JPH05121361A - Semiconductor wafer cooler - Google Patents

Semiconductor wafer cooler

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Publication number
JPH05121361A
JPH05121361A JP28116291A JP28116291A JPH05121361A JP H05121361 A JPH05121361 A JP H05121361A JP 28116291 A JP28116291 A JP 28116291A JP 28116291 A JP28116291 A JP 28116291A JP H05121361 A JPH05121361 A JP H05121361A
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pressure
refrigerant gas
semiconductor wafer
valve
gas
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JP28116291A
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Japanese (ja)
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Hidenori Sekiya
秀徳 関谷
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Mitsubishi Electric Corp
三菱電機株式会社
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Abstract

PURPOSE: To prevent the dispersion in quality of products by estimating the pressure of the refrigerant gas inside the space at the rear of a semiconductor from the pressures before and behind the pressure difference generating means inside a gas introduction path and from the pressure difference, keeping it constant with the valve opening/closing controller of a wafer cooler, and thereby keeping the cooling capacity constant.
CONSTITUTION: A valve opening and closing controller 24 sends out an aperture instruction signal to a refrigerant gas introduction valve 10 so that the pressure P inside the space 6 between the stage 3 inside a vacuum chamber 1 and the semiconductor wafer 5 may be constant at all times based on the signals 25 and 26 representing the pressure before and behind the orifice 21 and sent from pressure measuring instruments 22 and 23, and adjusts the opening of the valve 10. Hereby, the quantity of the refrigerant gas 9 introduced into a gas introduction passage 8 is controlled, and the wafer is cooled with always constant capacity.
COPYRIGHT: (C)1993,JPO&Japio

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】この発明は、例えばRIE(反応性イオンエッチング)およびCVD(化学気相堆積)等のような半導体ウエハ真空処理装置に用いられ、被処理物としての半導体ウエハを冷却する半導体ウエハ冷却装置に関するものである。 BACKGROUND OF THE INVENTION This invention, for example, RIE used in the semiconductor wafer vacuum processing apparatus such as (reactive ion etching) and CVD (chemical vapor deposition), for cooling the semiconductor wafer as an object to be treated to a semiconductor wafer cooling device.

【0002】 [0002]

【従来の技術】図3は従来の半導体ウエハ冷却装置が適用された半導体ウエハ真空処理装置の概略構成を示す図である。 BACKGROUND ART FIG. 3 is a diagram showing a schematic configuration of a semiconductor wafer vacuum processing apparatus which is applied a conventional semiconductor wafer cooling device. 図において、1は壁面に反応ガス2の導入口1 In the figure, reference numeral 1 denotes a reaction gas 2 to the wall surface inlet port 1
aおよび真空ポンプ(図示せず)への接続口1bがそれぞれ形成される真空チャンバー、3はこの真空チャンバー2の底部に設けられ、Oリング4を介して半導体ウエハ5を担持するステージ、6はこのステージ3と半導体ウエハ5の裏面との間に形成される間隙、7は真空チャンバー2の上部のステージ3と対向する位置に設けられる電極である。 Vacuum chamber connecting port 1b are respectively formed in the a and a vacuum pump (not shown), 3 is provided at the bottom of the vacuum chamber 2, the stage carrying the semiconductor wafer 5 via the O-ring 4, 6 a gap formed between the back surface of the stage 3 and the semiconductor wafer 5, 7 is an electrode provided at a position opposed to the upper portion of the stage 3 of the vacuum chamber 2.

