所述接触垫可由全氟橡胶或聚醚醚酮制成。
在一种情况下，边缘夹持器中的一者经配置以推挤边缘夹持器中的其余一者。
接触垫可具有安置于晶片上的平面表面。
边缘夹持器可均匀地安置在夹盘的外边缘周围。
所述指形件可由铝、塑料或钢制成。弯曲部可由铝、钢或硬塑料制成。
所述边缘夹持器中的每一者可包含弹簧。所述弹簧可经配置以平行于夹盘的表面将力提供给接触垫。
夹盘可界定多个凹进部分。边缘夹持器中的一者可安置于所述凹进部分中的每一者中。
在第二实施例中，提供一种方法。晶片浮动在夹盘上方，在夹盘的表面与晶片之间的空气-真空膜上。所述夹盘的表面在垂直于垂直方向的平面内。多个边缘夹持器与晶片接触。边缘夹持器中的每一者包含：指形件，其经配置以围绕一点枢转；接触垫，其经配置以接触晶片；以及弯曲部，其安置于所述接触垫与所述指形件之间。所述弯曲部经配置以在垂直方向上朝向和远离所述夹盘而弯曲。晶片可使用夹盘以至多达6,000rpm的速率自旋。
在一种情况下，边缘夹持器中的仅一者可推动晶片抵靠边缘夹持器中的其余一者。在另一情况下，可致动所有的边缘夹持器来推动晶片。
附图说明
为了更全面地理解本公开的本质和目的，应参考以下结合附图的详细描述，其中：
图1是根据本公开的边缘夹持器的透视图；
图2是图1的实施例的横截面图；
图3是具有边缘夹持器的示范性浮动晶片夹盘的透视图；
图4是根据本公开的系统的实施例的框图；以及
图5是根据本公开的方法的实施例的流程图。
具体实施方式
尽管将根据某些实施例描述所主张的标的物，但其它实施例，包含并非提供本文所陈述的所有益处和特征的实施例，也在本公开的范围内。在不脱离本公开的范围的情况下，可进行各种结构、逻辑、处理步骤和电子更改。因此，仅通过参考所附权利要求书来限定本公开的范围。
本文所公开的夹盘的实施例使用真空和压力喷嘴矩阵，其设计成使晶片保持以低抖动在夹盘上方几微米浮动(例如悬停)。包含具有弯曲部的多个边缘夹持器的边缘夹持系统附接到夹盘。边缘夹持器可固持晶片边缘，同时最小化晶片的变形，或不影响晶片的z抖动。
图1是边缘夹持器100的透视图，且图2是图1的实施例的横截面图。边缘夹持器100与夹盘101连接。夹盘101可具有流开口(未示出)，其经配置以提供气流。流开口可位于夹盘101的表面中。夹盘101的表面可在垂直于垂直方向(例如Z方向)的平面内。晶片102，例如300mm晶片，位于夹盘101上方。晶片102可由边缘夹持器100固持，且使用气流浮动在夹盘101上方。
夹盘101可类似于空气轴承工作，且可归因于晶片102与夹盘101之间薄(例如大约5-30μm)刚性空气-真空膜的存在，使夹盘101上的非平坦晶片平化。夹盘101的表面不触摸晶片，因此对晶片102的表面损坏不是问题。
如图1中所见，边缘夹持器100位于夹盘101的凹进部分108中。此凹进部分108的容积可配置为不极度影响夹盘101的表面积以及用于可用气流的空间。然而，此凹进部分108的容积还可经配置以实现夹盘101与边缘夹持器100之间的可接受连接。
边缘夹持器100包含指形件103，其经配置以相对主体104内部的点枢转。举例来说，指形件103可围绕插销107枢转。指形件103可由任何合适的材料，例如铝、塑料、钢或其它金属制成。枢转销衬套110可用以将指形件103附接到主体104，所述主体附接到夹盘101。指形件103可具有从大约3mm到10mm的宽度尺寸(例如Y方向)，但也可使用较大的指形件103。
边缘夹持器100还包含接触垫105，其经配置以接触晶片102。接触垫105可由全氟橡胶(例如由杜邦制造的)、聚醚醚酮(PEEK)，或减少晶片102的污染(例如颗粒所导致的污染)的另一种材料制成。可将接触垫105加工为指形件103或弯曲部106的一部分。接触垫105还可使用粘合剂或扣件附接到指形件103或弯曲部106。
弯曲部106可安置于接触垫105与指形件103之间。弯曲部106可经配置以(例如沿Z轴)朝向和远离夹盘101而弯曲。举例来说，这可平行于从气流开口出来的气流。软弯曲部106可最小化或防止晶片102的垂直(Z轴)变形。弯曲部106的几何形状可经配置以在Z方向上为变形提供低刚度。弯曲部106可由可精确加工的任何材料制成，例如铝、钢、硬塑料或其它金属。
