CN105751054A - Quartz wafer processing technology - Google Patents
Quartz wafer processing technology Download PDFInfo
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- CN105751054A CN105751054A CN201610133039.XA CN201610133039A CN105751054A CN 105751054 A CN105751054 A CN 105751054A CN 201610133039 A CN201610133039 A CN 201610133039A CN 105751054 A CN105751054 A CN 105751054A
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- quartz wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B31/00—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor
- B24B31/02—Machines or devices designed for polishing or abrading surfaces on work by means of tumbling apparatus or other apparatus in which the work and/or the abrasive material is loose; Accessories therefor involving rotary barrels
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- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention is applicable to the field of electronic component processing technologies and provides a quartz wafer processing technology. The technology comprises the following steps: covering a film, namely coating a middle area of a quartz wafer with a protective material; processing, namely arranging the quartz wafer, abrasive sand, a steel ball and water in a roller, and starting the roller to rotate, thereby finishing processing; and removing the film, namely removing the protective material on the quartz wafer. According to the technology disclosed by the invention, the processing period of the quartz wafer is shortened, the production cost is reduced, and the performance of the quartz wafer is not influenced. In addition, the processing technology disclosed by the invention is easy to operate and convenient for industrial production.
Description
Technical field
The invention belongs to electronic component processing technique field, particularly relate to a kind of quartz wafer processing technique.
Background technology
At present, electronic devices and components are all included crystal and propose the requirement of more miniaturization by mobile communication, IT information, electronic product etc., and the dimensional requirement of quartz crystal also tends to miniaturization.Quartz wafer as quartz crystal core component also makes every effort to minimize, the requirement vertical to adapt to subsequent handling compact package group.Energy well theory according to quartz wafer piezoelectric property, when wafer size infinity, performance is best, and impedance is only small.But owing to the size of quartz wafer is limit, it is impossible to accomplishing infinity, and wafer size is more little, impedance is more big.Present electronic product is more and more less, and wafer also will be less, and when wafer size reduces, edge effect is more obvious, causes that Chip-R increases.Thinned wafer edge can reduce the impact of edge effect, thus reducing wafer impedance.
In prior art, the method at thinning quartz wafer edge is to place a wafer in the metal roller that curvature is certain, and abrasive sand in addition, rotate with certain speed, when relying on metal cylinder to rotate, the centrifugal force of quartz wafer makes its cylinder wall of fitting rotate, friction quartz wafer, similar to cylinder curvature to reach wafer profile curvature, thus reducing the resistance of wafer, reduce wafer impedance.But, prior art there is problems in that, quartz wafer quality is very little, and drum rotation speed can not infinitely great (frictional force because being produced by centrifugal force be necessarily less than the gravity of wafer, relative displacement could be there is between such wafer and cylinder wall, and then play the effect at thinned wafer edge), therefore the frictional force produced is just very little, and the wafer process-cycle is very long, generally wants 200 hours.Process-cycle is long, may result in the phase mutual friction between wafer to be processed and strengthens, the electric property causing wafer is declined.Consuming more additionally, the longer process-cycle also leads to abrasive sand, change sand number of times more, and the course of processing requires constant temperature and humidity, unit cost is significantly high.
The high material consumption, the homogeneity of product that exist in quartz crystal cylinder processing technique in prior art are general, process-cycle length, change that sand number of times is more, unit cost is high, are technical problems urgently to be resolved hurrily in this area.
Summary of the invention
The present invention provides a kind of quartz wafer processing technique, it is intended to overcome the problems such as the process-cycle length of existence in quartz wafer cylinder machining process, material consumption length, unit cost are high.
The present invention is achieved in that a kind of quartz wafer processing technique, comprises the following steps:
Overlay film: the zone line of quartz wafer is covered and protects material；
Processing: be placed in cylinder by described quartz wafer, abrasive sand, steel ball and water, starts cylinder and rotates, processing；And
Demoulding: remove the protection material on quartz wafer.
Further, described zone line is the non-machining area of described quartz wafer, described zone line is the non-machining area of described quartz wafer, described zone line edge is corresponding to described quartz wafer close on that outer peripheral distance is described quartz wafer length 1/5～1/10.
Further, the mode of described overlay film includes silk-screen, spraying or directly pastes preshaped protecting film.
Further, described protection material includes at least one of polyurethanes, hexenoic acid esters, esters of acrylic acid, poly terephthalic acid class, epoxy resin apoplexy due to endogenous wind.
Further, the specification of described quartz wafer is: thickness 0.04～0.20mm, long 0.8～3.6mm, wide 0.6～2.0mm.
