CN110565061A - 一种环保型直接在易氧化金属镀膜的工艺 - Google Patents
一种环保型直接在易氧化金属镀膜的工艺 Download PDFInfo
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Abstract
本发明涉及一种环保型直接在易氧化金属镀膜的工艺,分为以下几个步骤:1)工件脱脂清洁;2)固定与镀件夹具;3)抽真空;4)偏压等离子体清洁;5)离子源等离子清洁;6)TFMG植入层;7)TFMG保护层;8)装饰性或功能性目标涂层;通过金属玻璃具有致密、疏水性佳,耐蚀性佳的特性,可以作为保护基材的保护涂层。
Description
技术领域
本发明涉及一种镀膜工艺,尤其涉及一种环保型直接在易氧化金属镀膜的工艺。
背景技术
铝合金与铜合金广泛使用于金属制,但因为其易氧化性,未来保持良好的耐腐蚀性与镀层附着力,一般皆需要先经过电镀制程保护,使得这类产品镀膜时受到限制。
发明内容
对上述现有技术的现状,本发明所要解决的技术问题在于提供一种利用HiPIMS高能量密度溅射制作金属玻璃(TFMG)保护层,加上装饰性或功能性镀层,实现在易氧化金属直接在单一真空镀膜设备完成镀膜的工艺。
本发明解决上述技术问题所采用的技术方案为:一种环保型直接在易氧化金属镀膜的工艺,分为以下几个步骤:
1)工件脱脂清洁;
2)固定与镀件夹具;
3)抽真空;
4)偏压等离子体清洁;
5)离子源等离子清洁;
6)TFMG植入层;
7)TFMG保护层;
8)装饰性或功能性目标涂层。
工件放入镀膜室中抽真空,启动工件转架旋转,待真空抽至3.0帕,启动加热起至适当当温度(150-200度),待镀膜室压力小于6x10-3帕时,开始制程,加氩气至2帕,依序调整电压电压400-800V产生等离子做工件表面清洁,10-15分钟;接着开启离子源,做进一步的清洁与清除易氧化金属表面之氧化层;之后关闭离子源,通入氩气开启HIPIMS溅射源。同时启动镀件偏压,此时用高电场偏压500-1000V,之后调降偏压至80-150V,开始制作保护层,厚度约100-300nm,依耐腐蚀要求而定;之后关闭HIPIMS溅射靶,再依照常规进行所需要的涂层.电弧靶或中频溅射靶。如此可以再单一真空室完成易氧化金属的环保型镀膜工艺。
与现有技术相比,本发明的优点在于:本发明通过金属玻璃具有致密、疏水性佳,耐蚀性佳的特性,可以作为保护基材的保护涂层,同时启动镀件偏压,此时用高电场偏压500-1000V,目的有两目的,一方面是让TFMG粒子撞击基材表面,进一步清除氧化层,另外一方面植入基材表面,紧密的与基材结合,本发明设计合理,可大规模推广。
附图说明
图1为本发明一种环保型直接在易氧化金属镀膜的工艺实验设备示意图一;
图2为本发明一种环保型直接在易氧化金属镀膜的工艺实验设备示意图二。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图,对本发明进行进一步详细说明。
本发明所使用的实验设备如图1所示。其中,1为真空镀层室;2为柱状磁控溅射靶组件;3为抽气管道;4为阴极电弧蒸发源;5为加热器;6为工转架;7为挂具;8为N2充气系统;9为偏压装置。
实施例一
一种利用HIPIMS溅射金属玻璃结合多弧离子镀直接镀膜于易氧化金属上的工艺:
1.取铜材先进行水性脱脂清洗,清洗后冷风吹干;
2.置入与真空镀膜设备中,开始抽气,待压力小于3 Pa时,开启加热150度烘烤;30分钟之后继续抽气,待基础真空压力低于5*10-3帕后,开始以下流程;
3.通入氩气真空度达1-2Pa时,开启偏压,电压由450V,逐步升高至1000V,进行离子轰击清洁表面。总时间15-20分钟,之后关闭偏压;