接触垫105或接触垫105与弯曲部106结合可提供充足的固持力，使得晶片102可快速自旋而不滑动。图2所示的弹簧109可确保有足够的水平力施加在晶片102的边缘上，以固持晶片102。在一种情况下，弹簧109可经配置以平行于夹盘表面将力提供到接触垫105。归因于此夹持力而可用的摩擦力可确保当晶片自旋开始或停止时，晶片102不滑动。
虽然示出为平面的，但接触垫105也可为锯齿状或具有其它形状来在特定应用期间夹持晶片102。举例来说，接触垫105可为v形。此外，其它弯曲部106设计是可能的。举例来说，接触垫105可触摸晶片102的顶部和底部表面，或在晶片边缘成一角度。接触垫105或弯曲部106的各种设计可安全地固持晶片102，而不在Z方向上施加过多的力。
弯曲部106和/或指形件103可较薄。因此，弯曲部106和/或指形件103的面积在X方向或Y方向上可最小化。归因于光学元件的存在，晶片102上方可存在受限的余裕空间。
致动器可连接到边缘夹持器。此致动器可位于主体104内部。举例来说，磁性驱动器可位于主体104内部。
边缘夹持器100可在晶片处理期间提供益处。晶片102的抖动可减少或保持较低，例如低于50nm。可阻止晶片102相对于夹盘101旋转或移动。如果晶片102不平坦，那么其可由夹盘101和边缘夹持器100平化，因为晶片102与夹盘101之间的空气-真空膜可具有高刚度。除潜在地将晶片102固持在适当的位置之外，可通过使用边缘夹持器100来减少或消除晶片102上的垂直力(即，在Z方向上)。
图3是具有边缘夹持器100的示范性浮动晶片夹盘101的透视图。虽然说明边缘夹持器100，但可使用其它边缘夹持器设计。
图3中说明三个边缘夹持器100，但其它数目的边缘夹持器是可能的。举例来说，可使用超过三个边缘夹持器100。在一种情况下，可使用三个与六个之间的边缘夹持器100。边缘夹持器100可或可不均匀地分布在晶片的外周周围。
如图3中所见，夹盘101包含多个流开口300，其经配置以提供气流。流开口300形成于夹盘100的表面301中，且可与气体(例如清洁干燥空气)源和/或真空源流体连通。夹盘101的表面301可在垂直于垂直方向(例如图2中的Z方向)的平面内。具有流开口的夹盘的实例在以引用的方式并入的第7,607,647号美国专利中找到。夹盘101的内部可包含沟道曲径，所述沟道在夹盘101的表面301上递送真空和加压空气。表面301中的流开口300可提供晶片102下面的加压空气和真空的均匀分布。形成于表面301与晶片102之间的空气-真空膜可为刚性、稳定的，且具有均匀厚度。
结合边缘夹持器100使用有气流经过流开口300的夹盘100可使晶片102能够被夹住来进行晶片检查应用，包含需要低晶片抖动的那些应用。
每一边缘夹持器100可以少量的水平力来推动晶片102。边缘夹持器100和接触垫中的弯曲部构造可在晶片102上提供较小或零垂直力，从而在边缘夹持器100附近产生晶片102的忽略的倾斜。
可使边缘夹持器100的弯曲部、接触垫和/或指形件的宽度(在X-Y平面内)最小化，使得边缘夹持器100在检查期间不会覆盖晶片102的表面。
在一实施例中，三个边缘夹持器100中的两个可位于停止或锁定位置。三个边缘夹持器100中的第三个可推动晶片102抵靠停止或锁定的另外两个边缘夹持器102。边缘夹持器100可施加足够的力，使得可固定晶片来自旋。在一实例中，水平力的值将大约为0.1lbf到10lbf。
在另一实施例中，致动所有的边缘夹持器100来推动晶片102。边缘夹持器100的操作可为同时的，但也可为循序的。在一实例中，水平力的值将大约为0.1lbf到10lbf。
边缘夹持器100和夹盘101的使用可提供充足的固持力，使得晶片102可以例如从100到6,000rpm的速率(例如围绕Z轴)自旋。使用电动机来使夹盘101自旋，且由于边缘夹持器100固持晶片102，因此晶片102可随夹盘101自旋，两者之间无任何相对滑动。
