CN110571118B - Flow threshold determination method, control device and semiconductor processing equipment - Google Patents
Flow threshold determination method, control device and semiconductor processing equipment Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 77
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000012545 processing Methods 0.000 title claims abstract description 15
- 238000004891 communication Methods 0.000 claims description 26
- 238000012544 monitoring process Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 258
- 239000001307 helium Substances 0.000 description 21
- 229910052734 helium Inorganic materials 0.000 description 21
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 21
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000001816 cooling Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract
The invention provides a method for determining a flow threshold value of a gas pipeline, an alarm method, a control device and semiconductor processing equipment. The determination method comprises the following steps: closing a second end of the main gas pipeline and communicating the main gas pipeline with a bypass gas pipeline; supplying gas to the main gas line at a predetermined gas pressure; determining the upper limit flow of air leakage of the main air pipeline according to the preset air pressure; measuring a steady gas flow rate of the bypass gas line; and determining the upper flow threshold of the gas flowing into the main gas pipeline according to the stable gas flow of the bypass gas pipeline and the upper leakage limit flow. The method for determining the flow threshold value of the gas pipeline at least realizes the dynamic adjustment of the upper flow threshold value.
Description
Technical Field
The invention relates to the technical field of gas pipelines, in particular to a method for determining a flow threshold value of a gas pipeline, an alarm method for the flow of the gas pipeline, a control device for the flow of the gas pipeline and semiconductor processing equipment.
Background
Patterned sapphire substrate technology is commonly used in the fabrication process of high brightness GaN-based LEDs. A typical etching process chamber for patterning a sapphire substrate referring to fig. 1, a radio frequency power supply 12 is connected to a coil 11 for generating a high frequency electric field in the process chamber. The sapphire substrate is placed on a tray 15 (not shown in fig. 1). A closed chamber is formed between the tray 15, the seal ring 16 and the chuck 14. A main gas line (not shown in fig. 1) passes through the chuck 14 to introduce a gas, such as helium, into the closed chamber, and the gas conducts heat from the tray 15 to the chuck 14, and further cools the temperature of the chuck 14 by other cooling means, thereby cooling the tray 14. In addition, a closed cavity can be formed between the tray 15 and the sapphire substrate, and the purpose of transferring heat on the sapphire substrate to the tray 15 can also be achieved by introducing gases such as helium into the closed cavity. The press ring 13 in fig. 1 is used to press and fix the components below it.
Figure 2 illustrates gas paths for the etch process chamber shown in figure 1. The helium gas source is cooled by an air cooler FL after flowing through a pressure gauge PG through a pressure regulating valve PR. With pneumatic valve V1 and pneumatic valve V2 open, helium gas is vented into the enclosed chamber 10 at the bottom of tray 15. With pneumatic valve V3 open, helium is drawn through needle valve NV and guard knife isolator KF by dry pump DP. The pressure controller PC is, for example, 649 gauge, and controls the gas pressure at its outlet port and the flow rate H of gas flowing out of its outlet port. The gas flow H consists of two parts, one part H1 being pumped away by the dry pump DP via the bypass line S and the other part H2 entering the bottom of the tray 15 in the process chamber via the main gas line M. Due to the poor seal between the tray 15 and the chuck 14, the flow H2 enters the process chamber through the sealing ring 16.
The higher the pressure of helium, the greater its thermal conductivity. It is therefore desirable to maintain a constant helium gas pressure within each of the aforementioned enclosed chambers. To ensure that heat from the tray 15 is quickly conducted to the chuck 14, it is necessary to maintain the helium gas pressure at about a certain value. The larger the flow rate H2 of the blow-by gas between the tray 15 and the chuck 14, the larger the flow rate H of the gas flowing out of the pressure controller PC becomes in order to maintain the air pressure in the closed chamber. To avoid the flow rate H2 of the blow-by gas from affecting the process result, it is necessary to set an upper threshold value of the flow rate of the helium gas flowing out of the pressure controller PC.
The existing setting method is as follows: in the non-imaging sapphire substrate process time, a user manually sets an upper limit threshold of the helium gas flow flowing out of the pressure controller PC on an upper computer, and the upper limit threshold of the flow is fixed and unchanged during the imaging sapphire substrate process. Most semiconductor equipment manufacturers (including chemical vapor deposition equipment PECVD equipment manufacturers, etc.) employ this technique when they need to cool the trays. If the pressure of the helium gas flowing out of the pressure controller PC is adjusted during the process, it is not possible to dynamically adjust the upper threshold value of the flow H of helium gas flowing into the main gas line M.
