CN110561200A - quartz wafer processing technology - Google Patents
quartz wafer processing technology Download PDFInfo
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- CN110561200A CN110561200A CN201910713910.7A CN201910713910A CN110561200A CN 110561200 A CN110561200 A CN 110561200A CN 201910713910 A CN201910713910 A CN 201910713910A CN 110561200 A CN110561200 A CN 110561200A
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- wafer
- wafers
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- cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a quartz wafer processing technology, which relates to the field of electronic element processing technologies and comprises the following steps: polishing a silicon crystal bar and then cutting the silicon crystal bar into wafers with the thickness of 0.25-0.45 mm; soaking the cut wafer in sodium hydroxide solution with pH value of 7-9 for 1-3s, taking out, cleaning with clear water for 3 times, and drying at 80-90 deg.C; soaking the wafer in hydrochloric acid solution with pH of 4.5-6 for 60s, taking out, cleaning with clear water for 3 times, and drying at 80-90 deg.C; carrying out initial frequency measurement on the dried wafers, and selecting the wafers with similar frequencies; coating two layers of protective materials on the surface of the screened wafer; connecting and fixing the wafer with a base through glue and polishing; soaking the polished wafer into hydrochloric acid solution with the pH value of 4.5-6 for 60s, taking out, cleaning for 3 times with clear water, and drying at 80-90 ℃; boiling the wafer, and drying at 60-70 ℃; and (4) measuring the frequency of the dried wafers again, and selecting the wafers with similar frequencies to carry out nitrogen sealing. The invention has high precision and can save cost.
Description
Technical Field
The invention belongs to the field of electronic element processing technology, and particularly relates to a quartz wafer processing technology.
background
The chemical composition of the quartz crystal is SiO2The crystal belongs to oxide minerals of trigonal system, namely low temperature quartz (a-quartz), and is one of the most widely distributed minerals in the quartz family. In general, a linear cutting machine is used for cutting a crystal block and a plane grinder is used for grinding the cut crystal block, a quartz wafer original piece is prone to suffering from the phenomena of uneven wafer thickness and large frequency difference caused by impact force, production resources are wasted, and cost is increased.
therefore, it is highly desirable to provide a quartz wafer processing technique with high precision and low cost.
Disclosure of Invention
The invention aims to provide a quartz wafer processing technology aiming at the defects of the prior art.
The invention provides the following technical scheme:
a quartz wafer processing technology comprises the following steps:
S1, polishing a silicon crystal bar and then cutting the silicon crystal bar into wafers with the thickness of 0.25-0.45 mm;
S2, soaking the cut wafer into a sodium hydroxide solution with the pH value of 7-9 for 1-3s, then fishing out, cleaning for 3 times by using clear water, and drying at the temperature of 80-90 ℃;
S3, soaking the wafer into a hydrochloric acid solution with the pH value of 4.5-6 for 60s, then fishing out, cleaning for 3 times by using clear water, and drying at the temperature of 80-90 ℃;
S4, carrying out initial frequency measurement on the dried wafers, and selecting wafers with similar frequencies;
s5, coating two layers of materials on the surface of the screened wafer;
S6, connecting, fixing and polishing the wafer and the base through glue;
S7, soaking the polished wafer into a hydrochloric acid solution with the pH value of 4.5-6 for 60s, fishing out, cleaning for 3 times by using clear water, and drying at the temperature of 80-90 ℃;
S8, boiling the wafer, and drying at the temperature of 60-70 ℃;
and S9, measuring the frequency of the dried wafers again, and selecting the wafers with similar frequencies to carry out nitrogen sealing.
preferably, the thickness of the wafer in step S1 is 0.35 mm.
preferably, in step S2, the cut wafer is soaked in a sodium hydroxide solution with a pH of 8 for 2S, then fished out, washed 3 times with clean water, and dried at 85 ℃.
Preferably, in step S3, the wafer is soaked in a hydrochloric acid solution with a pH value of 5.5 for 60S, then fished out, washed 3 times with clean water, and dried at 85 ℃.
Preferably, the protective material in step S5 is metallic silver.
preferably, in step S7, the polished wafer is soaked in a hydrochloric acid solution with a pH of 6 for 60S, then fished out, washed 3 times with clean water, and dried at 85 ℃.
Preferably, in step S8, the wafer is boiled and dried at 65 ℃.
The invention has the beneficial effects that: after cutting and polishing, alkali cleaning and acid cleaning are sequentially carried out, so that the accuracy of initial measurement frequency can be improved, and materials can be conveniently coated; the coating of the material can increase the accuracy of the wafer frequency and save the cost.
Detailed Description
example 1
a quartz wafer processing technology comprises the following steps:
s1, polishing a silicon crystal bar and then cutting the silicon crystal bar into wafers with the thickness of 0.25 mm;
s2, soaking the cut wafer into a sodium hydroxide solution with the pH value of 7 for 1s, then fishing out, cleaning for 3 times by using clear water, and drying at 80 ℃;
S3, soaking the wafer into a hydrochloric acid solution with the pH value of 4.5 for 60s, then fishing out, cleaning for 3 times by using clear water, and drying at 80 ℃;
s4, carrying out initial frequency measurement on the dried wafers, and selecting wafers with similar frequencies;
S5, coating two layers of materials on the surface of the screened wafer;
s6, connecting, fixing and polishing the wafer and the base through glue;
s7, soaking the polished wafer into a hydrochloric acid solution with the pH value of 4.5 for 60s, fishing out, cleaning for 3 times by using clear water, and drying at 80 ℃;
S8, boiling the wafer, and drying at 60 ℃;
And S9, measuring the frequency of the dried wafers again, and selecting the wafers with similar frequencies to carry out nitrogen sealing.
