CN110581049B - Plasma system and method for processing edge defects of a substrate - Google Patents
Plasma system and method for processing edge defects of a substrate Download PDFInfo
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- CN110581049B CN110581049B CN201810685888.5A CN201810685888A CN110581049B CN 110581049 B CN110581049 B CN 110581049B CN 201810685888 A CN201810685888 A CN 201810685888A CN 110581049 B CN110581049 B CN 110581049B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32385—Treating the edge of the workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
Abstract
A plasma system and method for processing edge defects of a substrate, the plasma system includes a plasma source and a carrier; the plasma source comprises at least one plasma generating unit; the bearing device is used for conveying at least one substrate to move relative to the plasma source so as to enter and exit a plasma action area; the substrate is provided with a region to be processed, the plasma source provides a plasma beam for the region to be processed in the plasma action region, and the traveling direction of the plasma beam is substantially parallel to the surface of the substrate; moving the substrate into the plasma active region, providing a Thermal gradient (Thermal gradient) heat source and a reactive chemical component to the region to be processed by the plasma source for thermally treating and modifying the edge of the substrate.
Description
Technical Field
The present invention relates to a plasma system and method for processing edge defects of a substrate, and more particularly, to a plasma system and method for removing edge defects of a substrate by using plasma to repair the edge defects of the substrate using a gradient of a plasma heat source and chemical components for edge processing of a flat panel.
Background
The substrate used in various fields of technology has many aspects, including, for example, glass, wafer, ceramic, metal, etc., in terms of material. However, in any material, after cutting, more or less defects, including cracks, irregularities, and burrs, are generated on the edge, and therefore, the defects must be repaired to enhance the strength or quality of the substrate.
Taking a glass substrate as an example, after the substrate is cut, many cracks are generated at the edge, and at present, the large cracks are generally changed into small cracks by edging, but the cracks still exist, even if the cracks are small, when the substrate is bent, the substrate is easy to break from the cracks.
As for the conventional technical means for reinforcing a glass substrate by heating, for example, a display panel, since the area is large, the heating stage must be very large, and the entire substrate must be heated to the melting point of the panel, so that the entire substrate is softened and bent.
In addition, although the method of plasma-strengthening glass is known, the method aims to strengthen the material of the whole glass, and is not aimed at repairing the defects of the edge, but some glass substrates are very difficult to cut after being completely strengthened, and are difficult to process.
Furthermore, the glass substrate is repaired by heating, and the heating source is perpendicular to the surface of the substrate. The method for treating the surface of the substrate causes the temperature difference between the directly heated surface and the opposite bottom surface of the substrate, thereby causing the problems of thermal deformation and breakage caused by stress of the substrate.
Or if the glass substrate is strengthened by chemical agents, the chemical agents change the glass characteristics, and high-content salts are not feasible in some industries (such as the thin film transistor display industry), and the strengthened glass is difficult to cut.
If the edge of the glass substrate is strengthened by a known method, there are four known documents, such as laser, flame gun, adhesive coating and edge grinding, which have the disadvantages of high cost, poor control area precision, large consumption of petrochemical gas, heterogeneous polymer (polymer) heat resistance and process compatibility, and unsatisfactory strength.
Accordingly, a need exists in the art for a "plasma system and method for processing edge defects of a substrate" that can repair edge defects of a substrate to improve the strength of the processed substrate.
Disclosure of Invention
In one embodiment, the present invention provides a plasma system for processing edge defects of a substrate, comprising:
a plasma source including at least one plasma generating unit;
a carrier for transporting at least one substrate relative to the plasma source for movement into and out of a plasma active region;
the substrate is provided with a region to be processed, the plasma source provides a plasma beam to the region to be processed in the plasma action region, and the traveling direction of the plasma beam is substantially parallel to the surface of the substrate.