Disclosure of Invention
The invention aims to provide a method for determining a flow threshold value of a gas pipeline, an alarm method for the flow of the gas pipeline, a control device for the flow of the gas pipeline and semiconductor processing equipment, and aims to solve the technical problem that the upper limit threshold value of the flow of gas flowing into a main gas pipeline cannot be dynamically adjusted in the prior art.
According to a first aspect of the invention, there is provided a method of determining a flow threshold for a gas line, the gas line comprising a main gas line and a bypass gas line, the main gas line being in selective communication with the bypass gas line, a first end of the main gas line being for receiving gas, a second end of the main gas line being for selective communication with a closed chamber, the flow threshold comprising an upper flow threshold for gas flowing into the main gas line, the method comprising the steps of:
closing a second end of the main gas pipeline and communicating the main gas pipeline with the bypass gas pipeline;
supplying gas to the main gas line at a predetermined gas pressure;
determining the corresponding preset air leakage upper limit flow of the main air pipeline according to the preset air pressure;
measuring a steady gas flow rate of the bypass gas line;
and determining the upper flow threshold of the gas flowing into the main gas pipeline according to the stable gas flow of the bypass gas pipeline and the upper leakage limit flow.
Optionally, the upper flow threshold is the sum of the steady gas flow and the upper leakage flow.
Preferably, the flow threshold further comprises a lower flow threshold for gas flowing into the main gas line, the method further comprising the steps of: and determining the lower flow limit threshold of the gas flowing into the main gas pipeline according to the stable gas flow.
Optionally, the lower flow threshold is the steady gas flow.
According to a second aspect of the present invention, there is provided a method of warning of flow in a gas line, the gas line including a main gas line and a bypass gas line, the main gas line being in selective communication with the bypass gas line, a first end of the main gas line being adapted to receive gas, and a second end of the main gas line being adapted to be in selective communication with a closed chamber, comprising the steps of:
closing the second end of the main gas line open;
monitoring a flow rate of gas flowing into the main gas line;
the alarm is raised when the flow rate is above an upper flow threshold obtained by the method of the first aspect of the invention, or,
the alarm is raised when the flow rate is below a lower flow rate threshold value, which is obtained by the method provided by the first aspect of the invention.
According to a third aspect of the present invention, there is provided a control device for the flow of a gas line, the gas line comprising a main gas line and a bypass gas line, the main gas line being in selective communication with the bypass gas line, a first end of the main gas line being for receiving gas, and a second end of the main gas line being for selective communication with a closed chamber, the control device comprising a memory storing instructions that the processor executes to perform a method according to the first or second aspect of the present invention.
According to a fourth aspect of the invention, there is provided semiconductor processing apparatus comprising a closed chamber, a main gas line in selective communication with the bypass gas line, a first end of the main gas line in communication with the pressure controller for receiving gas, a bypass gas line, a flow meter and a control device according to the third aspect of the invention, the second end of the main gas line being for selective communication with the closed chamber; the flow meter is used for measuring the flow of the gas flow in the bypass gas pipeline so as to obtain the stable gas flow.
Optionally, a pressure controller is further included; the control device controls the gas pressure of the gas flowing into the main gas line and detects the flow rate of the gas flowing into the main gas line by the pressure controller.
Optionally, a chuck for carrying a tray is included, the closed chamber being formed between the tray and the chuck, the main gas line being formed within the chuck.
Preferably, the gas flow rate monitoring device further comprises an alarm device for alarming when the gas flow rate of the main gas pipeline is above the upper flow rate threshold value or alarming when the gas flow rate of the main gas pipeline is below the lower flow rate threshold value.
The method provided by the invention can at least realize the technical problem of dynamically adjusting the upper limit threshold of the helium flow H flowing into the main gas pipeline in the semiconductor process.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a process chamber of a conventional etching apparatus;
FIG. 2 is a schematic diagram of a gas line for the process chamber of FIG. 1;
FIG. 3 is a schematic diagram of a gas circuit provided by the present invention;
FIG. 4 is a flow chart of a method for determining a flow threshold for the gas line of FIG. 3;
FIG. 5 is a flow chart of a specific example of a method for determining a flow threshold for the gas line of FIG. 3;
FIG. 6 is a flow chart of another specific example of a method for determining a flow threshold for the gas line of FIG. 3;
fig. 7 is a block diagram of a control device for the flow of a gas line provided by an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
According to a first aspect of the invention, a method for determining a flow threshold value for a gas line is provided. Referring to fig. 3, the gas line includes a main gas line M in selective communication with a bypass gas line S, a first end of the main gas line M for receiving gas, and a second end of the main gas line M for selective communication with the enclosed chamber. The flow threshold comprises an upper threshold flow of gas into the main gas line M, as shown in fig. 4, the method comprising the following steps. For example, helium is introduced into the closed chamber, and other gases capable of conducting heat are also suitable.