Example 2
A quartz wafer processing technology comprises the following steps:
s1, polishing a silicon crystal bar and then cutting the silicon crystal bar into wafers with the thickness of 0.35 mm;
s2, soaking the cut wafer into a sodium hydroxide solution with the pH value of 8 for 2s, then fishing out, cleaning for 3 times by using clear water, and drying at 85 ℃;
s3, soaking the wafer into a hydrochloric acid solution with the pH value of 5.5 for 60s, then fishing out, cleaning for 3 times by using clear water, and drying at 85 ℃;
s4, carrying out initial frequency measurement on the dried wafers, and selecting wafers with similar frequencies;
S5, coating two layers of materials on the surface of the screened wafer;
s6, connecting, fixing and polishing the wafer and the base through glue;
S7, soaking the polished wafer into a hydrochloric acid solution with the pH value of 6 for 60s, fishing out, cleaning for 3 times by using clear water, and drying at 85 ℃;
s8, boiling the wafer, and drying at 65 ℃;
and S9, measuring the frequency of the dried wafers again, and selecting the wafers with similar frequencies to carry out nitrogen sealing.
Example 3
A quartz wafer processing technology comprises the following steps:
s1, polishing a silicon crystal bar and then cutting the silicon crystal bar into wafers with the thickness of 0.45 mm;
s2, soaking the cut wafer into a sodium hydroxide solution with the pH value of 9 for 3s, then fishing out, cleaning for 3 times by using clear water, and drying at 90 ℃;
s3, soaking the wafer into a hydrochloric acid solution with the pH value of 6 for 60s, then fishing out, cleaning for 3 times by using clear water, and drying at 90 ℃;
S4, carrying out initial frequency measurement on the dried wafers, and selecting wafers with similar frequencies;
s5, coating two layers of materials on the surface of the screened wafer;
s6, connecting, fixing and polishing the wafer and the base through glue;
s7, soaking the polished wafer into a hydrochloric acid solution with the pH value of 5.5 for 60s, fishing out, cleaning for 3 times by using clear water, and drying at 90 ℃;
s8, boiling the wafer, and drying at 70 ℃;
and S9, measuring the frequency of the dried wafers again, and selecting the wafers with similar frequencies to carry out nitrogen sealing.
although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A quartz wafer processing technology is characterized by comprising the following steps:
s1, polishing a silicon crystal bar and then cutting the silicon crystal bar into wafers with the thickness of 0.25-0.45 mm;
s2, soaking the cut wafer into a sodium hydroxide solution with the pH value of 7-9 for 1-3s, then fishing out, cleaning for 3 times by using clear water, and drying at the temperature of 80-90 ℃;
s3, soaking the wafer into a hydrochloric acid solution with the pH value of 4.5-6 for 60s, then fishing out, cleaning for 3 times by using clear water, and drying at the temperature of 80-90 ℃;
S4, carrying out initial frequency measurement on the dried wafers, and selecting wafers with similar frequencies;
s5, coating two layers of protective materials on the surfaces of the screened wafers;
S6, connecting, fixing and polishing the wafer and the base through glue;
S7, soaking the polished wafer into a hydrochloric acid solution with the pH value of 4.5-6 for 60s, fishing out, cleaning for 3 times by using clear water, and drying at the temperature of 80-90 ℃;
s8, boiling the wafer, and drying at the temperature of 60-70 ℃;
And S9, measuring the frequency of the dried wafers again, and selecting the wafers with similar frequencies to carry out nitrogen sealing.
2. the process of claim 1, wherein the wafer has a thickness of 0.35mm in step S1.
3. the process of claim 1, wherein in step S2, the wafer after being cut is soaked in a sodium hydroxide solution with pH of 8 for 2S, then fished out, washed 3 times with clean water, and dried at 85 ℃.
4. the process of claim 1, wherein the wafer is immersed in the hydrochloric acid solution with pH 5.5 for 60S in step S3, then taken out, washed 3 times with clean water, and dried at 85 ℃.
5. the process of claim 1, wherein the protective material in step S5 is silver metal.
6. the process of claim 1, wherein in step S7, the polished wafer is soaked in hydrochloric acid solution with pH 6 for 60S, then fished out, washed with clean water for 3 times, and dried at 85 ℃.
7. the process of claim 1, wherein the wafer is boiled and dried at 65 ℃ in step S8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910713910.7A CN110561200A (en) | 2019-08-02 | 2019-08-02 | quartz wafer processing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910713910.7A CN110561200A (en) | 2019-08-02 | 2019-08-02 | quartz wafer processing technology |
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| CN110561200A true CN110561200A (en) | 2019-12-13 |
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| CN201910713910.7A Pending CN110561200A (en) | 2019-08-02 | 2019-08-02 | quartz wafer processing technology |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113414890A (en) * | 2021-06-08 | 2021-09-21 | 江苏富乐德石英科技有限公司 | Processing method of quartz product for vacuum sealing |
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2019
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113414890A (en) * | 2021-06-08 | 2021-09-21 | 江苏富乐德石英科技有限公司 | Processing method of quartz product for vacuum sealing |
| CN113414890B (en) * | 2021-06-08 | 2022-04-19 | 江苏富乐德石英科技有限公司 | Processing method of quartz product for vacuum sealing |
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Application publication date: 20191213 |
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