边缘夹持器100和夹盘101的使用还意味着晶片102在垂直方向(Z方向)上并不过度变形，且不被与晶片102接触的组件污染。
在一种情况下，晶片102浮在夹盘101的表面301上方，在从5μm到30μm(例如从7μm到30μm)的高度(Z方向)。其它高度是可能的。高度可取决于压力和真空度。
图4是系统500的实施例的框图。系统500包含夹盘101，其经配置以固持晶片102或其它工件。夹盘101可经配置以在一个、两个或三个轴线上移动或旋转。夹盘101还可经配置以例如围绕Z轴自旋。虽然未说明，但夹盘101可包含边缘夹持器，例如图1-2的边缘夹持器。因此，夹盘101可为(例如)图3中说明的夹盘101。
系统500还包含测量系统501，其经配置以测量晶片102的表面。测量系统501可产生光束、电子束、宽带等离子体，或可使用其它技术来测量晶片102的表面。
系统500与控制器502通信。举例来说，控制器502可与测量系统501或系统500的其它组件通信。控制器502可包含处理器503、与处理器503电子通信的电子数据存储单元504，以及与处理器503电子通信的通信端口505。应了解，控制器502可实际由硬件、软件和固件的任何组合来实施。并且，如本文所描述的其功能可由一个单元执行，或在不同组件之间划分，所述组件中的每一个又可通过硬件、软件和固件的任何组合来实施。控制器502用来实施各种方法和功能的程序代码或指令可存储在控制器可读存储媒体中，例如电子数据存储单元504中、控制器502内、控制器502外部或其组合的存储器。
控制器502可以任何合适方式(例如经由一或多个传输媒体，其可包含“有线”和/或“无线”传输媒体)耦合到系统500的组件，使得控制器502可接收系统500所产生的输出，例如来自测量系统501的输出。控制器502可经配置以使用所述输出来执行若干功能。举例来说，控制器502可经配置以执行对晶片102的后侧的检查。在另一实例中，控制器502可经配置以将所述输出发送到电子数据存储单元504或另一存储媒体，而不对所述输出执行缺陷复查。控制器502可进一步如本文所述配置。
本文所描述的控制器502、其它系统或其它子系统可采用各种形式，包含个人计算机系统、图像计算机、主机计算机系统、工作站、网络器具、因特网器具或其它装置。一般来说，术语“控制器”可广泛地定义为涵盖具有执行来自存储媒体的指令的一或多个处理器的任何装置。子系统或系统还可包含此项技术中已知的任何合适的处理器，例如并行处理器。另外，子系统或系统可包含具有高速处理和软件的平台，作为独立或连网工具。
如果系统包含多于一个子系统，那么不同子系统可彼此耦合，使得图像、数据、信息、指令等可在子系统之间发送。举例来说，一个子系统可通过任何合适的传输媒体耦合到额外子系统，所述传输媒体可包含此项技术中已知的任何合适的有线和/或无线传输媒体。此类子系统中的两个或更多个也可通过共享的计算机可读存储媒体(未图示)有效地耦合。
控制器502可根据本文所描述的任一实施例来配置。举例来说，控制器502可经编程以执行图5的步骤中的一些或全部。
系统500可为缺陷审查系统、检查系统、计量系统或某一其它类型的系统。因此，本文所公开的实施例描述可以若干方式为具有或多或少适合于不同应用的不同能力的系统定制的一些配置。
图5是方法的实施例的流程图。在600，晶片浮动在夹盘上方，在夹盘的表面与晶片之间的空气-真空膜上。空气-真空膜可由夹盘产生。多个边缘夹持器与晶片接触。举例来说，边缘夹持器可为图1-2的边缘夹持器。在一种情况下，致动边缘夹持器中的仅一者来推动晶片抵靠所述边缘夹持器中的其余一者。在另一情况下，致动所有的边缘夹持器来推动晶片。晶片可使用夹盘以至多达6,000rpm的速率自旋。
在一种情况下，可通过晶片处置装置将晶片降低到空气-真空膜上，且接着在晶片浮动在夹盘上方之后，致动边缘夹持器。在另一情况下，可通过晶片处置装置降低晶片，且致动边缘夹持器来推动晶片。接着，通过夹盘产生空气-真空膜。