【0003】8はステージ3内を貫通して間隙6に連通し、間隙6内に冷媒ガス9を導入するガス導入路、10 [0003] 8 communicates with a gap 6 through the inside of stage 3, the gas introduction path for introducing a refrigerant gas 9 into the gap 6, 10
はこのガス導入路8に接続されガス導入路8内を流れる冷媒ガス9の流量を調節する冷媒ガス導入バルブ、11 The refrigerant gas inlet valve to adjust the flow rate of the refrigerant gas 9 flowing through the gas inlet passage 8 connected to the gas inlet passage 8, 11
はガス導入路8内の圧力を測定する圧力測定器、12はこの圧力測定器11からの測定圧力信号13を取り込み、冷媒ガス導入バルブ10へ開閉量指示信号14を送出するバルブ開閉制御器である。 The pressure measuring device for measuring the pressure in the gas inlet passage 8, 12 a measured pressure signal 13 from the pressure measuring device 11 captures, in the valve opening and closing control device for sending a closing amount indicating signal 14 to the refrigerant gas introducing valve 10 is there. そして、これら間隙6、ガス導入路8、冷媒ガス導入バルブ10、圧力測定器11およびバルブ開閉制御器12で半導体ウエハ冷却装置20を構成している。 Then, these gaps 6, the gas introducing path 8, the refrigerant gas introducing valve 10 constitute a pressure measuring device 11 and the semiconductor wafer cooling device 20 in the valve opening and closing control unit 12.

【0004】次に動作について説明する。 [0004] Next, the operation will be described. RIEやCV RIE or CV
D等のような半導体ウエハ真空処理装置においては、反応ガス2を導入口1aから真空チャンバー1内に流し込み、真空チャンバー1内が所定の圧力となるように、真空ポンプによって接続口1bから排気しながら、電極7 In the semiconductor wafer vacuum processing apparatus, such as D, the reaction gas 2 is poured from an inlet 1a into the vacuum chamber 1, so that the vacuum chamber 1 becomes a predetermined pressure, and exhausted from the connection port 1b by a vacuum pump while, electrode 7
とステージ3間に高周波電力を印加し、両者7、3間にプラズマを生成して半導体ウエハ5を処理している。 And a high frequency power is applied between the stage 3, processing the semiconductor wafer 5 to generate plasma between both 7,3. このような処理中に半導体ウエハ5はプラズマに曝され、 The semiconductor wafer 5 during such processing is exposed to the plasma,
又、表面での化学反応により加熱される。 Further, it is heated by a chemical reaction on the surface.

【0005】このような加熱の影響を防ぐために、装置には半導体ウエハ冷却装置20が組み込まれている。 [0005] In order to prevent the influence of such heat, the semiconductor wafer cooling device 20 is incorporated in the apparatus. すなわち、半導体ウエハ冷却装置20は、ガス道入路8からステージ3と半導体ウエハ5の裏面との間に形成される間隙6へ冷媒ガス9を供給し、この冷媒ガス9によって半導体ウエハ5の昇温を防止している。 That is, the semiconductor wafer cooling device 20, into the gap 6 formed between the back of the stage 3 and the semiconductor wafer 5 from the gas canal entrance road 8 supplies a refrigerant gas 9, the temperature of the semiconductor wafer 5 by the refrigerant gas 9 thereby preventing the temperature. この際、冷媒ガス9の伝熱能力は圧力によって異なるため、間隙6内の圧力を一定に保持しておく必要がある。 In this case, the heat transfer capacity of the refrigerant gas 9 because it varies the pressure, it is necessary to hold the pressure of the gap 6 constant. このため、O For this reason, O
リング4等のシール材により冷媒ガス9が真空チャンバー1内に漏れるのを極力抑えるとともに、圧力測定器1 Utmost suppresses the refrigerant gas 9 from leaking into the vacuum chamber 1 by a sealing member such as a ring 4, the pressure measuring device 1
1によりガス導入路8内の圧力を検出し、この測定圧力信号13に基づいてバルブ開閉制御器12は冷媒ガス導入バルブ10へ開閉量指示信号14を送出し、冷媒ガス導入バルブ10の開度を調節して間隙6内の冷媒ガス9 1 by detecting the pressure in the gas inlet passage 8, the valve opening and closing control unit 12 on the basis of the measured pressure signal 13 sends an opening amount indicating signal 14 to the refrigerant gas introducing valve 10, the opening degree of the refrigerant gas introducing valve 10 adjusted to the refrigerant gas 9 in the gap 6
の圧力が一定になるように制御する。 Controlled such that the pressure is constant.

