CN1105927C - Fabrication method for uniform planar optical waveguide - Google Patents

Fabrication method for uniform planar optical waveguide Download PDF

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Publication number
CN1105927C
CN1105927C CN98103201A CN98103201A CN1105927C CN 1105927 C CN1105927 C CN 1105927C CN 98103201 A CN98103201 A CN 98103201A CN 98103201 A CN98103201 A CN 98103201A CN 1105927 C CN1105927 C CN 1105927C
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chemical vapor
vapor deposition
optical waveguide
deposition
group
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Expired - Fee Related
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CN98103201A
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CN1205444A (en
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郑善太
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/10—Wire waveguides, i.e. with a single solid longitudinal conductor

Abstract

A uniform planar optical waveguide is made by (a) depositing a lower cladding layer 402 on a substrate 400 and polishing the deposited surface; (b) depositing a core layer on the resultant structure of the step (a) and polishing the deposited surface; (c) patterning the core layer whose surface is polished in the step (b), to generate an optical waveguide; and (d) depositing an upper cladding layer on the optical waveguide formed through the patterning of the step (c). Since it further includes surface polishing step, waveguide thickness uniformity is improved. As a result, the effective reflective index in the waveguide is uniform and more precise optical elements can be manufactured. The phase difference at each channel matches the intended value, thereby decreasing crosstalk.