At step S1, the second end of the main gas line is closed, and the main gas line is communicated with the bypass gas line.
Specifically, upon determination of the flow rate threshold, the air-operated valve V2 is closed, and the air-operated valve V1 and the air-operated valve V3 are opened. The needle valve NV is used to regulate the flow rate of helium gas in the bypass line S. The dry pump DP is used to pump out helium.
In step S2, air is supplied to the main air line at a predetermined air pressure.
The pressure controller PC controls the pressure of the gas it inputs into the main gas line M at a predetermined pressure. A portion of the gas flowing into the main gas line M enters the bypass gas line S and a portion flows into the process chamber due to a leak in the enclosed chamber 10.
Other types of devices may be used by those skilled in the art to supply a predetermined pressure of gas to the main gas line. The invention is not limited herein to the use of a pressure controller PC.
In step S3, a preset upper leakage flow rate of the main air line is determined according to the preset air pressure.
The preset upper leakage flow rate is an empirical value determined by experiment. That is, the performance of the finally formed product is detected under the condition of different leakage flow rates of the closed chamber due to poor sealing, and the maximum leakage flow rate of the closed chamber is the upper limit threshold value when the product performance meets the requirement of a certain standard.
The flow H2 of the blow-by gas can be calculated by subtracting the flow H out of the pressure controller from the flow H1 measured by the flow meter MFC.
In step S4, a steady gas flow rate of the bypass line is measured.
This steady gas flow is the gas flow measured by the flow meter MFC after the flow of the gas in the bypass line S has stabilized.
In step S5, an upper threshold flow rate of gas flowing into the main gas line is determined based on the steady gas flow rate of the bypass gas line and the upper leakage gas flow rate.
It should be noted that, if the closed chamber 10 is well sealed, for example, a dry etching process of a sapphire substrate is taken as an example, that is, the sealing between the tray 15 and the chuck 14 is good, the sealing between the tray 15 and the sapphire substrate is good, and the cooling effect of the cooling device on the chuck 14 is good, and the flow rate flowing into the closed chamber 10 from the main gas pipeline M during the process should be 0.
In a specific example, the upper threshold flow rate of the gas flowing into the main gas line M is equal to the sum of the steady gas flow rate of the bypass gas line and the upper leakage flow rate.
It can be understood that when the gas flow rate flowing into the main gas line M is greater than the upper threshold, it indicates that the gas leakage from the closed chamber 10 is serious, and the leaked gas enters the process chamber, which affects the etching process performed in the process chamber and eventually deteriorates the performance of the product.
In practical operation, the upper threshold value of the flow rate of the gas flowing into the main gas pipeline may be larger than the threshold value or smaller than the threshold value according to the practical situation of the process. The present invention is not particularly limited in this regard.
It should be noted that part of the gas is always pumped out of the bypass line S, which is to enable the pressure controller PC to dynamically adjust the flow rate of the gas flowing out of the pressure controller PC all the time, so that the gas pressure of the gas flowing out of the pressure controller PC is always kept at a stable value.
In the process, if the gas pressure of the gas flowing out of the pressure controller PC (i.e. into the main gas pipe M) needs to be adjusted, the above method is operated once, and the upper limit threshold of the flow rate of the gas flowing into the main gas pipe M can be adjusted. The process does not need to be stopped and then measurement and determination are carried out, so that the dynamic adjustment of the upper limit threshold of the gas flow flowing into the main gas pipeline M is realized.
Preferably the flow threshold further comprises a lower flow threshold for gas flowing into the main gas line, the method further comprising the steps of: and determining the lower flow limit threshold of the gas flowing into the main gas pipeline according to the stable gas flow.
In a specific example, this lower threshold flow is equal to the steady gas flow in the bypass line S determined in the preceding step.