【0006】 [0006]

【発明が解決しようとする課題】従来の半導体ウエハ冷却装置は以上のように構成され、圧力測定器11はガス導入路8の途中に1個所しか設けられていないため、O Since is configured THE INVENTION Problems to be Solved the above conventional semiconductor wafer cooling device, a pressure measuring device 11 is provided only at one position in the middle of the gas introduction passage 8, O
リング4の部分から冷媒ガス9の漏れが起こっている場合には、圧力測定器11で測定されるガス導入路8内の冷媒ガス9の圧力を一定に制御しても、冷媒ガス9の漏れが起こっている部分に近い半導体ウエハ5の裏面では、冷媒ガス9の圧力が低下し冷却能力が低下する。 If the leakage of refrigerant gas 9 is going from part of the ring 4 also controls the pressure of the refrigerant gas 9 in the gas introducing path 8, which is measured by the pressure measuring device 11 constant, leakage of the refrigerant gas 9 is the back surface of the semiconductor wafer 5 is close to the part is going, the pressure of the refrigerant gas 9 is lowered reduced cooling capacity. この冷却能力の低下は冷媒ガス9の漏れ量が多い場合やガス導入路8の径が細い場合に著しくなり、これが原因で起こる半導体ウエハ5毎の温度差によりエッチング特性や成膜特性に差が生じたり、半導体ウエハ5にダメージを与えたりして、製品品質にバラツキが発生するという問題点があった。 This decrease in cooling capacity becomes remarkable when the diameter of the often leakage of refrigerant gas 9 and the gas introduction passage 8 are thin, which is a difference in etching characteristics and film formation characteristics due to the temperature difference of each of the semiconductor wafer 5 which occurs due occur or, with or damage to the semiconductor wafer 5, variations in product quality there has been a problem that occurs.

【0007】この発明は上記のような問題点を解消するためになされたもので、冷却能力を常に一定に保持することにより、製品品質のバラツキを防止することができる半導体ウエハ冷却装置を提供することを目的とするものである。 [0007] The present invention has been made to solve the above problems, by maintaining the cooling capacity is always constant, to provide a semiconductor wafer cooling device capable of preventing the variation in product quality it is an object of the present invention.

【0008】 [0008]

【課題を解決するための手段】この発明に係る半導体ウエハ冷却装置は、真空チャンバー内に設けられ半導体ウエハを所定の間隙を介して支持するステージと、間隙内へガス導入路を介して所定量の冷媒ガスを導入する冷媒ガス導入バルブと、ガス導入路内に設けられガス導入路内に圧力差を発生させる圧力差発生手段と、この圧力差発生手段の前後にそれぞれ設けられガス導入路内のそれぞれの位置の圧力を測定する第1および第2の圧力測定器と、これら第1および第2の圧力測定器でそれぞれ測定される各圧力値および圧力差によって冷媒ガス導入バルブの開閉量を調節して間隙内の圧力を一定に制御する圧力制御手段とを備えたものである。 SUMMARY OF THE INVENTION The semiconductor wafer cooling device according to the present invention, a stage for supporting a predetermined gap semiconductor wafer is provided in a vacuum chamber, a predetermined amount through a gas introduction passage into the gap a refrigerant gas introducing valve for introducing the refrigerant gas, and the pressure differential generating means for generating a pressure difference in the gas introduction path provided in the gas introduction passage, respectively provided a gas introduction path before and after the pressure difference-generating means first and second pressure measuring device for measuring the pressure in the respective positions of the opening and closing amount of the refrigerant gas inlet valve by the pressure value and the pressure difference measured respectively in these first and second pressure measuring device adjusted to those having a pressure control means for controlling the pressure in the gap constant.

【0009】 [0009]

【作用】この発明における半導体ウエハ冷却装置のバルブ開閉制御器は、ガス導入路内に形成される圧力差発生手段前後で測定される圧力と圧力差によって、半導体裏面の間隙内の冷媒ガスの圧力を予測し、この予測圧力が一定となるように、冷媒ガス導入バルブの開閉量を制御する。 [Action] valve opening and closing controller of a semiconductor wafer cooling device of this invention, the pressure and the pressure difference measured before and after the pressure difference-generating means formed in the gas introducing path, the pressure of the refrigerant gas semiconductor back in the gap It predicts, as the predicted pressure is constant, controls the opening and closing amount of the refrigerant gas inlet valve.