4.通入氩气2-3 *10-1Pa,开启偏压,设定400-450V,开启HIPIMS溅射电源,靶材可以是锆基金属玻璃(或其他金属玻璃靶材)5-10分钟,然后降低偏压至80-150V,镀膜30-60分钟,依耐蚀性要求而定。至此易氧化金属之保护层已完成;
5.开启阴极电弧,开启偏压100-150V,进行多弧打底层,偏压勿太高,以免破坏保护层;
6.依常规通入反应气体,制作所需的装饰镀颜色涂层。
实施例二
一种利用HIPIMS溅射金属玻璃结合多弧离子镀直接镀膜于易氧化金属上的工艺 (增加离子源):
1.取铜材先进行水性脱脂清洗,清洗后冷风吹干;
2.置入与真空镀膜设备中,开始抽气,待压力小于3Pa时,开启加热150度烘烤30分钟,之后继续抽气,待基础真空压力低于5*10-3帕后,开始以下流程;
3.通入氩气真空度达1-2Pa时,开启便压,电压由450V,逐步升高至1000V,进行离子轰击清洁表面。总时间15-20分钟。之后关闭偏压;
4.关闭氩气,待压力低于基础真空以下后,加入氩起至真空度3-5*10-1Pa,开启离子源(霍尔离子源,考夫曼离子源),进行离子轰击,20-30分钟, 之后关闭离子源,关闭氩气,待压力小于基础真空后继续下列步骤;
5.通入氩气2-3 *10-1Pa,开启偏压,设定400-450V,开启HIPIMS溅射电源,靶材可以是锆基,钛基,5-10分钟,然后降低偏压至80-150V,镀膜30-60分钟,依耐蚀性要求而定。至此易氧化金属之保护层已完成;
6.开启阴极电弧,开启偏压100-150V,进行多弧打底层,偏压勿太高,以免破坏保护层;
7.依常规通入反应气体,制作所需的装饰镀颜色涂层。
与现有技术相比,本发明的优点在于:本发明通过金属玻璃具有致密、疏水性佳,耐蚀性佳的特性,可以作为保护基材的保护涂层,同时启动镀件偏压,此时用高电场偏压500-1000V,目的有两目的,一方面是让TFMG粒子撞击基材表面,进一步清除氧化层,另外一方面植入基材表面,紧密的与基材结合,本发明设计合理,可大规模推广。
Claims (6)
1.一种环保型直接在易氧化金属镀膜的工艺,其特征在于,包括一下步骤:
工件脱脂清洁;
固定与镀件夹具;
抽真空;
偏压等离子体清洁;
离子源等离子清洁;
TFMG植入层;
TFMG保护层;
装饰性或功能性目标涂层。
2.根据权利要求1所述的一种环保型直接在易氧化金属镀膜的工艺,其特征在于,具体包括如下步骤:工件放入镀膜室中抽真空,启动工件转架旋转,待真空抽至3.0帕,启动加热起至适当温度,待真空度大6x10-3帕时,开始制程;加氩气至2帕,依序调整电压产生等离子做工件表面清洁,10-15分钟;接着开启离子源,做进一步的清洁与清除易氧化金属表面支氧化层;之后关闭离子源,通入氩气开启HIPIMS溅射源;同时启动镀件偏压,之后调降偏压,开始制作保护层;之后关闭HIPIMS溅射靶,再依照常规进行所需要的涂层,电弧靶或中频溅射靶。
3.根据权利要求2所述的一种环保型直接在易氧化金属镀膜的工艺,其特征在于,所述依序调整电压为400-800V。
4.根据权利要求2所述的一种环保型直接在易氧化金属镀膜的工艺,其特征在于,所述适当温度为0-200度。
5.根据权利要求2所述的一种环保型直接在易氧化金属镀膜的工艺,其特征在于,所述镀件偏压开始时高电场偏压为500-1000V,之后调降偏压至80-150V。
6.根据权利要求2所述的一种环保型直接在易氧化金属镀膜的工艺,其特征在于,所述保护层厚度约100-300nm。
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