Description

The manufacture method of uniform planar optical waveguide
The present invention relates to the manufacture method of uniform planar optical waveguide, more particularly, relate to by polishing the method for making uniform planar optical waveguide after the deposition.
In making the integrated optics method of optical communication device, for large-scale production and remedy its weakness, developed out-of-plane optical waveguide loop.Figure 1A to 1C represents to make the classic method of planar optical waveguide.The step that Figure 1A represents is deposition one under-clad layer 102 and a sandwich layer 104 on substrate 100.The step that Figure 1B represents is made waveguide 106 then for composition on the sandwich layer 104 of Figure 1A.The step that Fig. 1 C represents is deposition one top covering 108 in the waveguide of Figure 1B.
Fig. 1 D is the process flow diagram of detail display by the manufacture method shown in Figure 1A to 1C.At first, in step 112, deposition under-clad layer and sandwich layer.Deposit with the rotation painting method for depositing, and inorganic material is with chemical vapor deposition (CVD) method, improvement CVD method or flame hydrolysis deposition (FHD) method deposition such as organic materials such as polymkeric substance.Herein, according to used deposition process and condition thereof, the thickness of layer is different.According to the rotation painting method, after synthetic organic material, adjust the concentration and the viscosity of this organic material by adding set solvent, this potpourri is injected the rotation coater, make the organic film of several micron thickness then by this rotation coater of high speed rotating.In the CVD method, in reacting furnace, inject, and provide energy so that on substrate, form rete to reacting furnace as the source gas for the treatment of the sedimentary deposit material.Improve the CVD method and comprise low pressure chemical vapor deposition (LPCVD), atmospheric pressure cvd (APCVD), and plasma enhanced CVD (PECVD).In the FHD method, reacting gas and hydrogen and oxygen flame are synthetic, form thin ash, then with thin ash deposition on substrate.For each deposition process, mainly adopt silicon chip as substrate.Yet, also can adopt by quartzy, aluminium oxide (Al 2O 3), gallium arsenide (GaAs), indium phosphide (InP) or belong to the substrate that the semiconducting compound of III and V group element is made in the periodic table of elements.
Indoor shop drawings line in cleaning.With depositing the wafer washing and the drying of rete on it, carry out photoresists (PR) rotation in step 116 and apply.Here, between step 112 and 116, can in step 114, deposit a metal mask according to etching condition.After PR rotation applies, with the resulting structures baking,, and utilize ultraviolet (UV) radiation exposure on it so that the sclerosis of PR figure line utilizes mask aligner that the design drawing line is transferred on the wafer in step 120 in step 118.After irradiation ultraviolet radiation forms the figure line, utilize developer solution to remove unreacted PR in step 122, do quarter at step 124 pair exposed sandwich layer then.Here, etching is undertaken by inductively coupled plasma method or method for reactive ion beam etching.After etching, remove material (PR or metal film) (being called the removal etching) in step 126, and carry out after annealing in step 128 with mapping line mask.Then, form top covering in step 130 by deposition.After finishing the above-mentioned steps of in wafer cell, carrying out, wafer is cut into device cell, and the device that acquisition is finished through packaging step.
As mentioned above, in the classic method of making planar optical waveguide, depositing of thin film is triplicate basically.Yet,, need the deposition more than three times for making multilayer device.Here, even film deposition conditions the best, the thickness of rete is uniform in the 2-3% thickness range.If uneven film thickness is even, then the thickness of the optical waveguide that is formed by this rete is also inhomogeneous, thereby causes uneven device property.Fig. 2 A is the vertical cross-section diagram with optical waveguide of off-gauge, and Fig. 2 B is the side view that has the optical waveguide of off-gauge shown in Fig. 2 A.Here, label 200 is represented substrate, and label 202 is represented sandwich layer, and label 204 is represented covering, and d represents the thickness of optical waveguide, and W represents the width of optical waveguide, and 1 represents the length of optical waveguide.The device of above-mentioned off-gauge presents following effect.For example, arrange good waveguide demultiplexer (AWG DEMUX) and will import mixed wavelengths that the light letter leads and separate and individual wavelengths is distributed in interchannel for one.Here, the phase difference φ of each channel should be defined as a set interval, and supposes that Δ L is a path length difference, and β is the conduction refractive index of wavelength, and then phase differential can be represented by equation DELTA φ=Δ L β.The conduction refractive index of waveguide is by equality beta=K ODsin θ represents, wherein K OBe wave number, d is the thickness of waveguide, and θ is an incident angle.Here, if waveguide is not same, its thickness d changes in the communication process of light, and then light signal can not be separated into required specific wavelength at each channel terminal, has increased cross-talk, and this causes serious problems during fabrication.
This problem and may take place in AWG DEMUX in adopting the device of optical waveguide.If the error that this problem causes is in allowed band, then device still can use.Yet, under situation, need carry out more accurate control to light signal with sandwich construction device, this just needs a kind of more accurate optical waveguide.
For addressing the above problem, the object of the invention is to provide a kind of method of making planar optical waveguide, it comprises a surface finish step, be used to remove and have last under-clad layer that 2-3% thickness departs from and the out-of-flatness on the core layer thickness, thereby reduce the thickness difference of rete to greatest extent and improve the flatness on surface.
Correspondingly, for achieving the above object, provide a kind of method of making uniform planar optical waveguide, comprised the steps: that (a) deposits a under-clad layer and polish deposition surface on substrate; (b) deposition one sandwich layer and polish this deposition surface on step (a) resulting structures; (c) in step (b), carry out composition on the sandwich layer of its surface finish, to produce an optical waveguide; And (d) deposition one top covering on the optical waveguide that forms through step (c) composition.