【0010】 [0010]

【実施例】実施例1 以下、この発明の実施例を図について説明する。 EXAMPLE 1 A description is given of a preferred embodiment of the present invention. 図1はこの発明の実施例1における半導体ウエハ冷却装置が適用された半導体ウエハ真空処理装置の概略構成を示す図である。 Figure 1 is a diagram showing a schematic configuration of a semiconductor wafer vacuum processing apparatus in which the semiconductor wafer cooling device is applied in the first embodiment of the present invention. 図において、真空チャンバー1、導入口1a、 In the figure, the vacuum chamber 1, inlet 1a,
反応ガス2、ステージ3、Oリング4、半導体ウエハ5、間隙6、電極7、ガス導入路8、冷媒ガス9および冷媒ガス導入バルブ10は図3に示す従来装置におけるものと同様である。 Reaction gas 2, stage 3, O-ring 4, the semiconductor wafer 5, the gap 6, the electrode 7, the gas introduction passage 8, the refrigerant gas 9 and the refrigerant gas introducing valve 10 is the same as in the conventional apparatus shown in FIG.

【0011】21はガス導入路8内に形成される圧力差発生手段としてのオリフイス、22はこのオリフイス2 [0011] 21 orifice as a pressure difference generating means formed in the gas introducing path 8, 22 the orifice 2
1の冷媒ガス9の流れの下流側に接続され圧力を測定する第1の圧力測定器、23はオリフイス21の冷媒ガス9の流れの上流側に接続され圧力を測定する第2の圧力測定器、24はこれら第1および第2の圧力測定器2 The first pressure measuring device for measuring a connected pressure on the downstream side of the first flow of the refrigerant gas 9, 23 and the second pressure measuring device for measuring the pressure is connected to the upstream side of the flow of the refrigerant gas 9 of the orifice 21 , 24 first and second pressure measuring device 2
2,23によってそれぞれ測定され、出力される各測定圧力信号25,26に基づいて、冷媒ガス導入バルブ1 Measured respectively by 2,23, based on the measured pressure signals 25 and 26 outputted, the refrigerant gas inlet valve 1
0へ開閉量指示信号27を送出して、ガス導入路8内に導入される冷媒ガス9の流量を制御するバルブ開閉制御器である。 0 by sending the opening amount indicating signal 27 to a valve opening and closing controller for controlling the flow rate of the refrigerant gas 9 introduced into the gas introducing passage 8. そして、これら間隙6、ガス導入路8、冷媒ガス9、冷媒ガス導入バルブ10、オリフイス21、第1の圧力測定器22、第2の圧力測定器23およびバルブ開閉制御器24で半導体ウエハ冷却装置30を構成している。 Then, these gaps 6, the gas introducing path 8, the refrigerant gas 9, the refrigerant gas introducing valve 10, orifice 21, a first pressure measuring device 22, the second pressure measuring device 23 and the semiconductor wafer cooling device in the valve opening and closing control unit 24 constitute a 30.

【0012】次に、上記のように構成されるこの発明の実施例1における半導体ウエハ冷却装置30の動作について説明する。 [0012] Next, the operation of the semiconductor wafer cooling device 30 according to the first embodiment of the present invention constructed as described above. 図2(A)は図1における半導体ウエハ冷却装置30のガス導入路8の詳細を示す拡大断面図、 2 (A) is an enlarged sectional view showing details of the gas introducing path 8 of the semiconductor wafer cooling device 30 in FIG. 1,
図2(B)は図2(A)の各部に対応した冷媒ガス流系の等価回路図であり、図中、Iはガス導入路8内を流れる冷媒ガス9の流量、P 1は第1の圧力測定器22で測定される圧力値、P 2は第2の圧力測定器23で測定される圧力値、Pは半導体ウエハ5の裏面に形成される間隙6内の圧力値、R 0はオリフイス21の流路抵抗、R 1 FIG. 2 (B) is an equivalent circuit diagram of the refrigerant gas flow system corresponding to the respective parts of FIG. 2 (A), in the figure, I is the flow rate of the refrigerant gas 9 flowing in the gas inlet passage 8, P 1 is the first pressure value measured by the pressure measuring device 22 of, P 2 is the pressure value measured by the second pressure measuring device 23, the pressure value of the gap within 6 P is formed on the back surface of the semiconductor wafer 5, R 0 is flow resistance of the orifice 21, R 1
はガス道入路8内の流路抵抗、R 2はOリング4部からの冷媒ガス9の漏れ流路抵抗をそれぞれ表す。 Respectively represent the flow resistance in the gas path entrance road 8, R 2 is the leakage flow path resistance of the refrigerant gas 9 from the O-ring 4 parts.