Taking a sapphire substrate etching process as an example, if the cooling effect of the cooling device on the chuck 14 is not good, which causes the temperature of the helium gas in the closed chamber to rise and expand, the helium gas in the closed chamber will flow back into the main gas pipeline M, which causes the gas pressure at the gas inlet end of the main gas pipeline M (i.e. the gas outlet end of the pressure controller PC) to increase, and the pressure controller PC is set to maintain the gas pressure of the gas flowing out of the pressure controller PC at a stable value, so that the pressure controller PC will reduce the flow rate of the gas output by the pressure controller PC. In an extreme case, the flow rate of the gas flowing out of the pressure controller PC is 0.
Therefore, when the gas pressure of the gas flowing out of the pressure controller PC is lower than the threshold value, it is described that the cooling effect of the cooling device on the chuck 14 is not good, and the back flow of the gas occurs. According to the method provided by the invention, further, the dynamic adjustment of the lower limit threshold of the gas flow out of the pressure controller PC can also be realized.
In practical operation, the lower threshold value of the flow rate of the gas flowing into the main gas pipeline may be larger than the threshold value or smaller than the threshold value according to the practical situation of the process. The present invention is not particularly limited in this regard.
Referring to fig. 5, a specific example of the method for determining the gas flow threshold provided by the present invention is described, and the method is applied to the gas pipeline shown in fig. 3, and includes the following steps.
In step S51, the air-operated valve V1 and the air-operated valve V3 are opened, and the air-operated valve V2 is closed.
In step S52, the gas pressure Pi of the gas flowing out of the pressure controller PC is set.
In step S53, after the pressure of the pressure controller PC is stabilized, the flow rate Hi measured by the flow meter MFC is recorded after the gas flow rate in the flow meter MFC is read.
In step S54, the lower limit threshold of the gas flow rate out of the pressure controller PC is set to Hi.
In step S55, the database is searched, the air leakage upper limit threshold Ai of the closed chamber corresponding to Pi is read, the sum of Hi and Ai is calculated, and the calculation result is used as the upper limit threshold of the gas flow rate flowing out of the pressure controller PC.
In step S56, the two thresholds are stored in the upper computer as the alarm threshold for the upper computer to monitor the flow rate of the pressure controller PC.
Referring to fig. 6, a process of patterning a sapphire substrate by dry etching is taken as an example to illustrate the method for determining the airflow threshold provided by the present invention. According to the process result, the upper limit flow of the leakage gas of the helium gas in the closed chamber is A1=1sccm @4T, and A2=1.8sccm @6T on the premise of ensuring the performance of the product. That is, when the gas pressure flowing into the main gas pipe M is 4T, the maximum leakage flow rate of the closed chamber is allowed to be 1sccm, and when the gas pressure flowing into the main gas pipe M is 6T, the maximum leakage flow rate of the closed chamber is allowed to be 1.8 sccm. Still taking the pipeline shown in fig. 3 as an example, the determination method includes the following steps.
In step S61, the air-operated valve V1 and the air-operated valve V3 are opened, and the air-operated valve V2 is closed.
In step S62, the pressure of the gas flowing out of the pressure controller PC is set to 4T.
In step S63, after the air pressure value read by the pressure controller PC is stabilized, the flow rate H1 measured by the flow meter MFC is read.
In step S64, the lower limit threshold of the flow rate out of the pressure controller PC is set to H1.
In step S65, the database is searched to find that the maximum allowable leak gas of the closed chamber for the pressure 4T is 1sccm, and 1sccm + H1 is used as the upper threshold of the flow rate of the outflow pressure controller PC.
In step S66, a signal to adjust the helium gas pressure to 6T is obtained. For example, after step S65, a process of patterning sapphire is performed, during which the pressure of helium gas is increased to enhance the thermal conductivity from the tray 15 to the chuck 14.
In step S67, the air-operated valve V1 and the air-operated valve V3 are opened, and the air-operated valve V2 is closed.
In step S68, the pressure of the gas flowing out of the pressure controller PC is set to 6T.
In step S69, after the air pressure value read by the pressure controller PC is stabilized, the flow rate H2 measured by the flow meter MFC is read.
In step S6a, the lower limit threshold of the flow rate out of the pressure controller PC is set to H2.
In step S6b, the database is searched to find that the maximum allowable leak gas of the closed chamber for the pressure 6T is 1.8sccm, and 1.8sccm + H2 is used as the upper threshold of the flow rate of the outflow pressure controller PC.
It can be understood that the flow threshold determined by the method provided by the embodiment of the invention can be output to a user for viewing through a display screen or output to the user for viewing through a mode of printing paper.