By the reference accompanying drawing its preferred embodiment is elaborated, will knows above-mentioned purpose of the present invention and advantage more.
Figure 1A to 1C represents to make the vertical cross-section diagram of the classic method of planar optical waveguide;
Fig. 1 D is the process flow diagram that the classic method of planar optical waveguide is made in expression in detail;
Fig. 2 A is the vertical cross-section diagram with optical waveguide of off-gauge;
The side view of Fig. 2 B for having the optical waveguide of off-gauge shown in Fig. 2 A;
The process flow diagram of method that Fig. 3 has the planar optical waveguide of uniform thickness for expression manufacturing according to the present invention; And
Fig. 4 A to 4C is the sectional view of presentation surface polishing step.
With reference to Fig. 3, a kind of method of making planar optical waveguide, comprise the step 300 that deposits under-clad layer, the step 310 of polishing first surface, the step 320 of deposition sandwich layer, the step 330 of polishing second surface, the step 340 of composition, the step 350 of deposition top covering, and the step 360 of polishing the 3rd surface.
In the step 330,320 and 350 of deposition top covering, sandwich layer and under-clad layer, can adopt rotation coating, chemical vapor deposition (VCD), low pressure chemical vapor deposition (LPCVD), plasma enhanced CVD (PECVD), atmospheric pressure cvd (APCVD) or flame hydrolysis deposition (FHD) method.And substrate can be by silicon, quartz, aluminium oxide (Al 2O 3), gallium arsenide (GaAs), indium phosphide (InP) or belong in the periodic table of elements semiconducting compound of III and V group element and make.
The the first, the second and the 3rd surface finish step 310,330 and 360 is used to increase this surface planarity.Surface polishing method comprises mechanical polishing method and chemically polishing method.In mechanical polishing method, greater than the material of polished surface material hardness physical erase is carried out on the surface by hardness.In chemically polishing method, by little by little dissolving is surperficial with the polished surface chemical reaction.And, also can adopt cmp method as above-mentioned two kinds of method combinations.In cmp method, the chemical reaction by polished surface and chemical agent changes character of surface, can improve mechanical buffing efficient.This method is mainly used in the semiconductor fabrication process that might need the precision surface polishing and utilizes in the batch process of wafer.Fig. 4 A to 4C represents above-mentioned chemical mechanical polishing method.In detail, Fig. 4 A has drawn one and has not polished deposition surface, and wherein label 400 is represented substrate and label 402 is represented sedimentary deposit.Fig. 4 B represents to adopt the cmp method of polishing appliance 404, wherein polish mediator by " zero " expression and chemical agent by " ● ".Even level and smooth surface after Fig. 4 C represents to polish.
For example, under the situation of silicon dioxide optical waveguide, polished target is by containing silicon dioxide (SiO 2) make as the boron phosphorus quartz glass (BPSG) of Main Ingredients and Appearance, correspondingly, the character of surface of object is adopting such as SiO 2Particle and contain alkali and (OH) for example can change during the polishing mediators such as ceramic particle of KOH.The character of surface of rete changes by chemical equation, thereby has improved mechanical buffing efficient.
In the method for manufacturing uniform planar optical waveguide of the present invention,, carry out surface finish as stated above in step 310 then at step 300 deposition one under-clad layer.Then, on it, deposit sandwich layer, carry out surface finish once more in step 330 in step 320.After finishing sandwich layer deposition and surface finish, carry out composition in step 340.
Describe pattern step 340 below in detail, after clean wafers, carry out photoresists (PR) rotation in step 342 and apply.Before step 342, can deposit a metal mask according to etching condition in step 341.After the PR rotation applies, toast so that the sclerosis of PR figure line in step 343, layout is transferred on the PR by alignment mask in step 344 then, and on it irradiation ultraviolet (UV) ray, after forming the figure line by the UV radiation exposure, develop by it is immersed in the set solution in step 345, pass through plasma etching method in step 346 then, for example inductively coupled plasma method or method for reactive ion beam etching are done quarter to exposed sandwich layer, after etching is finished, to remove with the material (PR or metal film) of mapping line mask in step 347, and carry out after annealing in step 348 then, thereby finish pattern step.
After composition, form top covering in step 350 by deposition, and carry out surface finish once more in step 360.
After finishing above-mentioned steps, can be by repeating the device that above-mentioned steps makes sandwich construction.
Under the situation of the single mode SiO 2 waveguide that passes through above-mentioned polishing, the thickness deviation of optical waveguide is reduced to 500 dusts with interior scope.Because the about 8 μ m of the core layer thickness of single mode silicon dioxide optical waveguide, so its thickness deviation is about 0.6%, to compare with traditional deviation of 2-3%, this is 3-5 improvement doubly.Under the situation of multimode waveguide, the increase of the size of optical waveguide and its thickness deviation are constant, thereby have further reduced its deviation ratio.This optical waveguide manufacture method can be applicable to relate to the device of multi-wavelength, adopts the device of long haul optical transmission or the device of employing multilayer lightguide.
Make in the method for uniform planar optical waveguide in the present invention, further comprise the surface finish step, thereby improving its homogeneity aspect the optical waveguide thickness.Consequently, the effective refractive index in the optical waveguide becomes evenly and can produce accurate optical device.Especially, under the situation of AWG DEMUX, the phase differential of each channel and expectation value coupling, thus reduced cross-talk.