【0013】まず、図2(B)に示す等価回路から次式が成立する。 [0013] First, the following equation is established from the equivalent circuit shown in FIG. 2 (B). 2 −P 1 =R 0 I・・・・・・・・・・・(1) P 1 −P=R 1 I ・・・・・・・・・・・(2) 上記式(1)、(2)よりIを消去してPについて整理すると、 P=P 1 −R 1 /R 0 (P 2 −P 1 )・・・・(3) が得られる。 P 2 -P 1 = R 0 I ··········· (1) P 1 -P = R 1 I ··········· (2) the formula (1) and rearranging the P to erase I from (2), P = P 1 -R 1 / R 0 (P 2 -P 1) ···· (3) is obtained. この式(3)より、圧力Pを一定に制御するためには、第1の圧力測定器22で測定される圧力値P 1から、オリフイス21の前後で第1および第2の圧力測定器22,23で測定される圧力値の差(P 2 From this equation (3), in order to control the pressure P constant, the pressure value P 1 measured by the first pressure measuring device 22, first and second pressure measuring device before and after the orifice 21 22 , the difference between the pressure value measured by 23 (P 2 -
1 )に係数R 1 /R 0を乗じた値を差し引いた値が一定となるように制御すれば良いことがわかる。 P 1) in it can be seen that the value obtained by subtracting the value obtained by multiplying the coefficient R 1 / R 0 may be controlled to be constant.

【0014】又、係数R 1 /R 0は、半導体ウエハ5がステージ3上に載置されていない状態(圧力P=0とみなせる)にて、第1および第2の圧力測定器22,23でそれぞれの位置の圧力値P 1 ,P 2を測定することによって容易に得られる。 [0014] Also, the coefficient R 1 / R 0 is in a state where the semiconductor wafer 5 is not placed on the stage 3 (regarded as a pressure P = 0), the first and second pressure measuring device 22, 23 in readily obtained by measuring the pressure values P 1, P 2 of the respective positions. すなわち、上記各圧力値P 1 ,P 2をP 10 ,P 20とすると、式(3)は 0=P 10 −R 1 /R 0 (P 20 −P 10 )・・・(4) となり、式4を整理すると、 R 1 /R 0 =P 10 /P 20 −P 10・・・・・・(5) となり、式5として求めることができる。 That is, when the respective pressure values P 1, P 2 and P 10, P 20, Equation (3) is 0 = P 10 -R 1 / R 0 (P 20 -P 10) ··· (4) , and the Rearranging equation 4, R 1 / R 0 = P 10 / P 20 -P 10 ······ (5) , and the can be obtained as equation 5.

【0015】したがって、バルブ開閉制御器24は第1 [0015] Thus, the valve opening and closing control unit 24 first
および第2の圧力測定器22,23からの各測定圧力信号25,26と、予め式(5)によって求められる係数とを基に、式3に示される間隙6内の圧力Pが常に一定になるように、冷媒ガス導入バルブ10へ開閉量指示信号を送出して、冷媒ガス導入バルブ10の開度を調節することにより、ガス導入路8内に導入される冷媒ガス9 And and each measured pressure signals 25 and 26 from the second pressure measuring device 22 and 23, in advance based on the coefficient obtained by the equation (5), the constant pressure P in the gap 6 shown in Equation 3 is always so that, by sending the opening amount command signal to the refrigerant gas introducing valve 10, by adjusting the opening degree of the refrigerant gas introducing valve 10, the refrigerant gas 9 introduced into the gas introducing passage 8
の流量を制御すれば、間隙6内に裏面が隣接される半導体ウエハ5は常に一定能力で冷却されるので個々でエッチング特性や成膜特性に差が生じることはなくなる。 By controlling the flow rate will not be because the semiconductor wafer 5 which back surface is adjacent always cooled at a fixed capacity that is a difference in etching characteristics and film formation properties individually occur in the gap 6.