Further, described quartz wafer quantity: abrasive sand: steel ball: water is: 3000～10000pcs:10～50g:100～500g:200～500ml.
Further, the rotating speed of described cylinder is 120～240rpm, and process time is 3～20h；The diameter of described cylinder is 50～120mm.
Further, the material of described abrasive sand is SiC or Ai2O3。
Further, described demoulding mode include heat remove, light irradiate or use chemistry remover remove.
Further, described chemistry remover includes alcohols, ketone or organic acid abluent.
Further, described heat removes process and is: quartz wafer is heated to 240～400 DEG C.
Present invention also offers a kind of roller system for processing quartz wafer, including cylinder, abrasive sand, steel ball and water.
The present invention compared with prior art, has the beneficial effects that: when cylinder rotates, and the quality of steel ball produces bigger centrifugal force, increases the frictional force of quartz wafer and inner wall of rotary drum；The damping action of water can reduce damage when steel ball falls to wafer.It is coated with at quartz wafer zone line and is covered with protection material, it is possible to this non-machining area on protection wafer is affected.The present invention not only shortens the quartz wafer process-cycle, reduces production cost, and does not affect the performance of quartz wafer.Additionally, the processing technique of the present invention is simple to operate, it is simple to industrialized production.The stable performance of the quartz wafer after being processed by this processing technique, and homogeneity of product is high.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the quartz wafer cylinder processing technique that the embodiment of the present invention 1 provides.
Fig. 2 a is distribution of impedance figure, Fig. 2 b of the 322525MHz of the quartz wafer of prior art intermediate roll processes is the distribution of impedance figure of the 322525MHz of the quartz wafer of the processing in the embodiment of the present invention 1.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the present invention, is not intended to limit the present invention.
Processing quartz wafer according to technical scheme, process is as follows:
Overlay film: the zone line of quartz wafer is adopted silk-screen or directly pastes the mode of preshaped protecting film and cover and protect material, wherein zone line edge corresponding to quartz wafer close on that outer peripheral distance is quartz wafer length 1/5～1/10；Protect at least one of material selection polyurethanes, hexenoic acid lipid, acrylics, poly terephthalic acid class, rubber-like, epoxy resin apoplexy due to endogenous wind；The specification of quartz wafer is: thickness 0.04～0.20mm, long 0.8～3.6mm, wide 0.6～2.0mm；
Processing: be placed in cylinder by quartz wafer, abrasive sand, steel ball and water, starts cylinder and rotates, complete processing；Wherein, wafer: abrasive sand: steel ball: water is: 3000～10000pcs:10～50g:100～500g:200～500ml；The rotating speed of cylinder is 120～240rpm, and the diameter of cylinder is 50～120mm；
Demoulding: adopt heat to remove or use the protection material that the mode of chemistry remover is removed on quartz wafer；Chemistry remover includes alcohols, ketone or organic acid abluent；Heat removes process: quartz wafer is heated to 240～400 DEG C.
As shown in fig. 1, for the schematic diagram of quartz wafer cylinder processing technique, wherein 1 is steel ball, and 2 is quartz wafer, and 3 is water, and 4 is cylinder.This technique is that wafer 2, abrasive sand (not shown), steel ball 1, water 3 are put into cylinder 4, when roller machine works, circular drum 4 high-speed rotation in roller machine, wafer 2, steel ball 1 and abrasive sand can rub with the inwall of cylinder under the influence of centrifugal force；The quality of steel ball 1 can produce bigger centrifugal force simultaneously, increases the frictional force of wafer 2 and cylinder 4 inwall.By quartz wafer 2 is rubbed so that it is the design curvature of profile curvature cylinder is identical.In the course of processing, the non-edge (zone line) of quartz wafer 2 can be carried out certain friction again by steel ball 1 and abrasive sand, causes that the electric property of wafer 2 declines.The zone line of quartz wafer 2 is coated with and is covered with protection material, it is possible to avoid this impact.Meanwhile, the quality being coated with the quartz wafer being covered with protection material increases further, it is possible to increases the frictional force of wafer and inner wall of rotary drum further, shortens the process-cycle further.
Steel ball is heavier, can cause wafer breakage when rotating to high-order whereabouts, collapse the phenomenon such as limit, unfilled corner, cause that Partial wafer is scrapped.Adding water in cylinder is the damping action utilizing water, reduces the damage to wafer when steel ball falls；The existence of protection material, more can weaken this damage effect further.Simultaneously because abrasive sand is water miscible, the existence of water makes abrasive sand be able to uniform and wafer steel ball Homogeneous phase mixing, improves concordance and the lot stability of converted products.