According to a second aspect of the present invention, there is provided a method of warning of flow in a gas line, the gas line including a main gas line and a bypass gas line, the main gas line being in selective communication with the bypass gas line, a first end of the main gas line being for receiving gas, and a second end of the main gas line being in selective communication with a closed chamber, the method comprising the steps of:
closing the second end of the main gas line open;
monitoring the flow of gas into the main gas line (corresponding to the outflow pressure controller PC in fig. 3);
the method according to the first aspect of the present invention may be arranged to alert when the flow rate is above an upper flow threshold obtained by the method according to the first aspect of the present invention, or to alert when the flow rate is below a lower flow threshold obtained by the method according to the first aspect of the present invention.
Therefore, under the condition of dynamically adjusting the gas pressure parameters, the alarm threshold value is dynamically adjusted, and then the corresponding alarm control signal is generated without stopping the technological process.
According to a third aspect of the present invention, there is provided a control device for the flow of a gas line, the gas line comprising a main gas line and a bypass gas line, the main gas line being in selective communication with the bypass gas line, a first end of the main gas line being adapted to receive a gas, and a second end of the main gas line being in selective communication with a closed chamber, as shown in fig. 7, the control device comprising a memory 100 and a processor 200, the memory 100 storing instructions, the processor 200 executing the instructions to perform a method according to the first or second aspect of the present invention.
Specifically, the Memory 100 is, for example, a Read Only Memory (ROM), a Flash Memory (Flash Memory), or the like. The processor 200 is, for example, a Central Processing Unit (CPU), a single chip microcomputer, or the like. The control device is, for example, a computer, a control chip, an upper computer, etc., and taking the gas pipeline shown in fig. 3 as an example, the control device can control the on/off of each valve, read the reading of the flow meter MFC, set the outlet gas pressure of the pressure controller PC, and read the outlet gas flow of the pressure controller PC. Thereby realizing the dynamic adjustment of the upper limit threshold of the air pressure flowing into the main air pipeline. In some examples, further, dynamic adjustment of the lower threshold of gas pressure flowing into the main gas line may also be implemented. The control device may control the pressure of the gas flowing into the main gas line M and detect the flow rate of the gas flowing into the main gas line M by other means.
According to a fourth aspect of the present invention there is provided semiconductor processing apparatus comprising an enclosed chamber, a main gas line, a by-pass gas line, a flow meter and a control device according to the third aspect of the present invention for carrying out the method of the first or second aspect of the present invention.
The main gas line is in selective communication with the bypass gas line, a first end of the main gas line is in communication with the pressure controller to receive gas, and a second end of the main gas line is for selective communication with the enclosed chamber; the flow meter is used for measuring the flow of the gas flow in the bypass gas pipeline so as to obtain the stable gas flow.
Optionally, a pressure controller is further included; the control device controls the gas pressure of the gas flowing into the main gas line and detects the flow rate of the gas flowing into the main gas line by the pressure controller.
The main gas line, the bypass gas line, the pressure controller and the flow meter are for example the main gas line M, the bypass gas line S, the pressure controller PC and the flow meter MFC shown in fig. 3.
Specifically, the semiconductor processing apparatus includes a chuck for carrying a tray, the closed chamber is formed between the tray and the chuck, and the main gas line is formed within the chuck.
Preferably, the semiconductor processing apparatus further comprises an output device for outputting the flow threshold value. The output device is, for example, a display screen, a speaker, or the like.
Preferably, the semiconductor processing apparatus further comprises an alarm device for alarming when the flow rate of the gas of the main gas line is above an upper flow rate threshold value, or alarming when the flow rate of the gas of the main gas line is below a lower flow rate threshold value. For example, alarm words and symbols are sent out on a display screen, and alarm signals are sent out through a loudspeaker.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. A method of determining a flow threshold for a gas line, the gas line including a main gas line and a bypass gas line, the main gas line being in selective communication with the bypass gas line, a first end of the main gas line being for receiving gas, a second end of the main gas line being for selective communication with a closed chamber, wherein the flow threshold comprises an upper flow threshold for gas flowing into the main gas line, the method comprising the steps of:
closing a second end of the main gas pipeline and communicating the main gas pipeline with the bypass gas pipeline;
supplying gas to the main gas line at a predetermined gas pressure;
determining the corresponding preset air leakage upper limit flow of the main air pipeline according to the preset air pressure; the preset upper leakage flow is the maximum leakage flow of the closed chamber under the preset air pressure;
measuring a steady gas flow rate of the bypass gas line;
determining an upper flow limit threshold of the gas flowing into the main gas pipeline according to the stable gas flow of the bypass gas pipeline and the upper leakage limit flow; the upper flow threshold is the sum of the stable gas flow and the upper leakage flow.