【0016】実施例2 尚、上記実施例1では圧力差発生手段としてオリフイス21を示して説明したが、ニードルバルブ等のように流路抵抗を持つものであれば何でも良く、上記実施例1と同様の効果を奏する。 [0016] Example 2 In addition, has been described with reference to the first embodiment orifices 21 as the pressure difference generating means in anything as long as it has a flow resistance as such needle valve, as in Example 1 the same effects.

【0017】 [0017]

【発明の効果】以上のように、この発明によれば真空チャンバー内に設けられ半導体ウエハを所定の間隙を介して支持するステージと、間隙内へガス導入路を介して所定量の冷媒ガスを導入する冷媒ガス導入バルブと、ガス導入路内に設けられガス導入路内に圧力差を発生させる圧力差発生手段と、この圧力差発生手段の前後にそれぞれ設けられガス導入路内のそれぞれの位置の圧力を測定する第1および第2の圧力測定器と、これら第1および第2の圧力測定器でそれぞれ測定される各圧力値および圧力差によって冷媒ガス導入バルブの開閉量を調節して間隙内の圧力を一定に制御する圧力制御手段とを備えたので、冷却能力を常に一定に保持して、製品品質のバラツキを防止することができる半導体ウエハ冷却装置を提供することを目的 As it is evident from the foregoing description, a stage for supporting a predetermined gap semiconductor wafer is provided in a vacuum chamber according to the present invention, a predetermined amount of the refrigerant gas through the gas introduction passage into the gap a refrigerant gas introducing valve for introducing a pressure differential generating means for generating a pressure differential provided the gas introduction passage into the gas introduction path, the respective positions of the provided gas inlet passage respectively before and after the pressure difference-generating means first and second pressure measuring device, by adjusting the opening amount of the refrigerant gas introduction valve at the first and second pressure measuring device by the pressure value and the pressure difference measured respectively gaps for measuring the pressure since the pressure of the inner and a pressure control means for controlling the constant aim of holding the cooling capacity is always constant, to provide a semiconductor wafer cooling device capable of preventing the variation in product quality するものである。 It is intended to.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】この発明の実施例1における半導体ウエハ冷却装置が適用された半導体ウエハ真空処理装置の概略構成を示す図である。 1 is a diagram showing a schematic configuration of a semiconductor wafer vacuum processing apparatus in which the semiconductor wafer cooling device is applied in the first embodiment of the present invention.

【図2】図2(A)は図1における半導体ウエハ冷却装置のガス導入路の詳細を示す拡大断面図、図2(B)は図2(A)の各部に対応した冷媒ガス流系の等価回路図である。 [2] Figure 2 (A) is an enlarged sectional view showing details of the gas introducing path of the semiconductor wafer cooling device of FIG. 1, FIG. 2 (B) Figure 2 each unit of the refrigerant gas flow system corresponding to the (A) it is an equivalent circuit diagram.

【図3】従来の半導体ウエハ冷却装置が適用された半導体ウエハ真空処理装置の概略構成を示す図である。 3 is a diagram showing a schematic configuration of a conventional semiconductor wafer vacuum processing apparatus in which the semiconductor wafer cooling device is applied.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 真空チャンバー 3 ステージ 5 半導体ウエハ 6 間隙 7 電極 8 ガス導入路 9 冷媒ガス 10 冷媒ガス導入バルブ 21 オリフイス(圧力差発生手段) 22 第1の圧力測定器 23 第2の圧力測定器 24 バルブ開閉制御器(圧力制御手段) 30 半導体ウエハ冷却装置 1 vacuum chamber 3 stage 5 semiconductor wafer 6 gap 7 electrode 8 gas inlet passage 9 refrigerant gas 10 refrigerant gas introducing valve 21 orifice (pressure difference generator) 22 first pressure measuring device 23 and the second pressure meter 24 valve opening and closing control vessel (pressure control means) 30 semiconductor wafer cooling device