Claims (9)

1, a kind of method of making uniform planar optical waveguide is characterized in that comprising the steps:
(a) on a substrate, deposit under-clad layer, and polish the under-clad layer surface of this deposition;
(b) on step (a) resulting structures, deposit sandwich layer, and polish the core layer surface of this deposition;
(c) its polished sandwich layer in surface in the step (b) is carried out composition, to make optical waveguide; And
(d) on the optical waveguide that forms through step (c) composition, deposit top covering.
2, the method for claim 1, wherein substrate is made by the material that is selected from down group, and this group material comprises silicon, quartz, aluminium oxide (Al 2O 3), gallium arsenide (GaAs), indium phosphide (InP) and belong to the semiconducting compound of III and V group element in the periodic table of elements.
3, the method for claim 1, the step (a) that wherein deposits under-clad layer is undertaken by the method that is selected from down group, and this group of methods comprises rotation coating, chemical vapor deposition, plasma enhanced chemical vapor deposition, low-pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition and flame hydrolysis deposition method.
4, the method for claim 1 is wherein polished by the method that is selected from down group and is undertaken, and this group of methods comprises mechanical buffing, chemical polishing and cmp method.
5, the method for claim 1, the step (b) that wherein deposits sandwich layer is undertaken by the method that is selected from down group, and this group of methods comprises rotation coating, chemical vapor deposition, plasma enhanced chemical vapor deposition, low-pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition and flame hydrolysis deposition method.
6, the method for claim 1, the step (d) that wherein deposits top covering is undertaken by the method that is selected from down group, and this group of methods comprises rotation coating, chemical vapor deposition, plasma enhanced chemical vapor deposition, low-pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition and flame hydrolysis deposition method.
7, the method for claim 1, wherein pattern step (c) step comprises the steps:
(c1) carrying out the photoresists rotation on the sandwich layer of surface finish applies;
(c2) baking procedure (c1) resulting structures is so that the sclerosis of photoresists figure line;
(c3) by alignment mask and on it irradiation ultraviolet radiation, the design drawing line is transferred on the photoresists;
(c4) by being immersed in the set solution photoresists pattern is developed;
(c5) according to the design drawing line step (c4) resulting structures is carried out etching, and remove used figure line mask; And
(c6) step (c5) resulting structures is carried out after annealing.
8, method as claimed in claim 7, wherein pattern step (c) also comprises the step of a plated metal mask on step (c1) coating in surface finish before.
9, method as claimed in claim 7, wherein etching step (c5) is undertaken by plasma-etching method.
CN98103201A 1997-07-15 1998-07-13 Fabrication method for uniform planar optical waveguide Expired - Fee Related CN1105927C (en)

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KR32888/1997 1997-07-15
KR1019970032888A KR100509510B1 (en) 1997-07-15 1997-07-15 Fabrication for uniform planar waveguide
KR32888/97 1997-07-15

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CN1105927C true CN1105927C (en) 2003-04-16

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CN111448501A (en) * 2017-12-15 2020-07-24 株式会社Lg化学 Wearable device

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GB2373343A (en) * 2001-03-16 2002-09-18 Bookham Technology Plc Rib waveguide for connection to an optical component
CN100356216C (en) * 2005-12-29 2007-12-19 天津大学 Method of preparing long period bar wave guide optical grating on optical glass surface
JP2009205112A (en) * 2008-02-29 2009-09-10 Sumitomo Electric Ind Ltd Optical waveguide and method of manufacturing the same
JP6004550B2 (en) * 2012-12-20 2016-10-12 日本碍子株式会社 Seed crystal substrate, composite substrate and functional element

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KR19990010190A (en) 1999-02-05
JPH1172637A (en) 1999-03-16
GB9815126D0 (en) 1998-09-09
KR100509510B1 (en) 2005-10-21
GB2327280A (en) 1999-01-20
JP2902640B2 (en) 1999-06-07
GB2327280B (en) 1999-08-11
CN1205444A (en) 1999-01-20

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