如贯穿本公开所使用，“晶片”可指由半导体或非半导体材料形成的衬底。举例来说，半导体或非半导体材料可包含(但不限于)单晶硅、砷化镓或磷化铟。晶片可包含一或多个层。举例来说，此类层可包含(但不限于)光致抗蚀剂、电介质材料、导电材料或半导电材料。许多不同类型的此类层是此项技术中已知的，例如(但不限于)隔离层、植入层等。如本文所使用的术语“晶片”既定包含上面可形成此类层中的任一者的衬底。
所述方法的步骤中的每一者可如本文中所描述执行。所述方法还可包含可由本文所述的控制器和/或计算机子系统或系统执行的任何其它步骤。所述步骤可由可根据本文所描述的任一实施例配置的一或多个计算机系统执行。另外，上文所描述的方法可由本文所述的系统实施例中的任一者执行。
尽管已经关于一或多个特定实施例描述了本发明，但应理解，可在不脱离本发明的范围的情况下形成本发明的其它实施例。因此，将本公开视为仅受所附权利要求书及其合理解释限制。

Claims (17)

1.一种设备，其包括：
夹盘，其具有带多个气流开口的表面，所述气流开口经配置以提供气流，其中所述夹盘的所述表面在垂直于垂直方向的平面内；
多个边缘夹持器，其安置在所述夹盘的外边缘周围，其中所述边缘夹持器中的每一者包含：
指形件，其经配置以围绕一点枢转；
接触垫，其经配置以接触晶片；以及
弯曲部，其安置于所述接触垫与所述指形件之间，其中所述弯曲部经配置以在所述垂直方向上朝向和远离所述夹盘弯曲；以及
致动器，其连接到所述边缘夹持器中的至少一者。
2.根据权利要求1所述的设备，其中所述边缘夹持器经配置以防止所述晶片在垂直于所述垂直方向的方向上旋转。
3.根据权利要求2所述的设备，其中所述夹盘经配置以使所述晶片以至多达6,000rpm自旋。
4.根据权利要求1所述的设备，其中所述致动器是磁性驱动器，其经配置以致使所述指形件围绕所述点枢转。
5.根据权利要求1所述的设备，其中所述接触垫由全氟橡胶或聚醚醚酮制成。
6.根据权利要求1所述的设备，其中所述边缘夹持器中的三个安置在所述夹盘的所述外边缘周围。
7.根据权利要求1所述的设备，其中所述边缘夹持器中的一者经配置以推挤所述边缘夹持器中的其余一者。
8.根据权利要求1所述的设备，其中所述接触垫具有安置于所述晶片上的平面表面。
9.根据权利要求1所述的设备，其中所述多个边缘夹持器均匀地安置在所述夹盘的所述外边缘周围。
10.根据权利要求1所述的设备，其中所述指形件由铝、塑料或钢制成。
11.根据权利要求1所述的设备，其中所述弯曲部由铝、钢或硬塑料制成。
12.根据权利要求1所述的设备，其中所述边缘夹持器中的每一者进一步包含弹簧，且其中所述弹簧经配置以平行于所述夹盘的所述表面将力提供给所述接触垫。
13.根据权利要求1所述的设备，其中所述夹盘界定多个凹进部分，且其中所述边缘夹持器中的一者安置于所述凹进部分中的每一者中。
14.一种方法，其包括：
使晶片浮动在夹盘上方，在所述夹盘的表面与所述晶片之间的空气-真空膜上，其中所述夹盘的所述表面在垂直于垂直方向的平面内；以及
使所述晶片与多个边缘夹持器接触，其中所述边缘夹持器中的每一者包含：
指形件，其经配置以围绕一点枢转；
接触垫，其经配置以接触晶片；以及
弯曲部，其安置于所述接触垫与所述指形件之间，其中所述弯曲部经配置以在所述垂直方向上朝向和远离所述夹盘弯曲。
15.根据权利要求14所述的方法，其进一步包括致动所述边缘夹持器中的仅一者来推动所述晶片抵靠所述边缘夹持器中的其余一者。
16.根据权利要求14所述的方法，其进一步包括致动所有的所述边缘夹持器来推动所述晶片。
17.根据权利要求14所述的方法，其进一步包括使用所述夹盘来使所述晶片以至多达6,000rpm的速率自旋。
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CN111725129A (zh) * 2020-06-29 2020-09-29 北京北方华创微电子装备有限公司 晶圆承载装置及半导体工艺设备
CN111725129B (zh) * 2020-06-29 2023-02-14 北京北方华创微电子装备有限公司 晶圆承载装置及半导体工艺设备

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