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 真空チャンバー内に設けられ半導体ウエハを所定の間隙を介して支持するステージと、上記間隙内へガス導入路を介して所定量の冷媒ガスを導入する冷媒ガス導入バルブと、上記ガス導入路内に設けられ上記ガス導入路内に圧力差を発生させる圧力差発生手段と、 And 1. A stage for supporting a semiconductor wafer provided in the vacuum chamber via a predetermined gap, the refrigerant gas introducing valve for introducing a predetermined amount of the refrigerant gas through the gas introduction passage into the gap, the a pressure difference generating means for generating a pressure difference to the gas introduction passage provided in the gas introduction passage,
    この圧力差発生手段の前後にそれぞれ設けられ上記ガス導入路内のそれぞれの位置の圧力を測定する第1および第2の圧力測定器と、これら第1および第2の圧力測定器でそれぞれ測定される各圧力値および圧力差によって上記冷媒ガス導入バルブの開閉量を調節して上記間隙内の圧力を一定に制御する圧力制御手段とを備えたことを特徴とする半導体ウエハ冷却装置。 First and second pressure measuring device for measuring the pressure in the respective positions of the gas introducing path provided respectively before and after the pressure difference generating means, are respectively measured by the first and second pressure measuring device semiconductor wafer cooling device being characterized in that a pressure control means for controlling the pressure constant in the regulation to the gap opening and closing amount of the refrigerant gas introducing valve by the pressure values ​​and pressure differences that.
JP28116291A 1991-10-28 1991-10-28 Semiconductor wafer cooler Pending JPH05121361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28116291A JPH05121361A (en) 1991-10-28 1991-10-28 Semiconductor wafer cooler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28116291A JPH05121361A (en) 1991-10-28 1991-10-28 Semiconductor wafer cooler

Publications (1)

Publication Number Publication Date
JPH05121361A true true JPH05121361A (en) 1993-05-18

Family

ID=17635220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28116291A Pending JPH05121361A (en) 1991-10-28 1991-10-28 Semiconductor wafer cooler

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Country Link
JP (1) JPH05121361A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6012509A (en) * 1996-06-04 2000-01-11 Tokyo Electron Limited Mechanism and method for holding a substrate on a substrate stage of a substrate treatment apparatus
US6059891A (en) * 1997-07-23 2000-05-09 Tokyo Electron Limited Apparatus and method for washing substrate
US6115867A (en) * 1997-08-18 2000-09-12 Tokyo Electron Limited Apparatus for cleaning both sides of substrate
US6431184B1 (en) 1997-08-05 2002-08-13 Tokyo Electron Limited Apparatus and method for washing substrate
JP2013191882A (en) * 2007-01-26 2013-09-26 Hitachi Kokusai Electric Inc Substrate processing method, method of manufacturing semiconductor device, and semiconductor manufacturing apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6012509A (en) * 1996-06-04 2000-01-11 Tokyo Electron Limited Mechanism and method for holding a substrate on a substrate stage of a substrate treatment apparatus
US6059891A (en) * 1997-07-23 2000-05-09 Tokyo Electron Limited Apparatus and method for washing substrate
US6431184B1 (en) 1997-08-05 2002-08-13 Tokyo Electron Limited Apparatus and method for washing substrate
US6115867A (en) * 1997-08-18 2000-09-12 Tokyo Electron Limited Apparatus for cleaning both sides of substrate
US6276378B1 (en) 1997-08-18 2001-08-21 Tokyo Electron Limited Apparatus for cleaning both sides of substrate
JP2013191882A (en) * 2007-01-26 2013-09-26 Hitachi Kokusai Electric Inc Substrate processing method, method of manufacturing semiconductor device, and semiconductor manufacturing apparatus

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