2. The method of determining of claim 1, wherein the flow threshold further comprises a lower flow threshold for gas flowing into the main gas line, the method further comprising the steps of: and determining the lower flow limit threshold of the gas flowing into the main gas pipeline according to the stable gas flow.
3. The determination method according to claim 2, wherein the lower flow threshold is the steady gas flow.
4. A method of alerting of a flow rate of a gas line, the gas line including a main gas line and a bypass gas line, the main gas line being in selective communication with the bypass gas line, a first end of the main gas line being for receiving gas, and a second end of the main gas line being for selective communication with a closed chamber, comprising the steps of:
communicating a second end of the primary air line with a closed chamber;
monitoring a flow rate of gas flowing into the main gas line;
alerting when the flow rate is above an upper flow threshold obtained by the method of any one of claims 1-3, or,
alarming when the flow rate is below a lower flow rate threshold value, which is obtained by the method of claim 2 or 3.
5. A control device for the flow of a gas line comprising a main gas line and a bypass gas line, the main gas line being in selective communication with the bypass gas line, a first end of the main gas line being for receiving gas, a second end of the main gas line being for selective communication with a closed chamber, characterized in that the control device comprises a memory storing instructions that are executed by a processor to perform the method according to claim 2 or 3.
6. A semiconductor processing apparatus comprising a closed chamber, a main gas line, a bypass gas line, a flow meter, and a control device according to claim 5,
the main gas line is in selective communication with the bypass gas line, a first end of the main gas line is for receiving gas, and a second end of the main gas line is in selective communication with the enclosed chamber;
the flow meter is used for measuring the flow of the gas flow in the bypass gas pipeline so as to obtain the stable gas flow.
7. The semiconductor processing apparatus of claim 6, further comprising a pressure controller;
the control device controls the gas pressure of the gas flowing into the main gas line and detects the flow rate of the gas flowing into the main gas line by the pressure controller.
8. The semiconductor processing apparatus of claim 6, further comprising a chuck for carrying a tray, the enclosed chamber being formed between the tray and the chuck, the main gas line being formed within the chuck.
9. The semiconductor processing apparatus of any one of claims 6 to 8, further comprising an alarm device for alarming when the flow rate of the gas in the main gas line is above an upper flow rate threshold value or when the flow rate of the gas in the main gas line is below a lower flow rate threshold value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810573953.5A CN110571118B (en) | 2018-06-06 | 2018-06-06 | Flow threshold determination method, control device and semiconductor processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810573953.5A CN110571118B (en) | 2018-06-06 | 2018-06-06 | Flow threshold determination method, control device and semiconductor processing equipment |
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| CN110571118A CN110571118A (en) | 2019-12-13 |
| CN110571118B true CN110571118B (en) | 2022-03-22 |
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| CN201810573953.5A Active CN110571118B (en) | 2018-06-06 | 2018-06-06 | Flow threshold determination method, control device and semiconductor processing equipment |
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| JPH06252093A (en) * | 1993-03-01 | 1994-09-09 | Tokyo Electron Ltd | Pressure control method and its device |
| CN1521567A (en) * | 2003-02-12 | 2004-08-18 | Asml | Lithographic apparatus and method to detect correct clamping of an object |
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| CN207599340U (en) * | 2017-10-16 | 2018-07-10 | 华景电通股份有限公司 | Inflation system |
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| WO1998029704A1 (en) * | 1997-01-02 | 1998-07-09 | Cvc Products, Inc. | Thermally conductive chuck for vacuum processor |
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| JPS56142435A (en) * | 1980-04-09 | 1981-11-06 | Toshiba Corp | Device for inspecting gas leak in cooling unit |
| JPH06252093A (en) * | 1993-03-01 | 1994-09-09 | Tokyo Electron Ltd | Pressure control method and its device |
| CN1521567A (en) * | 2003-02-12 | 2004-08-18 | Asml | Lithographic apparatus and method to detect correct clamping of an object |
| CN1873914A (en) * | 2005-06-02 | 2006-12-06 | 东京毅力科创株式会社 | Substrate processing method, substrate processing program and storage medium |
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