In another embodiment, the present invention provides a method for processing edge defects of a substrate, comprising:
providing a plasma source, wherein the plasma source comprises at least one plasma generating unit;
arranging a carrying device to convey at least one substrate to move relative to a plasma source, wherein the plasma beam travelling direction of the plasma source is substantially parallel to the surface of the substrate, and the substrate is provided with at least one region to be processed;
the substrate is moved into a plasma active region, where a Thermal gradient heat source and a reactive chemical species are provided to the region to be processed by the plasma source for thermally treating and modifying the edge of the substrate.
Drawings
FIG. 1A is a schematic side view of one embodiment of a plasma processing system for processing edge defects on a substrate according to the present invention, wherein the plasma beam travels in a direction perpendicular to the side edge of the substrate.
FIG. 1B is a schematic side view of another embodiment of a plasma processing system according to the present invention for processing edge defects on a substrate where the direction of travel of the plasma beam is not perpendicular to the side edges of the substrate.
Fig. 2 is a schematic front view of the embodiment in fig. 1A or 1B.
FIG. 3 is a schematic diagram of an elevational view of another embodiment of a plasma system for processing edge defects of a substrate in accordance with the present invention.
FIG. 4 is a schematic diagram illustrating an elevational view of another embodiment of a plasma system for processing edge defects of a substrate in accordance with the present invention.
FIG. 5 is a flowchart illustrating a method for processing edge defects of a substrate according to the present invention.
[ notation ] to show
100. 100A, 100B: plasma system for processing edge defects of a substrate
10. 10A, 10B: plasma source
11. 11A, 11B: plasma generating unit
12. 12A, 12B, 121, 122: plasma beam
20: bearing device
21: chuck plate
22: insulating layer
30. 30A, 30B: substrate board
31. 31A, 31B: skirt edge
32. 33: surface of
200: method flow for processing substrate edge defect
204 to 206: method flow steps for processing substrate edge defects
C1: geometric center
C2: center shaft
D1, D2, P, Q: distance between each other
F1, F1A, F1B: a first direction
F2: second direction
θ: angle of rotation
Detailed Description
Referring to fig. 1A and 2, a plasma system 100 for processing edge defects of a substrate according to the present invention includes a plasma source 10 and a carrier 20.
The plasma source 10 includes a plasma generating unit 11 for providing a plasma beam 12.
The carrier 20 is configured to transport a substrate 30 to move relative to the plasma source 10 into and out of a plasma processing region, as shown in a second direction F2 in FIG. 1A; the plasma active region is also the region of the illustrated plasma beam 12. The carrier 20 has a chuck 21 for holding the substrate 30, and the carrier 20 may be a vacuum chuck for vacuum-chucking the substrate 30. The side of the carrier 20 facing the plasma source 10 is provided with an insulating layer 22.
The substrate 30 may be made of glass, wafer, ceramic, metal, etc. The substrate 30 has a side edge 31 facing the plasma beam 12, the side edge 31 being the region to be treated of the substrate 30, and the plasma source 10 provides the plasma beam 12 to the region to be treated in the plasma active region.
Referring to fig. 1A, the traveling direction (i.e., the first direction F1A) of the plasma beam 12 is substantially perpendicular to the side edge 31 (i.e., the second direction), and referring to fig. 1B, the traveling direction (i.e., the first direction F1B) of the plasma beam 12 and the side edge 31 have an angle θ, the angle θ is greater than 0 degrees and less than 180 degrees, but not 90 degrees, and the angle θ is less than 90 degrees in this embodiment. However, in the embodiment of fig. 1A or fig. 1B, the front view structure is as shown in fig. 2, in other words, the plasma beam 12 of the present invention can be disposed according to the following principle: the direction of the plasma beam 12 is substantially parallel to the surface of the substrate 30 and aligned with the geometric center of the side edge 31, the direction of the plasma source 10 is parallel to the tangential direction of the side edge 31 of the substrate 30 (i.e., the second direction F2 shown in fig. 1A and 1B), and the allowable deviation error is within +/-0.02 cm; the angle θ between the plasma beam 12 and the side edge 31 of the substrate 30 may be in the range of greater than 0 degrees and less than 180 degrees.