Described protection material includes at least one of polyurethanes, hexenoic acid lipid, acrylics, poly terephthalic acid class, rubber-like, epoxy resin apoplexy due to endogenous wind; these protection materials are organic-based material; dissolve in chemistry remover; such as alcohols, ketone or organic acid abluent, can be specifically K191 reagent or acetone reagent；Use these abluents can be removed totally；Additionally, the thermostability of these protection materials is all below 300 DEG C, and quartz wafer less than 520 DEG C time can work long hours, therefore when quartz wafer can be removed and do not produce to affect on the performance of quartz wafer by protection material when being heated to 300～400 DEG C.
Embodiment 1
Processing quartz wafer according to the cylinder processing technique of the present invention, step is as follows:
Overlay film: adopt silk-screen mode to cover the zone line of quartz wafer and protect material, wherein zone line edge corresponding to quartz wafer close on that outer peripheral distance is quartz wafer length 1/10；Protection material selection epoxy resin；The specification of quartz wafer is: thickness 0.07mm, long 2.0mm, wide 1.34mm；
Processing: be placed in cylinder by quartz wafer, abrasive sand, steel ball and water, starts cylinder and rotates, complete processing；Wherein, wafer: abrasive sand: steel ball: water is: 5000pcs:30g:100g:500ml；The rotating speed of cylinder is 150rpm, and the diameter of cylinder is 60mm；
Demoulding: adopt and use chemistry remover hydroxyacetic acid to remove the epoxy resin on quartz wafer.
By the processing technique of the present invention and the contrast of existing cylinder processing technique, result is as shown in table 1.From table 1 it follows that the present invention is low to environmental requirement, material consumption is few, and the process-cycle is short, need not change sand in the course of processing；In summary, unit cost reduces a lot, it is possible to promote working (machining) efficiency 5～10 times.
Additionally, the product of the quartz wafer processed by the processing technique of the present invention is always good, specifically in conjunction with shown in Fig. 2.Fig. 2 a is distribution of impedance figure, Fig. 2 b of the 322525MHz of the quartz wafer of prior art intermediate roll processes is the distribution of impedance figure of the 322525MHz of the quartz wafer of the processing in the embodiment of the present invention 1, and from figure, we improve the concordance of product.
Table 1
| Project | Conventional tumble | Improve cylinder | Wet method cylinder |
| Environmental requirement | Constant temperature and humidity | Constant temperature and humidity | Room temperature (requires without humiture) |
| Equipment | Roller machine | Roller machine | Roller machine |
| Consumptive material | Abrasive sand | Abrasive sand, steel ball | Abrasive sand, steel ball, water |
| Material consumption | Many | More | Seldom |
| Homogeneity of product | Generally | Poor | Good |
| Process-cycle (hour) | 200 | 120 | <20 |
| Change sand number of times | 20 | 12 | 0 |
| Unit cost | High | Higher | Very low |
Embodiment 2
Processing quartz wafer according to the cylinder processing technique of the present invention, step is as follows:
Overlay film: the zone line of quartz wafer is directly pasted the mode of preshaped protecting film and covers and protect material, wherein zone line edge corresponding to quartz wafer close on that outer peripheral distance is quartz wafer length 1/5；Protection material selection polyurethane；The specification of quartz wafer is: thickness 0.07mm, long 3.6mm, wide 1.8mm；
Processing: be placed in cylinder by quartz wafer, abrasive sand, steel ball and water, starts cylinder and rotates, complete processing；Wherein, wafer: abrasive sand: steel ball: water is: 10000pcs:40g:500g:500ml；The rotating speed of cylinder is 200rpm, and the diameter of cylinder is 120mm；
Demoulding: quartz wafer is heated to 240～400 DEG C, removes the protection material on quartz wafer.
Quartz wafer after processing and the quartz wafer of prior art processing carry out result statistics in the same manner as in Example 1 and test, and result is essentially identical with the result in embodiment 1.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendment, equivalent replacement and improvement etc. made within the spirit and principles in the present invention, should be included within protection scope of the present invention.
Claims (10)
1. a quartz wafer processing technique, it is characterised in that comprise the following steps:
Overlay film: the zone line of quartz wafer is covered and protects material；
Processing: be placed in cylinder by described quartz wafer, abrasive sand, steel ball and water, starts cylinder and rotates, processing；And
Demoulding: remove the protection material on quartz wafer.
2. processing technique as claimed in claim 1, it is characterised in that described zone line is the non-machining area of described quartz wafer, described zone line edge is corresponding to described quartz wafer close on that outer peripheral distance is described quartz wafer length 1/5～1/10.