Referring to fig. 1A and 2, by the above structure, the extension lines of the central axis C2 of the plasma beam 12 and the geometric center C1 of the side edge 31 of the substrate 30 are maintained in a collinear state, and the distance and the relative movement speed between the plasma beam 12 and the substrate 30 can be controlled, so that the plasma beam 12 contacts the substrate 30 to cause a thermal gradient (thermal gradient), thereby repairing the defect of the side edge 31. For example, the skirt 31 and the plasma source 10 have a distance P therebetween, which may be 0.2 cm to 1.5 cm. The chuck 21 has a spacing Q from the plasma source 10, the spacing Q being greater than the spacing P, and the difference between the spacing Q and the spacing P being greater than 0.3 cm. The moving speed of the substrate 30 with respect to the plasma source 10 is 0.1 cm/sec to 5 cm/sec.
To repair the side edge 31, the plasma generating unit 11 is ignited to generate the plasma beam 12, and then heated to the melting point of the substrate 30, for example, the melting point is about 800 to 1500 ℃ if the substrate 30 is glass; the plasma beam 12 is separated by the edge 31 to form two symmetrical plasma beams 121, 122 (as shown in fig. 2), the edge 31 and the two opposite surfaces 32, 33 of the substrate 30 can be coated, and then the temperature of the plasma beam 12 is gradually decreased with the distance from the outlet, so as to form a temperature gradient, which can be controlled to have a specific temperature in a very small processing range, i.e., the plasma source 10 provides a heat source (i.e., the plasma beam 12) with a temperature gradient (Thermal gradient) in the region to be processed and a reactive chemical component for performing a Thermal treatment and modification on the edge (i.e., the edge 31) of the substrate 30, so that the edge 31 can be repaired. Since the insulating layer 22 is provided on the surface of the carrier 20 facing the plasma source 10, the flow direction of the plasma beam 12 is prevented from being affected, so that the plasma beam 12 can completely act on the side edge 31.
For example, the conventional plasma source 10 can be divided into vacuum and atmospheric pressure plasma, and the atmospheric pressure plasma has dozens of different forms and a large plasma temperature range according to different principles, and cannot be used as the plasma source used in the present technology. The plasma source can be suitable for repairing the defects of different types of substrates by using alternating current and through voltage source and parameter setting. In addition, in consideration of the price of the working gas used in the plasma source 10, depending on the type of the actual substrate 30, air may be used or working gas with different gas ratios may be used, and different gas compositions may affect the process profile and the substrate stress, for example, clean compressed air (CDA), nitrogen (N) are currently used 2 ) Or nitrogen (N) 2 ) Argon (Ar), hydrogen (H) 2 ) Oxygen (O) 2 ) And helium (He), and the gas composition ratio is adjusted to optimize parameters for each type of substrate 30.
Referring to fig. 3, a plasma source 10A of a plasma system 100A for treating edge defects of a substrate according to the present invention includes two rows of a plurality of plasma generating units 11A in a linear equidistant array, and a substrate 30A has two straight side edges 31A facing the plasma generating units 11A, respectively. The traveling direction (i.e. parallel to the first direction F1) of the plasma beam 12A generated by each plasma generation unit 11A may be substantially perpendicular to the side edge 31A and aligned with the geometric center of the side edge 31A (the arrangement thereof can be referred to as fig. 1A), or the traveling direction of the plasma beam 12A generated by each plasma generation unit 11A may be at an angle with respect to the side edge 31A and aligned with the geometric center of the side edge 31A (the arrangement thereof can be referred to as fig. 1B). The distance D1 between each plasma generation unit 11A and the side edge 31A is the same.
The embodiment of fig. 3 shows that a row of a plurality of plasma generating units 11A may be disposed on each of the two opposite side edges 31A of the substrate 30A, or alternatively, only a row of a plurality of plasma generating units 11A may be disposed to process one side edge 31A of the substrate 30A, if both side edges 31A of the substrate 30A need to be processed, the substrate 30A may be turned over the other side edge 31A after one side edge 31A of the substrate 30A is processed.
Referring to fig. 4, a plasma source 10B of a plasma system 100B for processing a substrate edge defect according to the present invention includes a plurality of plasma generating units 11B, a substrate 30B having a circular side edge 31B, the plurality of plasma generating units 11B having an arc (or ring) equidistant array, each plasma generating unit 11B generating a plasma beam 12B traveling in a direction substantially toward the side edge 31B and aligned with a geometric center of the side edge 31B (as shown in fig. 1A), the plasma beam 12B traveling in a direction toward or away from a center C of the substrate 30B, i.e., if the plasma beam 12B is toward the center C of the substrate 30B, the plasma beam 12B is substantially perpendicular to the side edge 31B of the substrate 30B (similar to the configuration shown in fig. 1A), and if the plasma beam 12B is not toward the center C of the substrate 30B, the plasma beam 12B has an included angle with the side edge 31B of the substrate 30B (similar to the configuration shown in fig. 1B). Each plasma generation unit 11B is spaced from the side edge 31B by the same distance D1. The defect at the side edge 31B of the substrate 30B can be repaired by the plasma beam 12B by rotating the substrate around the center C.
With the embodiments shown in fig. 3 and 4, all the plasma generating units 11A, 11B may be ignited, or may be ignited at intervals, or only partially, depending on the desired control. Taking fig. 3 as an example, when all the plasma generation units 11A are ignited, the entire side edge 31A of the substrate 30A can be repaired by controlling the substrate 30A to move by the distance D2 between two adjacent plasma generation units 11A. If the side edge 31A of the substrate 30A is only partially defective, the plasma generation unit 11A at the corresponding position may be ignited. In addition, all the plasma generating units 11A of each array of fig. 3 can be disposed on a base (not shown in the figures), so as to form a whole, which can reduce the distance error caused by assembling the plasma generating units 11A; similarly, all the plasma generating units 11B of fig. 4 can be integrally formed by being disposed on a base (not shown).
Referring to fig. 1A (or fig. 1B), fig. 2 and fig. 5, a plasma system for processing edge defects of a substrate according to the present invention as shown in fig. 1A (or fig. 1B) and the above description may be summarized as a method flow 200 for processing edge defects of a substrate according to the present invention as shown in fig. 5, comprising:
step 202: providing a plasma source 10, the plasma source 10 comprising at least one plasma generating unit 11;
step 204: arranging a carrier 20 to convey at least one substrate 30 to move relative to the plasma source 10, wherein the traveling direction (the first direction F1A) of the plasma beam 12 of the plasma source 10 is substantially parallel to the surface of the substrate 30, and the substrate 30 has at least one region to be processed;
step 206: the substrate 30 is moved into a plasma-active region A1, where a Thermal gradient heat source (i.e., plasma beam 12) and a reactive chemical species are provided by the plasma source 10 to thermally treat and modify the edges (i.e., side edges 31) of the substrate 30.
Referring to fig. 1A (or fig. 1B) and fig. 2, the plasma system for processing edge defects of a substrate and the processing method using the same according to the present invention are applicable to substrates of different materials, such as glass, wafer, ceramic, metal, etc. Taking the defect of the glass substrate as an example, when the thickness of the substrate 30 is about 0.05 cm and the melting point is 800 ℃, the air plasma can be used, the pitch P =0.5 cm, the plasma beam 12 has a plasma power of 600W, and the moving speed of the substrate 30 is less than 2 cm/s, so that the side edge 31 of the substrate 30 can be melted to achieve the repairing effect. The pitch P is designed according to the glass transition temperature (Tg) point, thickness, and speed of the substrate 30, for example, as the thickness of the substrate 30 is thicker, more heat is required, and thus the pitch P must be reduced, and as the speed of the substrate 30 is slower, more heat emitted from the plasma beam 12 is received by the side edge 31 of the substrate 30. In practical operation, trial work can be performed to obtain the optimal pitch P and speed, and then the repairing effect can be judged by naked eyes or can be judged by a microscope.