3. processing technique as claimed in claim 1, it is characterised in that the mode of described overlay film includes silk-screen, spraying or directly pastes preshaped protecting film.
4. processing technique as claimed in claim 1, it is characterised in that described protection material includes at least one of polyurethanes, hexenoic acid esters, esters of acrylic acid, poly terephthalic acid class, epoxy resin apoplexy due to endogenous wind.
5. processing technique as claimed in claim 1, it is characterised in that the specification of described quartz wafer is: thickness 0.04～0.20mm, long 0.8～3.6mm, wide 0.6～2.0mm.
6. processing technique as claimed in claim 1, it is characterised in that described quartz wafer quantity: abrasive sand: steel ball: water is: 3000～10000pcs:10～50g:100～500g:200～500ml.
7. processing technique as claimed in claim 1, it is characterised in that the rotating speed of described cylinder is 120～240rpm, and process time is 3～20h；The diameter of described cylinder is 50～120mm.
8. processing technique as claimed in claim 1, it is characterised in that described demoulding mode includes heat and removes light irradiation or use chemistry remover to remove.
9. processing technique as claimed in claim 8, it is characterised in that described chemistry remover includes alcohols, ketone or organic acid abluent.
10. the roller system being used for processing quartz wafer, it is characterised in that include cylinder, abrasive sand, steel ball and water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610133039.XA CN105751054B (en) | 2016-03-09 | 2016-03-09 | A kind of quartz wafer processing technology |
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| CN201610133039.XA CN105751054B (en) | 2016-03-09 | 2016-03-09 | A kind of quartz wafer processing technology |
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| CN105751054A true CN105751054A (en) | 2016-07-13 |
| CN105751054B CN105751054B (en) | 2018-11-27 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107398782A (en) * | 2017-09-06 | 2017-11-28 | 云南围棋厂 | A kind of stone engraving process |
| CN108177080A (en) * | 2017-12-28 | 2018-06-19 | 应达利电子股份有限公司 | A kind of bevelling method of chip |
| CN110561200A (en) * | 2019-08-02 | 2019-12-13 | 菲特晶(南京)电子有限公司 | quartz wafer processing technology |
| CN113478331A (en) * | 2021-05-10 | 2021-10-08 | 中山市海晶电子有限公司 | Quartz wafer trimming barrel diameter capable of reducing resonator resistance and trimming method thereof |
| CN114029812A (en) * | 2021-11-19 | 2022-02-11 | 杭州中欣晶圆半导体股份有限公司 | Structure for removing silicon wafer edge oxidation film and operation method |
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| CN102335855A (en) * | 2011-06-02 | 2012-02-01 | 湖北东光电子股份有限公司 | Beveling process for 49U/S quartz wafer |
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| CN201493744U (en) * | 2009-09-11 | 2010-06-02 | 镇江市港南电子有限公司 | Straight drum roller |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107398782A (en) * | 2017-09-06 | 2017-11-28 | 云南围棋厂 | A kind of stone engraving process |
| CN108177080A (en) * | 2017-12-28 | 2018-06-19 | 应达利电子股份有限公司 | A kind of bevelling method of chip |
| CN110561200A (en) * | 2019-08-02 | 2019-12-13 | 菲特晶(南京)电子有限公司 | quartz wafer processing technology |
| CN113478331A (en) * | 2021-05-10 | 2021-10-08 | 中山市海晶电子有限公司 | Quartz wafer trimming barrel diameter capable of reducing resonator resistance and trimming method thereof |
| CN114029812A (en) * | 2021-11-19 | 2022-02-11 | 杭州中欣晶圆半导体股份有限公司 | Structure for removing silicon wafer edge oxidation film and operation method |
| CN114029812B (en) * | 2021-11-19 | 2022-11-01 | 杭州中欣晶圆半导体股份有限公司 | Structure for removing silicon wafer edge oxidation film and operation method |
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Effective date of registration: 20200928 Address after: 518000 south side of innovation Avenue and east side of Bianxi River, EBU Town, Shenzhen Special Cooperation Zone, Shenzhen City, Guangdong Province Patentee after: Shenzhen Shenshan special cooperation zone Yingdali Electronic Technology Co.,Ltd. Address before: 518103, building 3-4, building C, 4 / F, Tai Po Industrial Park, Fenghuang second industrial zone, Fenghuang Industrial Zone, Baoan District, Shenzhen, Guangdong, Fuyong, China Patentee before: INTERQUIP ELECTRONICS (SHENZHEN) Co.,Ltd. |