In summary, the plasma system for processing edge defects of a substrate and the processing method using the same according to the present invention can achieve the effect of precisely and hierarchically controlling the temperature gradient and the position by repairing the edge of the substrate with the plasma beam, so that the edge deformation caused by the over-processing or the influence on the material of the substrate due to the conventional substrate-strengthening technical means or the difficulty in cutting the substrate due to the strengthening of the substrate are avoided. And the invention can make the edge characteristic of the substrate consistent with the inner characteristic of the substrate, including strength. Taking the glass substrate as an example, compared with the conventional edging method, the bending strength of the glass substrate treated by the invention is increased by more than one time, and the glass substrate is naturally cooled after being heated without additional cooling treatment.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (19)
1. A plasma system for processing edge defects of a substrate, comprising:
a plasma source including at least one plasma generating unit, wherein the plasma source provides a heat source with a temperature gradient and a reactive chemical component in a region to be processed for performing heat treatment and modification on the edge of the substrate;
a carrying device for conveying at least one substrate to move relative to the plasma source so as to enter and exit a plasma action area, wherein the carrying device is covered by an insulating layer facing the side of the plasma source and is used for avoiding influencing the flow direction of the plasma beam so as to ensure that the plasma beam can completely act on the side edge;
wherein the substrate has a region to be processed, the plasma source provides a plasma beam to the region to be processed in the plasma action region, and the traveling direction of the plasma beam is substantially parallel to the surface of the substrate;
the plasma source comprises at least one row of a plurality of plasma generating units which are linearly arranged, the substrate is provided with at least one side edge which faces the plurality of plasma generating units, the side edge of the substrate is a straight side edge, the advancing direction of a plasma beam generated by each plasma generating unit is substantially parallel to the surface of the substrate and is aligned with the geometric center of the side edge, and the moving direction of the plasma source is parallel to the tangential direction of the side edge of the substrate.
2. The plasma system of claim 1, wherein the carrier has a chuck for holding the substrate.
3. The plasma system of claim 1, wherein the substrate has a side edge facing the plasma beam, the plasma beam travels substantially parallel to a surface of the substrate and is aligned with a geometric center of the side edge, and the plasma source moves parallel to a tangential direction of the side edge of the substrate.
4. The plasma system of claim 3, wherein the plasma beam travels substantially perpendicular to the side edge.
5. The plasma system of claim 2, wherein the substrate has a side edge facing the plasma with a distance P from the plasma source, the distance P being 0.2 cm to 1.5 cm.
6. The plasma system of claim 5, wherein the chuck has a spacing Q from the plasma source, the spacing Q is greater than the spacing P, and the difference between the spacing Q and the spacing P is greater than 0.3 cm.
7. The plasma system of claim 1, wherein a velocity of movement of the substrate relative to the plasma source is between 0.1 cm/sec and 5 cm/sec.
8. The plasma system of claim 1, wherein a direction of travel of the plasma beam generated by each of the plasma generating units is substantially perpendicular to the side edge.
9. The plasma system of claim 8, wherein each of the plasma generation units is spaced the same distance from the side edge.
10. The plasma system of claim 8, wherein the plurality of plasma generating units are in an equidistant linear array.
11. A method of processing edge defects of a substrate, comprising:
providing a plasma source comprising at least one plasma generating unit;
arranging a bearing device to convey at least one substrate to move relative to the plasma source, wherein the bearing device is covered with an insulating layer on the side facing the plasma source and is used for avoiding influencing the flow direction of the plasma beam so as to enable the plasma beam to completely act on the side edge, the plasma beam of the plasma source advances in a direction which is substantially parallel to the surface of the substrate, and the substrate is provided with at least one region to be processed;
moving the substrate into a plasma action region, providing a Thermal gradient (Thermal gradient) heat source and a reactive chemical component to the region to be processed by the plasma source for heat treatment and modification of the edge of the substrate;
the plasma source comprises at least one row of a plurality of plasma generating units which are linearly arranged, the substrate is provided with at least one side edge which faces the plasma generating units, the side edge of the substrate is a straight side edge, the advancing direction of a plasma beam generated by each plasma generating unit is substantially parallel to the surface of the substrate and is aligned with the geometric center of the side edge, and the moving direction of the plasma source is parallel to the tangential direction of the side edge of the substrate.
12. The method of claim 11, wherein the substrate has a side edge facing the plasma, the plasma beam travels in a direction substantially parallel to a surface of the substrate and aligned with a geometric center of the side edge, and the plasma source moves in a direction parallel to a tangent of the side edge of the substrate.
13. The method of claim 12, wherein the direction of travel of the plasma beam is substantially perpendicular to the side edge.
14. The method of claim 11, wherein the substrate has a side edge facing the plasma with a distance P from the plasma source of 0.2 cm to 1.5 cm.
15. The method of claim 14, wherein the carrier has a chuck for holding the substrate; a distance Q is provided between the chuck and the plasma source, the distance Q is greater than the distance P, and the difference between the distance Q and the distance P is greater than 0.3 cm.
16. The method of claim 11, wherein the substrate is moved at a speed of 1 mm/s to 50 mm/s relative to the plasma source.
17. The method of claim 11, wherein the plasma beam generated by each plasma generation unit travels in a direction substantially perpendicular to the side edge.
18. The method of claim 17, wherein each of the plasma generating units is spaced apart from the side edge by the same distance.
19. The method of claim 17, wherein the plurality of plasma generation units are in an equidistant linear array.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107119786A TW202001977A (en) | 2018-06-08 | 2018-06-08 | Plasma system for substrate edge treatment and treatment method using the plasma system |
| TW107119786 | 2018-06-08 |
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| CN110581049A CN110581049A (en) | 2019-12-17 |
| CN110581049B true CN110581049B (en) | 2023-01-31 |
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| US20220208533A1 (en) * | 2020-12-26 | 2022-06-30 | Industrial Technology Research Institute | Surface processing equipment and surface processing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006043943A1 (en) * | 2006-09-14 | 2008-03-27 | Leybold Optics Gmbh | Method for applying layers to substrates with curved surfaces |
| CN101743341A (en) * | 2007-07-12 | 2010-06-16 | 应用材料股份有限公司 | Systems for plasma enhanced chemical vapor deposition and bevel edge etching |
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| YU135290A (en) * | 1989-07-25 | 1992-12-21 | Schuler, Albert | HARDENING PROCEDURE FOR CUTTING EDGES OF SAWS, KNIVES AND PUNCHING TOOLS |
| JP4410771B2 (en) * | 2006-04-28 | 2010-02-03 | パナソニック株式会社 | Bevel etching apparatus and bevel etching method |
| JP5622077B2 (en) * | 2010-03-12 | 2014-11-12 | 日立金属株式会社 | Semiconductor substrate processing apparatus and semiconductor substrate manufacturing method |
| CN103531440B (en) * | 2013-10-22 | 2016-08-17 | 武汉新芯集成电路制造有限公司 | A kind of surface repairing method of wafer rear |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006043943A1 (en) * | 2006-09-14 | 2008-03-27 | Leybold Optics Gmbh | Method for applying layers to substrates with curved surfaces |
| CN101743341A (en) * | 2007-07-12 | 2010-06-16 | 应用材料股份有限公司 | Systems for plasma enhanced chemical vapor deposition and bevel edge etching |
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| TW202001977A (en) | 2020-01-01 |
| CN110581049A (en) | 2019-12-17 |
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